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21 Nov 1988

Volume 53, Issue 21, pp. 1999-2113

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Observation of optical field induced first‐order electric Freedericksz transition and electric bistability in a parallel aligned nematic liquid‐crystal film

J. J. Wu, Gan‐Sing Ong, and Shu‐Hsia Chen

Appl. Phys. Lett. 53, 1999 (1988); http://dx.doi.org/10.1063/1.100323 (3 pages) | Cited 10 times

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Optical field induced first‐order electric Freedericksz transition and electric bistability in a homogeneously aligned nematic film is first observed. It is experimentally demonstrated that an applied optical field can transform the electric Freedericksz transition from second order to first order. The molecular reorientation as a function of electric field is then characterized by a hysteresis loop which exhibits the electric bistability. The results are in good agreement with theoretical predictions.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
78.66.-w Optical properties of specific thin films
78.20.Jq Electro-optical effects

Optical third‐harmonic generation from poly(2,5‐thienylene vinylene) thin films

Toshikuni Kaino, Ken‐ichi Kubodera, Hideki Kobayashi, Takashi Kurihara, Shogo Saito, Tetsuo Tsutsui, Shizuo Tokito, and Hideyuki Murata

Appl. Phys. Lett. 53, 2002 (1988); http://dx.doi.org/10.1063/1.100416 (3 pages) | Cited 31 times

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Third‐harmonic generation measurements have been made on poly(2,5‐thienylene vinylene) (PTV) thin films. The third‐order optical susceptibility χ(3) was evaluated to be 3.2×10−11 esu at 1.85 μm wavelength. It was also revealed that in weakly iodine‐doped PTV thin films, χ(3) was almost the same value as that of nondoped films. χ(3) at a shorter wavelength region was expected to be much higher than that obtained in this work due to the resonant effect.
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78.66.Qn Polymers; organic compounds
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Surface laser damage thresholds determined by photoacoustic deflection

S. Petzoldt, A. P. Elg, M. Reichling, J. Reif, and E. Matthias

Appl. Phys. Lett. 53, 2005 (1988); http://dx.doi.org/10.1063/1.100491 (3 pages) | Cited 40 times

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The technique of intensity dependent photoacoustic probe beam deflection has been applied to the determination of surface damage thresholds. We take advantage of an unambiguous correlation between the degree of laser damage and the energy in the generated acoustic pulse. The high sensitivity of this method, cross checked by measuring scatter losses in reflection, is independent of any surface optical properties. As an example for optical materials, damage thresholds for MgF2 and CaF2 have been determined to be about 1.4 GW/cm2 , and for LiF to be about 0.2 GW/cm2 .
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
42.87.-d Optical testing techniques
42.25.Dd Wave propagation in random media
42.25.Fx Diffraction and scattering
42.25.Ja Polarization
82.80.Kq Energy-conversion spectro-analytical methods (e.g., photoacoustic, photothermal, and optogalvanic spectroscopic methods)

Intensity dependence of picosecond nonlinear response time of polydiacetylene

Lina Yang, R. Dorsinville, P. P. Ho, W. K. Zou, N. L. Yang, and R. R. Alfano

Appl. Phys. Lett. 53, 2008 (1988); http://dx.doi.org/10.1063/1.100324 (3 pages) | Cited 10 times

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The relaxation time of the transient degenerate four‐wave mixing grating in 4‐butoxycarbonylmethylurethane polydiacetylene in polymethylmethacrylate matrix films has been found to be laser energy fluence dependent. This phenomenon is attributed to a transient reversible light‐induced structure change in polydiacetylene films, involving a cooperative effect originating from side‐chain intramolecular hydrogen bonding.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.66.Qn Polymers; organic compounds

Nonlinear optical processes in a polymer waveguide: Grating coupler measurements of electronic and thermal nonlinearities

R. Burzynski, B. P. Singh, P. N. Prasad, R. Zanoni, and G. I. Stegeman

Appl. Phys. Lett. 53, 2011 (1988); http://dx.doi.org/10.1063/1.100325 (3 pages) | Cited 17 times

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We report here the first clear demonstration of intensity‐dependent phase shift due to electronic nonlinearity in a nonlinear polymer waveguide in which propagation distances over 5 cm have been achieved with total attenuation of ∼1.2 cm−1 . Intensity‐dependent coupling angle, intensity‐dependent coupling efficiency, and limiter action behavior have been observed in the polyamic acid waveguide using grating excitation with 400 fs, 80 ps, and 10 ns pulses. A nonlinear grating coupler analysis identifies the subpicosecond and picosecond processes with electronic nonlinearity, but the dominant effect in the nanosecond experiment is due to thermal nonlinearity derived from weak absorptions. The magnitude and sign of n2 of electronic nonlinearity are measured.
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42.79.Gn Optical waveguides and couplers

Visible BaB2O4 optical parametric oscillator pumped at 355 nm by a single‐axial‐mode pulsed source

Y. X. Fan, R. C. Eckardt, R. L. Byer, J. Nolting, and R. Wallenstein

Appl. Phys. Lett. 53, 2014 (1988); http://dx.doi.org/10.1063/1.100492 (3 pages) | Cited 43 times

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A visible BaB2O4 optical parametric oscillator (OPO) pumped by a single‐axial‐mode 355‐nm source has been demonstrated. An average output power of 140 mW with a signal wave conversion efficiency of 13% and an idler conversion efficiency of 11% for a total conversion efficiency of 24% has been achieved. The oscillator has continuously tuned from 412 nm to 2.55 μm limited by the infrared transmission range of the crystal. Through injection seeding we obtained single‐axial‐mode OPO operation with a corresponding OPO linewidth of less than 3 GHz.
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07.60.-j Optical instruments and equipment
42.79.-e Optical elements, devices, and systems

Recording a reversible photoinduced birefringence in a lightguide

T. Lückemeyer and H. Franke

Appl. Phys. Lett. 53, 2017 (1988); http://dx.doi.org/10.1063/1.100326 (2 pages) | Cited 23 times

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Planar waveguides of the azo dye methyl‐red in poly(methyl methacrylate) were spin coated on quartz glass. The transmission of simultaneously launched TE and TM modes (wavelength of the guided light: λ=633 nm) is studied under exposure to blue laser light (λ=488 nm). The guided light may be modulated by the exposing light at low speeds.
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42.79.Vb Optical storage systems, optical disks
42.79.Gn Optical waveguides and couplers
78.20.Fm Birefringence

Spectral linewidth reduction in metalorganic vapor phase epitaxy grown 1.5 μm separate‐confinement‐heterostructure quantum well distributed feedback laser diodes

Shinji Takano, Tatsuya Sasaki, Hirohito Yamada, Mitsuhiro Kitamura, and Ikuo Mito

Appl. Phys. Lett. 53, 2019 (1988); http://dx.doi.org/10.1063/1.100307 (2 pages) | Cited 6 times

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Spectral linewidth reduction in 1.5 μm InGaAs/InGaAsP separate‐confinement‐heterostructure quantum well distributed feedback laser diodes (SCH‐QW‐DFB LD’s) is achieved for the first time. A 2.0 MHz minimum linewidth and a 5 MHz mW minimum linewidth power product are obtained.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.45.+h Stimulated emission

Threshold pump power of a solar‐pumped dye laser

Ja H. Lee, Kyung C. Kim, and Kyong H. Kim

Appl. Phys. Lett. 53, 2021 (1988); http://dx.doi.org/10.1063/1.100308 (2 pages)

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Threshold solar power for dye laser pumping has been determined by measuring the gain of a rhodamine 6G dye laser amplifier at various solar‐simulated irradiances on an amplifier cell. The measured threshold was 20 000 solar constants (2.7 kW/cm2) for the dye volume of 2×5×40 mm3 and the optimum dye concentration of 1×10−3 M. The threshold is about one‐third of that achievable with a high‐intensity solar concentrator.
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42.55.Mv Dye lasers
42.55.-f Lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems

Sound velocity and index of refraction of AlAs measured by picosecond ultrasonics

H. T. Grahn, D. A. Young, H. J. Maris, J. Tauc, J. M. Hong, and T. P. Smith

Appl. Phys. Lett. 53, 2023 (1988); http://dx.doi.org/10.1063/1.100309 (2 pages) | Cited 23 times

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We use picosecond optics techniques to generate and detect acoustic pulses in an epitaxially grown film of AlAs. From the round trip time of the acoustic pulse we find a sound velocity in the [100] direction of 6.4×105 cm s−1. We also show how measurements of this type can be used to determine the refractive index.
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68.60.Bs Mechanical and acoustical properties
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.47.-p Spectroscopy of solid state dynamics
43.35.Ns Acoustical properties of thin films

Dense plasma production for high rate sputtering by means of an electric mirror

Morito Matsuoka and Ken’ichi Ono

Appl. Phys. Lett. 53, 2025 (1988); http://dx.doi.org/10.1063/1.100310 (3 pages) | Cited 2 times

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The production of a new dense plasma for high rate sputtering with an electric mirror has been achieved. The plasma, with a density over 1012 cm−3 , is generated by an oscillating electron beam between two targets. Microwave excitation is detected from the dense plasma. Nonlinear interaction between the electron beam and the plasma plays an important role in increasing plasma density. The high film deposition rates over 3000 Å/min for Al have been realized.
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52.50.Dg Plasma sources
52.40.Mj Particle beam interactions in plasmas
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
81.15.Rs Spray coating techniques

Multiple pulse laser excitation of capillary discharge

R. W. Lee and A. Zigler

Appl. Phys. Lett. 53, 2028 (1988); http://dx.doi.org/10.1063/1.100311 (2 pages) | Cited 7 times

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The results of a proof of principle experiment is presented to illustrate the utility of the capillary discharge as a medium for the efficient production of soft x‐ray lasing. The duration of the capillary discharge plasma, 8 μs, is long enough to allow multiple pulses from a Q‐switched mode‐locked Nd glass laser to be used as a heating source to create a hot, relatively dense plasma several times per discharge.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.55.-f Lasers
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Low‐energy ion‐enhanced deposition of SiO2 in rf magnetron plasmas

Lin I and L. W. Ting

Appl. Phys. Lett. 53, 2030 (1988); http://dx.doi.org/10.1063/1.100493 (3 pages) | Cited 7 times

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A novel low‐temperature (<50 °C) deposition process of a thin SiO2 film in a low‐energy ‘‘rf hollow oval magnetron’’ system was studied. O2 is directly mixed with SiH4 and Ar for deposition under the low pressure (≲10 mTorr). The high electron density (1011 cm−3 ) and the high flux low energy (30 eV) ion bombardment greatly enhance the gas phase and surface processes. Uniform and dense thin films with smooth surface and good adhesion have been obtained. The film stoichiometry (from Si to SiO2), the index of refraction, and the film growth rate (from 1 to 35 Å/s) can be controlled by adjusting the SiH4 /O2 flow rates and their ratio.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.60.Bs Mechanical and acoustical properties
68.55.Nq Composition and phase identification
78.66.Jg Amorphous semiconductors; glasses

Simultaneous planar growth of amorphous and crystalline Ni silicides

E. Ma, W. J. Meng, W. L. Johnson, M‐A. Nicolet, and M. Nathan

Appl. Phys. Lett. 53, 2033 (1988); http://dx.doi.org/10.1063/1.100494 (3 pages) | Cited 21 times

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We report a solid‐state interdiffusion reaction induced by rapid thermal annealing and vacuum furnace annealing in evaporated Ni/Si bilayers. Upon heat treatment of a Ni film overlaid on a film of amorphous Si evaporated from a graphite crucible, amorphous and crystalline silicide layers grow uniformly side by side as revealed by cross‐sectional transmission electron microscopy and backscattering spectrometry. This phenomenon contrasts with the silicide formation behavior previously observed in the Ni‐Si system, and constitutes an interesting counterpart of the solid‐state interdiffusion‐induced amorphization in Ni/Zr thin‐film diffusion couples. Carbon impurity contained in the amorphous Si film stabilizes the amorphous phase. Kinetic and thermodynamic factors that account for the experimental findings are discussed.
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66.30.Ny Chemical interdiffusion; diffusion barriers
68.35.Fx Diffusion; interface formation
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology

Hydrogen concentration profiles in as‐deposited and annealed phosphorus‐doped silicon dioxide films

Joseph Z. Xie, Shyam P. Murarka, Xin S. Guo, and William A. Lanford

Appl. Phys. Lett. 53, 2036 (1988); http://dx.doi.org/10.1063/1.100495 (3 pages) | Cited 4 times

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Hydrogen concentration depth profiles in as‐deposited and annealed phosphorus‐doped silicon dioxide films were measured using the nuclear reaction profiling technique with 6.4 MeV 15N ion beam. The H2/Ar annealing of 450 °C for 60 min in furnace and the rapid thermal annealing at 1000 °C for 60 s in O2 or H2/Ar were carried out. It is found that hydrogen concentration is in the range of 1021–1022 per cm3 in as‐deposited films. Annealing at high temperatures, even in a hydrogen containing medium, lowers the hydrogen concentration in all films. The hydrogen concentration gradually increased with time when the films were left in the room environment. The electrical properties of the oxide are found to be related to the presence of hydrogen. The observed correlation between the flatband voltage and the hydrogen concentration is presented and discussed.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
77.55.-g Dielectric thin films
73.61.Ng Insulators
68.55.Nq Composition and phase identification

Scanning tunneling microscopy of an ion‐bombarded PbS(001) surface

I. H. Wilson, N. J. Zheng, U. Knipping, and I. S. T. Tsong

Appl. Phys. Lett. 53, 2039 (1988); http://dx.doi.org/10.1063/1.100312 (3 pages) | Cited 33 times

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Freshly cleaved (001) surfaces of single crystalline PbS were bombarded by 8 keV Kr+ ions at a dose of 3×1012 cm−2. Atomically resolved scanning tunneling microscopy (STM) images were taken showing damaged areas due to individual ion impacts. Analysis of a STM image shows a shallow impact crater, a stacking fault, displacement of Pb2+ and S2− ions from their regular surface sites, and migration of interstitials to the surface.
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61.80.Jh Ion radiation effects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Dv Composition, segregation; defects and impurities

Measurement of the miscut angle of crystal surfaces vicinal to major crystal planes by x‐ray diffractometry at glancing incidence

S. E. G. Slusky and A. T. Macrander

Appl. Phys. Lett. 53, 2042 (1988); http://dx.doi.org/10.1063/1.100313 (2 pages) | Cited 3 times

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The width of an x‐ray diffraction peak is a sensitive function of the angle of incidence when the angle of incidence is less than 1°. Measurements of x‐ray diffraction peak widths taken at a glancing angle of incidence can be interpreted to yield information on miscut angles of crystal surfaces relative to major crystal planes. Miscut angles of a few arcminutes can be measured. A high‐resolution multiple crystal x‐ray diffractometer is necessary to achieve the accuracy of peak width measurement required. The technique is applicable to any crystal. As an example, we discuss the case of a (100) InP surface measured using the highly asymmetric (311) diffraction.
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61.05.C- X-ray diffraction and scattering
61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.05.cp X-ray diffraction

New model for the Staebler–Wronski effect in an amorphous silicon hydrogen alloy

Wen‐Jer Tzeng and Si‐Chen Lee

Appl. Phys. Lett. 53, 2044 (1988); http://dx.doi.org/10.1063/1.100314 (3 pages) | Cited 3 times

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The photoconductivity decay of an undoped amorphous silicon hydrogen alloy at different substrate temperatures is investigated. A model that attributes defect generation to recombinations through defects is used to describe the degradation kinetics. The typically observed 1/n power law decay with n close to integer can be easily explained using this model. The saturation behavior of photoconductivity suggests that the light‐induced annealing process indeed exists near room temperature.
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72.40.+w Photoconduction and photovoltaic effects
72.80.Ng Disordered solids
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.72.Bb Theories and models of crystal defects

Semiconductor superlattice electron wave interference filters

T. K. Gaylord and K. F. Brennan

Appl. Phys. Lett. 53, 2047 (1988); http://dx.doi.org/10.1063/1.100315 (3 pages) | Cited 17 times

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The quantitative analogies that have been established between electron wave propagation in semiconductors and optical wave propagation in dielectrics are used to demonstrate that high‐resolution energy filters in semiconductors are possible. An example filter consisting of electron quarter‐wavelength layers of GaAs and Ga0.55Al0.45As and a half‐wavelength layer of GaAs is presented and theoretically analyzed. The pass electron energy is 0.139 eV and the passband is only 0.003 eV (2.2% of pass energy). Such a filter could be incorporated into semiconductor devices (e.g., as a hot‐electron emitter in a ballistic transistor) or used to control free‐space electron beams (e.g., in electron beam lithography).
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85.30.De Semiconductor-device characterization, design, and modeling
41.75.Fr Electron and positron beams
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Electrical and optical properties of GaAs/AlGaAs multiple quantum wells grown on Si substrates

Y. J. Mii, R. P. G. Karunasiri, and K. L. Wang

Appl. Phys. Lett. 53, 2050 (1988); http://dx.doi.org/10.1063/1.100316 (3 pages)

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Intersubband infrared absorption and sequential resonant tunneling in GaAs/AlGaAs multiple quantum wells grown on Si substrates are reported for the first time. The observed electrical and optical properties of the multiple quantum wells on Si are comparable to similar structures grown directly on GaAs substrates. This suggests the potential application of integrating the GaAs/AlGaAs multiple quantum well devices with Si very large scale integrated circuits for long‐wavelength (near 10 μm) infrared detection.
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73.61.Ey III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.40.Gk Tunneling
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Influence of growth temperature on crystalline structure in Ga0.5In0.5P grown by organometallic vapor phase epitaxy

Masahiko Kondow, Hiroshi Kakibayashi, Shigekazu Minagawa, Youji Inoue, Taneo Nishino, and Yoshihiro Hamakawa

Appl. Phys. Lett. 53, 2053 (1988); http://dx.doi.org/10.1063/1.100317 (3 pages) | Cited 73 times

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The relation between growth temperature and ordered structures in Ga0.5In0.5P grown using organometallic vapor phase expitaxy is investigated using transmission electron diffraction, electroreflectance, and Raman scattering measurements. It is found that generation of the ordered structure is not related to the immiscibility of this alloy and that the ordered structures do not simply represent ‘‘sublattice ordering.’’ The anomalous band gap may be a consequence of the variation in the atomic arrangement of neighboring atoms, but not of the long‐range ordered structure itself.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.55.-a Thin film structure and morphology

Contact resistivity of some magnesium/silicon and magnesium silicide/silicon structures

P. L. Janega, J. McCaffrey, D. Landheer, M. Buchanan, M. Denhoff, and D. Mitchel

Appl. Phys. Lett. 53, 2056 (1988); http://dx.doi.org/10.1063/1.100496 (3 pages) | Cited 11 times

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Transmission line model and end resistance measurements were made to determine the contact resistivity of Mg and Mg2Si contacts to Si doped n‐type in the range 1018–1020 cm−3. The data are consistent with a barrier height of 0.4 eV for Mg and 0.52 eV for Mg2Si. The morphology, structure, and composition were studied using transmission electron microscopy.
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73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
68.55.-a Thin film structure and morphology

New doping method for subhalf micron trench sidewalls by using an electron cyclotron resonance plasma

B. Mizuno, I. Nakayama, N. Aoi, M. Kubota, and T. Komeda

Appl. Phys. Lett. 53, 2059 (1988); http://dx.doi.org/10.1063/1.100318 (3 pages) | Cited 48 times

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A new doping method for the vertical sidewall of a trench by electron cyclotron resonance plasma is described. The plasma was produced under a pressure of 5×10−4 Torr. A doped layer was formed uniformly along the sidewall of a trench with subhalf micron width and an aspect ratio of 6.2. By using a de‐ionized water cooling system, the wafer temperature was maintained below 120 °C and the boron dopant was introduced without damage to the photoresist.
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61.72.uf Ge and Si
85.40.Hp Lithography, masks and pattern transfer

Cathodoluminescence of oval defects in GaAs/AlxGa1−xAs epilayers using an optical fiber light collection system

Michael E. Hoenk and Kerry J. Vahala

Appl. Phys. Lett. 53, 2062 (1988); http://dx.doi.org/10.1063/1.100319 (3 pages) | Cited 4 times

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A cathodoluminescence system using a novel optical fiber light collection system is employed to study oval defects in GaAs/Alx Ga1−x As epilayers grown by molecular beam epitaxy. Spatially and spectrally resolved data on the luminescence of oval defects are presented. Oval defects are found to contain an enhanced concentration of gallium, which is consistent with current theories regarding the origin of these defects.
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68.35.Dv Composition, segregation; defects and impurities
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.60.Hk Cathodoluminescence, ionoluminescence

Planar doping with gallium of molecular beam epitaxial ZnSe

J. L. de Miguel, S. M. Shibli, M. C. Tamargo, and B. J. Skromme

Appl. Phys. Lett. 53, 2065 (1988); http://dx.doi.org/10.1063/1.100320 (3 pages) | Cited 21 times

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A new approach to doping in ZnSe, which involves Ga deposition in spatially separated atomic planes (planar doping), is reported. The dependence of doping efficiency on the particular surface termination (Zn or Se stabilized) maintained during the deposition of the Ga dopant is investigated by Hall measurements and low‐temperature photoluminescence spectroscopy, and the results are compared to those obtained for uniform doping. Under our growth conditions and for the same average amount of Ga atoms arriving at the ZnSe surface, the doping efficiency is dramatically enhanced in the case of Ga planar doping on Zn terminated surfaces. This enhancement correlates with the reduction of the broad deep luminescence bands that dominate under the other doping conditions, indicating an effective reduction of the self‐compensating mechanisms. Under optimized conditions, n‐type ZnSe with carrier concentration in the 1018 cm−3 range is achieved.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Ga II-VI semiconductors
78.55.Et II-VI semiconductors
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