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27 Mar 1989

Volume 54, Issue 13, pp. 1191-1279

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Residual carbon acceptor incorporation in gallium arsenide grown by metalorganic chemical vapor deposition

A. D. Reed, S. S. Bose, and G. E. Stillman

Appl. Phys. Lett. 54, 1262 (1989); http://dx.doi.org/10.1063/1.100733 (3 pages) | Cited 8 times

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Two mechanisms controlling residual carbon acceptor incorporation in GaAs grown by atmospheric pressure metalorganic chemical vapor deposition have been identified: (1) the removal of the first methyl group from trimethylgallium in the gas phase, and (2) the removal of the first hydrogen atom from AsH3 adsorbed on the substrate surface. An analysis of the chemical reactions involved shows that the likely source of the residual carbon acceptor is the surface adsorbed trimethylgallium molecule rather than other carbon species in the reactor.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum well lasers by diffusion of silicon and oxygen from Al‐reduced SiO2

L. J. Guido, J. S. Major, J. E. Baker, N. Holonyak, and R. D. Burnham

Appl. Phys. Lett. 54, 1265 (1989); http://dx.doi.org/10.1063/1.100734 (3 pages) | Cited 17 times

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We describe a convenient method utilizing chemical reduction of SiO2 by Al (from AlxGa1−xAs) to generate Si and O for impurity‐induced layer disordering (IILD) of AlxGa1−xAs‐GaAs quantum well heterostructures (QWHs). Experimental data show that Si‐O diffusion (from SiO2) is an effective source of Si for Si‐IILD and of O that compensates the Si donor, thus resulting in higher resistivity layer‐disordered crystal. The usefulness of the Si‐O IILD source for fabricating low‐threshold disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs QWH lasers is demonstrated.
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68.35.Dv Composition, segregation; defects and impurities
42.55.Px Semiconductor lasers; laser diodes
68.35.Fx Diffusion; interface formation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Temperature dependence of the dielectric constants of semi‐insulating III‐V compounds

Karlheinz Seeger

Appl. Phys. Lett. 54, 1268 (1989); http://dx.doi.org/10.1063/1.100735 (2 pages) | Cited 5 times

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A microwave transmission interference method recently developed has been applied for a determination of the static dielectric constants of semi‐insulating InP, GaP, and GaAs at temperatures of 77 and 300 K.
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77.22.Ch Permittivity (dielectric function)
84.40.Az Waveguides, transmission lines, striplines
72.80.Ey III-V and II-VI semiconductors

Channel sensitivity to gate roughness in a split‐gate GaAs‐AlGaAs heterostructure

Arvind Kumar, Steven E. Laux, and Frank Stern

Appl. Phys. Lett. 54, 1270 (1989); http://dx.doi.org/10.1063/1.100736 (2 pages) | Cited 30 times

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The response of the width of the electron channel at a GaAs‐AlGaAs heterointerface to variations in the gate opening of a split‐gate structure is calculated using a three‐dimensional solution of the Poisson equation in the continuum approximation and is analyzed in terms of the Fourier components of the perturbation. It is found that the effective potential well for the channel electron gas attenuates high wave vector components of the gate roughness.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Laser‐assisted etching of YBa2Cu3O7−δ

B. W. Hussey and A. Gupta

Appl. Phys. Lett. 54, 1272 (1989); http://dx.doi.org/10.1063/1.101488 (3 pages) | Cited 7 times

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Superconducting YBa2Cu3O7−δ has been etched using a focused cw Ar+ laser beam in KOH solution. The results indicate clean and rapid removal of reaction products leaving high aspect ratio grooves. Etch rates are investigated under several conditions; etch geometry is discussed as a function of laser power density and scan speed. The surface reaction with KOH is thermally activated, and the residual material is identified by energy dispersive x‐ray spectroscopy, x‐ray powder diffraction, and chemical analysis.
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81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
81.65.-b Surface treatments
74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates

Interface analysis of Y‐Ba‐Cu‐O films on Al‐coated Si substrates

T. Asano, K. Tran, A. S. Byrne, M. M. Rahman, C. Y. Yang, and J. D. Reardon

Appl. Phys. Lett. 54, 1275 (1989); http://dx.doi.org/10.1063/1.101489 (3 pages) | Cited 13 times

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Y‐Ba‐Cu‐O films were deposited on Al‐coated Si substrates by the plasma‐spray method. The Al buffer layer appears to be effective in yielding crack‐free adhesive Y‐Ba‐Cu‐O films. Resistance measurements indicate that the films exhibit a superconducting phase below 90 K. Results of x‐ray microanalysis and x‐ray photoelectron spectroscopy confirm that the Al buffer forms an Al2O3 layer and prevents precipitation of Cu at the film/substrate interface.
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68.35.Fx Diffusion; interface formation
68.35.Gy Mechanical properties; surface strains
74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates

Time‐resolved emission spectroscopy of the high Tc superconductor YBa2Cu3O7−x under laser ablation

K. M. Yoo, R. R. Alfano, Xiaoming Guo, M. P. Sarachik, and L. L. Isaacs

Appl. Phys. Lett. 54, 1278 (1989); http://dx.doi.org/10.1063/1.101490 (2 pages) | Cited 11 times

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Time‐resolved luminescence spectroscopy is described for high Tc YBa2Cu3O7−x under 8 ps/530 nm laser ablation. The emission spectrum covered most of the visible spectrum and showed emission lines from ions. The emission profiles in time consist of fast (≊25 ps) and slow (≊1 ns) decay components.
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74.25.N- Response to electromagnetic fields
78.47.-p Spectroscopy of solid state dynamics
74.70.-b Superconducting materials other than cuprates
79.20.Ds Laser-beam impact phenomena
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