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24 Oct 1988

Volume 53, Issue 17, pp. 1577-1667

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Gain characteristics of a 1.5 μm nonlinear split contact laser amplifier

I. W. Marshall, M. J. O’Mahony, D. M. Cooper, P. J. Fiddyment, J. C. Regnault, and W. J. Devlin

Appl. Phys. Lett. 53, 1577 (1988); http://dx.doi.org/10.1063/1.99954 (3 pages) | Cited 5 times

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The gain characteristics of a 1.5 μm split contact nonlinear laser amplifier are reported. With an input power of −51 dBm or greater, a nonlinear transfer function was observed with a maximum gain of 26 dB. The maximum pulse repetition frequency for nonlinear gain was 700 MHz.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Observation of a short optical pulse (<1.3 ps) from a gain‐switched quantum well laser

T. Sogawa, Y. Arakawa, M. Tanaka, and H. Sakaki

Appl. Phys. Lett. 53, 1580 (1988); http://dx.doi.org/10.1063/1.99955 (3 pages) | Cited 11 times

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Short light pulse generation from an optically pumped GaAs/AlGaAs quantum well laser is measured. The shortest pulse width achieved so far is less than 1.3 ps. In addition, it is found that the pulse from varies randomly even when the same excitation condition, which results from stochastic behavior of the spontaneous emission coupling to the lasing mode. In order to discuss these results in more detail, spatial dependent rate equations are analyzed in which the stochastic process of the spontaneous emission and the traveling effect of spontaneously generated optical wave packets are included.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Plasma x‐ray source for lithography generated by a ≊30 J, 30 ns KrF laser

G. M. Davis, M. C. Gower, F. O’Neill, and I. C. E. Turcu

Appl. Phys. Lett. 53, 1583 (1988); http://dx.doi.org/10.1063/1.99919 (3 pages) | Cited 20 times

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A plasma x‐ray source for lithography is generated by focusing ≊30 J, 30 ns KrF laser pulses onto Cu targets at irradiances up to 2×1014 W/cm2. Energy conversion efficiency from 249 nm laser light to x rays at 1.0 keV≤hν≤1.4 keV is measured as a function of target irradiance and the maximum efficiency is ≊2.5%. The full width half‐maximum duration of the plasma x‐ray pulse is ≊5 ns which corresponds to a peak power x‐ray conversion efficiency ≊7.5%.
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07.85.-m X- and γ-ray instruments
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
85.40.Hp Lithography, masks and pattern transfer

GaAs/AlGaAs optical waveguides on silicon substrates grown by molecular beam epitaxy

Young‐Soon Kim, Ramu V. Ramaswamy, Shiro Sakai, R. J. Matyi, and H. Shichijo

Appl. Phys. Lett. 53, 1586 (1988); http://dx.doi.org/10.1063/1.99920 (2 pages) | Cited 2 times

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A single‐heterostructure optical waveguide at 1.3 μm wavelength in GaAs/AlGaAs, grown on Si by molecular beam epitaxy, is demonstrated. 6‐μm‐wide ridge waveguides with 0.25 μm ridge height had single modes and the measured average propagation loss was 11.7 dB/cm. The principal loss was mainly due to the relatively large free‐carrier concentration in the guiding layer. It is expected that lower free‐carrier concentration (∼1015 cm−3) will lead to waveguides with propagation loss of less than 3 dB/cm.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Measurements of F∗, CF, and CF2 formation and decay in pulsed fluorocarbon discharges

S. G. Hansen, G. Luckman, and Steven D. Colson

Appl. Phys. Lett. 53, 1588 (1988); http://dx.doi.org/10.1063/1.100436 (3 pages) | Cited 22 times

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The temporal population profiles of F∗, CF, and CF2 in a sharp‐edged, pulsed (500 μs), fluorocarbon discharge are examined. F∗ population rises and falls with the discharge current suggesting that electron impact of the parent fluorocarbon is the primary source of emitting fluorine atoms. Ground‐state CF and CF2, monitored by laser‐induced fluorescence, show noticeably slower formation and decay, but a simple kinetic model assuming that each arises from direct electron impact of the parent gas fits the data. It is shown that CF can be conveniently monitored by exciting the math(v′=2)−math(v″=0) transition with a 193 nm ArF excimer laser.
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33.50.Dq Fluorescence and phosphorescence spectra
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Low‐temperature organometallic chemical vapor deposition of platinum

Yea‐jer Chen, Herbert D. Kaesz, Hareesh Thridandam, and Robert F. Hicks

Appl. Phys. Lett. 53, 1591 (1988); http://dx.doi.org/10.1063/1.99921 (2 pages) | Cited 16 times

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Impurity‐free, polycrystalline films of platinum have been grown by the decomposition of cyclopentadienyl platinum trimethyl, CpPtMe3, in hydrogen and a noble gas over silicon or glass substrates heated to 180 °C. The films contain less than 1 at. % of oxygen and carbon, and no other detectable impurities, as measured by x‐ray photoelectron and Auger spectroscopies after argon ion sputtering. Sheet resistivities are 50% greater than sputter‐deposited platinum.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.At Metal and metallic alloys

Enhanced Sb diffusion in Si under thermal Si3N4 films during annealing in Ar

S. T. Ahn, H. W. Kennel, J. D. Plummer, and W. A. Tiller

Appl. Phys. Lett. 53, 1593 (1988); http://dx.doi.org/10.1063/1.100439 (3 pages) | Cited 9 times

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The effect of the presence of a thermally grown Si3N4 film on Sb diffusion in Si during annealing in Ar at 1100 °C has been investigated. Enhanced Sb diffusion under thermal nitride was observed and the enhancement effect disappeared when the nitride was removed before Ar annealing. These results strongly suggest that the enhanced Sb diffusion observed during thermal nitridation of Si is not directly related to the growth of thermal nitride. These effects are instead attributed to stresses in the thermal nitride film. Possible mechanisms of dopant diffusion affected by stresses in thin films are discussed.
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66.30.J- Diffusion of impurities
66.30.Lw Diffusion of other defects
68.60.Bs Mechanical and acoustical properties
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Ordering of Al0.5Ga0.5P by high‐energy electron irradiation

Takao Wada and Yoshinobu Maeda

Appl. Phys. Lett. 53, 1596 (1988); http://dx.doi.org/10.1063/1.99922 (3 pages) | Cited 4 times

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A long‐range order of Al0.5Ga0.5P layers grown by electron beam epitaxy on a (100) GaP substrate has been detected. Surfaces of Al layers deposited by vacuum evaporation on GaP wafers were irradiated with a fluence of (1–5)×1017 electrons cm−2 at 7 MeV and 50 °C. It is speculated that since a great number of electron‐hole pairs are created, the strong enhancement of the diffusion of Al atoms may be caused by the energy release mechanism and an Al interstitial may preferably occupy a Ga site by the ‘‘kick‐out’’ mechanism and for the formation of much stabler bonds between group III and V atoms.
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61.80.Fe Electron and positron radiation effects
68.55.-a Thin film structure and morphology
68.35.Fx Diffusion; interface formation
66.30.-h Diffusion in solids

Influence of compressive and tensile strain on growth mode during epitaxical growth: A computer simulation study

S. V. Ghaisas and A. Madhukar

Appl. Phys. Lett. 53, 1599 (1988); http://dx.doi.org/10.1063/1.99923 (3 pages) | Cited 13 times

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The influence of compressive and tensile strain on the growth front morphology during molecular beam epitaxy is examined via computer simulations. It is found that the tendency for occurrence of three (two) dimensional morphology for compressive (tensile) strain indicated in reflection high‐energy electron diffraction intensity measurements can be understood in terms of the influence of strain on the surface migration kinetics provided it is assumed that (i) for compressive in‐plane strain the intraplanar migration is lowered whereas the interplanar migration is enhanced, and (ii) the opposite holds for tensile in‐plane strain.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.35.Fx Diffusion; interface formation

Adhesion and deformation study of metal/polymer structures by a stretch deformation method

P. S. Ho and F. Faupel

Appl. Phys. Lett. 53, 1602 (1988); http://dx.doi.org/10.1063/1.99924 (3 pages) | Cited 23 times

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A stretch deformation method has been developed for quantitative study of adhesion and deformation of metal/polymer structures. The adhesion energy is directly measured from the difference in the load versus elongation curves between film/substrate and substrate structures. This method has been applied to study structures formed with Cu, Cr, and Cu/Cr deposited on pyromellitic dianhydride‐oxydianiline polyimide. The importance of crack formation in the metal layer for initiating interfacial delamination is demonstrated.
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68.35.Gy Mechanical properties; surface strains
68.60.Bs Mechanical and acoustical properties
62.20.Qp Friction, tribology, and hardness
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials

Measurement of stable species present during filament‐assisted diamond growth

Stephen J. Harris, Anita M. Weiner, and Thomas A. Perry

Appl. Phys. Lett. 53, 1605 (1988); http://dx.doi.org/10.1063/1.99925 (3 pages) | Cited 152 times

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We have measured mole fractions of two of the major stable species at the surface of a silicon substrate during filament‐assisted diamond growth as a function of the filament‐to‐substrate distance. Input gases were methane and hydrogen. A quartz probe withdrew gases at the growing surface, and the gases were sampled with an on‐line mass spectrometer. Close to the filament the methane is largely consumed, with most of the remaining gas phase carbon in the form of acetylene. Mass spectral results are compared to compositions calculated with a detailed chemical kinetics model. Our initial analysis suggests that diamond growth comes mainly from reaction of acetylene, ethylene, methane, or methyl radical.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.35.Dv Composition, segregation; defects and impurities
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Photovoltaic infrared sensors in heteroepitaxial PbTe on Si

C. Maissen, J. Masek, H. Zogg, and S. Blunier

Appl. Phys. Lett. 53, 1608 (1988); http://dx.doi.org/10.1063/1.99926 (3 pages) | Cited 10 times

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Arrays of photovoltaic infrared sensors for thermal imaging applications have been fabricated in narrow gap PbTe grown heteroepitaxially on Si substrates. PbTe epitaxy was achieved with the aid of intermediate CaF2 /BaF2 buffer layers of only ≊2000 Å thickness. Blocking Pb contacts on about 3‐μm‐thick p‐PbTe layers form the active areas of the sensors. Cutoff wavelengths are 5.6 μm, and resistance‐area products are up to R0A=400 Ω cm2 at 85 K with mean value R0A≊150 Ω cm2 for 66 element linear arrays, well above the room‐temperature photon field background noise limit. The temperature dependence of R0A indicates a depletion‐limited noise current behavior between 250 and 100 K.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Dw Photodiodes; phototransistors; photoresistors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Photoluminescence excitation spectroscopy of GaxIn1−xAsyP1−y/InP quantum wells

E. A. Montie, P. J. A. Thijs, and G. W. ’t Hooft

Appl. Phys. Lett. 53, 1611 (1988); http://dx.doi.org/10.1063/1.99927 (3 pages) | Cited 16 times

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Photoluminescence excitation measurements were performed on GaxIn1−xAsyP1−y/InP single quantum wells. The results were analyzed with a k⋅p approach. Using the effective masses reported in the literature, the ratio of the discontinuities in the conduction and valence band is found to be 35:65. This is in good agreement with a ratio of 37:63, obtained directly from an observed transition involving free holes.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Low‐frequency resonant Raman scattering in AlAs‐GaAs atomic‐layer superlattices

Takeshi Toriyama, Naoki Kobayashi, and Yoshiji Horikoshi

Appl. Phys. Lett. 53, 1614 (1988); http://dx.doi.org/10.1063/1.99928 (3 pages)

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New Raman lines are observed at the lowest ever frequencies in (AlAs)1(GaAs)n (n=1,2,3) atomic‐layer superlattices under band‐gap resonant excitation at low temperature. These lines appear in the 30–60 cm−1 region and their intensity is resonantly enhanced as the excitation photon energy approaches the photoluminescence peak energy. Analyses using the elastic continuum model indicate that these lines could be attributed to folded transverse acoustic phonons near the Brillouin‐zone edge of the superlattices.
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78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Experimental observation of the dynamical image potential in extremely low GaAs/AlxGa1−xAs/GaAs tunnel barriers

P. Guéret, E. Marclay, and H. Meier

Appl. Phys. Lett. 53, 1617 (1988); http://dx.doi.org/10.1063/1.99929 (3 pages) | Cited 49 times

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Tunneling in low‐barrier GaAs/AlxGa1−xAs/GaAs heterostructures has been systematically investigated over a wide range of barrier heights and thicknesses. Measured conductance data have been compared with tunnel conductances calculated with and without the image potential correction. Experimental evidence is found for the validity of the static image correction in the limit of large tunneling times, and for the occurrence of dynamic effects in the limit of short tunneling times.
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73.40.Gk Tunneling
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Ty Semiconductor-insulator-semiconductor structures
85.30.De Semiconductor-device characterization, design, and modeling

Photoluminescence from AlInAs/InP quantum wells grown by organometallic vapor phase epitaxy

Leye Aina, Mike Mattingly, and Lisa Stecker

Appl. Phys. Lett. 53, 1620 (1988); http://dx.doi.org/10.1063/1.99930 (3 pages) | Cited 31 times

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Photoluminescence from AlInAs/InP quantum wells and single heterojunctions is reported for the first time. An emission centered around 1.1 eV which is most intense in multiquantum well structures, is shown to originate from confined‐particle transitions involving spatially separated electrons and holes in quantum wells in the InP and AlInAs, respectively. The AlInAs/InP heterostructure is shown to have a staggered band lineup with an effective band gap of 1.06 eV.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Room‐temperature switching and negative differential resistance in the heterostructure hot‐electron diode

T. K. Higman, L. M. Miller, M. E. Favaro, M. A. Emanuel, K. Hess, and J. J. Coleman

Appl. Phys. Lett. 53, 1623 (1988); http://dx.doi.org/10.1063/1.99931 (3 pages) | Cited 15 times

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We report new experimental results on the heterostructure hot‐electron diode. Improved structures, grown by metalorganic chemical vapor deposition, incorporate a single rectangular tunneling barrier of AlAs adjacent to a GaAs drift region which provides a large Γ conduction‐band offset. These devices exhibit significant S‐shaped negative differential resistance and dc switching at 300 K.
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85.30.De Semiconductor-device characterization, design, and modeling
73.50.Fq High-field and nonlinear effects
73.61.Ey III-V semiconductors

Hydrogen incorporation in undoped microcrystalline silicon

N. M. Johnson, S. E. Ready, J. B. Boyce, C. D. Doland, S. H. Wolff, and J. Walker

Appl. Phys. Lett. 53, 1626 (1988); http://dx.doi.org/10.1063/1.99932 (3 pages) | Cited 14 times

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Hydrogen in undoped, unalloyed microcrystalline silicon (μc‐Si:H) has been investigated with secondary‐ion mass spectrometry (SIMS), Raman spectroscopy, infrared absorption spectroscopy, and nuclear magnetic resonance (NMR). The samples were grown by plasma‐enhanced chemical vapor deposition with hydrogen to silane dilution ratios (H2:SiH4) ranging from 0:1 to 98:1. Microcrystallinity is obtained for dilution ratios of 20:1 and greater. The hydrogen concentration is shown to depend nonmonotonically on the degree of hydrogen dilution. The H concentration in the films decreases with dilution for ratios from 0:1 to 10:1 and then increases with greater dilution. This dependence on dilution is established with both NMR and SIMS and suggests the existence of competing processes in the incorporation of hydrogen during deposition. It is further observed that the formation of microcrystallites is accompanied by the appearance of both higher order silicon hydrides and large concentrations of unbound molecular hydrogen.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.-a Thin film structure and morphology

Photoconductive Hg1−xCdxTe detectors grown by low‐temperature metalorganic chemical vapor deposition

C. G. Bethea, B. F. Levine, P.‐Y. Lu, L. M. Williams, and M. H. Ross

Appl. Phys. Lett. 53, 1629 (1988); http://dx.doi.org/10.1063/1.99933 (3 pages) | Cited 4 times

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We have fabricated high‐sensitivity Hg1−xCdxTe detectors from low‐temperature metalorganic vapor deposition samples. Responsivities of R=2000 V/W and detectivities of D∗=2×1010 cm  Hz1/2/W have been achieved.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
72.40.+w Photoconduction and photovoltaic effects
73.50.Pz Photoconduction and photovoltaic effects

Compositional disordering of GaAs/AlGaAs multiple quantum wells using ion bombardment at elevated temperatures

K. K. Anderson, J. P. Donnelly, C. A. Wang, J. D. Woodhouse, and H. A. Haus

Appl. Phys. Lett. 53, 1632 (1988); http://dx.doi.org/10.1063/1.99934 (3 pages) | Cited 16 times

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A new method has been developed for compositional mixing of heterostructures by ion bombardment at elevated temperatures. Complete mixing of a 1‐μm‐thick GaAs/AlGaAs 40‐period multiple quantum well layer has been achieved by bombardment with 380 keV Ne+ ions for 1 h with the sample at 700 °C. This temperature is much lower than the annealing temperatures used in other vacancy‐enhanced disordering techniques, and even lower temperatures and shorter durations should be possible. Compositional disordering is verified by sputter‐profile Auger electron spectroscopy and transmission electron microscopy. Complete mixing is also demonstrated by optical transmission spectra of the disordered material, which exhibit the same band edge as a uniform alloy with the average aluminum mole fraction of the multiple quantum well layer.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.80.Jh Ion radiation effects
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.55.Nq Composition and phase identification

Mechanism for ion‐induced mixing of GaAs‐AlGaAs interfaces by rapid thermal annealing

K. B. Kahen, G. Rajeswaran, and S. T. Lee

Appl. Phys. Lett. 53, 1635 (1988); http://dx.doi.org/10.1063/1.99935 (3 pages) | Cited 21 times

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A mechanism for the transient‐enhanced interdiffusion of GaAs‐AlGaAs interfaces during rapid thermal annealing of ion‐implanted heterostructures is proposed. The model is based on the solution of the coupled diffusion equations involving the excess vacancies and the post‐implantation Al distribution following ion implantation. Both initial distributions are obtained from the solution of a three‐dimensional Monte Carlo simulation of ion implantation into a heterostructure sample. In general, the model is valid for time frames within which impurity diffusion does not occur appreciably so that impurity‐enhanced diffusion remains a weak effect.
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68.35.Fx Diffusion; interface formation
61.80.Jh Ion radiation effects
66.30.J- Diffusion of impurities
61.72.Bb Theories and models of crystal defects

GaAs device passivation using sputtered silicon nitride

Edward Y. Chang, Gregory T. Cibuzar, James M. Vanhove, Rao M. Nagarajan, and Krishna P. Pande

Appl. Phys. Lett. 53, 1638 (1988); http://dx.doi.org/10.1063/1.100402 (3 pages) | Cited 5 times

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This letter describes the passivation of GaAs field‐effect transistors (FET’s) using sputtered silicon nitride films. A low‐power reactive sputtering process for silicon nitride film deposition was developed and applied to both metal‐semiconductor FET (MESFET) and high electron mobility transistor (HEMT) passivation. It is shown that the shifts in the FET parameters such as threshold voltage, breakdown voltage, and transconductance, after nitride deposition, depend not only on the stress states of the nitride films but also on the surface composition and recess geometry of the passivated surfaces. With proper deposition parameters, the sputtered silicon nitride film can be successfully used for both MESFET and HEMT passivation with only minor degradation (less than 10%) of the device performance.
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85.30.Tv Field effect devices
81.65.-b Surface treatments
73.61.Ng Insulators
68.60.Wm Other nonelectronic physical properties

Extrinsic p‐type doping of HgCdTe grown by organometallic epitaxy

S. K. Ghandhi, N. R. Taskar, K. K. Parat, D. Terry, and I. B. Bhat

Appl. Phys. Lett. 53, 1641 (1988); http://dx.doi.org/10.1063/1.99936 (3 pages) | Cited 10 times

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In this letter, we report on the extrinsic p‐type doping of mercury cadmium telluride (MCT), during growth by organometallic vapor phase epitaxy. Arsine gas in hydrogen was used as the dopant source. The layers were characterized by Hall effect and by resistivity measurements over the temperature range from 20 to 300 K. The acceptor ionization energy was obtained for different doping concentrations from the Hall coefficient data. Its value decreases with doping concentration, and is about 8.5 meV for a doping of 1.1×1016 cm−3. This is a factor of 2 lower than the ionization energy of mercury vacancies, for layers of this (27–30% cadmium) composition and doping level. Annealing at 205 °C for 15 h in a Hg‐rich ambient did not produce significant changes in the measured doping concentration. This indicates that the acceptor level is extrinsic in nature, and that arsenic behaves as a stable acceptor dopant in MCT, grown by organometallic epitaxy.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.61.Ga II-VI semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)

Kinetics of the generation and annealing of deep defects and recombination centers in amorphous silicon

K. Shepard, Z E. Smith, S. Aljishi, and S. Wagner

Appl. Phys. Lett. 53, 1644 (1988); http://dx.doi.org/10.1063/1.99937 (3 pages) | Cited 24 times

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The number of deep defects (as measured by sub‐band‐gap optical absorption) and the number of recombination centers (as measured by steady‐state photoconductivity) in high quality undoped hydrogenated amorphous silicon are monitored as the film undergoes light‐induced defect generation and thermal annealing (the Staebler–Wronski effect). The kinetics of the growth in the density of deep defects agree well with the kinetics of spin centers reported by Stutzmann, Jackson, and Tsai. [Appl. Phys. Lett. 45, 1075 (1984)]. The density of recombination centers is directly related, though not simply proportional to, the density of deep defects; as samples are annealed, the recombination center density drops much more quickly than the total defect density. This behavior is shown to arise if the distribution of defect energy levels corresponds to a distribution of defect annealing energies.
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71.55.Ht Other nonmetals
61.72.Bb Theories and models of crystal defects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Growth and transport properties of InAs epilayers on GaAs

Seref Kalem, Jen‐Inn Chyi, Hadis Morkoç, Ross Bean, and Ken Zanio

Appl. Phys. Lett. 53, 1647 (1988); http://dx.doi.org/10.1063/1.99938 (3 pages) | Cited 15 times

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A series of InAs epitaxial layers with thicknesses ranging from 0.5 up to 6.2 μm was grown on (100) oriented semi‐insulating GaAs substrates by molecular beam epitaxy. The transport properties of the layers have been investigated by Hall effect measurements down to 10 K. The properties of the films are greatly influenced not only by the growth conditions but also by the InAs/GaAs interface structure. The mobility at room temperature is 1.8×104 cm2/V s (n=6.1×1015 cm−3) and peaks at about liquid‐nitrogen temperature with a value of 5.173×104 cm2/V s (n=3.1×1015 cm−3) for a 6.2‐μm‐thick InAs layer. It is shown that the temperature dependence as well as the magnitude of the mobility can be explained by a combined impurity‐phonon‐dislocation scattering mechanism. From the combination, dislocation densities of the order of 106 cm−2 are found.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Ey III-V semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
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