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29 May 1989

Volume 54, Issue 22, pp. 2171-2277

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InP/InGaAsP buried mesa ridge laser: A new ridge laser with reduced leakage currents

H. Jung and E. Schlosser

Appl. Phys. Lett. 54, 2171 (1989); http://dx.doi.org/10.1063/1.101155 (3 pages) | Cited 4 times

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We describe a new kind of InP/InGaAsP buried ridge laser—the buried mesa ridge laser. A simple calculation shows that this laser structure has considerably reduced leakage currents compared with the conventional buried ridge laser. The fabrication steps are described. The light‐current characteristic curve measured on the InP/InGaAsP buried mesa ridge laser shows a linear behavior up to 40 mW, the highest value reported so far for the buried ridge type laser.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Dependence of emission wavelength on cavity length and facet reflectivities in multiple quantum well semiconductor lasers

J. Z. Wilcox, S. Ou, J. J. Yang, M. Jansen, and G. L. Peterson

Appl. Phys. Lett. 54, 2174 (1989); http://dx.doi.org/10.1063/1.101156 (3 pages) | Cited 3 times

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The spectral emission characteristics of multiple quantum well semiconductor lasers of the Fabry–Perot type are a strong function of laser cavity length and mirror reflectivities. 15 nm theoretically predicted wavelength shifts were validated experimentally. This has immediate applications in the development of semiconductor laser‐pumped solid‐state lasers, where accurate control of the semiconductor laser pump spectral emission is essential.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers

Junction field‐effect transistor single quantum well optical waveguide modulator employing the two‐dimensional Moss–Burstein effect

J. H. Abeles, W. K. Chan, E. Colas, and A. Kastalsky

Appl. Phys. Lett. 54, 2177 (1989); http://dx.doi.org/10.1063/1.101157 (3 pages) | Cited 6 times

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A modulation‐doped junction field‐effect transistor incorporating an optical waveguide under the gate modulates light by the carrier band‐filling effect (two‐dimensional Moss–Burstein effect) in a single quantum well, achieving a 5:1 extinction ratio in a 250‐μm‐long waveguide for 4 V reverse gate‐source bias Vgs swing and 0 V drain‐source bias Vds. Similar performance is obtained over a 16 nm spectral range. A novel band‐edge transparency effect is observed for Vds>0 allowing an extinction ratio of 10:1, corresponding to a change in absorption of 92 cm−1 to be obtained through band‐gap dilation by hot electrons at biases of Vds =8 V. Below‐band‐gap refractive index modulation of 1.6×10−3 is obtained for a Vgs swing of 2.4 V. The novel junction field‐effect transistor optical modulator also functions as a photovoltaic or photoconductive optical detector, a transistor, and a light‐emitting diode.
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85.30.Tv Field effect devices
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Jb Light-emitting devices

Time‐resolved extreme ultraviolet emission from a highly ionized lithium capillary discharge

Mario C. Marconi and Jorge J. Rocca

Appl. Phys. Lett. 54, 2180 (1989); http://dx.doi.org/10.1063/1.101158 (3 pages) | Cited 17 times

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A fast discharge current pulse (50 ns FWHM) was used to create a highly ionized plasma in a 500‐μm‐diam lithium hydride capillary 3.8 cm in length. Time‐resolved extreme ultraviolet spectra of the capillary plasma show simultaneous line emission from highly ionized (O VI) and singly ionized (O II) species, indicating the existence of a hot‐core plasma (Te>25 eV) surrounded by a significantly cooler plasma near the walls. The intensity of the 72.9 nm emission corresponding to the Li III 3–2 transition was observed to increase during the decay of the current pulse, consistent with excitation by electron‐ion recombination. The results are relevant to the possibility of amplification of extreme ultraviolet radiation in a discharge‐pumped device.
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52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.50.Dg Plasma sources
52.80.Yr Discharges for spectral sources (including inductively coupled plasma)
42.55.-f Lasers

Resonant optical transmission and coupling in phase‐locked diode laser arrays of antiguides: The resonant optical waveguide array

D. Botez, L. J. Mawst, G. Peterson, and T. J. Roth

Appl. Phys. Lett. 54, 2183 (1989); http://dx.doi.org/10.1063/1.101159 (3 pages) | Cited 28 times

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Uniform linear arrays of antiguides have 100% optical transmission between elements when the interelement spacing is an integer number of leaky wave half‐wavelengths in the lateral direction. Resonant in‐phase‐mode and out‐of‐phase‐mode coupling occurs when the number of half‐wavelengths is odd and even, respectively. Such devices are called resonant optical waveguide (ROW) arrays. The discrimination between the resonant array mode and adjacent array modes reaches a maximum in close proximity to the resonance. An AlGaAs/GaAs ROW diode laser array operating close to resonance is demonstrated. Devices with virtually uniform near‐field intensity profiles operate in stable, diffraction‐limited in‐phase modes to drive levels in excess of three times threshold.
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42.55.Px Semiconductor lasers; laser diodes
42.79.Gn Optical waveguides and couplers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Far‐field characteristics of optically pulsed millimeter wave antennas

Charles R. Lutz and Alfred P. DeFonzo

Appl. Phys. Lett. 54, 2186 (1989); http://dx.doi.org/10.1063/1.101160 (3 pages) | Cited 2 times

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We describe a novel technique for measuring transient far‐field radiation patterns emitted from optically pulsed, broadband, integrated antennas using photoconductive sampling methods. These devices are capable of generating and radiating short electrical pulses which contain frequency components exceeding 80 GHz. The far‐field patterns in both the E and H planes are observed to consist of single, forward directed lobes which are shown to have a cosine‐squared dependence. In addition, there are no indications of any additional secondary sidelobes in either of the principal planes.
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84.40.Ba Antennas: theory, components and accessories
85.60.-q Optoelectronic devices
41.20.Jb Electromagnetic wave propagation; radiowave propagation

Dynamically programmable self‐aligning optical interconnect with fan‐out and fan‐in using self‐pumped phase conjugation

Mark Cronin‐Golomb

Appl. Phys. Lett. 54, 2189 (1989); http://dx.doi.org/10.1063/1.101161 (3 pages) | Cited 5 times

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A dynamically reprogrammable optical interconnect is demonstrated using temporally multiplexed writing beams in photorefractive double phase conjugation to achieve arbitrary fan‐out and fan‐in. Applications to neural networks and image transmission through thick distortions are discussed.
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42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Gn Optical waveguides and couplers
42.30.Va Image forming and processing
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Room‐temperature pseudomorphic InxGa1−xAs/GaAs quantum well surface‐emitting lasers at 0.94–1.0 μm wavelengths

K. F. Huang, K. Tai, J. L. Jewell, R. J. Fischer, S. L. McCall, and A. Y. Cho

Appl. Phys. Lett. 54, 2192 (1989); http://dx.doi.org/10.1063/1.101162 (3 pages) | Cited 14 times

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We report room‐temperature lasing at 0.94–1.002 μm in high‐finesse Fabry– Perot resonators with Inx Ga1−x As/GaAs multiple quantum well active layers (x=0.18–0.2). The quantum wells and AlAs/GaAs quarter‐wave stack mirrors were epitaxially grown on GaAs substrates. Optically pumping with 0.875 μm, 10 ps pulses yielded a threshold of 15 pJ incident pulse energy. The equivalent threshold current density is about 26 μA/μm2 (2.6 kA/cm2 ), suggesting ultralow thresholds in micrometer‐size devices. At the lasing wavelengths the GaAs substrates are essentially transparent allowing the possibility of integrating micro‐optic lenslets on the substrate backsides for light collection. Nonlinear optical gating of 1.064 μm light was also achieved in these structures.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Image current guiding of a relativistic electron beam in a foil focusing system

S. Humphries, Carl Ekdahl, and D. M. Woodall

Appl. Phys. Lett. 54, 2195 (1989); http://dx.doi.org/10.1063/1.101142 (3 pages) | Cited 6 times

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Intense relativistic electron beams can be focused by arrays of transverse conducting foils or meshes. The meshes cancel beam‐generated radial electric fields, allowing a self‐pinched equilibrium. The experiments reported confirm that foil focusing systems can also steer high‐current beams. We applied a dipole perturbation field to deflect a 3.8 kA, 280 keV beam in a foil array. We found that image current forces centered the beam in the transport pipe. The measured deflection was more than an order of magnitude smaller than the predicted value for single electron orbits. The results show that foil focusing may have application to recirculating accelerators for high‐current electron beams.
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41.75.Ht Relativistic electron and positron beams
52.27.Ny Relativistic plasmas

Fabrication and structure of epitaxial Er silicide films on (111) Si

F. Arnaud d’Avitaya, A. Perio, J.‐C. Oberlin, Y. Campidelli, and J. A. Chroboczek

Appl. Phys. Lett. 54, 2198 (1989); http://dx.doi.org/10.1063/1.101517 (3 pages) | Cited 68 times

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We prepared Er silicide films on (111) Si by (1) deposition of Er and contact reaction at 380 °C or (2) vacuum codeposition of Er and Si maintaining the flux ratio close to 1:2. Subsequent annealing at temperatures up to 900 °C yielded monocrystalline, continuous layers, whose properties were examined by means of low‐energy electron diffraction, Auger spectroscopy (in situ) and (ex situ), x‐ray and high‐energy electron diffraction, and Rutherford backscattering. Method 2 was shown to give better results. The films had a hexagonal AlB2 structure with Si deficiency up to 20%, which is consistent with formerly published results on Si vacancy formation. We showed that the film structure had an additional periodicity of 15 Å along the 〈110〉 orientations of Si and of 6 Å along the 〈112〉 orientations of Si. We demonstrated a feasibility of Si reepitaxy on Er silicide deposited on (111) Si, thus fabricating a novel semiconductor/metal/semiconductor epitaxial heterostructure.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.40.Vz Semiconductor-metal-semiconductor structures

Existence of interstitialcy Zn atoms in GaAs:Zn grown by the liquid‐encapsulated Czochralski technique

T. Kitano, H. Watanabe, and J. Matsui

Appl. Phys. Lett. 54, 2201 (1989); http://dx.doi.org/10.1063/1.101123 (3 pages) | Cited 4 times

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Using the extended x‐ray absorption fine structure method, we have studied the local structures around Zn atoms in Zn‐doped GaAs crystal grown by the liquid‐encapsulated Czochralski technique. Zn atoms, whose concentration is about 2.4×1018 cm−3, have the first nearest neighbor atoms at a very short distance of about 1.95 Å and the second nearest neighbor atoms at a distance of about 3.15 Å. The Zn atom configuration forms ‘‘interstitialcy’’, not substitutional, tetrahedral, or hexagonal sites. As the Zn concentration increases, however, Zn atoms have a tendency to occupy substitutional sites.
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61.72.jd Vacancies
61.72.jj Interstitials
61.72.U- Doping and impurity implantation
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Early stages of plasma synthesis of diamond films

R. Meilunas, M. S. Wong, K. C. Sheng, R. P. H. Chang, and R. P. Van Duyne

Appl. Phys. Lett. 54, 2204 (1989); http://dx.doi.org/10.1063/1.101124 (3 pages) | Cited 48 times

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The early stages of diamond film nucleation and growth in a microwave plasma have been studied in detail as a function of important deposition parameters. The influence of the substrate temperature on the diamond nucleation rate, quality, and final film morphology has been elucidated through Raman spectroscopy and scanning electron microscopy measurements. Using transmission infrared spectroscopy and x‐ray diffraction, it is found that a carbide layer is initially formed on the substrate prior to the growth of the diamond film. Furthermore, the final film morphology is also a strong function of the plasma starting condition, the gas composition, and the substrate temperature.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Effect of growth conditions on the stability of α‐Sn grown on CdTe by molecular beam epitaxy

J. L. Reno and L. L. Stephenson

Appl. Phys. Lett. 54, 2207 (1989); http://dx.doi.org/10.1063/1.101125 (3 pages) | Cited 15 times

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The effect of growth conditions on the stability of α‐Sn films grown by molecular beam epitaxy on CdTe is studied. The growth conditions considered are substrate orientation, thickness, growth rate, and substrate temperature. The transition temperature from α‐Sn to β‐Sn, as determined by optical microscopy, is used as the measure of stability. It is shown that CdTe(110) is a somewhat better orientation than CdTe(100), and CdTe(111)B is totally unacceptable for the growth by molecular beam epitaxy of α‐Sn films. The transition temperature from α‐Sn to β‐Sn shows a dependence on the total film thickness, with thinner films having a somewhat higher transition temperature than thicker. The quality of the films is the best when the growth rate is about 0.5 Å/s and the growth temperature is about 75 °C. Since the transition from α‐Sn to β‐Sn starts at defects in the film, improving the quality of the film by lowering the growth rate and raising the growth temperature raises the transition temperature.
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68.60.Dv Thermal stability; thermal effects
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology

Texture analysis of Al/SiO2 films deposited by a partially ionized beam

D. B. Knorr and T.‐M. Lu

Appl. Phys. Lett. 54, 2210 (1989); http://dx.doi.org/10.1063/1.101126 (3 pages) | Cited 19 times

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The preferred crystallographic orientation, or texture, of aluminum films deposited on oxidized silicon by evaporation and by partially ionized beam (PIB) deposition is studied. Texture is quantified by the x‐ray diffraction pole figure technique. The pole figures reveal important details of the crystallite distribution not quantifiable by simply taking the 2θ scan. It is found that the films deposited by the PIB technique possess a very strong {111} fiber texture whose strength can be controlled by deposition conditions. Correlation between the strength of the texture and the electromigration lifetime is discussed.
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68.55.-a Thin film structure and morphology
66.30.Qa Electromigration
85.40.Ls Metallization, contacts, interconnects; device isolation

Coherent Zener tunneling in InAs electron inversion layers

U. Kunze

Appl. Phys. Lett. 54, 2213 (1989); http://dx.doi.org/10.1063/1.101127 (2 pages) | Cited 3 times

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In an electron inversion layer on a degenerate p‐type InAs substrate, a resonance effect is observed in tunneling from the two‐dimensional electron gas into the continuum of valence states. The effect is confirmed by additional magnetotunneling measurements.
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73.40.Gk Tunneling
73.30.+y Surface double layers, Schottky barriers, and work functions
72.20.My Galvanomagnetic and other magnetotransport effects
79.60.Dp Adsorbed layers and thin films
79.70.+q Field emission, ionization, evaporation, and desorption

High‐field mobility of light holes in strained quantum wells

Harold P. Hjalmarson

Appl. Phys. Lett. 54, 2215 (1989); http://dx.doi.org/10.1063/1.101128 (3 pages) | Cited 3 times

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The small mass of light holes in strained quantum wells leads to high mobility at low fields. However, at high fields, the holes become hot and populate the heavy hole band, thereby greatly reducing their mobility. An analysis shows that the high‐field mobility primarily depends on Δ, the strain splitting of the light and heavy holes, and ℏω0, the optical phonon energy. If Δ<ℏω0, the light holes transfer to the heavy hole band at relatively low power and small fields. If Δ≊ℏω0, the low‐field mobility is greatly enhanced without producing negative differential mobility at high fields. If Δ>ℏω0, the high mobility persists until the applied power per carrier P exceeds a characteristic power P0 . Above this power, negative differential mobility (a Gunn effect) occurs when the light holes transfer to the heavy hole band. For thin p‐doped In0.2 Ga0.8 As/GaAs single‐strained quantum wells, Monte Carlo calculations show that P0 ≊5×10−8 W/carrier.
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73.50.Fq High-field and nonlinear effects
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors

Observations of barrier recombination in GaAs‐AlGaAs quantum well structures

P. Blood, E. S‐M. Tsui, and E. D. Fletcher

Appl. Phys. Lett. 54, 2218 (1989); http://dx.doi.org/10.1063/1.101129 (3 pages) | Cited 8 times

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Using laser structures with a window in the contact stripe, we have observed recombination from the wells and barrier regions of GaAs‐AlGaAs quantum well lasers. The magnitude of the ratio of emission intensities from the barrier and the well, and the dependence of this ratio upon injection current, are in good agreement with a calculation in which the carrier populations in well and barrier are in thermal equilibrium at the lattice temperature (300 K).
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.60.Fi Electroluminescence
42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices

Field‐induced decoupling of quantized levels and blue shift of absorption edge in a potential inserted quantum well structure

H. Onose, H. Yoshimura, and H. Sakaki

Appl. Phys. Lett. 54, 2221 (1989); http://dx.doi.org/10.1063/1.101130 (3 pages) | Cited 17 times

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The electric field induced localization and decoupling of quantized levels (FILD) in double quantum wells is studied both theoretically and experimentally and is shown to result in a novel blue shift of optical absorption peaks. The absorption edge of doubly coupled 54 Å GaAs wells separated by a 5.7 Å AlAs inserted barrier is found to shift by 8 meV toward the higher energy under a moderate field (>30 kV/cm). Considering the field‐induced variation of quantized levels and excitonic effect, the observed shifts of most peaks are well explained by the simple effective mass theory. Device applications of this novel electro‐optic effect (FILD) are also discussed.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.60.-q Optoelectronic devices
73.61.Ey III-V semiconductors

Thin‐film magnetic patterns in an external field

Paul Bryant and Harry Suhl

Appl. Phys. Lett. 54, 2224 (1989); http://dx.doi.org/10.1063/1.101131 (3 pages) | Cited 21 times

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The behavior of ideally soft ferromagnetic films in the presence of a weak coplanar magnetic field is explored by the method of characteristics. Solutions are found which have no internal field or in some cases have field‐free zones. Results are specifically given for circular and elliptic disks, the infinite strip, and the semi‐infinite plane. The disk solutions have internal domain walls.
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75.70.Ak Magnetic properties of monolayers and thin films
75.70.Kw Domain structure (including magnetic bubbles and vortices)
75.30.Cr Saturation moments and magnetic susceptibilities

Determination of energy‐band dispersion curves in strained‐layer structures

E. D. Jones, S. K. Lyo, I. J. Fritz, J. F. Klem, J. E. Schirber, C. P. Tigges, and T. J. Drummond

Appl. Phys. Lett. 54, 2227 (1989); http://dx.doi.org/10.1063/1.101367 (3 pages) | Cited 35 times

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Simultaneous measurement of both the conduction‐ and valence‐band dispersion curves in single strained‐layer structures is presented. These measurements rely on the application of recent observations regarding breaking of the usual selection rules for interband magnetoluminescence transitions in modulation‐doped structures. Low‐temperature magneto‐luminescence data for three representative InGaAs/GaAs n‐type single‐strained quantum well structures are presented. For energies approaching 50 meV above the band gap, we find that the conduction band is parabolic with an effective mass of 0.071m0. Over the same energy range, the valence bands are highly nonparabolic.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors
78.20.Ls Magneto-optical effects

Photocurrent spectroscopy of InxGa1−xAs/GaAs multiple quantum wells

P. W. Yu, G. D. Sanders, K. R. Evans, D. C. Reynolds, K. K. Bajaj, C. E. Stutz, and R. L. Jones

Appl. Phys. Lett. 54, 2230 (1989); http://dx.doi.org/10.1063/1.101132 (3 pages) | Cited 16 times

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Photocurrent spectra of InxGa1−xAs/GaAs multiple quantum well structures grown by molecular beam epitaxy are studied in the presence of electric fields perpendicular to the heterointerface. Several Δn=0 allowed and Δn≠0 forbidden excitonic transitions are observed. Both negative and positive shifts of exciton transitions are found. Good agreement is found between the photocurrent observations and calculations using a multiband effective‐mass approach, taking into account the strain‐induced splitting.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Pz Photoconduction and photovoltaic effects
73.61.Ey III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Minority‐hole diffusion length in heavily doped silicon

Chih Hsin Wang, Konstantinos Misiakos, and Arnost Neugroschel

Appl. Phys. Lett. 54, 2233 (1989); http://dx.doi.org/10.1063/1.101133 (2 pages) | Cited 7 times

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The minority‐hole diffusion length in heavily doped n‐type silicon wafers was measured in the doping range 1018–1020 cm−3. The experimental method is based on the lateral collection of photogenerated carriers by a semi‐infinite junction. Closed form expressions available for this particular two‐dimensional geometry greatly simplify the analysis of the experimental results. The results are consistent with an Auger‐limited minority‐carrier lifetime and a diffusion coefficient that is doping insensitive in the 1018–1020 cm−3 range.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
72.80.Cw Elemental semiconductors

Molecular beam epitaxy growth of InSb films on GaAs

John L. Davis and Phillip E. Thompson

Appl. Phys. Lett. 54, 2235 (1989); http://dx.doi.org/10.1063/1.101134 (3 pages) | Cited 20 times

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InSb films have been grown by molecular beam epitaxy on GaAs substrates. The procedure incorporated a low‐temperature (300 °C) growth of a thin (300 Å) InSb interface layer prior to the InSb active layer growth at 380 °C. A beam equivalent pressure ratio of Sb4 to In of 4 led to samples with the highest 77 K Hall mobilities. Hall mobilities in excess of 35 000 cm2 /V s at 77 K and x‐ray rocking curve widths less than 250 arcsec are routinely achieved in films 2–5 μm thick. The 77 K Hall electron mobilities are a factor of 4 greater than recently reported results. The x‐ray rocking curve widths are also substantially less. Possible explanations for the improved film properties are discussed.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Ey III-V semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
68.55.-a Thin film structure and morphology

Aqueous electrochemical growth of anodic sulfide films on mercury cadmium telluride

John P. Ziegler and John C. Hemminger

Appl. Phys. Lett. 54, 2238 (1989); http://dx.doi.org/10.1063/1.101135 (3 pages) | Cited 13 times

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We present here the first demonstration that oxide‐free anodic sulfide layers can be grown on HgCdTe from aqueous electrolytic solutions. Previous work has shown that anodic sulfide films grown from nonaqueous solutions have great potential as passivating layers for HgCdTe. In this work Auger electron spectroscopy depth profiles are used to show that little or no oxide is left at the HgCdTe/CdS interface even when an aqueous growth electrolyte is utilized. Capacitance‐voltage data on metal‐insulator‐semiconductor structures show that the temperature stability of the aqueous sulfide films may be superior to those grown from nonaqueous electrolytes.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
82.45.-h Electrochemistry and electrophoresis
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Metallic contamination in silicon during plasma resist stripping: A deep level transient spectroscopy study

O. Joubert, D. Mathiot, and J. Pelletier

Appl. Phys. Lett. 54, 2241 (1989); http://dx.doi.org/10.1063/1.101136 (3 pages)

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Deep level transient spectroscopy is shown to be an easy way to investigate the defects induced in the silicon substrate during photoresist plasma etching. In this study it has been possible to discriminate between the contamination induced by the reactor environment and the contamination due to the resist itself. In particular, it is demonstrated that residual chromium and iron atoms present in the resist are responsible for a contamination of the Si substrate.
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71.55.Ht Other nonmetals
81.65.-b Surface treatments
61.72.Bb Theories and models of crystal defects
85.40.Hp Lithography, masks and pattern transfer
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