Determination of the local Al concentration in AlxGa1−xAs‐GaAs quantum well structures using the (200) diffraction intensity obtained with a 10 Å electron beam

Ou, H.‐J.; Tsen, S.‐C. Y.; Tsen, K. T.; Cowley, J. M.; Chyi, J. I.; Salvador, A.; Morkoç, H.

doi:doi:10.1063/1.100695

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Applied Physics Letters / Volume 54 / Issue 15

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Appl. Phys. Lett. 54, 1454 (1989); http://dx.doi.org/10.1063/1.100695 (3 pages)

Determination of the local Al concentration in Al_xGa_1−xAs‐GaAs quantum well structures using the (200) diffraction intensity obtained with a 10 Å electron beam

H.‐J. Ou¹, S.‐C. Y. Tsen¹, K. T. Tsen¹, J. M. Cowley¹, J. I. Chyi², A. Salvador², and H. Morkoç²

¹Department of Physics, Arizona State University, Tempe, Arizona 85287
²Coordinated Science Laboratory, University of Illinois, 1101 West Springfield Avenue, Urbana, Illinois 61801

(Received 12 December 1988; accepted 13 February 1989)

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Abstract

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Related Content

A novel method for determining the local concentration of Al in the Al_xGa_1−xAs layer of Al_xGa_1−xAs‐GaAs multiple quantum well structures is reported. By scanning a 10 Å electron beam across the interface, the (200) dark‐field scanning transmission electron microscopy (STEM) image shows the contrast of the Al_xGa_1−xAs‐GaAs multilayer since the intensity of the (200) diffraction is sensitive to the Al concentration. The line scan intensity profile of the (200) diffraction, along a uniform specimen region of known thickness, shows the intensity variation of the (200) diffraction and reflects the local content of Al in each region. The simulation of the nanodiffraction patterns produces a chart of the (200) diffraction intensity versus the Al concentration for the determination of the local change of the Al concentration. A molecular beam epitaxy grown Al_xGa_1−xAs‐GaAs specimen (x=0.57 as determined from Raman spectroscopy) is tested and the dark‐field STEM studies show two thin layers of x=0.46 at the 1/3 and 2/3 height level within every Al_xGa_1−xAs layer.

KEYWORDS and PACS

Keywords

QUANTUM WELL STRUCTURES, MULTILAYERS, IMPURITIES, CRYSTAL STRUCTURE, MOLECULAR BEAM EPITAXY, CHEMICAL COMPOSITION, THIN FILMS, SUPERLATTICES, TRANSMISSION ELECTRON MICROSCOPY, ALUMINIUM ARSENIDES, GALLIUM ARSENIDES, ELECTRON DIFFRACTION, RAMAN SPECTROSCOPY

PACS

68.65.-k

Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
07.79.Cz

Scanning tunneling microscopes
61.05.-a

Techniques for structure determination
81.15.Hi

Molecular, atomic, ion, and chemical beam epitaxy
61.72.sd

Impurity concentration
61.72.sh

Impurity distribution
61.72.sm

Impurity gradients