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3 Oct 1988

Volume 53, Issue 14, pp. 1227-1349

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Subnanosecond switching of bistable tandem lasers by subpicojoule optical triggering

Ulf Öhlander, Peter Blixt, and Olof Sahlén

Appl. Phys. Lett. 53, 1227 (1988); http://dx.doi.org/10.1063/1.100448 (3 pages) | Cited 2 times

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We report on the switching‐on characteristics of a bistable two‐section laser diode triggered by subnanosecond optical input pulses. Minimum switching energy as a function of current bias level was measured for different input pulse wavelengths. Subnanosecond and subpicojoule switching was obtained. Estimating the input coupling to be 10%, the lowest bistable switching energy recorded was 23 fJ. The fastest recorded rise time was less than 100 ps.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Reduction of degradation in vapor phase transported InP/InGaAsP mushroom stripe lasers

H. Jung, E. G. Burkhardt, and W. Pfister

Appl. Phys. Lett. 53, 1230 (1988); http://dx.doi.org/10.1063/1.100022 (3 pages)

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The rapid degradation rate generally observed in InP/InGaAsP mushroom stripe lasers can be considerably decreased by regrowing the open sidewalls of the active stripe with low‐doped InP in a second epitaxial step using the hydride vapor phase transport technique. This technique does not change the fundamental laser parameters like light‐current and current‐voltage characteristics. Because of this drastic reduction in degradation, the vapor phase epitaxy regrown InP/InGaAsP mushroom laser seems to be an interesting candidate for application in optical communication.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Influence of pulse width on ultraviolet laser ablation of poly(methyl methacrylate)

R. Srinivasan and Bodil Braren

Appl. Phys. Lett. 53, 1233 (1988); http://dx.doi.org/10.1063/1.100023 (3 pages) | Cited 10 times

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The etching of poly(methyl methacrylate) using pulses of 248 nm laser radiation which had a full width at half maximum (FWHM) of 40–100 ns is reported. These pulses were created by combining two identical pulses, each of 40 ns FWHM, with a set time delay. The etch depth/pulse is sensitive to the pulse width and, therefore, the power density in this polymer. It can be explained by the changes in absorptivity during a pulse that have been reported by G. M. Davis and M. C. Gower [J. Appl. Phys. 61, 2090 (1987)]. The shape of the pulse was also found to influence the etch depth/pulse. The etching of polyimide by these extended pulses shows trends that are opposite to those observed in poly(methyl methacrylate). In this instance, the shielding of the latter portion of the incoming pulse by the products that are ablated by the front portion is probably a serious effect.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments

High‐power, diffraction‐limited‐beam operation from diode‐laser phase‐locked arrays operating in coupled first‐order modes

L. J. Mawst, D. Botez, and T. J. Roth

Appl. Phys. Lett. 53, 1236 (1988); http://dx.doi.org/10.1063/1.100024 (3 pages) | Cited 1 time

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A novel index‐guided, wide‐waveguide coupled array structure grown entirely by metalorganic chemical vapor deposition has been demonstrated, which operates in a stable high‐order array mode, remaining nearly diffraction limited to high drive currents (>5Ith ) and high‐power levels (145 mW/uncoated facet). Strong lateral mode confinement (Δneff ≊1×10−2 ) at the element level coupled with the wide‐waveguide geometry ensures operation in coupled first‐order element modes. The out‐of‐phase operating array structure has interelement coupling that becomes stronger with increasing drive level, thereby offering stability against gain spatial hole burning at both the array level and the individual element level.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Gn Optical waveguides and couplers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Distortionless picosecond pulse amplification and gain compression in a traveling‐wave InGaAsP optical amplifier

J. M. Wiesenfeld, G. Eisenstein, R. S. Tucker, G. Raybon, and P. B. Hansen

Appl. Phys. Lett. 53, 1239 (1988); http://dx.doi.org/10.1063/1.100025 (3 pages) | Cited 19 times

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Pulses of 3–9 ps duration at wavelengths between 1.22 and 1.27 μm are amplified by a 1.3 μm InGaAsP traveling‐wave optical amplifier. The gain decreases linearly with the output energy by up to 2.6 dB at the highest available energies. The output energy and peak power of the amplified pulses are as large as 4 pJ and 400 mW, respectively. It is shown that the gain compression can be described by treating the amplifier as a homogeneously broadened two‐level system. No distortion of the pulse shape is observed after amplification.
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42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

GaAs‐on‐InP heteroepitaxial waveguides grown by molecular beam epitaxy

Y. H. Lo, R. J. Deri, J. Harbison, B. J. Skromme, M. Seto, D. M. Hwang, and T. P. Lee

Appl. Phys. Lett. 53, 1242 (1988); http://dx.doi.org/10.1063/1.100026 (3 pages) | Cited 6 times

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The GaAs‐on‐InP heteroepitaxial waveguides are demonstrated for the first time using molecular beam epitaxy. A propagation loss of 9.3 dB/cm was obtained for waveguides grown on a 3° off (100) InP substrate. Compared to the 16 dB/cm loss for waveguides on (100) InP substrates, the waveguides on misoriented InP substrates exhibited a significantly lower loss. Based on photoluminescence studies, we attribute the propagation loss in both samples mainly to optical absorption by crystal defects. Defect densities of 4×1017 cm−3 and 2×1017 cm−3 are estimated for material on (100) and 3° off (100) substrates, respectively. Such heteroepitaxial waveguides may have applications in long‐wavelength photonic integrated circuits.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors
42.79.Gn Optical waveguides and couplers

Ultrafast time response of optical nonlinearity in polysilane polymers

Lina Yang, Q. Z. Wang, P. P. Ho, R. Dorsinville, R. R. Alfano, W. K. Zou, and N. L. Yang

Appl. Phys. Lett. 53, 1245 (1988); http://dx.doi.org/10.1063/1.99991 (3 pages) | Cited 31 times

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Ultrafast relaxation kinetics of third‐order nonlinear susceptibility χ(3) of polysilane polymers was measured using both the picosecond Kerr gate and forward degenerated four‐wave mixing. The relative contributions from various nonlinear decay mechanisms were estimated from the time response. The third‐order nonlinear response was measured to be faster than 3 ps arising from electronic mechanism. A slower component is assigned to the refractive index grating due to light pressure.
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78.20.-e Optical properties of bulk materials and thin films
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

High‐peak‐power low‐threshold AlGaAs/GaAs stripe laser diodes on Si substrates grown by migration‐enhanced molecular beam epitaxy

Jae‐Hoon Kim, Akbar Nouhi, Gouri Radhakrishnan, John K. Liu, Robert J. Lang, and Joseph Katz

Appl. Phys. Lett. 53, 1248 (1988); http://dx.doi.org/10.1063/1.99992 (3 pages) | Cited 6 times

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A high‐peak‐power low‐threshold AlGaAs/GaAs double‐heterostructure stripe laser diode on Si substrates grown by hybrid migration‐enhanced molecular beam epitaxy (MEMBE) and metalorganic chemical vapor deposition (MOCVD) has been demonstrated for the first time. These devices showed the highest peak powers of up to 184 mW per facet reported so far for double‐heterostructure stripe laser diodes on Si substrates, room‐temperature pulsed threshold currents as low as 150 mA, and differential quantum efficiencies as high as 30% without mirror facet coating. An intrinsic threshold current density has been estimated to be about 2 kA/cm2 when taking current spreading and lateral diffusion effects into account. Low dislocation density shows that MEMBE can be a useful method to grow high quality GaAs and AlGaAs/GaAs layers on Si substrates by combining with MOCVD.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Multiwavelength cw laser oscillation in a Nd3+ and Er3+ doubly doped fiber laser

Yasuo Kimura and Masataka Nakazawa

Appl. Phys. Lett. 53, 1251 (1988); http://dx.doi.org/10.1063/1.100444 (3 pages) | Cited 3 times

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Nd3+ and Er3+ ions are doubly doped in the core part of a single‐mode silica fiber. By end‐pumping with an Ar ion laser at 514 nm, multiwavelength laser oscillations at 0.908, 0.932, 1.08, and 1.552 μm have been successfully achieved in the 1.5‐m‐long fiber with an adsorbed pump power of 70 mW.
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42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.By Design of specific laser systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.45.+h Stimulated emission

High repetition rate operation of a photoinitiated impulse‐enhanced electrically excited CO2 laser discharge using a burst‐mode technique

S. K. Nikumb, H. J. J. Seguin, V. A. Seguin, and D. Presakarchuk

Appl. Phys. Lett. 53, 1254 (1988); http://dx.doi.org/10.1063/1.99993 (3 pages) | Cited 2 times

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The incorporation of a gating signal into the trigger circuit of a photoinitiated, impulse‐enhanced, electrically excited (PIE) laser system has permitted high‐power, pulsed operation of a normally cw CO2 discharge. The 40 liter gain medium has been run at repetition rates approaching 1 kHz utilizing this approach. Plasma uniformity and stability have been significantly enhanced, such that a factor of two increase in electrical power deposition into the excited volume has been achieved. Results suggest that pulsed performance considerably in excess of that achievable under cw operating conditions can be realized through the adoption of this simple modification to the PIE ionization process.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

1.3 μm InGaAsP buried crescent lasers with cobalt‐doped semi‐insulating current blocking layers grown by metalorganic chemical vapor deposition

W. H. Cheng, J. Pooladdej, S. Y. Huang, K. D. Buehring, A. Appelbaum, D. Wolf, D. Renner, K. L. Hess, and S. W. Zehr

Appl. Phys. Lett. 53, 1257 (1988); http://dx.doi.org/10.1063/1.99994 (3 pages) | Cited 2 times

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Cobalt‐doped semi‐insulating InP layers grown by low‐pressure metalorganic chemical vapor deposition (LPMOCVD) have been used for the first time as a current blocking layer for 1.3 μm InGaAsP buried crescent lasers. Lasers with this cobalt‐doped InP blocking layer have cw threshold currents as low as 8 mA at room temperature. This is the lowest cw threshold current yet reported for an InGaAsP laser with a semi‐insulating current blocking layer. In addition, the lasers exhibit total differential quantum efficiency of 60%, high‐temperature operation up to 100 °C, high output power of 30 mW/facet, and a 3‐dB modulation bandwidth of 11.6 GHz. These results indicate that the cobalt‐doped semi‐insulating InP layer grown by LPMOCVD provides effective current blocking for high‐performance lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.60.By Design of specific laser systems

InGaAsP/InP buried‐heterostructure lasers with concurrent fabrication of the stripes and mirrors

D. Yap, J. N. Walpole, and Z. L. Liau

Appl. Phys. Lett. 53, 1260 (1988); http://dx.doi.org/10.1063/1.99995 (3 pages) | Cited 3 times

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Concurrent fabrication of InGaAsP/InP buried‐heterostructure laser stripes and mirrors has been demonstrated by the use of dry etching and mass transport. In comparison to previous processes in which the laser stripes and mirrors are fabricated separately, this process offers the advantages of simplicity, built‐in alignment, and improved control of device dimensions. Lasers with a cylindrical and a flat end mirror have threshold currents as low as 22 mA and differential quantum efficiencies as high as 24% per facet. Beam divergences as narrow as 13° are obtained for the cylindrical mirrors.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Mv Dye lasers

Effects of low‐frequency modulation on rf discharge chemical vapor deposition

Y. Watanabe, M. Shiratani, Y. Kubo, I. Ogawa, and S. Ogi

Appl. Phys. Lett. 53, 1263 (1988); http://dx.doi.org/10.1063/1.100445 (3 pages) | Cited 95 times

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Low‐frequency square‐wave modulation of a rf discharge in silane diluted with a rare gas brought about an improvement in the deposition rate of amorphous hydrogenated silicon films and in the film quality as well as a drastic suppression of powder concentration in the discharge space. These results can be explained by a SiH3 density in the modulated discharge that is high compared to that without modulation, because of the electron density enhancement resulting from the modulation and also because the lifetime of SiH3 radicals is much longer than those of SiHn radicals (n=0–2).
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52.80.Pi High-frequency and RF discharges
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Relativistic focusing and beat wave phase velocity control in the plasma beat wave accelerator

E. Esarey, A. Ting, and P. Sprangle

Appl. Phys. Lett. 53, 1266 (1988); http://dx.doi.org/10.1063/1.99996 (3 pages) | Cited 51 times

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Relativistic focusing allows two collinear short pulse radiation beams, provided they are of sufficiently high power, to propagate through a plasma without diffracting. By further accounting for finite radial beam geometry, it is possible for the phase velocity of the radiation beat (ponderomotive) wave to equal to the speed of light. This removes one of the limiting factors, phase detuning between the accelerated electrons and the beat wave, in determining the maximum energy gain in the plasma beat wave accelerator.
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52.40.Mj Particle beam interactions in plasmas
52.75.Di Ion and plasma propulsion
52.38.-r Laser-plasma interactions
52.35.Mw Nonlinear phenomena: waves, wave propagation, and other interactions (including parametric effects, mode coupling, ponderomotive effects, etc.)

Titanium diffusion in silicon

S. Hocine and D. Mathiot

Appl. Phys. Lett. 53, 1269 (1988); http://dx.doi.org/10.1063/1.100446 (3 pages) | Cited 33 times

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Titanium diffusion profiles in silicon were determined in the 950–1200 °C temperature range, with experimental conditions avoiding any oxygen or nitrogen contamination, which could perturb the boundary condition at the TiSi2/Si interface. Thus diffusivity values in the range 5×10−10–10−8 cm2 s−1 are obtained, and are about two orders of magnitude higher than previously reported.
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66.30.J- Diffusion of impurities
61.72.S- Impurities in crystals

Metallic behavior of lanthanum disilicide

Robert G. Long, M. C. Bost, and John E. Mahan

Appl. Phys. Lett. 53, 1272 (1988); http://dx.doi.org/10.1063/1.100447 (2 pages) | Cited 2 times

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Polycrystalline thin films of LaSi2 were prepared by reaction of sputter‐deposited lanthanum layers with silicon wafers. Samples of the low‐temperature tetragonal and the high‐temperature orthorhombic phases were separately obtained. The room‐temperature intrinsic resistivities were 24 and 57 μΩ cm for the low‐ and high‐temperature structures, respectively. Although lanthanum disilicide had been previously reported to be a semiconductor, we find classical metallic behavior for both phases.
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73.61.At Metal and metallic alloys
81.15.Cd Deposition by sputtering
73.50.Lw Thermoelectric effects
78.66.Bz Metals and metallic alloys

Switching and memory phenomena in Langmuir–Blodgett films

K. Sakai, H. Matsuda, H. Kawada, K. Eguchi, and T. Nakagiri

Appl. Phys. Lett. 53, 1274 (1988); http://dx.doi.org/10.1063/1.100449 (3 pages) | Cited 34 times

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Reproducible memory switching has been observed in metal/ Langmuir–Blodgett (LB) film/metal sandwich structures: LB films consist of organic molecules such as dyes having a number of conjugated bonds. The device switches from a nonconducting off state to a conducting on state via an intermediate state, and it switches directly from the on to the off state within less than 10 ns upon the application of a voltage. Both off‐state and on‐state resistances of the device depend linearly on the number of monolayers, the conduction being predominantly through the LB films.
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73.40.Rw Metal-insulator-metal structures
73.61.Ng Insulators

Elimination of light‐induced effect in hydrogenated amorphous silicon

Yang‐Fang Chen

Appl. Phys. Lett. 53, 1277 (1988); http://dx.doi.org/10.1063/1.100404 (2 pages) | Cited 2 times

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Light‐induced metastable defects in hydrogenated amorphous silicon can be eliminated by atomic hydrogen at the temperature below which the annealing effect occurs. The resulting material has a very high photosensitivity and stability.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
72.40.+w Photoconduction and photovoltaic effects
72.80.Ng Disordered solids

Diluted magnetic semiconductor (Cd1−xMnxTe) Schottky diodes and field‐effect transistors

D. L. Dreifus, R. M. Kolbas, R. L. Harper, J. R. Tassitino, S. Hwang, and J. F. Schetzina

Appl. Phys. Lett. 53, 1279 (1988); http://dx.doi.org/10.1063/1.99997 (3 pages) | Cited 10 times

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We report the first demonstration of electronic devices, Schottky diodes, and metal‐semiconductor field‐effect transistors, in a diluted magnetic semiconductor Cd1−xMnxTe. These devices were fabricated using n‐type, indium‐doped CdMnTe films grown by photoassisted molecular beam epitaxy on (100) CdTe and CdZnTe substrates. Epitaxial layers with carrier concentrations of 1×1017 cm−3 and electron mobilities as large as 720 cm2/V s at 120 K were used. The Schottky diodes have turn‐on voltages of 0.8 V, idealities in the range between 1.27 and 1.7, and reverse breakdown voltages from 5.5 to 10.5 V reverse bias. The 100 μm gate length transistors have transconductances of 1 mS/mm.
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72.80.Ey III-V and II-VI semiconductors
73.30.+y Surface double layers, Schottky barriers, and work functions
75.80.+q Magnetomechanical effects, magnetostriction

Damage nucleation and annealing in MeV ion‐implanted Si

O. W. Holland, M. K. El‐Ghor, and C. W. White

Appl. Phys. Lett. 53, 1282 (1988); http://dx.doi.org/10.1063/1.99998 (3 pages) | Cited 38 times

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The damage produced in Si by high‐energy MeV ions and its low‐temperature annealing behavior are discussed. The damage morphology clearly shows that there are distinct regions in which different damage nucleation and growth mechanisms are dominant. A model is proposed to account for the observations. Both electron microscopy and Rutherford backscattering were used to characterize the damage distributions, while the annealing behavior of the damage helped in identifying some of the defects.
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61.80.Jh Ion radiation effects
61.72.Bb Theories and models of crystal defects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.72.J- Point defects and defect clusters

Shallow donors in very pure GaAs grown by gas source molecular beam epitaxy

J. E. Cunningham, T. H. Chiu, G. Timp, E. Agyekum, and W. T. Tsang

Appl. Phys. Lett. 53, 1285 (1988); http://dx.doi.org/10.1063/1.99999 (3 pages) | Cited 13 times

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We report photoluminescence and transport studies of a very pure GaAs layer grown by gas source molecular beam epitaxy methods. A peak mobility of 300 000 cm2/V s is observed at 60 K. A very shallow donor with binding energy less than 2 meV is observed.
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71.55.Eq III-V semiconductors
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.55.Cr III-V semiconductors
73.61.Ng Insulators

Growth of highly strained InGaAs on GaAs

G. L. Price

Appl. Phys. Lett. 53, 1288 (1988); http://dx.doi.org/10.1063/1.100000 (3 pages) | Cited 43 times

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The early stages of the molecular beam epitaxial growth of InxGa1−xAs on GaAs have been studied with reflection high‐energy electron diffraction. Measurement of the in‐plane surface lattice constant as a function of film thickness clearly showed a pseudomorphic to incoherent transition. Changes in the diffraction streaks indicated a corresponding two‐ to three‐dimensional growth transition. The results are compared with various models of dislocation nucleation and good support is found for heterogeneous misfit accommodation by 60° dislocations.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Md Surface thermodynamics, surface energies
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

Surface reactions of silane with oxidized InP and their application to the improvement of chemical vapor deposition grown, InP‐based metal‐insulator‐semiconductor devices

C. Licoppe, J. M. Moison, Y. I. Nissim, J. L. Regolini, and D. Bensahel

Appl. Phys. Lett. 53, 1291 (1988); http://dx.doi.org/10.1063/1.100426 (3 pages) | Cited 9 times

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The first stage of chemical vapor deposition of SiO2 from SiH4 and O2 on InP has been investigated. SiH4 is shown to interact only with an oxidized InP surface. It plays the part of an interface deoxidizing agent, restoring the covalent bonding of surface InP atoms. Oxygen originally bonded to InP becomes bonded to the silicon deposit in silica‐like bonds. This phenomenon has been used as an in situ surface cleaning step in the processing of metal‐insulator‐semiconductor InP structures. It leads to a strong decrease of the hysteresis in capacitance‐voltage curves, demonstrating improvement of the interface properties.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.Ja Surface and interface dynamics and vibrations

Strained‐layer Ga1−xInxAs/InP avalanche photodetectors

D. Gershoni, H. Temkin, and M. B. Panish

Appl. Phys. Lett. 53, 1294 (1988); http://dx.doi.org/10.1063/1.100001 (3 pages) | Cited 12 times

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We have investigated the electrical and optical properties of avalanche photodiodes with the absorption region formed by Ga1−x InxAs/InP strained‐layer superlattices. High quality structures with the In concentration x as high as 1 have been grown by gas source molecular beam epitaxy. We have extended the photodiode response to approximately 2 μm and obtained avalanche gain of 16. The spectral range accessible with these strained‐layer devices is carefully modeled.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Pz Photoconduction and photovoltaic effects

Semiconductor waveguide phase comparator

S. C. Lin, M. K. Chin, X. L. Jing, L. M. Walpita, P. K. L. Yu, W. S. C. Chang, and S. C. Wang

Appl. Phys. Lett. 53, 1297 (1988); http://dx.doi.org/10.1063/1.100002 (2 pages)

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A phase comparator based on two cascaded semiconductor electroabsorption waveguide modulators is demonstrated for the first time. The operation principle of this device is derived and experimentally confirmed.
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42.79.Hp Optical processors, correlators, and modulators
42.79.Gn Optical waveguides and couplers
78.20.Jq Electro-optical effects
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