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15 Aug 1988

Volume 53, Issue 7, pp. 541-627

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Visualization of electrical domains in semi‐insulating GaAs:Cr and potential use for variable grating mode operation

H. Rajbenbach, J. M. Verdiell, and J. P. Huignard

Appl. Phys. Lett. 53, 541 (1988); http://dx.doi.org/10.1063/1.99870 (3 pages) | Cited 15 times

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The results of an experimental optical technique for imaging the electrical domain repartition in semi‐insulating GaAs:Cr are reported. The technique is based on the use of the crystal as the active component of a transverse electro‐optic two‐dimensional light modulator. Under dc applied voltage, the electrical domains are traveling from the cathode to the anode at a velocity that increases with the applied voltage and with the incident illumination (v≂10–100 mm/s). Results for ac applied voltages are also presented. In particular, the observation of stationary and periodically distributed high‐field domains in GaAs:Cr is reported for sawtooth applied voltages (1 kV, 50–250 Hz). These high‐field domains induce a phase structure whose period is shown to be electrically controllable. This is the first reported demonstration of the possibility of a variable grating mode operation in semiconductors.
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71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds
42.79.Hp Optical processors, correlators, and modulators
78.20.Jq Electro-optical effects
42.65.-k Nonlinear optics

Ion‐implanted planar waveguides in barium sodium niobate

L. Zhang, P. J. Chandler, and P. D. Townsend

Appl. Phys. Lett. 53, 544 (1988); http://dx.doi.org/10.1063/1.100629 (3 pages) | Cited 8 times

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Planar optical waveguides have been formed in Y‐cut barium sodium niobate by He+ ion implantation.Refractive index profiles have been determined for n0 and ne using our dark‐mode‐spacing reflectivity calculation at 0.633 and 0.488 μm. The profiles are similar to those reported for LiNbO3 with optical barriers having −Δn∼5.5% for n0 and ∼3.5% for ne (at a dose of 3×1016 cm−2), and with an anomalous index increase in the guiding region for ne. The sharp modes suggest losses of a few dB/cm, and guide stability up to 500 °C has been determined.
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42.79.Gn Optical waveguides and couplers
61.72.up Other materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.82.-m Integrated optics

Fast photolytic laser writing of gold lines on a prenucleated substrate

K. W. Beeson and N. S. Clements

Appl. Phys. Lett. 53, 547 (1988); http://dx.doi.org/10.1063/1.100398 (3 pages) | Cited 6 times

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Laser written gold lines with resistivities as low as 4.5 μΩ cm and writing speeds up to 2.5 mm/s have been achieved by photolytic decomposition of gold metallopolymer thin films on alumina substrates prenucleated with a very thin (∼20 Å) nonconducting layer of sputtered gold. Laser writing is done at 257 nm with a frequency‐doubled Ar+ laser and is followed by a subsequent annealing step at 250 °C for 30–200 min to produce conducting lines.
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81.05.Bx Metals, semimetals, and alloys
85.40.Hp Lithography, masks and pattern transfer
68.35.B- Structure of clean surfaces (and surface reconstruction)
73.61.At Metal and metallic alloys

Efficient AlGaAs channeled‐substrate‐planar distributed feedback laser

B. Goldstein, G. Evans, J. Connolly, N. Dinkel, and J. Kirk

Appl. Phys. Lett. 53, 550 (1988); http://dx.doi.org/10.1063/1.99853 (3 pages) | Cited 1 time

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A wavelength‐locked, AlGaAs channeled‐substrate‐planar distributed feedback laser has been made that operates to 40 mW pulsed. The Bragg grating is situated at the shoulders of the layers of AlGaAs and GaAs. Overall power efficiencies of 15% have been measured at 40 mW of output power.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Low‐loss chalcogenide glass fiber with core‐cladding structure

J. Nishii, T. Yamashita, and T. Yamagishi

Appl. Phys. Lett. 53, 553 (1988); http://dx.doi.org/10.1063/1.99854 (2 pages) | Cited 2 times

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Ge‐As‐Se‐Te glass fiber having the core‐cladding structure was prepared using a rod‐in‐tube method. Fibers more than 30 m in length were drawn from a crucible with a nozzle and coated with an UV curable polymer. The diameters of the core and clad were 300 and 420 μm, respectively. The transmission loss spectra of the fibers were measured by the cut‐back method and 0.6 dB/m was attained at the wavelength of 8.5 μm.
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42.81.Bm Fabrication, cladding, and splicing
42.81.Dp Propagation, scattering, and losses; solitons

High‐power, high‐brightness, phase‐locked broad‐stripe diode lasers

C. Lindstrom, A. Josefsson, G. Franklin, M. Milton, and C. Nyberg

Appl. Phys. Lett. 53, 555 (1988); http://dx.doi.org/10.1063/1.100397 (2 pages) | Cited 1 time

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A novel superlinear graded index separate confinement laser diode structure is proposed. Single stripe diode lasers with 210 μm emitting aperture generate 3.2 W cw, and 6.3 W quasi‐cw of light‐output power in a phase‐locked operation. The catastrophic optical density (30 W/mm) obtained for these lasers is better than that reported for devices with nonabsorbing mirrors.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.By Design of specific laser systems

Direct test of a model of efficient second‐harmonic generation in glass optical fibers

Victor Mizrahi, U. Österberg, C. Krautschik, G. I. Stegeman, J. E. Sipe, and T. F. Morse

Appl. Phys. Lett. 53, 557 (1988); http://dx.doi.org/10.1063/1.99855 (2 pages) | Cited 8 times

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We report the first direct test of the only viable model of efficient second‐harmonic generation in glass optical fibers put forth to date. We conclude that modifications of the model are necessary.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Ce Glasses, quartz
42.81.Dp Propagation, scattering, and losses; solitons
78.20.-e Optical properties of bulk materials and thin films

Observation of a resonant enhancement of microwave radiation from a gas‐filled backward wave oscillator

K. Minami, W. R. Lou, W. W. Destler, R. A. Kehs, V. L. Granatstein, and Y. Carmel

Appl. Phys. Lett. 53, 559 (1988); http://dx.doi.org/10.1063/1.99856 (3 pages) | Cited 24 times

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High‐power microwave radiation at 8 GHz from a gas‐filled backward wave oscillator driven by an intense relativistic electron beam has been measured. It has been observed that an order of magnitude resonant increase in microwave output power occurs at a particular pressure of the background gas. This resonance has also been observed to be strongly dependent on the value of applied axial magnetic field. Possible explanations for the observed results are discussed.
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84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
52.59.Px Hard X-ray sources
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables

Electrical properties of InAs epilayers grown by molecular beam epitaxy on Si substrates

Ş. Kalem, J. Chyi, C. W. Litton, H. Morkoç, S. C. Kan, and A. Yariv

Appl. Phys. Lett. 53, 562 (1988); http://dx.doi.org/10.1063/1.99857 (3 pages) | Cited 16 times

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InAs epitaxial films have been grown by molecular beam epitaxy on high‐resistivity Si (20 Ω cm) substrates for the first time, and transport properties were investigated by Hall effect measurements down to 10 K. The electron mobilities peak at 75 K with a value of 4.5×104 cm2/(V s) in 6.7‐μm‐thick (n=2.6×1015 cm−3 ) unintentionally doped layers. It is shown that the temperature dependence of the Hall mobility can be explained by a combined ionized impurity‐polar optical phonon scattering model in the thin InAs layers. Despite the existence of a large lattice mismatch, the results are indicative of a high quality material.
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73.61.Ey III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.50.Dn Low-field transport and mobility; piezoresistance

Enhancement of effective electron mobility in the channel of InP metal‐insulator‐semiconductor field‐effect transistors

Y. Iwase, F. Arai, and T. Sugano

Appl. Phys. Lett. 53, 565 (1988); http://dx.doi.org/10.1063/1.99858 (3 pages) | Cited 2 times

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Effective mobility of electrons in the channel of accumulation type InP metal‐insulator‐semiconductor field‐effect transistors has been enhanced by means of reducing the iron concentration in the InP substrate and by lowering the deposition temperature of the gate insulator. The highest effective electron mobility, which has been obtained in this work, was about 4000 cm2/V s at room temperature. This was achieved by using InP wafers doped with Fe, whose concentration was 1.6×1016 cm−3, as the substrate and by depositing phosphorus nitride film as the gate insulator at 350  °C. The results are attributed to a less density of scattering centers, both in the InP substrates due to the smaller concentration of Fe and at the interface between the phosphorus nitride film and the InP substrate due to the smaller density of defects, induced during the deposition process at a lower temperature.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Fr Low-field transport and mobility; piezoresistance
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

High quality ultrathin InAs/GaAs quantum wells grown by standard and low‐temperature modulated‐fluxes molecular beam epitaxy

J. M. Gerard and J. Y. Marzin

Appl. Phys. Lett. 53, 568 (1988); http://dx.doi.org/10.1063/1.99859 (3 pages) | Cited 48 times

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We report on the optical study of ultrathin (1–3 monolayers) InAs quantum wells in GaAs. The samples have been grown either by standard molecular beam epitaxy (MBE) or low‐temperature (350 °C) modulated‐fluxes MBE. The latter technique enlarges the range of pseudomorphic deposition of strained InAs layers on GaAs. Both types of samples display sharp (down to 6 meV spectral width) and intense low‐temperature excitonic photoluminescence, and a high in‐plane homogeneity. Higher energy optical transitions have been observed in both absorption and photoluminescence excitation experiments, performed on multiple quantum well structures.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Cr III-V semiconductors

Intersubband absorption in a modulation‐doped Ga0.47In0.53As/Al0.48In0.52As multiple quantum well structure

H. Lobentanzer, W. König, W. Stolz, K. Ploog, T. Elsaesser, and R. J. Bäuerle

Appl. Phys. Lett. 53, 571 (1988); http://dx.doi.org/10.1063/1.99860 (3 pages) | Cited 12 times

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We observe strong intersubband absorption at a wavelength of 8.4 μm in an n‐type modulation‐doped Ga0.47In0.53As/Al0.48In0.52As multiple quantum well structure with a well thickness of 8.2 nm. An oscillator strength of the corresponding dipole transition of 21.0 is measured. The dependence of the intersubband absorption on the polarization of the incident light and on lattice temperature is investigated in detail.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors

Liquid phase epitaxial growth of Fe‐doped semi‐insulating InGaAsP lattice matched to InP over the entire composition range

M. Kondo, M. Sugawara, T. Tanahashi, S. Isozumi, and K. Nakajima

Appl. Phys. Lett. 53, 574 (1988); http://dx.doi.org/10.1063/1.99861 (3 pages) | Cited 3 times

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Fe‐doped semi‐insulating In1−x Gax Asy P1−y (0≤y≤1, y=2.2x) epitaxial layers lattice matched to InP with nearly intrinsic carrier concentrations have been successfully grown over the entire composition range by liquid phase epitaxy. Maximum resistivities as high as 8×107 Ω cm for InP, 2×105 Ω cm for InGaAsP (y=0.57), and 2×103 Ω cm for InGaAs (y=1) have been achieved. The critical growth temperature necessary to obtain semi‐insulating layers significantly decreased as the composition was varied from y=0 to y=1. The Fe doping characteristics are well defined by the composition dependence of the Fe distribution coefficient.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
68.55.Nq Composition and phase identification
73.61.Ey III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Modulated optical reflectance: A method for characterizing polycrystalline silicon

P. Alpern, R. Kakoschke, M. Schöninger, and S. Wurm

Appl. Phys. Lett. 53, 577 (1988); http://dx.doi.org/10.1063/1.99862 (3 pages) | Cited 1 time

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We describe modulated optical reflectance experiments with polycrystalline silicon layers treated by rapid optical annealing. The layers were deposited on SiO2 or on crystalline Si. It turns out that the modulated optical reflectance signals are very sensitive to small variations of the grain size in the first case and to epitaxial realignment in the second one.
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78.66.-w Optical properties of specific thin films
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
81.40.Tv Optical and dielectric properties related to treatment conditions
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Electrical and photovoltaic properties of amorphous chalcogenide thin‐film p‐n junctions

Noboru Tohge, Kimio Kanda, and Tsutomu Minami

Appl. Phys. Lett. 53, 580 (1988); http://dx.doi.org/10.1063/1.99863 (3 pages) | Cited 3 times

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Amorphous chalcogenide thin‐film p‐n junctions have been formed between p‐type As2Se3 or Ge20Se80 and n‐type Ge20Bi15Se65. The rectifying behavior was observed only for the junctions which were formed by depositing the p‐type films on the annealed n‐type films. The forward currents in these junctions were found to be space‐charge‐limited, as in the previously formed p‐type film/n‐type bulk glass junctions. The photovoltaic properties of the thin‐film p‐n junctions have been improved, compared with the film/bulk glass junctions, due to the decrease in series resistance of the cells.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Pz Photoconduction and photovoltaic effects
73.40.Ei Rectification
73.61.Ga II-VI semiconductors

Electroreflectance study of ordered Ga0.5In0.5P alloys grown on GaAs by organometallic vapor phase epitaxy

T. Nishino, Y. Inoue, Y. Hamakawa, M. Kondow, and S. Minagawa

Appl. Phys. Lett. 53, 583 (1988); http://dx.doi.org/10.1063/1.99864 (3 pages) | Cited 38 times

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We have measured the electroreflectance spectra of ordered Ga0.5In0.5P alloys grown on GaAs by organometallic vapor phase epitaxy. As a result, it has been found that there exist anomalous structures in the region of the E0 and E1 band edges of this material. These anomalous structures are closely related to the recently reported ordered phase in this alloy, since these structures have never been observed with disordered Ga0.5In0.5P alloys such as bulk crystals and epitaxial layers grown by liquid phase epitaxy.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Electrical characteristics of Schottky diodes fabricated using plasma assisted chemical vapor deposited diamond films

G. Sh. Gildenblat, S. A. Grot, C. R. Wronski, A. R. Badzian, T. Badzian, and R. Messier

Appl. Phys. Lett. 53, 586 (1988); http://dx.doi.org/10.1063/1.99865 (3 pages) | Cited 72 times

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Schottky diodes were fabricated using gold and aluminum contacts to thin diamond films obtained by a microwave plasma assisted chemical vapor deposition process. The current‐voltage and capacitance‐voltage‐frequency characteristics of these devices are similar to those fabricated on a crystalline diamond base formed by traditional ultrahigh pressure process.
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85.30.Hi Surface barrier, boundary, and point contact devices
73.30.+y Surface double layers, Schottky barriers, and work functions
81.15.Rs Spray coating techniques
73.40.Ns Metal-nonmetal contacts

Defect formation in SiO2/Si(100) by metal diffusion and reaction

M. Liehr, H. Dallaporta, and J. E. Lewis

Appl. Phys. Lett. 53, 589 (1988); http://dx.doi.org/10.1063/1.100630 (3 pages) | Cited 28 times

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The decomposition of SiO2 films on Si(100) during ultrahigh vacuum anneal is found to be strongly enhanced by monolayer amounts of impurities deposited on the SiO2 surface. s‐ and p‐band elements initiate decomposition via formation of volatile suboxides by surface reaction, whereas most transition metals decompose the oxide via laterally inhomogeneous growth of voids in the oxide. Transition metals need to diffuse to the SiO2/Si interface to enhance oxide decomposition via formation of volatile SiO. It is inferred that transition metal particles should be efficient in creating electrical defects in gate oxide layers.
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61.72.Bb Theories and models of crystal defects
68.35.Fx Diffusion; interface formation
68.35.Dv Composition, segregation; defects and impurities
66.30.J- Diffusion of impurities

Radiation‐induced enhancement of minority‐carrier lifetimes in metal/SiO2/Si capacitors having oxides grown in O2 with trichloroethane additive

Xie W. Wang, Yu Wang, Yasushiro Nishioka, Eronides F. da Silva, and T. P. Ma

Appl. Phys. Lett. 53, 592 (1988); http://dx.doi.org/10.1063/1.99866 (3 pages) | Cited 1 time

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It has been found that the minority‐carrier lifetimes in metal/SiO2/Si capacitors having oxides grown in O2 with very small amounts (much smaller than typically used) of trichloroethane can be substantially enhanced by x‐ray irradiation. The depth profile data showed that, immediately after irradiation, the lifetimes in a region close to the SiO2/Si interface would increase significantly while those in the deeper depletion region remained unchanged. Thereafter, the lifetimes throughout the region profiled (1–2 μm) would continuously change with time, and would eventually stabilize at a level much higher than that prior to irradiation. The time constant for lifetimes to reach steady state is typically 1–2 days at room temperature. These results will be explained in terms of the passivation of the generation‐recombination centers in Si by liberated Cl after irradiation.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.72.Bb Theories and models of crystal defects
61.80.Cb X-ray effects

Spatially selective photochemical vapor deposition of GaAs on synthetic fused silica

D. P. Norton and P. K. Ajmera

Appl. Phys. Lett. 53, 595 (1988); http://dx.doi.org/10.1063/1.100631 (3 pages) | Cited 4 times

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Photochemical vapor deposition of polycrystalline GaAs on synthetic fused silica is reported here. A Hg‐Xe arc lamp is used as the light source with triethylgallium and arsine serving as the reactants. We report, for the first time, on a GaAs deposition process using the above‐mentioned light source and reactants which is completely controlled by the light source with no deposition occurring in the absence of light. GaAs thin films of thicknesses up to 1.6 μm have been deposited. X‐ray diffraction, energy‐dispersive spectrometry, and optical transmittance are used to analyze these films.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Minority‐carrier lifetime in GaAs thin films

R. K. Ahrenkiel, D. J. Dunlavy, J. Benner, R. P. Gale, R. W. McClelland, J. V. Gormley, and B. D. King

Appl. Phys. Lett. 53, 598 (1988); http://dx.doi.org/10.1063/1.99867 (2 pages) | Cited 7 times

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Double‐heterostructure devices of type AlxGa1−xAs/GaAs have been fabricated in thin films grown by the cleavage of lateral epitaxial film for transfer process. The electron lifetime in the p‐type GaAs is measured by photoluminescence and found to be 32 ns at the 5×1016 cm−3 doping level. This is the largest reported lifetime for a freestanding GaAs thin film.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors
78.55.Cr III-V semiconductors

Electrical measurements in high Tc Bi‐Sr‐Ca‐Cu‐O thin films

K. Setsune, K. Hirochi, H. Adachi, Y. Ichikawa, and K. Wasa

Appl. Phys. Lett. 53, 600 (1988); http://dx.doi.org/10.1063/1.99868 (3 pages) | Cited 14 times

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Electrical measurements were performed on polycrystalline thin films of the high Tc Bi‐Sr‐Ca‐Cu‐O system. The resistance of the superconducting state was confirmed to be smaller than 10−8 Ω cm at 100 K. It is confirmed directly that the critical current density at 77 K was in excess of 105 A/cm2 and the dependence of critical current on temperature was able to be represented approximately by (1−T/Tc )2.
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents
68.55.Nq Composition and phase identification

High Tc screen‐printed YBa2Cu3O7−x films: Effect of the substrate material

Narottam P. Bansal, Rainee N. Simons, and D. E. Farrell

Appl. Phys. Lett. 53, 603 (1988); http://dx.doi.org/10.1063/1.100632 (3 pages) | Cited 21 times

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Thick films of YBa2Cu3O7−x have been deposited on highly polished alumina, magnesia spinel, nickel aluminum titanate (Ni‐Al‐Ti), and barium tetratitanate (Ba‐Ti) substrates by the screen printing technique. They were baked at 1000 °C for 15 min, oxygen annealed at a lower temperature, and characterized by electrical resistivity measurements, x‐ray diffraction, and optical and scanning electron microscopy. Properties of the films were found to be highly sensitive to the choice of the substrate material. The film on Ba‐Ti turned green after firing, due to a reaction with the substrate and were insulating. A film on Ni‐Al‐Ti had a Tc  (onset) ∼95 K and lost 90% of its resistance by ∼75 K. However, even at 4 K it was not fully superconducting, possibly due to a reaction between the film and the substrate and interdiffusion of the reaction products. The film on alumina had Tc  (onset) ∼96 K, Tc  (zero) ∼66 K, and ΔTc  (10–90%) ∼10 K. Our best film was obtained on spinel and had Tc  (onset) ∼94 K, zero resistance at 81 K, and a transition width (10–90%) of ∼7 K.
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74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures
81.40.Rs Electrical and magnetic properties related to treatment conditions

Preparation of superconducting Y‐Ba‐Cu‐O thick films with preferred c‐axis orientation by a screen‐printing method

Junji Tabuchi and Kazuaki Utsumi

Appl. Phys. Lett. 53, 606 (1988); http://dx.doi.org/10.1063/1.100633 (3 pages) | Cited 31 times

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Superconducting Y‐Ba‐Cu‐O thick films with preferred c‐axis orientation were obtained by a screen‐printing method. Thick films with preferred c‐axis orientation appeared only when the substrate material was YSZ, the film thickness was around 10 μm, and the film was fired at 980 °C for 6 min. The preferred c‐axis orientation was caused by an interface reaction between the Y‐Ba‐Cu‐O thick film and the YSZ substrate. The superconducting characteristics of the thick film were T zeroc =89 K and Jc (77 K)=7 A/cm2 .
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents
74.10.+v Occurrence, potential candidates

Small field behavior of critical current in Y1Ba2Cu3O7 sintered samples

G. Paternò, C. Alvani, S. Casadio, U. Gambardella, and L. Maritato

Appl. Phys. Lett. 53, 609 (1988); http://dx.doi.org/10.1063/1.100634 (3 pages) | Cited 21 times

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Critical currents carried by sintered Y1Ba2Cu3O7 superconducting samples have been measured at different temperatures close to the critical temperature Tc. The effects of an applied magnetic field perpendicular to the current direction have been investigated. A strong reduction of the dc current for field values smaller than the lower critical field Bc1 has been observed. The magnetic field dependence is discussed in terms of weak coupling between grains. The experimental data show an excellent agreement, at low field values, with the theoretical dependence valid for an array of Josephson junctions.
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74.25.Sv Critical currents
74.70.-b Superconducting materials other than cuprates
74.25.N- Response to electromagnetic fields
74.50.+r Tunneling phenomena; Josephson effects
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