APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

18 Jul 1988

Volume 53, Issue 3, pp. 167-254

Page 1 of 2 Pages Next Page | Jump to Page

Optical phase conjugation using general self‐pumped four‐wave mixing

Xiaochun Wang and Yimo Zhang

Appl. Phys. Lett. 53, 167 (1988); http://dx.doi.org/10.1063/1.100163 (2 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
We propose a general self‐pumped four‐wave mixing device in which the pump waves are derived from a single incident optical beam. In a single‐mode fiber, only the fundamental mode of the fiber can propagate. The output of a single‐mode fiber can provide pump waves of four‐wave mixing. We have demonstrated that the phase distortion is eliminated by using this device.
Show PACS
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.81.Dp Propagation, scattering, and losses; solitons
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Inhomogeneous gain saturation in a mode‐locked semiconductor laser

M. Serenyi, E. O. Göbel, and J. Kuhl

Appl. Phys. Lett. 53, 169 (1988); http://dx.doi.org/10.1063/1.100164 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
The saturation of the light‐dc prebias current characteristic of an actively mode‐locked GaAs/AlGaAs semiconductor laser with external resonator reveals a pronounced dependence on lasing wavelength and peak intensity of the mode‐locked pulses. The latter effect is attributed to inhomogeneous gain saturation.
Show PACS
42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission

Soliton coupler

D. R. Heatley, E. M. Wright, and G. I. Stegeman

Appl. Phys. Lett. 53, 172 (1988); http://dx.doi.org/10.1063/1.100165 (3 pages) | Cited 20 times

Full Text: | Download PDF

Show Abstract
We propose and examine the characteristics of a new device called a soliton coupler which exchanges energy between two adjacent waveguides by transfer of spatial solitons.
Show PACS
42.79.Gn Optical waveguides and couplers
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.50.Md Optical transient phenomena: quantum beats, photon echo, free-induction decay, dephasings and revivals, optical nutation, and self-induced transparency
42.65.Tg Optical solitons; nonlinear guided waves

Broadly tunable optical parametric oscillation in β‐BaB2O4

L. K. Cheng, W. R. Bosenberg, and C. L. Tang

Appl. Phys. Lett. 53, 175 (1988); http://dx.doi.org/10.1063/1.100582 (3 pages) | Cited 38 times

Full Text: | Download PDF

Show Abstract
We report the first successful operation of a β‐BaB2O4 optical parametric oscillator (OPO) tunable in the visible and the near infrared. The OPO was pumped at 354.7 nm and was tunable throughout 0.45–1.68 μm. A maximum total energy conversion efficiency of 9.4% was measured from the OPO containing a 10.5 × 10.5 mm2 × 11.5 mm long, 30° cut β‐BaB2O4 crystal grown in our laboratory. Using the optical parametric luminescence technique, we have measured the 354.7 nm and 266 nm pumped OPO tuning curves (type I and type II) in β‐BaB2O4 throughout the ∼0.3–3.3 μm range. The implication of these results on the validity of the published Sellmeier equations is discussed.
Show PACS
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
07.60.-j Optical instruments and equipment
42.79.-e Optical elements, devices, and systems
78.20.-e Optical properties of bulk materials and thin films
78.60.-b Other luminescence and radiative recombination

Distributed feedback lasers with multiple phase‐shift regions

G. P. Agrawal, J. E. Geusic, and P. J. Anthony

Appl. Phys. Lett. 53, 178 (1988); http://dx.doi.org/10.1063/1.100166 (2 pages) | Cited 14 times

Full Text: | Download PDF

Show Abstract
Phase‐shifted distributed‐feedback (PSDFB) lasers with multiple phase‐shift regions are proposed to reduce the effect of spatial hole burning in conventional PSDFB lasers where a single phase shift leads to a highly nonuniform axial distribution of the mode intensity. We analyze multiple phase‐shift PSDFB lasers by solving numerically the coupled‐wave equations. Our results show that the use of even two phase‐shift regions can substantially reduce the axial inhomogeneity of the mode intensity. Although the gain margin is generally reduced by the use of multiple phase shifts, it is still large enough for most practical purposes if the phase shifts are suitably optimized.
Show PACS
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Carrier‐activated light modulation

N. F. Johnson, H. Ehrenreich, and R. V. Jones

Appl. Phys. Lett. 53, 180 (1988); http://dx.doi.org/10.1063/1.100167 (2 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
A variety of superlattices is predicted to exhibit high‐speed carrier‐activated light modulation. The proposal is based on the large, tunable, and very narrow absorption peak for transitions between the two lowest conduction subbands. The theory, which is demonstrated to be predictive, also suggests correspondingly large variations of the refractive index.
Show PACS
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Hp Optical processors, correlators, and modulators
78.66.-w Optical properties of specific thin films
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures

Physical mechanism of triggering in trigatron spark gaps

F. E. Peterkin and P. F. Williams

Appl. Phys. Lett. 53, 182 (1988); http://dx.doi.org/10.1063/1.100168 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
Since the first trigatron spark gap was described by J. D. Craggs, M. E. Haine, and J. M. Meek [J. Inst. Electr. Eng. 93A, 963 (1946)], there has been controversy about the physical mechanism responsible for triggering the devices. In this letter we present experimental evidence that directly shows the sequence of physical events responsible for triggering in the gap we studied, and we present a model for trigatron triggering based on this information. We believe this model to be general and discuss it in light of existing literature. We briefly discuss the implications of the model for the engineering design of trigatron gaps.
Show PACS
52.75.Kq Plasma switches (e.g., spark gaps)
52.80.Mg Arcs; sparks; lightning; atmospheric electricity
52.80.Hc Glow; corona

Recrystallization of AlNx (x<1) thin films induced by N implantation

K. Kobayashi, S. Namba, T. Fujihana, T. Kobayashi, Y. Dai, and M. Iwaki

Appl. Phys. Lett. 53, 185 (1988); http://dx.doi.org/10.1063/1.100581 (2 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
The effect of ion implantation on recrystallization of films has been investigated using AlNx (x<1) films as targets. The 750 Å AlNx (x<1) films were deposited on Si(111), glassy carbon, and commercial glass by an activated reactive evaporation method in a nitrogen atmosphere. The 80 keV N+ implantations were carried out near room temperature with doses ranging from 5×1016 to 5×1017 N+ions/cm2 at 1×10−6 Torr. The x‐ray diffraction patterns revealed that N implantation enhances a (002) orientation of AlN, growth of which depends on doses. The optical transmittance of the AlNx films is also improved by N implantation, depending on doses. N implantation into AlNx (x<1) even without any annealing is effective for recrystallization of the films, which leads to improvement of optical properties.
Show PACS
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
61.80.Jh Ion radiation effects
78.66.-w Optical properties of specific thin films

Diamond‐like carbon films prepared with a laser ion source

S. S. Wagal, E. M. Juengerman, and C. B. Collins

Appl. Phys. Lett. 53, 187 (1988); http://dx.doi.org/10.1063/1.100169 (2 pages) | Cited 61 times

Full Text: | Download PDF

Show Abstract
Diamond‐like carbon films have been deposited onto clean, unseeded substrates using a hybrid ion beam technique. In this method the ion fluences available for acceleration were particularly enhanced by the use of laser ablation plumes ejected from highly purified graphite targets. The combination of levels of purity characteristic of ultrahigh vacuum environments, large ratios of ion to neutral concentrations, and high fluences showed considerable merit for the growth of large‐area (10 cm2 ) films of optical quality and uniformity at deposition rates approaching 20 μm/h.
Show PACS
81.15.Jj Ion and electron beam-assisted deposition; ion plating
78.66.-w Optical properties of specific thin films
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
77.55.-g Dielectric thin films

Fast diffusion component of ion‐implanted arsenic in thermally grown silicon dioxide

S.‐Tong Lee and P. Fellinger

Appl. Phys. Lett. 53, 189 (1988); http://dx.doi.org/10.1063/1.100583 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
A fast diffusing species of ion‐implanted arsenic has been observed in silicon dioxide annealed in a nitrogen annealing ambient. Below 1020 cm−3 concentration this arsenic diffuses 20× faster at 1100 °C than the slow arsenic found in oxidizing ambient. The effective activation energy of diffusion of this fast arsenic is 0.71 eV, in sharp contrast to 4.3 and 4.0 eV for the slow arsenic in O2 and O2 /H2 O, respectively. The fast species is believed to be arsenic occupying either the oxygen site or interstitial site in the SiO2 network.
Show PACS
61.72.up Other materials
66.30.J- Diffusion of impurities

Auger electron spectroscopy for quantitative analysis

A. Many, Y. Goldstein, S. Z. Weisz, and O. Resto

Appl. Phys. Lett. 53, 192 (1988); http://dx.doi.org/10.1063/1.100170 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
A simple mathematical analysis shows that unless the ratio of the instrumental resolution width to the natural Auger linewidth is less than about 0.3, the measured line intensities do not represent accurately the atomic concentrations. To overcome this difficulty, a universal curve is presented whereby the experimentally measured line intensities can be corrected so as to represent quite accurately the relative atomic concentrations in one’s sample. Unfortunately, however, the available sensitivity data required for quantification were not always measured with sufficient instrumental resolution. It is our contention that there is a need for new sensitivity measurements in which the required resolution is ensured.
Show PACS
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Field‐effect mobility of poly(3‐hexylthiophene)

A. Assadi, C. Svensson, M. Willander, and O. Inganäs

Appl. Phys. Lett. 53, 195 (1988); http://dx.doi.org/10.1063/1.100171 (3 pages) | Cited 186 times

Full Text: | Download PDF

Show Abstract
A field‐effect transistor structure is used to study the transport properties of the soluble conductive polymer, poly(3‐hexylthiophene). We have measured conductance, mobility, and carrier concentration in undoped polymer thin films. The field‐effect mobility was found to be 10−5–10−4 cm2/V s at room temperature. The mobility decreases with increased temperature. The change is only partly reversible. Possible transport models are discussed.
Show PACS
73.50.Dn Low-field transport and mobility; piezoresistance
85.30.Tv Field effect devices
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Intrinsic stress in narrow silicon metal‐oxide‐semiconductor field‐effect transistors: Magnetotransport measurements

N. Paquin, M. Pepper, A. Gundlach, and A. Ruthven

Appl. Phys. Lett. 53, 198 (1988); http://dx.doi.org/10.1063/1.100146 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
Measurements of the Hall (ρxy) and transverse (ρxx) resistivities in narrow polycrystalline silicon‐gated Si(100) field‐effect transistors have been obtained. The measurements were carried out both with and without externally applied uniaxial stress. Analysis of the results suggests the presence of large compressive intrinsic edge stresses. A model based on device fabrication is developed to explain the presence of these edge stresses.
Show PACS
85.30.Tv Field effect devices
72.20.My Galvanomagnetic and other magnetotransport effects
72.20.Fr Low-field transport and mobility; piezoresistance
62.20.-x Mechanical properties of solids

Elastic scattering centers in resonant tunneling diodes

E. Wolak, K. L. Lear, P. M. Pitner, E. S. Hellman, B. G. Park, T. Weil, J. S. Harris, and D. Thomas

Appl. Phys. Lett. 53, 201 (1988); http://dx.doi.org/10.1063/1.100147 (3 pages) | Cited 30 times

Full Text: | Download PDF

Show Abstract
The effect of impurities placed in the wells of double‐barrier resonant tunneling diodes on the current‐voltage characteristics was experimentally determined. Four different double‐barrier structures were grown by molecular beam epitaxy with n‐type, p‐type, undoped, and highly compensated doping in the center of the well. Resonant tunneling devices of various sizes were fabricated, and measured at 77 K. Systematic shifts in the peak position and peak to valley ratios were observed for the different dopant profiles. The shifts in peak position are correctly predicted by a ballistic model which includes the effects of band bending due to ionized impurities in the well. The doped devices showed a systematic decrease in the peak to valley ratio which is not predicted by the ballistic model. By scaling our results, it is apparent that in most cases unintentional background impurities are not sufficient to significantly degrade the current‐voltage characteristics of resonant tunneling diodes.
Show PACS
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling

Resonant tunneling through a Si/GexSi1−x/Si heterostructure on a GeSi buffer layer

S. S. Rhee, J. S. Park, R. P. G. Karunasiri, Q. Ye, and K. L. Wang

Appl. Phys. Lett. 53, 204 (1988); http://dx.doi.org/10.1063/1.100148 (3 pages) | Cited 40 times

Full Text: | Download PDF

Show Abstract
Resonant tunneling of holes through an unstrained GeSi well between two strained Si barriers on a relaxed GeSi buffer layer has been observed for the first time. The peak‐to‐valley ratios of 2.1/1 at 4.2 K and 1.6/1 at 77 K in current‐voltage characteristics were attained for light holes. Resonant tunneling from heavy‐hole states was also observed at room temperature, as well as 77 and 4.2 K by conductance measurement. The positions of the resonance peaks are in good agreement with the light‐ and heavy‐hole bound states in the quantum well.
Show PACS
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Parametric study of AlAs/GaAs superlattice double‐barrier diodes

M. J. Paulus, C. A. Bozada, C. I. Huang, S. C. Dudley, K. R. Evans, C. E. Stutz, R. L. Jones, and M. E. Cheney

Appl. Phys. Lett. 53, 207 (1988); http://dx.doi.org/10.1063/1.100132 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Quantum well diodes with barriers formed by thin, short‐period binary AlAs/GaAs superlattices were fabricated and found to have very high peak‐to‐valley current ratios. The effects of varying the AlAs and GaAs layers in the barriers are studied. The peak current density is found to decrease by orders of magnitude for monolayer increases in the AlAs layer thicknesses. Tunneling current peaks due to both resonance levels in the quantum well and resonance levels in the superlattice barriers are observed.
Show PACS
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
85.30.Hi Surface barrier, boundary, and point contact devices

Lack of temperature dependence of Fermi level pinning at the Cu/InP(110) interface: A comparison with Cu/GaAs and other systems

Renyu Cao, K. Miyano, T. Kendelewicz, I. Lindau, and W. E. Spicer

Appl. Phys. Lett. 53, 210 (1988); http://dx.doi.org/10.1063/1.100133 (3 pages) | Cited 14 times

Full Text: | Download PDF

Show Abstract
Cu/GaAs(110) and Cu/InP(110) interfaces prepared at room temperature and 80 K low temperature have been studied using photoelectron spectroscopy. The temperature effect on the interface reactivity and the Fermi level pinning is quite different at these two interfaces despite the fact that the Cu overlayer morphology changes in the same way. For Cu/GaAs, the interfacial chemical reaction is suppressed at low temperature and the Fermi level pinning pattern varies significantly. In contrast, little change in the reaction for InP at low temperature, and consequently lack of temperature dependence of the Fermi level pinning is observed. The results provide insight into the Schottky barrier formation.
Show PACS
73.20.Hb Impurity and defect levels; energy states of adsorbed species
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts

Resonant photoluminescence excitation in GaAs grown directly on Si

S. Zemon, C. Jagannath, S. K. Shastry, W. J. Miniscalco, and G. Lambert

Appl. Phys. Lett. 53, 213 (1988); http://dx.doi.org/10.1063/1.100134 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
We describe new results observed during resonant excitation in the excitonic region of GaAs grown directly on Si by organometallic vapor phase epitaxy. Two resolved features were found in the light‐hole photoluminescence (PL) region, one identified with a free‐exciton process and the other with donor‐related transitions. Inhomogeneous line broadening was observed for the excitonic PL lines and related to stress fluctuations. Features which track the laser excitation line were observed and identified with a process in which a donor is excited from the n=1 ground state to an n=2 state.
Show PACS
78.55.Cr III-V semiconductors
72.80.Ey III-V and II-VI semiconductors
71.55.Eq III-V semiconductors
71.35.-y Excitons and related phenomena

Photoluminescence and the band structure of InAsSb strained‐layer superlattices

S. R. Kurtz, G. C. Osbourn, R. M. Biefeld, and S. R. Lee

Appl. Phys. Lett. 53, 216 (1988); http://dx.doi.org/10.1063/1.100135 (3 pages) | Cited 34 times

Full Text: | Download PDF

Show Abstract
Infrared photoluminescence measurements were performed on InAs0.13Sb0.87 /InSb strained‐layer superlattices. In thick layered structures we observed very low energy transitions proving that a type II superlattice occurs in the InAsSb system. Band structures were calculated based on estimates of the band offsets and strain shifts obtained from the photoluminescence data.
Show PACS
78.55.Cr III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.60.Gz Photodetectors (including infrared and CCD detectors)
78.30.Fs III-V and II-VI semiconductors

Negative transconductance via gating of the quantum well subbands in a resonant tunneling transistor

Fabio Beltram, Federico Capasso, Serge Luryi, Sung‐Nee G. Chu, Alfred Y. Cho, and Deborah L. Sivco

Appl. Phys. Lett. 53, 219 (1988); http://dx.doi.org/10.1063/1.100136 (3 pages) | Cited 19 times

Full Text: | Download PDF

Show Abstract
Operation of a new resonant tunneling transistor is reported in the AlGaAs/GaAs material system. The device contains an undoped quantum well collector separated from a heavily doped emitter by a thin tunnel barrier. The collector is gated and the gate field controls resonant tunneling characteristics ‘‘from behind’’ via a combination of the generalized Stark effect and the quantum capacitance effect. The common‐collector characteristics show negative differential resistance at a fixed gate bias and negative transconductance at a fixed emitter bias. Excellent agreement is found between the measured and calculated shifts of the peaks of the current‐voltage characteristics.
Show PACS
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling

Minority‐carrier properties of GaAs on silicon

R. K. Ahrenkiel, M. M. Al‐Jassim, D. J. Dunlavy, K. M. Jones, S. M. Vernon, S. P. Tobin, and V. E. Haven

Appl. Phys. Lett. 53, 222 (1988); http://dx.doi.org/10.1063/1.100137 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
The minority‐carrier lifetimes of the heteroepitaxial system of GaAs on Si are limited by recombination at mismatch dislocations. Here we show that increasing the thickness of the buffer layer, with an additional annealing step, reduces the dislocation density by about an order of magnitude. At the same time, the minority‐carrier lifetime in these double heterostructures increases more than an order of magnitude.
Show PACS
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Dv Composition, segregation; defects and impurities

Warpage of GaAs‐on‐Si wafers and its reduction by selective growth of GaAs through a silicon shadow mask by molecular beam epitaxy

N. Chand, J. P. van der Ziel, J. S. Weiner, A. M. Sergent, A. Y. Cho, and K. A. Grim

Appl. Phys. Lett. 53, 225 (1988); http://dx.doi.org/10.1063/1.100138 (3 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
The warpage of GaAs‐on‐Si wafers, caused by the different thermal expansion coefficients of GaAs and Si, has been studied as a function of the GaAs thickness on 3‐in.‐diam Si wafers. The warpage increases from 7 to 52 μm as the GaAs layer thickness increases from 1.2 to 4.2 μm. Under vacuum clamping conditions the GaAs/Si wafers can be forced to the original flatness. By growing GaAs selectively through a Si shadow mask as islands of 1 mm×1 mm size with a periodicity of 2 mm in a 5 cm×5 cm central area of the wafer, the warpage is reduced considerably. Spatially resolved cathodoluminescence (CL) spectra indicated that the tensile strain is reduced significantly within 10 μm from the edge of the growth. Near the edge, the CL intensity is also increased indicating a reduction in nonradiative recombination at defects. The use of the Si shadow mask to obtain patterned growth is relatively simple, requiring no processing step before or after the growth, and has a great potential in the integration of GaAs and Si circuits or devices.
Show PACS
68.55.-a Thin film structure and morphology
81.40.Lm Deformation, plasticity, and creep
78.60.Hk Cathodoluminescence, ionoluminescence
85.40.Hp Lithography, masks and pattern transfer

Low‐temperature extended defect removal following low‐energy ion implantation

E. Myers, M. C. Ozturk, J. J. Wortman, and J. J. Hren

Appl. Phys. Lett. 53, 228 (1988); http://dx.doi.org/10.1063/1.100584 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
In this study, residual defects resulting from Ge+ preamorphization of Si substrates prior to low‐energy (6 keV) BF+2 implantation are compared using cross‐section transmission electron microscopy. Complete defect annihilation including end of range damage dislocation loops has been accomplished for samples preamorphized by 27 keV Ge+ implants at rapid thermal anneals as low as 950 °C. Resulting junction depths are less than 70 nm, at a background concentration of 1×1017 cm−3. Low‐energy BF+2 implantation was also found to prevent nucleation of the F+‐induced surface damage that appears following annealing of higher energy BF+2 implants into crystalline and preamorphized substrates.
Show PACS
61.80.Jh Ion radiation effects
61.72.uf Ge and Si
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Tunneling lifetime broadening of the quantum well intersubband photoconductivity spectrum

B. F. Levine, C. G. Bethea, K. K. Choi, J. Walker, and R. J. Malik

Appl. Phys. Lett. 53, 231 (1988); http://dx.doi.org/10.1063/1.100391 (3 pages) | Cited 61 times

Full Text: | Download PDF

Show Abstract
We have measured, for the first time, the continuous infrared (λ∼10 μm) photoconductivity spectrum, for an intersubband absorption photoexcited tunneling quantum well detector. The line shape is broadened and asymmetrical with respect to the zero‐bias Lorentzian absorption spectrum. We show that this is a result of the uncertainty principle lifetime broadening due to the rapid tunneling escape of the photoexcited electrons.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.40.Gk Tunneling
73.50.Pz Photoconduction and photovoltaic effects
73.61.Ey III-V semiconductors

Deposition of superconducting Y‐Ba‐Cu‐O films at 400 °C without post‐annealing

S. Witanachchi, H. S. Kwok, X. W. Wang, and D. T. Shaw

Appl. Phys. Lett. 53, 234 (1988); http://dx.doi.org/10.1063/1.100585 (3 pages) | Cited 139 times

Full Text: | Download PDF

Show Abstract
Superconducting thin films of Y1Ba2Cu3O7−x were fabricated using the process of plasma‐assisted laser deposition. The substrate temperature was as low as 400 °C and high‐temperature post‐annealing in an O2 atmosphere was not necessary. The as‐deposited films have a Tc of ∼85 K, and are oriented mostly with the c axis perpendicular to the substrate surface. The measured Jc at 80 K was 105 A/cm2.
Show PACS
74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
81.15.Rs Spray coating techniques
68.55.-a Thin film structure and morphology
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close