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Applied Physics Letters / Volume 53 / Issue 26

Appl. Phys. Lett. 53, 2647 (1988); http://dx.doi.org/10.1063/1.100182 (3 pages)

Interface growth with atoms and preformed clusters: Morphology and Schottky barrier variations for Au/InP(110)

C. M. Aldao, I. M. Vitomirov, G. D. Waddill, and J. H. Weaver

Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455

(Received 15 August 1988; accepted 14 October 1988)

With synchrotron radiation photoemission, we contrast the morphology and the Schottky barrier obtained when Au atoms are condensed onto InP(110) at 300 and ∼60 K to what is obtained when preformed, metallic Au clusters are deposited. Atom by atom deposition at either temperature leads to substrate disruption and Fermi level pinning 0.75 eV below the conduction‐band minimum (CBM). Deposition of preformed Au clusters induces almost no disruption and a pinning position 0.42 eV below the CBM. Differences reflect the dependence upon the process, and therefore the energetics, of bringing dissimilar atoms in contact.

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KEYWORDS and PACS

Keywords

INTERFACE STRUCTURE, MORPHOLOGY, GOLD, INDIUM PHOSPHIDES, SCHOTTKY BARRIER DIODES, SOLID CLUSTERS, SYNCHROTRON RADIATION, FERMI LEVEL, FABRICATION, PHOTOEMISSION

PACS

  • 68.35.Fx

    Diffusion; interface formation

  • 73.30.+y

    Surface double layers, Schottky barriers, and work functions

  • 73.40.Ns

    Metal-nonmetal contacts

  • 79.60.Jv

    Interfaces; heterostructures; nanostructures

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.100182

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    S. Raaen and M. Strongin, Phys. Rev. B 32, 4289 (1985)
    T.-C. Chiang, G. Kaindl, and T. Mandel, Phys. Rev. B 33, 695 (1986).

    K. Stiles and A. Kahn, Phys. Rev. Lett. 60, 440 (1988).

    C. M. Aldao, I. M. Vitomirov, F. Xu, and J. H. Weaver, Phys. Rev. B 37, 6019 (1988).


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