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14 Nov 1988

Volume 53, Issue 20, pp. 1891-1989

Page 1 of 2 Pages Next Page | Jump to Page

Two‐photon processes in defect formation by excimer lasers in synthetic silica glass

K. Arai, H. Imai, H. Hosono, Y. Abe, and H. Imagawa

Appl. Phys. Lett. 53, 1891 (1988); http://dx.doi.org/10.1063/1.100362 (3 pages) | Cited 76 times

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Defect formation in dehydrated silica glasses was investigated using various excimer lasers with different energies. The ArF laser (6.4 eV) generates the E′ center more effectively than the KrF laser (5.0 eV), while the XeCl laser (4.0 eV) generated no centers. Defect generation was found to be proportional to the square of the laser photon density, indicating that it occurs dominantly due to a two‐photon process which makes band‐to‐band excitation possible. The E′ center probably originated from oxygen‐deficient centers. Contributions to the E′ center formation from a process involving direct absorption at the sites of intrinsic defects in SiO2 glass were discussed on the basis of the excitation energy dependence and a comparison with the effect of a low‐pressure mercury lamp.
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61.72.Bb Theories and models of crystal defects
61.72.jn Color centers
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics

Stability of phase locking in coupled semiconductor laser arrays

H. G. Winful and S. S. Wang

Appl. Phys. Lett. 53, 1894 (1988); http://dx.doi.org/10.1063/1.100363 (3 pages) | Cited 75 times

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It is shown that amplitude phase coupling (as described by the linewidth enhancement factor α) leads to unstable phase locking in semiconductor laser arrays with evanescent coupling.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Spatial and frequency dependence of four‐wave mixing in broad‐area diode lasers

M. Lucente, J. G. Fujimoto, and G. M. Carter

Appl. Phys. Lett. 53, 1897 (1988); http://dx.doi.org/10.1063/1.100364 (3 pages) | Cited 10 times

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By injecting two external optical beams into a broad‐area laser diode, four‐wave mixing is generated via gain nonlinearities in the device. The nonlinear signals are observed by spectrally analyzing the transverse far‐field profile of the emission from the device. By varying the injection angle and oscillation wavelength of one of the injected beams, the spatial and frequency dependence of this nonlinear process is measured. The results support a spatially dependent dynamic carrier concentration model which includes the effects of carrier diffusion. These measurements provide a direct determination of the ambipolar diffusion constant in the device D=9.5 cm2/s.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Injection locking characteristics of a 1 W broad stripe laser diode

L. Goldberg and M. K. Chun

Appl. Phys. Lett. 53, 1900 (1988); http://dx.doi.org/10.1063/1.100366 (3 pages) | Cited 24 times

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Single narrow far‐field lobe emission is observed in an injection‐locked high‐power broad stripe laser. Lobe widths below 1.3 times the diffraction limit for the 160‐μm‐wide stripe were observed for power levels up to 1.0 W. Decrease in the power contained within the narrow lobe for high laser bias currents is observed and is attributed to self‐focusing effects in the active region. Small‐signal external power gain of 21 dB was measured.
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42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Simultaneous two‐band laser emissions and three primary color outputs in the superradiant mode from dye mixtures

Y. Saito, A. Nomura, and T. Kano

Appl. Phys. Lett. 53, 1903 (1988); http://dx.doi.org/10.1063/1.100367 (2 pages) | Cited 5 times

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A dye mixture of coumarin 460, disodium fluorescein, and nile blue 690 perchrolate was excited by a nitrogen laser. Simultaneous laser emissions in two spectra regions (blue and green, green and red, red and blue) were obtained in each of the two dye mixtures. Furthermore, simultaneous three primary color outputs in a superradiant mode from three dye mixtures were observed.
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42.55.Mv Dye lasers
78.45.+h Stimulated emission

Modulation and spectral properties of semi‐insulating blocked planar buried‐heterostructure distributed feedback lasers

G. Eisenstein, U. Koren, A. H. Gnauck, R. S. Tucker, T. L. Koch, P. J. Corvini, and B. I. Miller

Appl. Phys. Lett. 53, 1905 (1988); http://dx.doi.org/10.1063/1.100368 (3 pages) | Cited 3 times

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We describe the spectral and high‐speed modulation properties of 1.3‐μm semi‐insulating blocked planar buried‐heterostructure distributed feedback lasers. We demonstrate the first single‐frequency lasers with the capability for large‐signal modulation at a bit rate as high as 16 Gb/s. The lasers exhibit a relatively small increase in spectral linewidth due to chirp even under high‐speed modulation conditions.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes

Intrinsically resonant traveling‐wave Y‐fed directional couplers at high frequency

Y. Bourbin, M. Papuchon, A. Enard, M. Werner, and C. Moronvalle

Appl. Phys. Lett. 53, 1908 (1988); http://dx.doi.org/10.1063/1.100486 (3 pages)

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Traveling‐wave Y‐fed directional couplers are shown to have a high‐frequency bandpass response because of the inherent velocity mismatch between the optical and electrical waves. Furthermore, if their characteristic parameters are suitably chosen, it is possible to achieve an intrinsic resonance by using uniform electrodes. These principles are theoretically investigated and experimentally demonstrated at center frequencies up to 8.5 GHz for titanium indiffused in lithium niobate (Ti:LiNbO3 ) waveguides at 1.3 μm wavelength.
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42.79.Gn Optical waveguides and couplers
78.20.-e Optical properties of bulk materials and thin films
42.82.-m Integrated optics

Free‐electron cyclotron resonance lasers

Changbiao Wang

Appl. Phys. Lett. 53, 1911 (1988); http://dx.doi.org/10.1063/1.100342 (3 pages) | Cited 2 times

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In this letter, we propose and analyze an oscillator configuration of a new laser, called free‐electron cyclotron resonance laser, which basically converts synchrotron radiation to a coherent oscillation. In this laser, unlike the harmonic gyrotron based on the interaction of axially propagating electromagnetic wave with an electron beam, light wave propagates transverse to an electron beam. It is shown that the device can generate light output at a wavelength of 10.6 μm or shorter by the interaction of only about a 12 MeV electron beam with extremely high harmonics. Expressions for harmonic linear electron efficiency and start‐up current are obtained.
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41.60.Cr Free-electron lasers
41.75.Ht Relativistic electron and positron beams
41.60.-m Radiation by moving charges
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Etching mechanisms of polymers in oxygen microwave multipolar plasmas

J. Pelletier, Y. Arnal, and O. Joubert

Appl. Phys. Lett. 53, 1914 (1988); http://dx.doi.org/10.1063/1.100343 (3 pages) | Cited 15 times

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A parametric study of polymer etching in an oxygen microwave multipolar plasma with independent rf wafer biasing is reported. The etch rate evolution as a function of atomic oxygen concentration, measured by actinometry, indicates a monolayer adsorption kinetics for the photoresist/oxygen system. Furthermore, a step‐like variation in the etch rate with ion bombardment energy is observed. In the low‐energy range, where sputtering effects are negligible, ion‐induced chemical etching is the main etching component. In the high‐energy range, an additional etching which exhibits sputtering behavior arises.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Plateau and kink in P profiles diffused into Si: A result of strong bimolecular recombination?

W. B. Richardson and B. J. Mulvaney

Appl. Phys. Lett. 53, 1917 (1988); http://dx.doi.org/10.1063/1.100344 (3 pages) | Cited 10 times

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A simplified five‐species nonequilibrium kinetic model for phosphorus diffusion in silicon is presented. The resulting system of evolution equations is of a simple reaction‐diffusion form with constant diffusivities. Using first‐order thermodynamic estimates for reaction rates, the phosphorus profile after a 10 min predeposition shows the expected tail. However, only when the bimolecular generation‐recombination rate is significantly increased does a kink‐plateau result. This suggests that recombination may be the dominant factor in producing the known nonlinearity.
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66.30.J- Diffusion of impurities
66.30.Lw Diffusion of other defects

Intrinsic strain at lattice‐matched Ga0.47In0.53As/InP interfaces as studied with high‐resolution x‐ray diffraction

J. M. Vandenberg, M. B. Panish, H. Temkin, and R. A. Hamm

Appl. Phys. Lett. 53, 1920 (1988); http://dx.doi.org/10.1063/1.100345 (3 pages) | Cited 33 times

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High‐resolution x‐ray studies of Ga0.47In0.53As/InP superlattices reveal, for the first time, the presence of an intrinsic interfacial strain at heteroepitaxial interfaces. This strain is produced by an asymmetric ordering of the atomic layers in the leading and trailing interfaces of each quantum well as the result of the normal growth sequence during gas source molecular beam epitaxy.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Gy Mechanical properties; surface strains
68.35.B- Structure of clean surfaces (and surface reconstruction)

Direct observation of extended monolayer flat islands at metalorganic vapor phase epitaxy grown Al0.5Ga0.5As‐GaAs single quantum well interfaces

F. J. Stützler, S. Fujieda, M. Mizuta, and K. Ishida

Appl. Phys. Lett. 53, 1923 (1988); http://dx.doi.org/10.1063/1.100346 (3 pages) | Cited 13 times

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Extended monolayer flat islands occurring at the heterointerface of metalorganic vapor phase epitaxy grown, growth interrupted Al0.5Ga0.5 As‐GaAs single quantum wells are directly observed for the first time by spatially resolved cathodoluminescence (CL). CL images of growth islands with a lateral size of between 500 nm and 2 μm are shown. The photoluminescence emission peak shows splitting corresponding to exciton transitions in the growth islands of the quantum well with a difference in the well thickness of one atomic layer.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Cr III-V semiconductors
78.60.Hk Cathodoluminescence, ionoluminescence

Selectively Se‐doped AlGaAs/GaAs heterostructures with reduced DX center concentrations grown by molecular beam epitaxy

Tomonori Ishikawa, Takeshi Maeda, and Kazuo Kondo

Appl. Phys. Lett. 53, 1926 (1988); http://dx.doi.org/10.1063/1.100347 (2 pages) | Cited 10 times

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We studied the DX center concentration in Se‐doped AlxGa1−x As layers grown by molecular beam epitaxy. In the shallow to DX transition region around x=0.2, the concentration of DX centers was far lower when compared to that of Si‐doped layers. We applied Se‐doped AlGaAs layers to selectively doped AlGaAs/GaAs heterostructures to avoid the influence of DX centers. By optimizing growth conditions, electron mobilities as high as 74 000 cm2 /V s (x=0.26) and 44 000 cm2 /V s (x=0.19) were achieved at 77 K for heterostructures with 60‐Å‐thick spacer layers.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.50.Dn Low-field transport and mobility; piezoresistance
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Electron diffusion length in rapid thermal processed p‐type silicon

Vu Thuong Quat, W. Eichhammer, and P. Siffert

Appl. Phys. Lett. 53, 1928 (1988); http://dx.doi.org/10.1063/1.100348 (3 pages) | Cited 14 times

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Electron diffusion length in p‐type virgin silicon has been measured by the surface photovoltage method after rapid thermal processing as a function of process time duration and process temperature. The results obtained are consistent with a model involving defects acting as a single dominant recombination center induced in the bulk. This recombination center is responsible for the severe degradation of the diffusion length, even at process temperatures as low as 600 °C. An activation energy of 1.48±0.28 eV is found for the center introduction rate. The work shows that the diffusion length measurement is a very sensitive tool in the study of rapid thermal process induced recombination centers in the bulk, with direct correlation to device performance.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
85.30.De Semiconductor-device characterization, design, and modeling
81.40.Rs Electrical and magnetic properties related to treatment conditions
71.55.Ht Other nonmetals

Exchange interactions in quantum well subbands

K. M. S. V. Bandara, D. D. Coon, Byungsung O, Y. F. Lin, and M. H. Francombe

Appl. Phys. Lett. 53, 1931 (1988); http://dx.doi.org/10.1063/1.100327 (3 pages) | Cited 99 times

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See Also: Erratum

Show Abstract
It is shown that exchange interactions in the two‐dimensional electron gas in quantum wells could cause observable effects on subband energies and intersubband transition energies. In the case of doped quantum wells, the intrasubband exchange interaction can produce an energy shift which is substantially larger than the direct Coulomb energy shift. Theoretical estimates of such shifts are compared with experimental measurements of the infrared photoconductivity of multiple quantum well AlGaAs/GaAs structures with wells doped at about 1018 cm−3.
Show PACS
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
71.70.Gm Exchange interactions
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.50.Pz Photoconduction and photovoltaic effects

Infrared spectroscopy of thin silicon dioxide on silicon

J. E. Olsen and F. Shimura

Appl. Phys. Lett. 53, 1934 (1988); http://dx.doi.org/10.1063/1.100487 (3 pages) | Cited 49 times

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An infrared technique has been devised to study the structure of very thin films on substrates of high refractive index. Optical spectrum amplification of three orders of magnitude is theoretically available. A series of refractive index enhanced multiple internal reflection spectra reveals a clear thickness‐dependent structural transformation in thermal SiO2. The spectra suggest a shift in ring statistics, from smaller to larger, with increasing distance from the oxide‐silicon interface.
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78.66.Jg Amorphous semiconductors; glasses
78.30.Hv Other nonmetallic inorganics
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)

Two‐dimensional exciton transport in GaAs/GaAlAs quantum wells

H. Hillmer, S. Hansmann, A. Forchel, M. Morohashi, E. Lopez, H. P. Meier, and K. Ploog

Appl. Phys. Lett. 53, 1937 (1988); http://dx.doi.org/10.1063/1.100328 (3 pages) | Cited 34 times

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Using microstructured masks and picosecond spectroscopy we have investigated the lateral expansion of two‐dimensional excitons in GaAs/GaAlAs quantum wells with very high spatial resolution (∼0.1 μm). The exciton motion can be described by an isothermal diffusion which strongly depends on the well width. The increase of the excitonic diffusivity with increasing well width observed experimentally is attributed to the decrease of the interface roughness scattering probability.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.55.Cr III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Thermal and electric field induced defects in InP metal‐insulator‐semiconductor structures

C. C. Tin, P. A. Barnes, and W. C. Neely

Appl. Phys. Lett. 53, 1940 (1988); http://dx.doi.org/10.1063/1.100329 (3 pages) | Cited 8 times

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The presence of deep levels in several samples of InP metal‐insulator‐semiconductor (MIS) structures was studied using the deep level transient spectroscopy technique. The InP MIS structures were fabricated using three different methods of oxide formation, two of which are chemical oxides and the third is plasma‐grown oxide. Defect levels ranging from (Ec−0.22) to (Ec−0.6) eV were observed in the samples. However, the levels at about (Ec−0.22) and (Ec−0.35) eV were detected only after increasing the reverse‐bias voltage to −2 V at a temperature of about 390 K. This phenomenon occurred in all the samples studied, irrespective of the method of oxidation. The appearance of the peaks corresponding to the shallower traps is irreversible and may explain the performance instability commonly encountered in InP MIS‐based devices.
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71.55.Eq III-V semiconductors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors

Contact resistance to undoped and phosphorus‐doped hydrogenated amorphous silicon films

Jerzy Kanicki

Appl. Phys. Lett. 53, 1943 (1988); http://dx.doi.org/10.1063/1.100330 (3 pages) | Cited 23 times

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An extensive systematic study of contact properties to as‐deposited undoped and phosphorus‐doped hydrogenated amorphous silicon (a‐Si:H) in metal/a‐Si:H diode configuration has shown that the magnitude of the contact resistance can be adjusted to some degree by the proper choice of metal work function. It is also obvious from our experimental data that the film doping (or bulk resistivity) is the most important factor in controlling the value of contact resistance for a given metallization. The lowest contact resistance values for both undoped and doped films have been achieved for Eu, Y, Sc, and Mg. Reasonable values for heavily doped films have also been obtained for Ti, Ta, Mo, and Al contacts. We have also shown, for the first time, that a further decrease of contact resistance can be achieved by increasing the doping efficiency of the phosphorus‐doped layer.
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73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Pseudomorphic InGaAs base ballistic hot‐electron device

K. Seo, M. Heiblum, C. M. Knoedler, W‐P. Hong, and P. Bhattacharya

Appl. Phys. Lett. 53, 1946 (1988); http://dx.doi.org/10.1063/1.100331 (3 pages) | Cited 8 times

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We report the first successful incorporation of a pseudomorphic InGaAs base in a ballistic hot‐electron device. The device, with a 28‐nm‐thick In0.15Ga0.85As base, had a collector‐base breakdown voltage of 0.55 V and a maximum current transfer ratio of 0.89 at 4.2 K, considerably higher than the 0.75 in a comparable GaAs‐base device. Electron energy spectroscopy measurements revealed that at least 30% of the injected electrons traversed the InGaAs base ballistically, causing a strong modulation in the injected currents into the quantized base. The Γ‐L valley separation in the strained In0.15Ga0.85As was estimated to be about 410 meV.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Gk Tunneling
73.50.Bk General theory, scattering mechanisms
73.61.Ey III-V semiconductors

Ambipolar diffusion length measurements on hydrogenated amorphous silicon p‐i‐n structures

I. Balberg, A. E. Delahoy, and H. A. Weakliem

Appl. Phys. Lett. 53, 1949 (1988); http://dx.doi.org/10.1063/1.100332 (3 pages) | Cited 10 times

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The determination of the ambipolar diffusion length within the i layer of a p‐i‐n structure made of hydrogenated amorphous silicon is reported for the first time. It is shown that this important parameter can be determined by measurements carried out on the entire structure. One finds for a typical cell structure that the measured diffusion length is 10–20% smaller than the true i‐layer value.
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73.50.Pz Photoconduction and photovoltaic effects
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
84.60.Jt Photoelectric conversion
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Trends of deep level electron traps in AlxGa1−xAs grown by molecular beam epitaxy

R. A. Puechner, D. A. Johnson, and G. N. Maracas

Appl. Phys. Lett. 53, 1952 (1988); http://dx.doi.org/10.1063/1.100333 (3 pages) | Cited 7 times

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Deep level transient spectroscopy is used to study one of the deep electron traps commonly seen in AlxGa1−xAs grown by molecular beam epitaxy (MBE). This trap, having the largest capture cross section of the commonly observed levels in MBE material, is measured in samples with Al composition varying from 8 to 40%. It is shown that the activation energy remains fixed with respect to the valence band, over the composition range studied. The trap is tentatively identified as a group III related vacancy. The effects of varying MBE growth parameters are discussed.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.61.Ey III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Molecular beam study of laser‐induced chemical etching of Si(111) by chlorine molecules

Yu‐Lin Li, Zhuang‐Jian Zhang, Qi‐Ke Zheng, Zhong‐Kao Jin, Zhen‐Kai Wu, and Qi‐Zong Qin

Appl. Phys. Lett. 53, 1955 (1988); http://dx.doi.org/10.1063/1.100334 (3 pages) | Cited 6 times

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Chemical etching of Si(111) surface by chlorine molecules under 355 and 560 nm irradiation has been studied using a continuous wave supersonic molecular beam. Only two products, SiCl and SiCl2, were observed. The translational energy distributions of the gaseous products have been measured as a function of laser fluence, and can be fitted with Maxwell–Boltzmann distributions. Study on the effect of translational energy of incident chlorine molecules on the reaction rate is also presented for the first time.
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81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

Optimization of quantum well materials and structures for excitonic electroabsorption effects

S. Nojima and K. Wakita

Appl. Phys. Lett. 53, 1958 (1988); http://dx.doi.org/10.1063/1.100335 (3 pages) | Cited 24 times

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A method to enhance excitonic electroabsorption effects in semiconductor quantum well structures is presented, in which the well thickness and the band gap of the quantum well materials are optimized so that the figure of merit for electroabsorption is maximized. Application of this method to InGaAsP/InP and InGaAlAs/InAlAs quantum well structures enhances this figure of merit by 60 and 16 times, respectively, as compared with that of conventional InGaAs/InP and InGaAs/InAlAs quantum well structures.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
85.60.-q Optoelectronic devices
71.35.-y Excitons and related phenomena

High photoconductive gain in lateral InAsSb strained‐layer superlattice infrared detectors

S. R. Kurtz, R. M. Biefeld, L. R. Dawson, I. J. Fritz, and T. E. Zipperian

Appl. Phys. Lett. 53, 1961 (1988); http://dx.doi.org/10.1063/1.100336 (3 pages) | Cited 21 times

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Both large photoconductive gain and long wavelength photoresponse were observed in lateral photodetectors constructed from type II, InAsSb, strained‐layer superlattices. In a novel, four‐layer superlattice, gain values as large as 90 are reported with a long wavelength cutoff of 8.7 μm at 77 K. The gain is sensitive to the structure and composition of the superlattice, and the sweepout of minority carriers is eliminated with the appropriate contacts.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
73.50.Pz Photoconduction and photovoltaic effects
73.61.Ey III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
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