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7 Nov 1988

Volume 53, Issue 19, pp. 1779-1881

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Deformation potential and intervalley scattering: Hot‐electron transistor analysis

Srinivasan Krishnamurthy, A. Sher, and A.‐B. Chen

Appl. Phys. Lett. 53, 1853 (1988); http://dx.doi.org/10.1063/1.100375 (3 pages) | Cited 16 times

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The coupling constants for the intervalley scattering of electrons by acoustic and optical phonons are calculated based on empirical tight‐binding band structures. The calculated intravalley and intervalley scattering rates based on these deformation potentials, polar optical phonon, impurity, and electron‐electron interactions successfully explain the observed ratio of collector‐to‐emitter current as a function of injected electron energy in a GaAs hot‐electron transistor.
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85.30.De Semiconductor-device characterization, design, and modeling
72.20.Ht High-field and nonlinear effects
72.80.Ey III-V and II-VI semiconductors
72.20.Dp General theory, scattering mechanisms

Reversal of x‐ray diffraction dislocation contrast in gallium arsenide

O. Paz, C. C. Goldsmith, and A. Huber

Appl. Phys. Lett. 53, 1856 (1988); http://dx.doi.org/10.1063/1.100376 (3 pages)

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We present x‐ray topography and defect etching results, using a new etch that demonstrates that in GaAs, dislocations and regions decorated with etch pits correspond to low‐intensity x‐ray images. In silicon the opposite effect is observed and dislocations result in a high‐intensity x‐ray image. This reversal, due to an x‐ray dispersion shift from the kinematical range to the dynamical range, is frequently overlooked. The defects investigated include grooves aligned along the [110] direction and decorated with etch pits, as well as etch pits distributed in a cellular structure, with a concentration that follows the W‐shaped dislocation pattern.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.65.-b Surface treatments
68.35.B- Structure of clean surfaces (and surface reconstruction)
07.85.-m X- and γ-ray instruments

Disordering, intermixing, and thermal stability of GaInP/AlInP superlattices and alloys

S. O’Brien, D. P. Bour, and J. R. Shealy

Appl. Phys. Lett. 53, 1859 (1988); http://dx.doi.org/10.1063/1.100377 (3 pages) | Cited 25 times

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The disordering of an ordered state of Ga0.5In0.5P and the partial intermixing of Ga0.5In0.5P/Al0.5In0.5P superlattices has been demonstrated at temperatures between 650 and 975 °C. The localized disordering or intermixing was accomplished by the deposition of SiO2 followed by rapid thermal annealing. Regions with no SiO2 showed minimal intermixing over this temperature range while the capped areas exhibited superlattice energy shifts up to 47 meV. Bulk Ga0.5In0.5P disordered at 900–925 °C for these samples with SiO2 while remaining ordered for samples with no SiO2. The degree of disordering or intermixing was measured using room‐temperature and low‐temperature photoluminescence and Raman spectroscopy.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.60.Dv Thermal stability; thermal effects
68.35.Fx Diffusion; interface formation
66.30.J- Diffusion of impurities

Individual oxide traps as probes into submicron devices

Phillip Restle

Appl. Phys. Lett. 53, 1862 (1988); http://dx.doi.org/10.1063/1.100378 (3 pages) | Cited 23 times

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In field‐effect transistors with gate areas less than 0.5 μm2 the effect of a single electron trapped in the gate oxide on the device resistance is easily observable. In about 10% of these devices a single thermally activated two‐state trap produces most of the low‐frequency resistance fluctuations in a wide bandwidth near room temperature. Detailed information about this single oxide interface trap can be extracted from the temperature and bias dependence of the trapping kinetics. In this work we extend this technique to locating the trap between the source and drain. With this information these traps become unique local 5–50 Å probes into submicron devices to study the local surface potential and the sensitivity to localized trapped charges under different bias conditions.
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85.30.Tv Field effect devices
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
85.30.De Semiconductor-device characterization, design, and modeling

Electron‐electron interactions and resonant tunneling in heterostructures

K. M. S. V. Bandara and D. D. Coon

Appl. Phys. Lett. 53, 1865 (1988); http://dx.doi.org/10.1063/1.100379 (3 pages) | Cited 13 times

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A Hartree–Fock approach [Z. Physik 61, 126 (1930)] is used to analyze electron‐electron interactions in heterostructures. The analysis includes estimates of the effect of electron‐electron interactions on localized states in quantum wells and resonant tunneling. Resonant tunneling is treated in a self‐consistent narrow resonance approximation. The Hartree–Fock approach yields an explicit exchange interaction subband energy shift which is completely omitted in Poisson equation treatments. Exchange effects are found to be of the same order of magnitude but opposite in sign to direct interactions at typical electron densities.
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73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.70.Gm Exchange interactions

High‐purity epitaxial indium phosphide grown by the hydride technique

M. J. McCollum, M. H. Kim, S. S. Bose, B. Lee, and G. E. Stillman

Appl. Phys. Lett. 53, 1868 (1988); http://dx.doi.org/10.1063/1.100483 (3 pages) | Cited 2 times

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Indium phosphide layers with electron mobilities at liquid‐nitrogen temperature of 91 000–125 000 cm2 /V s and carrier concentrations of 3–6×1014 cm−3 have been routinely grown by hydride vapor phase epitaxy. This 77 K mobility is significantly higher than the best previously reported for hydride vapor phase epitaxial InP. Analysis by variable temperature Hall effect, photothermal ionization spectroscopy, photoluminescence, and magnetophotoluminescence confirms the high purity of the samples. The influence of O2 on Si incorporation (injected over the In source) has also been studied. The injected oxygen did not significantly influence the silicon donor concentration.
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73.61.Ey III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.50.Dn Low-field transport and mobility; piezoresistance
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Nucleation and growth of YBaCuO on SrTiO3

B. M. Clemens, C. W. Nieh, J. A. Kittl, W. L. Johnson, J. Y. Josefowicz, and A. T. Hunter

Appl. Phys. Lett. 53, 1871 (1988); http://dx.doi.org/10.1063/1.100484 (3 pages) | Cited 35 times

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We have studied transmission electron microscopy (TEM) cross sections and plan views of YBaCuO films on SrTiO3 single‐crystal substrates at various stages of post‐deposition anneal. These TEM studies reveal in extraordinary detail the process of nucleation of epitaxial crystal structure characteristic of the films. In partially annealed samples sputtered from separate Cu, Y, and BaF2 sources, we see the 2‐4‐8 phase nucleates at the substrate interface, with the c axis parallel to the [001] substrate direction (surface normal). Upon further annealing, the 1‐2‐3 phase nucleates on this layer with the c axis parallel to each of the [100], [010], and [001] substrate directions. Rapid growth in the a‐ and b‐axis directions results in an uneven ‘‘basket weave’’ surface texture. This information is crucial to the successful control and optimization of crystal orientation and surface morphology of superconducting thin films necessary for the application of this material to multilayer structures for electronic devices.
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
81.15.Np Solid phase epitaxy; growth from solid phases
68.55.-a Thin film structure and morphology

Lanthanum gallate substrates for epitaxial high‐temperature superconducting thin films

R. L. Sandstrom, E. A. Giess, W. J. Gallagher, A. Segmüller, E. I. Cooper, M. F. Chisholm, A. Gupta, S. Shinde, and R. B. Laibowitz

Appl. Phys. Lett. 53, 1874 (1988); http://dx.doi.org/10.1063/1.100485 (3 pages) | Cited 83 times

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We demonstrate that lanthanum gallate (LaGaO3) has considerable potential as an electronic substrate material for high‐temperature superconducting films. It provides a good lattice and thermal expansion match to YBa2Cu3O7−x, can be grown in large crystal sizes, is compatible with high‐temperature film processing, and has a reasonably low dielectric constant (ϵ≂25) and low dielectric losses. Epitaxial YBa2Cu3O7−x films grown on LaGaO3 single‐crystal substrates by three techniques have zero resistance between 87 and 91 K.
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.66.Fn Inorganic compounds

Infrared fiber optics for thermometry in microwave

A. Katzir, F. Bowman, Y. Asfour, A. Zur, and C. R. Valery

Appl. Phys. Lett. 53, 1877 (1988); http://dx.doi.org/10.1063/1.100380 (3 pages) | Cited 1 time

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Electromagnetic (microwave or radio frequency) field‐induced heating is used in industrial, medical, and domestic applications. In most cases, efficient, rapid, and controllable heating is needed. A problem with this heating modality is the difficulty in gaining an accurate measurement of temperature in the presence of a strong electromagnetic field. A simple infrared fiber‐radiometer system has been developed for thermometry in the presence of these strong electromagnetic fields. The radiometer was used to measure temperatures in the range 0–70 °C, with an accuracy of ±0.5 °C. The signal obtained varied almost linearly with temperature.
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07.20.Dt Thermometers
42.81.Pa Sensors, gyros
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors

Electroluminescence in diamond‐like carbon films

S. B. Kim and J. F. Wager

Appl. Phys. Lett. 53, 1880 (1988); http://dx.doi.org/10.1063/1.100381 (2 pages) | Cited 23 times

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White electroluminescence (EL) was observed for the first time from diamond‐like carbon (DLC) films at room temperature. ac voltages in excess of 200 V were applied to a metal‐insulator‐semiconductor (i.e., DLC)‐insulator‐metal device structure to observe EL. At an applied voltage of 235 V, the brightness and efficiency were 0.5 fl and 0.002 lm/W, respectively.
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78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
78.66.-w Optical properties of specific thin films
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
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