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27 Mar 1989

Volume 54, Issue 13, pp. 1191-1279

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Nonlinear optical phase conjugation using F+3 centers in LiF crystals

Hongen Gu, Lan Qi, and Liangfeng Wan

Appl. Phys. Lett. 54, 1191 (1989); http://dx.doi.org/10.1063/1.100748 (2 pages) | Cited 1 time

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We report the experimental observation of nonlinear optical phase conjugation using F+3 centers in LiF crystals. Using a pulsed dye laser (460 nm) as pump light, a maximum phase conjugate reflectivity of about 0.1% was obtained.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
61.72.Bb Theories and models of crystal defects
61.72.jn Color centers
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

GaInAsP/InP lasers with etched mirrors by reactive ion etching using a mixture of ethane and hydrogen

Teruhito Matsui, Hiroshi Sugimoto, Toshiyuki Ohishi, Yuji Abe, Ken’ichi Ohtsuka, and Hitoshi Ogata

Appl. Phys. Lett. 54, 1193 (1989); http://dx.doi.org/10.1063/1.100749 (2 pages) | Cited 11 times

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A reactive ion etching method is applied to fabricate mirrors of 1.5 μm GaInAsP/InP mass transport lasers using a mixture of ethane and hydrogen as an etchant. Threshold currents as low as 35 mA are achieved for the 300‐μm‐long cavity lasers with one etched and one cleaved facet. The differential quantum efficiencies of the lasers with one dry etched facet and both dry etched facets are 13 and 9.5%, respectively.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.82.-m Integrated optics

Frequency doubling in weakly guiding optical fibers

Yijiang Chen

Appl. Phys. Lett. 54, 1195 (1989); http://dx.doi.org/10.1063/1.100750 (3 pages)

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The letter examines the photoinduced model for explaining efficient second‐harmonic generation in glass fibers with inversion symmetry. We show that a critical pump power exists for efficient second‐harmonic generation in a fiber under nonindex matching. Our study also reveals that the roles of core‐cladding interface and bulk nonlinearities are comparable in achieving efficient second‐harmonic generation under nonindex matching condition.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.81.Gs Birefringence, polarization
42.70.Ce Glasses, quartz

Bistable operation of InGaAsP lasers using different absorber positions

Ulf Öhlander and Olof Sahlén

Appl. Phys. Lett. 54, 1198 (1989); http://dx.doi.org/10.1063/1.100751 (3 pages) | Cited 2 times

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Experiments reveal that the physical characteristics related to absorptive bistability, such as lasing threshold, hysteresis width, and carrier redistribution, are greatly altered when the absorber position is changed from the middle section to one of the end‐facet sections in a three‐section laser diode.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Time direction determination of asymmetric ultrashort optical pulses from second‐harmonic generation autocorrelation signals

Kazunori Naganuma, Kazuo Mogi, and Hajime Yamada

Appl. Phys. Lett. 54, 1201 (1989); http://dx.doi.org/10.1063/1.100752 (2 pages) | Cited 8 times

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A general procedure for determining pulse asymmetry including time direction is described. Fundamental and second‐harmonic interferometric autocorrelations are measured before and after passing through a glass block. Pulse form is reconstructed iteratively for each pulse, yet time direction is ambiguous. Time direction for both pulses is then simultaneously determined by phase curvature comparison in the frequency domain, taking the known dispersion of the glass block into account. This results in complete evaluation of ultrashort optical pulses. This method is demonstrated successfully for passively mode‐locked dye laser pulses.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Multiple quantum well passive mode locking of a NaCl color center laser

M. N. Islam, E. R. Sunderman, I. Bar‐Joseph, N. Sauer, and T. Y. Chang

Appl. Phys. Lett. 54, 1203 (1989); http://dx.doi.org/10.1063/1.100753 (3 pages) | Cited 4 times

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Using multiple quantum well (MQW) saturable absorbers, we passively mode locked a NaCl color center laser to produce transform‐limited, pedestal‐free pulses with τ as short as 275 fs and peak power as high as 3.7 kW. Because of exciton ionization with a 200±30 fs time constant, the MQW shows a fast absorption recovery that is comparable to our pulse widths. This fast component plays a major role in pulse shaping and may limit the pulse width. We also show that the wavelength for the short pulses can be tuned from 1.59 to 1.7 μm by choosing MQWs with different band gaps.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Ah General laser theory

Third‐harmonic generation of an alexandrite laser in β‐BaB2O4

Shinichi Imai, Toshitaka Yamada, Yasutomo Fujimori, and Ken Ishikawa

Appl. Phys. Lett. 54, 1206 (1989); http://dx.doi.org/10.1063/1.101486 (3 pages) | Cited 8 times

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We report the first cascading third‐harmonic generation by light from an alexandrite laser in β‐BaB2O4. Ultraviolet (UV) light was generated by mixing the fundamental laser light with the second‐harmonic light. The calculated effective nonlinear constant for type I mixing is nearly three times larger than that for type II. Using type I mixing we demonstrated UV light generation in the wavelength region 244–259 nm with 24% mixing efficiency at maximum.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.-e Optical properties of bulk materials and thin films

High‐efficiency TEM00 continuous‐wave (Al,Ga)As epitaxial surface‐emitting lasers and effect of half‐wave periodic gain

P. L. Gourley, T. M. Brennan, B. E. Hammons, S. W. Corzine, R. S. Geels, R. H. Yan, J. W. Scott, and L. A. Coldren

Appl. Phys. Lett. 54, 1209 (1989); http://dx.doi.org/10.1063/1.100717 (3 pages) | Cited 20 times

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We report room‐temperature, continuous‐wave (cw), photopumped operation of (Al,Ga)As surface‐emitting lasers grown by molecular beam epitaxy. These monolithic semiconductor lasers comprise two multilayer semiconductor mirrors surrounding a layered active region. In the active region, GaAs quantum wells are spaced with half‐wave periodicity to center on standing‐wave maxima of the cavity optical field. By comparing threshold data for different lasers grown with and without half‐wave periodicity, we observe the first experimental evidence for reduced cw lasing threshold (as low as 2×104 W/cm2 ) with periodic gain in an epitaxial surface‐emitting laser. Up to 50 mW with high efficiency (35% total, 80% differential) and narrow spectral linewidth (2 Å) have been measured. A very high quality beam with low divergence (2.5°) and circular TEM00 profile has been observed. All of these observations represent significant advances for surface‐emitting laser technology.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
78.45.+h Stimulated emission

Electronic probe measurements of pulsed copper ablation at 248 nm

R. J. von Gutfeld and R. W. Dreyfus

Appl. Phys. Lett. 54, 1212 (1989); http://dx.doi.org/10.1063/1.100718 (3 pages) | Cited 48 times

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We have used a single wire probe to measure time of flight velocities for copper photoablated with a 248 nm pulsed excimer laser. For the range of fluences, 1.6–12 J/cm2, we find copper ion velocities in the range of 1–2×106 cm/s. We have used Langmuir probe theory to determine ion densities and electron temperatures as a function of fluence and target‐probe separation. Results are consistent with recent kinetic and photoablated plasma theories.
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79.20.Ds Laser-beam impact phenomena
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.70.Ds Electric and magnetic measurements
52.25.Fi Transport properties

Low‐frequency, multigigawatt microwave pulses generated by a virtual cathode oscillator

R. Platt, B. Anderson, J. Christofferson, J. Enns, M. Haworth, J. Metz, P. Pelletier, R. Rupp, and D. Voss

Appl. Phys. Lett. 54, 1215 (1989); http://dx.doi.org/10.1063/1.100719 (2 pages) | Cited 14 times

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An axially extracted virtual cathode oscillator driven by a 4 MV, 80 kA elecron beam has been used to generate microwave pulses with an average peak power of 7.5 GW at a frequency of 1.17 GHz. Peak power efficiency was 5.3% and energy efficiency was 2.3%.
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84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)

Growth kinetics of amorphous interlayer formed by interdiffusion of polycrystalline Ti thin‐film and single‐crystal silicon

W. Lur and L. J. Chen

Appl. Phys. Lett. 54, 1217 (1989); http://dx.doi.org/10.1063/1.100720 (3 pages) | Cited 65 times

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The growth kinetics of amorphous interlayer (a interlayerbb) in polycrystalline Ti films on single‐crystal‐silicon has been studied by cross‐sectional transmission electron microscopy. The growth was found to follow a linear growth law initially in samples annealed at 350–425 °C. The activation energy of the linear growth was measured to be 1.6±0.3 eV. Maximum thicknesses of the a interlayers were measured to be of the order of 10 nm. The formation of an a interlayer was observed in samples annealed at a temperature as high as 600 °C. The formation and growth kinetics of a interlayers in Ti/Si and Ni/Zr systems are compared. Essential factors for the formation and growth of an a interlayer are discussed. The results represent the first report on the growth kinetics of an a interlayer in metal thin films on single‐crystal silicon.
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68.35.Fx Diffusion; interface formation
68.55.-a Thin film structure and morphology
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Calculated phonon spectra of Si/Ge (001) superlattices: Features for interface characterization

E. Molinari and A. Fasolino

Appl. Phys. Lett. 54, 1220 (1989); http://dx.doi.org/10.1063/1.100721 (3 pages) | Cited 44 times

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We present a model calculation or phonon spectra of Si/Ge superlattices along the (001) growth direction. The most relevant result for structural characterization is that interface modes involving the SiGe bonds at the interface are predicted only in the transverse and not in the longitudinal polarization. The detection of such modes between the Si‐like and Ge‐like optical modes in backscattering Raman spectra from the (001) surface must then be ascribed to interface disorder or alloying.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.-w Optical properties of specific thin films
63.20.D- Phonon states and bands, normal modes, and phonon dispersion
78.30.Hv Other nonmetallic inorganics

Simple ion milling preparation of 〈111〉 tungsten tips

D. K. Biegelsen, F. A. Ponce, and J. C. Tramontana

Appl. Phys. Lett. 54, 1223 (1989); http://dx.doi.org/10.1063/1.100722 (3 pages) | Cited 15 times

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Ion milling of single‐crystal tungsten 〈111〉 wire results in a steady‐state faceted tip which is sharp on a near‐atomic scale. The self‐limiting nature of the process makes preparation particularly simple and therefore useful for applications such as scanning tunneling microscope tips, focused ion beam sources, etc.
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81.05.Bx Metals, semimetals, and alloys
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.80.Jh Ion radiation effects

Improvement of the stability of hydrogenated amorphous silicon films and solar cells by light pulse treatment

W. A. Nevin, H. Yamagishi, and Y. Tawada

Appl. Phys. Lett. 54, 1226 (1989); http://dx.doi.org/10.1063/1.100723 (3 pages) | Cited 9 times

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The effect of exposure to high‐intensity Xe light pulses at moderate temperatures on the electrical properties and light‐induced degradation of intrinsic a‐Si:H films and a‐Si two‐stacked tandem solar cells is described. Little change is observed in the dark electrical properties of the films and in the efficiency of the solar cells, while the photoconductivity of the films is lowered. The light stability of both the films and solar cells is considerably improved, such that the degradation of a light pulse treated solar cell is almost 30% smaller than its dark reference after 23 h under AM1.
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73.50.Pz Photoconduction and photovoltaic effects
81.40.Rs Electrical and magnetic properties related to treatment conditions
84.60.Jt Photoelectric conversion
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Effect of integrated circuit metallization linewidth on the distribution of electromigration lifetimes

R. J. Dulniak

Appl. Phys. Lett. 54, 1229 (1989); http://dx.doi.org/10.1063/1.100724 (3 pages)

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Two sets of experiments have been carried out to investigate the effect of linewidth on the electromigration median time to failure and the standard deviation. The experiments were carefully designed to eliminate systematic sources of error and to leave linewidth as the only variable. The results show that as the linewidth is reduced to the film thickness value, both the median time to failure and the standard deviation dramatically increase.
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85.40.Qx Microcircuit quality, noise, performance, and failure analysis
66.30.Qa Electromigration

Distinct observation of interwell coupling effect on optical transitions in double quantum wells in an electric field

Yasunori Tokuda, Kyozo Kanamoto, Noriaki Tsukada, and Takashi Nakayama

Appl. Phys. Lett. 54, 1232 (1989); http://dx.doi.org/10.1063/1.100725 (3 pages) | Cited 24 times

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We present results of an experimental study of interwell coupling effects using asymmetric double quantum well structures under electric fields. Data were obtained by means of photocurrent spectroscopy. It was concluded that remarkable variations in both energy and intensity of excitonic transitions, which were observed for the strongly coupled quantum wells, originate from the intersection of two quantized levels in the conduction band.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
78.20.Jq Electro-optical effects

Inhomogeneous defect activation by rapid thermal processes in silicon

Vu Thuong‐Quat, W. Eichhammer, and P. Siffert

Appl. Phys. Lett. 54, 1235 (1989); http://dx.doi.org/10.1063/1.100726 (3 pages) | Cited 10 times

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In silicon, rapid thermal processes are observed to induce recombination centers whose distribution as a function of the depth below the surfaces shows an extremum towards the middle of 1000‐μm‐thick samples. This nonhomogeneous defect activation is correlated to a surface effect. Impurity‐related complexes are believed to be the origin of these recombination centers.
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61.72.Bb Theories and models of crystal defects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.65.-b Surface treatments

Schottky diode and field‐effect transistor on InP

S. Loualiche, A. Ginoudi, H. L’Haridon, M. Salvi, A. Le Corre, D. Lecrosnier, and P. N. Favennec

Appl. Phys. Lett. 54, 1238 (1989); http://dx.doi.org/10.1063/1.100727 (3 pages) | Cited 8 times

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Schottky diode has been realized on InP by a special dry surface treatment. The diode reaches a breakdown voltage of 60 V and the reverse current remains at 0.6 μA under 30 V reverse voltage. The best device shows a reverse current of 0.2 nA at 1 V voltage with an ideality factor of 1.54. The Schottky has been used as a gate in the fabrication of field‐effect transistors (FETs) on InP by ion implantation and chemical beam epitaxy. The ion‐implanted FET with a channel concentration of 2×1017 cm−3 shows a transconductance of 107 mS/mm at room temperature for a 3 μm gate length.
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85.30.Hi Surface barrier, boundary, and point contact devices
85.30.Tv Field effect devices
73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

GaAs/GaSb strained‐layer heterostructures deposited by metalorganic vapor phase epitaxy

E. T. R. Chidley, S. K. Haywood, R. E. Mallard, N. J. Mason, R. J. Nicholas, P. J. Walker, and R. J. Warburton

Appl. Phys. Lett. 54, 1241 (1989); http://dx.doi.org/10.1063/1.100728 (3 pages) | Cited 13 times

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The growth of strained GaSb/GaAs quantum wells has been attempted for the first time (7% lattice mismatch), with the antimonide layers being constrained to take on the GaAs lattice parameter in the interface plane. The critical thickness for pseudomorphic growth of the strained layer was about 15 Å, with further growth resulting in islands of GaSb crystallites over the wafer surface. Photoluminescence spectra and photoconductivity from both single and double wells showed a strong signal at approximately 1.3 eV, identified as a Γ point transition. This was not consistent with band structure calculations for a GaSb/GaAs well, suggesting an error in the estimation of the band offsets and/or As incorporation in the strained layer.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.50.Pz Photoconduction and photovoltaic effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Mobility‐lifetime products in CuGaSe2

I. Balberg, D. Albin, and R. Noufi

Appl. Phys. Lett. 54, 1244 (1989); http://dx.doi.org/10.1063/1.101487 (3 pages) | Cited 11 times

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We report the first accurate determination of mobility‐lifetime products, μτ, in thin films of a Cu‐ternary chalcopyrite by photoconductivity and ambipolar diffusion length measurements. We found that for Cu‐deficient, nearly intrinsic CuGaSe2 at an illumination of about 0.25 AM1 the hole’s μτ is 6×10−6 cm2/V while the electron’s μτ is 2.6×10−9 cm2/V. The lifetime dependence on the light intensity was found to be characterized by the exponent γ−1=−0.44.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.20.Fr Low-field transport and mobility; piezoresistance
72.40.+w Photoconduction and photovoltaic effects

Critical comparison of light‐induced changes in sub‐band‐gap absorption and photoconductivity in hydrogenated amorphous silicon

Enakshi Bhattacharya, A. H. Mahan, Richard S. Crandall, and J. I. Pankove

Appl. Phys. Lett. 54, 1247 (1989); http://dx.doi.org/10.1063/1.100729 (3 pages) | Cited 8 times

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This work compares changes in the density of states due to light‐induced degradation estimated by photoconductivity with those measured by photothermal deflection spectroscopy (PDS) on a series of hydrogenated amorphous silicon (a‐Si:H) films having different valence bandtail widths (E0 ). We find that the photoconductivity measurements indicate orders of magnitude larger defect density changes than do the PDS measurements as the valence bandtail becomes broader. This conflict is resolved by showing that this difference is due to changes in the recombination rate coefficient K with valence bandtail width. The absolute change in K increases exponentially with E0. However, the change in K relative to the K of the annealed state decreases with E0, explaining why poor material shows a smaller light‐induced effect.
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71.23.-k Electronic structure of disordered solids
72.40.+w Photoconduction and photovoltaic effects
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Fermi level movement at the Cs/GaAs (110) interfaces

Renyu Cao, Ken Miyano, Tom Kendelewicz, Ingolf Lindau, and William E. Spicer

Appl. Phys. Lett. 54, 1250 (1989); http://dx.doi.org/10.1063/1.100730 (3 pages) | Cited 10 times

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Fermi level (Ef ) movement and overlayer metallization at room temperature (RT) and 110 K low‐temperature (LT) Cs/GaAs (110) interfaces are studied using photoemission. Initial p‐type GaAs band bending is attributed to the surface donor states that originate from Cs atom chemisorption. The Ef stabilization at RT and LT is interpreted in terms of defects and the metal‐induced gap states and the interplay between them. For the latter to dominate, fewer defects and establishment of overlayer metallicity are necessary.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
68.43.-h Chemisorption/physisorption: adsorbates on surfaces

Interdiffusion in a symmetrically strained Ge/Si superlattice

S. J. Chang, K. L. Wang, R. C. Bowman, and P. M. Adams

Appl. Phys. Lett. 54, 1253 (1989); http://dx.doi.org/10.1063/1.100731 (3 pages) | Cited 42 times

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The x‐ray diffraction technique is used to measure the interdiffusion coefficients of a symmetrically strained Ge/Si superlattice consisting of alternating Ge and Si layers grown on a Ge0.4Si0.6 buffer layer. The buffer layer was 200 nm thick and was grown on a Si (100) substrate in order to symmetrize the strain, and thus maintain pseudomorphic growth of the superlattice. After the sample was annealed at different temperatures with various times, the interdiffusion coefficient Dλ was determined by monitoring the intensity decay of the low‐angle x‐ray diffraction peak resulting from the superlattice structure. The activation energy is calculated to be 3.1±0.2 eV in the annealing temperature range of 640–780 °C.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers
61.05.C- X-ray diffraction and scattering

Quantitative resonant tunneling spectroscopy: Current‐voltage characteristics of precisely characterized resonant tunneling diodes

M. A. Reed, W. R. Frensley, W. M. Duncan, R. J. Matyi, A. C. Seabaugh, and H.‐L. Tsai

Appl. Phys. Lett. 54, 1256 (1989); http://dx.doi.org/10.1063/1.101355 (3 pages) | Cited 20 times

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A systematic comparison of precisely characterized resonant tunneling structures is presented. A self‐consistent band bending calculation is used to model the experimentally observed resonant peak positions. lt is found that the peak positions can be accurately modeled if the nominal characterization parameters are allowed to vary within the measurement accuracy of the characterization. As a result, it is found that the asymmetries in the current‐voltage characteristics are solely explainable by tunnel barrier thickness fluctuations.
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73.40.Gk Tunneling
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Photovoltage scanning electron microscopy

L. D. Flesner and M. E. O’Brien

Appl. Phys. Lett. 54, 1259 (1989); http://dx.doi.org/10.1063/1.100732 (3 pages) | Cited 1 time

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A novel diagnostic technique utilizing secondary‐electron energy analysis in a scanning electron microscope to image modulated photovoltages in semiconductor samples is reported. Contacts to the sample are not required, allowing nondestructive inspection of partially processed devices and isolated regions. Photovoltage decay following pulsed illumination, indicative of material and junction quality, can be observed. Applications to silicon on sapphire, InP, and GaAs devices are described.
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72.40.+w Photoconduction and photovoltaic effects
07.78.+s Electron, positron, and ion microscopes; electron diffractometers
85.40.Qx Microcircuit quality, noise, performance, and failure analysis
79.20.Kz Other electron-impact emission phenomena
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