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4 Jul 1988

Volume 53, Issue 1, pp. 1-80

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High‐power operation in InGaAs separate confinement heterostructure quantum well laser diodes

M. Kitamura, S. Takano, T. Sasaki, H. Yamada, and I. Mito

Appl. Phys. Lett. 53, 1 (1988); http://dx.doi.org/10.1063/1.100120 (3 pages) | Cited 9 times

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Lasing characteristics have been investigated systematically in long‐wavelength InGaAs separate confinement heterostructure quantum well laser diodes (SCH QW LD’s) with varied well thicknesses and number of wells, for the first time. Marked improvements in threshold current density and characteristic temperature values have been observed in SCH MQW LD’s to SCH SQW LD’s. Maximum cw output power of 46 mW at 20 °C has been achieved in SCH QW LD’s with five wells, which is the highest among the long‐wavelength quantum well LD’s.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Waveguide magneto‐optic isolator fabricated by laser annealing

Koji Ando, Tokio Okoshi, and Naoki Koshizuka

Appl. Phys. Lett. 53, 4 (1988); http://dx.doi.org/10.1063/1.100565 (3 pages) | Cited 47 times

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A compact waveguide optical isolator whose input and output light are TE or TM mode has been realized by making adjacent nonreciprocal and reciprocal TE‐TM mode converters in a (BiGdLu)3(FeGa)5O12 film. Designed configurations of the magnetization directions were produced by making use of local laser annealing of the film grown on a Gd3Ga5O12 substrate of which the face normal is tilted from the [111] axis. The laser‐annealed and nonannealed regions worked as the nonreciprocal and reciprocal mode converters, respectively. The observed isolation agreed with theoretical calculation. An isolation ratio of 12.5 dB was achieved at a wavelength λ=1.15 μm.
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42.79.Gn Optical waveguides and couplers
78.20.Ls Magneto-optical effects

Accuracy of electro‐optic measurements of coplanar waveguide transmission lines

J. L. Freeman, D. M. Bloom, S. R. Jefferies, and B. A. Auld

Appl. Phys. Lett. 53, 7 (1988); http://dx.doi.org/10.1063/1.100129 (3 pages) | Cited 8 times

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Nonzero backside potentials in microwave and digital GaAs circuits lead to small errors in direct electro‐optic sampling measurements. We present experimental studies of the magnitude of this error signal as a function of center conductor width for 50 Ω coplanar waveguide transmission lines on a 20 mil substrate. Backside voltages 20 dB below the applied frontside signal are found for typical microwave circuit transmission lines. Calculation of this backside signal with finite difference techniques shows excellent agreement with experiment. Analytic estimates of the backside potential also may be derived in terms of the spatially periodic eigenfunctions for Laplace’s equation in the substrate.
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84.40.Dc Microwave circuits
84.30.Sk Pulse and digital circuits
84.40.Az Waveguides, transmission lines, striplines

Scanning differential optical profilometer for simultaneous measurement of amplitude and phase variation

C. W. See, R. K. Appel, and M. G. Somekh

Appl. Phys. Lett. 53, 10 (1988); http://dx.doi.org/10.1063/1.100118 (3 pages) | Cited 17 times

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A scanning optical profilometer is described which can simultaneously and independently measure the differential phase/amplitude variation of light reflected off an object surface. This information may then be interpreted as topographical and reflectivity variation of the object surface. The system is based on a heterodyne interferometer and uses two beams to probe the surface. The theoretical sensitivity of the system is 3×10−3 mrad in phase and 3 in 105 in reflectivity variation, both measured in a 1 kHz bandwidth. Preliminary measurements of film thickness and reflectivity variation are presented. This system also has potential applications for imaging objects with minute structural variations.
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07.60.Ly Interferometers
68.35.Dv Composition, segregation; defects and impurities
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Polarization‐independent electro‐optically tunable narrow‐band wavelength filter

W. Warzanskyj, F. Heismann, and R. C. Alferness

Appl. Phys. Lett. 53, 13 (1988); http://dx.doi.org/10.1063/1.100566 (3 pages) | Cited 41 times

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We propose and demonstrate the first polarization‐independent electro‐optically tunable wavelengh filter with single‐mode waveguides. The Ti:LiNbO3 filter utilizes narrow‐band electro‐optic TE ↔ TM conversion and employs TE/TM polarization splitters in the input and output waveguides. The filter operates at 1.52 μm with a bandwidth of only 12 Å and can be electro‐optically tuned over at least 110 Å at a tuning rate of 0.55 Å/V.
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42.79.Ci Filters, zone plates, and polarizers
42.82.-m Integrated optics
78.20.Jq Electro-optical effects
42.79.Gn Optical waveguides and couplers

Ultrasonic imaging with a fixed instrument configuration

Alan Witten, Joe Tuggle, and Robert C. Waag

Appl. Phys. Lett. 53, 16 (1988); http://dx.doi.org/10.1063/1.100119 (3 pages) | Cited 6 times

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Diffraction tomography is a technique based on an inversion of the wave equation which has been proposed for high‐resolution ultrasonic imaging. While this approach has been considered for diagnostic medical applications, it has, until recently, been limited by practical limitations on the speed of data acquisition associated with instrument motions. This letter presents the results of an experimental study directed towards demonstrating tomography utilizing a fixed instrument configuration.
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43.35.Wa Biological effects of ultrasound, ultrasonic tomography
43.35.Yb Ultrasonic instrumentation and measurement techniques
87.63.D- Ultrasonography
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants

Self‐biasing effects on plasma etching characteristics of Si and SiO2

M. J. Cooke and J. Pelletier

Appl. Phys. Lett. 53, 19 (1988); http://dx.doi.org/10.1063/1.100567 (3 pages) | Cited 6 times

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The effects of ion energy on the etching characteristics of Si and SiO2 are studied in a SF6 multipolar microwave plasma in the 0–400 eV range. For constant plasma conditions, the ion energy is varied by using independent rf wafer biasing. The variations observed in the anisotropy and etch rates of Si and SiO2 are discussed in the light of previous experimental results and in terms of the current models for plasma etching.
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81.65.-b Surface treatments
81.05.Kf Glasses (including metallic glasses)
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
52.40.Hf Plasma-material interactions; boundary layer effects

Grain growth of 〈100〉 textured Ge on a SiO2/Si3N4 stripe

Atsushi Ogura, Naoaki Aizaki, and Hiroshi Terao

Appl. Phys. Lett. 53, 22 (1988); http://dx.doi.org/10.1063/1.100570 (3 pages) | Cited 2 times

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Grain growth enhancement in 〈100〉 textured Ge on a SiO2/Si3N4 stripe was investigated. Transmission electron microscope observation revealed 7‐μm‐diam (100) grains on a 1 μm periodic stripe after 20 h of 900 °C annealing. It is thought that the SiO2/Si3N4 stripe enhanced a grain growth similar to the grooved SiO2 case. However, since the stripe had no surface step, no grain growth interruptions were found at stripe boundaries.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Dv Composition, segregation; defects and impurities

Depth profile of vacancy‐type defects in B+‐implanted Si with a SiO2 overlayer by a variable‐energy positron beam

A. Uedono, S. Tanigawa, J. Sugiura, and M. Ogasawara

Appl. Phys. Lett. 53, 25 (1988); http://dx.doi.org/10.1063/1.100569 (3 pages) | Cited 20 times

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A variable‐energy positron beam technique has been used to probe the vacancy‐type defects in Si with a 43‐nm‐thick SiO2 layer induced by B+ implantation with the energy of 80 keV. From the measurements of line shape parameters as a function of incident positron energy, it was found that defects in the Si substrate are distributed in a parabolic form with the average depth shallower by 27% than the projected range of B+ ions for the specimen with a dose of 5×1012 B/cm2 and that defects are accumulated in large quantities at the SiO2 /Si interface for the specimen with higher doses.
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61.72.jd Vacancies
61.72.jj Interstitials
61.72.uf Ge and Si
68.35.Dv Composition, segregation; defects and impurities
78.70.Bj Positron annihilation

Detection of local atomic ordering in high‐resolution electron images of quasiamorphous materials

R. S. Timsit, C. Gallerneault, J. C. Barry, and D. Landheer

Appl. Phys. Lett. 53, 28 (1988); http://dx.doi.org/10.1063/1.100112 (3 pages) | Cited 5 times

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This letter describes an image analysis technique capable of enhancing atomic ordering in high‐resolution electron micrographs of quasiamorphous materials. The technique cross correlates the full micrograph with a template selected from the micrograph image field and examines the cross‐correlation function (CCF) as a function of template dimension. A critical dimension is found for which the CCF yields evidence of local atomic ordering.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
61.43.Fs Glasses
61.43.-j Disordered solids
68.55.-a Thin film structure and morphology
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Analysis of thermal stress‐induced grain boundary cavitation and notching in narrow Al‐Si metallizations

Che‐Yu Li, Ronald D. Black, and William R. LaFontaine

Appl. Phys. Lett. 53, 31 (1988); http://dx.doi.org/10.1063/1.100113 (3 pages) | Cited 41 times

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Grain boundary voiding and notching have been found to produce failures in narrow metallizations during thermal aging. The nucleation and growth of grain boundary voids are considered to occur as a result of grain boundary sliding and the subsequent stress‐induced mass transport. A proposed model yields the linewidth and temperature dependence of the observed failure rate.
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68.35.Gy Mechanical properties; surface strains
66.30.Lw Diffusion of other defects
66.30.Qa Electromigration
81.40.Lm Deformation, plasticity, and creep

Effect of oxygen precipitation on phosphorus diffusion in Czochralski silicon

S. T. Ahn, H. W. Kennel, J. D. Plummer, W. A. Tiller, Z. U. Rek, and S. R. Stock

Appl. Phys. Lett. 53, 34 (1988); http://dx.doi.org/10.1063/1.100114 (3 pages) | Cited 3 times

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The effects of oxygen precipitation and surface films (SiO2 vs Si3N4) on P diffusion at 1100 °C in Czochralski silicon have been studied. With a fast precipitation rate, P diffusion under both kinds of films is enhanced because of the supersaturation of Si interstitials caused by oxygen precipitation. The larger enhancement in P diffusion under Si3N4 than that under SiO2 covered with Si3N4 is attributed to the slower recombination velocity of interstitials at the Si3N4/Si interface. P diffusion in a denuded zone behaves like that in float‐zone Si until the interstitials generated under that zone arrive at the interface.
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66.30.J- Diffusion of impurities
61.72.jd Vacancies
61.72.jj Interstitials
61.72.Bb Theories and models of crystal defects
81.30.Mh Solid-phase precipitation

Work hardening and strain relaxation in strained‐layer buffers

Brian W. Dodson

Appl. Phys. Lett. 53, 37 (1988); http://dx.doi.org/10.1063/1.100115 (2 pages) | Cited 29 times

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Fully relaxed buffer layers are of considerable importance for growth of high quality crystals on substrates having different lattice parameters. Recent experiments by Biefeld et al. [R. M. Biefeld, C. R. Hills, and S. R. Lee, J. Cryst. Growth (in press)] in the InAsSb system show that the degree of relaxation is considerably less than expected using conventional equilibrium models, but is more complete in continuously graded than in step‐graded buffer layers. In the present letter, this observation is explained in terms of Taylor‐type (dislocation interaction) work hardening.
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81.40.Cd Solid solution hardening, precipitation hardening, and dispersion hardening; aging
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
62.20.Hg Creep
81.40.Lm Deformation, plasticity, and creep

Diffusion coefficient of a pair of nitrogen atoms in float‐zone silicon

Taizoh Itoh and Takao Abe

Appl. Phys. Lett. 53, 39 (1988); http://dx.doi.org/10.1063/1.100116 (3 pages) | Cited 54 times

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Outdiffusion profiles of nitrogen in silicon were measured by secondary ion mass spectrometry to determine its diffusion coefficient in a temperature range of 800–1200 °C. The total amount of the nitrogen outdiffusion agrees with the change in infrared absorption by heat treatment. The experimental results give the diffusion coefficient of nitrogen as D=2.7×103 exp(−2.8eV/kT)cm2/s. This value is five orders of magnitude larger compared with the reported expression of 0.87 exp(−3.29eV/kT)cm2/s. Nitrogen–nitrogen‐pair‐like molecule in crystals corresponds to the former value and substitutional nitrogen atom to the latter one. These two types of nitrogen in silicon may allow us to clarify the various effects of nitrogen such as strengthening of crystals and suppression of swirls and D‐defect generation.
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66.30.J- Diffusion of impurities
61.72.Bb Theories and models of crystal defects
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Observations on intensity oscillations in reflection high‐energy electron diffraction during gas source molecular beam epitaxy of InP

Yoshitaka Morishita, Sigemitsu Maruno, Mitsunobu Gotoda, Yoshinori Nomura, and Hitoshi Ogata

Appl. Phys. Lett. 53, 42 (1988); http://dx.doi.org/10.1063/1.100117 (3 pages) | Cited 7 times

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We report the first observation of reflection high‐energy electron diffraction intensity oscillations during the growth of InP using trimethylindium and phosphine in gas source molecular beam epitaxy (GSMBE). By optimizing the growth conditions, intensity oscillations more than 700 periods have been observed. The temperature and flux dependence of the oscillating behavior have been studied. Results indicate that the growth of InP by GSMBE is predominantly via a two‐dimensional layer‐by‐layer mode.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

In situ substrate‐surface cleaning for very low temperature silicon epitaxy by low‐kinetic‐energy particle bombardment

T. Ohmi, T. Ichikawa, T. Shibata, K. Matsudo, and H. Iwabuchi

Appl. Phys. Lett. 53, 45 (1988); http://dx.doi.org/10.1063/1.100121 (3 pages) | Cited 29 times

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A very low temperature in situ substrate‐surface cleaning process utilizing low‐kinetic‐energy particle bombardment has been developed. Dramatic improvements have been achieved in the crystallinity of epitaxial silicon films grown by the newly developed low‐kinetic‐energy particle process, in which argon ions having precisely controlled energies are continuously bombarding the film surface during the entire growth operation. With the optimized substrate‐surface cleaning conditions, in which the contaminants on the surface of silicon substrates are removed without introducing any damages to the substrates, the epitaxial silicon layer with a perfect crystallinity has been obtained at such very low temperatures below 350 °C.
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81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.55.-a Thin film structure and morphology
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Boron surface segregation in silicon molecular beam epitaxy

E. de Frésart, K. L. Wang, and S. S. Rhee

Appl. Phys. Lett. 53, 48 (1988); http://dx.doi.org/10.1063/1.100122 (3 pages) | Cited 28 times

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Boron surface segregation in Si molecular beam epitaxy has been measured on Si(111) substrate as a function of the growth temperature (400 °C≤Ts≤900 °C) by Auger electron spectroscopy. Boron oxide (B2O3) was used as dopant material to achieve a boron concentration level of about 1×1019 cm−3. Three temperature regions are observed for the behavior of the ratio rd=Is/Ib of the surface (Is) to the bulk (Ib) dopant atomic fractions. At low temperature, Ts=400–570 °C the ratio maintains at the value rd≂1.5. For 570 °C≤Ts≤720 °C, rd increases to a plateau rd≂5.5, and then jumps to rd=42 in the 720–750 °C region. At higher temperature, Ts≥750 °C, rd decreases according to a relation which can be approximated by the classical equilibrium segregation theory. In that region, the boron Gibbs free energy of surface segregation is calculated from data to be ΔGS=−0.33±0.02 eV. Evolution of rd is closely correlated to the etch pit count and electron channeling results revealing amorphous, polycrystalline, and epitaxial growth, when going from low to high growth temperature.
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68.35.Fx Diffusion; interface formation
68.35.Dv Composition, segregation; defects and impurities
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Heteroepitaxy of InSb on silicon by metalorganic magnetron sputtering

T. Sudersena Rao, J. B. Webb, D. C. Houghton, J. M. Baribeau, W. T. Moore, and J. P. Noad

Appl. Phys. Lett. 53, 51 (1988); http://dx.doi.org/10.1063/1.100123 (3 pages) | Cited 17 times

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Heteroepitaxial films of InSb have been deposited by metalorganic magnetron sputtering (MOMS) on 〈100〉 silicon substrates using molecular beam epitaxy (MBE) GaAs buffer layers. X‐ray diffraction and cross‐sectional transmission electron microscopy measurements indicate the epilayers to be structurally similar to layers deposited by MOMS and MBE on high quality GaAs substrates, despite the increased defect density of the GaAs buffer layer. Some of the defects within the buffer layer propagate into the InSb epilayer; however, the majority of defects arise from the lattice mismatch at the interfacial region.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.Cd Deposition by sputtering
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Dv Composition, segregation; defects and impurities

Magnetophonon effect in GaAs Schottky gate field‐effect transistors

T. P. C. Judd, M. Pepper, and G. Hill

Appl. Phys. Lett. 53, 54 (1988); http://dx.doi.org/10.1063/1.100124 (3 pages)

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We have investigated the magnetophonon resonance in lightly doped GaAs Schottky gate field‐effect transistors of different shape. It is shown that the phase and amplitude of the observed oscillations are dependent upon geometrical considerations. A model is presented in good agreement with experiment.
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85.30.Tv Field effect devices
73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Ns Metal-nonmetal contacts

Ionic species responsible for the plasma anodization of silicon

K. J. Barlow, A. Kiermasz, W. Eccleston, and J. L. Moruzzi

Appl. Phys. Lett. 53, 57 (1988); http://dx.doi.org/10.1063/1.100571 (3 pages) | Cited 10 times

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Identification of the species that promotes the growth of silicon dioxide on silicon in a microwave oxygen plasma has been investigated. Comparison of ion analysis experiments using quadropole mass spectrometry and oxide growth experiments performed in the same system indicates a strong correlation between the oxide growth and the presence of O− ions in the plasma.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.65.-b Surface treatments
81.15.Rs Spray coating techniques

III‐V/II‐VI double‐barrier resonant tunneling structures

E. T. Yu and T. C. McGill

Appl. Phys. Lett. 53, 60 (1988); http://dx.doi.org/10.1063/1.100125 (3 pages) | Cited 16 times

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GaAs‐ZnSe and InAs‐ZnTe double‐barrier resonant tunneling devices are proposed and analyzed theoretically. These structures would provide a novel way to study mixed III‐V/II‐VI materials systems and growth techniques, and may also yield devices that are faster and have greater peak‐to‐valley current ratios than GaAs‐AlGaAs tunnel structures. In the GaAs‐ZnSe system, the increase in speed is due to the smaller dielectric constant in ZnSe, compared to that in AlGaAs. In the InAs‐ZnTe system, the increase in speed is due to the small dielectric constant in ZnTe and the high mobility in InAs, and the larger peak‐to‐valley ratio is due to the large conduction‐band offset that is expected. We calculate current‐voltage curves for these devices and show that their negative differential resistance current‐voltage characteristics should be comparable or superior to those of GaAs‐AlGaAs devices. The effects of band bending and the general method used to calculate current as a function of voltage are briefly discussed.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Structure of silicon carbide precipitates in oxygen‐implanted and annealed silicon‐on‐insulator material

S. J. Krause, C. O. Jung, and S. R. Wilson

Appl. Phys. Lett. 53, 63 (1988); http://dx.doi.org/10.1063/1.100568 (3 pages) | Cited 6 times

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The structure of silicon carbide precipitates in oxygen‐implanted and annealed silicon‐on‐insulator material was directly studied by high‐resolution transmission electron microscopy. Epitaxially aligned precipitates 5–25 nm in size were located in the matrix silicon above and below the buried oxide layer with a density of 1×1010 cm−3. Precipitate‐matrix interface strain was minimized by twinning and stacking fault formation in the precipitate and by amorphous silicon dioxide at the interface. The wide range of depths of the precipitates suggests that they are formed from trace amounts of carbon that are accelerated along with oxygen after mass analysis.
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61.72.Bb Theories and models of crystal defects
61.72.uf Ge and Si
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
68.35.Dv Composition, segregation; defects and impurities

Schottky barrier formation on (NH4)2S‐treated n‐ and p‐type (100)GaAs

M. S. Carpenter, M. R. Melloch, and T. E. Dungan

Appl. Phys. Lett. 53, 66 (1988); http://dx.doi.org/10.1063/1.100572 (3 pages) | Cited 84 times

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Because of a large surface state density, which effectively pins the Fermi level at the surface, metals with vastly different work functions and chemistry produce very similar Schottky barriers when deposited on GaAs. We have investigated the effects of an (NH4)2S surface treatment on the formation of Schottky barriers on n‐ and p‐type GaAs. Samples which have undergone the (NH4)2S treatment show a reduced pinning of the Fermi level at the surface and hence Schottky barriers which are more sensitive to the metal work function.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
85.30.Hi Surface barrier, boundary, and point contact devices
81.40.Rs Electrical and magnetic properties related to treatment conditions

Outdiffusion of oxygen and carbon in Czochralski silicon

F. Shimura, T. Higuchi, and R. S. Hockett

Appl. Phys. Lett. 53, 69 (1988); http://dx.doi.org/10.1063/1.100126 (3 pages) | Cited 23 times

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The outdiffusion behavior of oxygen and carbon in heat‐treated Czochralski (CZ) silicon has been investigated by secondary ion mass spectroscopy. The results show that oxygen diffusion is greatly retarded by oxygen precipitation and strongly support a vacancy‐dominant diffusion mechanism for oxygen in silicon. In carbon‐doped CZ silicon, the diffusion of both oxygen and carbon is greatly enhanced at 750 °C, but is significantly retarded at 1000 °C. In conjunction with the infrared absorption data, the enhanced diffusion has been attributed to the formation of fast‐diffusing O‐C complexes, while the retarded diffusion of carbon has been tentatively attributed to the formation of slow‐diffusing complexes, such as Si‐O‐C.
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66.30.J- Diffusion of impurities
61.72.jd Vacancies
61.72.jj Interstitials
81.30.Mh Solid-phase precipitation
61.72.Bb Theories and models of crystal defects

Spectroscopic analysis of electronically excited species in XeCl excimer laser‐induced plasmas from the ablated high‐temperature superconductor YBa2Cu3O7

O. Auciello, S. Athavale, O. E. Hankins, M. Sito, A. F. Schreiner, and N. Biunno

Appl. Phys. Lett. 53, 72 (1988); http://dx.doi.org/10.1063/1.100573 (3 pages) | Cited 49 times

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Optical spectroscopic analyses have been performed to study luminescence from plasmas produced by ablation of YBa2Cu3O7 single‐phase high Tc bulk superconductors exposed to XeCl excimer laser (308 nm) pulses. Only excited atomic neutral and single ionized species (Cu/Cu+, Ba/Ba+, Y/Y+) were observed within the experimental resolution of an optical multichannel analyzer detection system, when irradiating the targets in vacuum (∼10−5–10−4 Torr). Conspicuously absent in the spectra (300–800 nm range) are molecular emission bands that would appear if large excited molecules or fragments were present. Implications of the present results are discussed which relate to an early hypothesis about the laser ablation mechanism and their influence on high Tc film characteristics.
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79.20.Ds Laser-beam impact phenomena
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
74.70.-b Superconducting materials other than cuprates
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
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