Jump to Content
View Cart
LOG IN or SELECT A PURCHASE OPTION:
Appl. Phys. Lett. 53, 2644 (1988); doi:10.1063/1.100541 (3 pages)
Indium oxide diffusion barriers for Al/Si metallizations
(Received 25 August 1988; accepted 16 October 1988)
Alerts
Alert Me When Cited
Alert Me When Corrected
Tools
Download Citation
Add to MyScitation
Permissions / Reprints
Blog This Article
Print-Friendly
Research Toolkit
Share
Email Abstract
Connotea
CiteULike
del.icio.us
BibSonomy
Tweet this Article
Add to FacebookIndium oxide (In2O3) films were prepared by reactive rf sputtering of an In target in O2/Ar plasma. We have investigated the application of these films as diffusion barriers in 〈Si〉/In2O3/Al and 〈Si〉/TiSi2.3/In2O3/Al metallizations. Scanning transmission electron microscopy together with energy dispersive analysis of x ray of cross‐sectional Si/In2O3/Al specimens, and electrical measurements on shallow n+‐p junction diodes were used to evaluate the diffusion barrier capability of In2O3 films. We find that 100‐nm‐thick In2O3 layers prevent the intermixing between Al and Si in 〈Si〉/In2O3/Al contacts up to 650 °C for 30 min, which makes this material one of the best thin‐film diffusion barriers on record between Al and Si. (The Si‐Al eutectic temperature is 577 °C, Al melts at 660 °C.) When a contacting layer of titanium silicide is incorporated to form a 〈Si〉/TiSi2.3/In2O3/Al metallization structure, the thermal stability of the contact drops to 600 °C for 30 min heat treatment.
RELATED DATABASES
To view database links for this article,
you need to log in.
KEYWORDS and PACS
ARTICLE DATA
PUBLICATION DATA
For access to fully linked references, you need to log in.
-
M.-A. Nicolet, Thin Solid Films 54, 415 (1978APPLAB000050000026001879000001).
For access to citing articles, you need to log in.
This Publication
Scitation
SPIN
Google Scholar
PubMed