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24 Oct 1988

Volume 53, Issue 17, pp. 1577-1667

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Generation of interface states in nitrided oxide gate dielectrics by ionizing radiation and Fowler–Nordheim stressing

G. J. Dunn

Appl. Phys. Lett. 53, 1650 (1988); http://dx.doi.org/10.1063/1.100440 (2 pages) | Cited 14 times

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Annealing of silicon dioxide gate dielectrics in ammonia is known to suppress interface state generation under ionizing radiation. However, under high field stress interface state generation in lightly nitrided oxides is found to be comparable to that in the unaltered oxide, while it is reduced in heavily nitrided oxides and eliminated altogether in reoxidized samples of either type.
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71.55.Ht Other nonmetals
61.80.Cb X-ray effects
81.05.Kf Glasses (including metallic glasses)
81.65.-b Surface treatments
73.50.Fq High-field and nonlinear effects

Raman scattering by optical phonons in In1−y−zAlyGazAs lattice matched to InP

R. Borroff, R. Merlin, A. Chin, and P. K. Bhattacharya

Appl. Phys. Lett. 53, 1652 (1988); http://dx.doi.org/10.1063/1.100441 (2 pages) | Cited 16 times

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We report on Raman scattering by longitudinal optical phonons in In1−y−zAlyGazAs (1−y−z=0.53) lattice matched to InP. The quaternary alloys were grown on (001) InP by molecular beam epitaxy. The phonon spectra exhibit three‐mode behavior. The frequencies of AlAs‐ and GaAs‐like modes vary linearly with the concentration of Al (or Ga) while the position of the InAs‐like phonon remains nearly constant. The data show no evidence of alloy clustering.
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78.30.Fs III-V and II-VI semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Oriented high‐temperature superconducting Bi‐Sr‐Ca‐Cu‐O thin films prepared by ion beam deposition

Robert D. Lorentz and J. H. Sexton

Appl. Phys. Lett. 53, 1654 (1988); http://dx.doi.org/10.1063/1.100442 (3 pages) | Cited 4 times

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High‐temperature superconducting Bi‐Sr‐Ca‐Cu‐O thin films have been prepared by ion beam sputter deposition. Films near the 2:2:1:2 and 4:3:3:4 compositions were deposited onto single‐crystal MgO [100] substrates and annealed between 825 and 880 °C. Films with composition Bi2.00Sr2.09Ca0.75Cu2.44Ox have a transition beginning at approximately 85 K, with Tc(R=0) reached at 75 K. For films with composition Bi4.00Sr3.12Ca3.03Cu4.56Ox, a significant drop in the resistance is observed at about 110 K, with Tc(R=0) between 63 and 67 K. Films of both compositions have strong preferential c‐axis orientation normal to the film plane.
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74.78.-w Superconducting films and low-dimensional structures
68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition

Passivation of high Tc superconductor surfaces with CaF2 and Bi, Al, and Si oxides

D. M. Hill, H. M. Meyer, J. H. Weaver, and D. L. Nelson

Appl. Phys. Lett. 53, 1657 (1988); http://dx.doi.org/10.1063/1.100390 (3 pages) | Cited 32 times

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X‐ray photoelectron spectroscopy has been used to investigate passivation of the high‐temperature superconductors YBa2Cu3O7−x and Bi2Ca1+xSr2−xCu2O8+y involving overlayer materials deposited in vacuum onto freshly cleaved surfaces. CaF2 was found to be completely inert and to form uniform overlayers on the surface. Deposition of Bi, Si, and Al in activated oxygen produced oxides and exhibited minimal reaction and disruption of the superconductor surface. In contrast, results for Bi, Si, and Al deposition in nonactivated oxygen or ultrahigh vacuum showed extensive substrate disruption due to surface reactions and oxygen withdrawal. This indicates that the activation technique provides oxygen from the gas phase for oxide formation and facilitates nondisruptive overlayer growth, even for reactive metals.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures

Molecular beam epitaxy of layered Dy‐Ba‐Cu‐O compounds

D. G. Schlom, J. N. Eckstein, E. S. Hellman, S. K. Streiffer, J. S. Harris, M. R. Beasley, J. C. Bravman, T. H. Geballe, C. Webb, K. E. von Dessonneck, and F. Turner

Appl. Phys. Lett. 53, 1660 (1988); http://dx.doi.org/10.1063/1.100443 (3 pages) | Cited 18 times

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Heteroepitaxial Dy‐Ba‐Cu‐O films have been grown in situ on SrTiO3 substrates using an oxygen plasma beam and elemental source beams in a modified molecular beam epitaxy machine. By periodically shuttering the Dy and Ba beams during growth, flat surfaces of layered Dy‐Ba‐Cu‐O compounds have been obtained. Periodic oscillations in the intensity of the in situ reflection high‐energy electron diffraction pattern were observed during shuttered growths. Depending on growth conditions, the as‐grown layers have ranged from insulating to superconducting with onset temperatures above 60 K.
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74.78.-w Superconducting films and low-dimensional structures
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition

Thin‐film high Tc superconductors prepared by a simple flash evaporation technique

M. S. Osofsky, P. Lubitz, M. Z. Harford, A. K. Singh, S. B. Qadri, E. F. Skelton, W. T. Elam, R. J. Soulen, W. L. Lechter, and S. A. Wolf

Appl. Phys. Lett. 53, 1663 (1988); http://dx.doi.org/10.1063/1.100468 (2 pages) | Cited 8 times

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Thin films of Bi‐Sr‐Ca‐Cu‐O and Tl‐Ba‐Ca‐Cu‐O have been deposited on single‐crystal MgO substrates by a simple flash evaporation technique. Small pellets of the superconducting compound were formed by standard techniques, then evaporated to completion on the MgO substrates using an electron beam. The best films show an onset of superconductivity at approximately 110 K and zero resistance by 78 K. X‐ray diffraction measurements show the films to be tetragonal with nominal lattice parameters of a=3.85 Å and c=30.66 Å. The x‐ray data also show the films to be highly textured with the metal‐oxide planes parallel to the substrate surface.
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74.78.-w Superconducting films and low-dimensional structures
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
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Comment on ‘‘Low‐temperature reactive ion etching and microwave plasma etching of silicon’’ [Appl. Phys. Lett. 52, 616 (1988)]

J. Pelletier

Appl. Phys. Lett. 53, 1665 (1988); http://dx.doi.org/10.1063/1.99792 (2 pages) | Cited 7 times

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Abstract Unavailable
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81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
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Response to ‘‘Comment on ‘Low‐temperature reactive ion etching and microwave plasma etching of silicon’ ’’ [Appl. Phys. Lett. 53, 1665 (1988)]

Shinichi Tachi, Kazunori Tsujimoto, and Sadayuki Okudaira

Appl. Phys. Lett. 53, 1666 (1988); http://dx.doi.org/10.1063/1.99793 (2 pages) | Cited 3 times

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Abstract Unavailable
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81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
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