Superconducting thin films (500–1000 Å in thickness) of A15 V3Si have been grown on (111)Si substrates through molecular beam epitaxial techniques. V and Si are codeposited in a feedback‐stabilized, 3:1 flux ratio from dual e‐beam evaporators onto clean, heated Si substrates in an ultrahigh vacuum chamber. For the first time, the superconducting A15 V3Si phase is metastably fabricated directly on a crystalline Si substrate without the formation of thermodynamically favored Si‐rich VxSiy phases. Our films exhibit superconductivity only within a narrow range of intermediate growth temperatures (centered near 400 °C), with an optimum Tc of 12.5 K. X‐ray diffraction shows the superconducting films to be polycrystalline A15 V3Si. For slightly higher growth temperatures (≊530 °C), Auger profile, x‐ray, and transmission electron microscopy measurements indicate the appearance of an intermediate layer of roughly 1:1 V:Si composition. Our observations demonstrate that a growth temperature near 400 °C results in successful nucleation of the superconducting A15 phase while minimizing solid phase reaction with the substrate during V3Si growth.