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19 Sep 1988

Volume 53, Issue 12, pp. 1027-1128

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Electrical and optical studies of dislocation filtering in InGaAs/GaAs strained‐layer superlattices

I. J. Fritz, P. L. Gourley, L. R. Dawson, and J. E. Schirber

Appl. Phys. Lett. 53, 1098 (1988); http://dx.doi.org/10.1063/1.100032 (3 pages) | Cited 15 times

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We report electrical transport and optical studies of the efficiency with which an In0.2Ga0.8As/GaAs strained‐layer superlattice (SLS) can filter threading dislocations generated in a thick In0.1 Ga0.9 As layer grown on GaAs. The electrical studies, the first of their kind, rely on a novel test structure which allows electrical characterization of just the top portion of the SLS, with the bottom portion acting as the dislocation filter. For optical characterization we detect dislocations directly by photoluminescence microscopy. The electrical results show that ∼3–6 periods of filtering are needed to attain high mobilities. The photoluminescence microimages show a small density of dislocations near the top of an eight‐period SLS but no dislocations for 11 or more periods. Filtering with In0.2Ga0.8As/GaAs SLS’s is more effective than with GaAs0.8P0.2/GaAs SLS’s, possibly because of larger interlayer differences in strain and elastic constants for the former.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors

Initial growth of gallium arsenide on silicon by organometallic vapor phase epitaxy

S. J. Rosner, Jun Amano, J. W. Lee, and J. C. C. Fan

Appl. Phys. Lett. 53, 1101 (1988); http://dx.doi.org/10.1063/1.100033 (3 pages) | Cited 8 times

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Thin films (less than 1000 nm) of heteroepitaxial GaAs on Si were grown by organometallic vapor phase epitaxy with the intent of comparing the initial stages of growth with the authors’ previous experience in examining films grown by molecular beam epitaxy (MBE). The films were found to be epitaxial after 10 nm of growth at 425 °C, and to uniformly cover the substrate completely, unlike the asymmetrical island nature of MBE films grown under comparable conditions. The relaxation of strain was found to be quite similar to the MBE case.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.60.Bs Mechanical and acoustical properties

Linearly ramped temperature transient rapid thermal oxidation of silicon

Mehrdad M. Moslehi, Ahmad Kermani, and Krishna C. Saraswat

Appl. Phys. Lett. 53, 1104 (1988); http://dx.doi.org/10.1063/1.100656 (3 pages) | Cited 1 time

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New results on the growth kinetics of rapid thermal oxidation of Si using transient linearity ramped saw‐toothed and triangular wafer temperature versus time profiles are reported. The peak wafer temperature and the heat‐up/cool‐down rates were varied in the ranges of 950–1200 °C and 1–200 °C/s, respectively. The grown oxides were ∼20–200 Å thick depending on the growth conditions. A comparison of the experimental data with the numerical simulation results reveals that the thin oxide steady‐state dry oxidation kinetics model underestimates the thickness of oxides grown by the ramped temperature transient oxidations.
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81.65.-b Surface treatments
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.40.Hp Lithography, masks and pattern transfer

Growth, patterning, and weak‐link fabrication of superconducting YBa2Cu3O7−x thin films

G. C. Hilton, E. B. Harris, and D. J. Van Harlingen

Appl. Phys. Lett. 53, 1107 (1988); http://dx.doi.org/10.1063/1.100657 (3 pages) | Cited 12 times

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We have grown thin films of the high‐temperature superconducting ceramic oxides and investigated techniques for fabricating weak‐link structures. Films of YBa2Cu3O7−x grown on SrTiO3 by a combination of dc magnetron sputtering and thermal evaporation from the three sources have been patterned into microbridges with widths down to 2 μm. We find evidence that the bridges behave as arrays of Josephson‐coupled superconducting islands. Further weak‐link behavior is induced by in situ modification of the coupling by ion milling through the bridge.
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
74.50.+r Tunneling phenomena; Josephson effects
81.15.Cd Deposition by sputtering

High Tc superconductivity in Y‐Ba‐Cu‐O screen‐printed films

Maurizio Sacchi, Fausto Sirotti, Bruno Morten, and Maria Prudenziati

Appl. Phys. Lett. 53, 1110 (1988); http://dx.doi.org/10.1063/1.100658 (3 pages) | Cited 16 times

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We have prepared screen‐printed films of the Y‐Ba‐Cu‐O compound on BeO and Al2O3 ceramic substrates. Transition to full superconductive state was obtained for all the samples. The related parameters (Tonset, Tc, ΔT) and some structural properties are reported.
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
74.20.Mn Nonconventional mechanisms
74.20.Rp Pairing symmetries (other than s-wave)
74.25.-q Properties of superconductors

Reduced moisture‐induced degradation of YBaCuO superconducting films by silver and high deposition temperatures

Chin‐An Chang

Appl. Phys. Lett. 53, 1113 (1988); http://dx.doi.org/10.1063/1.100034 (3 pages) | Cited 32 times

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Moisture‐induced degradation of the YBaCuO superconducting films is studied using layer structures deposited at low temperatures with and without a silver covering layer, and using films deposited at high temperatures with a silver barrier layer. For the former, Ag/Cu/BaO/Y2O3/YSZ and Cu/BaO/Y2O3/YSZ are compared, where YSZ stands for yttria‐stabilized zirconia substrate. Superconducting films with zero resistance between 80 and 87 K are obtained, depending on the annealing temperatures. Upon removing the samples from liquid nitrogen and warming in flowing nitrogen, a large rise in film resistivity is observed for the structures without silver, resulting in reduced temperatures for zero resistance and reduced critical current density at 77 K. Much less degradation is observed, however, with the samples containing a silver layer. For the samples deposited at high temperatures, no degradation is observed from similar moisture exposures.
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74.78.-w Superconducting films and low-dimensional structures
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
81.40.Rs Electrical and magnetic properties related to treatment conditions

Transport measurement of 32 K superconductivity in the Ba‐K‐Bi‐O system

S. Jin, T. H. Tiefel, R. C. Sherwood, A. P. Ramirez, E. M. Gyorgy, G. W. Kammlott, and R. A. Fastnacht

Appl. Phys. Lett. 53, 1116 (1988); http://dx.doi.org/10.1063/1.100659 (3 pages) | Cited 11 times

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We have successfully measured the electrical resistance of Ba‐K‐Bi‐O as a function of temperature and magnetic field, and thus confirmed the existence of superconductivity in the compound by transport measurement. The results from dense, black‐colored samples prepared from a starting composition with excess potassium (Ba0.6K1.2BiOx) indicate Tc (onset)∼32 K and Tc (R=0)∼22 K with a slightly negative temperature dependence of normal state resistance [R(300 K)/R(33 K)∼0.8]. The strong field dependence of the superconducting transition (500–1000 Oe/K) indicates the likelihood of a relatively low Hc in Ba‐K‐Bi‐O.
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74.10.+v Occurrence, potential candidates
74.70.-b Superconducting materials other than cuprates
74.25.Op Mixed states, critical fields, and surface sheaths

Levitation effects involving high Tc thallium based superconductors

William G. Harter, A. M. Hermann, and Z. Z. Sheng

Appl. Phys. Lett. 53, 1119 (1988); http://dx.doi.org/10.1063/1.100660 (3 pages) | Cited 26 times

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The thallium based superconductor Tl2Ca2Ba2Cu3O10+y has been shown to exhibit very stable and unusual levitation equilibria in various arrangements involving this material and permanent magnets. Attractive and repulsive forces are evident in experiments in which samples are levitated above and below magnets. Photographs of these experiments and approximate quantitative discussions of the results are given.
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74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.78.-w Superconducting films and low-dimensional structures
84.71.Ba Superconducting magnets; magnetic levitation devices

Formation of Tl‐Ca‐Ba‐Cu‐O films by diffusion of Tl into rf‐sputtered Ca‐Ba‐Cu‐O

C. X. Qiu and I. Shih

Appl. Phys. Lett. 53, 1122 (1988); http://dx.doi.org/10.1063/1.100661 (3 pages) | Cited 22 times

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Using a rf sputtering method with a single Ca‐Ba‐Cu‐O target (Ca:Ba:Cu=2:2:3), thin films with a thickness of about 1 μm have been deposited on ZrO2 and Si substrates. Diffusion experiments showed that the resistivity can be largely reduced by treating the films in an environment containing O2 and Tl. Treatment experiments at different temperatures further showed that the resistivity was affected by the temperature. By treating at 730 °C for about 1 h, a film on ZrO2 with a transition temperature of about 110 K has been obtained. Zero resistance was achieved at 75 K.
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74.78.-w Superconducting films and low-dimensional structures
81.15.Cd Deposition by sputtering
66.30.J- Diffusion of impurities
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition

Ba doping and rapid cooling effects on coercivity of Bi‐Dy‐Al‐Fe garnet films for magneto‐optical recording prepared by pyrolysis

Akiyoshi Itoh and Mark H. Kryder

Appl. Phys. Lett. 53, 1125 (1988); http://dx.doi.org/10.1063/1.100662 (2 pages) | Cited 7 times

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Al‐doped Bi‐Dy iron garnet films have been fabricated by the pyrolysis method on glass substrates, and the effects of Ba doping and rapid cooling on the coercivity (Hc) were investigated. Films were quenched from 660 °C to room temperature within about 120 s. Rapid cooling causes a rise of Hc, and a small amount of Ba doping enhances this effect. Hc values near 4200 Oe at room temperature were obtained in rapidly cooled films with the composition Bi1Dy1.96Ba0.04Fe4.4Al0.6O12.
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61.72.up Other materials
85.70.Sq Magnetooptical devices
42.79.Vb Optical storage systems, optical disks
81.40.Rs Electrical and magnetic properties related to treatment conditions
FREE

Comment on ‘‘Relaxation of strained‐layer semiconductor structures via plastic flow’’ [Appl. Phys. Lett. 51, 1325 (1987); 52, 852(E) (1988)]

R. People

Appl. Phys. Lett. 53, 1127 (1988); http://dx.doi.org/10.1063/1.100035 (1 page) | Cited 5 times

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Abstract Unavailable
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68.35.Gy Mechanical properties; surface strains
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.Dv Composition, segregation; defects and impurities
FREE

Response to ‘‘Comment on ‘Relaxation of strained‐layer semiconductor structures via plastic flow’ ’’ [Appl. Phys. Lett. 53, 1127 (1988)]

Brian W. Dodson and Jeffrey Y. Tsao

Appl. Phys. Lett. 53, 1128 (1988); http://dx.doi.org/10.1063/1.100036 (1 page)

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In response to the  Comment of Strained−Layer Semiconductor Structures Plastic Flow , we would like to point out that one of us has developed an approximate solution for the plastic flow model which interpolates between the Matthews−Blakeslee expression for thermodynamic critical thickness and the People−Bean expression for large amounts of relaxation, and that Peopl e’s comment that high resolution studies of relaxation in the SiGe/Si system are lacking is not quite correct. (AIP)
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68.35.Gy Mechanical properties; surface strains
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.Dv Composition, segregation; defects and impurities
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