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Applied Physics Letters / Volume 54 / Issue 15

Appl. Phys. Lett. 54, 1397 (1989); doi:10.1063/1.100678 (3 pages)

High‐efficiency, continuous‐wave, epitaxial surface‐emitting laser with pseudomorphic InGaAs quantum wells

P. L. Gourley, S. K. Lyo, and L. R. Dawson

Sandia National Laboratories, Albuquerque, New Mexico 87185

(Received 19 December 1988; accepted 30 January 1989)

We report the first continuous‐wave (cw) photopumped operation of surface‐emitting lasers comprising pseudomorphic InGaAs quantum wells. The lasers were grown by molecular beam epitaxy and incorporate epitaxial quarter‐wave AlAs/GaAs mirrors surrounding an active region. In the active region, 50 Å InGaAs quantum wells are distributed with half‐wave periodicity to center on cavity standing wave maxima. Lasing is observed from 78 to 250 K in the spectral range 920–950 nm, where the GaAs substrate is transparent. Thresholds were as low as 1.5×104 W/cm2, and overall (differential) output power efficiency was as high as 35% (85%) with up to 60 mW in a low divergence beam. Both periodic gain and biaxial compressive layer strain contribute to the reduced lasing threshold. The laser gain length is only 550 Å (11 quantum wells). The possibility of surface‐emitting lasing in single quantum wells is discussed.

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KEYWORDS and PACS

Keywords

QUANTUM WELL STRUCTURES, SEMICONDUCTOR LASERS, OPERATION, STIMULATED EMISSION, INDIUM ARSENIDES, GALLIUM ARSENIDES, LOW TEMPERATURE, THRESHOLD ENERGY, POWER, EFFICIENCY, EXPERIMENTAL DATA, LASER MIRRORS, GAIN, MOLECULAR BEAM EPITAXY, FABRICATION, NEAR INFRARED RADIATION

PACS

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 42.60.Da

    Resonators, cavities, amplifiers, arrays, and rings

  • 78.45.+h

    Stimulated emission

ARTICLE DATA

Permalink
http://link.aip.org/link/doi/10.1063/1.100678

PUBLICATION DATA

ISSN:

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    P. L. Gourley, T. M. Brennan, B. E. Hammons, S. W. Corzine, R. S. Geels, R. H. Yan, J. W. Scott, and L. A. Coldren, Appl. Phys. Lett. 54, 1209 (1989APPLAB000054000013001209000001).

    P. L. Gourley, I. J. Fritz, and L. R. Dawson, Appl. Phys. Lett. 52, 377 (1988APPLAB000052000005000377000001).

    J. Y. Tsao and B. W. Dodson, Appl. Phys. Lett. 53, 848 (1988APPLAB000053000010000848000001).

    P. L. Gourley and L. R. Dawson, J. Appl. Phys. 65, 380 (1989JAPIAU000065000001000380000001).

    I. J. Fritz, T. J. Drummond, G. C. Osbourn, J. E. Schirber, and E. D. Jones, Appl. Phys. Lett. 48, 1678 (1986APPLAB000048000024001678000001).

    E. D. Jones, S. K. Lyo, and J. F. Klem, Phys. Rev. Lett. 61, 2265 (1988).

    M. Ogura, W. Hsin, M. Wu, S. Wang, J. R. Whinnery, S. C. Wang, and J. J. Yang, Appl. Phys. Lett. 51, 1655 (1987APPLAB000051000021001655000001).


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