Ambient temperature 10.6 μm ZnHgTe photodetectors are reported. Undoped and Cu‐doped bulk Zn0.115Hg0.885Te crystals have been grown by the quench‐anneal technique. Homogeneity of ±0.002 mol has been determined by x‐ray lattice constant measurement. The absorption coefficient as a function of wavelength, photoconductive lifetime, Hall concentration, and mobility have been measured for both intrinsic and Cu‐doped p‐type material. Infrared photoconductors have been fabricated and characterized. The relative stability and hardness make the fabrication of the devices easier compared to the HgCdTe, and the ατ/n figure of merit of Hg0.885Zn0.115Te at 10.6 μm, a factor of at least 4 higher compared to HgCdTe, has been found. The detectivity of 108 cm Hz1/2/W seems to be achievable using HgZnTe photoconductors with optimized composition, doping, and geometry.