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5 Dec 1988

Volume 53, Issue 23, pp. 2251-2347

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Highly efficient second‐harmonic generation of picosecond pulses at 1.32 μm in 3‐methyl‐4‐nitropyridine‐1‐oxide

D. Josse, R. Hierle, I. Ledoux, and J. Zyss

Appl. Phys. Lett. 53, 2251 (1988); http://dx.doi.org/10.1063/1.100413 (3 pages) | Cited 13 times

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Second‐harmonic generation was observed in a 7‐mm‐thick 3‐methyl‐4‐nitropyridine‐1‐oxide crystal at the 1.32 and 1.34 μm emission lines of a Q‐switched, mode‐locked Nd3+:YAG laser, emitting short pulses of duration of 160 ps. A remarkably high effective conversion rate of 50% was measured by pump depletion in a type‐I phase‐matched configuration.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.-e Optical properties of bulk materials and thin films
42.70.-a Optical materials
42.72.-g Optical sources and standards

Subpicosecond photoconductivity overshoot in gallium arsenide observed by electro‐optic sampling

Kevin Meyer, Maurice Pessot, Gerard Mourou, Robert Grondin, and Sleiman Chamoun

Appl. Phys. Lett. 53, 2254 (1988); http://dx.doi.org/10.1063/1.100270 (3 pages) | Cited 36 times

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Electro‐optic sampling of photoconductive transients on a subpicosecond time scale is used to study hot‐carrier transport in GaAs. The results reported here are interpreted as direct time‐domain observations of nonequilibrium transport on a subpicosecond time scale and they clearly show both an overshoot and bias‐dependent delay at high excitation energy which are consistent with published Monte Carlo predictions.
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72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.20.Jq Electro-optical effects
78.47.-p Spectroscopy of solid state dynamics

Power spectrum of frequency noise of semiconductor lasers with optical feedback from a high‐finesse resonator

H. Li and N. B. Abraham

Appl. Phys. Lett. 53, 2257 (1988); http://dx.doi.org/10.1063/1.100271 (3 pages) | Cited 4 times

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The power spectrum of frequency noise of a semiconductor laser with optical feedback from a high‐finesse resonator is calculated using a differential‐difference equation. The results are compared with measurements. The feedback reduces the frequency noise at low Fourier frequencies, while enhancing the oscillations near the relaxation oscillation frequency, eventually driving the system unstable. The results show a simple way to choose the parameters of the high‐finesse cavity to minimize the frequency noise without causing instabilities.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Infrared double‐heterostructure diode lasers made by molecular beam epitaxy of Pb1−xEuxSe

M. Tacke, Beate Spanger, A. Lambrecht, P. R. Norton, and H. Böttner

Appl. Phys. Lett. 53, 2260 (1988); http://dx.doi.org/10.1063/1.100247 (3 pages) | Cited 38 times

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Infrared (IR) diode lasers have been made by growing heterostructures or graded structures of Pb1−xEuxSe. This IV‐VI ternary has a small lattice variation within the IR band‐gap range. Double‐heterostructure lasers with PbSe active layers were operated up to T=174 K cw and 220 K pulsed mode; they reached the highest cw operation temperature reported for this type of laser in the mid IR. Their tuning range was 7.8–5.7 μm cw. Lasers with the ternary as the active layer were operated up to the shortest wavelength of 2.88 μm at 100 K cw. At present lasers made by molecular beam epitaxy of this material cover the widest wavelength region at T>77 K around 5 μm in cw operation.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Fc Modulation, tuning, and mode locking

Picosecond spectra of gain‐switched AlGaAs/GaAs multiple quantum well lasers

K. Ketterer, E. H. Böttcher, and D. Bimberg

Appl. Phys. Lett. 53, 2263 (1988); http://dx.doi.org/10.1063/1.100248 (3 pages) | Cited 9 times

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The temporal waveform of the single longitudinal modes emitted by gain‐switched AlGaAs/GaAs multiple quantum well lasers is analyzed by means of a synchroscan streak camera system coupled to a spectrograph. It is found that only 50% of the number of the longitudinal modes contributing to the time‐averaged spectrum are present during the first relaxation oscillation. The time‐dependent shift of the envelope of the mode spectrum is quantitatively explained by a spectral shift of the gain maximum as a function of the time‐varying charge carrier density. The results demonstrate that, for the analysis of transient multimode spectra of gain‐switched injection lasers, inclusion of the energy dependence of the gain and gain compression is mandatory.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Phonon‐assisted stimulated emission in thin (<55 Å) AlGaAs‐GaAs‐AlGaAs single quantum wells

Y. C. Lo and R. M. Kolbas

Appl. Phys. Lett. 53, 2266 (1988); http://dx.doi.org/10.1063/1.100249 (3 pages) | Cited 8 times

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Since the initial report of phonon‐assisted stimulated emission in AlGaAs‐GaAs quantum wells, several laboratories have performed similar experiments which have produced a wide range of experimental data and interpretations. We present photopumped laser data (77 K) from three different AlGaAs‐GaAs‐AlGaAs single quantum well heterostructures grown by molecular beam epitaxy. Closely spaced end‐to‐end laser modes are observed one phonon energy (≊36 meV) below the n=1′ electron to light hole confined‐particle state which we attribute to phonon‐assisted stimulated emission. Also, the data are inconsistent with impurity related luminescence or optical absorption losses which have been suggested as alternative explanations. These results are important because these are the thinnest quantum wells to exhibit phonon‐assisted stimulated emission and the first independent observation and confirmation of this important phenomenon.
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42.55.Px Semiconductor lasers; laser diodes
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors
78.45.+h Stimulated emission

Plasma focus wiggler for free‐electron laser applications

F. Venneri, H. Kislev, and G. H. Miley

Appl. Phys. Lett. 53, 2269 (1988); http://dx.doi.org/10.1063/1.100250 (3 pages) | Cited 1 time

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A magnetically stabilized plasma focus with controlled modulations has been demonstrated for the first time. A 3‐mm‐diam plasma focus with two wiggler periods of 1 cm each was kept stable for about 30 ns. Similar configurations with shorter periods could be used as intense wigglers for short‐wavelength free‐electron lasers.
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41.60.Cr Free-electron lasers
41.60.-m Radiation by moving charges
52.55.Ez Theta pinch

Gain dependence of the threshold characteristic temperature in multiple quantum well lasers

J. Z. Wilcox, G. L. Peterson, S. S. Ou, J. J. Yang, M. Jansen, and D. Schechter

Appl. Phys. Lett. 53, 2272 (1988); http://dx.doi.org/10.1063/1.100251 (3 pages) | Cited 2 times

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An analytical formula that determines dependence of the threshold characteristic temperature T0 on gain in multiple quantum well lasers is derived by approximately evaluating the gain integrals. Because the threshold gain depends on lasing cavity and quantum well structures, the formula determines dependence of T0 on laser length, reflectivities, optical loss, and number of quantum wells. A very good agreement is obtained between theory and experiment.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Electronic beam steering in monolithic grating‐surface‐emitting diode laser arrays

N. W. Carlson, G. A. Evans, R. Amantea, S. L. Palfrey, J. M. Hammer, M. Lurie, L. A. Carr, F. Z. Hawrylo, E. A. James, C. J. Kaiser, J. B. Kirk, and W. F. Reichert

Appl. Phys. Lett. 53, 2275 (1988); http://dx.doi.org/10.1063/1.100252 (3 pages) | Cited 17 times

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Electronic beam steering has been demonstrated in both one‐ and two‐dimensional injection‐coupled grating‐surface‐emitting diode laser arrays. By appropriately varying the drive current to the electrically independent gain sections of an injection‐coupled grating‐surface‐emitting laser array, the angular position of the far‐field output can be steered. Experimental results for two‐dimensional surface‐emitting arrays are presented, as well as a theoretical model which shows that beam steering is a general property of injection‐coupled surface‐emitting arrays.
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42.55.Mv Dye lasers
42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics

High‐frequency resonance in acoustic superlattice of LiNbO3 crystals

Yong‐yuan Zhu, Nai‐ben Ming, Wen‐hua Jiang, and Yong‐an Shui

Appl. Phys. Lett. 53, 2278 (1988); http://dx.doi.org/10.1063/1.100514 (3 pages) | Cited 28 times

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The relationship between the resonance frequency and the periodicity of the acoustic superlattice of LiNbO3 crystals has been obtained by analysis of the excitation and propagation of elastic waves in this kind of material with which high‐frequency resonance in the range of 500–800 MHz has been realized experimentally. The experimental results are in good agreement with the theoretical ones. The applications of acoustic devices operating at frequencies high above 500 MHz are to be expected.
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62.30.+d Mechanical and elastic waves; vibrations
62.65.+k Acoustical properties of solids
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
72.50.+b Acoustoelectric effects
73.50.Rb Acoustoelectric and magnetoacoustic effects
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics

Elastic properties of silicon oxynitride films determined by picosecond acoustics

H. T. Grahn, H. J. Maris, J. Tauc, and K. S. Hatton

Appl. Phys. Lett. 53, 2281 (1988); http://dx.doi.org/10.1063/1.100253 (3 pages) | Cited 28 times

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The sound velocity and elastic modulus of a series of amorphous silicon oxynitride films produced by reactive sputtering have been measured as a function of nitrogen content. The acoustic pulses were generated and detected with ultrashort light pulses. The sound velocity was found to depend linearly on the nitrogen content.
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68.60.Bs Mechanical and acoustical properties
68.55.Nq Composition and phase identification
78.47.-p Spectroscopy of solid state dynamics
43.35.Ns Acoustical properties of thin films

Electron energy‐loss study of bonding in amorphous silicon‐carbon alloy films prepared with hydrogen dilution

D. R. McKenzie, J. Bruley, and G. B. Smith

Appl. Phys. Lett. 53, 2284 (1988); http://dx.doi.org/10.1063/1.100254 (3 pages) | Cited 3 times

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Electron energy‐loss spectroscopy was used to study the nature of chemical bonding in a‐Si1−xCx:H films produced by rf glow discharge decomposition of SiH4/CH4 mixtures with hydrogen dilution. The low‐loss region, the Si L edge, and the C K edge were studied. It was found that near stoichiometric films have a high degree of Si to C bonding and that substoichiometric films show some C to C sp2 bonding. A free‐electron model was used to interpret the variation of plasmon energy of these films with composition.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
61.43.Fs Glasses
61.43.-j Disordered solids

Direct writing of 10 nm features with the scanning tunneling microscope

E. E. Ehrichs, S. Yoon, and A. L. de Lozanne

Appl. Phys. Lett. 53, 2287 (1988); http://dx.doi.org/10.1063/1.100255 (3 pages) | Cited 49 times

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A scanning tunneling microscope (STM) has been used to write metallic lines and carbon lines with linewidths as small as 10 nm. Organometallic gases or surface organic contamination can be decomposed to deposit these lines in a single step. Computer control of the STM allows precise patterning of these lines on a silicon substrate.
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85.40.Hp Lithography, masks and pattern transfer
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
81.65.-b Surface treatments
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Evaluation of exciton absorption peak broadening factors in InGaAsP/InP multiple quantum wells

M. Sugawara, T. Fujii, M. Kondo, K. Kato, K. Domen, S. Yamazaki, and K. Nakajima

Appl. Phys. Lett. 53, 2290 (1988); http://dx.doi.org/10.1063/1.100256 (3 pages) | Cited 8 times

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We evaluated the magnitude of broadening factors of ground‐state exciton absorption peaks in In1−xGaxAsyP1−y/InP (x=0.47y) multiple quantum wells (MQW’s) with about 10 nm wells. The absorption peaks broadened with a decrease of y. Analyzing the absorption peak broadening with increasing temperature, the thermal broadening factor at 300 K was found to be about 9 meV and composition independent. Analyzing the photoluminescence linewidth at 4.2 K, it was found that composition fluctuations in the well caused an inhomogeneity of the exciton energy level of 4.4 meV for the y=1.0 MQW and 7.5 meV for the y=0.6 MQW, being the greatest contributors to inhomogeneous broadening. We conclude that the exciton absorption peak broadening with a decrease of y is primarily due to the increase of composition fluctuations.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors
71.35.-y Excitons and related phenomena
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Defect reduction effects in GaAs on Si substrates by thermal annealing

Masafumi Yamaguchi, Akio Yamamoto, Masami Tachikawa, Yoshio Itoh, and Mitsuru Sugo

Appl. Phys. Lett. 53, 2293 (1988); http://dx.doi.org/10.1063/1.100257 (3 pages) | Cited 66 times

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High quality GaAs films with dislocation densities of 2–3×106 cm−2 on (100) Si substrates have been obtained by thermal cycle growth using the metalorganic chemical vapor deposition method. Significant reduction effects of dislocation density in the GaAs layers on Si have been analyzed by a simple model, in which annihilation and coalescence of dislocations are assumed to be caused by dislocation movement under thermal stress. Relaxation of thermal stress in the GaAs films on Si during thermal annealing has also been observed.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.60.Bs Mechanical and acoustical properties

Strain dependence of p‐i‐n hydrogenated amorphous silicon junctions

Michito Utsunomiya and Akira Yoshida

Appl. Phys. Lett. 53, 2296 (1988); http://dx.doi.org/10.1063/1.100258 (3 pages) | Cited 2 times

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The effects of mechanical strain on the electrical properties of p‐i‐n hydrogenated amorphous silicon junction devices were investigated. When strain was applied parallel to the junction plane, both the forward and reverse currents increased with increasing compressive strain and decreased with increasing tensile strain. The ratio for change in current was 8% under the strain of 7.5×10−4, and the strain sensitivity was as large as that in the piezoresistance effect of crystalline silicon. The strain dependence is due to a change in carrier concentration induced by a displacement of energy band and a change in carrier lifetime.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.40.Rs Electrical and magnetic properties related to treatment conditions

Zn diffusion enhancement of interdiffusion in a GaAs‐InGaPAs heterostructure

H.‐H. Park, K. H. Lee, and D. A. Stevenson

Appl. Phys. Lett. 53, 2299 (1988); http://dx.doi.org/10.1063/1.100259 (3 pages) | Cited 9 times

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The influence of concurrent Zn diffusion on the interdiffusion in an In0.06Ga0.94P0.05As0.95‐GaAs heterostructure grown by liquid phase epitaxy was investigated. A 25 h, 700 °C diffusion anneal was performed using an equilibrium ternary diffusion source and profiles of In and P were measured with secondary‐ion mass spectrometry. The Zn diffusion selectively enhances the cation (In‐Ga) interdiffusion; with concurrent Zn diffusion, the interdiffusion coefficient for the In‐Ga components is ≊5×10−14 cm2/s, as compared to ≊6×10−16 cm2/s for anions (As‐P). A kick‐out mechanism is proposed to explain the results.
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68.35.Fx Diffusion; interface formation
66.30.J- Diffusion of impurities
66.30.Lw Diffusion of other defects
66.30.Ny Chemical interdiffusion; diffusion barriers

Impurity‐induced layer disordering of In0.53Ga0.47As/In0.52Al0.48As heterostructures

R. J. Baird, T. J. Potter, R. Lai, G. P. Kothiyal, and P. K. Bhattacharya

Appl. Phys. Lett. 53, 2302 (1988); http://dx.doi.org/10.1063/1.100260 (3 pages) | Cited 13 times

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Impurity‐induced layer disordering of In0.53 Ga0.47 As/In0.52 Al0.48 As heterostructures grown by molecular beam epitaxy has been observed by Auger electron spectroscopy depth profiling. We find that Si+ ion implantation to concentrations greater than 2×1019 atoms cm−3 enhances the intermixing of Ga and Al in these heterostructures at an annealing temperature of 1075 K. However, the relatively high temperature which is required to activate the interdiffusion of Ga and Al in the region of high Si concentration is sufficient to induce In diffusion in regions of lower Si concentration. Zinc diffusion is found to completely intermix the Ga and Al in the heterolayers at temperatures as low as 825 K, which is below the temperature at which significant In diffusion occurs in undoped regions.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Analysis of the quantum‐confined Stark effect in GaSb/AlGaSb multiple quantum wells

Elizabeth C. Carr, Thomas H. Wood, Charles A. Burrus, and T. H. Chiu

Appl. Phys. Lett. 53, 2305 (1988); http://dx.doi.org/10.1063/1.100261 (3 pages) | Cited 7 times

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We have measured the quantum‐confined Stark effect in GaSb/AlGaSb multiple quantum wells. Our data are in good agreement with theory for electric fields from 2×104 to 13×104 V/cm. We found the effects of strain to be important in matching the theory to the low‐field spectra.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.20.Jq Electro-optical effects

Use of independently controlled Cl radical and Ar ion beams for anisotropic chemically enhanced etching of GaAs

J. A. Skidmore, L. A. Coldren, E. L. Hu, J. L. Merz, and K. Asakawa

Appl. Phys. Lett. 53, 2308 (1988); http://dx.doi.org/10.1063/1.100262 (3 pages) | Cited 5 times

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We have implemented a novel dry etching technique that combines chlorine radicals generated in a microwave plasma with an argon ion beam. This uniquely provides separate control of the radical flux and ion flux so that the degree of anisotropy and chemical enhancement can be arbitrarily varied. We demonstrate that this etching technique should be capable of producing smooth structures with low damage for applications in optoelectronics.
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81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
85.40.Hp Lithography, masks and pattern transfer

In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistor on GaAs by molecular beam epitaxy

T. Won, S. Agarwala, and H. Morkoç

Appl. Phys. Lett. 53, 2311 (1988); http://dx.doi.org/10.1063/1.100263 (3 pages) | Cited 6 times

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We report on the first In0.52Al0.48As/In0.53Ga0.47As heterojunction bipolar transistors grown on a GaAs substrate. In order to suppress the propagation of threading dislocations to the surface, a ten‐period AlAs/In0.52Al0.48As (20 Å/20 Å) strained‐layer superlattice was repeated twice with intervening undoped In0.52Al0.48As layers. The typical common emitter current gain in 50×50 μm2 emitter area devices was 50, with a maximum of 63, at a collector current density of 2×103 A/cm2.
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85.30.Pq Bipolar transistors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Sidewall growth by atomic layer epitaxy

Y. Ide, B. T. McDermott, M. Hashemi, S. M. Bedair, and W. D. Goodhue

Appl. Phys. Lett. 53, 2314 (1988); http://dx.doi.org/10.1063/1.100264 (3 pages) | Cited 12 times

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Atomic layer epitaxy (ALE) has successfully been used to grow epitaxial layers over chemically etched grooves and dry etched sidewalls formed on GaAs(100) substrates. GaAs/InGaAs multilayers were deposited on V‐shaped and inverted trapezoid‐shaped grooves that were 4–5 μm deep and 8–20 μm wide. Growth conforming to the original sidewall surfaces was accomplished both on the chemically etched and on ion beam assisted etched surfaces. These features show distinct improvement over similar attempts by metalorganic chemical vapor deposition or molecular beam epitaxy. The ability of ALE to proceed in a self‐limiting fashion on such structures is expected to lead to the realization of novel device concepts.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.65.-b Surface treatments
68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Medium energy ion scattering analysis of reactive ion etched Si(001) surfaces

M. Copel, R. M. Tromp, S. W. Robey, and G. S. Oehrlein

Appl. Phys. Lett. 53, 2317 (1988); http://dx.doi.org/10.1063/1.100265 (3 pages)

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Silicon surfaces reactive ion etched in CF4/H2 plasmas have been examined using medium energy ion scattering and core level photoemission. Surfaces analyzed in ultrahigh vacuum have a significantly higher fluorine content than surfaces that have been exposed to air prior to analysis. In addition, an unusually large cross section exists for ion beam desorption of some, but not all, of the fluorine. Based on core level shifts, we demonstrate that fluorine desorption arises from both the fluorocarbon film and the underlying fluorosilyl layer.
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81.65.-b Surface treatments
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.35.Dv Composition, segregation; defects and impurities
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics

Resonant tunneling in AlSb/InAs/AlSb double‐barrier heterostructures

L. F. Luo, R. Beresford, and W. I. Wang

Appl. Phys. Lett. 53, 2320 (1988); http://dx.doi.org/10.1063/1.100266 (3 pages) | Cited 49 times

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We report the first observations of resonant tunneling in the AlSb/InAs material system, with a maximum peak‐to‐valley current ratio of 1.8:1 at room temperature and 9:1 at 77 K. The large AlSb/InAs barrier height of 1.8 eV for electrons and high‐mobility InAs will be advantageous in device applications. In particular, the small electron effective mass in InAs makes it possible to demonstrate quantum effects in a 24 nm well, the longest coherence distance reported for double‐barrier tunneling structures. We estimate that an AlSb/InAs resonant tunneling transistor can significantly outperform similar devices based on AlGaAs/GaAs.
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Performance of electrostatic Aharonov–Bohm interferometers in the diffusive regime

S. Bandyopadhyay and W. Porod

Appl. Phys. Lett. 53, 2323 (1988); http://dx.doi.org/10.1063/1.100267 (3 pages) | Cited 9 times

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In this letter we discuss the performance of semiconductor electrostatic Aharonov–Bohm interferometers that operate in the diffusive regime. We find that the performance is primarily determined by temperature and carrier concentration, and we have identified the conditions for ‘‘fair,’’ ‘‘good,’’ and ‘‘excellent’’ performance. Our analysis shows that two‐dimensional interferometers cannot operate at elevated temperatures but one‐dimensional interferometers, on the other hand, could operate at 77 K if the carrier concentration is sufficiently high and the structure is cleverly designed to minimize end reflections.
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85.30.De Semiconductor-device characterization, design, and modeling
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Ey III-V and II-VI semiconductors
72.20.Fr Low-field transport and mobility; piezoresistance
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