APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

19 Dec 1988

Volume 53, Issue 25, pp. 2465-2568

Page 1 of 2 Pages Next Page | Jump to Page

All‐optical routing networks based on bistable interferometers

G. S. Buller, C. R. Paton, S. D. Smith, and A. C. Walker

Appl. Phys. Lett. 53, 2465 (1988); http://dx.doi.org/10.1063/1.100214 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
The possibility of using bistable nonlinear Fabry–Perot interferometers as wide‐band data transparent all‐optical spatial switches has been investigated. It has been shown that three such devices, switching between transmitting and reflecting states, can form a 1×4 optical routing network: controlled purely by coded header pulses, preceding the data stream. The prospects for developing the performance of switches of this type towards the level required in practical telecommunications systems are discussed.
Show PACS
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.81.Wg Other fiber-optical devices
07.60.Ly Interferometers

Distortion of infrared picosecond pulses after propagation in atmospheric air

A. Seilmeier, M. Wörner, H.‐J. Hübner, and W. Kaiser

Appl. Phys. Lett. 53, 2468 (1988); http://dx.doi.org/10.1063/1.100215 (3 pages)

Full Text: | Download PDF

Show Abstract
Significant pulse distortion of infrared pulses is observed at frequencies where gaseous components of air have resonant transitions. For instance, coherent interaction with absorption lines of water vapor between 6 and 8 μm gives drastic effects after a pulse propagation as short as 80 cm. Experimental data are compared with model calculations in the small area pulse limit. A dephasing time of T2=50 ps is found for a rovibrational transition at ν=1576.2 cm−1 at atmospheric pressure.
Show PACS
42.68.Wt Remote sensing; LIDAR and adaptive systems
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.25.Lc Birefringence
42.68.Ay Propagation, transmission, attenuation, and radiative transfer
42.68.Bz Atmospheric turbulence effects

High‐power operation in self‐sustained pulsating AlGaAs semiconductor lasers with multiquantum well active layer

T. Tanaka, T. Kawano, and T. Kajimura

Appl. Phys. Lett. 53, 2471 (1988); http://dx.doi.org/10.1063/1.100216 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Self‐sustained pulsating optical power and kink level in AlGaAs semiconductor lasers are remarkably improved by introducing a multiquantum well (MQW) structure in the active layer. Stable fundamental transverse mode operation at output power up to 50 mW and self‐sustained pulsation at output power up to 40 mW are obtained simultaneously for MQW lasers with antireflective and high‐reflective coatings on the facets. Low‐noise characteristics (relative intensity noise of less than 10−13 Hz−1 under 3–4% optical feedback) are obtained in the output power range from 7 to 17 mW in MQW lasers with high‐reflective coating on the rear facet. These results suggest that low‐noise high‐power characteristics can be achieved in self‐sustained pulsating lasers with a MQW active layer.
Show PACS
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Fiber optic distributed thermal sensor

A. Zur and A. Katzir

Appl. Phys. Lett. 53, 2474 (1988); http://dx.doi.org/10.1063/1.100217 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
A novel concept of a fiber optic distributed sensor is presented. In particular, we describe a distributed thermal sensor formed by inducing a deliberated absorption in an infrared optical fiber. The increased absorption coefficient αab of this modified fiber determines the linear sensing length of the distributed thermal sensor. When part of the modified fiber is heated, infrared radiation is generated in the fiber and transmitted through it to its distal face. Measuring this radiation power with a radiometer, we are able to determine the average spatial temperature distribution along the fiber sensing length.
Show PACS
42.81.Pa Sensors, gyros
07.20.Dt Thermometers
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects

Effusion of deuterium from deuterated‐fluorinated amorphous silicon under illumination

R. Weil, A. Busso, and W. Beyer

Appl. Phys. Lett. 53, 2477 (1988); http://dx.doi.org/10.1063/1.100218 (3 pages) | Cited 12 times

Full Text: | Download PDF

Show Abstract
Temperature‐dependent deuterium effusion experiments were performed on deuterated‐fluorinated amorphous silicon containing 25% D and 0.5% F. Evolution was made in the dark and under up to AM1 illumination. It was found that illumination enhanced effusion. The effect could be explained by an increased D diffusion, caused by enhanced SiD bond breaking resulting from energy supplied by the decay of photocarriers to midgap states.
Show PACS
66.30.J- Diffusion of impurities
82.30.Lp Decomposition reactions (pyrolysis, dissociation, and fragmentation)
72.40.+w Photoconduction and photovoltaic effects
68.55.-a Thin film structure and morphology

Electronic structure modification induced by ion irradiation during film growth of Cu and Pd

F. Parmigiani and E. Kay

Appl. Phys. Lett. 53, 2480 (1988); http://dx.doi.org/10.1063/1.100219 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
Cu and Pd thin films grown under particular conditions of ion irradiation exhibit a lattice spacing expansion and a high density of lattice defects. As a consequence of this crystallographic disorder the Fermi edge of these systems is located at a higher binding energy, while the electronic core levels are broadened and shifted upward ≊0.35 eV, as shown by x‐ray photoelectron spectroscopy measurements. This letter demonstrates that the electronic structure modifications observed in these materials can be accounted for on the basis of the measured lattice parameter and lattice disorder invoking an energy band structure model for fcc metals and self‐consistent field wave function computations.
Show PACS
61.80.Jh Ion radiation effects
68.55.-a Thin film structure and morphology
71.20.-b Electron density of states and band structure of crystalline solids
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Formation of epitaxial Si1−xGex films produced by wet oxidation of amorphous SiGe layers deposited on Si(100)

S. M. Prokes, W. F. Tseng, and A. Christou

Appl. Phys. Lett. 53, 2483 (1988); http://dx.doi.org/10.1063/1.100220 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
Epitaxial SiGe/Si structures have been formed by wet oxidation of amorphous SiGe films. Amorphous, 1000‐Å‐thick Si0.86Ge0.14 films were electron beam evaporated onto RCA cleaned Si(100) substrates at a background pressure of 1×10−7 Torr. They were then wet oxidized in an open tube furnace, at 900 °C for various times. They have been examined by reflective high‐energy electron diffraction and Rutherford backscattering. Results indicate the formation of an epitaxial SiGe layer following the oxidation, whereas a polycrystalline layer forms following a vacuum or nitrogen ambient anneal. It is suggested that the oxide contamination at the amorphous SiGe/Si interface is too high to allow solid phase epitaxial growth to occur in an oxygen‐free ambient, but during the oxidation process, some native oxide is dissolved due to a gradient of silicon from the substrate to the growing SiO2 on the surface. This allows grains of the SiGe alloy to orient with respect to the substrate, and secondary grain growth occurs during the oxidation process.
Show PACS
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.65.-b Surface treatments
81.15.Np Solid phase epitaxy; growth from solid phases
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Trapping of Au in Si during pulsed laser irradiation: A comparison with ion beam induced segregation

F. Priolo, J. M. Poate, D. C. Jacobson, J. L. Batstone, J. S. Custer, and Michael O. Thompson

Appl. Phys. Lett. 53, 2486 (1988); http://dx.doi.org/10.1063/1.100221 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
Liquid phase nonequilibrium segregation and trapping of Au in Si induced by Q‐switched laser irradiation are reported. Depending on the incident laser energy density, irradiation results in either amorphization or recrystallization of a near surface layer. In the latter case, at interface velocities of 9 m/s, the segregation coefficient is 0.1±0.02 and Au is trapped in near‐substitutional lattice sites at concentrations of 0.5 at. %. These results are compared with recent data on solid phase, ion beam induced segregation, where Au at the amorphous‐crystal interface is trapped on nonunique lattice sites.
Show PACS
66.30.J- Diffusion of impurities
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
61.80.Jh Ion radiation effects
68.35.Fx Diffusion; interface formation

Elimination of pressure‐induced fluorescence in diamond anvils

Jon H. Eggert, Kenneth A. Goettel, and Isaac F. Silvera

Appl. Phys. Lett. 53, 2489 (1988); http://dx.doi.org/10.1063/1.100222 (3 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
At pressures above one megabar (100 GPa) in high‐pressure diamond anvil cell experiments the ruby fluorescence signal needed for pressure calibration is increasingly difficult to measure. A primary cause of this difficulty is the presence of an intense pressure‐induced diamond fluorescence. We give a tentative identification of this pressure‐induced fluorescence and report on a technique for the elimination of this fluorescence. We demonstrate that weak ruby signals, completely hidden by diamond fluorescence, are now easily measured with our technique.
Show PACS
78.47.-p Spectroscopy of solid state dynamics
07.35.+k High-pressure apparatus; shock tubes; diamond anvil cells
61.72.-y Defects and impurities in crystals; microstructure
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

High‐temperature stability of Si/SiO2 interfaces and the influence of SiO flux on thermomigration of impurities in SiO2

G. K. Celler and L. E. Trimble

Appl. Phys. Lett. 53, 2492 (1988); http://dx.doi.org/10.1063/1.100527 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
We analyze experimentally unidirectional mass transport of As implanted into a SiO2 film covered with Si and heated to 1405 °C in a temperature gradient. The data can only be explained if we postulate that the thermomigration process is mediated by a flux of SiO molecules, flowing from the Si/SiO2 interfaces into the oxide. From the delay times before the onset of As drift, we estimate diffusivity of SiO at ∼4×10−13 cm2 /s at 1405 °C. The data also explain the apparent dichotomy between high‐temperature dissociation of SiO2 , measured experimentally and predicted by thermodynamic arguments, and the ability to heat Si‐coated SiO2 up to the melting point of Si at 1412 °C without any loss of the oxide integrity. The latter is possible because coated SiO2 saturates with SiO, resulting in steady‐state conditions.
Show PACS
68.35.Fx Diffusion; interface formation
68.60.Dv Thermal stability; thermal effects
66.30.H- Self-diffusion and ionic conduction in nonmetals
66.30.J- Diffusion of impurities

Superhard material comparable in hardness to diamond

Andrzej R. Badzian

Appl. Phys. Lett. 53, 2495 (1988); http://dx.doi.org/10.1063/1.100528 (3 pages) | Cited 43 times

Full Text: | Download PDF

Show Abstract
Superhard boron suboxides, with hardness close to that of diamond, were synthesized from boron/boron oxide mixtures. Such hardness is expected when a material’s molar volume approaches the value characteristic for diamond. These materials consist of boron‐rich phases belonging to the boron‐oxygen system. The phase which contains 4 at. % oxygen and a crystal structure related to β‐rhombohedral boron can scratch diamond faces. During scratching of diamond the suboxide is worn also, and the wear debris is amorphized. Wear on the {100} diamond faces results from a cleavage mechanism which leaves a rough surface covered with cleaved {111} microfaces. The {100} faces are more easily abraded than the {111} diamond faces. Wear on {111} faces consumes much more energy and leaves grooves of plastically deformed diamond.
Show PACS
62.20.Qp Friction, tribology, and hardness
62.20.M- Structural failure of materials
81.20.Ev Powder processing: powder metallurgy, compaction, sintering, mechanical alloying, and granulation
61.50.Ks Crystallographic aspects of phase transformations; pressure effects

Non‐Newtonian strain relaxation in highly strained SiGe heterostructures

Brian W. Dodson and Jeffrey Y. Tsao

Appl. Phys. Lett. 53, 2498 (1988); http://dx.doi.org/10.1063/1.100223 (3 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
Semiconductor strained‐layer structures routinely incorporate layer stresses in the GPa regime. At these stresses, models for strain relaxation cannot be based on material parameters determined at small stresses. A new analysis of experimental data on strain relaxation in metastable SiGe/Ge(001) strained‐layer structures allows the effects of high stresses on relaxation kinetics to be determined. The activation energy for plastic flow is found to decrease roughly linearly with increasing stress, in a manner analogous to non‐Newtonian viscous flow in fluids. As a result, macroscopic relaxation occurs more easily and becomes dramatically more abrupt as the growth temperature is reduced than would be extrapolated from the small‐stress behavior. Implications for design and fabrication of metastable strained‐layer devices are discussed.
Show PACS
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.Gy Mechanical properties; surface strains
68.55.-a Thin film structure and morphology
62.50.-p High-pressure effects in solids and liquids

Tailoring of hole eigenenergies in strained GaAsP/AlGaAs single quantum wells grown by atmospheric pressure organometallic chemical vapor deposition

Daniel C. Bertolet, Jung‐Kuei Hsu, and Kei May Lau

Appl. Phys. Lett. 53, 2501 (1988); http://dx.doi.org/10.1063/1.100224 (3 pages) | Cited 22 times

Full Text: | Download PDF

Show Abstract
In this letter we present experimental results demonstrating the effects of tensile strain on the ground‐state hole eigenenergies of strained GaAsP/AlGaAs quantum wells (QWs) grown by organometallic chemical vapor deposition. Low‐temperature photoluminescence (PL) spectra exhibit sharp, intense peaks corresponding to the n=1 heavy and light hole related QW transitions. The relative positions of the peaks depend on both the strain and the width of the QWs. In wider wells (120 Å), the lowest energy, and dominant PL peak was assigned to the light hole, and for a 80 Å well, the heavy and light hole peaks merged.
Show PACS
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.60.Bs Mechanical and acoustical properties

Effect of substrate temperature on migration of Si in planar‐doped GaAs

M. Santos, T. Sajoto, A. Zrenner, and M. Shayegan

Appl. Phys. Lett. 53, 2504 (1988); http://dx.doi.org/10.1063/1.100225 (3 pages) | Cited 45 times

Full Text: | Download PDF


See Also: Erratum

Show Abstract
Quantum oscillations in the magnetoresistance of GaAs δ (or planar) doped with Si are analyzed to obtain the electron densities of the electric subbands. We compare these densities with the results of self‐consistently calculated subband structures of δ‐doped GaAs in which the spread of the dopant atoms (Si) in the growth direction is a fitting parameter. The results indicate that there is negligible spread in structures grown at a substrate temperature TS ≲530 °C, while in structures grown at higher TS there is measurable spread which increases with TS. For TS =640 °C, the Si spread is determined to be ≂220 Å. An examination of the three‐dimensional Si densities in these layers indicates that the dominant mechanism for the spreading of Si for TS >600 °C is the migration of Si to satisfy the solid solubility limit.
Show PACS
66.30.J- Diffusion of impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors

Line spectrum of the interstitial iron donor in silicon

J. Olajos, B. Bech Nielsen, M. Kleverman, P. Omling, P. Emanuelsson, and H. G. Grimmeiss

Appl. Phys. Lett. 53, 2507 (1988); http://dx.doi.org/10.1063/1.100210 (3 pages) | Cited 20 times

Full Text: | Download PDF

Show Abstract
Photothermal ionization spectroscopy and infrared transmission measurements have been carried out on iron‐doped silicon. A series of sharp lines in the range from 6100 to 6400 cm−1 was observed with both techniques. Photoionization cross‐section spectra were determined by photothermal ionization spectroscopy and photoelectron paramagnetic resonance, and it is concluded that the lines originate from electronic transitions to excited shallow donor states at the interstitial iron impurity in the neutral charge state Fe0i. The lines and the Fe0i ‐related electron paramagnetic resonance signal annealed out together at approximately 170 °C. The line spectra are analyzed in terms of three overlapping donor series and the origins of these are discussed.
Show PACS
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
71.55.Ht Other nonmetals
76.30.Fc Iron group (3d) ions and impurities (Ti-Cu)
72.40.+w Photoconduction and photovoltaic effects

Cyclotron resonance measurements of electron effective mass in strained AlGaAs/InGaAs/GaAs pseudomorphic structures

C. T. Liu, S. Y. Lin, D. C. Tsui, H. Lee, and D. Ackley

Appl. Phys. Lett. 53, 2510 (1988); http://dx.doi.org/10.1063/1.100409 (3 pages) | Cited 33 times

Full Text: | Download PDF

Show Abstract
Electron effective mass in the InxGa1−xAs conduction channel of strained AlGaAs/InGaAs/GaAs pseudomorphic structures is measured using far‐infrared cyclotron resonance techniques at 4.2 K. The measured cyclotron mass is heavier than the conduction‐band‐edge mass in bulk InxGa1−xAs. This result is explained by the large two‐dimensional electron density realized in the structure, and the lattice strain that exists in the InxGa1−xAs layer.
Show PACS
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
76.40.+b Diamagnetic and cyclotron resonances
78.20.Ls Magneto-optical effects

Influence of p‐InP buffer layers on submicron InGaAs/InP junction field‐effect transistors

K. Steiner, U. Seiler, K. Heime, and E. Kuphal

Appl. Phys. Lett. 53, 2513 (1988); http://dx.doi.org/10.1063/1.100194 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
Strong carrier confinement in the active region of field‐effect transistors is important for submicron devices. It is shown that in InGaAs junction field‐effect transistors (JFETs) the introduction of a p‐type InP buffer layer with high p‐type dopant concentration (NA=2×1017 cm−3) supresses short‐channel effects even in the submicron gate regime. By lowering the p‐type concentration below 1017 cm−3 and reducing the thickness of the buffer layer, higher output conductances, threshold voltage shifts, and worse pinch‐off behavior result especially at shorter gate lengths. InGaAs JFETs without a buffer layer exhibit tremendous short‐channel effects. It is concluded that high potential barriers at the channel substrate heterointerface are necessary for control of InGaAs JFET performance over a wide range of gate length.
Show PACS
85.30.Tv Field effect devices
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Simulation of saturation and relaxation of intersubband absorption in doped quantum wells

D. J. Newson and A. Kurobe

Appl. Phys. Lett. 53, 2516 (1988); http://dx.doi.org/10.1063/1.100195 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
We have simulated the saturation and relaxation of intersubband absorption in doped GaAs quantum wells, in which radiation excites electrons between the ground and higher subbands. Screened longitudinal optic (LO) phonon, hot LO phonon, acoustic phonon, intrasubband scattering, conduction‐band nonparabolicity, and intervalley scattering were included in our simulation. We find that the change in absorption relaxes with a time constant of about 5 ps after pulsed excitation. Under continuous excitation the absorption saturates as a nearly homogeneously broadened system.
Show PACS
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
63.20.K- Phonon interactions

Atomic‐layer epitaxy of (111)CdTe on BaF2 substrates

W. Faschinger, H. Sitter, and P. Juza

Appl. Phys. Lett. 53, 2519 (1988); http://dx.doi.org/10.1063/1.100529 (3 pages) | Cited 12 times

Full Text: | Download PDF

Show Abstract
Atomic‐layer epitaxy of (111)CdTe single crystalline films on (111)BaF2 substrates is investigated. It is shown that a set of growth parameters exists in which the average growth per cycle of opening and closing the shutters of the constituent element sources is one monolayer. In a substrate temperature range between 260 and 285 °C the growth process is self‐regulative, that means, it is independent of the Te beam intensity and the substrate temperature. At substrate temperatures higher than 285 °C growth is still self‐regulative, but the average growth rate per cycle is less than one monolayer.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Monolithic integration of a short‐length GaInAs photoconductor with a GaAs/GaAlAs optical waveguide on a GaAs semi‐insulating substrate

F. Mallecot, J. F. Vinchant, M. Razeghi, D. Vandermoere, J. P. Vilcot, and D. Decoster

Appl. Phys. Lett. 53, 2522 (1988); http://dx.doi.org/10.1063/1.100196 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
We report the first fabrication of a Ga0.47In0.53As planar photoconductive detector, associated with a GaAs/GaAlAs rib waveguide grown on a semi‐insulating GaAs substrate, which needs a short‐length absorbing layer to detect the optical signal. Because of the GaAlAs epilayer, a GaInAs length of about 100 μm only is needed to detect 90% of the optical signal, accordingly to results predicted using a four‐layer model with complex refractive indices in each layer.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
72.40.+w Photoconduction and photovoltaic effects

InP:Yb layers grown by adduct metalorganic vapor phase epitaxy using Yb(MeCp)3

J. Weber, A. Molassioti, M. Moser, A. Stapor, F. Scholz, G. Hörcher, A. Forchel, A. Hammel, G. Laube, and J. Weidlein

Appl. Phys. Lett. 53, 2525 (1988); http://dx.doi.org/10.1063/1.100197 (3 pages) | Cited 12 times

Full Text: | Download PDF

Show Abstract
Highly doped InP:Yb layers have been grown by adduct metalorganic vapor phase epitaxy at atmospheric pressure. Yb(MeCp)3, where Me=CH3 and Cp=n5‐C5H5, was synthesized as Yb source material because of its relatively high vapor pressure at acceptable source temperatures. The layers were grown in a wide range of growth temperatures (560–670 °C) and Yb mole fractions (10−9–10−7). In photoluminescence experiments they showed strong Yb3+‐4f emission. The layers were further characterized by Hall measurements and secondary‐ion mass spectroscopy. In order to obtain n‐type InP:Yb samples with high carrier concentrations we have grown InP layers double doped with S and Yb.
Show PACS
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Cr III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Negative differential resistance in AlAs/NiAl/AlAs heterostructures: Evidence for size quantization in metals

N. Tabatabaie, T. Sands, J. P. Harbison, H. L. Gilchrist, and V. G. Keramidas

Appl. Phys. Lett. 53, 2528 (1988); http://dx.doi.org/10.1063/1.100198 (3 pages) | Cited 34 times

Full Text: | Download PDF

Show Abstract
We report on the first electron transport measurements in (Al,Ga)As/NiAl/(Al,Ga)As semiconductor‐metal‐semiconductor double heterostructures grown entirely by molecular beam epitaxy. For sufficiently thin NiAl films, a voltage‐controlled negative differential resistance region is observed in the axial current‐voltage characteristics of our AlAs/NiAl/AlAs double‐barrier structures. Room‐temperature peak‐to‐valley ratios as high as 2 have been obtained for a 33 Å NiAl layer. The general characteristics of this phenomenon are remarkably similar to the negative differential resistance observed in all‐semiconductor resonant tunneling structures. We believe that this effect can be attributed to electron size quantization in the thin metal film.
Show PACS
73.40.Vz Semiconductor-metal-semiconductor structures
73.61.At Metal and metallic alloys
73.40.Gk Tunneling
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Disordering of Si‐implanted GaAs‐AlGaAs superlattices by rapid thermal annealing

S.‐Tong Lee, G. Braunstein, P. Fellinger, K. B. Kahen, and G. Rajeswaran

Appl. Phys. Lett. 53, 2531 (1988); http://dx.doi.org/10.1063/1.100199 (3 pages) | Cited 27 times

Full Text: | Download PDF

Show Abstract
We have studied the disordering phenomenon in GaAs‐AlGaAs superlattices induced by Si implantation followed by rapid thermal annealing. Disordering has been detected in superlattices implanted with 220 keV Si+ at doses ≥1×1015 cm−2 and annealed at 1050 °C for 10 s. The amount of disordering saturates with time after 10 s annealing, whence the lattice damage caused by the implantation is predominantly annealed out and little Si diffusion detected. The transient disordering is attributed to defect‐induced layer intermixing occurring during the annealing of the implantation damage. The defect‐induced disordering has been simulated by solving two coupled diffusion equations for aluminum and vacancies, and good qualitative agreement with experimental results has been obtained.
Show PACS
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.72.U- Doping and impurity implantation
66.30.J- Diffusion of impurities

Insulating gate InGaAs/InP field‐effect transistors

H. Temkin, Y. K. Chen, P. Garbinski, T. Tanbun‐Ek, and R. A. Logan

Appl. Phys. Lett. 53, 2534 (1988); http://dx.doi.org/10.1063/1.100200 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Depletion mode heterostructure transistors with InGaAs channel have been fabricated by depositing the gate metallization directly on a semi‐insulating Fe:InP layer grown by metalorganic chemical vapor epitaxy. The quantum well channel layer, as thin as 100 Å, shows high electron mobility of 8000 V/cm2 s at room temperature and up to 55 000 V/cm2 s at 77 K. The enhanced gate breakdown voltage results in 1 μm gate devices with transconductance of 210 mS/mm and a complete pinch‐off at a low gate bias of −0.1 V. Preliminary high‐frequency measurements are also discussed.
Show PACS
85.30.Tv Field effect devices
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Column III and V ordering in InGaAsP and GaAsP grown on GaAs by metalorganic chemical vapor deposition

W. E. Plano, D. W. Nam, J. S. Major, K. C. Hsieh, and N. Holonyak

Appl. Phys. Lett. 53, 2537 (1988); http://dx.doi.org/10.1063/1.100201 (3 pages) | Cited 29 times

Full Text: | Download PDF

Show Abstract
Data are presented showing that GaAs1−y Py grown on GaAs by metalorganic chemical vapor deposition (MOCVD) at relatively low temperature (∼640 °C) exhibits ordering on the column V sublattice. These data, with electron diffraction data and impurity‐induced layer disordering data, show that column III site and column V site ordering is possible for the quaternary InGaAsP grown on GaAs by MOCVD at relatively low temperature (∼640 °C). Ordered InGaAsP grown on GaAs shifts in photoluminescence wavelength ∼130 meV higher in energy with disordering by annealing or by impurity‐induced intermixing.
Show PACS
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
78.55.Cr III-V semiconductors
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close