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17 Oct 1988

Volume 53, Issue 16, pp. 1459-1568

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Low threshold buried‐heterostructure quantum well lasers by excimer laser assisted disordering

J. E. Epler, R. L. Thornton, W. J. Mosby, and T. L. Paoli

Appl. Phys. Lett. 53, 1459 (1988); http://dx.doi.org/10.1063/1.99966 (3 pages) | Cited 2 times

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Laser assisted disordering based upon a direct‐write Ar+ laser beam has been established as a fabrication technique for high quality optoelectronic devices. In this letter, we report a new form of laser assisted disordering in which an excimer laser beam, photolithographically patterned, is used to define the incorporation of Si impurity into GaAs‐AlGaAs heterostructure crystals. During a subsequent thermal anneal the diffusing Si induces layer disordering to a depth of ∼1 μm. The excimer laser assisted disordering process is characterized as a function of the energy density of the laser beam. Also, this technique is used to fabricate high quality buried‐heterostructure lasers. With a reflective rear facet, the typical cw threshold current is 4 mA and the maximum power output is 27 mW. The devices exhibit single fundamental mode operation with subsidiary longitudinal side modes suppressed by 34 dB.
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68.35.Dv Composition, segregation; defects and impurities
42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

InGaAs/InAlAs bistable multiple quantum well lasers with large on/off ratio using the resonant tunneling effect

Y. Kawamura, K. Wakita, and O. Mikami

Appl. Phys. Lett. 53, 1462 (1988); http://dx.doi.org/10.1063/1.99967 (3 pages) | Cited 8 times

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Bistable operation with a large on/off ratio of 800:1 is achieved in InGaAs/InAlAs multiple quantum well (MQW) lasers using the resonant tunneling effect at 77 K. Structural dependence of resonant tunneling characteristic in the MQW structures reveals that the threshold current density, at which negative differential resistance appears, increases drastically when the InAlAs barrier width of MQW structures decreases. The increase in the threshold current density has led to an improvement in the bistable characteristics of InGaAs/InAlAs MQW lasers.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
73.40.Gk Tunneling

Photorefractive properties of Ce‐ and Ca‐doped Sr0.6Ba0.4Nb2O6

George A. Rakuljic, Koichi Sayano, Aharon Agranat, Amnon Yariv, and Ratnakar R. Neurgaonkar

Appl. Phys. Lett. 53, 1465 (1988); http://dx.doi.org/10.1063/1.100462 (3 pages) | Cited 12 times

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We present the results of experimental study of the absorption coefficient, two‐beam photorefractive coupling constant, and photorefractive response time of a doubly Ce‐ and Ca‐doped Sr0.6Ba0.4Nb2O6. This crystal displays enhanced photorefractive response at near infrared wavelengths when compared to Ce‐doped SBN:60. The temperature dependence of the coupling constant over the range from −30 to 40 °C has also been studied.
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78.20.Jq Electro-optical effects
42.70.-a Optical materials
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.79.Vb Optical storage systems, optical disks

Broad‐area tandem semiconductor laser

T. R. Chen, D. Mehuys, Y. H. Zhuang, M. Mittelstein, H. Wang, P. L. Derry, M. Kajanto, and A. Yariv

Appl. Phys. Lett. 53, 1468 (1988); http://dx.doi.org/10.1063/1.99968 (3 pages) | Cited 1 time

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A tandem combination of a uniform gain broad‐area semiconductor laser and a (lateral) periodic gain section displays a stable, near‐diffraction‐limited single‐lobed far‐field pattern. The GaAs/GaAlAs quantum well lasers display a high degree of coherence across 60‐μm‐wide apertures provided that the broad‐area section is sufficiently long.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Chemisorption‐induced reflectivity changes in optically thin silver films

M. A. Butler and A. J. Ricco

Appl. Phys. Lett. 53, 1471 (1988); http://dx.doi.org/10.1063/1.100464 (3 pages) | Cited 14 times

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The reflectivity of an optically thin metal film has been used to investigate its interactions with chemisorbed molecules. Reflectivity decreases for semitransparent, thin (50–250 Å) silver films vacuum evaporated on the end of multimode optical fibers were observed at 860 nm during chemisorption of various molecules. The magnitude of the decrease depends on the nature of the molecule/silver interaction. The dependence of this effect on film thickness is consistent with changes in the optical thickness as a result of chemisorption. This effect may lead to the development of new chemical sensors.
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78.66.Bz Metals and metallic alloys
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis

Elimination of residual signals and reduction of noise in a low‐frequency magnetic fiber sensor

Dominique M. Dagenais, Frank Bucholtz, and Kee P. Koo

Appl. Phys. Lett. 53, 1474 (1988); http://dx.doi.org/10.1063/1.99969 (3 pages) | Cited 5 times

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Low‐frequency sensitivities of interferometric magnetic fiber optic sensors have been limited by the presence of a large residual signal at the dither frequency which limits the dynamic range and upconverts low‐frequency noise into sideband noise around the carrier. We present an operating regime that enables us to eliminate residual signals associated with the ac carrier. By choosing the proper carrier frequency and amplitude we obtain a nulled residual signal, strong magnetomechanical coupling, and an increase in signal‐to‐noise ratio of approximately 13 dB over previously reported results. A minimum detectable field of 45 pT/(Hz)1/2 at 0.1 Hz is demonstrated.
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42.81.Pa Sensors, gyros
85.70.Sq Magnetooptical devices
85.70.Ec Magnetostrictive, magnetoacoustic, and magnetostatic devices
07.60.Ly Interferometers

Low‐frequency acoustic anomalies in lithium niobate Mach–Zehnder interferometers

R. L. Jungerman and C. A. Flory

Appl. Phys. Lett. 53, 1477 (1988); http://dx.doi.org/10.1063/1.99970 (3 pages) | Cited 5 times

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Anomalous variation in the frequency response of z‐cut and x‐cut Mach–Zehnder traveling‐wave optical modulators near 50 MHz has been observed. Measurements of loss in the coplanar electrode and coupling to an adjacent acoustic transducer indicate the effect is due to surface acoustic waves in the device. Application of an acoustic absorber reduces the frequency response variation.
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42.79.Hp Optical processors, correlators, and modulators
43.35.Pt Surface waves in solids and liquids
43.38.Rh Surface acoustic wave transducers
07.60.Ly Interferometers

Point source terahertz optics

Ch. Fattinger and D. Grischkowsky

Appl. Phys. Lett. 53, 1480 (1988); http://dx.doi.org/10.1063/1.99971 (3 pages) | Cited 72 times

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We demonstrate an ultrafast 10 μm sized, electric dipole source of terahertz radiation closely coupled to a 1 cm spherical mirror. This optical approach has the advantages of subpicosecond response times with essentially complete collection efficiency. Using this technique, we have generated and detected subpicosecond freely propagating electrical pulses.
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84.40.-x Radiowave and microwave (including millimeter wave) technology
42.25.Lc Birefringence
03.50.De Classical electromagnetism, Maxwell equations
07.50.-e Electrical and electronic instruments and components

Rib profile effects on scattering in semiconductor optical waveguides

R. J. Deri, R. J. Hawkins, and E. Kapon

Appl. Phys. Lett. 53, 1483 (1988); http://dx.doi.org/10.1063/1.99972 (3 pages) | Cited 9 times

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A novel method for studying the dependence of scattering loss on guide structure in integrated‐optic semiconductor rib waveguides is presented. The results provide a simple experimental test for determining the nature of the scattering loss. Differences in scattering due to changes in epilayer structure and ribwall slope are also investigated.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Universal relation between electron channeling line intensity and thickness of disordered layers on single crystals

Tadashi Suzuki and Yoshiaki Kido

Appl. Phys. Lett. 53, 1486 (1988); http://dx.doi.org/10.1063/1.99973 (3 pages) | Cited 4 times

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Electron channeling patterns (ECP’s) were measured for Si and GaAs single crystals with thin polycrystal films or ion‐damaged layers on the top surfaces. The intensity scans along channeling lines provide quantitative information on the above disordered layer thickness. We have derived a universal relation between the channeling line intensity and disordered layer thickness. This scaling law is independent of channeling planes and species of the single crystals and disordered layers.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.55.-a Thin film structure and morphology
61.80.Fe Electron and positron radiation effects

Independent control of spin density and hydrogen‐bonding configuration in glow‐discharge‐hydrogenated Si‐Ge alloys using a cathode‐heating method

A. Matsuda, S. Yokoyama, and K. Tanaka

Appl. Phys. Lett. 53, 1489 (1988); http://dx.doi.org/10.1063/1.99974 (3 pages) | Cited 5 times

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The number density of dangling bonds (spin density) and the hydrogen content as well as the hydrogen‐bonding configuration were independently controlled in the glow‐discharge hydrogenated amorphous Si‐Ge alloys using a cathode‐heating technique. A tentative mechanism is presented in terms of the top surface process as well as the growth zone.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.55.-a Thin film structure and morphology
73.50.Pz Photoconduction and photovoltaic effects

Si deposition by electron beam induced surface reaction

Shinji Matsui and Masanobu Mito

Appl. Phys. Lett. 53, 1492 (1988); http://dx.doi.org/10.1063/1.100465 (3 pages) | Cited 7 times

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Si deposition has been achieved by electron beam induced surface reaction. An initial growth process for Si deposition using SiH2Cl2 source gas has been observed in situ by Auger electron spectroscopy. As a result, it became clear that the Si deposition growth rate is ∼0.3 Å/min at 7×10−7 Torr and that the deposition film contents (at. %) are 89% Si, 9.1% O, and 1.9% Cl. Moreover, a 0.5 μm linewidth Si pattern has been demonstrated by direct writing, using electron beam induced surface reaction.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
79.20.Fv Electron impact: Auger emission

Gel behavior of keV ion irradiated polystyrene

L. Calcagno, G. Foti, A. Licciardello, and O. Puglisi

Appl. Phys. Lett. 53, 1495 (1988); http://dx.doi.org/10.1063/1.99939 (3 pages) | Cited 9 times

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Among the chemical and physical modifications induced by ion bombardment of polymers, the solubility changes are very important because of technological application for lithography in microelectronic devices. Solubility changes due to the occurrence of crosslinkings have been followed on monodisperse and polydisperse polystyrene after ion irradiations (1011–1014 ions/cm2, keV energy). By using the Inokuty gel theory [M. Inokuti J. Appl. Phys. 38, 2999 (1963)], the chemical yield (crosslinking/eV) has been determined for different molecular weights and molecular weight distributions.
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61.80.Jh Ion radiation effects
36.20.Cw Molecular weights, dispersity
85.40.Hp Lithography, masks and pattern transfer
82.70.Gg Gels and sols

Observation of complex domain walls in KTiOPO4

G. M. Loiacono and R. A. Stolzenberger

Appl. Phys. Lett. 53, 1498 (1988); http://dx.doi.org/10.1063/1.100466 (2 pages) | Cited 17 times

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Optical nonuniformities observed in second‐harmonic generation experiments on large KTiOPO4 crystals (dark line defects) are shown to be directly related to the presence of complex domain walls. It is unlikely that these domains are ferroelectric; however, their polar nature suggests they may be similar to the Dauphiné twins observed in quartz.
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61.72.Mm Grain and twin boundaries
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Interfacial reaction of BN/Ni3Al

T. C. Chou

Appl. Phys. Lett. 53, 1500 (1988); http://dx.doi.org/10.1063/1.100467 (3 pages) | Cited 2 times

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Interfacial reaction between BN and Ni3Al was studied by diffusion bonding at 1000 °C. Error function type diffusion profiles of Ni and Al were observed. Al enrichment at the interface was detected. Kirkendall voids [Trans. Am. Inst. Min. Eng. 171, 130 (1947)] with faceted interfaces were observed in the interdiffusion zone of Ni3Al side. In situ fractured interface showed a typical heterogeneous interfacial reaction. Three‐dimensional Ni clusters were observed to grow into islands, and unevenly distributed in an alumina matrix of whisker form. The intriguing pattern of the outdiffusion and clustering of Ni atoms, as compared to Al, during the chemical interdiffusion between BN and Ni3Al is discussed based upon grain boundary diffusion, diffusion environment, and thermodynamic driving force under oxygen environment.
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82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
68.35.B- Structure of clean surfaces (and surface reconstruction)

Noise reduction technique for scanning tunneling microscopy

David W. Abraham, C. C. Williams, and H. K. Wickramasinghe

Appl. Phys. Lett. 53, 1503 (1988); http://dx.doi.org/10.1063/1.99940 (3 pages) | Cited 23 times

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Noise stemming from mechanical vibration, electronic noise, or low frequency (1/f power spectrum) inherent in the tunneling process, often limits the resolution, speed, or range of application of scanning tunneling microscopy (STM). We demonstrate a technique for minimizing the effect of these noise sources on the STM image. In our method, the tunneling tip is vibrated parallel to the sample surface at a frequency f0, above that of the feedback response frequency. Two signals are obtained simultaneously: the conventional topography, and a differential image corresponding to the amplitude of current modulation at f0. The resultant ac signal can be simply related to the normal STM topographic image, with significant improvement in the signal‐to‐noise ratio.
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07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Epitaxial growth of yttria‐stabilized zirconia films on silicon by ultrahigh vacuum ion beam sputter deposition

P. Legagneux, G. Garry, D. Dieumegard, C. Schwebel, C. Pellet, G. Gautherin, and J. Siejka

Appl. Phys. Lett. 53, 1506 (1988); http://dx.doi.org/10.1063/1.100431 (3 pages) | Cited 26 times

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Yttria‐stabilized zirconia (YSZ) films have been grown on Si (100) substrates by ion sputter deposition using ultrahigh vacuum system with in situ diagnostic equipment. Epitaxial conditions of YSZ (100) films were achieved between 700 and 800 °C by using an oxygen partial pressure around 3×10−4 Pa during the deposition. The film stoichiometry was measured by Rutherford backscattering spectrometry and nuclear reaction analysis. Crystalline quality of the YSZ layers was determined by x‐ray diffraction, channeling of 4He+ ion beam, and in situ reflection high‐energy electron diffraction pattern.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
68.55.Nq Composition and phase identification

New approach to the atomic layer epitaxy of GaAs using a fast gas stream

M. Ozeki, K. Mochizuki, N. Ohtsuka, and K. Kodama

Appl. Phys. Lett. 53, 1509 (1988); http://dx.doi.org/10.1063/1.99941 (3 pages) | Cited 41 times

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A new growth method has been developed for the atomic layer epitaxy of GaAs. The gas system was based on a conventional metalorganic vapor phase epitaxial system but the decomposition of methylgallium was suppressed in the stagnant layer by using a fast pulsed gas stream from a jet nozzle. The method enabled us to grow high purity epitaxial layers with a clear self‐limiting mechanism even at 560 °C. The variations in the growth rate with respect to various growth parameters were explained by the rate equations based on the selective adsorption of methylgallium on surface As atoms. The decomposition rate of methylgallium on the surface had an activation energy of 42 kcal/mole from 440 to 560 °C.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Growth of lattice‐mismatched stacked epitaxial CaF2‐SrF2‐BaF2 layers on (100) oriented Si substrates

S. Blunier, H. Zogg, and H. Weibel

Appl. Phys. Lett. 53, 1512 (1988); http://dx.doi.org/10.1063/1.100432 (3 pages) | Cited 16 times

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(100) oriented BaF2 has been grown epitaxially onto Si(100) despite its large lattice mismatch of 14% and preferred (111) growth mode. (100) epitaxy was achieved using thin intermediate CaF2 and/or SrF2 buffers to overcome the mismatch in a stepwise manner. Growth is three dimensional, and a roughness of the top surface in the 10 nm range was obtained. Ion channeling minimum yields are below 4% even for layers as thin as 3000 Å. Thermal misfit strains relieve due to movement of misfit dislocations. The layers are intended for use as epitaxial buffers for growth of compound semiconductors on Si(100) substrates with up to 20% total lattice mismatch.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Precipitation of impurities in GaAs amorphized by ion implantation

W. G. Opyd, J. F. Gibbons, and A. J. Mardinly

Appl. Phys. Lett. 53, 1515 (1988); http://dx.doi.org/10.1063/1.99942 (3 pages) | Cited 6 times

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Impurities in a GaAs layer that had been amorphized by ion implantation were observed to precipitate upon annealing. Photoluminescence spectra indicated that the resulting high electrical resistivity could be attributed to the formation of neutral impurity complexes rather than a compensation mechanism. Impurities studied were implanted Si and Se. Transmission electron microscopy and x‐ray microanalysis were used to identify impurity precipitates and related stacking fault tetrahedra. These results correlate with similar examples of poor activation for impurities in GaAs grown by low‐temperature molecular beam epitaxy.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Np Solid phase epitaxy; growth from solid phases
61.80.Jh Ion radiation effects
66.30.J- Diffusion of impurities

Metal contacts to p‐type GaAs with large Schottky barrier heights

J. R. Waldrop

Appl. Phys. Lett. 53, 1518 (1988); http://dx.doi.org/10.1063/1.99943 (3 pages) | Cited 5 times

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Metal Schottky barrier contacts to p‐type (100) GaAs are described in which a large Schottky barrier height ϕB is attained by using a very thin Si or Ge interface layer to influence the interface Fermi energy EiF. The metals investigated are Au, Cr, Mn, Ni, and Al. Au, Cr, and Mn contacts have ϕB values from 0.7 to 0.9 eV when ∼15 Å Si and Ge interlayers are made heavily n type. Ni and Al contact ϕB values were limited to 0.6–0.7 eV. X‐ray photoemission spectroscopy was used to obtain the EiF and interface composition during contact formation; the ϕB for the corresponding thick contacts was measured by current‐voltage and capacitance‐voltage methods.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
73.40.Ei Rectification
68.35.B- Structure of clean surfaces (and surface reconstruction)

Detection of dilute iron impurities in CdTe

R. C. Bowman and Donald E. Cooper

Appl. Phys. Lett. 53, 1521 (1988); http://dx.doi.org/10.1063/1.99944 (3 pages) | Cited 3 times

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CdTe single crystals from several sources have been examined to detect the presence of impurities which may be detrimental to applications in the fabrication of IR detectors. Distinctive electron paramagnetic resonance (EPR) signals from several donor impurities, including substitutional paramagnetic Fe, were found in several samples. A photoluminescence (PL) transition at 1.1 eV was also seen in these crystals and the amplitudes of the PL signals and the Fe EPR signals are strongly correlated. Elemental analysis of the samples indicates that EPR and PL are able to detect Fe concentrations of less than 0.1 ppm.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
78.55.Et II-VI semiconductors
71.55.Gs II-VI semiconductors
76.30.Fc Iron group (3d) ions and impurities (Ti-Cu)

Annealing behavior of bound exciton lines in high quality CdTe

S. Seto, A. Tanaka, Y. Masa, S. Dairaku, and M. Kawashima

Appl. Phys. Lett. 53, 1524 (1988); http://dx.doi.org/10.1063/1.99945 (3 pages) | Cited 15 times

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Annealing behavior of shallow donor‐bound and acceptor‐bound exciton lines in CdTe crystals grown by the Bridgman method was investigated by high‐resoluton photoluminescence measurements at 4.2 K. The intensity of the neutral acceptor‐bound exciton line (A0X) at 1.5896 eV, which was commonly observed in p‐type CdTe, drastically decreased by annealing under Cd saturated atmosphere. By further subsequent annealing under Te saturated atmosphere, the A0X line recovered again. On the other hand, the intensity of the neutral donor‐bound exciton line increased by annealing under Cd saturated atmosphere and decreased by the further annealing under Te saturated atmosphere. It was found that this change in the photoluminescence lines by the annealing process was reversible. These results strongly suggest that the A0X line at 1.5896 eV can be ascribed to the recombination of excitons trapped at Cd‐vacancy/donor‐impurity complexes.
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71.55.Eq III-V semiconductors
78.55.Et II-VI semiconductors
71.35.-y Excitons and related phenomena
61.72.Bb Theories and models of crystal defects

Optical nonlinearities of excitons in CuCl microcrystals

Yasuaki Masumoto, Makoto Yamazaki, and Hideyuki Sugawara

Appl. Phys. Lett. 53, 1527 (1988); http://dx.doi.org/10.1063/1.99946 (3 pages) | Cited 45 times

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Nonlinear optical properties of excitons in CuCl microcrystals in NaCl host crystals were studied by the absorption saturation method. Prominent absorption saturation of excitons was observed together with a blue shift. Optical nonlinearity was found to increase with an increase in the size of the CuCl microcrystals. The observed nonlinearities are very large compared with those in bulk CuCl crystals and GaAs quantum wells.
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71.35.-y Excitons and related phenomena
81.40.Tv Optical and dielectric properties related to treatment conditions
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.-e Optical properties of bulk materials and thin films

Influence of metal interlayers on Schottky barrier formation for Au/ZnSe (100) and Al/ZnSe (100)

M. Vos, F. Xu, J. H. Weaver, and H. Cheng

Appl. Phys. Lett. 53, 1530 (1988); http://dx.doi.org/10.1063/1.99947 (3 pages) | Cited 10 times

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Schottky barrier formation for Al/ZnSe (100) and Au/ZnSe (100) was studied using photoelectron spectroscopy. The initial Fermi level position for sputter‐annealed ZnSe (100) surfaces was 2.05 eV above the valence‐band maximum (VBM). The final Fermi level position, established after the deposition of several monolayers of metal adatoms, was very different for Al (2.17 eV) and Au (1.25 eV, relative to the VBM). The deposition of Au interlayers for Al/Au/ZnSe and Al interlayers for Au/Al/ZnSe showed that it is possible to ‘‘tune’’ the Schottky barrier height between these extremes by choosing interlayers of definite thickness.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
73.20.At Surface states, band structure, electron density of states
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
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