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8 May 1989

Volume 54, Issue 19, pp. 1827-1937

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Wavelength and threshold current of a quantum well laser in a strong magnetic field

T. T. J. M. Berendschot, H. A. J. M. Reinen, H. J. A. Bluyssen, C. Harder, and H. P. Meier

Appl. Phys. Lett. 54, 1827 (1989); http://dx.doi.org/10.1063/1.101373 (3 pages) | Cited 7 times

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The threshold current and the wavelength of a high‐power ridge waveguide AlGaAs graded index seperate confinement heterostructure quantum well laser have been studied in strong magnetic fields up to 20 T, to simulate the complete quantum confinement of carriers in a quantum box laser. It will be shown both experimentally and theoretically that the threshold current is increased by the application of a strong magnetic field, while its temperature sensitivity is reduced. It will further be shown that at low temperatures (T<100 K) laser emission occurs via both free carrier and excitonic transitions, while at higher temperatures (T>100 K) exciton laser emission is only observed after application of a strong magnetic field, i.e., reduction of the dimensionality.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
71.35.-y Excitons and related phenomena
78.20.Ls Magneto-optical effects

Absorption saturation and photodarkening in semiconductor‐doped glasses

M. Kull, J. L. Coutaz, G. Manneberg, and V. Grivickas

Appl. Phys. Lett. 54, 1830 (1989); http://dx.doi.org/10.1063/1.101249 (3 pages) | Cited 17 times

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Transmission measurements show a large decrease of the absorption saturation in semiconductor‐doped glasses which have been exposed to intense absorbing light. A simple saturation model including nonradiative and Auger recombination and an unsaturable part of the absorption, interpreted as free‐carrier absorption, explains the observed changes.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.70.-a Optical materials
42.65.-k Nonlinear optics
42.82.-m Integrated optics

Power scaling of large‐area transverse radio frequency discharge CO2 lasers

K. M. Abramski, A. D. Colley, H. J. Baker, and D. R. Hall

Appl. Phys. Lett. 54, 1833 (1989); http://dx.doi.org/10.1063/1.101250 (3 pages) | Cited 46 times

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We report experimental results on gain medium area scaling of laser output power for large‐area, transverse rf discharge excited carbon dioxide lasers. Power extraction to 20 kW/m2 has been achieved, indicating the significant potential of this technique.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Fully adjustable optical limiter for fiber optics using nonlinear silicon films

R. Normandin and D. C. Houghton

Appl. Phys. Lett. 54, 1836 (1989); http://dx.doi.org/10.1063/1.101251 (3 pages) | Cited 2 times

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A fully adjustable self‐limiter and optical clamp in a geometry suitable for use in a fiber optics context is demonstrated. Edge‐coupled light into a silicon thin film on a doped silicon substrate lowers the refractive index of the guiding film and eventually brings it to the cutoff condition. Furthermore, by varying the amount of light incident on the nonlinear substrate and the nonlinear film waveguide, a fully adjustable limiting action is obtained. It is shown that absorption effects are not important at power levels compatible with fiber optics, making the limiter highly damage resistant.
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42.81.Wg Other fiber-optical devices
78.66.-w Optical properties of specific thin films
42.79.Gn Optical waveguides and couplers

Laser fabricated GaAs waveguiding structures

A. E. Willner, M. N. Ruberto, D. J. Blumenthal, D. V. Podlesnik, and R. M. Osgood

Appl. Phys. Lett. 54, 1839 (1989); http://dx.doi.org/10.1063/1.101252 (3 pages) | Cited 13 times

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We have applied the technique of laser‐induced etching to fabricate rib waveguides on a GaAs/AlGaAs heterostructure system. Light confinement of these guides was controlled by varying the depth of the etched trenches. Additionally, we have demonstrated directional couplers and two‐level waveguides using the in situ depth control of this single‐step process.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
81.65.-b Surface treatments
42.79.Hp Optical processors, correlators, and modulators

Fidelity of optical phase conjugation by degenerate four‐wave mixing in semiconductor glasses and ruby

S. M. Saltiel, B. Van Wonterghem, D. A. Parthenopoulos, T. E. Dutton, and P. M. Rentzepis

Appl. Phys. Lett. 54, 1842 (1989); http://dx.doi.org/10.1063/1.101253 (3 pages) | Cited 2 times

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The fidelity of phase conjugation by degenerate four‐wave mixing in ruby and semiconductor‐doped glasses has been measured by means of our own modified Twyman–Green interferometer [Opt. Lett. 14, 183 (1989)] implementing two phase conjugate mirrors. It is shown that the fidelity of phase conjugators with an OG530 color filter as the nonlinear medium reaches a value of 99%. The fidelity of ruby is also reported. Additionally the effect of the recording system on the value of the fidelity is discussed.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Ce Glasses, quartz
42.70.-a Optical materials

Measurement of relaxation resonance, damping, and nonlinear gain coefficient from the sidebands in the field spectrum of a 1.3 μm InGaAsP distributed feedback laser

R. J. Lang, H.‐P. Mayer, H. Schweizer, A. P. Mozer, P. Panknin, and W. Elsässer

Appl. Phys. Lett. 54, 1845 (1989); http://dx.doi.org/10.1063/1.101254 (3 pages) | Cited 4 times

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We calculate an expression for the fine structure in the field fluctuation spectrum of a semiconductor laser in terms of accessible device parameters. We measure the spectrum of an InGaAsP DFB laser and determine the linewidth, relaxation resonance, and damping versus current. From the relation between damping and current, we determine the nonlinear gain coefficient.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Design considerations for diffraction coupled arrays with monolithically integrated self‐imaging cavities

J. Z. Wilcox, W. W. Simmons, D. Botez, M. Jansen, L. J. Mawst, G. Peterson, T. J. Wilcox, and J. J. Yang

Appl. Phys. Lett. 54, 1848 (1989); http://dx.doi.org/10.1063/1.101255 (3 pages) | Cited 8 times

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Conditions for stabilization of in‐phase or out‐of‐phase array eigenmodes in diffraction coupled diode laser arrays are derived and applied to several array architectures. The analysis predicts that the discrimination between these two eigenmodes is strongest in arrays with half Talbot distance long free‐propagation region. In this geometry, the out‐of‐phase and in‐phase near fields are, respectively, reproduced and channeled halfway between the original channel locations.
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42.60.By Design of specific laser systems
42.82.-m Integrated optics
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Scaling of an injection‐controlled XeF(C→A) laser pumped by a repetitively pulsed, high current density electron beam

G. J. Hirst, C. B. Dane, W. L. Wilson, R. Sauerbrey, F. K. Tittel, and W. L. Nighan

Appl. Phys. Lett. 54, 1851 (1989); http://dx.doi.org/10.1063/1.101256 (3 pages) | Cited 5 times

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This letter reports the design and performance of a scaled, injection‐controlled XeF(C→A) laser pumped by a repetitively pulsed, high current density electron beam with a temporal duration of 10 ns full width at half maximum. Injection of a 2 mJ pulse at 486.8 nm having a spectral width of <0.005 nm resulted in an amplified output of 0.7 J corresponding to energy density and efficiency values of 1.5 J/l and 1.2%.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Analysis of all‐optical integrated beam scanning devices

G. Assanto, G. I. Stegeman, and G. Vitrant

Appl. Phys. Lett. 54, 1854 (1989); http://dx.doi.org/10.1063/1.101257 (3 pages) | Cited 6 times

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We study the operation of an all‐optical, integrated, beam scanning device based on nonlinear grating coupling between radiative and guided‐wave beams. Diffusive nonlinearities are considered and the salient features are compared with previous experimental results obtained in ZnS waveguides.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Application of organometallic vapor phase epitaxy on patterned substrates for a new monolithic laser waveguide butt coupling technique

R. Azoulay, D. Remiens, L. Menigaux, and L. Dugrand

Appl. Phys. Lett. 54, 1857 (1989); http://dx.doi.org/10.1063/1.101258 (2 pages) | Cited 10 times

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An important issue in the realization of monolithic optical circuits is the coupling of laser to optical waveguides. To obtain these structures, we have studied the epitaxial growth of GaAs/GaAlAs superlattices by organometallic vapor phase epitaxy on patterned substrates, with mesa along the [011] and the [011] directions. By careful adjustments of the mesa profile and on the layer thicknesses, we have grown in a single step structures containing a waveguide and a laser in such a way that the active layer and the transparent optical waveguides are directly butt jointed. Broad‐area lasers exhibit typical threshold current of 1.5 kA/cm2. Coupling efficiency up to 70% has been measured on some devices.
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42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.60.By Design of specific laser systems

1.5 μm tunable wavelength filter using a phase‐shift‐controlled distributed feedback laser diode with a wide tuning range and a high constant gain

T. Numai, S. Murata, and I. Mito

Appl. Phys. Lett. 54, 1859 (1989); http://dx.doi.org/10.1063/1.101259 (2 pages) | Cited 7 times

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We demonstrate a 1.5 μm tunable wavelength filter which uses a newly developed phase‐shift‐controlled distributed feedback laser diode. A tuning range as wide as 120 GHz (9.5 Å) with 24.5 dB constant gain has been achieved. An 18‐channel wavelength selection with less than −10 dB crosstalk is expected with this filter.
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42.79.Ci Filters, zone plates, and polarizers
42.79.Dj Gratings
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Long‐lived InGaAs quantum well lasers

S. E. Fischer, R. G. Waters, D. Fekete, J. M. Ballantyne, Y. C. Chen, and B. A. Soltz

Appl. Phys. Lett. 54, 1861 (1989); http://dx.doi.org/10.1063/1.101260 (2 pages) | Cited 19 times

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Pseudomorphic InGaAs lasers with cw operating lifetimes exceeding 5000 h are reported for the first time. The device structure, grown by low‐pressure metalorganic chemical vapor deposition, incorporates a single In0.37Ga0.63As strained‐layer quantum well in a GaAs/AlGaAs graded‐index separate confinement heterostructure. These devices are remarkable for their immunity to sudden failure and for their (gradual) degradation rates which are comparable to the best GaAs lasers.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

High quality In0.53Ga0.47As Schottky diode formed by graded superlattice of In0.53Ga0.47As/In0.52Al0.48As

D. H. Lee, Sheng S. Li, N. J. Sauer, and T. Y. Chang

Appl. Phys. Lett. 54, 1863 (1989); http://dx.doi.org/10.1063/1.101261 (3 pages) | Cited 11 times

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A high quality In0.53Ga0.47As Schottky barrier diode fabricated by using a thin graded superlattice (SL) of In0.53Ga0.47As/In0.52Al0.48As grown by molecular beam epitaxy is reported for the first time in this letter. The effective Schottky barrier heights of ∼0.71 and ∼0.60 eV were obtained for the Au‐ and Cr‐Schottky contacts, respectively. Excellent current‐voltage and capacitance‐voltage characteristics were obtained for these diodes. The graded InGaAs/InAlAs SL structure allows one to circumvent the problem of carrier pileup associated with abrupt heterostructures, and hence is advantageous for forming Schottky contacts on InGaAs for high‐speed optoelectronic device applications.
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85.30.Hi Surface barrier, boundary, and point contact devices
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.30.+y Surface double layers, Schottky barriers, and work functions

Low‐temperature laser photochemical vapor deposition of GaAs

P. K. York, J. G. Eden, J. J. Coleman, G. E. Fernández, and K. J. Beernink

Appl. Phys. Lett. 54, 1866 (1989); http://dx.doi.org/10.1063/1.101262 (3 pages) | Cited 3 times

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The growth of epitaxial GaAs at temperatures below 500 °C by ultraviolet laser‐assisted metalorganic chemical vapor deposition has been investigated. Experiments were conducted at 248 nm (KrF excimer laser) and 351 nm (XeF) in normal incidence with laser fluences maintained below 13 mJ/cm2. While the growth rate was enhanced by 5–15% at 450 °C upon irradiating the substrate with 248 nm photons, no measurable effect was observed at 351 nm. This strong wavelength dependence at low fluence demonstrates that the film growth enhancement mechanism is photochemical in nature.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
82.50.Bc Processes caused by infrared radiation
82.50.Hp Processes caused by visible and UV light
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.03.Fg Evaporation and condensation of liquids

Atomic layer doped field‐effect transistor fabricated using Si molecular beam epitaxy

Kiyokazu Nakagawa, Aart A. van Gorkum, and Yasuhiro Shiraki

Appl. Phys. Lett. 54, 1869 (1989); http://dx.doi.org/10.1063/1.101263 (3 pages) | Cited 26 times

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Atomic layer doped field‐effect transistors (ALD FETs) have been fabricated, in which n‐type, δ‐doped, and p‐type doped regions are used as a conductive channel and a punchthrough stopper, respectively. It is shown that the ALD FET shows a high transconductance while the punchthrough current is sufficiently suppressed, indicating that the device is promising as a short‐channel FET for the next generation of ultralarge scale integration.
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85.30.Tv Field effect devices
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Hydrogen incorporation in silicon thin films deposited with a remote hydrogen plasma

N. M. Johnson, J. Walker, C. M. Doland, K. Winer, and R. A. Street

Appl. Phys. Lett. 54, 1872 (1989); http://dx.doi.org/10.1063/1.101264 (3 pages) | Cited 21 times

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Results are presented on the effects of growth conditions on hydrogen incorporation in Si thin films deposited with a remote hydrogen plasma. Oxygen contamination of the films was significantly reduced by replacement of the quartz tube that is commonly used to contain the hydrogen plasma with an alumina tube, with a concomitant increase in the electrical conductivity of P‐doped a‐Si:H films. Hydrogen incorporation was examined with a remote deuterium plasma and downstream injection of SiH4. As the gas flow ratio D2:SiH4 increases, the ratio D:H in the film changes as a consequence of the increasing flux of D at the growing surface. High silane dilution also promotes the formation of microcrystalline silicon, which itself affects H incorporation.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.15.Rs Spray coating techniques
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Observation of capacitive modulation of bipolar current in crystalline silicon gated p‐i‐n structures

C. C. Sun and J. M. Xu

Appl. Phys. Lett. 54, 1875 (1989); http://dx.doi.org/10.1063/1.101265 (3 pages) | Cited 1 time

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We report, for the first time, the experimental observation of capacitive modulation of bipolar current in crystalline silicon devices consisting of a lateral p‐i‐n channel and an insulated polycrystalline silicon gate. Modulation characteristics of devices with different channel lengths are compared.
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85.30.De Semiconductor-device characterization, design, and modeling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Measurement of GaAs/InP and InAs/InP heterojunction band offsets by x‐ray photoemission spectroscopy

J. R. Waldrop, R. W. Grant, and E. A. Kraut

Appl. Phys. Lett. 54, 1878 (1989); http://dx.doi.org/10.1063/1.101246 (3 pages) | Cited 23 times

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The unstrained valence‐band offset ΔEv for the x=0 and x=1 end points of the InxGa1−xAs/InP (100) heterojunction system has been measured by x‐ray photoemission spectroscopy (XPS). Although the GaAs/InP and InAs/InP interfaces are strained because of lattice mismatch, the ΔEv values obtained by the XPS measurement method used are characteristic of an unstrained interface. Values of ΔEv (GaAs/InP)=0.19 eV and ΔEv (InAs/InP)=0.31 eV are observed. A linear interpolation between the x=0 and x=1 values gives ΔEv (In0.53 Ga0.47As/ InP)=0.25 eV for the x=0.53 lattice‐matched interface (ΔEc /ΔEv =58/42).
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.65.-b Surface treatments

Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures

M. Kaminska, Z. Liliental‐Weber, E. R. Weber, T. George, J. B. Kortright, F. W. Smith, B‐Y. Tsaur, and A. R. Calawa

Appl. Phys. Lett. 54, 1881 (1989); http://dx.doi.org/10.1063/1.101229 (3 pages) | Cited 268 times

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GaAs layers grown by molecular beam epitaxy (MBE) at substrate temperatures between 200 and 300 °C were studied using transmission electron microscopy (TEM), x‐ray diffraction, and electron paramagnetic resonance (EPR) techniques. High‐resolution TEM cross‐sectional images showed a high degree of crystalline perfection of these layers. For a layer grown at 200 °C and unannealed, x‐ray diffraction revealed a 0.1% increase in the lattice parameter in comparison with bulk GaAs. For the same layer, EPR detected arsenic antisite defects with a concentration as high as 5×1018 cm−3. This is the first observation of antisite defects in MBE‐grown GaAs. These results are related to off‐stoichiometric, strongly As‐rich growth, possible only at such low temperatures. These findings are of relevance to the specific electrical properties of low‐temperature MBE‐grown GaAs layers.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Ey III-V semiconductors

Negative transconductance in a resistive gate metal‐semiconductor field‐effect transistor

Y. Yin, J. A. Cooper, P. G. Neudeck, M. L. Balzan, and A. E. Geissberger

Appl. Phys. Lett. 54, 1884 (1989); http://dx.doi.org/10.1063/1.101230 (3 pages) | Cited 6 times

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Negative transconductance is reported in a resistive gate metal‐semiconductor field‐effect transistor (MESFET) for the first time. The negative transconductance arises as a result of the negative differential mobility of electrons in the GaAs channel, and is adequately described by a simple equivalent circuit model. The experimental device is fabricated with a planar ion‐implanted MESFET process, and shows promise as a microwave signal source for use in monolithic microwave integrated circuits.
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85.30.Tv Field effect devices
73.40.Ns Metal-nonmetal contacts
85.30.De Semiconductor-device characterization, design, and modeling
72.20.Ht High-field and nonlinear effects

Observation of light‐induced defect formation in hydrogenated amorphous silicon by subgap illumination

Andrew Skumanich, Mohamed Fathallah, and Nabil M. Amer

Appl. Phys. Lett. 54, 1887 (1989); http://dx.doi.org/10.1063/1.101231 (3 pages) | Cited 1 time

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The effect of subgap illumination on the formation of light‐induced defects in hydrogenated amorphous silicon was investigated using photothermal deflection spectroscopy. As with broadband illumination, an enhancement in the subgap absorption is observed and is related to the silicon dangling bonds. The magnitude of the enhancement varies with the photon energy and with the amount of doping. The results are consistent with the mechanism of recombination of photoexcited electrons with trapped holes producing metastable defects.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Long‐range [111] ordering in GaAs1−xPx

H. R. Jen, D. S. Cao, and G. B. Stringfellow

Appl. Phys. Lett. 54, 1890 (1989); http://dx.doi.org/10.1063/1.101232 (3 pages) | Cited 25 times

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The observation of ordering in GaAsP alloys is reported. The CuPt structure with ordering along the 〈111〉 directions on the anion sublattice was observed by transmission electron diffraction patterns in GaAs1−xPx alloys at compositions of x=0.3 and 0.4. Only two of the four CuPt variants were observed. The degree of ordering along the 1/2[111] direction is higher than for the other variant, ordered along the 1/2[111] direction. In addition, the degree of ordering decreases when x is reduced from 0.4 to 0.3.
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68.55.-a Thin film structure and morphology
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Electrical properties and band offsets of InAs/AlSb n‐N isotype heterojunctions grown on GaAs

Atsushi Nakagawa, Herbert Kroemer, and John H. English

Appl. Phys. Lett. 54, 1893 (1989); http://dx.doi.org/10.1063/1.101233 (3 pages) | Cited 46 times

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The MBE growth and selected properties of InAs/AlSb n‐N isotype heterojunctions on n+‐GaAs substrates are described. Because of a large conduction‐band offset (1.35 eV), these junctions behave like Schottky barriers, with excellent rectification characteristics, despite the presence of a very high density (>107 cm−2) of threading dislocations resulting from the large lattice mismatch (7%) between AlSb and the GaAs substrate. The forward I‐V characteristics, corrected for series resistance, exhibit a large nonideality factor of about 1.8, suggesting that the main current flow is along a defect path, presumably related to the misfit dislocations. Reverse C‐V characteristics exhibit a perfectly linear 1/C2 vs V plot, from which a conduction‐band offset of 1.35±0.05 eV is deduced. This value is in excellent agreement with the value predicted from the known band offsets in InAs/GaSb and GaSb/AlSb.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Laser diode with an auxiliary channel waveguide

Sang K. Sheem

Appl. Phys. Lett. 54, 1896 (1989); http://dx.doi.org/10.1063/1.101234 (3 pages)

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When a laser diode and a directional coupler switch are combined into one structure, the device physics becomes complicated. This work reports some experimental results indicating that the switching function is accompanied by the lasing mode selection mechanism, and that it is enhanced by a longitudinal asymmetry between the coupling channels, namely, by making the lengths of two operating channels different. Such a device exhibits wavelength tunability and self‐oscillation besides the enhanced switching effect.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
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