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12 Dec 1988

Volume 53, Issue 24, pp. 2359-2454

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Bistable spatial light modulator using liquid crystal and Bi12SiO20 crystal layers

Kuniharu Takizawa, Masakatsu Okada, Hiroshi Kikuchi, and Tahito Aida

Appl. Phys. Lett. 53, 2359 (1988); http://dx.doi.org/10.1063/1.100522 (3 pages) | Cited 6 times

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A compact spatial light modulator having optical bistability has been constructed with a twisted nematic liquid‐crystal layer, a polarizing film, and a Bi12SiO20 crystal layer. The optical bistability is produced by combining the nonlinear optical transmittance property of the liquid‐crystal electro‐optic light modulator with the photoconductive property of the Bi12SiO20 crystal layer. The device performs optically bistable operations in a controllable manner, and parallel processing of intensity‐level image thresholding is also demonstrated for several threshold levels.
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42.79.Hp Optical processors, correlators, and modulators
42.65.Pc Optical bistability, multistability, and switching, including local field effects
78.20.Jq Electro-optical effects
72.40.+w Photoconduction and photovoltaic effects

Time jitter in multimode Fabry–Perot laser diodes

A. D’Ottavi, A. Mecozzi, P. Spano, and S. Piazzolla

Appl. Phys. Lett. 53, 2362 (1988); http://dx.doi.org/10.1063/1.100230 (3 pages) | Cited 9 times

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Time jitter, which affects the switch‐on instant of pulse modulated semiconductor lasers, has recently been shown to be lower in Fabry–Perot than in distributed feedback lasers. In this letter starting from the rate equations for the field and the number of excited carriers in multimode lasers, and considering the stochastic nature of spontaneous emissions, we are able to find an expression for time jitter which explains the above‐mentioned experimental results.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Fc Modulation, tuning, and mode locking

XeF laser pumped by high‐power sliding discharges

R. W. F. Gross, L. E. Schneider, and S. T. Amimoto

Appl. Phys. Lett. 53, 2365 (1988); http://dx.doi.org/10.1063/1.100231 (3 pages) | Cited 9 times

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We have developed a high‐power XeF laser photolytically pumped by two surface discharges. The discharges slide along 760‐mm‐long by 12‐mm‐wide ferrite rods. They were energized by a single 6 μF capacitor at 50 kV in a fast discharge circuit. Each emitted up to 38 kW nm−1 cm−2 at 140 nm in 3‐μs‐long pulses. This powerful radiation source was used to photolyze mixtures of 450 Torr argon, 50 Torr nitrogen, and up to 12 Torr XeF2 in an active volume of about 1 l. We extracted a maximum specific laser output energy density of 8 J/l at 351 nm from the B–X transition of XeF.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems
52.80.Yr Discharges for spectral sources (including inductively coupled plasma)
42.55.-f Lasers

Sensitive, highly linear lithium niobate interferometers for electromagnetic field sensing

C. H. Bulmer

Appl. Phys. Lett. 53, 2368 (1988); http://dx.doi.org/10.1063/1.100232 (3 pages) | Cited 10 times

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An asymmetric Mach–Zehnder interferometer in Ti:LiNbO3 has been demonstrated to have a 84 dB linear dynamic range and 1.1 μV sensitivity, for a 3 kHz detection bandwidth and a 50 Ω resistance, at the 1.3 μm wavelength. This device is useful for electric and magnetic field sensing. Optimum linearity is achieved with a 90° intrinsic phase bias. The dependence of dynamic range and sensitivity on optical power, phase bias, and modulation voltage is reported. The reasons for, and magnitudes of, deviations from optimum linear behavior are described for many fabricated interferometers.
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07.60.Ly Interferometers
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
42.79.Hp Optical processors, correlators, and modulators
42.82.-m Integrated optics

Continuous, high‐power operation of a strained InGaAs/AlGaAs quantum well laser

D. P. Bour, D. B. Gilbert, L. Elbaum, and M. G. Harvey

Appl. Phys. Lett. 53, 2371 (1988); http://dx.doi.org/10.1063/1.100233 (3 pages) | Cited 20 times

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Continuous wave (cw), high‐power operation of a strained In0.2Ga0.8As/ AlGaAs quantum well laser, grown by atmospheric pressure organometallic vapor phase epitaxy, is reported. The laser active region consists of a single 70 Å In0.2Ga0.8As/Al0.2Ga0.8As quantum well, with optical confinement provided by a graded index separate confinement heterostructure. The threshold current density and differential quantum efficiency of a 90 μm×600 μm stripe with uncoated facets are ∼200 A/cm2 and 46%, respectively. Lasing wavelength is ∼930 nm, and the cw single ended power versus current characteristic is linear up to 250 mW (1 A current). In the short‐cavity (<300 μm) regime, these devices have high thresholds and have been observed to lase at shorter wavelength, presumably due to a saturation of gain at the lowest energy transition. The characteristic temperature is 150 K and decreases somewhat with cavity length. This suggests that some nonradiative process, most likely Auger recombination, contributes significantly to quantum well gain saturation.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Time‐resolved waveguide modulation of a conjugated polymer

M. Sinclair, D. McBranch, D. Moses, and A. J. Heeger

Appl. Phys. Lett. 53, 2374 (1988); http://dx.doi.org/10.1063/1.100234 (3 pages) | Cited 21 times

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We present a new pump and probe technique for measuring intensity‐dependent refractive indices (n2) of waveguide quality thin films, and we apply it to films of polydiacetylene‐(CH2)4OCONHOCOC4H9 (PDA‐4BCMU). Just below the exciton absorption band, the real part of n2 is negative with magnitude ≊10−7(MW/cm2)−1. The initial fast response of n2 is followed by a slower (∼2.5 ps) decay, in close agreement with the decay of the bleaching of the exciton absorption following resonant excitation. These results are consistent with phase space filling by excitons as the mechanism for the nonlinear index.
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78.66.Qn Polymers; organic compounds
42.79.Gn Optical waveguides and couplers
78.47.-p Spectroscopy of solid state dynamics
81.40.Tv Optical and dielectric properties related to treatment conditions

Theory of polymer ablation

G. D. Mahan, H. S. Cole, Y. S. Liu, and H. R. Philipp

Appl. Phys. Lett. 53, 2377 (1988); http://dx.doi.org/10.1063/1.100235 (3 pages) | Cited 36 times

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A new formula is presented for the etch depth l per pulse of an excimer laser of fluence F. Incremental ablation is defined as the etch depth per pulse after many pulses. We show that l is proportional to F, rather than ln(F).
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79.20.Ds Laser-beam impact phenomena
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments

Spectral and picosecond temporal properties of flared guide Y‐coupled phase‐locked laser arrays

R. K. DeFreez, D. J. Bossert, N. Yu, K. Hartnett, R. A. Elliott, and H. G. Winful

Appl. Phys. Lett. 53, 2380 (1988); http://dx.doi.org/10.1063/1.100236 (3 pages) | Cited 6 times

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Spatio‐spectral and spatio‐temporal properties of flared waveguide ‘‘Y’’‐coupled laser arrays are investigated in both cw and pulsed operation. In each case, regular sustained self‐pulsations are exhibited. Destabilization of phase locking, caused by amplitude phase coupling, is thought to be the origin of the pulsations.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking

Study of shock coalescence in laser‐irradiated targets

S. E. Coe, O. Willi, T. Afshar‐Rad, and S. J. Rose

Appl. Phys. Lett. 53, 2383 (1988); http://dx.doi.org/10.1063/1.100237 (3 pages) | Cited 3 times

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We report on the first direct experimental observation of the coalescence of two shocks induced by a shaped laser pulse. Optical streak photography of the rear surface of aluminum multiple step targets was used to study the breakout of these shocks and observe their behavior. The experimental results are compared with simulations by a one‐dimensional Lagrangian hydrodynamic code.
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52.35.Tc Shock waves and discontinuities
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.38.-r Laser-plasma interactions

Soft‐magnetic properties and structure of Fe/CoNbZr multilayers

F. W. A. Dirne, F. J. A. den Broeder, J. A. M. Tolboom, H. J. de Wit, and C. H. M. Witmer

Appl. Phys. Lett. 53, 2386 (1988); http://dx.doi.org/10.1063/1.100238 (3 pages) | Cited 20 times

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The magnetic and structural properties of ion beam sputtered Fe/CoNbZr multilayers were studied as a function of the CoNbZr and Fe layer thickness. Good soft‐magnetic properties (coercivity <40 A/m and permeability >1000) are obtained only when the Fe grains are small, which is the case for multilayers with Fe layer thicknesses below 10 nm and CoNbZr layer thicknesses above 4 nm. Thick CoNbZr layers (>4 nm) are amorphous and repeated nucleation of Fe grains is observed. When the CoNbZr layers are too thin (<3 nm) they are crystalline and do not interrupt the Fe grain growth. The resulting columnar growth of Fe throughout the total film thickness leads then to a drastic decrease of permeability and increase of coercivity.
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75.70.Ak Magnetic properties of monolayers and thin films
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.50.-y Studies of specific magnetic materials

First cw operation of a Ga0.25In0.75As0.5P0.5‐InP laser on a silicon substrate

M. Razeghi, M. Defour, R. Blondeau, F. Omnes, P. Maurel, O. Acher, F. Brillouet, J. C. C‐Fan, and J. Salerno

Appl. Phys. Lett. 53, 2389 (1988); http://dx.doi.org/10.1063/1.100239 (2 pages) | Cited 43 times

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We report the first successful room‐temperature cw operations of a Ga0.25 In0.75 As0.5 P0.5 ‐InP buried ridge structure laser emitting at 1.3 μm grown by two‐step low‐pressure metalorganic chemical vapor deposition on a silicon substrate. An output power of 20 mW with an external quantum efficiency of 16% at room temperature has been obtained. A threshold current as low as 45 mA under cw operation at room temperature has been measured. The first cw aging test at room temperature, at 2 mW during 5 h, shows a very low degradation (ΔI/I≤5%).
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Far‐infrared absorption by oxygen in silicon

Hiroshi Yamada‐Kaneta, Tsutomu Ogawa, Shuichi Muraishi, Chioko Kaneta, and Kunihiko Wada

Appl. Phys. Lett. 53, 2391 (1988); http://dx.doi.org/10.1063/1.100240 (3 pages)

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Far‐infrared absorption measurements in the 14–50 cm−1 range have been performed for oxygen containing silicon crystals in a temperature range of 4.2–35 K. In addition to the previously reported absorption peaks at 29.3, 37.8, 43.3, and 49.0 cm−1 [D. R. Bosomworth, W. Hayes, A. R. L. Spray, and G. D. Watkins, Proc. R. Soc. London A 317, 133 (1970)], a fine structure with peaks at 25.3, 28.3, 30.2, and 33.3 cm−1 has been found, which is considered to be a sideband caused by a coupling between the off‐center excitation of the interstitial oxygen and other anharmonic localized excitation of an energy of about 1 cm−1 hc.
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78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
61.72.jd Vacancies
61.72.jj Interstitials
78.30.Fs III-V and II-VI semiconductors

Tensile stress variations of chemically etched GaAs films grown on Si substrates

Henry P. Lee, Xiaoming Liu, Hong Lin, John S. Smith, Shyh Wang, Yi‐He Huang, Peter Yu, and Yi‐Zhu Huang

Appl. Phys. Lett. 53, 2394 (1988); http://dx.doi.org/10.1063/1.100241 (3 pages) | Cited 30 times

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Photoluminescence (PL) at 77 K is used to study tensile stress variations in chemically etched stripes of a 3‐μm‐thick GaAs film grown on Si substrate. The etched patterns consist of 1‐mm‐long stripes with widths ranging from 100 to 4 μm and 4 μm by 4 μm squares. We observed monotonic shift of PL peaks towards shorter wavelength for decreasing stripe width. In particular, when the width of the stripe is less than 7 μm, tensile stress is essentially uniaxial as evident from the magnitude of shift in PL peaks. The polarization characteristics of the PL spectra of these uniaxially stressed stripes are investigated and found to agree well with theoretical predictions.
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68.60.Bs Mechanical and acoustical properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.65.-b Surface treatments
78.55.Cr III-V semiconductors

Surface orientation transitions in surface stabilized ferroelectric liquid crystal structures

Jiuzhi Xue, Noel A. Clark, and Michael R. Meadows

Appl. Phys. Lett. 53, 2397 (1988); http://dx.doi.org/10.1063/1.100242 (3 pages) | Cited 38 times

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We provide direct evidence, using simultaneously total internal reflection and polarized optical microscopy, for the existence of two interface stabilized director n‐polarization P orientation states at a ferroelectric liquid crystal (FLC)‐solid interface. The states are separated by a first‐order orientation transition, having n nearly parallel to the surface, opposite orientations of the component of P normal to the surface, with the state having P directed into the FLC being of lower energy. Any unswitched layer is less than 20 Å in thickness.
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61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
61.30.Eb Experimental determinations of smectic, nematic, cholesteric, and other structures
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
FREE

Erratum: Novel optical approach to atomic force microscopy [Appl. Phys. Lett. 53, 1045 (1988)]

Gerhard Meyer and Nabil M. Amer

Appl. Phys. Lett. 53, 2400 (1988); http://dx.doi.org/10.1063/1.100425 (3 pages) | Cited 102 times

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Abstract Unavailable
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68.35.B- Structure of clean surfaces (and surface reconstruction)
68.35.Gy Mechanical properties; surface strains
68.37.-d Microscopy of surfaces, interfaces, and thin films
99.10.Cd Errata

Li‐doped ZnSe epitaxial layers by ion implantation

Tokuo Yodo and Ken Yamashita

Appl. Phys. Lett. 53, 2403 (1988); http://dx.doi.org/10.1063/1.100243 (3 pages) | Cited 16 times

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Li+ ions were implanted into undoped high crystalline quality ZnSe epilayers grown by metalorganic vapor phase epitaxy. Thermal annealing after ion implantation was performed between 451 and 757 °C. The total photoluminescence intensity (measured at 77 K) of implanted layers before annealing was two orders of magnitude less than that of an as‐grown one because of the Li+ ion damage. As the annealing temperature was increased, however, the damage was reduced and the photoluminescence intensities of two main peaks (band‐edge emission and strong free to acceptor transition emission) became intense without generating deep centers. At 4.2 K, the only emission observed was associated with acceptor bound exciton and donor acceptor pair recombination in the near‐band‐edge region.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Et II-VI semiconductors

Cooling of a carrier plasma in germanium investigated with subpicosecond infrared pulses

H. Roskos, B. Rieck, A. Seilmeier, and W. Kaiser

Appl. Phys. Lett. 53, 2406 (1988); http://dx.doi.org/10.1063/1.100244 (3 pages) | Cited 13 times

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An intense light pulse of 1.0 eV photons generates a hot‐carrier plasma in germanium with a density of several 1017 cm−3. Cooling of the carriers results in a rise of the transmission at ℏω=1.0 eV within a few picoseconds. Three carrier‐phonon interactions based on deformation potential scattering contribute to the carrier relaxation: electron and hole intravalley scattering and intervalley electron scattering. The interaction constants for carrier cooling do not depend on lattice temperature between 30 and 300 K.
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72.30.+q High-frequency effects; plasma effects
71.38.-k Polarons and electron-phonon interactions
78.47.-p Spectroscopy of solid state dynamics
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Raman spectroscopy of InSb/CdTe heterostructures: Improved interface quality obtained by Cd overpressure during molecular beam epitaxial growth

D. R. T. Zahn, R. H. Williams, T. D. Golding, J. H. Dinan, K. J. Mackey, J. Geurts, and W. Richter

Appl. Phys. Lett. 53, 2409 (1988); http://dx.doi.org/10.1063/1.100245 (2 pages) | Cited 11 times

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In recent photoemission and Raman experiments interfacial layers of indium telluride together with liberated antimony were found to be formed during the molecular beam epitaxial growth of CdTe on InSb(100) at elevated substrate temperatures (TS≥200 °C). We have previously suggested that the application of a sufficiently large Cd overpressure during growth is likely to suppress the formation of interfacial layers and enable successful epitaxial growth of CdTe. In this letter we present Raman spectra revealing that a flux ratio of Cd/Te=3 during growth effectively suppresses indium telluride formation leading to largely improved InSb/CdTe interfaces.
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78.30.Fs III-V and II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)

Growth and diffusion of abrupt beryllium‐doped profiles in gallium arsenide by organometallic vapor phase epitaxy

M. J. Tejwani, H. Kanber, B. M. Paine, and J. M. Whelan

Appl. Phys. Lett. 53, 2411 (1988); http://dx.doi.org/10.1063/1.100412 (3 pages) | Cited 11 times

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We have grown abrupt beryllium‐doped profiles in gallium arsenide by organometallic vapor phase epitaxy. Secondary‐ion mass spectroscopy is used to study the annealing behavior of profiles with beryllium concentrations of 2×1018 cm−3. The diffusion fronts are non‐Gaussian and abrupt. Estimates of the diffusion coefficient of beryllium in gallium arsenide are obtained assuming a quadratic dependence on concentration. The beryllium diffusion coefficient is approximately 10−15 cm2/s at 825 °C and is at least an order of magnitude less than that reported for zinc profiles grown by organometallic vapor phase epitaxy. In addition, we have also observed anomalous surface tailing during growth which is very similar to that reported during beryllium doping by molecular beam epitaxy.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase
66.30.Ny Chemical interdiffusion; diffusion barriers

Effect of the sign of misfit strain on the dislocation structure at interfaces of heteroepitaxial GaAsxP1−x films

J. Petruzzello and M. R. Leys

Appl. Phys. Lett. 53, 2414 (1988); http://dx.doi.org/10.1063/1.100246 (3 pages) | Cited 15 times

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It was shown, with the use of transmission electron microscopy, that the dislocation structure at interfaces of heteroepitaxial GaAsxP1−x films is dependent on the sign of the misfit strain. Under tensile strain the interface contains a square grid network of both perfect and partial misfit dislocations. The dislocations are straight and exist predominantly along 〈110〉 directions. This configuration of misfit dislocations is consistent with the nucleation of partial dislocations in tensile strained films. The compressive interface also contains a network of misfit dislocations many of which have curved segments. This indicates that a cross slip mechanism has occurred that is only possible with a perfect dislocation movement. This result supports the nucleation of perfect dislocations in films under a compressive strain. The different structural characteristics of the tensile and compressive systems can play a significant role in subsequent processing or devices made from them.
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68.35.Dv Composition, segregation; defects and impurities
68.60.Bs Mechanical and acoustical properties
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Reduced backgating effect in modulation‐doped field‐effect transistors by p‐n junction isolation

M. B. Patil, D. Mui, S. Kalem, and H. Morkoç

Appl. Phys. Lett. 53, 2417 (1988); http://dx.doi.org/10.1063/1.100226 (3 pages) | Cited 1 time

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Reduced backgating in modulation‐doped field‐effect transistors (MODFETs) is achieved by p‐n junction isolation. Before growing buffer layer for transistors, an AlGaAs p‐n junction is included for isolating devices. Backgating characteristics are measured as a function of mesa depth and a dramatic reduction in backgating is observed when the mesas reach beyond the p‐n junction. The dc performance of the MODFET is found to be comparable to previous results without such a p‐n junction. Following this approach, great reduction in crosstalk between devices could be obtained in digital circuits.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Light hole interband transitions in HgTe‐HgCdTe superlattices

J. N. Schulman, O. K. Wu, E. A. Patten, Jeong W. Han, Y. Lansari, L. S. Kim, J. W. Cook, and J. F. Schetzina

Appl. Phys. Lett. 53, 2420 (1988); http://dx.doi.org/10.1063/1.100227 (3 pages) | Cited 16 times

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The light hole to conduction band optical transition has been identified in the room‐temperature absorption spectra of several high quality HgTe‐HgCdTe superlattices, in addition to the familiar heavy hole to conduction band transitions. The observation of the light hole transition, coupled with a more accurate determination of the superlattice layer thicknesses, allows the superlattice band gap and the HgTe‐HgCdTe valence band offset to be determined more precisely than previously possible. A two‐band tight‐binding model was used to calculate the transition energies to compare with the optical data. The valence band offset for the HgTe‐Hg0.15 Cd0.85 Te interface was determined to be 300±25 meV.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.61.Ga II-VI semiconductors

Schottky barrier height of InxAl1−xAs epitaxial and strained layers

P. Chu, C. L. Lin, and H. H. Wieder

Appl. Phys. Lett. 53, 2423 (1988); http://dx.doi.org/10.1063/1.100228 (3 pages) | Cited 24 times

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The Schottky barrier height of n‐type semiconducting and semi‐insulating InxAl1−xAs grown by molecular beam epitaxy has been determined on the lattice‐matched composition, x=0.523, in tension and in compression relative to their (110) oriented InP substrates. For the semiconducting material in the composition range 0.43<x<0.62, the barrier height is ϕbn=0.62±0.05 eV while the anomalous rise and saturation of ϕbn at 1.2 eV of the semi‐insulating material, within the same composition range, is attributed to the presence of AlAs clusters within an InxAl1−xAs matrix.
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73.30.+y Surface double layers, Schottky barriers, and work functions
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors

Application of spectroscopic ellipsometry to complex samples

J. L. Freeouf

Appl. Phys. Lett. 53, 2426 (1988); http://dx.doi.org/10.1063/1.100411 (3 pages) | Cited 15 times

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Several heterostructure samples of varying complexity were studied by spectroscopic ellipsometry. The analysis of this data, requiring computer modeling for optimum correlation between model and experiment, demonstrates the ability of this technique to apply multiparameter analysis to complex samples. Our results provide an absolute measure of up to seven material parameters, with 90% confidence limits in the range 0.1–2% for at least the four most sensitive parameters. Such accuracies are improved by a factor of 5–10 over previous reports for such complex samples. Furthermore, the method is demonstrated to provide sensitive detection of interfaces, even when buried under ≥0.5 μm of GaAs.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
07.60.Fs Polarimeters and ellipsometers
68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Infrared absorption of electron irradiation induced deep defects in semi‐insulating GaAs

M. O. Manasreh and D. W. Fischer

Appl. Phys. Lett. 53, 2429 (1988); http://dx.doi.org/10.1063/1.100229 (3 pages) | Cited 17 times

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Electron irradiation induced defects in semi‐insulating GaAs grown by the liquid‐encapsulated Czochralski technique were studied using infrared absorption spectroscopy. A broad peak (P1) and a shoulder (P2) were observed in the infrared absorption spectra of the irradiated materials at 0.98 and 0.78 eV, respectively. The electron‐phonon coupling strength as well as the Franck–Condon shift of P1 was estimated from the temperature dependence of the linewidth. The annealing kinetics between 375 and 450 °C show that the P1 defect vanishes by a long‐range migration process with an enthalpy of 0.78±0.02 eV. A speculation for the atomic structure of P1 is presented.
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71.55.Eq III-V semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
61.80.Fe Electron and positron radiation effects
78.30.Fs III-V and II-VI semiconductors
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