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31 Oct 1988

Volume 53, Issue 18, pp. 1675-1770

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Mode‐locked and Q‐switched operation of a diode laser pumped Nd:YAG laser operating at 1.064 μm

G. T. Maker, S. J. Keen, and A. I. Ferguson

Appl. Phys. Lett. 53, 1675 (1988); http://dx.doi.org/10.1063/1.99794 (3 pages) | Cited 10 times

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We describe the performance of a mode‐locked and Q‐switched Nd:YAG laser operating at 1.064 μm, optically pumped by a 500 mW diode laser. The cw mode‐locked system provides bandwidth‐limited pulses of 55 ps duration, with a corresponding peak power of 3.3 W. When Q‐switched the energy within the 100 ns pulse envelope is 10 μJ giving a peak power in the largest pulse of 7 kW. Preliminary results for operation at 1.32 μm are also reported.
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42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Rz Doped-insulator lasers and other solid state lasers

Surface‐emitting, multiple quantum well GaAs/AlGaAs laser with wavelength‐resonant periodic gain medium

M. Y. A. Raja, S. R. J. Brueck, M. Osiński, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons

Appl. Phys. Lett. 53, 1678 (1988); http://dx.doi.org/10.1063/1.99795 (3 pages) | Cited 16 times

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See Also: Erratum

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A novel surface‐emitting semiconductor laser with a vertical resonator, extremely short gain length, and enhanced gain at a specific design wavelength has been demonstrated. The gain medium consists of a series of GaAs quantum wells separated by AlGaAs spacers whose thicknesses are chosen to be one‐half the wavelength of a particular transition in the quantum wells. This structure forces the antinodes of the standing‐wave optical field to coincide with the gain elements, enhancing the gain and frequency selectivity in the vertical direction and substantially reducing amplified spontaneous emission. We have achieved optically pumped lasing with a threshold of 6 MW/cm2 at room temperature in a molecular beam epitaxially grown structure of thickness 4.3 μm, of which only 320 nm provided gain.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems

Single‐mode buried channel waveguide by single‐step electromigration technique using silver film

H. Zhenguang, R. Srivastava, and R. V. Ramaswamy

Appl. Phys. Lett. 53, 1681 (1988); http://dx.doi.org/10.1063/1.99796 (3 pages) | Cited 4 times

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Single‐mode buried channel waveguides with circularly symmetric mode field distribution compatible with conventional single‐mode fibers at 1.3 μm wavelength were fabricated and characterized for the first time using a novel single‐step ion exchange process from silver films. The technique is relatively simple and eliminates the gold electrode deposition used in previously reported fabrication methods.
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42.79.Gn Optical waveguides and couplers
66.30.Qa Electromigration
42.82.-m Integrated optics
42.81.Bm Fabrication, cladding, and splicing

Electrodispersive multiple quantum well modulator

Y. H. Lee, J. L. Jewell, S. J. Walker, C. W. Tu, J. P. Harbison, and L. T. Florez

Appl. Phys. Lett. 53, 1684 (1988); http://dx.doi.org/10.1063/1.99797 (3 pages) | Cited 23 times

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Quantum‐confined Stark effect is combined with a Fabry–Perot resonance to build a multiple quantum well electro‐optic modulator. The structure consists of GaAs/AlGaAs quantum wells between two epitaxial AlAs/AlGaAs dielectric multilayer mirrors, all grown by molecular beam epitaxy. The modulator uses refractive index changes induced by applied electric fields. In reflection mode of operation, the modulator demonstrates >5:1 contrast ratio and >50% absolute maximum reflectivity with 17 V applied.
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42.79.Hp Optical processors, correlators, and modulators
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.20.Jq Electro-optical effects

High‐pressure phases of SiO2 made in air by Fedoseev–Derjaguin laser process

M. Alam, T. DebRoy, R. Roy, and E. Breval

Appl. Phys. Lett. 53, 1687 (1988); http://dx.doi.org/10.1063/1.100469 (3 pages) | Cited 6 times

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Exposure of a falling stream of 1 μm average size α‐quartz particles to a continuous wave or pulsed CO2 laser beam in air resulted in the formation of a complete series of high‐pressure phases of silica: coesite, stishovite, and apparently even denser forms with α‐PbO2 and Fe2N structures. Since the laser exposure technique works with the carbon black to diamond transition, the technique is confirmed as a simple and generally applicable means to achieve the same effects as exposure to several hundred kilobars pressure.
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64.70.K- Solid-solid transitions
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
62.50.-p High-pressure effects in solids and liquids

Efficient, long pulse XeF(C→A) laser at moderate electron beam pump rate

A. Mandl and L. N. Litzenberger

Appl. Phys. Lett. 53, 1690 (1988); http://dx.doi.org/10.1063/1.99798 (3 pages) | Cited 4 times

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Efficient, long pulse lasing on the XeF(C→A) electronic transition has been demonstrated in an electron beam pumped device at a moderate pump rate of ∼250 kW/cm3 . A mixture of F2, NF3, Xe, Kr, and Ar at a total gas pressure of 1.6 atm was excited with a 700‐ns pulse. Lasing occurred for 400 ns during the excitation pulse. The laser spectrum showed a peak wavelength of 483 nm and a bandwidth of 16 nm. An intrinsic efficiency of 0.7% was determined. The laser output energy was 1 J. Further improvements in laser performance are expected under fully optimized conditions.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Reduced optical waveguide losses of a partially disordered GaAs/AlGaAs single quantum well laser structure for photonic integrated circuits

J. Werner, E. Kapon, A. C. Von Lehmen, R. Bhat, E. Colas, N. G. Stoffel, and S. A. Schwarz

Appl. Phys. Lett. 53, 1693 (1988); http://dx.doi.org/10.1063/1.99799 (3 pages) | Cited 14 times

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We present TE and TM waveguide loss measurements of partially disordered GaAs/AlGaAs quantum well separate confinement laser structures. Disordering is accomplished by silicon ion implanation and subsequent annealing. Propagation losses as low as 9 cm−1 are observed at the lasing wavelength of the corresponding untreated laser wafer. The waveguides are shown to be compatible with fabrication and dimensional requirements of high quality semiconductor lasers; ridge waveguide lasers fabricated in unimplanted portions of the same wafer exhibit threshold currents of only 8 mA. The results show that impurity‐induced quantum well disordering is suitable for monolithic integration of low‐threshold quantum well lasers and transparent optical waveguides.
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42.79.Gn Optical waveguides and couplers
42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

GHz bandwidth magneto‐optic interaction in yttrium iron garnet‐gadolinium gallium garnet waveguide using magnetostatic forward volume waves

D. Young and C. S. Tsai

Appl. Phys. Lett. 53, 1696 (1988); http://dx.doi.org/10.1063/1.99800 (3 pages) | Cited 15 times

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Very large bandwidth noncollinear coplanar magneto‐optic interaction with magnetostatic forward volume waves in an yttrium iron garnet‐gadolinium gallium garnet (YIG‐GGG) waveguide is reported for the first time. Bandwidths of 0.78 and 1.03 GHz centered, respectively, at the carrier frequencies of 2.5 and 6.0 GHz, and TM0 ‐TE0 mode‐conversion efficiencies of 0.54 and 0.50% have been achieved at the optical wavelength of 1.317 μm using a single microstrip transducer and homogeneous dc magnetic fields of 2200 and 3500 Oe. A summary of related coupled‐mode analysis is also presented.
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85.70.Ge Ferrite and garnet devices
85.70.Sq Magnetooptical devices
78.20.Ls Magneto-optical effects
42.79.Gn Optical waveguides and couplers

Evidence for large‐area superemission into a high‐current glow discharge

W. Hartmann, V. Dominic, G. F. Kirkman, and M. A. Gundersen

Appl. Phys. Lett. 53, 1699 (1988); http://dx.doi.org/10.1063/1.100395 (3 pages) | Cited 17 times

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This letter presents evidence for large‐area (≊1 cm2) cathode superemission (∼10 000 A/cm2) into a high‐current glow discharge in a pseudospark or back lighted thyratron switch. Cathodes studied with a scannning electron microscope following operation at 6–8 kA, ≊1 μs pulse length, and 105 pulses in a low‐pressure H2 discharge show evidence of melting of a thin surface layer within a radius of ∼4 mm, indicating that the discharge is a superdense glow with a cross‐sectional area of the order of 1 cm2, rather than an arc. Further supporting evidence is provided by streak camera data. An ion beam present during the avalanche phase of the discharge is responsible for heating the cathode surface resulting in a significant field‐enhanced thermionic emission.
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52.40.Hf Plasma-material interactions; boundary layer effects
79.40.+z Thermionic emission
52.75.Kq Plasma switches (e.g., spark gaps)
52.80.Hc Glow; corona

Metalorganic chemical vapor deposition of PbTiO3 thin films

B. S. Kwak, E. P. Boyd, and A. Erbil

Appl. Phys. Lett. 53, 1702 (1988); http://dx.doi.org/10.1063/1.100471 (3 pages) | Cited 34 times

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PbTiO3 thin films have been grown successfully for the first time by using purely metalorganic precursors, namely, titanium isopropoxide and tetraethyllead. A scanning electron micrograph showed dense and noncolumnar growth with good surface morphology. Temperature‐dependent x‐ray diffraction studies provide evidences for a reversible tetragonal to cubic phase transition around 540 °C. At room temperature, the dielectric constant is about 180.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
77.55.-g Dielectric thin films

Laser‐driven chemical vapor deposition of platinum at atmospheric pressure and room temperature from CpPt(CH3)3

Lynn Vogel Koplitz, David K. Shuh, Y.‐J. Chen, R. Stanley Williams, and Jeffrey I. Zink

Appl. Phys. Lett. 53, 1705 (1988); http://dx.doi.org/10.1063/1.100472 (3 pages) | Cited 14 times

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Photolysis of CpPt(Me)3(Cp=η5‐C5H5, Me=CH3) at room temperature and atmospheric pressure produces thin films and patterned structures of platinum metal on solid substrates. The platinum films are characterized by Auger electron spectroscopy, x‐ray diffraction, and scanning electron microscopy. Substrates can also be prepatterned by laser irradiation and then developed into a shiny platinum deposit at a later time.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.05.Bx Metals, semimetals, and alloys
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Significantly extended analytical potential of Rutherford backscattering spectrometry by in situ combination with low‐energy sputtering

K. Wittmaack and N. Menzel

Appl. Phys. Lett. 53, 1708 (1988); http://dx.doi.org/10.1063/1.99801 (3 pages) | Cited 4 times

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We have assembled a dual‐beam system which allows solid samples to be analyzed by Rutherford backscattering spectrometry (RBS) at deliberately chosen stages of in situ sputter etching by low‐energy ion bombardment. Using the novel setup we demonstrate that, for a large variety of samples, the analytical potential of conventional RBS can be extended remarkably. Apart from the obvious possibility of increasing the accessible depth of analysis, three specific advantages are illustrated: (i) removal of the interference between the signals due to buried dopants and a (low‐mass) substrate, (ii) decoupling of the mass and the energy scale, and (iii) high‐resolution depth analysis of deep‐lying structures (glancing angle RBS) with the ability to circumvent the problems usually associated with sputter‐related mixing effects.
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82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.55.Nq Composition and phase identification
81.65.-b Surface treatments

Observation of iron pileup and reduction of SiO2 at the Si‐SiO2 interface

Yoichi Kamiura, Fumio Hashimoto, and Motohiro Iwami

Appl. Phys. Lett. 53, 1711 (1988); http://dx.doi.org/10.1063/1.99802 (3 pages) | Cited 6 times

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It was found by secondary‐ion mass spectrometry in‐depth profiling technique that approximately 1×1020 iron atoms/cm3 accumulated at the Si‐SiO2 interface of oxidized silicon crystals where iron was introduced by the indiffusion prior to the oxidation at 1000 °C and above. The origin of iron accumulation is ascribed to the iron precipitation from the bulk silicon. It was also found that iron atoms that diffuse in through the bulk from the lapped backside of a preoxidized sample were trapped and aggregated at the front Si‐SiO2 interface. An interesting observation is shown that the above indiffusing iron also entered into the oxide region near the interface possibly to reduce SiO2.
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68.35.Dv Composition, segregation; defects and impurities
68.35.Fx Diffusion; interface formation
66.30.J- Diffusion of impurities
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Observation of grating‐induced intersubband emission from GaAs/AlGaAs superlattices

M. Helm, E. Colas, P. England, F. DeRosa, and S. J. Allen

Appl. Phys. Lett. 53, 1714 (1988); http://dx.doi.org/10.1063/1.99803 (3 pages) | Cited 47 times

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We have observed far‐infrared emission due to electronic transitions between subbands in GaAs/AlGaAs superlattices. Population of higher subbands is achieved by applying an electric field in the plane of the layers. The radiation is coupled out of the sample by a metallic grating on the surface.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.50.Mx High-frequency effects; plasma effects
73.61.Ey III-V semiconductors

Molecular beam epitaxial growth of ultrathin buried metal layers: (Al,Ga)As/NiAl/(Al,Ga)As heterostructures

J. P. Harbison, T. Sands, N. Tabatabaie, W. K. Chan, L. T. Florez, and V. G. Keramidas

Appl. Phys. Lett. 53, 1717 (1988); http://dx.doi.org/10.1063/1.99804 (3 pages) | Cited 51 times

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We report the first growth of epitaxial NiAl metallic layers buried within monocrystalline GaAs/AlAs/NiAl/AlAs/GaAs heterostructures deposited entirely within a molecular beam epitaxy growth chamber. The layer growth sequence is monitored by reflection high‐energy electron diffraction. Cross‐sectional transmission electron microscopy shows that the metal layers and the III‐V overgrowth are monocrystalline and of high quality. Thin, buried NiAl layers over the entire thickness range investigated (3–100 nm) are electrically continuous (69 μΩ cm at 3 nm). The heterostructures formed by this process can be used for the fabrication of thin‐metal buried‐layer devices utilizing ballistic transport or quantum mechanical tunneling across thin metal bases.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.40.Vz Semiconductor-metal-semiconductor structures

Excimer laser induced oxidation of ion‐implanted silicon

E. Fogarassy, C. W. White, A. Slaoui, C. Fuchs, P. Siffert, and S. J. Pennycook

Appl. Phys. Lett. 53, 1720 (1988); http://dx.doi.org/10.1063/1.99805 (3 pages) | Cited 5 times

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We have investigated laser‐induced oxidation of ion‐implanted Si using a repetitively pulsed ArF laser, working at low‐energy density (100–500 mJ/cm2). Oxidation is observed at energy densities between the melt threshold and that required for epitaxial recrystallization of the amorphous layer. At these energy densities, oxidation is not observed on virgin silicon. The factors that influence the oxidation process are discussed.
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81.65.-b Surface treatments
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Chemically controlled deep level formation and band bending at metal‐CdTe interfaces

J. L. Shaw, R. E. Viturro, L. J. Brillson, and D. LaGraffe

Appl. Phys. Lett. 53, 1723 (1988); http://dx.doi.org/10.1063/1.99806 (3 pages) | Cited 10 times

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We have used reactive metal interlayers to suppress anion outdiffusion at Au‐CdTe junctions and thereby to alter the formation of deep interfacial states. Using soft x‐ray photoemission and luminescence spectroscopies, we report a dramatically reduced p‐type band bending and demonstrate that deep levels observed directly at the interface are responsible for the chemically induced electrical behavior.
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68.35.Fx Diffusion; interface formation
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Ns Metal-nonmetal contacts
66.30.Ny Chemical interdiffusion; diffusion barriers

Extremely sharp erbium‐related intra‐4f‐shell photoluminescence of erbium‐doped GaAs grown by metalorganic chemical vapor deposition

Hiroshi Nakagome, Kunihiko Uwai, and Kenichiro Takahei

Appl. Phys. Lett. 53, 1726 (1988); http://dx.doi.org/10.1063/1.99807 (3 pages) | Cited 35 times

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A drastic change is observed in the 1.5 μm Er‐related photoluminescence spectra for GaAs:Er grown by metalorganic chemical vapor deposition, when the growth temperature and arsine partial pressure are reduced. An optically efficient Er‐emitting center which shows a photoluminescence spectrum with narrow linewidth (less than 0.03 nm at 2 K) and high peak intensity is preferentially photoexcited in the crystal grown at 550 °C with a V/III ratio of 3. The linewidth of the luminescence is comparable to rare‐earth‐related luminescence of rare‐earth‐doped insulators such as YAG:Nd.
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78.55.Cr III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.40.Tv Optical and dielectric properties related to treatment conditions
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Cubic zirconia as a species permeable coating for zinc diffusion in gallium arsenide

J. E. Bisberg, F. P. Dabkowski, and A. K. Chin

Appl. Phys. Lett. 53, 1729 (1988); http://dx.doi.org/10.1063/1.99808 (3 pages) | Cited 1 time

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Diffusion of zinc into GaAs through an yttria‐stabilized cubic zirconia (YSZ) passivation layer has been demonstrated with an open‐tube diffusion method. Pure zinc or GaAs/Zn2As3 sources produced high quality planar p‐n junctions. The YSZ layer protects the GaAs surface from excessive loss of arsenic, yet is permeable to zinc, allowing its diffusion into the semiconductor. The YSZ films, deposited by electron beam evaporation, were typically 2000 Å thick. Zinc diffusion coefficients (DT) at 650 °C in the YSZ passivated GaAs ranged from 3.6×10−10 cm2/min for the GaAs/Zn2As3 source to 1.9×10−9 cm2/min for the pure zinc source. Doping concentrations for both YSZ passivated and uncapped samples were approximately 5×1019 cm−3.
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66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation
81.65.-b Surface treatments
85.30.Kk Junction diodes

Electrical properties of Si(100) films doped with low‐energy (≤150 eV) Sb ions during growth by molecular beam epitaxy

P. Fons, N. Hirashita, L. C. Markert, Y.‐W. Kim, J. E. Greene, W.‐X. Ni, J. Knall, G. V. Hansson, and J.‐E. Sundgren

Appl. Phys. Lett. 53, 1732 (1988); http://dx.doi.org/10.1063/1.99809 (3 pages) | Cited 20 times

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A low‐energy ultrahigh‐vacuum compatible ion gun with single‐grid optics was used to provide accelerated Sb ion doping during the growth of Si(100) by molecular beam epitaxy (MBE). The incorporation probability of accelerated Sb in MBE Si films grown at 800 °C with an ion acceleration potential of 150 eV was near unity, more than four orders of magnitude higher than for thermal Sb. The films exhibited complete dopant substitutionality and temperature‐dependent electron mobilities were equal to the best reported bulk Si values for Sb concentrations up to 2×1019 cm−3, more than an order of magnitude higher than obtainable by thermal Sb doping during Si MBE. Transmission electron microscopy examination of all films showed no evidence of dislocations or other extended defects.
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73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Hydrogen plasma induced defects in silicon

S. J. Jeng, G. S. Oehrlein, and G. J. Scilla

Appl. Phys. Lett. 53, 1735 (1988); http://dx.doi.org/10.1063/1.99810 (3 pages) | Cited 48 times

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The nature of extended defects in silicon introduced by hydrogen containing plasmas has been studied by transmission electron microscopy for a variety of technological processes. Depending on the doping level of the substrate, the substrate temperature and the presence/absence of simultaneous energetic ion bombardment, {111} planar defects, gas bubbles, and a heavily damaged near‐surface region have been observed.
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61.72.uf Ge and Si
61.72.Bb Theories and models of crystal defects
61.80.Jh Ion radiation effects
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Contact regrowth technique for low‐resistance nonalloyed contacts to the hot‐electron transistor

C. K. Peng, J. Chen, and H. Morkoç

Appl. Phys. Lett. 53, 1738 (1988); http://dx.doi.org/10.1063/1.99811 (3 pages)

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We report a novel contact regrowth technique for the formation of extremely low nonalloyed ohmic contacts. The successful demonstration of this technique is reported on an InGaAs/InAlAs hot‐electron transistor device. For the investigated InGaAs‐based structure, the regrown contacting scheme reported includes an In0.53Ga0.47As layer, in InAs/GaAs strained‐layer superlattice, and an InAs cap, all heavily doped n type with Si. A very low specific contact resistance of 1.8×10−7 Ω cm2 to the base layer is obtained. The higher current densities achieved in the transistor characteristics are in close agreement with calculations, and a contact model is presented explaining the poor results of conventional nonalloyed contacts.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling

Formation of ultrashallow p+‐n junctions by low‐energy boron implantation using a modified ion implanter

S. N. Hong, G. A. Ruggles, J. J. Paulos, J. J. Wortman, and M. C. Ozturk

Appl. Phys. Lett. 53, 1741 (1988); http://dx.doi.org/10.1063/1.100470 (3 pages) | Cited 12 times

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A conventional ion implanter (Varian Extrion Series 400 implanter) has been modified for the purpose of implanting at ultralow energies (0.5–5 keV). A 35 keV ion beam is decelerated to the desired energy just prior to impacting the substrate, thereby minimizing beam expansion and beam current reduction. The deceleration lens was designed to minimize the variation in energies and incident angles of implanted ions at the target. Computer simulation of the deceleration system indicated that less than a 2° variation in incident angles and a 50 eV variation in ion energies could be expected for 1 keV 11B implantation. Secondary‐ion mass spectrometry revealed essentially identical as‐implanted boron profiles for 1.35 keV 11B implanted with the modified system and 6 keV BF2 implanted without the modification, indicating successful deceleration. The modified implanter was used to form ultrashallow p+‐n junctions via 1 keV 11B implantation coupled with rapid thermal annealing. Results indicate that ultralow‐energy B implantation can be used to create junction depths as shallow as 50 nm.
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61.72.uf Ge and Si
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Interface traps at midgap during defect transformation in (100) Si/SiO2

Yasushiro Nishioka and T. P. Ma

Appl. Phys. Lett. 53, 1744 (1988); http://dx.doi.org/10.1063/1.99776 (3 pages) | Cited 4 times

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The interface traps generated by ionizing radiation or hot‐electron injection undergo continuous changes with time after the damaging source is turned off. This letter focuses on the interfacial defect transformation process in (100) Si/SiO2, in which a large portion of the interface trap peak in the upper half of the Si band gap gradually converts into a second peak in the lower half of the band gap. It will be shown that, when the interfacial defect transformation process dominates, the interface trap density at midgap does not change with time, despite the fact that other portions of the interface traps undergo drastic changes. The time‐dependent behavior of the midgap density provides a convenient indicator to determine whether the dominant process is defect transformation, annealing (the midgap density decreases with time), or latent generation (the midgap density increases with time).
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.72.Bb Theories and models of crystal defects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Effects of substrate misorientation on the structural properties of CdTe(111) grown by molecular beam epitaxy on GaAs(100)

J. L. Reno, P. L. Gourley, G. Monfroy, and J. P. Faurie

Appl. Phys. Lett. 53, 1747 (1988); http://dx.doi.org/10.1063/1.99777 (3 pages) | Cited 19 times

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CdTe (111) layers were grown by molecular beam epitaxy on oriented and misoriented GaAs (100) substrates. The layers were characterized by x‐ray diffraction and photoluminescence microscopy. The results indicate that the CdTe layers grown on GaAs (100) misoriented 2° towards the [110] direction had peaks with full width at half‐maximum up to four times narrower than either of the other orientations tested. Only threading dislocations were visible on this orientation by photoluminescence microscopy. These results indicate that the structural quality of CdTe grown on GaAs can be significantly improved by the use of an appropriately misoriented substrate.
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68.55.-a Thin film structure and morphology
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Et II-VI semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
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