Transverse‐mode‐stabilized ridge stripe AlGaInP semiconductor lasers incorporating a thin GaAs etch‐stop layer

Tanaka, T.; Minagawa, S.; Kajimura, T.

doi:doi:10.1063/1.100676

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Applied Physics Letters / Volume 54 / Issue 15

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Appl. Phys. Lett. 54, 1391 (1989); doi:10.1063/1.100676 (3 pages)

Transverse‐mode‐stabilized ridge stripe AlGaInP semiconductor lasers incorporating a thin GaAs etch‐stop layer

T. Tanaka, S. Minagawa, and T. Kajimura

Central Research Laboratory Hitachi, Ltd., 1‐280 Higashikoigakubo, Kokubunji‐shi, Tokyo 185, Japan

(Received 19 December 1988; accepted 30 January 1989)

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Transverse‐mode‐stabilized ridge stripe AlGaInP semiconductor lasers fabricated using a thin GaAs layer as an etch stop are reproducibly realized. The ridge stripe structure is fabricated utilizing the large difference in etching rates between GaAs/AlGaAs and AlGaInP layers. As a result, the thickness control of the cladding layer adjacent to light absorbing layers is significantly improved. Results show that the GaAs layer is effective as an etch‐stop layer even if the thickness is only 1–2 nm. The total internal loss of the lasers is estimated to be about 20 cm⁻¹ and loss due to the insertion of the GaAs layer is almost negligible. A threshold current of about 50 mA and a stable fundamental transverse mode up to an output power of about 10 mW is attained at room temperature under cw operation. Similar results were obtained when an AlGaAs layer was used instead of GaAs.