APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue

26 Jun 1989

Volume 54, Issue 26, pp. 2619-2730

Page 1 of 2 Pages Next Page | Jump to Page

New high‐efficiency quasi‐continuous operation of a KrF(B→X) excimer lamp excited by microwave discharge

Hiroshi Kumagai and Minoru Obara

Appl. Phys. Lett. 54, 2619 (1989); http://dx.doi.org/10.1063/1.101039 (3 pages) | Cited 29 times

Full Text: | Download PDF

Show Abstract
A quasi‐continuous KrF(B→X) fluorescence of >8 ms pulse duration with 100 Hz operation frequency was observed in a microwave discharge‐pumped KrF lamp. The average KrF fluorescence power was 53 W, obtained with an intrinsic efficiency of 8.3% with a 678 W average microwave power deposition. We also obtained a peak KrF fluorescence power of 120 W with a power efficiency of 12.1%.
Show PACS
52.80.Pi High-frequency and RF discharges

Optoelectronic measurement of picosecond turn‐on delay in InGaAsP laser diodes

E. Adomaitis, P. Blixt, and A. Krotkus

Appl. Phys. Lett. 54, 2622 (1989); http://dx.doi.org/10.1063/1.101040 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
A tandem photoconductive switch, producing nearly rectangular electrical pulses with variable duration from 25 ps to 1 ns, was used for accurate turn‐on delay measurements of a laser diode. Maximum electrical pulse amplitude was 75 V and both rise and fall times were 15 ps. The shortest delay recorded was 60 ps. The carrier lifetime at the lasing threshold was found to be 3.89 ns.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
85.60.-q Optoelectronic devices
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Self‐pumped phase conjugation in potassium niobate (KNbO3)

D. Rytz and Shen De Zhong

Appl. Phys. Lett. 54, 2625 (1989); http://dx.doi.org/10.1063/1.101545 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
Self‐pumped phase conjugation is observed using a KNbO3 crystal. The reflectivity of an external ring phase conjugate mirror is measured as a function of temperature for 515 nm radiation. The maximum reflectivity is 26% at 124 °C. On cooling, the reflectivity decreases and vanishes completely below 62 °C. The phase conjugate nature of the retroreflected beam is illustrated. The temperature‐dependent response time is shown to be proportional to (T−56 °C)−1.
Show PACS
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Electro‐optic depolarization switch on y‐cut LiNbO3 proton‐exchanged channel waveguides

Ray T. Chen

Appl. Phys. Lett. 54, 2628 (1989); http://dx.doi.org/10.1063/1.101546 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
We report the first electro‐optic depolarization (TE guided mode to TM substrate modes) switch on y‐cut LiNbO3 proton‐exchanged channel waveguides operating at 632.8 nm. Tunability of the waveguide ordinary and extraordinary indices through thermal annealing provides an alternative way to reduce the drive voltage. An extinction ratio of 13.5 dB is achieved with 10 V applied voltage on a switch with 4 μm channel width and 3 mm electrode length. The measured capacitance of the electrode is 4.2 pF, which gives a theoretical modulation bandwidth of 1.5 GHz in a 50 Ω lumped electrode structure.
Show PACS
42.79.Gn Optical waveguides and couplers
78.20.Jq Electro-optical effects

All‐optical spatial scanner

P. Varatharajah, A. B. Aceves, and J. V. Moloney

Appl. Phys. Lett. 54, 2631 (1989); http://dx.doi.org/10.1063/1.101041 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
The design of a simple all‐optical spatial scanner, based on a propagating self‐focused channel incident at an oblique angle to a nonlinear dielectric interface, is illustrated using the beam propagation method. The channel asymptotics are shown to be insensitive to the shape of the incident beam profile with the latter satisfying a simple area criterion.
Show PACS
42.79.Ls Scanners, image intensifiers, and image converters
42.79.Pw Imaging detectors and sensors
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Coherent operation of injection‐locked monolithic surface‐emitting diode laser arrays

M. Jansen, J. J. Yang, L. Heflinger, S. S. Ou, M. Sergant, J. Huang, J. Wilcox, L. Eaton, and W. Simmons

Appl. Phys. Lett. 54, 2634 (1989); http://dx.doi.org/10.1063/1.101042 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
A row of six surface‐emitting GaAlAs laser diode arrays was locked in a coupled resonator configuration by means of interconnecting waveguides. An external master oscillator was injected into the first array in order to achieve single longitudinal mode operation and wavelength tunability. Spectral data show all six devices were locked in a single longitudinal mode, with tunable operation of over 60 Å. Far‐field fringe visibilities greater than 60% were achieved at 100 mW output powers.
Show PACS
42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes

Two‐dimensional array of high‐power strained quantum well lasers with λ=0.95 μm

D. P. Bour, P. Stabile, A. Rosen, W. Janton, L. Elbaum, and D. J. Holmes

Appl. Phys. Lett. 54, 2637 (1989); http://dx.doi.org/10.1063/1.101020 (2 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
An incoherent, two‐dimensional array of high‐power lasers operating at λ=0.95 μm is demonstrated. The laser structure consists of a single 70 Å strained In0.2Ga0.8As quantum well active region with an AlGaAs graded‐index separate confinement heterostructure, prepared by atmospheric pressure organometallic vapor phase epitaxy. The rack‐and‐stack array contains 536 oxide‐stripe emitter elements in a 1.7 mm×1 cm area, producing approximately 200 Watts at a 60 A drive current. Under pulsed operation the external differential quantum efficiency is 40% while the power conversion efficiency reaches 16%. At high power, greater than 90% of the individual elements are lasing, with an overall spectral width Δλ∼5 mm.
Show PACS
42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

High‐current formed ferrite plasma cathode

K. Watanabe, F. A. van Goor, and W. J. Witteman

Appl. Phys. Lett. 54, 2639 (1989); http://dx.doi.org/10.1063/1.101021 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
A new type of plasma cathode for x‐ray and electron beam generation has been demonstrated using a formed ferrite plasma source where a durable filament on the ferrite rod creates a large area of plasma surface as the electron source. Measured anode voltage‐current relationships show the space‐charge‐limited operation with a high current density of 17 A/cm2 at 70 kV anode voltage during 2.5 μs. This source is promising for high repetition rate operation with a long life.
Show PACS
52.59.Mv High-voltage diodes
07.85.-m X- and γ-ray instruments
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
07.77.-n Atomic, molecular, and charged-particle sources and detectors

Compact E parallel B type end‐loss ion mass‐resolving energy analyzer

Yousuke Nakashima, Minoru Yokoyama, Yoshio Imai, Kiyoshi Yatsu, and Syoichi Miyoshi

Appl. Phys. Lett. 54, 2642 (1989); http://dx.doi.org/10.1063/1.101022 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
A compact E parallel B (E∥B) type end‐loss ion mass‐resolving energy analyzer was fabricated and tested. In the analyzer, a small‐angle deflection magnet and a preaccelerator/decelerator of end‐loss ions are adopted in order to reduce the size and to expand an energy range with a sufficient energy resolution. Orbit calculations in the E∥B fields including the influence of fringe fields were made by a Monte Carlo code in which the effects of finite radius and angle of the incident ions are taken into consideration. Preliminary measurements on the GAMMA 10 tandem mirror were successfully performed and it was confirmed that the analyzer has capabilities for the spectrometer of end‐loss ions.
Show PACS
52.70.Nc Particle measurements
07.75.+h Mass spectrometers
28.52.Av Theory, design, and computerized simulation
52.55.-s Magnetic confinement and equilibrium

Dual‐mode microwave/radio frequency plasma deposition of dielectric thin films

L. Martinu, J. E. Klemberg‐Sapieha, and M. R. Wertheimer

Appl. Phys. Lett. 54, 2645 (1989); http://dx.doi.org/10.1063/1.101566 (3 pages) | Cited 20 times

Full Text: | Download PDF

Show Abstract
Thin films have been deposited in a ‘‘dual frequency mode’’ plasma, in which differing amounts of radio frequency (rf, 13.56 MHz) power were applied to the substrate, while sustaining the plasma with constant microwave (2.45 GHz) power. We report results pertaining to deposition of silicon oxide and organosilicon thin films. The rf‐induced negative dc self‐bias voltage is shown to affect plasma‐chemical reactions, causing very significant changes in the deposition rate, film composition, and dielectric properties of the resulting materials. This provides a powerful new technique for producing ‘‘tailored’’ films, while preserving the important advantages of high deposition rates and low substrate temperatures.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
52.80.Pi High-frequency and RF discharges
68.55.-a Thin film structure and morphology
77.55.-g Dielectric thin films

Coarsening phenomenon of Si clusters on artificial nucleation sites

H. Kumomi and T. Yonehara

Appl. Phys. Lett. 54, 2648 (1989); http://dx.doi.org/10.1063/1.101023 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
A coarsening phenomenon of Si clusters is investigated in the process of nucleation and growth. In the early stage of chemical vapor deposition, multiple fine clusters of Si are nucleated on the small portion of an artifical nucleation site. A large cluster emerges among the fine clusters and grows rapidly as the deposition proceeds. As a result, the site is occupied by only one large cluster, while the fine clusters seem to disappear. Such a phenomenon is responsible for the mechanism in which a single nucleus is selected to grow on the site.
Show PACS
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.Rh Phase transitions and critical phenomena

Forces in atomic force microscopy in air and water

A. L. Weisenhorn, P. K. Hansma, T. R. Albrecht, and C. F. Quate

Appl. Phys. Lett. 54, 2651 (1989); http://dx.doi.org/10.1063/1.101024 (3 pages) | Cited 248 times

Full Text: | Download PDF

Show Abstract
A new atomic force microscope, which combines a microfabricated cantilever with an optical lever detection system, now makes it possible to measure the absolute force applied by a tip on a surface. This absolute force has been measured as a function of distance (=position of the surface) in air and water over a range of 600 nm. In the absolute force versus distance curves there are two transitions from touching the surface to a total release in air caused by van der Waals interaction and surface tension. One transition is due to lifting off the surface; the other is due to lifting out of an adsorbed layer on the surface. In water there is just one transition due to lifting off the surface. There is also a transition in air and water when the totally released tip is pulled down to touch the surface as the surface and tip are brought together. Based on the force versus distance curves, we propose a procedure to set the lowest possible imaging force. It can now be as low as 10−9 N or less in water and 10−7 N in air.
Show PACS
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
68.35.Gy Mechanical properties; surface strains
68.08.-p Liquid-solid interfaces
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
07.90.+c Other topics in instruments, apparatus, and components common to several branches of physics and astronomy (restricted to new topics in section 07)

Phase front measurements of AlGaAs 830 nm phase‐locked lasers with a real‐refractive‐index waveguide

K. Shinozaki, R. Furukawa, T. Fukunaga, and N. Watanabe

Appl. Phys. Lett. 54, 2654 (1989); http://dx.doi.org/10.1063/1.101025 (2 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
A phase‐locked laser array with refractive‐index waveguides and emitting a low phase‐aberration beam is described. A fundamental supermode operation of an evanescent‐coupled three‐element laser array which emits up to 200 mW in a single diffraction‐limited beam is achieved. The full beam angle at the half‐power point is 3.2° in the direction of parallel to the p‐n junction. This phase aberration is less than λ/14 from 50 to 150 mW. The extremely low phase aberration (0.022λ) is measured at 50 mW.
Show PACS
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.Px Semiconductor lasers; laser diodes

Electrical and optical time‐of‐flight experiments in GaAs/AlAs superlattices

H. Schneider, W. W. Rühle, K. v. Klitzing, and K. Ploog

Appl. Phys. Lett. 54, 2656 (1989); http://dx.doi.org/10.1063/1.101026 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
The dynamics of electron transport by sequential resonant and nonresonant tunneling along the growth direction of tight‐binding GaAs/AlAs superlattices is studied by electrical time‐of‐flight experiments and by time‐resolved photoluminescence. In the limit where the decay time of the photoluminescence is determined by transport (and not by recombination), we observe structures in the field dependences of both the optical and electrical response times which are related to resonances between different electronic subbands of adjacent wells. Here the time‐resolved photoluminescence and the electrical time‐of‐flight experiment provide independent tools to investigate the dynamics of the conduction processes.
Show PACS
79.60.Dp Adsorbed layers and thin films
79.70.+q Field emission, ionization, evaporation, and desorption
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.47.-p Spectroscopy of solid state dynamics
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Impurity aggregation at individual dislocations in GaAs observed by means of a simultaneous electron beam induced current and cathodoluminescence technique

M. Eckstein, A. Jakubowicz, M. Bode, and H.‐U. Habermeier

Appl. Phys. Lett. 54, 2659 (1989); http://dx.doi.org/10.1063/1.101027 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
Using simultaneous measurements of electron beam induced current and cathodoluminescence intensity it is possible to distinguish between different contributions to signal magnitude and contrast at defects. In this letter we report on the application of this technique to investigate the role of impurity aggregation and defect decoration on the recombination behavior of dislocations in GaAs. In the experiment described here we diffused copper into the crystal. We observed an increase of signal contrasts and changes in the contrast profiles. With the help of computer simulations these experimental results can be interpreted as a homogeneous decoration of dislocations, the formation of precipitates at the dislocations, and a reduced minority‐carrier diffusion length in the bulk.
Show PACS
61.72.Bb Theories and models of crystal defects
78.60.Hk Cathodoluminescence, ionoluminescence
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities

Investigation of CdTe surfaces by x‐ray photoelectron spectroscopy

A. Waag, Y. S. Wu, R. N. Bicknell‐Tassius, and G. Landwehr

Appl. Phys. Lett. 54, 2662 (1989); http://dx.doi.org/10.1063/1.101028 (3 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
The influence of different CdTe substrate preheats prior to II‐VI molecular beam epitaxial growth on surface stoichiometry and oxygen contamination has been studied using x‐ray photoelectron spectroscopy. For 15 min preheats with temperatures ranging from 100 to 450 °C, the cadmium to tellurium ratio and the oxide overlayer thickness of (100) CdTe surfaces was determined. A preheat temperature of 200 °C is found to produce optimum stoichiometry. For lower temperatures the CdTe surface is still tellurium rich, as left after etching with bromine‐methanol. For higher temperatures, cadmium evaporates faster than tellurium, leaving again a tellurium‐rich surface. The oxygen contamination remains nearly unchanged for temperatures below 250 °C. Oxygen starts to blow off for preheat temperatures above 250 °C, with a steep decrease between 250 and 350 °C. For preheat temperatures higher than 350 °C, the oxygen contamination drops below the detection limit.
Show PACS
68.35.Dv Composition, segregation; defects and impurities
81.65.-b Surface treatments
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Supersaturated substitutional Ga+ ion implanted in silicon studied by x‐ray photoelectron spectroscopy

Z. H. Lu, E. Sacher, A. Selmani, and A. Yelon

Appl. Phys. Lett. 54, 2665 (1989); http://dx.doi.org/10.1063/1.101029 (3 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Highly degenerate Ga‐doped Si (100) has been prepared using 4 keV liquid‐metal ion gun implantation and rapid thermal annealing, and has been studied using x‐ray photoelectron spectroscopy. Si 2p core electron measurements provide the most direct experimental evidence of annealing‐promoted tetrahedral SiGa bonds. The Ga, as high as 10 at. % after annealing at 500 °C, was found to occupy substitutional sites close to the surface. The surface concentration decreased with increasing annealing temperature. We find that the full width at half maximum of the Si 2p core levels increases with increasing substitutional Ga concentration. This can be explained by bond‐length and bond‐angle deviations of nearby SiSi bonds caused by SiGa bond formation and the resultant net static charge variations in the silicon lattice. We discuss the binding energy shift of both the Si 2p core level and the valence‐band maximum produced by SiGa bonding.
Show PACS
61.72.uf Ge and Si
71.55.Ht Other nonmetals
61.72.Bb Theories and models of crystal defects
81.65.-b Surface treatments

Current oscillations at high electrical fields in the two‐dimensional electron gas in GaAs/AlGaAs heterostructures

P. Hendriks, A. A. M. Staring, R. G. van Welzenis, J. H. Wolter, W. Prost, K. Heime, W. Schlapp, and G. Weimann

Appl. Phys. Lett. 54, 2668 (1989); http://dx.doi.org/10.1063/1.101030 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
In the two‐dimensional electron gas (2DEG) of GaAs/AlGaAs heterostructures, we observe a new type of oscillation in the current at electric fields above 0.8 kV/cm. These oscillations have two characteristic frequencies, around 200 MHz and 2.5 GHz. We show that these oscillations arise from properties of the 2DEG and depend on both electric field and magnetic fields. They disappear abruptly when magnetic fields above 0.5 T are applied.
Show PACS
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Fq High-field and nonlinear effects
73.61.Ey III-V semiconductors

Examination of rapid thermal annealed GaAs using cathodoluminescence

C. E. Third, F. Weinberg, and L. Young

Appl. Phys. Lett. 54, 2671 (1989); http://dx.doi.org/10.1063/1.101031 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
Samples of semi‐insulating GaAs were annealed for 5–18 s at 650–950 °C using rapid thermal annealing. Cathodoluminescence was used to compare as‐received and annealed samples to determine the effect of the heat treatment. Cathodoluminescence images of the surface of samples show a change in background intensity after heating. Images of cleaved cross sections indicate that the change is not uniform throughout the thickness of the sample.
Show PACS
78.60.Hk Cathodoluminescence, ionoluminescence
81.40.Tv Optical and dielectric properties related to treatment conditions

High‐efficiency indium tin oxide/indium phosphide solar cells

X. Li, M. W. Wanlass, T. A. Gessert, K. A. Emery, and T. J. Coutts

Appl. Phys. Lett. 54, 2674 (1989); http://dx.doi.org/10.1063/1.101363 (3 pages) | Cited 42 times

Full Text: | Download PDF

Show Abstract
Improvements in the performance of indium tin oxide/indium phosphide (ITO/InP) solar cells have been achieved by using dc magnetron sputter deposited n‐ITO onto an epitaxial p/p+ structure grown on good quality commercial p+ bulk substrates. The composition of the sputtering gas has been investigated and the highest efficiency cells resulted when the surface of the epilayer was exposed to an Ar/H2 plasma before depositing the bulk of the ITO in a more typical Ar/O2 plasma. With H2 processing, record efficiencies of 18.9% global, 1000 W m−2, 25 °C (17.0% air mass zero) were achieved. Without H2 processing, the devices exhibited lower efficiencies and were unstable. Type conversion of the InP was shown to occur and was established as being associated with the ITO (possibly due to Sn donors) rather than sputter damage. These improvements in performance have resulted from the optimization of the doping, thickness, transport, and surface properties of the p‐type base, as well as from better control over the ITO deposition procedure.
Show PACS
84.60.Jt Photoelectric conversion
85.30.De Semiconductor-device characterization, design, and modeling

Low‐resistance nonspiking ohmic contact for AlGaAs/GaAs high electron mobility transistors using the Ge/Pd scheme

L. C. Wang, S. S. Lau, E. K. Hsieh, and J. R. Velebir

Appl. Phys. Lett. 54, 2677 (1989); http://dx.doi.org/10.1063/1.101032 (3 pages) | Cited 30 times

Full Text: | Download PDF

Show Abstract
Nonspiking (nonalloyed) Ge/Pd ohmic contact formed via solid phase reaction on an AlGaAs/GaAs high electron mobility transistor (HEMT) was investigated. The surface morphology of the Ge/Pd contact is smooth and planar with a typical contact resistivity of about 3×10−7 Ω cm2. The current‐voltage characteristics of the HEMTs with the Ge/Pd contacts are similar to those with the conventional AuGe/Ni spiking (alloyed) contacts. Since only a thin substrate surface layer of 100–200 Å was reacted with the Ge/Pd contact, we can conclude that ohmic contacts can be made to the two‐dimensional electron gas without deep penetration of the metallization. This observation is in agreement with the concept that transport due to tunneling is significant across heterojunctions. The Ge/Pd contact may be potentially useful in HEMT integrated circuit technology.
Show PACS
73.40.Cg Contact resistance, contact potential
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
85.30.Hi Surface barrier, boundary, and point contact devices

Growth of cubic (zinc blende) CdSe by molecular beam epitaxy

N. Samarth, H. Luo, J. K. Furdyna, S. B. Qadri, Y. R. Lee, A. K. Ramdas, and N. Otsuka

Appl. Phys. Lett. 54, 2680 (1989); http://dx.doi.org/10.1063/1.101033 (3 pages) | Cited 84 times

Full Text: | Download PDF

Show Abstract
We report the growth of cubic (zinc blende) CdSe epilayers on [100] GaAs substrates by molecular beam epitaxy. The lattice constant of the CdSe epilayers is 6.077 Å, and the energy gap is 1.75, 1.74, and 1.67 at 10, 80, and 300 K, respectively.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
73.61.Ga II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Degradation kinetics of GaAs quantum well lasers

Eswar C. Madhava‐Menon, P. M. Petroff, and R. G. Waters

Appl. Phys. Lett. 54, 2683 (1989); http://dx.doi.org/10.1063/1.101034 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
Degradation‐induced dark line defect growth velocities have been found to be inversely proportional to the operating temperature in quantum well lasers under current injection. A model has been developed, which considers the differing band structure and role of deep levels in quantum well structures as opposed to conventional double‐heterostructure lasers. Our findings have significant implications for device yield since they suggest nontraditional screening strategies that recognize temperature as a decelerant for the sudden failure mode.
Show PACS
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

High quality quantum wells of InGaP/GaAs grown by molecular beam epitaxy

M. J. Hafich, J. H. Quigley, R. E. Owens, G. Y. Robinson, Du Li, and N. Otsuka

Appl. Phys. Lett. 54, 2686 (1989); http://dx.doi.org/10.1063/1.101035 (3 pages) | Cited 35 times

Full Text: | Download PDF

Show Abstract
High quality quantum wells of GaAs confined by barriers of InGaP have been grown by gas‐source molecular beam epitaxy. High‐resolution lattice images obtained with transmission electron microscopy of single quantum wells reveal high quality interfaces for both the normal InGaP/GaAs and the inverted GaAs/InGaP interface. Multiple‐line low‐temperature photoluminescence emission is observed for the thinnest GaAs quantum well. The range of well thicknesses examined was 0.6–5.2 nm, with the smallest well producing a quantum confinement energy shift of over 410 meV, corresponding to photoluminescence emission at 640 nm (1.94 eV) from GaAs.
Show PACS
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.55.Cr III-V semiconductors
68.35.B- Structure of clean surfaces (and surface reconstruction)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Low‐temperature selective epitaxial growth of silicon at atmospheric pressure

T. O. Sedgwick, M. Berkenblit, and T. S. Kuan

Appl. Phys. Lett. 54, 2689 (1989); http://dx.doi.org/10.1063/1.101036 (3 pages) | Cited 41 times

Full Text: | Download PDF

Show Abstract
Epitaxial Si has been grown selectively on oxide‐patterned substrates from 850 down to 600 °C for the first time in the Si‐Cl‐H system at atmospheric pressure. Si deposition was achieved by hydrogen reduction of dichlorosilane in an ultraclean system using a load lock. Epitaxy was achieved at low temperatures only when the hydrogen was purified to remove traces of H2O and O2 implying that an oxygen‐free environment is the most important factor controlling epitaxy at low temperatures. Cross‐sectional transmission electron micrographs reveal perfect crystallinity in the epitaxial layer and a totally clean and featureless interface between epitaxy and substrate.
Show PACS
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.55.-a Thin film structure and morphology
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close