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26 Sep 1988

Volume 53, Issue 13, pp. 1135-1219

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Unidirectional ring resonator in photorefractive bismuth silicon oxide with two pump beams

D. R. Erbschloe and L. Solymar

Appl. Phys. Lett. 53, 1135 (1988); http://dx.doi.org/10.1063/1.100663 (3 pages) | Cited 7 times

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Experiments using a new photorefractive gain mechanism involving two pump beams are described. A ring resonator is used to provide a frequency‐shifted signal beam. The gain with two pumps of equal intensity is found to exceed that with a single pump by about a factor of 4.
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78.20.Jq Electro-optical effects
78.20.-e Optical properties of bulk materials and thin films
85.60.-q Optoelectronic devices

High coupled power 1.3 μm edge‐emitting light‐emitting diode with a rear window and an integrated absorber

K. Gen‐ei, A. Tanioka, H. Suhara, and K. Chinen

Appl. Phys. Lett. 53, 1138 (1988); http://dx.doi.org/10.1063/1.100037 (3 pages) | Cited 4 times

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An InGaAsP edge‐emitting light‐emitting diode with a rear window and an integrated absorber is developed. Over 220 μW of coupled power is achieved, for the first time, without the use of antireflection front facet coating. Even at low ambient temperature of −40 °C the stimulated emission is well suppressed.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices

Equivalent circuit model for active‐layer photomixing: Parasitic‐free modulation of semiconductor lasers

Kerry J. Vahala and Michael A. Newkirk

Appl. Phys. Lett. 53, 1141 (1988); http://dx.doi.org/10.1063/1.100038 (3 pages) | Cited 3 times

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Direct modulation of a laser diode by active‐layer photomixing is studied in terms of an equivalent circuit model. The model shows that this modulation technique achieves nearly perfect immunity to package, chip, and junction‐related parasitic effects so that the measured modulation response reflects the intrinsic carrier‐photon dynamics. The nonlinear gain effect is included in the model.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Picosecond switching induced by saturable absorption in a nonlinear directional coupler

N. Finlayson, W. C. Banyai, E. M. Wright, C. T. Seaton, G. I. Stegeman, T. J. Cullen, and C. N. Ironside

Appl. Phys. Lett. 53, 1144 (1988); http://dx.doi.org/10.1063/1.100039 (3 pages) | Cited 22 times

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Fluence‐induced changes in absorption of a semiconductor‐doped‐glass directional coupler have resulted in nonlinear optical switching on a picosecond time scale. The functional dependence on the incident fluence confirms that the switching is dominated by absorption saturation.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics

Temperature dependence of the third‐order nonlinear optical susceptibilities in polysilanes and polygermanes

J.‐C. Baumert, G. C. Bjorklund, D. H. Jundt, M. C. Jurich, H. Looser, R. D. Miller, J. Rabolt, R. Sooriyakumaran, J. D. Swalen, and R. J. Twieg

Appl. Phys. Lett. 53, 1147 (1988); http://dx.doi.org/10.1063/1.100040 (3 pages) | Cited 72 times

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Optical third‐harmonic generation was used to measure third‐order nonlinear susceptibilities χ(3) for thin films of planar zigzag polysilanes and polygermanes. A χ(3) of 11.3×10−12 esu was measured, the largest value ever reported for a polymer with transparency throughout the visible. The value of χ(3) was found to vary substantially with thermally induced reversible changes in polymer backbone conformation and also with film thickness.
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78.66.Qn Polymers; organic compounds
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Stable single‐mode operation of a 30 GHz free‐electron laser

R. J. Harvey and F. A. Dolezal

Appl. Phys. Lett. 53, 1150 (1988); http://dx.doi.org/10.1063/1.100041 (3 pages) | Cited 8 times

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Stable, single‐mode, linearly polarized emission has been achieved with a free‐electron laser (FEL) oscillator for pulses of up to 30 μs when gain differences are used to select between a limited number of cavity modes. The frequency‐ and phase‐modulation noise spectra are monitored by heterodyning and homodyning techniques, and the measured linewidth is near 70 kHz at 31 GHz. The FEL oscillator mechanism is inherently frequency stable and step tunable over a practical range of control parameters determined primarily by the stability of the electron beam voltage.
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41.60.Cr Free-electron lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Operating characteristics and elevated temperature lifetests of focused ion beam micromachined transverse junction stripe lasers

R. K. DeFreez, J. Puretz, J. Orloff, R. A. Elliott, H. Namba, E. Omura, and H. Namizaki

Appl. Phys. Lett. 53, 1153 (1988); http://dx.doi.org/10.1063/1.100042 (3 pages) | Cited 3 times

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The operating characteristics of transverse junction stripe diode lasers with focused ion beam micromachined mirrors are shown to be comparable to those with cleaved facet mirrors. Stable cw operation for more than 2200 h was observed in an aging test at 55 °C.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.82.-m Integrated optics
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

High‐speed distributed feedback lasers grown by hydride epitaxy

H. Temkin, R. A. Logan, R. F. Karlicek, K. E. Strege, J. P. Blaha, P. M. Gabla, A. Savage, and K. Oatis

Appl. Phys. Lett. 53, 1156 (1988); http://dx.doi.org/10.1063/1.100043 (3 pages) | Cited 8 times

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We have used hydride vapor phase epitaxy to prepare re‐entrant mesa buried‐heterostructure distributed feedback lasers. The grating is overgrown uniformly with minimal amplitude reduction. A semi‐insulating Fe‐InP blocking layer around the etched mesas is grown very reproducibly with little dependence upon the details of mesa etching. Laser diodes show cw thresholds of ∼25 mA. Single‐mode operation has been shown at power levels as high as 18 mW and temperatures up to 100 °C. Modulation bandwidth in excess of ∼8 GHz has been demonstrated with simple and reliable full surface Ohmic contacts.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

High‐power nonplanar quantum well heterostructure periodic laser arrays

M. E. Givens, C. A. Zmudzinski, R. P. Bryan, and J. J. Coleman

Appl. Phys. Lett. 53, 1159 (1988); http://dx.doi.org/10.1063/1.100044 (3 pages) | Cited 4 times

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Optical pulsed powers of 8 W from a single uncoated facet and low (<200 A/cm2) threshold current densities have been obtained from 3.1‐mm‐wide (cavity length=483 μm) nonplanar periodic quantum well heterostructure laser diode arrays grown by metalorganic chemical vapor deposition over a selectively etched corrugated substrate. The resulting nonplanar lateral active layer profile provides index guiding and suppresses lateral lasing regardless of device width.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Optical‐fiber‐based photoluminescence spectrometer

M. S. Whalen and M. J. R. Martyak

Appl. Phys. Lett. 53, 1162 (1988); http://dx.doi.org/10.1063/1.100009 (3 pages) | Cited 1 time

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An optical‐fiber‐based apparatus for measuring photoluminescence spectra has been demonstrated. The use of a variable ratio fiber directional coupler and an integral fiber microlens greatly simplifies the optical system for both photoluminescence excitation and collection and permits the attainment of high output power densities (40 kW/cm2) for modest fiber input powers (<5 mW). Spectra from several III‐V semiconductor samples are shown which illustrate the sensitivity of the apparatus.
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07.60.Rd Visible and ultraviolet spectrometers
78.47.-p Spectroscopy of solid state dynamics
78.55.-m Photoluminescence, properties and materials

Supermode control in diffraction‐coupled semiconductor laser arrays

D. Mehuys, K. Mitsunaga, L. Eng, W. K. Marshall, and A. Yariv

Appl. Phys. Lett. 53, 1165 (1988); http://dx.doi.org/10.1063/1.100010 (3 pages) | Cited 19 times

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Supermode control is demonstrated theoretically and experimentally in diffraction‐coupled semiconductor laser arrays. A linear theory is presented to determine the supermode threshold gain as a function of the coupling cavity length. By fabricating devices with different coupling cavity lengths, array operation in both the fundamental and highest order supermodes is achieved.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes

1.5 μm tunable wavelength filter with wide tuning range and high constant gain using a phase‐controlled distributed feedback laser diode

T. Numai, S. Murata, and I. Mito

Appl. Phys. Lett. 53, 1168 (1988); http://dx.doi.org/10.1063/1.100011 (2 pages) | Cited 2 times

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We demonstrate a 1.5 μm tunable wavelength filter which uses a phase‐controlled distributed feedback laser diode. Tuning range as wide as 43 GHz (3.4 Å) with 27 dB constant gain has been achieved. A five‐channel wavelength selection with less than −10 dB crosstalk is expected with this filter.
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42.79.Ci Filters, zone plates, and polarizers
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Second‐harmonic generation at 421 nm using injection‐locked GaAlAs laser array and KNbO3

M. K. Chun, L. Goldberg, and J. F. Weller

Appl. Phys. Lett. 53, 1170 (1988); http://dx.doi.org/10.1063/1.100012 (2 pages) | Cited 42 times

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Significant improvement in frequency doubling efficiency of a cw output of a GaAlAs laser diode is described. Up to 0.72 mW of 421 nm power was generated by illuminating a KNbO3 crystal with a 270 mW diffraction‐limited beam generated by an externally injection‐locked laser diode array, operating in a single‐mode and single‐far‐field lobe.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Fc Modulation, tuning, and mode locking

Heavy ion excitation of solid rare gases

B. Busch, A. Ulrich, W. Krötz, and G. Ribitzki

Appl. Phys. Lett. 53, 1172 (1988); http://dx.doi.org/10.1063/1.100013 (3 pages) | Cited 9 times

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The vacuum ultraviolet (VUV) emission of solid Ar, Kr, and Xe targets excited by heavy ion beams was studied in order to explore the possibility of VUV laser action. A pulsed 75 MeV 32S beam with 14.4 μJ pulse energy and 2 ns pulse width was used. Wavelength spectra measured during 10 and 90 ns time windows after the beam pulse showed strong VUV emission from the decay of the quasi‐molecular 1Σ+u and 3Σ+u self‐trapped excitons. The decay times of these states were measured for all three rare‐gas targets. Cross sections for stimulated emission of 5.7×10−18, 1.3×10−17, and 2.4×10−17 cm2 in Ar, Kr, and Xe, respectively, were deduced from the linewidth and lifetime of the 1Σ+u to ground‐state transition. A 1Σ+u state population density of 9.6×1013 cm−3 was determined in solid Xe from an absolute intensity measurement.
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33.20.Ni Vacuum ultraviolet spectra
33.70.Fd Absolute and relative line and band intensities
42.55.Lt Gas lasers including excimer and metal-vapor lasers

Ar incorporation in epitaxial TiN films deposited by reactive magnetron sputtering in mixed Ar/N2 discharges

L. Hultman, B.‐O. Johansson, J.‐E. Sundgren, L. C. Markert, and J. E. Greene

Appl. Phys. Lett. 53, 1175 (1988); http://dx.doi.org/10.1063/1.100014 (3 pages) | Cited 16 times

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TiN films were grown on (100), (110), and (111) oriented MgO by reactive magnetron sputtering from a Ti target in mixed Ar/N2 discharges. During film growth at substrate temperatures Ts ranging from 450 to 900 °C, an applied negative substrate bias Vs (0≤Vs≤600 V) was used to vary the flux and energy of impinging Ar+ and N+2 ions. Electron channeling and transmission electron microscopy were used to show that films grown at Ts≥550 °C were epitaxial with a defect density that decreased with increasing Ts. At a constant Ts=700 °C, the films were found to remain epitaxial as Vs was increased from 0 to 200 V, but the crystalline quality clearly deteriorated with Vs=400 V and at Vs=600 V the films were polycrystalline. Energy dispersive x‐ray analysis showed that the trapped Ar concentration CAr in the films was a function of both Vs and Ts. For Ts=700 °C, CAr increased with increasing Vs to reach a maximum CmaxAr at 400 V before decreasing again. The relative value of CmaxAr varied with orientation in the following manner: (110)>(100)>(111). At a constant Vs=400 V, CmaxAr for (110) oriented films occurred at Ts≊750 °C. These results are explained based upon ion channeling efficiency as a function of film orientation and defect structure.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Cd Deposition by sputtering
68.55.-a Thin film structure and morphology
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Precipitation of group V elements and Ge in SiO2 and their drift in a temperature gradient

G. K. Celler, L. E. Trimble, T. T. Sheng, S. G. Kosinski, and K. W. West

Appl. Phys. Lett. 53, 1178 (1988); http://dx.doi.org/10.1063/1.100664 (3 pages) | Cited 10 times

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It is shown that P, Sb, and Ge ions implanted in SiO2 precipitate into spherical clusters of up to 1000 Å diameter when heat treated in an oxygen‐free ambient. This behavior is similar to that reported earlier for As implants. The clusters can be detected directly by transmission electron microscopy, or inferred from the unidirectional drift of the doped zone in a temperature gradient. Boron, a representative of group III, is the only element among those tested that does not migrate in a ∇T, suggesting the absence of phase separation.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
66.30.J- Diffusion of impurities
81.30.Mh Solid-phase precipitation

Real‐time observations of hydrogen drift and diffusion in silicon

C. H. Seager and R. A. Anderson

Appl. Phys. Lett. 53, 1181 (1988); http://dx.doi.org/10.1063/1.100015 (3 pages) | Cited 67 times

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Real‐time detection of hydrogen motion and bonding has been accomplished by capacitance voltage profiling of various Schottky and metal‐ insulator‐semiconductor capacitors during low‐energy H ion beam injection into the barrier metallization. Finite element analysis modeling of the data indicates that a significant fraction of H interstitials are positively charged, and that bonding of these species with charged boron acceptors proceeds with the large cross section expected of a Coulomb capture process. The 300 K value of the H diffusivity is ≂10−10 cm2/s in agreement with extrapolation of high‐temperature diffusivity data.
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66.30.J- Diffusion of impurities
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.30.+y Surface double layers, Schottky barriers, and work functions

Growth of CdTe on GaAs by electrodeposition from an aqueous electrolyte

P. Sircar

Appl. Phys. Lett. 53, 1184 (1988); http://dx.doi.org/10.1063/1.100016 (2 pages) | Cited 6 times

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CdTe film was grown on conducting, n‐type (100) GaAs single crystals by electrodeposition from an aqueous electrolyte, containing Cd and Te complexes. The CdTe film was specular and had predominantly (111) orientation, as determined from x‐ray diffraction spectra.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology

Formation of nickel silicides in the Ni/Si3N4/Si system during rapid thermal annealing

F. Edelman, E. Y. Gutmanas, A. Katz, and R. Brener

Appl. Phys. Lett. 53, 1186 (1988); http://dx.doi.org/10.1063/1.100665 (3 pages) | Cited 8 times

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Effect of rapid thermal annealing (RTA) at 800, 1000, and 1200 °C on the Ni/Si3N4/Si system has been studied employing electron microscopy, Auger electron spectroscopy, and x‐ray diffraction analysis. Formation of NiSi or NiSi2 silicides on the Ni/Si3N4 interface and of NiSi2 silicide on the Si3N4/Si interface was observed after RTA. This was a result of the diffusion of Si into deposited 250‐nm‐thick Ni layer and the diffusion of Ni through 140‐nm‐thick amorphous Si3N4 layer into the Si substrate. The diffusion coefficient of Ni in amorphous Si3N4 was estimated to be D≂103 exp(−3.2 eV/kT), cm2/s.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.Fx Diffusion; interface formation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
66.30.Ny Chemical interdiffusion; diffusion barriers

Heteroepitaxial growth of InSb on (100)GaAs using molecular beam epitaxy

G. M. Williams, C. R. Whitehouse, C. F. McConville, A. G. Cullis, T. Ashley, S. J. Courtney, and C. T. Elliott

Appl. Phys. Lett. 53, 1189 (1988); http://dx.doi.org/10.1063/1.100405 (3 pages) | Cited 38 times

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Molecular beam epitaxy has been used to grow thin (0.5 μm<t<10 μm) InSb epilayers on (100) GaAs substrates. Reflection high‐energy electron diffraction studies indicate that the early stages of layer growth involve three‐dimensional nucleation and the formation of a nonpseudomorphic structure. High‐resolution electron microscopy studies of the interface are reported for the first time and directly confirm that the large lattice mismatch (14.6% at room temperature) is accommodated by the generation of misfit dislocations. Nevertheless, the structural quality of the InSb is observed to improve dramatically with increasing thickness. Detailed secondary‐ion mass spectrometry measurements also demonstrate that there is no large‐scale interdiffusion of constituent elements at the interface. Finally, electrical measurements show the InSb to be p type and comparable with homoepitaxial material.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
73.61.Ey III-V semiconductors

Physical parameters of GaInAs/Si3N4 interface states obtained by the conductance method

Joël Barrier, Pierre Boher, and Monique Renaud

Appl. Phys. Lett. 53, 1192 (1988); http://dx.doi.org/10.1063/1.100666 (3 pages) | Cited 1 time

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Interface state parameters were studied in TiAu/Si3N4/Ga0.47In0.53As metal‐insulator‐semiconductor capacitors by conductance and capacitance measurements at various temperatures. The analysis of the data, taking into account the variation of the capture cross section versus energy, allows us to obtain the density of states, the capture cross section, the surface potential, and the dispersion parameter. The numerical values agree very well with results provided by capacitance transient methods at low temperatures (isothermal capacitance transient spectroscopy and deep level transient spectroscopy).
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.20.At Surface states, band structure, electron density of states
84.32.Tt Capacitors

Pressure dependence of the DX center in Ga1−xAlxAs:Te in the vicinity of the Γ‐X crossover

M. F. Li, W. Shan, P. Y. Yu, W. L. Hansen, E. R. Weber, and E. Bauser

Appl. Phys. Lett. 53, 1195 (1988); http://dx.doi.org/10.1063/1.100017 (3 pages) | Cited 7 times

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The pressure dependence of the DX center in Ga1−xAlxAs :Te has been studied in two samples with x=0.15 and 0.35, respectively. The pressure coefficients of the activation energies for both emission and capture were found to change sign when the band gap of GaAlAs changes from direct to indirect. These results, together with previous experiments, suggested that electrons can be emitted from and capture into the DX centers via both L and X valleys.
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71.55.Eq III-V semiconductors

Photobias effect in laser‐controlled etching of InP

A. E. Willner, D. V. Podlesnik, H. H. Gilgen, and R. M. Osgood

Appl. Phys. Lett. 53, 1198 (1988); http://dx.doi.org/10.1063/1.100018 (3 pages) | Cited 8 times

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We have investigated laser‐assisted photochemical etching of InP in aqueous solutions without external electric fields. The process produces highly directional, high‐aspect features with smooth vertical walls. Additionally, we demonstrate that the laser etching rate may be controlled externally by the application of a secondary light source.
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81.65.-b Surface treatments
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Al0.3Ga0.7As/Al0.05Ga0.95As light‐emitting diodes on GaAs‐coated Si substrates grown by liquid phase epitaxy

Shiro Sakai, Shi S. Chang, Ramu V. Ramaswamy, Jae‐Hoon Kim, Gouri Radhakrishnan, John K. Liu, and Joseph Katz

Appl. Phys. Lett. 53, 1201 (1988); http://dx.doi.org/10.1063/1.100019 (3 pages) | Cited 4 times

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Al0.3Ga0.7As/Al0.05Ga0.95As double‐heterostructure light‐emitting diodes (LED’s) were successfully grown for the first time by liquid phase epitaxy on a GaAs‐coated Si substrate that was prepared by a sequential process of migration‐enhanced epitaxy and molecular beam epitaxy. The edge‐emitting LED’s had diode ideality factors of 1.54 at a forward‐biased voltage higher than 0.9 V and external quantum efficiencies of 3.3×10−3 W/A per facet. This efficiency is 50 times higher than the previously reported value, and is on the same order as that of AlGaAs homojunction LED’s fabricated on the GaAs substrates by liquid phase epitaxy.
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85.60.Jb Light-emitting devices
85.60.-q Optoelectronic devices
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Strain and misorientation in GaAs grown on Si(001) by organometallic epitaxy

S. K. Ghandhi and J. E. Ayers

Appl. Phys. Lett. 53, 1204 (1988); http://dx.doi.org/10.1063/1.100020 (3 pages) | Cited 23 times

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Epitaxial GaAs grown on Si(001) by organometallic vapor phase epitaxy has been characterized for strain and misorientation, using double‐crystal x‐ray diffraction. (004) and (115) rocking curves indicate that the GaAs is under biaxial tensile stress, σ∥≊2.1×109 dyn/cm2, and is tetragonally distorted with unit cell dimensions 5.6424±0.0012 Å and 5.6656±0.0012 Å. The dislocation density in the GaAs, determined from the rocking curve width, is less than 4.2×107 cm−2. The GaAs(001) axis is tilted with respect to the Si(001), toward the substrate normal. This misorientation is a strain relief mechanism and is caused by shear strain energy in the nucleating GaAs.
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68.55.-a Thin film structure and morphology
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.60.Bs Mechanical and acoustical properties
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
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