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15 May 1989

Volume 54, Issue 20, pp. 1947-2042

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Temperature dependence of the photoinduced EL2∗→EL20 recovery process observed by infrared absorption

D. W. Fischer and M. O. Manasreh

Appl. Phys. Lett. 54, 2018 (1989); http://dx.doi.org/10.1063/1.101178 (3 pages) | Cited 12 times

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The infrared absorption technique is used to measure the photoinduced recovery of the EL2 defect from its metastable state (EL2∗) to its normal state (EL20) in semi‐insulating GaAs. This recovery is induced by irradiating photoquenched samples with 0.90 or 1.46 eV light for 60 min at various temperatures between 10 and 110 K. The recovery process is found to be highly temperature and sample dependent. It is concluded that the results are related to the presence of other defects and impurities (traps) which interact with EL2 at low temperatures.
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71.55.Eq III-V semiconductors
78.30.Fs III-V and II-VI semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Device quality Hg1−xCdxTe material by low‐temperature precracking metalorganic chemical vapor deposition

P.‐Y. Lu, L. M. Williams, S. N. G. Chu, and M. H. Ross

Appl. Phys. Lett. 54, 2021 (1989); http://dx.doi.org/10.1063/1.101179 (2 pages) | Cited 3 times

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We report properties of device quality Hg1−xCdxTe grown by a precracking metalorganic chemical vapor deposition technique. The refinement of the low‐temperature growth process and a higher purity metalorganic mercury source enable us to obtain material which has a carrier concentration of 2×1015 cm−3 and mobility as high as 330 000 cm2/V s. Infrared transmission spectra and the photoluminescence measurements obtained from this material will be presented. With further development in the synthetic route of the metalorganic mercury source, further improvement in the purity of the Hg1−xCdxTe is possible.
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73.61.Ga II-VI semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.55.-a Thin film structure and morphology

Spectrally dependent photocurrent measurements in n+‐n‐n+ heterostructure devices

E. S. Snow, S. W. Kirchoefer, and O. J. Glembocki

Appl. Phys. Lett. 54, 2023 (1989); http://dx.doi.org/10.1063/1.101180 (3 pages) | Cited 9 times

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Photocurrent measurements are shown to be a useful tool for characterizing charge‐injecting heterostructure devices under bias. The measurements rely on a large photoconductive gain mechanism which operates in single‐barrier, double‐barrier, and superlattice devices. Photocurrent measurements on a set of superlattice doping interface devices indicate the presence of charge domains and an interesting electric field‐screening phenomenon. These phenomena are not evident in the current versus voltage data and emphasize the importance of using optical probes to characterize electronic devices.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Pz Photoconduction and photovoltaic effects
73.61.Ey III-V semiconductors
85.30.De Semiconductor-device characterization, design, and modeling

Optical studies of InxGa1−xAs/GaAs strained‐layer quantum wells

K. F. Huang, K. Tai, S. N. G. Chu, and A. Y. Cho

Appl. Phys. Lett. 54, 2026 (1989); http://dx.doi.org/10.1063/1.101181 (3 pages) | Cited 41 times

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Intense single‐peak photoluminescences of free‐exciton origin were observed in InxGa1−x As/GaAs strained‐layer quantum wells with x ranging from 0.09 to 0.20. Band lineups in these strained‐layer heterostructures were determined by the dependence of luminescence energy on the well thickness. The heterojunction discontinuity in the heavy hole valence bands was found to be about 30% of the gap difference and independent of x. Exciton‐phonon coupling was determined by temperature‐dependent absorption measurements and the coupling strength was found to be similar to that of unstrained GaAs/AlxGa1−x As quantum wells.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors
71.35.-y Excitons and related phenomena

Metalorganic chemical vapor deposition of high‐purity GaAs using tertiarybutylarsine

G. Haacke, S. P. Watkins, and H. Burkhard

Appl. Phys. Lett. 54, 2029 (1989); http://dx.doi.org/10.1063/1.101182 (3 pages) | Cited 35 times

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The growth of high‐purity gallium arsenide using tertiarybutylarsine (TBA) and trimethylgallium is reported. The availability of high‐purity TBA has permitted the growth of material with liquid‐nitrogen mobilities of up to 80 000 cm2/V s, the highest value yet reported for growth with any alkyl arsine. The residual donor species have been identified by magnetophotoluminescence.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Superconducting YBa2Cu3O7−x thin films on alkaline earth fluorides

Siu‐Wai Chan, E. W. Chase, B. J. Wilkens, and D. L. Hart

Appl. Phys. Lett. 54, 2032 (1989); http://dx.doi.org/10.1063/1.101507 (3 pages) | Cited 13 times

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Alkaline earth fluorides have low dielectric constants and large band gaps. In addition, they are chemically compatible with and several can be grown epitaxially on silicon and compound semiconductors. We have deposited YBa2Cu3O7−x thin films (200–500 nm thick) directly on (001) SrF2, (001) BaF2, (001) MgF2, and unoriented CaF2 single crystals by laser deposition. The substrate temperature was about 720 °C and the vacuum chamber was at 350 mTorr of oxygen. For this work, no additional annealing outside the deposition chamber was done after deposition. The deposited YBa2Cu3O7−x films were superconducting and exhibited transition temperatures Tc (R=0) of 83, 73, and 74 K on MgF2, SrF2, and BaF2, respectively. Structural studies by x‐ray diffraction showed that YBa2Cu3O7−x films on MgF2, SrF2, and BaF2 were polycrystalline and exhibited some (00L) textures. Deposition on CaF2 substrates resulted in yellowish, insulating films with Ca‐ and Ba‐rich interfacial reaction products.
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology

Influence of oxygen pressure on the characteristics of the KrF‐laser‐induced plasma plume created above an YBaCuO superconducting target

C. Girault, D. Damiani, J. Aubreton, and A. Catherinot

Appl. Phys. Lett. 54, 2035 (1989); http://dx.doi.org/10.1063/1.101413 (3 pages) | Cited 24 times

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The laser‐induced plasma plume created above an YBaCuO superconducting target by a KrF laser beam (248 nm) is investigated by time‐resolved spectroscopy under an oxygen atmosphere. The influence of the oxygen partial pressure on the ejection velocities of the ablated species and on the relaxation of atomic and molecular excited species is particularly studied.
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79.20.Ds Laser-beam impact phenomena
74.70.-b Superconducting materials other than cuprates

Reduction in magnetic field induced broadening of the resistive transition in laser‐deposited YBa2Cu3O7−x thin films on MgO

C. T. Rogers, S. Gregory, T. Venkatesan, B. J. Wilkens, X. D. Wu, A. Inam, B. Dutta, and M. S. Hegde

Appl. Phys. Lett. 54, 2038 (1989); http://dx.doi.org/10.1063/1.101508 (3 pages) | Cited 4 times

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The magnetic field induced broadening of the normal to superconducting resistive transition of YBa2Cu3O7−x thin films laser deposited on (100) MgO substrates for field oriented parallel to the c axis is found to be significantly reduced in comparison with that found previously in single crystals and in films deposited on SrTiO3. This reduction in broadening is associated with a high density of defects which, while causing a slight decrease in Tc and an increase in the zero‐field transition width, seems to provide strong vortex pinning centers that reduce flux creep.
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74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
74.25.N- Response to electromagnetic fields

Growth of textured films of Bi2Sr2CaCu2O8+x from KCl solution

G. Balestrino, A. Paoletti, P. Paroli, and P. Romano

Appl. Phys. Lett. 54, 2041 (1989); http://dx.doi.org/10.1063/1.101509 (2 pages) | Cited 17 times

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Films of Bi2Sr2CaCu2O8+x have been grown from KCl solution. Gadolinium gallium garnet substrates (1 1 1) oriented have been used. The films resulted highly textured with the c axis perpendicular to the substrate surface. The onset of the resistive transition was 85 K, while zero resistance was obtained at 50 K. This technique is particularly promising in view of the possibility to grow large epitaxial films of both the Bi2Sr2CaCu2O8+x and the Bi2Sr2Ca2Cu3O10+x phases.
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74.78.-w Superconducting films and low-dimensional structures
68.55.-a Thin film structure and morphology
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
74.70.-b Superconducting materials other than cuprates
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