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9 Jan 1989

Volume 54, Issue 2, pp. 87-190

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Very low loss GaAs/AlGaAs miniature bending waveguide with curvature radii less than 1 mm

Hiroaki Takeuchi and Kunishige Oe

Appl. Phys. Lett. 54, 87 (1989); http://dx.doi.org/10.1063/1.101223 (3 pages) | Cited 5 times

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Very low loss GaAs/AlGaAs miniature bending waveguides with curvature radii less than 1 mm have been fabricated. Their propagation characteristics have been measured at wavelengths of 1.30 and 1.55 μm. Total loss of the fabricated S‐bending waveguide shows no increase due to radiation loss even at small radii less than 1 mm. The measured total loss at a radius of 500 μm, for example, is 0.55 and 1.4 dB at wavelengths of 1.30 and 1.55 μm, respectively. These very low loss bending waveguides with small radii prove to be suitable for compact optical integrated circuits.
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42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Measurements of the nonlinear damping factor in 1.5 μm distributed feedback lasers

S. Tsuji, R. S. Vodhanel, and M. M. Choy

Appl. Phys. Lett. 54, 90 (1989); http://dx.doi.org/10.1063/1.101225 (3 pages) | Cited 5 times

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We demonstrate a new method to measure the nonlinear damping factor in 1.5 μm distributed feedback lasers from the phase difference between FM and AM signals due to carrier density modulation. The damping factor is found to have the same linear relation to the square of the resonance frequency for devices having different wavelength detuning.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.60.Fc Modulation, tuning, and mode locking
42.65.-k Nonlinear optics

Storage and time reversal of femtosecond light signals via persistent spectral hole burning holography

A. Rebane, J. Aaviksoo, and J. Kuhl

Appl. Phys. Lett. 54, 93 (1989); http://dx.doi.org/10.1063/1.101226 (3 pages) | Cited 27 times

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Time and space domain holography by persistent spectral hole burning in photochemically active media is shown to permit storage, recall, and conjugation of temporal profiles of light signals as short as 100 fs. This limit for the temporal resolution is set by the finite spectral width of the impurity absorption bands of presently available recording materials.
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42.30.-d Imaging and optical processing
42.79.Vb Optical storage systems, optical disks
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.40.Ht Hologram recording and readout methods

Amorphous silicon photoconductive diode

M. Hack, M. Shur, and C. C. Tsai

Appl. Phys. Lett. 54, 96 (1989); http://dx.doi.org/10.1063/1.101200 (3 pages) | Cited 7 times

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In this letter we describe the operation of a new high‐speed, high‐gain amorphous silicon sensor. The device gain originates from the photoconductive properties of amorphous silicon but good light to dark sensitivity is obtained by suppressing the sensor dark current by means of a lightly p‐type barrier layer. Optical gains in excess of 100 have been achieved with response times of approximately 200 μs.
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85.60.Dw Photodiodes; phototransistors; photoresistors
73.50.Pz Photoconduction and photovoltaic effects
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Improved attenuated total reflectance technique for the investigation of dielectric surfaces

S. Herminghaus and P. Leiderer

Appl. Phys. Lett. 54, 99 (1989); http://dx.doi.org/10.1063/1.101201 (3 pages) | Cited 2 times

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Guided wave surface polaritons (GWSPs) propagating in a dielectric slab adjacent to a metal surface are investigated both theoretically and experimentally. It is shown that GWSPs can be used for high‐resolution analysis of dielectric surfaces by means of the well‐known attenuated total reflectance technique. From our experimental results we conclude that changes in the system equivalent to the adsorption of 1/30 of a monolayer can easily be resolved. A well‐established surface characterization method, which had been restricted to few systems up to now, is thus immensely generalized.
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73.20.At Surface states, band structure, electron density of states
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
77.90.+k Other topics in dielectrics, piezoelectrics, and ferroelectrics and their properties (restricted to new topics in section 77)

High‐temperature kinetics in He and Ne buffered XeF lasers: The effect on absorption

Thomas J. Moratz, Todd D. Saunders, and Mark J. Kushner

Appl. Phys. Lett. 54, 102 (1989); http://dx.doi.org/10.1063/1.101241 (3 pages) | Cited 9 times

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Excimer lasers excited by electron or ion beams having energy deposition of 100’s J/l over many microseconds experience a temperature rise of hundreds of degrees (K). The increase in gas temperature may greatly impact both the kinetics and spectroscopic parameters. In this letter we discuss the high‐temperature (≤900 K) plasma kinetics and absorption in He and Ne buffered gas mixtures for particle beam pumped XeF lasers. We find both gain and absorption depend differently on gas temperature in these mixtures (absorption decreasing in He mixtures, increasing in Ne mixtures). The differences are attributed to a reduction in diatomic absorbing species with increasing temperature and differences in the temperature dependence of the optical absorption cross sections for NeXe+ and Xe+2.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Temperature engineered growth of low‐threshold quantum well lasers by metalorganic chemical vapor deposition

K. M. Dzurko, E. P. Menu, C. A. Beyler, J. S. Osinski, and P. D. Dapkus

Appl. Phys. Lett. 54, 105 (1989); http://dx.doi.org/10.1063/1.101242 (3 pages) | Cited 12 times

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A new technique is demonstrated for the formation of narrow active regions in quantum well lasers. In temperature engineered growth (TEG), the substrate temperature is varied during the growth of epitaxial layers by metalorganic chemical vapor deposition (MOCVD) on nonplanar substrates, allowing two‐dimensional control of device features. Buried heterostructure designs with submicron active region stripe widths are obtained without the need for fine process control of lateral dimensions. The contact area above the active region is coplanar with the surrounding surface and wide enough to allow easy contacting and heat sinking. Carrier confinement is accomplished by lateral thickness variation of the quantum well active region resulting in a local strip of minimum band gap. Lasers grown in this manner exhibit cw threshold currents as low as 3.8 mA (3.4 mA pulsed), having an as‐grown active region width of 0.5 μm. The near‐field optical profile indicates stable, single transverse mode operation and minimal current leakage in these devices.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Double active region index‐guided semiconductor laser

T. R. Chen, M. Kajanto, Yuhua Zhuang, and A. Yariv

Appl. Phys. Lett. 54, 108 (1989); http://dx.doi.org/10.1063/1.101243 (3 pages)

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A buried crescent InGaAsP/InP laser with a double active layer was fabricated. The laser showed very high characteristic temperature T0 and highly nonlinear light versus current characteristics. A theoretical model using a rate equation approach showed good agreement with the experimental results.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Harmonic cross phase modulation in ZnSe

P. P. Ho, Q. Z. Wang, D. Ji, T. Jimbo, and R. R. Alfano

Appl. Phys. Lett. 54, 111 (1989); http://dx.doi.org/10.1063/1.101244 (3 pages) | Cited 4 times

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The temporal profiles of harmonic cross phase modulation pulses from 500 to 570 nm generated in ZnSe by a 1054 nm picosecond pulse have been observed and theoretically modeled. The pulse shape of these harmonic‐modulated pulses is accounted for by the interference and induced phase matching of the harmonic generated waves in ZnSe by cross phase modulation.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.-e Optical properties of bulk materials and thin films

Monolithic integrated InGaAsP/InP distributed feedback laser with Y‐branching waveguide and a monitoring photodetector grown by metalorganic chemical vapor deposition

K.‐Y. Liou, U. Koren, S. Chandrasekhar, T. L. Koch, A. Shahar, C. A. Burrus, and R. P. Gnall

Appl. Phys. Lett. 54, 114 (1989); http://dx.doi.org/10.1063/1.101245 (3 pages) | Cited 9 times

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We have fabricated an integrated 1.5 μm distributed feedback laser (DFB) with a Y‐branching waveguide and a monitoring photodetector, grown entirely by metalorganic chemical vapor deposition. The integrated device is designed to resolve the frontface‐backface mistracking problem of the DFB laser and to demonstrate monolithic integration of fundamental building blocks for photonic integrated circuits.
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42.55.Px Semiconductor lasers; laser diodes
85.60.Dw Photodiodes; phototransistors; photoresistors
42.82.-m Integrated optics
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Electron and x‐ray diffraction study of ZnTe‐ZnS strained‐layer superlattices grown by molecular beam epitaxy

Takeshi Karasawa, Kazuhiro Ohkawa, and Tsuneo Mitsuyu

Appl. Phys. Lett. 54, 117 (1989); http://dx.doi.org/10.1063/1.101224 (3 pages) | Cited 4 times

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Reflection high‐energy electron diffraction observation during the growth of ZnTe‐ZnS strained‐layer superlattices shows that sharp streaks of the substrate were replaced by a spotty pattern which eventually elongated into streaks. X‐ray diffraction data of the superlattice with small period show satellite peaks around an intense central peak. These studies indicate a good superlattice structure for the samples with small (<50 Å) periods.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)

Bias‐induced structure transition in reactively sputtered TiN films

Keiichi Hashimoto and Hiroshi Onoda

Appl. Phys. Lett. 54, 120 (1989); http://dx.doi.org/10.1063/1.101227 (3 pages) | Cited 16 times

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The properties of TiN films deposited under large negative bias (up to ‖920‖ V) in dc reactive sputtering have been investigated. A crystallographic structure transition in TiN films was observed with an increase of negative substrate bias in reactive sputtering. The crystal orientation normal to the film surface changed from 〈111〉 to 〈200〉 direction at the negative substrate bias voltage higher than approximately ‖200‖ V. The crystal orientation transition was independent of substrate crystallographic information. The bias sputtered TiN film never absorbed oxygen when it was exposed to air. The porosity of TiN film has been much improved by applying a large negative substrate bias.
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68.55.-a Thin film structure and morphology
81.15.Cd Deposition by sputtering
73.61.Ng Insulators
68.60.Bs Mechanical and acoustical properties

Correlation of the optical gaps and Raman spectra of hydrogenated amorphous carbon films

M. A. Tamor, J. A. Haire, C. H. Wu, and K. C. Hass

Appl. Phys. Lett. 54, 123 (1989); http://dx.doi.org/10.1063/1.101228 (3 pages) | Cited 98 times

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The Raman and infrared absorption spectra, optical gaps, and electron spin densities of amorphous carbon films deposited from hydrocarbon plasmas have been systematically studied as a function of deposition conditions and Raman probe wavelength. Although all other probes are consistent with a monotonic increase in intermediate‐range order with substrate bias voltage Vb, the optical gap decreases with increasing Vb (consistent with increasing graphitic domain size) only up to the onset of sputtering, where the gap sharply increases. We propose a simple structural model for a‐C:H which is consistent with these results and requires no sp3 bonding.
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78.35.+c Brillouin and Rayleigh scattering; other light scattering
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.66.-w Optical properties of specific thin films
73.20.At Surface states, band structure, electron density of states

Triethylgallium adsorption on Si(100) and Si(111) surfaces

Hiroyuki Hirayama, Chiaki Sasaoka, Toru Tatsumi, and Yoshio Ohshita

Appl. Phys. Lett. 54, 126 (1989); http://dx.doi.org/10.1063/1.101205 (3 pages) | Cited 6 times

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Triethylgallium (TEG) adsorption on Si(100) 2×1 and Si(111) 7×7 surfaces was studied by reflection high‐energy electron diffraction (RHEED) and x‐ray photoelectron spectroscopy (XPS). At room temperature, TEG molecules nondissociatively adsorbed on Si surface. Being judged from the Ga 2P3/2 and C 1s peak height, TEG molecules dissociatively adsorbed and Ga was selectively deposited on Si surfaces at temperatures between 200 and 500 °C. At temperatures above 500 °C, Ga thermal desorption was observed. RHEED pattern showed the β‐SiC growth in this temperature range. Temperature dependence of the Ga 2P3/2 peak at Si(100) was different from that at Si(111), which strongly suggests that the surface dangling bond plays an important role in TEG dissociative adsorption.
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68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
68.43.-h Chemisorption/physisorption: adsorbates on surfaces
81.65.-b Surface treatments

Rutherford backscattering spectroscopy and electron microprobe analyses of argon gas trapped in alumina thin films

Lynne M. Gignac and Subhash H. Risbud

Appl. Phys. Lett. 54, 129 (1989); http://dx.doi.org/10.1063/1.101439 (2 pages)

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rf‐sputtered aluminum oxide thin films were analyzed for argon content using electron microprobe analysis (EMPA). Standardless Rutherford backscattering spectroscopy was performed on several Al2O3 films, and these data were used as calibration standards in EMPA. EMPA performed at 10 keV with two separate film standards gave reproducible trends; the estimated error in the EMPA argon analysis was calculated to be ±0.8 wt. % at 10 keV and ±1.4 wt. % at 5 keV.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.Nq Composition and phase identification
82.80.Yc Rutherford backscattering (RBS), and other methods of chemical analysis
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Tunable far‐infrared photovoltaic response in semiconductor field‐effect devices

E. Batke, J. Kaminsky, J. P. Kotthaus, and J. Spector

Appl. Phys. Lett. 54, 131 (1989); http://dx.doi.org/10.1063/1.101206 (3 pages) | Cited 5 times

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In semiconductor field‐effect devices with quasi‐two‐dimensional electron channels we observe a novel resonant photovoltaic response to the high‐power radiation of a far‐infrared free‐electron laser. A fast photovoltaic signal occurs when a laser pulse is resonantly absorbed by a plasmon in the two‐dimensional electron system. The plasmon frequency and hence the resonant photovoltaic response can be voltage tuned via field effect.
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85.30.Tv Field effect devices
72.40.+w Photoconduction and photovoltaic effects
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
71.45.Gm Exchange, correlation, dielectric and magnetic response functions, plasmons

Carrier‐injection‐type optical switch in GaAs with a 1.06–1.55 μm wavelength range

Fumihiko Ito and Tadatoshi Tanifuji

Appl. Phys. Lett. 54, 134 (1989); http://dx.doi.org/10.1063/1.101207 (3 pages) | Cited 3 times

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A carrier‐injection‐type optical switch which operates in the 1.06–1.55 μm wavelength range is designed and fabricated. This switch uses the plasma dispersion effect in GaAs. Switching current is about 90 mA at all in‐range wavelengths. Its broad wavelength range is suitable for optical signal processing applications in wavelength division multiplexing transmission systems.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.79.Gn Optical waveguides and couplers
85.60.-q Optoelectronic devices

Effects of surface treatments on Schottky barrier formation at metal/n‐type CdTe contacts

I. M. Dharmadasa, J. M. Thornton, and R. H. Williams

Appl. Phys. Lett. 54, 137 (1989); http://dx.doi.org/10.1063/1.101208 (3 pages) | Cited 36 times

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The nature of n‐CdTe surfaces prepared by various chemical treatments has been studied by x‐ray photoelectron spectroscopy. In parallel experiments Schottky barrier heights have been measured for Sb and Au contacts deposited on surfaces prepared in an identical manner. Reducing etches are found to leave the surface rich in Cd, and for these surfaces Sb and Au always produce barrier heights of 0.93±0.02 eV. Bromine in methanol solutions leaves the surface rich in Te and gives rise to two valued barrier heights of 0.93 and 0.72 eV. It is found that the probability of generating contacts with the higher value of barrier height increases as the surface becomes richer in Cd.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
81.65.-b Surface treatments

Growth of InP on Si substrates by molecular beam epitaxy

T. E. Crumbaker, H. Y. Lee, M. J. Hafich, and G. Y. Robinson

Appl. Phys. Lett. 54, 140 (1989); http://dx.doi.org/10.1063/1.101209 (3 pages) | Cited 19 times

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The growth of single‐crystal InP films on (100) Si substrates by molecular beam epitaxy (MBE) is described. Three different buffer layers were grown by gas‐source MBE in order to reduce the density of dislocations created by the 8% InP‐Si lattice mismatch. Double‐crystal x‐ray diffraction revealed that all buffer layers produced large‐area single‐crystal (100) InP films with the InP lattice tilted towards the 〈100〉 Si directions. A buffer layer of four Inx Ga1−x P/Iny Ga1−y P strained superlattices produced a specular InP film with an estimated dislocation density of 108–109 cm−2 and a residual stress of less than 5×10−4.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.-a Thin film structure and morphology
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

ZnHgTe as a material for ambient temperature 10.6 μm photodetectors

Jozef Piotrowski, Krzysztof Adamiec, Andrzej Maciak, and Zenon Nowak

Appl. Phys. Lett. 54, 143 (1989); http://dx.doi.org/10.1063/1.101210 (2 pages) | Cited 8 times

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Ambient temperature 10.6 μm ZnHgTe photodetectors are reported. Undoped and Cu‐doped bulk Zn0.115Hg0.885Te crystals have been grown by the quench‐anneal technique. Homogeneity of ±0.002 mol has been determined by x‐ray lattice constant measurement. The absorption coefficient as a function of wavelength, photoconductive lifetime, Hall concentration, and mobility have been measured for both intrinsic and Cu‐doped p‐type material. Infrared photoconductors have been fabricated and characterized. The relative stability and hardness make the fabrication of the devices easier compared to the HgCdTe, and the ατ/n figure of merit of Hg0.885Zn0.115Te at 10.6 μm, a factor of at least 4 higher compared to HgCdTe, has been found. The detectivity of 108 cm Hz1/2/W seems to be achievable using HgZnTe photoconductors with optimized composition, doping, and geometry.
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85.60.Dw Photodiodes; phototransistors; photoresistors
72.40.+w Photoconduction and photovoltaic effects

Alloy broadening of the emission barrier of the DX center in aluminum gallium arsenide

S. Subramanian, S. Anand, S. Chakravarty, and B. M. Arora

Appl. Phys. Lett. 54, 145 (1989); http://dx.doi.org/10.1063/1.101211 (3 pages) | Cited 8 times

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The effect of alloy fluctuations on the emission barrier of the DX center in aluminum gallium arsenide (AlGaAs) is studied by constant capacitance deep level transient spectroscopy using Si‐doped and Sn‐doped samples grown by different growth techniques. All the samples showed single broadened peaks which were analyzed by assuming a Gaussian distribution for the emission barrier. The full width at half maximum for the emission barrier spread was found to be the same (∼0.05+0.005 eV) for all the samples and is of the same order as the reported capture barrier spread for Si‐doped AlGaAs, which strongly suggests that the binding energy spread of the DX center in AlGaAs is very small.
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71.55.Eq III-V semiconductors
85.30.De Semiconductor-device characterization, design, and modeling

Dislocation nucleation and propagation in Si0.95Ge0.05 layers on silicon

C. J. Gibbings, C. G. Tuppen, and M. Hockly

Appl. Phys. Lett. 54, 148 (1989); http://dx.doi.org/10.1063/1.101212 (3 pages) | Cited 25 times

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Defect reveal etching has been used to study the onset of relaxation in strained Si0.95 Ge0.05 layers grown by molecular beam epitaxy on (001) silicon substrates. Etch features corresponding to nucleation centers and to interfacial and threading segments of mismatch dislocations have been observed at thicknesses well below the expected critical thickness. From these it is deduced that mismatch dislocations take the form of half‐loops on {111} planes which glide approximately symmetrically outwards from existing defects along the 〈110〉 directions parallel to the interface.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Dv Composition, segregation; defects and impurities
81.65.-b Surface treatments

Nonlinear viscoelastic dilation of SiO2 films

C. S. Rafferty, L. M. Landsberger, R. W. Dutton, and W. A. Tiller

Appl. Phys. Lett. 54, 151 (1989); http://dx.doi.org/10.1063/1.101440 (2 pages) | Cited 18 times

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Oxide dilation in thin films is analyzed using a Voigt viscoelastic model. If stress‐dependent viscosity is used to model the dilation, a logarithmic time evolution is predicted. The form of the solution is in agreement with the non‐Maxwellian behavior seen in experimental data. The analysis provides an estimate of the critical stress and low‐stress viscosity of dry SiO2 films.
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68.60.Bs Mechanical and acoustical properties
81.40.Lm Deformation, plasticity, and creep

Resonant tunneling diodes for switching applications

S. K. Diamond, E. Özbay, M. J. W. Rodwell, D. M. Bloom, Y. C. Pao, and J. S. Harris

Appl. Phys. Lett. 54, 153 (1989); http://dx.doi.org/10.1063/1.101213 (3 pages) | Cited 25 times

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Rise times for simple pulse‐forming circuits are presented. Switching times for present best devices are in the range of 5–15 ps. An equivalent circuit model for resonant tunneling diodes inclusive of space‐charge effects and transit time effects in the depletion region is presented. From these models it is shown that switching times are limited by the device RC time constants and are relatively unaffected by the resonant state lifetime or depletion layer transit times. Appropriate figures of merit for switching applications are the device capacitance and peak current density. Less emphasis should be placed on improving the peak‐to‐valley ratio. Optimally designed devices which maximize the current density should be capable of switching in under 5 ps.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Gk Tunneling

High quality GaAs quantum well lasers grown on InP substrates by organometallic chemical vapor deposition

C. J. Chang‐Hasnain, Y. H. Lo, R. Bhat, N. G. Stoffel, and T. P. Lee

Appl. Phys. Lett. 54, 156 (1989); http://dx.doi.org/10.1063/1.101214 (3 pages) | Cited 4 times

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High quality GaAs quantum well lasers grown on (100) and 3°‐off (100)InP substrates by organometallic chemical vapor deposition were investigated for the first time. 50‐μm‐wide broad‐area gain‐guided lasers were fabricated using preferential proton implantation. Low threshold densities, 800 and 1080 A/cm2, were obtained at room temperature for lasers with 1.25‐mm‐long cavities grown on 3°‐off (100) and (100) oriented InP substrates, respectively. High quantum efficiency of 36% and nearly single longitudinal mode emission were also achieved from these lasers.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
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