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24 Apr 1989

Volume 54, Issue 17, pp. 1607-1705

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Electrical properties of hydrogenated amorphous silicon layers on a polymer film substrate under tensile stress

K. Nakatani, M. Ogasawara, K. Suzuki, H. Okaniwa, K. Hamamoto, and H. Ozaki

Appl. Phys. Lett. 54, 1678 (1989); http://dx.doi.org/10.1063/1.101431 (3 pages)

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The electrical properties of hydrogenated amorphous silicon (a‐Si:H) layers on a polyethylene terephthalate (PET) film were studied under tensile stress. As the a‐Si:H layers were stretched about 1.5%, dark conductivity and photoconductivity decreased gradually at first and then steeply beyond a critical strain. It was found that the former behavior was caused by a piezoresistance effect and the latter was attributed to breaking weak SiSi bonds, as shown by an increase of the electron spin resonance (ESR) intensity of Si dangling bonds. These changes of conductivity and ESR signal intensity were almost completely restored by annealing the a‐Si:H layer at 150 °C for 1 h while relaxed.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.50.Pz Photoconduction and photovoltaic effects
68.60.Bs Mechanical and acoustical properties

Γ to X transport of photoexcited electrons in type II GaAs/AlAs multiple quantum well structures

P. Saeta, J. F. Federici, R. J. Fischer, B. I. Greene, L. Pfeiffer, R. C. Spitzer, and B. A. Wilson

Appl. Phys. Lett. 54, 1681 (1989); http://dx.doi.org/10.1063/1.101302 (3 pages) | Cited 38 times

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We report novel femtosecond time‐resolved measurements performed on staggered type II GaAs/AlAs multiple quantum well structures. Photoexcited electrons were determined to transfer from the Γ valley of the GaAs layers to the X valleys of the AlAs in 100 and 400 fs for 8‐ and 11‐monolayer‐thick GaAs samples, respectively.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.50.-h Electronic transport phenomena in thin films
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors

Shallow, silicided p+/n junction formation and dopant diffusion in SiO2/TiSi2/Si structure

Y. H. Ku, S. K. Lee, D. L. Kwong, and P. Chu

Appl. Phys. Lett. 54, 1684 (1989); http://dx.doi.org/10.1063/1.101432 (3 pages) | Cited 6 times

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Shallow silicided p+/n junctions have been formed by implanting boron ions into titanium disilicide layers and the subsequent drive‐in of the implanted boron into the Si substrate by rapid thermal annealing (RTA). Results of boron diffusion in titanium disilicide layer, its segregation at both silicide/Si and oxide/silicide interfaces, and the junction quality are presented. The precipitation of boron at the SiO2/TiSi2 interface is identified for the first time in the form of B2O3. p+/n diodes and short‐channel metal‐oxide‐semiconductor field‐effect transistors with good electrical characteristics have been fabricated using doped silicide technology.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
85.30.Tv Field effect devices
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
66.30.J- Diffusion of impurities

Heteroepitaxial growth and characterization of GaAs on silicon‐on‐sapphire and sapphire substrates

T. P. Humphreys, C. J. Miner, J. B. Posthill, K. Das, M. K. Summerville, R. J. Nemanich, C. A. Sukow, and N. R. Parikh

Appl. Phys. Lett. 54, 1687 (1989); http://dx.doi.org/10.1063/1.101303 (3 pages) | Cited 11 times

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A comparative study pertaining to the molecular beam epitaxial growth of GaAs directly on silicon‐on‐sapphire and (1012) sapphire substrates has been made. Thermal strain is significantly reduced in these heteroepitaxial GaAs films as compared with GaAs on silicon; however, the (111) GaAs epitaxy on nominal (1012) sapphire contains double‐position boundaries. Hall effect measurements and current‐voltage characteristics from metal‐semiconductor contacts show that GaAs grown on silicon‐on‐sapphire is superior to GaAs grown on (1012) sapphire under the experimental conditions employed.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.60.Bs Mechanical and acoustical properties
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.61.Ey III-V semiconductors

Spontaneous growth of coherent tilted superlattice on vicinal (100) GaAs substrates

M. Tsuchiya, P. M. Petroff, and L. A. Coldren

Appl. Phys. Lett. 54, 1690 (1989); http://dx.doi.org/10.1063/1.101304 (3 pages) | Cited 57 times

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Periodic Al composition modulations have been observed to occur spontaneously during molecular beam epitaxy of AlGaAs on vicinal (100) substrates. The formation of the spontaneous Al modulation requires (a) the migration‐enhanced epitaxy deposition and (b) one monolayer deposition of Al and Ga atoms per cycle, hence, the denomination of coherent tilted superlattice (C‐TSL). Cross‐sectional transmission electron microscopy clearly shows that the C‐TSL has the periodicity of the surface steps. We also show that the Al‐rich regions of the C‐TSL form at the bottom of steps before the As flux is established. These results indicate that growth kinetics dominates the C‐TSL formation.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Nq Composition and phase identification
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Thermal stability of tungsten ohmic contacts to the graded‐gap InGaAs/GaAs/AlGaAs heterostructure

Alex Lahav, F. Ren, and R. F. Kopf

Appl. Phys. Lett. 54, 1693 (1989); http://dx.doi.org/10.1063/1.101305 (3 pages) | Cited 9 times

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Nonalloyed tungsten ohmic contacts to the Inx Ga1−x As/GaAs/Aly Ga1−y As (x=0.4, y=0.25) graded‐gap heterostructure showed excellent surface morphology after annealing of up to 1000 °C for 10 s. The minimum value for the specific contact resistance (1.3×10−6 Ω cm2 ) was obtained following annealing at 600 °C for 10 s. The increase in contact resistivity at higher temperatures was related to the increase in the heterostructure sheet resistance due to layer intermixing and In and Ga outdiffusion. The W/InGaAs graded‐gap refractory ohmic contact can be used as a self‐aligned emitter in heterojunction bipolar transistors.
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73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts
85.30.Pq Bipolar transistors
68.35.Fx Diffusion; interface formation

Enhanced Schottky barriers produced by recoil implantation of Mg into n‐GaAs

M. Eizenberg, A. C. Callegari, D. K. Sadana, H. J. Hovel, and T. N. Jackson

Appl. Phys. Lett. 54, 1696 (1989); http://dx.doi.org/10.1063/1.101306 (3 pages) | Cited 9 times

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Enhancement of Schottky barrier height of Ti‐Pt‐Au on n‐type GaAs was obtained by heavily (2×1018 cm−3) counter doping the near‐surface region of the substrate. The p‐type region was produced by recoil implantation of Mg from a Mg thin film (300 Å) irradiated by a 60 keV As+ beam. The film was subsequently chemically etched. The recoil‐implanted samples showed an enhancement of 140 meV in the Schottky barrier height following rapid thermal annealing in an AsH3 furnace at 850 °C for nominal zero second.
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73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Hi Surface barrier, boundary, and point contact devices
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.40.Ns Metal-nonmetal contacts

ac losses in REBa2Cu3O7−y superconductors

Yunhui Xu, Weiyan Guan, and K. Zeibig

Appl. Phys. Lett. 54, 1699 (1989); http://dx.doi.org/10.1063/1.101433 (3 pages) | Cited 6 times

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We present the results of hysteretic ac losses of REBa2Cu3O7−y (RE=Gd, Dy, Er, Eu, Y) calculated from our magnetization data graphically at various temperatures (4.2 K≤T<Tc ) and amplitudes of sweeping field (10−4–4.7 T). We find that the relation of ac loss w versus amplitude of sweeping field Hm follows a power law: w∞Hnm, where n varies from 7 to 1 in various regions of sweeping field Hm. We find that at a fixed field amplitude Hm≫Hp (Hp is the field of full penetration), the dependence of ac losses w on temperature T follows an exponential law: w=αe−βT, which cannot be treated within a mechanism controlled by flux creep.
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74.70.-b Superconducting materials other than cuprates
74.25.Sv Critical currents
74.25.Ha Magnetic properties including vortex structures and related phenomena

Microstructure of in situ epitaxially grown superconducting Y‐Ba‐Cu‐O thin films

D. M. Hwang, T. Venkatesan, C. C. Chang, L. Nazar, X. D. Wu, A. Inam, and M. S. Hegde

Appl. Phys. Lett. 54, 1702 (1989); http://dx.doi.org/10.1063/1.101562 (3 pages) | Cited 43 times

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The microstructure of in situ epitaxially grown Y‐Ba‐Cu‐O thin films on (001) SrTiO3 substrates was studied using cross‐sectional transmission electron microscopy. The films, prepared by pulsed laser deposition at substrate holder temperature of 650 °C without post‐annealing, exhibit zero resistivity above 90 K and critical currents exceeding 106 A/cm2 at 77 K. The films are of heavily faulted single crystalline structure with the c axis approximately perpendicular to the substrate (001) surface. We suggest that, due to the fast quenching and low substrate temperature, crystalline defects and chemical fluctuations are locked into a faulted structure after each laser pulse. Despite their rather imperfect microstructure, the films are free from macroscopic grain boundaries and secondary phases and possess superb superconducting properties.
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
68.55.-a Thin film structure and morphology
74.25.-q Properties of superconductors
FREE

Erratum: Time‐resolved direct observation of Auger recombination in semiconductor‐doped glasses [Appl. Phys. Lett. 51, 1882 (1987)]

P. Roussignol, M. Kull, D. Ricard, F. de Rougemont, R. Frey, and C. Flytzanis

Appl. Phys. Lett. 54, 1705 (1989); http://dx.doi.org/10.1063/1.101382 (1 page) | Cited 2 times

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Abstract Unavailable
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42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
42.70.Ce Glasses, quartz
99.10.Cd Errata
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