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3 Oct 1988

Volume 53, Issue 14, pp. 1227-1349

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Spin‐dependent pair generation at Si/SiO2 interfaces

R. L. Vranch, B. Henderson, and M. Pepper

Appl. Phys. Lett. 53, 1299 (1988); http://dx.doi.org/10.1063/1.100450 (3 pages) | Cited 3 times

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We report spin‐dependent generation of electron‐hole pairs at the Si/SiO2 interface detected via microwave‐induced changes in the recombination current through a gate‐controlled diode.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
76.30.Da Ions and impurities: general

Depth profiles on ion implantation induced vacancy‐type defects in GaAs and Si observed by slow positron

Jong‐Lam Lee, Jin Sup Kim, Hyung Moo Park, Dong Sung Ma, S. Tanigawa, and A. Uedono

Appl. Phys. Lett. 53, 1302 (1988); http://dx.doi.org/10.1063/1.100003 (3 pages) | Cited 12 times

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Monoenergetic positrons with variable energies were used to study the depth distribution of implantation‐induced vacancy‐type defects in undoped GaAs and p‐type Si. In the Si+‐implanted GaAs, the concentration of vacancy‐type defects decreased monotonically with increasing depth below the surface. In B+‐ and As+‐implanted Si substrates, parabolic‐type distributions of vacancy‐type defects were observed. The present work demonstrates that the monoenergetic positron technique is a very powerful tool for the study of vacancy‐type defects near surfaces in semiconductor processes.
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61.72.U- Doping and impurity implantation
61.72.uf Ge and Si
61.80.Jh Ion radiation effects

Exact analysis of an idealized model for calculating the photoresponse of a preferentially doped polycrystalline solar cell

S. Elnahwy and N. Adeeb

Appl. Phys. Lett. 53, 1305 (1988); http://dx.doi.org/10.1063/1.100004 (3 pages) | Cited 1 time

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Analytical expressions are derived for the photoresponse of a simplified model for a preferentially doped polycrystalline solar cell. The expressions are used to investigate the dependence of the photoresponse and the total short circuit current on the depth of preferential doping for different grain sizes.
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84.60.Jt Photoelectric conversion
85.30.De Semiconductor-device characterization, design, and modeling
72.40.+w Photoconduction and photovoltaic effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Improved photoluminescence of GaAs in ZnSe/GaAs heterojunctions grown by organometallic epitaxy

S. K. Ghandhi, S. Tyagi, and R. Venkatasubramanian

Appl. Phys. Lett. 53, 1308 (1988); http://dx.doi.org/10.1063/1.100005 (3 pages) | Cited 8 times

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Zinc selenide layers, grown by organometallic vapor phase epitaxy on gallium arsenide, are shown to improve the photoluminescence intensity of the gallium arsenide. The improvement in the room‐temperature photoluminescence intensity is found to be as high as 190, for n‐type GaAs covered with an 1100 Å ZnSe layer. An improvement of 145 was observed for p‐type GaAs covered by a ZnSe layer of the same thickness. No such improvement is seen for ZnSe thicknesses exceeding 1500 Å, the calculated critical thickness for this heterojunction. The effective recombination velocity is estimated to be approximately 1×103 cm/s for the GaAs‐ZnSe interface, with thin ZnSe layers. Different epitaxial structures were used to check the consistency of the calculations, and the results match reasonably well. Our findings suggest that the behavior of the ZnSe/GaAs heterojunction is similar to the AlGaAs/GaAs heterojunction. This presents the possibility of its use in GaAs device, where it should offer some advantages over the existing structures using AlGaAs.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.80.Ey III-V and II-VI semiconductors
73.61.Ey III-V semiconductors
78.55.Cr III-V semiconductors

Simple, very low dark current, planar long‐wavelength avalanche photodiode

Y. Liu, S. R. Forrest, V. S. Ban, K. M. Woodruff, J. Colosi, G. C. Erikson, M. J. Lange, and G. H. Olsen

Appl. Phys. Lett. 53, 1311 (1988); http://dx.doi.org/10.1063/1.100006 (3 pages) | Cited 5 times

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We have demonstrated a novel planar, avalanche photodiode (APD) for use in long‐wavelength (0.95–1.65 μm) optical communication systems. The device is a separate absorption and multiplication region APD utilizing p+ guard rings which are concentric with, but not attached to the central diffused p+‐n junction region. Since no contact is made to the rings, their potential is allowed to ‘‘float’’ at a value somewhat less than that established by the externally applied voltage. The APD, which is fabricated in a manner identical to simple p‐i‐n photodiodes, eliminates edge breakdown effects while greatly reducing the electric field at the insulator/semiconductor interface. A 60‐μm‐diam junction device grown by vapor phase epitaxy is observed to have a primary dark current of <300 pA, and a capacitance of 290 fF at 90% of the breakdown voltage. Uniform gains as high as 11 have been observed.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.60.Gz Photodetectors (including infrared and CCD detectors)
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Windowless helium lamp assisted chemical vapor deposition of hydrogenated amorphous silicon

H. Zarnani, Z. Q. Yu, G. J. Collins, E. Bhattacharya, and J. I. Pankove

Appl. Phys. Lett. 53, 1314 (1988); http://dx.doi.org/10.1063/1.100007 (3 pages) | Cited 4 times

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A windowless helium lamp is employed to assist chemical vapor deposition of hydrogenated amorphous silicon from disilane feedstock gas at a film growth rate greater than 200 Å/min. Material properties in this preliminary study are comparable to the best hydrogenated amorphous silicon (a‐Si:H) films produced by conventional bulk plasma CVD techniques. The amount of photoconductivity degradation under long‐time illumination is more than plasma‐deposited a‐Si‐H thin films. Photoconductivity as high as σp =4×10−4 (Ω cm)−1 has been obtained.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
42.72.-g Optical sources and standards
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.40.Hp Lithography, masks and pattern transfer

Controlled carbon doping of GaAs by metalorganic vapor phase epitaxy

T. F. Kuech, M. A. Tischler, P.‐J. Wang, G. Scilla, R. Potemski, and F. Cardone

Appl. Phys. Lett. 53, 1317 (1988); http://dx.doi.org/10.1063/1.100008 (3 pages) | Cited 95 times

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The controlled incorporation of carbon has been demonstrated for the metalorganic vapor phase epitaxy of GaAs. Carbon levels between 1016 and 1019 cm−3 can be achieved under typical growth conditions by using Ga(CH3)3 and either As(CH3)3 or mixtures of As(CH3)3 and AsH3. The carbon incorporation into GaAs goes through a minimum with growth temperature at ∼650 °C when using Ga(CH3)3 and As(CH3)3. The controlled addition of AsH3 monotonically decreases the carbon incorporation. The high carbon levels (≳1–2×1019 cm−3), greater than the reported solid solubility, are thermally stable with a low diffusion coefficient. The GaAs:C layers exhibit a low deep level concentration, ∼1013 cm−3, with only a single midgap trap present.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
71.55.Eq III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
61.72.U- Doping and impurity implantation

Deposition of iron oxide thin films by pulsed laser evaporation

S. B. Ogale, V. N. Koinkar, Sushama Joshi, V. P. Godbole, S. K. Date, A. Mitra, T. Venkatesan, and X. D. Wu

Appl. Phys. Lett. 53, 1320 (1988); http://dx.doi.org/10.1063/1.100427 (3 pages) | Cited 14 times

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Iron oxide films have been deposited on alumina substrates by pulsed ruby laser evaporation from a bulk α‐Fe2O3 pellet. The films have been characterized by using the techniques of conversion electron Mössbauer spectroscopy, Rutherford backscattering, and scanning electron microscopy. It is demonstrated that the stoichiometry of the deposited film can be varied between FeO and Fe3O4 by controlling the oxygen partial pressure during deposition over a range from 5×10−7 to 10−4 Torr. It is further shown that the Fe3O4 film can be converted into γ‐Fe2O3 by suitable thermal annealing treatment.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Unified model for impurity diffusion in silicon

M. Orlowski

Appl. Phys. Lett. 53, 1323 (1988); http://dx.doi.org/10.1063/1.99975 (3 pages) | Cited 44 times

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A new theoretical framework for impurity diffusion in silicon is proposed. The basic mechanism employed here is the point defect‐impurity pair diffusion as presented by Mulvaney and Richardson [Appl. Phys. Lett. 51, 1439 (1987)] in a generalized description of the impurity‐interstitial model by Morehead and Lever [Appl. Phys. Lett. 48, 151 (1986)]. The model consists of coupled equations for the impurities and point defects, in which all species including structural defects (major new process variables) are treated on the same footing. Among other things, the model accounts for long‐range point defect mediated enhancement and retardation of the diffusion. The essential features of the present formalism are the new equations for interstitials and vacancies which provide the major coupling between the impurities apart from the coupling via the Fermi level. This approach allows, for the first time, a consistent analysis and exploration of the diffusion phenomena step by step on various levels of complexity.
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66.30.J- Diffusion of impurities
61.72.Bb Theories and models of crystal defects
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.Yx Interaction between different crystal defects; gettering effect

Electron irradiation induced amorphization in YBa2Cu3O7 and GdBa2Cu3O7 superconductors

M. Nastasi, Don M. Parkin, T. G. Zocco, J. Koike, and P. R. Okamoto

Appl. Phys. Lett. 53, 1326 (1988); http://dx.doi.org/10.1063/1.100451 (3 pages) | Cited 15 times

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Transmission electron microscope specimens of the oxide superconductors YBa2Cu3O7 and GdBa2Cu3O7 have been irradiated at 35 K with 1 MeV electrons and doses up to 1.5×1023 e/cm2. Electron diffraction data show the two different superconductors do not respond similarly with GdBa2Cu3O7 being more resistant to amorphization than YBa2Cu3O7. Amorphization appears to be dependent on displacements occurring at the Y/Gd lattice site. In addition, it appears that within each material, the electron dose required to initiate amorphization is lower for grain boundary irradiations relative to large single grain irradiations.
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61.80.Fe Electron and positron radiation effects
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
61.43.Fs Glasses
61.43.-j Disordered solids
74.70.-b Superconducting materials other than cuprates

Properties of Pb‐doped Bi‐Sr‐Ca‐Cu‐O superconductors

K. Togano, H. Kumakura, H. Maeda, E. Yanagisawa, and K. Takahashi

Appl. Phys. Lett. 53, 1329 (1988); http://dx.doi.org/10.1063/1.100452 (3 pages) | Cited 28 times

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A zero resistance transition temperature of 108 K has been achieved for Pb‐doped Bi‐Sr‐Ca‐Cu‐O superconductors prepared by conventional powder solid‐state reaction. The materials contained both the high Tc phase (Bi2Sr2Ca2Cu3Ox) and the low Tc phase (Bi2Sr2Ca1Cu2Ox). Critical current density at 100 K in a zero magnetic field was 3.5 A/cm2 which was larger than that of the Pb‐free sample.
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74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.70.-b Superconducting materials other than cuprates
74.10.+v Occurrence, potential candidates

Optical response of epitaxial films of YBa2Cu3O7−δ

M. G. Forrester, M. Gottlieb, J. R. Gavaler, and A. I. Braginski

Appl. Phys. Lett. 53, 1332 (1988); http://dx.doi.org/10.1063/1.100453 (3 pages) | Cited 45 times

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We present the results of measurements of optical detection in epitaxial films of YBa2Cu3O7−δ, at wavelengths of 0.63 and 10.6 μm. In contrast to the behavior observed in granular materials, these films appear to show no evidence of nonequilibrium response (breaking of Cooper pairs by photons), but only a bolometric effect (heating of the sample by radiation) in the resistive transition regime. This suggests that epitaxial films do not contain intrinsic links weak enough to be modulated by the incident radiation. For 0.63 μm radiation, mechanically chopped at 725 Hz, measurements of a 10 μm ×90 μm bridge yield a bolometric responsivity of approximately 4×103 V/W, and a detectivity D∗ of more than 108 cm Hz1/2/W.
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74.25.N- Response to electromagnetic fields
74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures
85.60.Gz Photodetectors (including infrared and CCD detectors)

Selective laser pyrolysis of metalorganics as a method of forming patterned thin‐film superconductors

J. V. Mantese, A. B. Catalan, A. M. Mance, A. H. Hamdi, A. L. Micheli, J. A. Sell, and M. S. Meyer

Appl. Phys. Lett. 53, 1335 (1988); http://dx.doi.org/10.1063/1.100454 (3 pages) | Cited 12 times

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Fine line superconductors of Y‐Ba‐Cu‐O were formed on 〈100〉 SrTiO3 by the completely nonvacuum techniques of metalorganic deposition and selective laser pyrolysis. Lines 35 μm wide were written, using an Ar laser, in metal neodecanoates prior to pyrolysis. Regions of the metalorganics not exposed to laser pyrolysis were developed away using a xylene wash. Complete pyrolysis of the metal neodecanoates and rapid thermal annealing produced lines having superconducting onsets above 90 K and zero resistance at 69 K.
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85.40.Hp Lithography, masks and pattern transfer
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
74.78.-w Superconducting films and low-dimensional structures
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)

Temperature and field dependence of the critical current densities of Y‐Ba‐Cu‐O films

L. H. Allen, P. R. Broussard, J. H. Claassen, and S. A. Wolf

Appl. Phys. Lett. 53, 1338 (1988); http://dx.doi.org/10.1063/1.100429 (3 pages) | Cited 17 times

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We have prepared thin films of Y1Ba2Cu3O7−x using a coevaporation technique and measured their critical current densities as a function of both temperature and field using a transport technique. For a stoichiometric composition we find that Jc at 4.2 K in zero field is 1.04×106 A/cm2 and does not drop below 105 A/cm2 until T>60 K. Fitting the data near Tc shows that Jc follows a power law of (1−t), with t being the reduced temperature. In an applied field perpendicular to the film’s surface, Jc also drops slowly, and up to 90 kOe Jc>105 A/cm2 for T=4.2 K. Measurements for an off‐stoichiometric film, Y1Ba3Cu2O7−x, give lower Jc values that fall off faster in temperature than for stoichiometric compositions.
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74.25.N- Response to electromagnetic fields
74.25.Sv Critical currents
74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures

Superconducting glass‐ceramic rods in BiCaSrCu2Ox prepared by crystallization under a temperature gradient

Yoshihiro Abe, Hideo Hosono, Masahiro Hosoe, Jiro Iwase, and Yukio Kubo

Appl. Phys. Lett. 53, 1341 (1988); http://dx.doi.org/10.1063/1.100428 (2 pages) | Cited 31 times

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Superconducting BiCaSrCu2Ox glass rods and coils were successfully prepared by pumping up the melt at 1150 °C into SiO2 or Pyrex glass tubes. After the outer glass tubes were removed, the resultant glass rods up to 30 cm long were crystallized under a temperature gradient of 30 °C/mm without deforming and cracking. The Tc (onset) and Tc (zero) of the resulting glass‐ceramic rods were ∼80 and 62 K, respectively.
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74.70.-b Superconducting materials other than cuprates
81.05.Kf Glasses (including metallic glasses)
81.05.Pj Glass-based composites, vitroceramics

Weakly coupled grain model of high‐frequency losses in high Tc superconducting thin films

T. L. Hylton, A. Kapitulnik, M. R. Beasley, John P. Carini, L. Drabeck, and George Grüner

Appl. Phys. Lett. 53, 1343 (1988); http://dx.doi.org/10.1063/1.99976 (3 pages) | Cited 128 times

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We propose a model of Josephson coupling between grains to explain the millimeter‐wave surface impedance of oriented, polycrystalline thin films of high Tc superconductors. An effective junction IcR product and effective grain size are calculated based on recent measurements of the surface impedance. We suggest a criterion on film quality for the observation of losses intrinsic in the superconductor. The effects of crystalline orientation on surface impedance are considered.
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74.50.+r Tunneling phenomena; Josephson effects
74.20.De Phenomenological theories (two-fluid, Ginzburg-Landau, etc.)
74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates

Effect of ion mixing on the depth resolution of sputter depth profiling

Yang‐Tse Cheng, Audrey A. Dow, and Bruce M. Clemens

Appl. Phys. Lett. 53, 1346 (1988); http://dx.doi.org/10.1063/1.99977 (3 pages) | Cited 7 times

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The effect of ion mixing on the depth resolution of sputter depth profiling has been studied using x‐ray photoelectron spectroscopy and Ar+ sputtering of Pt/Zr, Pt/Mo, Pt/Ti, and Pt/Ni interfaces. It is shown that the heat of mixing of binary alloys plays an important role in depth resolution. The measured interface width of bilayers consisting of metals with a large and negative heat of mixing (Pt/Zr and Pt/Ti) is significantly broader than that of metals with a nearly zero heat of mixing (Pt/Mo and Pt/Ni). This observation suggests that the mechanism of ion mixing during sputter depth profiling with ion energies of a few keV is the same as ion mixing with ion energies of several hundred keV; diffusion in thermal spikes is the dominant contribution to ion mixing in the systems investigated.
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79.20.Kz Other electron-impact emission phenomena
68.35.Fx Diffusion; interface formation
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
61.80.Jh Ion radiation effects
FREE

Erratum: Systematics of thin films formed by excimer laser ablation: Results on SmBa2Cu3O7 [Appl. Phys. Lett. 53, 703 (1988)]

R. A. Neifeld, S. Gunapala, G. Liang, S. A. Shaheen, M. Croft, J. Price, D. Simons, and W. T. Hill

Appl. Phys. Lett. 53, 1349 (1988); http://dx.doi.org/10.1063/1.100423 (1 page)

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Abstract Unavailable
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74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
99.10.Cd Errata
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