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5 Sep 1988

Volume 53, Issue 10, pp. 823-928

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Generation of 0.6 μJ pulses of 16 fs duration through high‐repetition rate amplification of self‐phase modulated pulses

G. Boyer, M. Franco, J. P. Chambaret, A. Migus, A. Antonetti, P. Georges, F. Salin, and A. Brun

Appl. Phys. Lett. 53, 823 (1988); http://dx.doi.org/10.1063/1.100130 (3 pages) | Cited 14 times

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We have generated optical pulses of 16 fs duration in the submicrojoule range and at a repetition rate of 11 kHz. This was obtained by amplifying self‐phase modulated pulses at the output of a fiber, using a couple of dyes to achieve gain covering a large spectrum around 620 nm.
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.81.Dp Propagation, scattering, and losses; solitons
42.55.Mv Dye lasers

Electrocontrolled beam coupling and bistable behavior in SBN:Ce crystals

Jian Ma, Liren Liu, Shudong Wu, Zhijiang Wang, Liangying Xu, and Biyun Shu

Appl. Phys. Lett. 53, 826 (1988); http://dx.doi.org/10.1063/1.100154 (2 pages) | Cited 6 times

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We present the experimental result of electrocontrolled two‐beam coupling in photorefractive SBN:Ce crystals. The coupling direction and coupling gain can be predetermined by an externally applied dc electric field, and the coupling gain shows a bistable behavior. A theoretical explanation is also given.
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78.20.Jq Electro-optical effects
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Exponential gain in a Smith–Purcell amplifier

Levi Schächter and Amiram Ron

Appl. Phys. Lett. 53, 828 (1988); http://dx.doi.org/10.1063/1.100131 (3 pages) | Cited 9 times

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We study here the gain of an amplifier based on the Smith–Purcell effect. The grating is characterized by a reflection matrix and the gain, in the exponential region, is calculated as a function of the beam height and thickness.
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41.60.Cr Free-electron lasers
42.79.Dj Gratings
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Laser photoablation of spin‐on‐glass

Michael Hogan and James G. Lunney

Appl. Phys. Lett. 53, 831 (1988); http://dx.doi.org/10.1063/1.100085 (3 pages) | Cited 2 times

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The photoablation of a phenylsiloxane spin‐on‐glass (SOG) (Allied Accuglass 204) in the precured state has been studied at 193 and 248 nm using an excimer laser. The ablation of a 400 nm layer of SOG on silicon was monitored interferometrically using a He‐Ne laser. At 193 nm, where the absorption coefficient is high, the reflectivity shows the oscillation expected for uniform photoablation at the surface, but the SOG is not completely removed. At 248 nm the SOG film is nearly transparent, and for 0.53 J cm−2 only one shot is required for complete removal. At lower fluences more pulses are required to remove the SOG completely, but the reflectivity does not show the oscillation that would be expected for the uniform removal of material at the surface. The microlithographic capabilities of laser photoablation of SOG were investigated at 248 nm, and lines 2 μm wide with sloping sides 0.2 μm wide were obtained.
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79.20.Ds Laser-beam impact phenomena
81.05.Kf Glasses (including metallic glasses)
81.65.-b Surface treatments

Room‐temperature optically pumped Cd0.25Zn0.75Te/ZnTe quantum well lasers grown on GaAs substrates

A. M. Glass, K. Tai, R. B. Bylsma, R. D. Feldman, D. H. Olson, and R. F. Austin

Appl. Phys. Lett. 53, 834 (1988); http://dx.doi.org/10.1063/1.100086 (3 pages) | Cited 24 times

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Optically pumped lasers emitting near 600 nm at room temperature have been fabricated for the first time in Cd0.25Zn0.75Te/ZnTe superlattices grown on GaAs substrates. The threshold pump intensity using pulsed 0.53 μm radiation increased from ∼7 kW/cm at 10 K to ∼60 kW/cm2 at room temperature with a threshold temperature dependence described by T0∼111 K.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Picosecond nonlinear polarization switching with a fiber filter

S. Trillo, S. Wabnitz, N. Finlayson, W. C. Banyai, C. T. Seaton, G. I. Stegeman, and R. H. Stolen

Appl. Phys. Lett. 53, 837 (1988); http://dx.doi.org/10.1063/1.100087 (3 pages) | Cited 21 times

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We report ultrafast all‐optical switching between two orthogonal linear polarizations in a periodically twisted, birefringent fiber filter.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.81.Gs Birefringence, polarization
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Infrared power limiting and self‐switching in CdTe

William H. Steier, Jayant Kumar, and Mehrdad Ziari

Appl. Phys. Lett. 53, 840 (1988); http://dx.doi.org/10.1063/1.100088 (2 pages) | Cited 11 times

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Power limiting and self‐switching which is caused by the field shielding effects of charge created by photoconductivity at 1.06 μm in CdTe have been demonstrated. The effect has a relatively low threshold of ∼100 μW/cm2, an extrapolated switching time of microseconds, and can be used over the wavelength band of approximately 0.9–1.3 μm.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
72.40.+w Photoconduction and photovoltaic effects

In situ observation on electron‐beam‐induced chemical vapor deposition by transmission electron microscopy

Shinji Matsui and Toshinari Ichihashi

Appl. Phys. Lett. 53, 842 (1988); http://dx.doi.org/10.1063/1.100089 (3 pages) | Cited 33 times

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W deposition, using a WF6 source and electron‐beam‐induced surface reaction, has been studied by transmission electron microscopy (TEM). The initial growth process has been observed in situ by TEM. As a result, it became clear that β‐W clusters are formed by electron beam irradiation of the WF6 adlayer. Moreover, it has been observed that W layers are formed by coalescing the W clusters by electron beam irradiation at 5×10−7 Torr WF6 gas pressure. Furthermore, a nanostructure involving a W rod with 15 nm diameter has been demonstrated by using electron‐beam‐induced surface reaction.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Bx Metals, semimetals, and alloys
68.55.-a Thin film structure and morphology
61.80.Fe Electron and positron radiation effects

Angular dependence of preferential sputtering and composition in aluminum‐copper thin films

P. J. Rudeck, J. M. E. Harper, and P. M. Fryer

Appl. Phys. Lett. 53, 845 (1988); http://dx.doi.org/10.1063/1.100090 (3 pages) | Cited 2 times

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The copper concentration in aluminum‐copper alloys can be altered by ion bombardment during film deposition. We have measured the sputtering yields of aluminum and copper in Al‐Cu alloys as a function of the Cu concentration (5–13 at. %) and the angle of ion incidence (0°–40° from normal). During deposition, the films were partially resputtered by 500 eV Ar+ ion bombardment from a Kaufman ion source. We found that the Cu sputtering yield decreases by up to a factor of 10 in the alloy, relative to elemental Cu. The Al sputtering yield remains close to the elemental value. The net effect is a strong preferential sputtering of Al relative to Cu, which enhances the Cu concentration in an ion‐bombarded film. The Al/Cu sputtering yield ratio for normal incidence ion bombardment ranges from 3 to 5 as a function of Cu concentration. This ratio decreases with increasing angle of incidence to as low as 2 for 40° incident ions. However, since a higher fraction of the film is resputtered from a sloping surface, a higher Cu concentration is found on a sloping surface relative to a flat surface. These results show that the film composition will vary as a function of the surface topography.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.55.Nq Composition and phase identification
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)

Excess stress and the stability of strained heterostructures

J. Y. Tsao and B. W. Dodson

Appl. Phys. Lett. 53, 848 (1988); http://dx.doi.org/10.1063/1.100091 (3 pages) | Cited 78 times

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We derive stability criteria for arbitrary strained heterostructures. The criteria are based on evaluating the excess stress as a continuous function of position within a structure for the two well‐known Matthews–Blakeslee [J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974)] dislocation mechanisms for strain relief by plastic flow. If the excess stress for either mechanism exceeds zero anywhere within the structure, then the structure is unstable or metastable to strain relief by that mechanism.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.60.Bs Mechanical and acoustical properties
81.40.Lm Deformation, plasticity, and creep
68.55.-a Thin film structure and morphology

Anomalous diffusion of boron implanted into silicon along the [100] direction

A. E. Michel, M. Numan, and W. K. Chu

Appl. Phys. Lett. 53, 851 (1988); http://dx.doi.org/10.1063/1.100092 (3 pages) | Cited 2 times

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We have observed transient enhanced diffusion of boron implanted into silicon along the [100] channeling direction and compared it with that of boron implanted in a ‘‘random’’ direction. It is found that the anomalous boron displacement for the channeled implants is significantly greater than for the random counterparts. An empirical explanation for the greater displacement of the channeled implants is proposed that is related to the spatial distribution of the implanted boron and the lattice damage generated by the implantation process.
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66.30.J- Diffusion of impurities
61.72.uf Ge and Si
61.72.Bb Theories and models of crystal defects
61.80.Jh Ion radiation effects

First room‐temperature cw operation of a GaInAsP/InP light‐emitting diode on a silicon substrate

M. Razeghi, R. Blondeau, M. Defour, F. Omnes, P. Maurel, and F. Brillouet

Appl. Phys. Lett. 53, 854 (1988); http://dx.doi.org/10.1063/1.100093 (2 pages) | Cited 12 times

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We report in this letter the first successful fabrication of an InP‐GaInAsP light‐emitting diode, emitting at 1.15 μm grown by low‐pressure metalorganic chemical vapor deposition on a silicon substrate. The device has been operated under continuous wave operation at room temperature for 24 h (with an injection current of 200 mA), and showed no degradation.
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85.60.Jb Light-emitting devices
42.82.-m Integrated optics

Creation of deep levels in horizontal Bridgman‐grown GaAs by hydrogenation

Hoon Young Cho, Eun Kyu Kim, Suk‐Ki Min, Jae Boong Kim, and Jin Jang

Appl. Phys. Lett. 53, 856 (1988); http://dx.doi.org/10.1063/1.100094 (3 pages) | Cited 26 times

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The effect of hydrogen plasma exposure on the deep levels in GaAs grown by the horizontal Bridgman method was studied. After hydrogenation at 250 °C for 3 h, the concentrations of the electron deep levels, such as the EL2 trap (Ec‐0.81 eV), the EL3 trap (Ec−0.63 eV), and the EL6 trap (Ec−0.35 eV), decrease by one order of magnitude. On the other hand, three new electron traps at Ec −0.42 eV, Ec −0.54 eV, and Ec −0.94 eV are created. After rapid thermal annealing up to 550 °C for 10 s, these created traps are reduced and the deep levels decreased by hydrogenation recover nearly completely. This result reveals that the passivation and creation of deep levels by hydrogenation may be explained as the interaction of atomic hydrogen with an unsaturated bond of native defects.
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71.55.Eq III-V semiconductors
81.65.-b Surface treatments
61.72.Bb Theories and models of crystal defects
81.40.Rs Electrical and magnetic properties related to treatment conditions

Coherence length in quantum interference devices having periodic potential

Kotaro Tsubaki and Yasuhiro Tokura

Appl. Phys. Lett. 53, 859 (1988); http://dx.doi.org/10.1063/1.100095 (3 pages) | Cited 12 times

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A measurement of coherence length in the quantum interference device using drain current oscillation is proposed. The coherence length for a quantum interference device, called the washboard transistor, is measured by the proposed method. The merit of this method is that the quantitative value of the coherence length is measured using only quantum interference phenomena.
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85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
73.61.Ey III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Bk General theory, scattering mechanisms

Quality improvement of metalorganic chemical vapor deposition grown GaP on Si by AsH3 preflow

Y. Kohama, K. Uchida, T. Soga, T. Jimbo, and M. Umeno

Appl. Phys. Lett. 53, 862 (1988); http://dx.doi.org/10.1063/1.100096 (3 pages) | Cited 9 times

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GaP epilayers are grown on Si substrates after AsH3 preflow. Electron beam induced current observation and double‐crystal x‐ray diffraction show that the AsH3 preflow drastically improves crystalline quality of GaP epilayers. The full width at half‐maximum of the (400) reflection obtained from 4.8 μm GaP is as small as 115 arcseconds. Secondary ion mass spectroscopy shows that As atoms accumulate at the GaP/Si interfaces, playing an important role in preventing Si outdiffusion into the GaP epilayers.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
68.35.Fx Diffusion; interface formation
68.35.Dv Composition, segregation; defects and impurities

Electron spin resonance and transmission electron microscopy studies of solution‐grown CdTe thin films

G. K. Padam and S. K. Gupta

Appl. Phys. Lett. 53, 865 (1988); http://dx.doi.org/10.1063/1.100097 (3 pages) | Cited 3 times

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The electron spin resonance (ESR) and transmission electron microscopy (TEM) of as‐grown and air heat treated CdTe thin films deposited by the solution growth method are studied. A single isotropic ESR absorption line at g=2.0002 attributed to Cd+ (I=0) is obtained on heating the films in air at and above 300 °C. Line intensity increases from 300 °C and reaches maximum at 500 °C beyond which it decreases. Electron diffraction studies of the as‐grown CdTe films showed the presence of both the zinc blende and the wurtzite phases, whereas those of the films heated in air showed only the zinc blende phase but along with additional phases: TeO2 (observed at 300 °C) and CdTeO3 (observed at 550 °C).
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.Nq Composition and phase identification
76.30.Lh Other ions and impurities
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

High‐resolution focused ion beam lithography

Shinji Matsui, Yoshikatsu Kojima, and Yukinori Ochiai

Appl. Phys. Lett. 53, 868 (1988); http://dx.doi.org/10.1063/1.100098 (3 pages) | Cited 15 times

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The resolution of focused ion beam (FIB) lithography has been studied by proximity effect measurement and fine pattern fabrication. In the proximity effect measurement, a 0.1 μm line pattern, according to the gap between square and line patterns, could be achieved. Moreover, 0.1 μm line and space poly(methylmethacrylate) patterns and 0.1 μm linewidth novolak based negative resist could be fabricated at 1×1013 and 2×1012 ions/cm2 dose by 260 keV Be++ FIB with 0.1 μm beam diameter, respectively.
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85.40.Hp Lithography, masks and pattern transfer
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Deep states in silicon‐on‐insulator substrates prepared by oxygen implantation using current deep level transient spectroscopy

P. K. McLarty, D. E. Ioannou, and H. L. Hughes

Appl. Phys. Lett. 53, 871 (1988); http://dx.doi.org/10.1063/1.100099 (3 pages) | Cited 11 times

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Current deep level transient spectroscopy was applied using enhancement n‐channel metal‐oxide‐semiconductor field‐effect transistors fabricated in silicon‐on‐insulator substrates (prepared by oxygen implantation) to study the deep levels existing in the substrates. The current transients are not affected by the large series resistances which affect the measurement of capacitance transients on thin films. For the transistors used in this work a hole trap was found with energy ET=0.63 eV above the valence‐band edge. The concentration and capture cross section of this state were estimated to be 1014 cm−3 and 10−16 cm2, respectively.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
73.61.Ey III-V semiconductors

Effects of microcracking on AlxGa1−xAs‐GaAs quantum well lasers grown on Si

D. G. Deppe, D. C. Hall, N. Holonyak, R. J. Matyi, H. Shichijo, and J. E. Epler

Appl. Phys. Lett. 53, 874 (1988); http://dx.doi.org/10.1063/1.100100 (3 pages) | Cited 12 times

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Data are presented demonstrating continuous (cw) 300 K operation of p‐n AlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si and fabricated with naturally occurring microcracks running parallel to or perpendicular to the laser stripe. Operation for over 17 h is demonstrated for a diode with a parallel microcrack inside the active region. Diodes with microcracks perpendicular to the laser stripe exhibit relatively ‘‘square’’ light output versus current (L‐I) characteristics and spectral behavior indicating internal reflections involving coupled multiple (internal) cavities. The lasers have operated (cw, 300 K) as long as 16 h.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
62.20.M- Structural failure of materials

Boron redistribution in doping superlattices grown by silicon molecular beam epitaxy using B2O3

T. E. Jackman, D. C. Houghton, M. W. Denhoff, Song Kechang, J. McCaffrey, J. A. Jackman, and C. G. Tuppen

Appl. Phys. Lett. 53, 877 (1988); http://dx.doi.org/10.1063/1.100101 (3 pages) | Cited 11 times

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Coevaporation of B2O3 during silicon molecular beam epitaxy has been used to prepare heavily doped superlattices (pipi’s). Full activation up to 3×1020 cm−3 (100 times the solid solubility limit) was obtained at growth temperatures below 700 °C. Significant boron redistribution has been observed into the undoped layers when the dopant level in the intentionally doped layers exceeds the solid solubility limit and the growth temperature is greater than 700 °C. Oxygen was not incorporated into the lattice for growth temperatures above 700 °C when using B2O3 as the source of boron, a Si growth rate for 0.5 nm s−1, and a B2O3 arrival rate of ∼2×1013 cm−2 s−1.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
66.30.J- Diffusion of impurities

Free‐carrier and temperature effects in amorphous silicon thin films

C. Tanguy, D. Hulin, A. Mourchid, P. M. Fauchet, and S. Wagner

Appl. Phys. Lett. 53, 880 (1988); http://dx.doi.org/10.1063/1.100102 (3 pages) | Cited 14 times

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The electronic and thermal contributions to photoinduced changes in the optical properties of hydrogenated amorphous silicon (a‐Si:H) films can be distinguished in pump‐probe experiments by an appropriate choice of the probe wavelength. Intraband absorption decreases strongly with carrier localization.
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78.66.-w Optical properties of specific thin films
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Piezoreflectance characterization of double‐barrier resonant tunneling structures

R. L. Tober, J. Pamulapati, J. E. Oh, and P. K. Bhattacharya

Appl. Phys. Lett. 53, 883 (1988); http://dx.doi.org/10.1063/1.100103 (3 pages) | Cited 6 times

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The piezoreflectance technique has been used to optically characterize resonant tunneling structures that utilize isolated single quantum wells. The heavy‐ and light‐hole transitions associated with the quantum wells were prominent in the spectra of samples with barrier widths ranging from 50 to 34 Å. Their spectral positions depended not only on quantum well and barrier thicknesses, but also significantly on the amount of carrier confinement produced by barrier height. Furthermore, variations in the magnitude of impurity transitions could be observed in the spectra of different samples.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Raman scattering in InAs1−xSbx grown by organometallic vapor phase epitaxy

Y. T. Cherng, K. Y. Ma, and G. B. Stringfellow

Appl. Phys. Lett. 53, 886 (1988); http://dx.doi.org/10.1063/1.100104 (2 pages) | Cited 13 times

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The first investigation of the lattice dynamics of the ternary alloy InAs1−xSbx has been made using Raman scattering. The InAs1−xSbx epilayers were grown by organometallic vapor phase epitaxy on (100) InAs and InSb substrates over the entire composition range. The spectra in the optical phonon frequency range show only one set of longitudinal‐ and transverse‐optical (LO,TO) modes, which vary continuously with composition for x≤0.6, and two sets of LO modes for x>0.6. Both disorder‐activated acoustic and optical phonon modes also appear.
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78.30.Fs III-V and II-VI semiconductors
63.20.-e Phonons in crystal lattices

In situ measurements of SiO(g) production during dry oxidation of crystalline silicon

R. E. Walkup and S. I. Raider

Appl. Phys. Lett. 53, 888 (1988); http://dx.doi.org/10.1063/1.100105 (3 pages) | Cited 56 times

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We report in situ measurements of SiO(g) evolution during the oxidation of silicon by O2 for a range of experimental conditions including the transition from active to passive oxidation. The results show that this transition occurs when the SiO(g) partial pressure reaches the equilibrium vapor pressure for the reaction Si(s)+SiO(s)⇄2SiO(g). During the growth of a SiO2 film, there is no significant transport of SiO molecules into the gas phase.
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81.65.-b Surface treatments
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Enhanced electrical quality of low‐temperature (Tdep≤800 °C) epitaxial silicon deposited by plasma‐enhanced chemical vapor deposition

S. Ohi, W. R. Burger, and R. Reif

Appl. Phys. Lett. 53, 891 (1988); http://dx.doi.org/10.1063/1.100106 (3 pages) | Cited 2 times

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We report in this letter the results of experiments comparing the electrical properties of low‐temperature epitaxial silicon deposited by plasma‐enhanced chemical vapor deposition (PECVD) and ultralow pressure chemical vapor deposition (U‐LPCVD). Diode characteristics indicate a strong dependence of the electrical quality of the PECVD films on the plasma power. The data indicate that, in contrast to a purely thermal deposition (the U‐LPCVD films), a low‐power PECVD deposition (2.5–5 W) improves the electrical quality of the epitaxial layers and lowers the minimum epitaxy temperature. A high‐power plasma (20 W), however, degrades the electrical characteristics in comparison to a strictly thermal deposition.
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73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
85.30.Kk Junction diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
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