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22 May 1989

Volume 54, Issue 21, pp. 2053-2161

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Nonradiative energy transfer in Nd:YAG—evidence for the correlated placement of ions

Stanley R. Rotman

Appl. Phys. Lett. 54, 2053 (1989); http://dx.doi.org/10.1063/1.101369 (3 pages) | Cited 10 times

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Analysis of data from Nd:YAG indicates a substantial experimental divergence from the standard theoretical results predicted for nonradiative energy transfer. A new model for correlated ion placement in the crystal is shown to completely explain the discrepancy.
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71.55.Eq III-V semiconductors
78.55.Hx Other solid inorganic materials
42.55.Rz Doped-insulator lasers and other solid state lasers
61.72.up Other materials

Wavelength division multiplexing light source with integrated quantum well tunable lasers and optical amplifiers

U. Koren, T. L. Koch, B. I. Miller, G. Eisenstein, and R. H. Bosworth

Appl. Phys. Lett. 54, 2056 (1989); http://dx.doi.org/10.1063/1.101164 (3 pages) | Cited 31 times

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We describe a photonic integrated circuit composed of three 1.5 μm wavelength multiple quantum well tunable lasers with a passive optical power combiner and an optical output amplifier. Independent channel operation with 1–2 mW/channel output power is demonstrated.
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42.82.-m Integrated optics
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
07.60.-j Optical instruments and equipment
42.79.-e Optical elements, devices, and systems

Determination of effective optical constants of magnetic multilayers

M. N. Deeter, D. Sarid, C. D. England, W. R. Bennett, and Charles M. Falco

Appl. Phys. Lett. 54, 2059 (1989); http://dx.doi.org/10.1063/1.101165 (3 pages) | Cited 2 times

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The effective optical and magneto‐optical constants of a series of Cu/Co multilayer films are determined experimentally and compared with a theoretical thin‐film model based on the bulk optical constants of Cu and Co. In the multilayer series, the atomic percentages of Cu and Co were kept fixed and the period varied from 0.4 to 13.6 nm. Deviations from bulk‐like behavior in the effective optical constants are observed for multilayers with periods less than 3 nm.
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78.66.Bz Metals and metallic alloys
73.61.At Metal and metallic alloys
78.20.Ls Magneto-optical effects

Optical and nonlinear optical properties of 4‐(N,N‐dimethylamino)‐3‐acetamidonitrobenzene single crystals

P. Kerkoc, M. Zgonik, K. Sutter, Ch. Bosshard, and P. Günter

Appl. Phys. Lett. 54, 2062 (1989); http://dx.doi.org/10.1063/1.101166 (3 pages) | Cited 22 times

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A method of growing high quality 4‐(N,N‐dimethylamino)‐3‐acetamidonitrobenzene (DAN) single crystals is presented. Crystal plates with dimensions of up to 10×5×2 mm3 were produced and optically characterized. The transparency region extends from 485 to 2270 nm. Large birefringence and strong dispersion of the refractive indices were measured allowing two branches of type I and two of type II phase‐matched second‐harmonic generation. From effective second‐order nonlinear optical susceptibilities measured along the branches all nonlinear susceptibilities were evaluated, the highest being d23 =(50±15) pm/V.
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78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
78.20.Fm Birefringence
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.70.-a Optical materials

Quadratic electro‐optic effect in polydiacetylene single crystals

B. I. Greene, M. Thakur, and J. Orenstein

Appl. Phys. Lett. 54, 2065 (1989); http://dx.doi.org/10.1063/1.101167 (3 pages) | Cited 6 times

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Direct measurements of the change in refractive index (Δn) as a function of applied electric field for polydiacetylene paratoluenesulfonate are reported. The magnitude of the effect is compared to that observed in GaAs, and a figure of merit with respect to device application is discussed.
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78.20.Jq Electro-optical effects
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Femtosecond all‐optical switching in AlGaAs waveguides using a time division interferometer

M. J. LaGasse, K. K. Anderson, H. A. Haus, and J. G. Fujimoto

Appl. Phys. Lett. 54, 2068 (1989); http://dx.doi.org/10.1063/1.101168 (3 pages) | Cited 26 times

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All‐optical switching of femtosecond pulses in AlGaAs waveguides is investigated using a novel time division interferometric technique which eliminates thermal imbalances. In addition to an instantaneous refractive index nonlinearity, free‐carrier generation via two‐photon absorption produces a response of several hundred picoseconds duration.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Gn Optical waveguides and couplers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Low‐pressure hollow cathode switch triggered by a pulsed electron beam emitted from ferroelectrics

H. Gundel, H. Riege, J. Handerek, and K. Zioutas

Appl. Phys. Lett. 54, 2071 (1989); http://dx.doi.org/10.1063/1.101169 (3 pages) | Cited 50 times

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A new type of low‐pressure gas switch is described. The switch is triggered by an electron beam that is emitted from the surface of a ferroelectric sample. The electron beam is generated within the hollow cathode and ejected through a hole of arbitrary shape into the main gap of the switch. The beam current and the electron energy can be chosen such that breakdown is achieved with small jitter. The switch with its ferroelectric trigger requires neither heating nor an auxiliary gas discharge. The fast spontaneous polarization change ΔPs, which is the cause of electron emission, is induced by a high‐voltage pulse from an electronic switching circuit.
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52.75.Kq Plasma switches (e.g., spark gaps)
52.80.-s Electric discharges
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
07.50.Ek Circuits and circuit components

Intermetallic structure of laser reflowed Cu/Pb‐Sn solder joints

L. E. Felton, A. D. Selsley, and P. J. Ficalora

Appl. Phys. Lett. 54, 2074 (1989); http://dx.doi.org/10.1063/1.101563 (2 pages) | Cited 4 times

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A Nd:YAG laser was used to reflow Cu/Pb‐Sn solder joints. The joints were reflowed with 60 W, 1 s laser pulse. The resulting intermetallic microstructure was examined with scanning electron microscopy, energy dispersive x‐ray analysis, and x‐ray diffraction. In addition to the intermetallic layer expected to form at the solder‐base metal interface, an intermetallic precipitate was found to form in the bulk solder. X‐ray diffraction data established the identity of the intermetallic as η‐Cu6Sn5.
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81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
81.20.-n Methods of materials synthesis and materials processing
81.30.-t Phase diagrams and microstructures developed by solidification and solid-solid phase transformations

Characterization of a top‐illuminated p‐i‐n diode with an indium tin oxide contact

M. Zirngibl, Y. Hu, R. Sachot, and M. Ilegems

Appl. Phys. Lett. 54, 2076 (1989); http://dx.doi.org/10.1063/1.101170 (3 pages) | Cited 1 time

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The characteristics of a new type of AlGaAs/GaAs p‐i‐n photodiode are reported. Indium tin oxide forms the contact to the upper AlGaAs layer and serves also as an antireflection coating. Our devices show very low dark currents (20–300 pA at 5 V reverse bias for devices of 20–200 μm diameter), high speed (full width at half maximum <60 ps), and high sensitivity (61% external quantum efficiency) at 1 V bias. A microwave analysis of the diode is presented.
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85.60.Dw Photodiodes; phototransistors; photoresistors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.50.Mx High-frequency effects; plasma effects
85.30.De Semiconductor-device characterization, design, and modeling

Amorphous silicon thin‐film transistors with two‐layer gate insulator

Nam‐Deog Kim, Choong‐Ki Kim, Jin Jang, and Choochon Lee

Appl. Phys. Lett. 54, 2079 (1989); http://dx.doi.org/10.1063/1.101171 (3 pages) | Cited 2 times

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Hydrogenated amorphous silicon (a‐Si:H) thin‐film transistors (TFTs) which utilize two layers of amorphous silicon nitride with different composition as a gate insulator have been studied. The field‐effect mobility, subthreshold slope, and stability of an a‐Si:H TFT are enhanced by inserting a thin silicon‐rich nitride layer between the a‐Si:H and the gate insulator. The improvement of these characteristics appears to be due to both the decrease of the interface state density between the a‐Si:H and the top silicon‐rich nitride layer, and the good dielectric quality of the bottom nitride layer.
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85.30.Tv Field effect devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Optical evidences of assisted tunneling in a biased double quantum well structure

H. W. Liu, R. Ferreira, G. Bastard, C. Delalande, J. F. Palmier, and B. Etienne

Appl. Phys. Lett. 54, 2082 (1989); http://dx.doi.org/10.1063/1.101172 (3 pages) | Cited 41 times

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Experimental evidences of electron and hole resonant tunnelings are obtained in a biased double quantum well system using optical methods. Calculations of the defect‐induced tunneling rates are performed and compared with experiments.
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73.40.Gk Tunneling
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors

Polyiodide‐treated n‐WSe2/Au Schottky junctions

Gary Hodes

Appl. Phys. Lett. 54, 2085 (1989); http://dx.doi.org/10.1063/1.101510 (3 pages) | Cited 7 times

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Au/n‐WSe2 Schottky junctions usually exhibit linear dark current‐voltage characteristics, apparently dominated by structural defects, and low open circuit photovoltages. After treatment of the WSe2 with polyiodide in a liquid junction configuration and subsequent deposition of Au, good diode characteristics and high Voc are obtained which are similar to those exhibited by WSe2/polyiodide liquid junctions. The role of the polyiodide treatment is ascribed to defect passivation. The barrier height of the WSe2/Au junction (∼1.0 eV) is particularly high for a semiconductor of Eg=1.2 eV and supports recent work which claims that MoS2 (similar structure to WSe2) forms Schottky junctions which behave close to the Schottky limit.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Mr Semiconductor-electrolyte contacts
81.40.Rs Electrical and magnetic properties related to treatment conditions
72.40.+w Photoconduction and photovoltaic effects

In situ investigation of the optoelectronic properties of transparent conducting oxide/amorphous silicon interfaces

B. Drevillon, Satyendra Kumar, P. Roca i Cabarrocas, and J. M. Siefert

Appl. Phys. Lett. 54, 2088 (1989); http://dx.doi.org/10.1063/1.101511 (3 pages) | Cited 23 times

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Transparent conducting oxide (TCO)/hydrogenated amorphous silicon (a‐Si:H) interfaces are investigated combining kinetic ellipsometry and Kelvin probe measurements. It is shown that the correlation between both in situ techniques allows a detailed description of the optoelectronic behavior of these interfaces. The Schottky barrier at the TCO/a/Si:H interfaces, as revealed by Kelvin probe measurements, is correlated with the chemical reduction of the TCO surface during the early stage of a:Si:H growth, as evidenced by kinetic ellipsometry. In particular, indium tin oxide (ITO) and SnO2 are found to be reduced by the silane plasma at 250 °C. On the countrary, ZnO is found highly resistant upon plasma reduction. The influence of the substrate temperature during a‐Si:H deposition is analyzed. Finally, the technical consequences of this study are outlined.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.50.-h Electronic transport phenomena in thin films
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Silicon segregation in delta‐doped GaAs characterized by Auger electron spectroscopy

Chris Webb

Appl. Phys. Lett. 54, 2091 (1989); http://dx.doi.org/10.1063/1.101173 (3 pages) | Cited 11 times

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We have used Auger electron spectroscopy as a direct measure of silicon segregation in molecular beam epitaxy grown delta‐doped GaAs. We find that this technique allows very precise detection of Si segregation. Spectra have been obtained, as a function of temperature, from samples in which Si has been deposited in the normal delta doping manner and then typically 10 Å of GaAs deposited on top. Si segregation is manifested at higher temperatures by the absence of the expected attenuation of the Auger signal. Our results show that Si segregation in GaAs is measurable at temperatures above 520 °C.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Fx Diffusion; interface formation

Amphoteric native defects in semiconductors

W. Walukiewicz

Appl. Phys. Lett. 54, 2094 (1989); http://dx.doi.org/10.1063/1.101174 (3 pages) | Cited 129 times

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We show that a new concept of amphoteric native defects with strongly Fermi level dependent defect formation energy provides the basis for a unified explanation of a large variety of phenomena in semiconductors. Formation of Schottky barriers, particle irradiation induced compensation, doping‐induced superlattice intermixing, and limits of free‐carrier concentration find for the first time a common simple explanation.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.50.Bk General theory, scattering mechanisms
73.30.+y Surface double layers, Schottky barriers, and work functions
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Negative photoconductivity due to carrier drag in GaAs/AlGaAs quantum wells

S. Juen, R. A. Höpfel, and A. C. Gossard

Appl. Phys. Lett. 54, 2097 (1989); http://dx.doi.org/10.1063/1.101175 (3 pages) | Cited 1 time

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Negative photoconductivity caused by ‘‘carrier drag’’ is experimentally verified for the first time. In p‐modulation‐doped GaAs/AlGaAs quantum wells carrier drag, leading to ‘‘negative absolute mobility’’ of injected minority electrons, results in a decrease of the total in‐plane current in the quantum wells. The temperature dependence of the measured differential photoconductivity quantitatively agrees with the expected behavior due to the effect of electron‐hole scattering.
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73.50.Pz Photoconduction and photovoltaic effects
73.61.Ey III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Mobility of the two‐dimensional electron gas in AlGaAs/GaAs heterostructures at low electron densities

A. Gold

Appl. Phys. Lett. 54, 2100 (1989); http://dx.doi.org/10.1063/1.101176 (3 pages) | Cited 32 times

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We present theoretical results on the mobility of a two‐dimensional electron gas in AlxGa1−xAs/GaAs heterostructures for remote impurity doping and homogeneous background doping. The threshold transport, recently found experimentally by C. Jiang, D. C. Tsui, and G. Weimann [Appl. Phys. Lett. 53, 1533 (1988)], is interpreted as a metal–insulator transition due to multiple scattering effects.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.25.+i Surface conductivity and carrier phenomena
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Dn Low-field transport and mobility; piezoresistance

Phase coherence length of electron waves in narrow AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation

Toshiro Hiramoto, Kazuhiko Hirakawa, Yasuhiro Iye, and Toshiaki Ikoma

Appl. Phys. Lett. 54, 2103 (1989); http://dx.doi.org/10.1063/1.101177 (3 pages) | Cited 43 times

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The phase coherence length Lϕ of electron waves in the one‐dimensional weak localization regime was studied in selectively doped AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation. Estimated Lϕ by fitting the modified weak localization theory to the data is ∼1.2 μm at 0.3 K, nine times longer than in the n‐GaAs wires. This difference is well explained by the mobility dependence of Lϕ, and shows the advantage of selectively doped structures to obtain long Lϕ. Lϕ increased with decreasing temperature and saturated below ∼3 K, indicating the existence of temperature‐independent phase breaking mechanisms.
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73.20.Fz Weak or Anderson localization
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.61.Ey III-V semiconductors

Assessment of the ionized EL2 fraction in semi‐insulating GaAs

J. S. Blakemore, L. Sargent, R‐S. Tang, and E. M. Swiggard

Appl. Phys. Lett. 54, 2106 (1989); http://dx.doi.org/10.1063/1.101163 (3 pages) | Cited 11 times

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Both optical and electrical methods were used to provide separate evaluations of the fraction Pi of EL2 defect donors which have lost an electron. The semi‐insulating GaAs which permitted these assessments had a large enough fraction of the EL2 compensated (by CAs acceptors) to make this a sensitive test. Room‐temperature Hall effect data, analyzed with an ambipolar correction, indicated that Pi ≂0.34 in material from a vertical‐zone grown crystal, while near‐infrared optical absorption could be modeled on a superposition of EL2 photoionization and photoneutralization to yield Pi ≂0.35 in the same crystal. The presence of compensating CAs acceptors was verified by local mode vibrational absorption.
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71.55.Eq III-V semiconductors
72.20.My Galvanomagnetic and other magnetotransport effects
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
72.80.Ey III-V and II-VI semiconductors

Growth flux ratio dependence of microwave devices in molecular beam epitaxy

Y. C. Chou, C. T. Lee, F. Y. Juang, C. C. Chang, and K. Chou

Appl. Phys. Lett. 54, 2109 (1989); http://dx.doi.org/10.1063/1.101143 (3 pages)

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The effects of beam equivalent pressure ratio PAs4/PGa on electrical and microwave performance of GaAs low‐noise metal‐semiconductor field‐effect transistors grown by molecular beam epitaxy were demonstrated. From experimental results, superior performances were achieved at the minimum beam equivalent pressure ratio of 30 under arsenic‐stabilized condition. The optimum noise figure and its associated gain were attributed to the higher quality of the molecular beam epitaxial material at optimal growth conditions. An explanation of the experimental results was also proposed.
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85.30.Tv Field effect devices
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Electrical resistivity of thin epitaxial NiAl buried in (Al,Ga)As

N. Tabatabaie, T. Sands, J. P. Harbison, H. L. Gilchrist, L. T. Florez, and V. G. Keramidas

Appl. Phys. Lett. 54, 2112 (1989); http://dx.doi.org/10.1063/1.101144 (3 pages) | Cited 10 times

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We present the first measurements of electrical resistivity for NiAl layers in (Al,Ga)As/NiAl/(Al,Ga)As semiconductor/metal/semiconductor monocrystalline heterostructures. Layer thicknesses in the range 1.5–100 nm have been studied and all were found to be electrically continuous. Four separate components of resistivity are identified and discussed. The room‐temperature resistivity is dominated by electron‐phonon and interface‐roughness scattering. For films 3 nm in thickness and above, the composition of the NiAl compound can be inferred from the phonon resistivity, while the residual resistivity yields the probability of specular reflection from the interfaces. This parameter is approximately 20% for the films studied.
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73.40.Vz Semiconductor-metal-semiconductor structures
73.61.At Metal and metallic alloys
73.50.Bk General theory, scattering mechanisms

Is intrinsic bistability really intrinsic tristability?

D. D. Coon, K. M. S. V. Bandara, and H. Zhao

Appl. Phys. Lett. 54, 2115 (1989); http://dx.doi.org/10.1063/1.101145 (3 pages) | Cited 12 times

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The issue of intrinsic bistability in resonant tunneling devices is examined analytically and quantitatively. The results indicate that the putative argument for intrinsic bistability is actually an argument for intrinsic tristability. If a third stable configuration really exists, it might be hard to access experimentally although its existence could have consequences for high‐speed device applications. If an intrinsic bistable regime is ipso facto a tristable regime, then an experimental search for a third stable configuration could provide persuasive evidence for the physical mechanism commonly advocated as the basis for intrinsic bistability.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Gk Tunneling

Rechargeable E′ centers in sputter‐deposited silicon dioxide films

M. E. Zvanut, F. J. Feigl, W. B. Fowler, J. K. Rudra, P. J. Caplan, E. H. Poindexter, and J. D. Zook

Appl. Phys. Lett. 54, 2118 (1989); http://dx.doi.org/10.1063/1.101512 (3 pages) | Cited 30 times

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An electron trapping instability in silicon dioxide films sputtered onto silicon substrates was analyzed by metal‐oxide‐semiconductor electrical methods and electron paramagnetic resonance (EPR), and was compared with an E′ defect model from molecular orbital cluster calculations. This comparison indicates that an E′ defect may well be responsible for the observed trapping instability, since electrically measured trap filling and emptying was quantitatively correlated with a reversible variation in the EPR signal magnitude. The specific model proposed for this defect is a ‘‘surface‐like’’ or hemi‐E′ center, O3≡Si−, which upon loss of an electron becomes O3≡Si+ and relaxes towards a planar configuration. The relaxation energy associated with the restoration of the original configuration is manifested as a hysteresis in the electrical trap filling and emptying cycle.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators

Novel pseudomorphic high electron mobility transistor structures with GaAs‐In0.3Ga0.7As thin strained superlattice active layers

J. M. Ballingall, P. Ho, G. J. Tessmer, P. A. Martin, Nathan Lewis, and Ernest L. Hall

Appl. Phys. Lett. 54, 2121 (1989); http://dx.doi.org/10.1063/1.101146 (3 pages) | Cited 18 times

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The thin strained superlattice (TSSL) concept is introduced as a means for extending the practical range of application for pseudomorphic Inx Ga1−x As on GaAs. Growth and characterization results are presented for pseudomorphic high electron mobility transistor structures with GaAs‐In0.3 Ga0.7 As TSSL active layers grown by molecular beam epitaxy. The TSSLs are composed of three periods of GaAs(15 Å)‐ In0.3 Ga0.7 As(h2 ), where h2 ranges from 30 to 52 Å. Modulation doping of the TSSLs is provided by atomic planar‐doped Al0.3 Ga0.7 As overlayers with 45 Å undoped spacers. 77 K Hall effect and transmission electron microscopy reveal that relatively thick TSSLs can be grown with high electronic and structural quality, comparable to much thinner In0.3 Ga0.7 As single quantum wells. Results are compared with a model for critical layer thickness and discussed in light of in situ reflection high‐energy electron diffraction measurements.
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85.30.De Semiconductor-device characterization, design, and modeling
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.Ey III-V semiconductors
73.50.Dn Low-field transport and mobility; piezoresistance

Efficient light emission by impact ionization in single‐barrier tunneling devices

E. S. Snow, S. W. Kirchoefer, P. M. Campbell, and O. J. Glembocki

Appl. Phys. Lett. 54, 2124 (1989); http://dx.doi.org/10.1063/1.101147 (3 pages) | Cited 8 times

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Efficient band‐gap electroluminescence has been observed in n+‐n−‐n+ single‐barrier tunneling devices. The electroluminescence arises from holes created by the impact ionization of electrons in large electric fields. From the voltage dependence of the electroluminescence the electric field dependence of the impact ionization rate is determined. Comparisons to theory are made.
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78.60.Fi Electroluminescence
73.50.Fq High-field and nonlinear effects
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.61.Ey III-V semiconductors
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