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17 Apr 1989

Volume 54, Issue 16, pp. 1489-1598

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Synchronous and noncollinear infrared upconversion in AgGaS2

G. C. Bhar, S. Das, U. Chatterjee, R. S. Feigelson, and R. K. Route

Appl. Phys. Lett. 54, 1489 (1989); http://dx.doi.org/10.1063/1.101410 (3 pages) | Cited 3 times

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Synchronous noncollinear upconversion detection is reported for the first time with a Nd:YAG laser in AgGaS2. Q‐switched pump laser pulses with a repetition rate up to 50 Hz were synchronized with intracavity chopped continuous wave CO2 laser pulses. Results were obtained both by tuning the CO2 laser and by varying the angle between the laser beams.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Fc Modulation, tuning, and mode locking
42.79.Ls Scanners, image intensifiers, and image converters
42.79.Pw Imaging detectors and sensors
42.70.-a Optical materials

Optimization and fabrication of grating beamsplitters in silicon nitride

M. R. Taghizadeh, J. I. B. Wilson, J. Turunen, A. Vasara, and J. Westerholm

Appl. Phys. Lett. 54, 1492 (1989); http://dx.doi.org/10.1063/1.101331 (3 pages) | Cited 13 times

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We report for the first time the generation of optimized space‐invariant fan‐out elements, so‐called Dammann gratings [H. Dammann and K. Görtler, Opt. Commun. 3, 312 (1971)] in plasma silicon nitride. Diffraction efficiencies as high as 65% have been achieved. Using simulated annealing and the greedy algorithm, grating structures with fan‐out as large as 201×201 can readily be calculated. Low absorption and high optical quality together with its ease of structuring make silicon nitride an ideal medium for the construction of phase‐only optical elements.
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42.79.Dj Gratings
42.79.Hp Optical processors, correlators, and modulators
42.30.Va Image forming and processing
42.40.Kw Holographic interferometry; other holographic techniques

Quantum size effects and observation of microcrystallites in colored filter glasses

T. Yanagawa, Y. Sasaki, and H. Nakano

Appl. Phys. Lett. 54, 1495 (1989); http://dx.doi.org/10.1063/1.101332 (3 pages) | Cited 9 times

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The CdSxSe1−x microcrystallites contained in colored filter glasses have been considered to be spherical. This letter demonstrates that in fact they are hexagonal columns, implying a wurtzite structure. Microcrystallite grain growth is observed in real time using an electron beam annealing method. Each grain is confirmed by energy dispersive spectrometry to be CdSxSe1−x. The grain size difference produces different optical transmission spectra due to quantum size effects. On the optical transmission spectrum of a sample with grains of 30 Å, a new absorption band appears. This band can be explained by size quantization of the valence band.
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61.72.Mm Grain and twin boundaries
78.40.Ha Other nonmetallic inorganics
81.40.Tv Optical and dielectric properties related to treatment conditions
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Radiation to coherent light converter

C. L. Wang, N. Bar‐Chaim, K. Y. Lau, B. R. Marshall, M. C. Thomas, and P. A. Zagarino

Appl. Phys. Lett. 54, 1498 (1989); http://dx.doi.org/10.1063/1.101333 (3 pages)

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We have developed a radiation to coherent light converter with a monolithically integrated semiconductor chip that consists of a chromium‐doped GaAs photoconductor detector and a GaAlAs laser diode. When irradiated, the electric pulse generated by the photoconductor detector modulates the laser diode, which has been biased above the lasing threshold, thus converting a radiation pulse to an electric pulse and then to a light pulse. The laser pulse is then transmitted to a fast recorder through a high bandwidth optical fiber. In the absence of a single‐step x‐ray pumped laser, our converter appears to be the first integrated device that can efficiently convert x‐ray flux into coherent light. This device has been tested successfully with the 50 ps electron beams of 17 MeV linear accelerator and with 50 ns x‐ray pulses from a Z‐pinch plasma source.
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42.79.Ls Scanners, image intensifiers, and image converters
42.79.Pw Imaging detectors and sensors
07.85.-m X- and γ-ray instruments
42.82.-m Integrated optics
85.60.Gz Photodetectors (including infrared and CCD detectors)

Design of guided‐wave components using growth of GaAs/AlGaAs superlattices on patterned substrates by organometallic chemical vapor deposition

E. Colas, A. Yi‐Yan, R. Bhat, M. Seto, and R. J. Deri

Appl. Phys. Lett. 54, 1501 (1989); http://dx.doi.org/10.1063/1.101334 (3 pages) | Cited 5 times

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We demonstrate how an adequate choice of growth conditions and GaAs/AlGaAs superlattice series leads to a desired refractive index profile and to confinement of light at the cusp of a planarized structure over a previously photolithographically etched groove. Waveguiding at 1.52 μm wavelength with measured propagation losses of 1.5 dB/cm was obtained in these structures. The effect of growth parameters is discussed and potential applications of this concept to other structures suitable for guided‐wave devices are proposed.
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42.79.Gn Optical waveguides and couplers
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Practical quantitative theory of photoacoustic pulse generation

F. Alan McDonald

Appl. Phys. Lett. 54, 1504 (1989); http://dx.doi.org/10.1063/1.101335 (3 pages) | Cited 22 times

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The problem of photoacoustic pulse generation is treated using generalized thermoelastic equations, specifically incorporating the hyperbolic heat conduction equation to avoid an infinite thermal propagation velocity. The assumption of equality of longitudinal and thermal velocities leads to a simplification of the solution in certain limiting cases, enabling insights into the character of the solution, without appreciably affecting the numerical results. The effect(s) of approximations made by previous authors may also be assessed. Numerical Hankel–Laplace transform inversion is shown to be practical for the general case, allowing such calculations to be duplicated by others.
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43.35.Ud Thermoacoustics, high temperature acoustics, photoacoustic effect

Mass spectroscopic investigation of the CH3 radicals in a methane rf discharge

H. Toyoda, H. Kojima, and H. Sugai

Appl. Phys. Lett. 54, 1507 (1989); http://dx.doi.org/10.1063/1.101336 (3 pages) | Cited 81 times

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Neutral CH3 radicals in a capacitively coupled rf discharge in methane have been detected with a quadrupole mass spectrometer utilizing a threshold ionization technique. The absolute density of CH3 radicals was measured at pressures from 0.5 to 20 mTorr, together with the ionic composition of the methane plasma. The principal ionic species were CH+5 and C2H+5 , except in the low‐pressure region, suggesting the importance of ion‐molecule reactions in the plasma. The lifetime of CH3 radicals in the afterglow of pulsed rf discharges was measured and explained in terms of the recombination reaction CH3 +CH3 →C2 H6.
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52.80.Pi High-frequency and RF discharges
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
81.15.Rs Spray coating techniques
82.30.Fi Ion-molecule, ion-ion, and charge-transfer reactions

Oxide formation during plasma etching of silicon‐containing resists

M. A. Hartney, J. N. Chiang, D. W. Hess, and D. S. Soane

Appl. Phys. Lett. 54, 1510 (1989); http://dx.doi.org/10.1063/1.101337 (3 pages) | Cited 7 times

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Surface modification during oxygen plasma etching of polysilylmethylstyrene resists has been monitored using x‐ray photoelectron spectroscopy. Plasma exposure converted the silicon present in the polymers to an oxidized surface region which prevented further chemical etching. Conversion was more rapid and more complete when etching under conditions where higher energy ion bombardment occurred. Polysilylmethylstyrene reached a steady‐state oxide thickness between 3.4 and 5.8 nm, depending on etching conditions. A copolymer of this material with chloromethylstyrene showed a comparable thickness when etched at high ion energies, but did not reach a steady state when etched at conditions where the average ion energy was below 110 eV.
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81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
85.40.Hp Lithography, masks and pattern transfer
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.55.-a Thin film structure and morphology

Radiation‐induced interface phenomena: Decoration of high‐energy density ion tracks

P. Anders Ingemarsson, Bo U. R. Sundqvist, C. W. Nieh, and Thomas A. Tombrello

Appl. Phys. Lett. 54, 1513 (1989); http://dx.doi.org/10.1063/1.101383 (3 pages) | Cited 1 time

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The effect of 20 MeV Cl4+ ions incident on Au‐SiO2 and Ag‐SiO2 interfaces was investigated using high‐resolution transmission electron microscopy. Cross‐sectional micrographs expose beam‐induced gold interfacial transport and migration into the SiO2. No such migration was observed for silver films. The relevance of this phenomenon to the adhesion improvement found at corresponding irradiation doses is discussed.
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68.35.Fx Diffusion; interface formation
68.35.Gy Mechanical properties; surface strains
66.30.J- Diffusion of impurities
68.60.Bs Mechanical and acoustical properties

Plastic flow during thermal oxidation of silicon

C. S. Rafferty, L. Borucki, and R. W. Dutton

Appl. Phys. Lett. 54, 1516 (1989); http://dx.doi.org/10.1063/1.101384 (3 pages) | Cited 18 times

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Is silicon dioxide a viscous liquid or an elastic solid at silicon processing temperatures? Simple calculations using either assumption lead to gross discrepancies with experimental observations. This letter shows that a plastic flow model resolves these discrepancies. Flow develops much sooner than predicted by a linear viscoelastic model. Large deformations (<5%) are accommodated almost entirely by plastic flow. Small deformations are accommodated either elastically or by plastic flow depending on temperature.
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81.65.-b Surface treatments
85.40.Hp Lithography, masks and pattern transfer
68.60.Bs Mechanical and acoustical properties
62.20.F- Deformation and plasticity

Low‐temperature processing of titanium nitride films by laser physical vapor deposition

N. Biunno, J. Narayan, S. K. Hofmeister, A. R. Srivatsa, and R. K. Singh

Appl. Phys. Lett. 54, 1519 (1989); http://dx.doi.org/10.1063/1.101338 (3 pages) | Cited 29 times

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We have investigated the formation of polycrystalline TiN films on (100) Si substrates using a low‐temperature laser processing method. The films were deposited by laser ablation of a TiN hot‐pressed pellet in the presence of neutral or ionized nitrogen using a XeCl excimer laser (wavelength 308 nm, pulse duration 45×10−9 s, and energy density of 4–5 J cm−2). The substrate temperature ranged from 25 to 550 °C. Plan‐view and cross‐section transmission electron microscopy studies show that the films are polycrystalline (average grain size ∼100 Å) with face‐centered‐cubic structure and lattice constant of 4.25 Å. It is interesting to note that the average grain size remained approximately constant with substrate temperature up to 550 °C. Chemical composition was analyzed by Rutherford backscattering and Auger electron spectroscopy as a function of film depth. The results show that the films reproduced closely the chemical composition of the TiN target which contained some oxygen, and that the oxygen content decreased with increased substrate temperature. Four‐point probe measurements and I‐V characteristics show that the films are metallic with a typical resistivity of ∼150 μΩ cm. The microhardness values of these films were found to be as high as 17 GPa.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.Nq Composition and phase identification
73.61.At Metal and metallic alloys
68.60.Bs Mechanical and acoustical properties

Photoluminescence enhancement in post‐growth hydrogenated Ga1−xAlxAs (0≤x≤0.32) and GaAs/GaAlAs multilayer structures

L. Pavesi, F. Martelli, D. Martin, and F. K. Reinhart

Appl. Phys. Lett. 54, 1522 (1989); http://dx.doi.org/10.1063/1.101339 (3 pages) | Cited 30 times

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Low‐temperature photoluminescence measurements in undoped Ga1−xAlxAs (0≤x≤0.32) and GaAs/GaAlAs quantum structures grown by molecular beam epitaxy are performed before and after hydrogen plasma exposure. In both cases we observe a strong enhancement of the luminescence after the exposure. In the GaAlAs epilayers this enhancement clearly depends on the Al concentration in the alloy. The results are explained in terms of passivation of nonradiative traps in the GaAlAs that increases the carriers’ lifetime and diffusion length allowing, in the case of the multilayers, a greater number of carriers to recombine in the quantum well.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors

Determination of generation lifetime in intrinsic polycrystalline silicon

P. K. Hurley, S. Taylor, W. Eccleston, and D. Meakin

Appl. Phys. Lett. 54, 1525 (1989); http://dx.doi.org/10.1063/1.101340 (3 pages) | Cited 2 times

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A simple two‐terminal method is described for the determination of generation lifetime in intrinsic polycrystalline silicon suitable for thin‐film transistor applications using a metal/SiO2 /polycrystalline silicon/n‐type silicon test structure. The method consists of monitoring the high‐frequency capacitance of the test structure after the application of a voltage pulse of the correct polarity to cause deep depletion in the n‐type substrate. Generation lifetimes of 34 ps to 19 ns are obtained for polycrystalline silicon films of varying grain size.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.De Semiconductor-device characterization, design, and modeling

Silicide/silicon Schottky barriers under hydrostatic pressure

Jürgen H. Werner

Appl. Phys. Lett. 54, 1528 (1989); http://dx.doi.org/10.1063/1.101385 (3 pages) | Cited 12 times

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We investigate several silicide/silicon Schottky barrier heights under hydrostatic pressures up to 10 kbar. The barriers of polycrystalline TiSi2, PtSi, and WTi on n‐type Si decrease with −1.l3, −1.35, and −1.42 meV/kbar, respectively. The coefficients for A‐ and B‐type NiSi2/Si amount to −0.77 and −0.89 meV/kbar and are too small to support models which ascribe the l40 meV barrier difference of these two types to different interface bond lengths. The pressure coefficients are, on the other hand, within a range of predictions of Cardona and Christensen which are based on pure bulk properties.
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73.30.+y Surface double layers, Schottky barriers, and work functions
81.40.Rs Electrical and magnetic properties related to treatment conditions
73.40.Ns Metal-nonmetal contacts

Mass and energy dependence of depth resolution in secondary‐ion mass spectrometry experiments with iodine, oxygen, and cesium beams on AlGaAs/GaAs multilayer structures

M. Meuris, W. Vandervorst, P. De Bisschop, and D. Avau

Appl. Phys. Lett. 54, 1531 (1989); http://dx.doi.org/10.1063/1.101341 (3 pages) | Cited 16 times

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The use of an I+2 and I+ primary ion beam in secondary‐ion mass spectrometry measurements was studied to investigate its depth profiling properties. A comparison with the results of a Cs+, O+2, and O+ primary beam was made. Experiments were performed with low impact energy (down to 1.7 keV) and glancing angle of incidence on molecular beam epitaxy AlGaAs‐GaAs multilayer structures. The best obtainable decay length of the Al+ signal with an iodine primary beam is 1.1 nm. At low impact energies, no mass dependence on the depth resolution is observed. In these conditions, a useful yield for Al+ of approximately 5×10−5 was obtained with the Cs+ beam and 10−2 with the iodine and oxygen beams.
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68.35.Dv Composition, segregation; defects and impurities
61.80.Jh Ion radiation effects
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Indirect trench sidewall doping by implantation of reflected ions

Genshu Fuse, Hisashi Ogawa, Kayoko Tamura, Yasushi Naito, and Hiroshi Iwasaki

Appl. Phys. Lett. 54, 1534 (1989); http://dx.doi.org/10.1063/1.101342 (3 pages) | Cited 1 time

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Ion implantation (i/i) technology is employed for silicon trench sidewall doping. The aspect ratio of trenches for high Mbit DRAM is very large (depth/width≥10), so that very small glancing‐angle i/i to sidewalls is necessary. In this case, reflected ions are large in number and are implanted to the opposite sidewall. It is very important to know the elemental depth profile in the opposite sidewall to understand the implantation mechanism. For the first time, we measured the depth profiles at several positions of the opposite trench sidewall by secondary‐ion mass spectroscopy for arsenic and boron ion implantations. It is found that reflected ions are distributed near the facing region of the directly implanted region with smaller energies than the primary energy. These findings are compared with the simulations based on the marlowe program.
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61.72.uf Ge and Si
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
61.80.Jh Ion radiation effects
81.65.-b Surface treatments

Amorphous silicon solar cells with ethylene‐based p+ layers

S. Wiedeman, M. Smoot, and B. Fieselmann

Appl. Phys. Lett. 54, 1537 (1989); http://dx.doi.org/10.1063/1.101343 (3 pages) | Cited 3 times

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The use of ethylene (C2H4) rather than methane (CH4) as the source of carbon in the hydrogenated amorphous silicon carbide (a‐SiC:H) p+ layer of hydrogenated amorphous silicon (a‐Si:H) based solar cells deposited in a glow discharge has been explored. Device results are presented to demonstrate the utility of ethylene‐based a‐SiC:H for use in the p+ layer. Device results and material measurements reveal that the use of ethylene under the proper conditions can yield p+ a‐SiC:H which has optical and transport properties which are at least as suitable as methane‐based material.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
85.30.De Semiconductor-device characterization, design, and modeling
72.80.Ng Disordered solids

Interaction of Be and O in GaAs

A. E. Von Neida, S. J. Pearton, W. S. Hobson, and C. R. Abernathy

Appl. Phys. Lett. 54, 1540 (1989); http://dx.doi.org/10.1063/1.101344 (3 pages) | Cited 20 times

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Oxygen implanted at a concentration above that of the acceptors in p‐type GaAs is shown to create thermally stable, high‐resistivity material only in the case of Be doping in the GaAs. The effect is not seen for Mg, Zn, or Cd doping. Similarly, there is no apparent interaction of O with n‐type dopants (S or Si) in our measurements. The Be‐O complex in p‐type GaAs is a deep donor, creating material whose sheet resistivity shows an apparent thermal activation energy of 0.59 eV for a structure involving a thin layer (5000 Å) of oxygen compensated, Be‐doped GaAs on a semi‐insulating substrate.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.60.Dv Thermal stability; thermal effects
73.61.Ey III-V semiconductors
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Study of planarization of cobalt silicide lines and silicon surfaces by scanning force microscopy and scanning electron microscopy

K.‐H. Robrock, K. N. Tu, D. W. Abraham, and J. B. Clabes

Appl. Phys. Lett. 54, 1543 (1989); http://dx.doi.org/10.1063/1.101386 (3 pages) | Cited 2 times

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Fine lines of 1.5‐μm‐wide and 80‐nm‐thick Co were patterned by a lithographic technique and deposited by electron gun onto (100) Si surfaces. Reacting the Co and Si to form CoSi2 lines was carried out at 600 °C in He atmosphere. The composite surface consisting of alternating silicides and Si as seen by scanning electron microscopy showed qualitatively that the silicide lines have sunk completely into the Si and the entire surface appears planar. Quantitative changes in vertical direction before and after the formation of the silicide lines have been measured by atomic force microscopy.
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81.65.-b Surface treatments
85.40.Hp Lithography, masks and pattern transfer
68.35.B- Structure of clean surfaces (and surface reconstruction)
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Photoluminescence from carriers confined at a GaxIn1−xAs‐InP single heterojunction interface

P. W. Yu, C. K. Peng, and H. Morkoç

Appl. Phys. Lett. 54, 1546 (1989); http://dx.doi.org/10.1063/1.101325 (3 pages) | Cited 4 times

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The low‐temperature properties of the interface photoluminescence emission in GaxIn1−xAs‐InP single heterojunctions grown by molecular beam epitaxy are investigated with changes of temperature and excitation intensity at different depths across the interface. The emission energy shifts to higher energy with increasing excitation intensity and lies between the three‐dimensional GaxIn1−xAs‐InP near‐band‐edge exciton and the quasi‐donor–acceptor pair transition. The new emission is attributed to the interface exciton which is indirect in real space.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Room‐temperature two‐dimension exciton exchange and blue shift of absorption edge in GaAs/AlGaAs superlattices under an electric field

R. H. Yan, R. J. Simes, H. Ribot, L. A. Coldren, and A. C. Gossard

Appl. Phys. Lett. 54, 1549 (1989); http://dx.doi.org/10.1063/1.101326 (3 pages) | Cited 18 times

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The first room‐temperature two‐dimensional heavy hole exciton red shift, greater than 25 meV due to the exchange of Van Hove‐type M1 and quantum well excitons, was observed by photocurrent measurements in molecular beam epitaxy grown superlattices with periods of 30 Å GaAs/25 Å Ga0.5Al0.5As. At a photon energy of 1.66 eV, a 3000 cm−1 absorption change due to the blue shift of the superlattice absorption edge was also observed at room temperature in superlattices with periods of 20 Å GaAs/20 Å Ga0.5Al0.5As.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.20.Jq Electro-optical effects
73.61.Ey III-V semiconductors
71.35.-y Excitons and related phenomena

Impact of sidewall recombination on the quantum efficiency of dry etched InGaAs/InP semiconductor wires

B. E. Maile, A. Forchel, R. Germann, and D. Grützmacher

Appl. Phys. Lett. 54, 1552 (1989); http://dx.doi.org/10.1063/1.101327 (3 pages) | Cited 39 times

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We have investigated the lateral width (Lx) dependence of the quantum efficiency of the excitonic recombination in etched InGaAs/InP wires (40 nm≤Lx≤5 μm). The analysis of data obtained at different temperatures implies that the intensity decay observed for narrow wires is due to the formation of an optically inactive (‘‘dead’’) layer and due to surface recombination.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors
81.65.-b Surface treatments
71.35.-y Excitons and related phenomena

Application of position sensitive atom probe to the study of the microchemistry and morphology of quantum well interfaces

J. A. Liddle, A. G. Norman, A. Cerezo, and C. R. M. Grovenor

Appl. Phys. Lett. 54, 1555 (1989); http://dx.doi.org/10.1063/1.101328 (3 pages) | Cited 7 times

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The morphology and microchemistry of interfaces in GaInAs/InP quantum well structures have been studied with extremely high resolution by the new technique of position sensitive atom probe microanalysis. This letter presents some preliminary results demonstrating the power of the technique in determining the structure and chemistry of individual interfaces in multilayer epitaxial semiconductor samples.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.35.B- Structure of clean surfaces (and surface reconstruction)
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)

Excess carrier lifetimes in the silicon doping superlattice

G. A. Leith, S. Zukotynski, D. Landheer, M. W. Denhoff, and M. Buchanan

Appl. Phys. Lett. 54, 1558 (1989); http://dx.doi.org/10.1063/1.101312 (3 pages) | Cited 2 times

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The excess carrier lifetimes in a silicon doping superlattice were investigated by measuring the decay of both the photovoltage and the photoconductance. The photovoltage decayed exponentially with a time constant of 1 s at liquid‐nitrogen temperature. In addition, persistent photoconductivity extending over many hours was observed in the n‐type layers.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.50.Pz Photoconduction and photovoltaic effects
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Hydrogen passivation effect in Si molecular beam epitaxy

Hiroyuki Hirayama and Toru Tatsumi

Appl. Phys. Lett. 54, 1561 (1989); http://dx.doi.org/10.1063/1.101313 (3 pages) | Cited 26 times

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Hydrogen passivation of the clean Si(100) surface to prevent growth of native oxides after air exposure was studied by supplying atomic hydrogen at several temperatures between room temperature and 650 °C. Atomic hydrogen was generated with high efficiency by the electron cyclotron resonance plasma cell of the gas source Si molecular beam epitaxy apparatus. The passivation effect was examined by observing the oxygen KLL Auger peak height of the passivated wafer after 12 h air exposure. The wafer supplied with atomic hydrogen at temperatures below 400 °C showed an obvious passivation effect, while the wafer supplied with hydrogen at temperatures above 400 °C showed no passivation effects. The solid source Si MBE growth was done on these hydrogen‐passivated and 12 h air‐exposed wafers at the growth temperature of 600 °C without any initial surface cleaning process. A good crystal quality film which showed a sharp 2×1 reflection high‐energy electron diffraction pattern was obtained on the wafer supplied with hydrogen at temperature below 400 °C.
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81.65.-b Surface treatments
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
68.55.-a Thin film structure and morphology
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