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15 May 1989

Volume 54, Issue 20, pp. 1947-2042

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Reactive ion etching of InP with Br2‐containing gases to produce smooth, vertical walls: Fabrication of etched‐faceted lasers

K. Takimoto, K. Ohnaka, and J. Shibata

Appl. Phys. Lett. 54, 1947 (1989); http://dx.doi.org/10.1063/1.101202 (3 pages) | Cited 13 times

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We describe the reactive ion etching of InP using a mixture of Br2 and either N2 or Ar. We report the first fabrication of straight vertical walls in InP at a very fast etching rate of 2 μm/min. By using a mixture of Br2 and Ar and raising the substrate temperature, smooth walls are obtained. To demonstrate that the etched walls can be used as laser mirrors, we fabricated etched‐faceted lasers with threshold currents of 19.0 mA for a laser with one etched and one cleaved facet and 26.6 mA for a laser with two etched facets.
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81.65.-b Surface treatments
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces

CO2 large‐area discharge laser using an unstable‐waveguide hybrid resonator

P. E. Jackson, H. J. Baker, and D. R. Hall

Appl. Phys. Lett. 54, 1950 (1989); http://dx.doi.org/10.1063/1.101203 (3 pages) | Cited 32 times

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A one‐dimensional unstable resonator combining free‐space and waveguide propagation is used to efficiently extract power from a large‐area gain medium in a slab waveguide CO2 laser. A power of 240 W in a near‐diffraction‐limited beam has been attained at 12% conversion efficiency from a 38 cm gain length in a compact sealed‐off laser head, corresponding to a specific power extraction of 14 kW m−2 of discharge area.
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42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Picosecond pulse amplification by wave mixing in GaAs

H. M. Ma and F. M. Li

Appl. Phys. Lett. 54, 1953 (1989); http://dx.doi.org/10.1063/1.101204 (3 pages) | Cited 2 times

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Pulses at 1.064 μm were amplified up to 102 times by nonlinear mixing with a coherent pump wave in GaAs. The observed amplification shows a strong dependence on the intersection angle and time delay between pump and probe pulses. The effect is discussed in terms of self‐diffraction by a laser‐induced free‐carrier grating.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Px Semiconductor lasers; laser diodes
42.79.Dj Gratings
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Infrared to visible image frequency conversion in Cd(S,Se) glass composites

L. H. Acioli, A. S. L. Gomes, J. R. Rios Leite, and Cid B. de Araujo

Appl. Phys. Lett. 54, 1956 (1989); http://dx.doi.org/10.1063/1.101183 (3 pages) | Cited 6 times

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Wave mixing experiments are reported using two infrared and one visible laser beams which are incident on a semiconductor doped glass. The mixing process produces infrared to visible image conversion via the material electronic nonlinearity with fast (less than 20 ps) time response.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.Ce Glasses, quartz
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.30.Va Image forming and processing

High‐power vertical‐cavity surface‐emitting AlGaAs/GaAs diode lasers

L. M. Zinkiewicz, T. J. Roth, L. J. Mawst, D. Tran, and D. Botez

Appl. Phys. Lett. 54, 1959 (1989); http://dx.doi.org/10.1063/1.101184 (3 pages) | Cited 20 times

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Vertical‐cavity surface emitters with rear mirrors made of conductive semiconductor stack reflectors (Rr =98%) were developed. Current confinement is obtained via an etch and regrowth technique with no need for dielectrics. Peak powers of 120 mW were achieved at room temperature. The external differential quantum efficiency is 15%.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems

100 GHz traveling‐wave electro‐optic phase modulator

J. Nees, S. Williamson, and G. Mourou

Appl. Phys. Lett. 54, 1962 (1989); http://dx.doi.org/10.1063/1.101185 (3 pages) | Cited 12 times

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Dramatic bandwidth enhancement has been achieved in a GaAs traveling‐wave electro‐optic phase modulator by the addition of a GaAs superstrate to suppress both velocity mismatch and electrical dispersion.
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42.79.Hp Optical processors, correlators, and modulators
78.20.Jq Electro-optical effects

Transient absorption spectroscopy of Kr2F(42Γ)

D. P. Greene and A. W. McCown

Appl. Phys. Lett. 54, 1965 (1989); http://dx.doi.org/10.1063/1.101186 (3 pages) | Cited 3 times

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An optical multichannel detection system was used in conjunction with a pulsed xenon lamp and an ultraviolet preionized discharge to record the continuous absorption spectrum of Kr2F(42Γ‐92Γ) in the 255–455 nm wavelength region. The absorbing species was positively identified by its temporal and F2 pressure dependences. Peak absorption occurs at 315 nm and has a half width of 85 nm.
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33.20.Lg Ultraviolet spectra
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
07.60.Rd Visible and ultraviolet spectrometers
42.55.Lt Gas lasers including excimer and metal-vapor lasers
33.20.Kf Visible spectra

Self‐pumped phase conjugation in InP:Fe

R. B. Bylsma, A. M. Glass, D. H. Olson, and M. Cronin‐Golomb

Appl. Phys. Lett. 54, 1968 (1989); http://dx.doi.org/10.1063/1.101187 (3 pages) | Cited 8 times

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We report here for the first time the demonstration of self‐pumped phase conjugation in photorefractive semiconductors using 1.32 μm light. Using an ac field technique to enhance the gain coefficient in InP:Fe and a single input pump beam, phase conjugate reflectivities of 11% were measured using an input beam intensity of less than 1 mW/mm2. These results open up many possibilities for using photorefractive semiconductors in applications with low‐power infrared diode lasers.
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42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
72.40.+w Photoconduction and photovoltaic effects
78.20.Jq Electro-optical effects

Detection of pulse to pulse timing jitter in periodically gain‐switched semiconductor lasers

E. H. Böttcher and D. Bimberg

Appl. Phys. Lett. 54, 1971 (1989); http://dx.doi.org/10.1063/1.101370 (3 pages) | Cited 9 times

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Methods to assess pulse to pulse timing jitter in periodicallly gain‐switched semiconductor lasers are investigated. The power spectrum of the optical pulse train for mutually incoherent fluctuations of the turn‐on delay time and the pulse amplitude is calculated. The result shows that a measurement of the power spectrum alone is not sufficient for the characterization of the inherent timing jitter. Additional knowledge of the optical waveform and the transfer characteristics of the detection system is necessary.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Fc Modulation, tuning, and mode locking

Direct formation of conductor films by laser sublimating of ceramics

Noboru Morita, Takehiro Watanabe, and Yoshitaro Yoshida

Appl. Phys. Lett. 54, 1974 (1989); http://dx.doi.org/10.1063/1.101188 (2 pages) | Cited 10 times

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A new method for direct formation of conductor lines onto ceramic substrates is presented. This method involves the selective forming of aluminum thin films by decomposing aluminum nitride (AlN) ceramics in argon (Ar) gas atmosphere with a Q‐switched yttrium aluminum garnet (YAG) laser. The aluminum films can also be employed as a catalyst in electroless plating. With nickel (Ni) electroless plating solution, Ni conductor lines with a specific resistance about 1×10−7 Ω m were directly and selectively formed on the aluminum layer.
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81.05.Bx Metals, semimetals, and alloys
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
85.40.Ls Metallization, contacts, interconnects; device isolation

Analytic comparison of the sensitivities of bulk‐wave, surface‐wave, and flexural plate‐wave ultrasonic gravimetric sensors

S. W. Wenzel and R. M. White

Appl. Phys. Lett. 54, 1976 (1989); http://dx.doi.org/10.1063/1.101189 (3 pages) | Cited 53 times

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We show that, for small added masses, the sensitivities of bulk‐mode, surface‐mode, and flexural plate‐mode gravimetric ultrasonic sensors are respectively 2/ρλ, ≊1/ρλ, and 1/2ρd, where ρ is the density of the sensor substrate material, λ is the wavelength, and d is the plate thickness of the flexural‐mode sensor.
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43.35.Yb Ultrasonic instrumentation and measurement techniques
07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Generation of acoustic phase conjugate waves using nonlinear electroacoustic interaction in LiNbO3

Masahiro Ohno

Appl. Phys. Lett. 54, 1979 (1989); http://dx.doi.org/10.1063/1.101504 (2 pages) | Cited 9 times

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Acoustic phase conjugate waves were generated at 60 MHz using nonlinear electroacoustic interaction in LiNbO3. The phase conjugate reflectivity was measured as a function of the incident pulse duration. The amplitude reflectivity was of the order of 10−3 for a 1.8×104 V m−1 pump electric field and was proportional to the incident pulse duration, showing agreement with the theory.
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63.20.K- Phonon interactions
43.35.Gk Phonons in crystal lattices, quantum acoustics
63.20.kd Phonon-electron interactions
43.35.-c Ultrasonics, quantum acoustics, and physical effects of sound
72.50.+b Acoustoelectric effects
73.50.Rb Acoustoelectric and magnetoacoustic effects
77.65.Dq Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics
43.35.Cg Ultrasonic velocity, dispersion, scattering, diffraction, and attenuation in solids; elastic constants

Field‐induced segregation effects during secondary‐ion mass spectrometry depth profiling of Cu and Na implanted in silicon

C. J. Vriezema, K. T. F. Janssen, and P. R. Boudewijn

Appl. Phys. Lett. 54, 1981 (1989); http://dx.doi.org/10.1063/1.101505 (3 pages) | Cited 13 times

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Segregation effects during secondary‐ion mass spectrometry (SIMS) depth profiling of Cu and Na implanted in n‐ and p‐type Si are investigated under different oxygen bombardment conditions. The segregation effects are studied also with SIMS using Cs bombardment. These experiments revealed that Cu and Na segregate under primary beam conditions by which a SiO2 layer forms and positive primary ions are used. In agreement with the thermodynamics of the Si‐Cu‐O and Si‐Na‐O systems, the Na segregates at the oxide side of the SiO2/Si interface whereas Cu segregates at the silicon side of the interface. When primary O− ions are used the electric field is inverted and the segregation of Na disappears and is minimized in case of Cu. This dependence on the charge state of the primary ions demonstrates the overriding importance of the field‐induced effect of this phenomenon.
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68.35.Fx Diffusion; interface formation
66.30.J- Diffusion of impurities
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
07.75.+h Mass spectrometers

Ferrotrielasticity and birefringence in cadmium chlorapatite

Ahmed Amin and Robert E. Newnham

Appl. Phys. Lett. 54, 1984 (1989); http://dx.doi.org/10.1063/1.101506 (2 pages)

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Ferrotrielasticity is discussed in terms of the structural aspects of cadmium chlorapatite. Optical retardation in single‐crystal cadmium chlorapatite Cd5 (PO4)3Cl has been measured as a function of temperature. The results will be presented and the possibility of a high‐order ferrotrielastic switching will be discussed.
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62.20.D- Elasticity
78.20.hb Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects
78.20.Fm Birefringence

Intersubband optical transitions in Si‐Si0.5Ge0.5 superlattices

R. J. Turton and M. Jaros

Appl. Phys. Lett. 54, 1986 (1989); http://dx.doi.org/10.1063/1.101190 (3 pages) | Cited 30 times

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See Also: Erratum

Show Abstract
Large oscillator strengths are predicted for optical transitions between conduction subbands of Si‐Si0.5 Ge0.5 strained‐layer superlattices. The transition energies in question are in the infrared range (50–300 meV).
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Influence of band‐gap shrinkage on the carrier‐induced refractive index change in InGaAsP

D. Botteldooren and R. Baets

Appl. Phys. Lett. 54, 1989 (1989); http://dx.doi.org/10.1063/1.101191 (3 pages) | Cited 3 times

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The refractive index change induced by depletion of highly doped n‐type InGaAsP materials is calculated. A new, numerically simple and accurate model for the high carrier density band‐gap shrinkage is introduced. In contrast to the results of earlier calculations, our results show that the refractive index change depends only weakly on the difference between the optical wavelength used and the band‐gap wavelength.
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78.20.Jq Electro-optical effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Ultralong minority‐carrier lifetimes in GaAs grown by low‐pressure organometallic vapor phase epitaxy

L. W. Molenkamp, G. L. M. Kampschöer, W. de Lange, J. W. F. M. Maes, and P. J. Roksnoer

Appl. Phys. Lett. 54, 1992 (1989); http://dx.doi.org/10.1063/1.101192 (3 pages) | Cited 5 times

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We have measured minority‐carrier lifetimes of up to 4.9 μs in GaAs layers that have been grown by low‐pressure organometallic vapor phase epitaxy. These lifetimes, representing a major improvement compared with previously obtained results, are governed by radiative recombination processes. Carbon incorporation during crystal growth at low arsine partial pressures is of prime importance in understanding the origin of these very long lifetimes.
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73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Cr III-V semiconductors

Hydrogen and boron concentrations in doped hydrogenated amorphous silicon‐carbon films measured by nuclear reaction analysis

Fangqing Zhang, Guanghua Chen, and Deyan He

Appl. Phys. Lett. 54, 1995 (1989); http://dx.doi.org/10.1063/1.101193 (2 pages) | Cited 2 times

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Hydrogen concentration, boron concentration, and their depth profiles in boron‐doped hydrogenated amorphous silicon‐carbon films have been measured by nuclear reaction analysis. We find that the concentrations of hydrogen and boron in the films depend on the doping gas ratio of B2H6 to SiH4+CH4. With the increase of the boron doping gas ratio from 10−4 to 10−2, the hydrogen concentration decreases from 38.7 to 6.2 at. % and the boron concentration increases from 0.0094 to 1.2 wt. %. A simple discussion for the results obtained is also presented.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Anharmonic oscillator model of a quantum dot nanostructure

Marshall Luban, James H. Luscombe, Mark A. Reed, and D. L. Pursey

Appl. Phys. Lett. 54, 1997 (1989); http://dx.doi.org/10.1063/1.101194 (3 pages) | Cited 15 times

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The energy level spacings observed recently in resonant tunneling through an axially symmetric double‐barrier quantum dot structure are reproduced by an isotropic two‐dimensional anharmonic oscillator model. We propose that the extent of the depletion region in such a device effectively controls the possible angular momentum states of those electrons contributing to the current‐voltage curve.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Gk Tunneling

Atomic layer epitaxy of GaAs using triethylgallium and arsine

H. Ohno, S. Ohtsuka, H. Ishii, Y. Matsubara, and H. Hasegawa

Appl. Phys. Lett. 54, 2000 (1989); http://dx.doi.org/10.1063/1.101195 (3 pages) | Cited 18 times

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Atomic layer epitaxy (ALE) of GaAs is realized using triethylgallium (TEG) and arsine in a conventional atmospheric pressure metalorganic vapor phase epitaxy reactor. It is shown that the use of TEG and arsine resulted in ALE growth of GaAs in rather limited ranges of substrate temperature and the TEG supply rate. The mechanism of ALE is also discussed with the aid of x‐ray photoelectron spectroscopy on the surfaces of clean GaAs before and after exposure to TEG.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.65.-b Surface treatments

Effect of grain size on conduction mechanism in polycrystalline silicon

Kazuhiko Sagara and Eiichi Murakami

Appl. Phys. Lett. 54, 2003 (1989); http://dx.doi.org/10.1063/1.101196 (3 pages) | Cited 14 times

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Amorphous silicon was deposited on SiO2 in ultrahigh vacuum and annealed for 8 h at 600 °C in a nitrogen atmosphere. Transmission electron microscopy shows a columnar structure of polycrystalline silicon with the average grain size of 2.5 μm. Boron doses of 3×1013–6×1014 cm−2 were implanted at 30 keV into those films and annealed for 20 min at 950 °C. Hall and resistivity measurements show that the carrier concentration was 100% of the doping concentration and the hole mobility was 20–60 cm2/V s. It was also found that the dependence of hole mobility on carrier concentration is in good agreement with that for the fine grain polycrystalline silicon.
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73.50.Bk General theory, scattering mechanisms
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Tribological properties of diamond films grown by plasma‐enhanced chemical vapor deposition

M. S. Wong, R. Meilunas, T. P. Ong, and R. P. H. Chang

Appl. Phys. Lett. 54, 2006 (1989); http://dx.doi.org/10.1063/1.101197 (3 pages) | Cited 33 times

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Uniform and continuous diamond films have been deposited on Si, Mo, and many other substrates by plasma‐enhanced chemical vapor deposition. We have developed processes to enhance the adhesion of diamond films to metal substrates for tribological applications. The tribological properties of the diamond films are found to be significantly different depending on their morphology, grain size, and roughness. However, under all cases tested using a ring‐on‐block tribotester, it is found that for diamond films with a small grain size of 1–3 μm, the coefficient of friction of the diamond films sliding against a steel ring under lubrication of a jet of mineral oil is about 0.04.
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68.60.Bs Mechanical and acoustical properties
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
62.20.Qp Friction, tribology, and hardness

Dislocation density reduction by isoelectronic impurities in semiconductors

W. Walukiewicz

Appl. Phys. Lett. 54, 2009 (1989); http://dx.doi.org/10.1063/1.101198 (3 pages) | Cited 16 times

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A new mechanism for dislocation density reduction by isoelectronic doping is proposed. It is shown that the strain introduced by randomly distributed dopants lowers the vacancy supersaturation impeding dislocation formation via vacancy condensation. Trends in dislocation reduction through codoping with isoelectronic and electrically active impurities are discussed for the case of GaAs doped with indium.
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61.72.Lk Linear defects: dislocations, disclinations
61.72.jd Vacancies
61.72.jj Interstitials
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
71.55.Eq III-V semiconductors

Intersubband population inversion in quantum wire structures

S. Briggs, D. Jovanovic, and J. P. Leburton

Appl. Phys. Lett. 54, 2012 (1989); http://dx.doi.org/10.1063/1.101371 (3 pages) | Cited 31 times

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When the spacing between subbands in a quantum wire is equal to the optic phonon energy a situation occurs under longitudinal field conditions where the upper subband population is enhanced with respect to the lower subband. We focus our investigation on the case where a third, intermediate subband is located slightly below the upper subband. We use a Monte Carlo simulation and obtain a population inversion between the upper and intermediate subbands. Intersubband optical transitions with the possibility of far‐infrared stimulated emission seem to be significant.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.45.+h Stimulated emission

Fast and slow surface electrons in HgCdTe

P. R. Emtage, T. A. Temofonte, A. J. Noreika, and C. F. Seiler

Appl. Phys. Lett. 54, 2015 (1989); http://dx.doi.org/10.1063/1.101199 (3 pages) | Cited 4 times

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Two groups of interface electrons, one of very high mobility (105 cm2 /V s), have been found in p‐type Hg1−x Cdx Te of low band gap (x≤0.2) from studies of the Hall effect up to 50 kG. Both groups are associated with the growth interface. The number of electrons in each group changes rapidly with temperature down to 15 K, causing anomalies in the low‐field Hall coefficient.
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73.25.+i Surface conductivity and carrier phenomena
73.61.Ga II-VI semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.20.-r Electron states at surfaces and interfaces
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