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26 Dec 1988

Volume 53, Issue 26, pp. 2579-2719

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Endothermic reaction aided crystal growth of 2‐methyl‐4‐nitroaniline and their electro‐optic properties

Yoshinobu Kubota and Tetsuzo Yoshimura

Appl. Phys. Lett. 53, 2579 (1988); http://dx.doi.org/10.1063/1.100534 (3 pages) | Cited 6 times

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We investigated relationships between the electro‐optic properties and the growth conditions for 2‐methyl‐4‐nitroaniline (MNA) thin‐film crystals. The crystal is grown by melt growth between two quartz substrates with a newly developed automatic control of the crystal growth, which utilizes an endothermic reaction. The electro‐optic effect decreases with increases in the maximum melt temperature. When MNA thin‐film crystals are grown from the melt at temperatures near the melting point, the figure of merit for electro‐optic phase retardation is the greatest. The value is twice that of the LiNbO3 crystal. By annealing, the figure of merit becomes three times as large as that of the LiNbO3 crystal. This is consistent with the expectations from second‐harmonic generation measurements. We also investigated the purity dependence of the electro‐optic effect. The electro‐optic effect drastically decreases with impurity, especially for purities <99.9%.
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78.66.Qn Polymers; organic compounds
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Near‐room‐temperature operation of Pb1−xSrxSe infrared diode lasers using molecular beam epitaxy growth techniques

Beate Spanger, U. Schiessl, A. Lambrecht, H. Böttner, and M. Tacke

Appl. Phys. Lett. 53, 2582 (1988); http://dx.doi.org/10.1063/1.100208 (2 pages) | Cited 37 times

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Double‐Heterostructure lasers have been fabricated with an active layer of PbSe sandwiched between cladding layers of Pb1−x Srx Se. They were operated up to T=290 K (17 °C) in pulsed and T=169 K in cw mode. This is the highest operational temperature in pulsed mode reported for lead salt lasers in the mid‐infrared. The emission wavelength tunes with temperature from 8.0 μm (T=20 K) to 4.4 μm (T=285 K).
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Type I–type II anticrossing and enhanced Stark effect in asymmetric coupled quantum wells

J. E. Golub, P. F. Liao, D. J. Eilenberger, J. P. Harbison, L. T. Florez, and Yehiam Prior

Appl. Phys. Lett. 53, 2584 (1988); http://dx.doi.org/10.1063/1.100209 (3 pages) | Cited 36 times

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We have observed the transition from type I (spatially direct) to type II (spatially indirect) in GaAs/AlGaAs asymmetric coupled quantum well structures at 10 K. The transition is manifested as a strong electric field induced quenching of the photoluminescence which correlates well with the results of a single particle calculation of the electron‐hole overlap. By properly designing the coupled well structure, photoluminescence quenching (90%–10%) is observed for a change in bias field of only 5 kV/cm. Observations of the absorption spectrum clearly demonstrate that the type I–type II transition occurs by an electronic level anticrossing. Owing to the large level repulsion, a Stark shift of 5 meV is observed when the bias field is switched by only 18 kV/cm.
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71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Laser‐induced damage in beta‐barium metaborate

H. Nakatani, W. R. Bosenberg, L. K. Cheng, and C. L. Tang

Appl. Phys. Lett. 53, 2587 (1988); http://dx.doi.org/10.1063/1.100535 (3 pages) | Cited 29 times

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Laser‐induced damage in beta‐barium metaborate (BBO) has been investigated at the wavelengths of 1064, 532, and 355 nm. The single‐shot bulk damage threshold of BBO is 50 GW/cm2 at 1064 nm, 48 GW/cm2 at 532 nm, and 25 GW/cm2 at 355 nm. Damage by multiple pulse irradiation has also been studied and the probabilistic nature of the damage is discussed. Brief comments are also made on the morphology of the damage.
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61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Laser action in chromium‐activated forsterite for near‐infrared excitation: Is Cr4+ the lasing ion?

V. Petričević, S. K. Gayen, and R. R. Alfano

Appl. Phys. Lett. 53, 2590 (1988); http://dx.doi.org/10.1063/1.100536 (3 pages) | Cited 126 times

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Room‐temperature pulsed laser action has been obtained in chromium‐activated forsterite (Cr:Mg2SiO4) for excitation of the near‐infrared absorption band of the system by the 1064 nm radiation from a Nd:YAG laser. The characteristics of laser emission are similar to those observed for 532 nm pumping. It is suggested that the laser action is due to a ‘‘center’’ other than the trivalent chromium (Cr3+), presumably the tetravalent chromium (Cr4+).
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78.45.+h Stimulated emission
42.55.Rz Doped-insulator lasers and other solid state lasers
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics
78.55.Hx Other solid inorganic materials

Chromium‐doped forsterite laser pumped with 1.06 μm radiation

Horacio R. Verdun, Leonard M. Thomas, Donna M. Andrauskas, Tom McCollum, and Albert Pinto

Appl. Phys. Lett. 53, 2593 (1988); http://dx.doi.org/10.1063/1.100537 (3 pages) | Cited 95 times

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Laser action in chromium‐doped forsterite (Cr@B:Mg2SiO4), pumped with a 1.064 μm Nd:YAG laser, was demonstrated for the first time. The free‐running laser emission is centered at 1.221 μm and has a spectral width of 28 nm. An efficiency of 8% has been achieved with an uncoated crystal produced by the laser‐heated‐pedestal growth method. The available evidence suggests that the laser action is due to Cr4+ in tetrahedral sites.
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42.55.Rz Doped-insulator lasers and other solid state lasers
78.45.+h Stimulated emission
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Temporal and spectral characteristics of soft x radiation from laser‐irradiated cylindrical cavities

R. Weber, P. F. Cunningham, and J. E. Balmer

Appl. Phys. Lett. 53, 2596 (1988); http://dx.doi.org/10.1063/1.100190 (3 pages) | Cited 8 times

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Cylindrical cavity targets with inner diameters between 200 and 300 μm have been irradiated with 4 J, 80 ps, Nd:glass laser pulses through a 100‐μm‐wide longitudinal slit. From the spatially resolved temporal and spectral behavior of the x‐ray emission along the axis, data on temperature and density of the expanding primary and secondary plasmas and of the region of collision have been obtained.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Coplanar vacuum photodiode for measurement of short‐wavelength picosecond pulses

J. Bokor, A. M. Johnson, W. M. Simpson, R. H. Storz, and P. R. Smith

Appl. Phys. Lett. 53, 2599 (1988); http://dx.doi.org/10.1063/1.100191 (3 pages)

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We have fabricated a vacuum photodiode in a coplanar stripline geometry. This device is capable of high quantum efficiency and picosecond response time. It may be particularly useful for diagnostics of picosecond soft x rays from laser‐produced plasmas.
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85.60.Dw Photodiodes; phototransistors; photoresistors
52.70.La X-ray and γ-ray measurements

Beam breakup instabilities in linear accelerators: Transition, phase mixing, and nonlinear focusing

D. G. Colombant and Y. Y. Lau

Appl. Phys. Lett. 53, 2602 (1988); http://dx.doi.org/10.1063/1.100172 (3 pages) | Cited 6 times

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The temporal and spatial evolution of the cumulative beam breakup instability (BBU) is analyzed numerically using a continuum model. It is found that neither phase mixing nor linear transverse focusing is sufficient to render BBU stable in a long pulse machine, when external damping is absent. A sufficiently strong nonlinear octupole focusing field may limit the BBU growth, however.
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41.75.Ht Relativistic electron and positron beams
52.35.Py Macroinstabilities (hydromagnetic, e.g., kink, fire-hose, mirror, ballooning, tearing, trapped-particle, flute, Rayleigh-Taylor, etc.)
29.20.Ej Linear accelerators
52.40.Mj Particle beam interactions in plasmas

Influence of a thin interfacial oxide layer on the ion beam assisted epitaxial crystallization of deposited Si

F. Priolo, A. La Ferla, C. Spinella, E. Rimini, G. Ferla, F. Baroetto, and A. Licciardello

Appl. Phys. Lett. 53, 2605 (1988); http://dx.doi.org/10.1063/1.100538 (3 pages) | Cited 10 times

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The epitaxial crystallization of chemical vapor deposited Si layers on 〈100〉 Si substrates with a thin interfacial oxide layer was induced by a 600 keV Kr beam in the temperature range 350–500 °C. During irradiation the single crystal‐amorphous interface velocity was measured in situ by monitoring the reflectivity of He‐Ne laser light. We show that a critical irradiation dose is needed before the interfacial oxide breaks down and epitaxial regrowth can take place. This critical dose depends exponentially on the reciprocal temperature with an activation energy of 0.44 eV.
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81.15.Np Solid phase epitaxy; growth from solid phases
61.80.Jh Ion radiation effects
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Epitaxial growth of ErAs on (100)GaAs

C. J. Palmstrøm, N. Tabatabaie, and S. J. Allen

Appl. Phys. Lett. 53, 2608 (1988); http://dx.doi.org/10.1063/1.100173 (3 pages) | Cited 73 times

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Successful growth of (100)ErAs single‐crystal films on (100)GaAs has been demonstrated. Reflection high‐energy electron diffraction, low‐energy electron diffraction (LEED), and Rutherford backscattering with channeling indicate single‐crystal growth. LEED from the ErAs shows a (1×1) structure. Overgrowth of GaAs on ErAs is found to be difficult due to the GaAs not wetting the ErAs surface and hence resulting in island growth. For a 150‐Å‐thick film metallic behavior is observed with resistivities 17 and 70 μΩ cm at 1.5 K and room temperature, respectively. Low‐temperature Hall measurements show the conduction to be dominated by electrons with an effective n‐type mobility in the range 360 cm2/V s at 1.35 K.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.At Metal and metallic alloys

Effect of post‐growth annealing on patterned GaAs on silicon

R. J. Matyi, W. M. Duncan, H. Shichijo, and H. L. Tsai

Appl. Phys. Lett. 53, 2611 (1988); http://dx.doi.org/10.1063/1.100174 (3 pages) | Cited 6 times

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We have investigated the effect of post‐growth thermal annealing on the defect surface of patterned GaAs on silicon. Significant improvements in defect structure of the patterned GaAs were observed by transmission electron microscopy (TEM) after short anneal times (15 min) at temperatures as low as 750 °C. At anneal temperatures of 950 °C, long‐range single‐crystal lateral regrowth of the original polycrystalline GaAs deposited over the amorphous patterning mask was observed. Micro‐Raman spectroscopic characterization of the GaAs grown on the oxide/nitride mask corroborated the TEM results by showing a significant improvement in the crystalline quality of patterned GaAs on silicon following post‐growth annealing.
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61.72.Bb Theories and models of crystal defects
68.35.Dv Composition, segregation; defects and impurities
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Heteroepitaxial growth of Ga0.51In0.49P/GaAs on Si by low‐pressure organometallic chemical vapor deposition

R. H. Horng, D. S. Wuu, and M. K. Lee

Appl. Phys. Lett. 53, 2614 (1988); http://dx.doi.org/10.1063/1.100175 (3 pages) | Cited 3 times

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In this letter we report on preliminary results of heteroepitaxial growth of Ga0.51In0.49P on Si with a GaAs interlayer by low‐pressure organometallic chemical vapor deposition (OMCVD). The surface morphologies and crystalline quality of the films were found to be critically dependent on the growth parameters of the initial GaAs buffer layer. Under optimum conditions, specular single‐crystal Ga0.51In0.49P epilayers can be reproducibly obtained. Capacitance‐voltage measurements show that the carrier distribution in the grown layer is very uniform. The 77 K photoluminescence spectrum exhibits a strong near‐band‐edge emission with a half‐width of 22 meV. These results can compete with those reported previously for the OMCVD‐grown GaxIn1−xP on GaAs substrates.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
73.61.Ey III-V semiconductors

Thermally induced metastability in amorphous silicon thin‐film transistors

Yi Sang Lee, Hye Yong Chu, Jin Jang, Byung Seong Bae, Kwang Soo Choi, and Choochon Lee

Appl. Phys. Lett. 53, 2617 (1988); http://dx.doi.org/10.1063/1.100176 (3 pages)

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The effect of thermal quenching on the characteristics of hydrogenated amorphous silicon thin‐film transistors using amorphous silicon nitride as a gate insulator has been studied. We find that rapid quenching produces changes in the field‐effect conductance which are completely reversed by annealing. Rapid quenching produces a decrease in the off conductance and an increase of the on conductance. The decrease of the off conductance is due to the increase of the dangling bond density. On the other hand, the increase of the on conductance can be explained as either the decrease of the interface state density between amorphous silicon and the silicon nitride or the decrease in source series resistance by thermal quenching.
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85.30.Tv Field effect devices
81.40.Rs Electrical and magnetic properties related to treatment conditions
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Hot‐carrier light emission from silicon metal‐oxide‐semiconductor devices

M. Herzog and F. Koch

Appl. Phys. Lett. 53, 2620 (1988); http://dx.doi.org/10.1063/1.100177 (3 pages) | Cited 29 times

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Light emitted from energetic electrons and holes near the drain region of Si field‐effect transistor devices is measured spectrally resolved in the important energy range about the band gap. Using a sensitive Ge detector we examine the spectral range from 0.75 to 1.55 eV in order to identify and study the recombination of impact ionization generated electron‐hole pairs. Two distinct recombination lines are observed superposed on a continuum background.
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78.60.-b Other luminescence and radiative recombination
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Correlation of photoluminescence measurements with the composition and electronic properties of chemically etched CdTe surfaces

Z. Sobiesierski, I. M. Dharmadasa, and R. H. Williams

Appl. Phys. Lett. 53, 2623 (1988); http://dx.doi.org/10.1063/1.100178 (3 pages) | Cited 30 times

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We have performed photoluminescence (PL) measurements on chemically etched single‐crystal p‐CdTe. In addition, x‐ray photoemission measurements have been used as a guide to surface stoichiometry for each chemical treatment. The relative intensities of the 0.875±0.005 eV and 1.125±0.005 eV PL bands are seen to be linked to the preferential depletion of either Cd or Te from the CdTe surface. Furthermore, the energies of these deep level transitions measured at T=4 K show remarkable agreement with the two values of Schottky barrier, Φb=0.72±0.02 eV and Φb=0.93±0.02 eV, normally obtained at room temperature for Au and Sb contacts to n‐CdTe.
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78.55.Et II-VI semiconductors
73.30.+y Surface double layers, Schottky barriers, and work functions
68.55.Nq Composition and phase identification
81.40.Tv Optical and dielectric properties related to treatment conditions

Lateral solid phase epitaxy of amorphous Si films by selective surface doping method of P atoms

Toru Dan, Hiroshi Ishiwara, and Seijiro Furukawa

Appl. Phys. Lett. 53, 2626 (1988); http://dx.doi.org/10.1063/1.100179 (3 pages) | Cited 4 times

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Lateral solid phase epitaxy (L‐SPE) of amorphous Si (a‐Si) films by a selective surface doping method of P atoms was investigated, in which P atoms were doped only in the surface layers of a‐Si films. It was found that the L‐SPE growth rate and the growth length from the seed region were changed by thickness of the P‐doped layer, but they weakly depended on the thickness of the a‐Si film. It was also found from cross‐sectional transmission electron microscopy that the growth front of L‐SPE in the surface P‐doped sample was composed of a single facet. In order to explain these experimental results, a L‐SPE growth model in the surface P‐doped sample is proposed.
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81.15.Np Solid phase epitaxy; growth from solid phases
68.35.Dv Composition, segregation; defects and impurities
68.55.-a Thin film structure and morphology

High‐resolution transmission electron microscopy study of 1.5 nm ultrathin tunnel oxides of metal‐nitride‐oxide‐silicon nonvolatile memory devices

Yoshiaki Kamigaki, Shin‐ichi Minami, and Teruho Shimotsu

Appl. Phys. Lett. 53, 2629 (1988); http://dx.doi.org/10.1063/1.100539 (3 pages) | Cited 1 time

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Metal‐nitride‐oxide‐silicon (MNOS) nonvolatile memory devices have an ultrathin tunnel oxide SiO2 layer and a signal‐charge‐stored nitride Si3N4 layer. Using high‐resolution transmission electron microscopy (TEM), the cross‐sectional structure of MNOS devices has been observed for the first time, including direct observation of tunnel SiO2. The following is revealed: (1) Tunnel SiO2 of 1.5 nm thickness is fabricated very uniformly on the surface of a Si substrate. (2) No mixing of tunnel SiO2 and Si3N4 is observed even though tunnel SiO2 is extremely thin. As a result, we can suggest that tunnel SiO2 in a MNOS device exhibits very stable morphology and stoichiometry characteristics.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.40.Gk Tunneling
85.30.De Semiconductor-device characterization, design, and modeling
68.55.-a Thin film structure and morphology

Blue shift of the absorption edge in AlGaInAs‐GaInAs superlattices: Proposal for an original electro‐optical modulator

J. Bleuse, P. Voisin, M. Allovon, and M. Quillec

Appl. Phys. Lett. 53, 2632 (1988); http://dx.doi.org/10.1063/1.100540 (3 pages) | Cited 68 times

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The modulation by an external electric field of the resonant tunneling coupling between adjacent wells in a thin layer superlattice results in a blue shift of the effective absorption edge. We present a study of the electroabsorption in Al0.24Ga0.24In0.52As‐Ga0.47 In0.53 As superlattices, which evidence directly this remarkable effect, and we discuss its application to the design of new electro‐optical modulators.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
42.79.Hp Optical processors, correlators, and modulators
73.40.Gk Tunneling

Defect‐related Si diffusion in GaAs on Si

A. Freundlich, A. Leycuras, J. C. Grenet, and C. Grattepain

Appl. Phys. Lett. 53, 2635 (1988); http://dx.doi.org/10.1063/1.100392 (3 pages) | Cited 25 times

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Preferential diffusion channels of silicon are evidenced in GaAs grown by metalorganic vapor phase epitaxy on Si(100). The density of these diffusion channels is found to be consistent with the measured dislocation density. In addition, combining scanning electron microscopy and x‐ray fluorescence it is shown that a large amount of Si emerges at the surface inside small 〈011〉 overgrowth oriented defects (≊1 μm) present at the GaAs/Si surface.
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66.30.J- Diffusion of impurities
68.35.Fx Diffusion; interface formation
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Dv Composition, segregation; defects and impurities

Buried GaInAs/InP layers grown on nonplanar substrates by one‐step low‐pressure metalorganic vapor phase epitaxy

Yvan D. Galeuchet, Peter Roentgen, and Volker Graf

Appl. Phys. Lett. 53, 2638 (1988); http://dx.doi.org/10.1063/1.100180 (3 pages) | Cited 22 times

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Growth of GaInAs/InP layers on nonplanar substrates by low‐pressure metalorganic vapor phase epitaxy has been investigated using InP substrates patterned with [011] and [011] oriented grooves and mesas. For a wide range of growth parameters we find that GaInAs does not grow on {111}A and {111}B surfaces whereas InP grows on all available crystal planes. This allows very narrow GaInAs layers to be embedded in InP within one growth step. We find that the growth rate on the (100) surface of a mesa increases for both materials when the mesa width is reduced below ∼2 μm. The results are explained with a growth model where crystal facet‐dependent surface catalyzed reactions dominate the growth on a microscopic scale. These lead to blocking of low growth rate planes for the adsorption of arriving species and to local redistribution of adsorbed molecules by surface diffusion.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Consequence of layer thickness fluctuations on superlattice miniband structures

R. A. Davies, M. J. Kelly, and T. M. Kerr

Appl. Phys. Lett. 53, 2641 (1988); http://dx.doi.org/10.1063/1.100181 (3 pages) | Cited 2 times

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The miniband structure of a perfect superlattice depends on the thicknesses and compositions of the constituent layers. We describe simple modeling of the consequences of fluctuations in the layer thickness. Experimental results from an asymmetric superlattice tunnel diode, where the presence of negative differential conductance reflects the existence of a miniband gap, are used to show how the sensitivity of the miniband structure to such fluctuations depends on the choice of layer thicknesses.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.40.Gk Tunneling

Indium oxide diffusion barriers for Al/Si metallizations

E. Kolawa, C. Garland, L. Tran, C. W. Nieh, J. M. Molarius, W. Flick, M‐A. Nicolet, and J. Wei

Appl. Phys. Lett. 53, 2644 (1988); http://dx.doi.org/10.1063/1.100541 (3 pages) | Cited 3 times

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Indium oxide (In2O3) films were prepared by reactive rf sputtering of an In target in O2/Ar plasma. We have investigated the application of these films as diffusion barriers in 〈Si〉/In2O3/Al and 〈Si〉/TiSi2.3/In2O3/Al metallizations. Scanning transmission electron microscopy together with energy dispersive analysis of x ray of cross‐sectional Si/In2O3/Al specimens, and electrical measurements on shallow n+‐p junction diodes were used to evaluate the diffusion barrier capability of In2O3 films. We find that 100‐nm‐thick In2O3 layers prevent the intermixing between Al and Si in 〈Si〉/In2O3/Al contacts up to 650 °C for 30 min, which makes this material one of the best thin‐film diffusion barriers on record between Al and Si. (The Si‐Al eutectic temperature is 577 °C, Al melts at 660 °C.) When a contacting layer of titanium silicide is incorporated to form a 〈Si〉/TiSi2.3/In2O3/Al metallization structure, the thermal stability of the contact drops to 600 °C for 30 min heat treatment.
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73.40.Ns Metal-nonmetal contacts
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Cd Deposition by sputtering
68.35.Fx Diffusion; interface formation

Interface growth with atoms and preformed clusters: Morphology and Schottky barrier variations for Au/InP(110)

C. M. Aldao, I. M. Vitomirov, G. D. Waddill, and J. H. Weaver

Appl. Phys. Lett. 53, 2647 (1988); http://dx.doi.org/10.1063/1.100182 (3 pages) | Cited 6 times

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With synchrotron radiation photoemission, we contrast the morphology and the Schottky barrier obtained when Au atoms are condensed onto InP(110) at 300 and ∼60 K to what is obtained when preformed, metallic Au clusters are deposited. Atom by atom deposition at either temperature leads to substrate disruption and Fermi level pinning 0.75 eV below the conduction‐band minimum (CBM). Deposition of preformed Au clusters induces almost no disruption and a pinning position 0.42 eV below the CBM. Differences reflect the dependence upon the process, and therefore the energetics, of bringing dissimilar atoms in contact.
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68.35.Fx Diffusion; interface formation
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
79.60.Jv Interfaces; heterostructures; nanostructures

Mixing inhibition and crystalline defects in heavily Si‐doped AlAs/GaAs superlattices

P. Mei, S. A. Schwarz, T. Venkatesan, C. L. Schwartz, J. P. Harbison, L. Florez, N. D. Theodore, and C. B. Carter

Appl. Phys. Lett. 53, 2650 (1988); http://dx.doi.org/10.1063/1.100183 (3 pages) | Cited 13 times

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Superlattice mixing in heavily silicon‐doped AlAs/GaAs superlattices has been examined by secondary‐ion mass spectroscopy (SIMS) and transmission electron microscopy (TEM). Samples were grown by molecular beam epitaxy with Si concentrations of 1018 to 1020 cm−3 introduced during the growth process. Interdiffusion of Al was inhibited at a Si concentration of 1020 cm−3. Defect clusters and prismatic dislocation loops were found to be associated with Si concentrations of 1020 and 1019 cm−3, respectively. Si was observed by SIMS to segregate preferentially into the GaAs layers and TEM observation revealed defect formation in these same layers during the diffusion process, suggesting a strong correlation between Si segregation and defect formation. In the range of Si concentrations employed, the Al diffusion coefficient is found to vary as the third power of the estimated electron concentration, consistent with our previous results at lower concentrations. These results suggest that the diffusion inhibition at high Si concentrations may arise from the trapping of mobile Si species by defects with a consequent reduction of the carrier concentration.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.Fx Diffusion; interface formation
66.30.J- Diffusion of impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
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