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11 Jul 1988

Volume 53, Issue 2, pp. 83-165

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Tunable wavelength filters using λ/4‐shifted waveguide grating resonators

T. Numai, S. Murata, and I. Mito

Appl. Phys. Lett. 53, 83 (1988); http://dx.doi.org/10.1063/1.100355 (3 pages) | Cited 8 times

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We report on wide tuning range 1.5 μm wavelength filters using λ/4‐shifted waveguide grating resonators. A tuning range of a transmission resonance wavelength as wide as 42 Å by carrier injection and two‐channel wavelength signal switching was achieved.
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42.79.Ci Filters, zone plates, and polarizers
07.60.-j Optical instruments and equipment
42.79.-e Optical elements, devices, and systems
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Dj Gratings

Measurements of the polarization dependence of field‐induced refractive index changes in GaAs/AlAs multiple quantum well structures

J. Shimizu, T. Hiroshima, A. Ajisawa, M. Sugimoto, and Y. Ohta

Appl. Phys. Lett. 53, 86 (1988); http://dx.doi.org/10.1063/1.100356 (3 pages) | Cited 2 times

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The measurements of the polarization dependence of field‐induced refractive index changes in GaAs/AlAs multiple quantum wells, which are directly measured by using the modulation spectroscopy method for the TE and TM modes, are described. Clear polarization dependences, such as differences in the spectra shape and the peak wavelength, were observed. The polarization dependences originate from the different excitonic transitions: the n=1 heavy‐hole and light‐hole exciton for the TE mode and the n=1 light‐hole exciton for the TM mode. The experimental results show qualitatively good agreement with the theoretical calculation.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.79.Gn Optical waveguides and couplers

Buried double waveguide by ion implantation in quartz

P. J. Chandler, F. L. Lama, P. D. Townsend, and L. Zhang

Appl. Phys. Lett. 53, 89 (1988); http://dx.doi.org/10.1063/1.100357 (3 pages) | Cited 16 times

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Ion implantation may be used to produce barrier‐confined optical waveguides in many crystalline materials by decreasing the refractive index in the nuclear stopping region at the end of the ion’s track. In quartz this is particularly effective as the nuclear damage soon saturates at ∼5%, and also practically no index change occurs along the initial part of the track, thus enabling multiple‐energy implants to produce broad, flat barriers. We report the use of this technique in the construction of a device with two such barriers at different depths, thus producing a pair of overlayed waveguides. The profile of this composite system could not be determined by any conventional mode analysis method, and so we have extended our dark mode reflectivity technique to cope with multiple barriers. It has proved a very powerful tool for this application, able to probe at sufficient depth below the surface to supply accurate information about the entire double profile.
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42.79.Gn Optical waveguides and couplers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
61.80.Jh Ion radiation effects
61.72.up Other materials

Interaction of focused light beams with multilayer films: Optimization of magneto‐optic recording media

Z.‐M. Li and R. R. Parsons

Appl. Phys. Lett. 53, 92 (1988); http://dx.doi.org/10.1063/1.100358 (2 pages)

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Reflectance and transmittance of a light beam strongly focused on multilayer thin films are derived at far field. Using the Fourier transfer technique, the reflectance (transmittance) can be expressed in terms of the reflection (transmission) matrix for plane waves. The readout from magneto‐optic multilayer films is optimized for a strongly focused beam. It is found that when the focal spot size w0 is less than three wavelengths, the readout is significantly different from that calculated for plane waves.
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78.66.Bz Metals and metallic alloys
85.70.Sq Magnetooptical devices
42.79.Vb Optical storage systems, optical disks

AlGaAs/GaAs multiple quantum well reflection modulators grown on Si substrates

W. Dobbelaere, D. Huang, M. S. Ünlü, and H. Morkoç

Appl. Phys. Lett. 53, 94 (1988); http://dx.doi.org/10.1063/1.100359 (3 pages) | Cited 14 times

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We report for the first time large excitonic absorption at room temperature in AlGaAs/GaAs multiple quantum well structures grown on Si substrates in a p‐i‐n configuration, using photocurrent measurements. We demonstrate an optical reflection modulator which is based on the quantum‐confined Stark effect and exciton broadening with a reverse bias voltage applied across the p‐i‐n structure. A 7.7% change in the reflectivity of the device with 6 V reverse bias voltage was observed. These results demonstrate clearly that optical device quality AlGaAs/GaAs is obtainable directly on Si substrates which has great implications with regard to the monolithic integration of optical III‐V and electronic Si technology.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
42.79.Hp Optical processors, correlators, and modulators
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Selective area growth of InP/InGaAs multiple quantum well laser structures by metalorganic molecular beam epitaxy

D. A. Andrews, M. A. Z. Rejman‐Greene, B. Wakefield, and G. J. Davies

Appl. Phys. Lett. 53, 97 (1988); http://dx.doi.org/10.1063/1.100360 (2 pages) | Cited 14 times

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Selective area growth of InP/InGaAs multiple quantum well laser structures has been demonstrated in openings defined in Si3 N4 layers on InP substrates. Growth was achieved, by metalorganic molecular beam epitaxy, in openings as small as 3 μm wide, but no growth occurred on the dielectric coating. Cathodoluminescence from individual laser stripes was observed at 300 K with a wavelength determined to be 1.57 μm and at 100 K with a wavelength of 1.46 μm.
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42.55.Px Semiconductor lasers; laser diodes
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.60.Hk Cathodoluminescence, ionoluminescence

Analysis of ytterbium arsenide films grown on GaAs by molecular beam epitaxy

H. J. Richter, R. S. Smith, N. Herres, M. Seelmann‐Eggebert, and P. Wennekers

Appl. Phys. Lett. 53, 99 (1988); http://dx.doi.org/10.1063/1.100361 (3 pages) | Cited 28 times

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X‐ray photoelectron spectroscopy has been used to investigate thin single‐crystal films of ytterbium arsenide grown epitaxially on GaAs by molecular beam epitaxy. Sputter profiles indicate the absence of oxide impurities and the presence of only trivalent ytterbium, which means that the epitaxial film is composed entirely of YbAs. X‐ray diffraction analysis revealed a moderate imperfection of the crystalline quality of the YbAs and a lattice misfit of about 8×10−3 with respect to GaAs.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.30.+y Surface double layers, Schottky barriers, and work functions

Electromigration studies in amorphous and polycrystalline alloys

M. F. Chisholm, D. B. Aaron, J. D. Wiley, and J. H. Perepezko

Appl. Phys. Lett. 53, 102 (1988); http://dx.doi.org/10.1063/1.100382 (2 pages) | Cited 4 times

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We report the first direct comparisons of electromigration in amorphous and polycrystalline thin‐film samples of the same composition. Matched sample pairs of crystalline and amorphous Cu‐Ti alloys were subjected to identical test conditions and tested to failure. It was found that the amorphous alloys tested show approximately one order of magnitude improved resistance to electromigration compared to their crystalline counterparts. The improved performance is attributed to the absence of grain boundary migration paths in the amorphous samples. These findings are consistent with earlier work that showed amorphous alloys to be effective diffusion barriers in thin‐film metallization systems.
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66.30.Qa Electromigration
68.55.-a Thin film structure and morphology
61.43.Fs Glasses
61.43.-j Disordered solids

Imaging of layered semiconductor clusters by scanning tunneling microscopy: Bi2S3 on graphite and gold substrates

T. W. Jing, N. P. Ong, and C. J. Sandroff

Appl. Phys. Lett. 53, 104 (1988); http://dx.doi.org/10.1063/1.100574 (3 pages) | Cited 8 times

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We present scanning tunneling microscope images of Bi2S3 clusters deposited on the surfaces of graphite and gold. We observed similar images on both substrates, discerning the disk‐like structures expected for clusters having layered symmetry. The images of highest quality were obtained for 600‐atom clusters roughly 100 Å in lateral extent and 25 Å thick. The difficulty in characterizing clusters with smaller lateral dimension suggests that clusters must be bound to the surface with a critical adsorption energy in order to obtain stable images.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Growth and characterization of InP epilayers on ZnSehen;coated Si substrates by low‐pressure metalorganic vapor phase epitaxy

M. K. Lee, D. S. Wuu, H. H. Tung, J. H. Chang, and Y. F. Lin

Appl. Phys. Lett. 53, 107 (1988); http://dx.doi.org/10.1063/1.100383 (3 pages) | Cited 5 times

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Heteroepitaxial growth of InP on ZnSe‐coated Si substrates by low‐pressure metalorganic vapor phase epitaxy is reported for the first time. Single‐crystal InP epilayers with specular surfaces can be obtained. The ZnSe buffer layer, which is evaporated onto the Si substrate in another furnace, is effective in reducing the magnitude of strain in the InP layer. The best room‐temperature electron mobility of the undoped InP epilayer can reach 3100 cm2 /(V s) with a carrier concentration of 1.5×1015 cm−3 . It was found that the InP electron mobility is critically dependent on the ZnSe buffer‐layer thickness. The efficient photoluminescence compared with that of InP homoepitaxy indicates that the InP heteroepilayer is of high optical quality.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
73.61.Ey III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
78.55.Cr III-V semiconductors

Magnetoresistance of multiple electron gas wires at the AlGaAs/GaAs heterointerface

M. Hundhausen, T. Ichiguchi, and Y. Shiraki

Appl. Phys. Lett. 53, 110 (1988); http://dx.doi.org/10.1063/1.100384 (3 pages) | Cited 2 times

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A parallel arrangement of thin wires has been fabricated in the AlxGa1−xAs/GaAs heterostructure with holographic lithography. The observed anisotropy of the conductivity parallel versus perpendicular to the wires proves the existence of isolated conduction paths. Transverse magnetoresistance is negative at 4 K and exhibits a shoulder at a magnetic field, where the diameter of the cyclotron orbit amounts to 90 nm, which is supposed to be the effective wire width.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.61.Ey III-V semiconductors

Observation of compressive and tensile strains in InGaAs/GaAs by photoluminescence spectroscopy

M. Gal, P. J. Orders, B. F. Usher, M. J. Joyce, and J. Tann

Appl. Phys. Lett. 53, 113 (1988); http://dx.doi.org/10.1063/1.100385 (3 pages) | Cited 20 times

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Variation in the magnitude and sign of the strain in GaAs/InGaAs/GaAs single quantum wells are studied as a function of layer thickness using photoluminescence spectroscopy. It is found that as the compressively strained ternary layer relaxes with increasing thickness, a tensile strain is introduced in the GaAs capping layer. This reduces the GaAs band gap and lifts the degeneracy of the valence band, which becomes light hole in character.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Optical saturation of intersubband absorption in GaAs‐AlxGa1−xAs quantum wells

F. H. Julien, J.‐M. Lourtioz, N. Herschkorn, D. Delacourt, J. P. Pocholle, M. Papuchon, R. Planel, and G. Le Roux

Appl. Phys. Lett. 53, 116 (1988); http://dx.doi.org/10.1063/1.100386 (3 pages) | Cited 52 times

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See Also: Erratum

Show Abstract
We have investigated intersubband absorptions between the conduction ground state and the first excited state of two AlxGa1−xAs/GaAs/AlxGa1−xAs multiple quantum well structures with x=0.3 and 85 Å well width, and with x=0.57 and 96 Å well width. Small‐signal measurements show absorption peaks at 10.45 and 10.15 μm, respectively. Under an intense resonant excitation from a pulsed CO2 laser, saturation of the intersubband absorption occurred. The saturation intensity is estimated to be 340±120 kW/cm2 for the first sample and 375±120 kW/cm2 for the second. From these values, we have deduced subband decay times of the order of 10.6±3.5 ps for the first sample and 15.5±5 ps for the second.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Nonlinear subgap photoconductivity of polycrystalline silicon

W. Bock and W. Prettl

Appl. Phys. Lett. 53, 119 (1988); http://dx.doi.org/10.1063/1.100393 (3 pages) | Cited 1 time

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The photoconductance of polycrystalline silicon films at photon energies smaller than the band gap has been measured as a function of intensity applying a 1.3 μm wavelength semiconductor laser. The observed photosignal increases superlinearly at low intensities and saturates above about 1.5 W/cm−2. This distinct nonlinearity is caused by a significant energy dependence of optical to thermal cross sections of trap states in the band gap. Assuming a three‐level‐rate equation model, grain boundary trap densities were evaluated.
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73.50.Pz Photoconduction and photovoltaic effects
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
71.20.Mq Elemental semiconductors

Impurity segregation correlated with microstructure in buried oxide silicon‐on‐insulator structures

M. Margarida Puga and Dorothea E. Burk

Appl. Phys. Lett. 53, 122 (1988); http://dx.doi.org/10.1063/1.100387 (3 pages) | Cited 1 time

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During the formation of silicon‐on‐insulator substrates by high‐dose oxygen implantation, the fixturing in the ion implanter may be sputtered onto the substrate by the oxygen beam. Large densities of heavy metal contaminants are introduced into the top silicon film and buried oxide, and remain there during epitaxial layer growth and device fabrication. These contaminants can form deep level traps by complexing with boron or oxygen, precipitate out in the gate oxide surface, remain interstitially or substitutionally in the top silicon layer, and/or decorate dislocations. A correlation is shown between the microstructure and defects, and the distribution of undesired impurities in the oxygen‐implanted silicon‐on‐insulator substrates.
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68.35.Fx Diffusion; interface formation
66.30.J- Diffusion of impurities
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.55.-a Thin film structure and morphology

GaAs light‐emitting diodes with n‐i‐p‐i active layers fabricated by selective contact diffusion

D. E. Ackley, J. Mantz, H. Lee, N. Nouri, and C.‐L. Shieh

Appl. Phys. Lett. 53, 125 (1988); http://dx.doi.org/10.1063/1.100419 (3 pages) | Cited 5 times

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GaAs/AlGaAs light‐emitting diodes (LED’s) with nipi active regions have been successfully fabricated using sequential n and p diffusions to selectively contact the doping superlattice. By doing sequential patterned sulfur and zinc diffusions, a lateral injection LED can be readily fabricated. Excellent current‐voltage characteristics were achieved with reverse breakdown voltages in excess of 9.5 V, indicating that the selective contacts were nearly optimum. cw outputs of 500 μW at 50 mA drive current have been observed. The LED output spectrum was seen to tune with applied bias at a rate of about 650 meV/V at low temperatures.
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85.60.Jb Light-emitting devices
85.30.De Semiconductor-device characterization, design, and modeling
85.30.Kk Junction diodes

Structural defect related donor‐bound exciton spectra in CdTe epitaxial films

Z. C. Feng, M. G. Burke, and W. J. Choyke

Appl. Phys. Lett. 53, 128 (1988); http://dx.doi.org/10.1063/1.100365 (3 pages) | Cited 18 times

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In previous luminescence studies on CdTe epitaxial films, a line Dμ at 1.593 eV has been associated with the recombination of exciton bound to a neutral donor. We have new evidence to suggest that Dμ cannot be associated with a simple donor impurity, but should be associated with donor‐like structural defects or impurity‐defect complexes.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.20.Hb Impurity and defect levels; energy states of adsorbed species
78.55.Et II-VI semiconductors

Time‐dependent investigation of the resonant tunneling in a double‐barrier quantum well

H. Guo, K. Diff, G. Neofotistos, and J. D. Gunton

Appl. Phys. Lett. 53, 131 (1988); http://dx.doi.org/10.1063/1.100349 (3 pages) | Cited 48 times

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The temporal development of the wave function within a double‐barrier quantum well is studied by numerically solving the time‐dependent Schrödinger equation. One‐dimensional AlGaAs‐GaAs‐AlGaAs and AlAs‐GaAs‐AlAs structures are considered in this study. The build‐up time and the decay constant of the resonant probability amplitude have been computed as functions of the system parameters. In general, these times are considerably different in magnitude. The amplitude of the wave function trapped inside the well is found to depend crucially on the initial energy spread. The results are in good agreement with those of a recent photoluminescence experiment.
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.55.Cr III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Sulfur as a surface passivation for InP

R. Iyer, R. R. Chang, and D. L. Lile

Appl. Phys. Lett. 53, 134 (1988); http://dx.doi.org/10.1063/1.100575 (3 pages) | Cited 87 times

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We have investigated the use of liquid and gas phase sulfur pretreatment of the surface of InP as a way to form a near ideal passivated surface prior to chemical vapor deposition of SiO2 . Results of high‐frequency and quasi‐static capacitance‐voltage measurements as well as enhancement mode insulated gate field‐effect transistor (FET) transconductance and drain current stability studies all support the efficacy of this approach for metal‐insulator‐semiconductor application of this semiconductor. In particular we have measured surface state values in the range of 1010 to a few 1011 cm−2  eV−1 and enhancement mode FET drain current drifts of <5% over a 12 h test period.
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81.65.-b Surface treatments
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Unusual low‐temperature behavior of Fermi level movement at the Sb/GaAs interface

Renyu Cao, K. Miyano, I. Lindau, and W. E. Spicer

Appl. Phys. Lett. 53, 137 (1988); http://dx.doi.org/10.1063/1.100417 (3 pages) | Cited 4 times

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The temperature dependence of the development of the Sb/GaAs electronic properties has been found to be quite small, compared to that seen with a large number of metal/GaAs interfaces studied previously. This has been correlated with the relatively small change in interface morphology due to reducing the temperature. The interface morphology and the Fermi level movement at the Sb/GaAs(110) interface were studied using photoelectron spectroscopy at room temperature and low temperature (80 K). The Sb/GaAs interface is uniform and abrupt at two temperatures. Two distinct Fermi level pinning positions are observed: 0.75 eV for n‐type GaAs and 0.5 eV for p‐type GaAs above the valence‐band maximum independent of the temperature. The results are discussed in terms of mechanisms of Schottky barrier formation.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
68.35.B- Structure of clean surfaces (and surface reconstruction)
73.30.+y Surface double layers, Schottky barriers, and work functions
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Specular CuInSe2 films for solar cells

R. W. Birkmire and B. E. McCandless

Appl. Phys. Lett. 53, 140 (1988); http://dx.doi.org/10.1063/1.100576 (2 pages) | Cited 8 times

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Specular CuInSe2 films suitable for solar cell devices have been produced by etching the as‐deposited films in an aqueous bromine solution. Structural analysis and device results indicate that the CuInSe2 films are compositionally and electronically homogeneous even though the films are deposited in two distinct layers. The implications for improvements in CuInSe2 cell and module performance are discussed.
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84.60.Jt Photoelectric conversion
81.65.-b Surface treatments
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.-a Thin film structure and morphology

Metalorganic chemical vapor deposition and characterization of the In‐As‐Sb‐Bi material system for infrared detection

T. P. Humphreys, P. K. Chiang, S. M. Bedair, and N. R. Parikh

Appl. Phys. Lett. 53, 142 (1988); http://dx.doi.org/10.1063/1.100350 (3 pages) | Cited 17 times

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We report the first results pertaining to the growth by metalorganic chemical vapor deposition of InSb1−xBix (0.01<x<0.14) and InAs1−x−ySbyBix with 0.5<y<0.7 and 0.01<x<0.04 epitaxial films on both semi‐insulating GaAs(100) and InSb(100) substrates. Electrical measurements for the undoped InSb0.99Bi0.01 epitaxial layers show a room‐temperature mobility of 20 215 cm2/V s with a carrier concentration of ND−NA ∼1016 cm−3. A degradation in the surface morphology of the InSb1−xBix and InAsSbBi epitaxial films correspond to an increase in the InBi mole fraction was observed. We attribute this deterioration in surface morphology to the formation of polycrystalline phases of Bi and the growth of metallic bismuth‐antimony crystallites.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.61.Ey III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.35.B- Structure of clean surfaces (and surface reconstruction)

Schottky barrier instabilities due to contamination

N. Newman, Z. Liliental‐Weber, E. R. Weber, J. Washburn, and W. E. Spicer

Appl. Phys. Lett. 53, 145 (1988); http://dx.doi.org/10.1063/1.100351 (3 pages) | Cited 7 times

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We reported here a systematic study of the annealing‐induced changes in the barrier height of Schottky barrier diodes fabricated on atomically clean and contaminated surfaces. Al, Ag, Au, and Cr/GaAs(110) diodes were fabricated by in situ deposition on clean n‐type GaAs(110) surfaces prepared by cleavage in ultrahigh vacuum and on contaminated surfaces prepared by cleavage and exposure to the atmosphere for ∼1–2 h. This study demonstrates that the as‐deposited barrier height and the annealing‐induced changes in the barrier height of diodes formed with an interfacial layer of contamination are distinctly different from the characteristics of diodes formed on clean semiconductor surfaces. The presence of an interfacial layer of contamination is found to significantly degrade the stability of the diode’s barrier height to annealing.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
73.40.Ei Rectification
85.30.Hi Surface barrier, boundary, and point contact devices

Pt‐coated substrate effect on oxide superconductive films in low‐temperature processing

S. Hatta, H. Higashino, K. Hirochi, H. Adachi, and K. Wasa

Appl. Phys. Lett. 53, 148 (1988); http://dx.doi.org/10.1063/1.100352 (3 pages) | Cited 9 times

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Excellent films of a high Tc oxide superconductor were easily produced on Pt‐coated substrates at 650 °C. The film superconductivity was significantly improved by the Pt buffer layer. The c axis of the superconductive film was preferentially oriented perpendicularly to the plane with the crystalline oriented Pt coating layer.
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74.78.-w Superconducting films and low-dimensional structures
81.15.Cd Deposition by sputtering
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
74.70.-b Superconducting materials other than cuprates

Tunneling images of a high Tc superconducting Y1Ba2Cu3O7−x ceramic

A. M. Okoniewski, J. E. Klemberg‐Sapieha, and A. Yelon

Appl. Phys. Lett. 53, 151 (1988); http://dx.doi.org/10.1063/1.100577 (2 pages) | Cited 1 time

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Tunneling images of an Y1Ba2Cu3O7−x high Tc superconductor have been obtained in air. Slow scanning images show the roughness of surface in agreement with scanning electron microscope observations. Fast scanning pictures show the periodic structure with dimensions comparable to those of the bulk layered perovskite unit cell of the material.
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
68.35.B- Structure of clean surfaces (and surface reconstruction)
74.50.+r Tunneling phenomena; Josephson effects
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