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19 Jun 1989

Volume 54, Issue 25, pp. 2503-2607

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Experimental verification of frequency level‐off of modulational instability in the minimum dispersion region

Fumihiko Ito, Ken‐ichi Kitayama, and Hisao Yoshinaga

Appl. Phys. Lett. 54, 2503 (1989); http://dx.doi.org/10.1063/1.101075 (3 pages) | Cited 4 times

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It is verified experimentally that the modulation frequency of modulational instability (MI) levels off to a certain upper limit by the fourth‐order dispersion of the optical fiber as the pump wavelength approaches the zero‐dispersion wavelength in the anomalous spectral region. Modulation frequencies observed in optical fibers with various dispersion values range up to 7 THz for an input intensity of 15 W/70 μm2. This agrees well with the recently reported theoretical prediction based upon the four‐photon mixing approach to MI.
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42.81.Dp Propagation, scattering, and losses; solitons
42.65.-k Nonlinear optics

The optical gain lever: A novel gain mechanism in the direct modulation of quantum well semiconductor lasers

Kerry J. Vahala, Michael A. Newkirk, and T. R. Chen

Appl. Phys. Lett. 54, 2506 (1989); http://dx.doi.org/10.1063/1.101076 (3 pages) | Cited 22 times

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A new gain mechanism active in certain quantum well laser diode structures is demonstrated and explained theoretically. It enhances the modulation amplitude produced by either optical or electrical modulation of quantum well structures. In the devices tested, power gains of 6 dB were measured from low frequency to frequencies of several gigahertz. Higher gains may be possible in optimized structures.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Electro‐optical switching in a GaAs multiple quantum well directional coupler

M. Cada, B. P. Keyworth, J. M. Glinski, C. Rolland, A. J. SpringThorpe, K. O. Hill, and R. A. Soref

Appl. Phys. Lett. 54, 2509 (1989); http://dx.doi.org/10.1063/1.101077 (3 pages) | Cited 6 times

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Theoretical and experimental results are reported on electro‐optical switching in a GaAs‐based multiple quantum well coupled planar nonlinear optical directional coupler. It is shown that a careful selection of the wavelength of operation can lead to an efficient, practically constant loss, low electric field controlled transfer of light energy from one slab waveguide to the other. The quantum‐confined Stark effect in the multiple quantum well coupling layer is employed as the switching mechanism. Results are compared with those achieved with nonlinear all‐optical switching in the same structure. It is believed that this is the first semiconductor ΔK switch.
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42.79.-e Optical elements, devices, and systems
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.65.-k Nonlinear optics

Rapid fabrication of lightweight ceramic mirrors via chemical vapor deposition

Jitendra S. Goela and Raymond L. Taylor

Appl. Phys. Lett. 54, 2512 (1989); http://dx.doi.org/10.1063/1.101078 (3 pages) | Cited 9 times

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Lightweight Si/SiC mirrors of nominal diameter 7.5 cm have been fabricated via a scalable and rapid, chemical vapor deposition (CVD) process to demonstrate the CVD mirror fabrication technology. These mirrors consist of a faceplate of either Si or Si‐coated SiC and a lightweight backstructure made of either Si or SiC. The mirrors were polished to a figure better than 1/5th of a wave at 0.6328 Å and a finish of better than 10 Å rms. A procedure for fabricating these mirrors is described. The CVD fabrication process is fast and has the potential to yield several mirrors in a few weeks time from a single reactor. The CVD mirror fabrication technology is quite general and can be extended to include mirrors of other ceramic materials such as TiB2 and B4C.
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42.15.Eq Optical system design
42.79.Bh Lenses, prisms and mirrors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Je Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides)
42.70.-a Optical materials

GaAs/AlGaAs multiquantum well infrared detector arrays using etched gratings

G. Hasnain, B. F. Levine, C. G. Bethea, R. A. Logan, J. Walker, and R. J. Malik

Appl. Phys. Lett. 54, 2515 (1989); http://dx.doi.org/10.1063/1.101079 (3 pages) | Cited 70 times

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Efficient coupling of long‐wavelength infrared (LWIR) radiation to a two‐dimensional (2‐D) array of GaAs/AlGaAs multiple quantum well detectors is achieved by illumination through chemically etched diffraction gratings. Gratings were fabricated on the back surface of the GaAs substrate as well as selectively on the top contact of the detector mesas. Both top and bottom illumination schemes were employed. In all cases, high coupling efficiency (>90%) of the gratings was observed as measured by comparing the responsivity to that of an identical detector illuminated through an angle‐polished facet. The results demonstrate the feasibility of high‐sensitivity GaAs LWIR imagers.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
42.79.Dj Gratings

Gain‐loss model for the dependence of the stimulated‐emission transition in AlGaAs‐GaAs quantum well heterostructures on photoexcitation geometry

B. A. Vojak and N. Holonyak

Appl. Phys. Lett. 54, 2518 (1989); http://dx.doi.org/10.1063/1.101080 (3 pages) | Cited 2 times

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The gain‐loss laser oscillation condition is applied to photoexcitation geometries in which phonon‐assisted laser operation is observed in AlGaAs‐GaAs quantum well heterostructures (QWHs). The model is found to agree with a variety of experimental conditions in which cavity size, photoexcitation spot size, and mirror reflectivity are varied. Also, it serves to indicate further how others might have failed to observe phonon‐assisted laser operation in QWHs and how photoexcitation geometries can be varied to verify these results.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
78.55.Cr III-V semiconductors
85.30.-z Semiconductor devices

Anomalous dependence of threshold current on stripe width in gain‐guided strained‐layer InGaAs/GaAs quantum well lasers

C. Shieh, J. Mantz, H. Lee, D. Ackley, and R. Engelmann

Appl. Phys. Lett. 54, 2521 (1989); http://dx.doi.org/10.1063/1.101081 (3 pages) | Cited 19 times

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An anomalous dependence of the threshold current on the stripe width is observed for gain‐guided strained‐layer InGaAs/GaAs quantum well lasers. The threshold current increases strongly as the stripe width is reduced from relatively large values. This is attributed to the huge lateral loss caused by an unusually large index antiguide which manifests itself in the far‐field behavior. This large loss also leads to a population of higher quantized energy levels in the InGaAs quantum well strongly reducing the lasing wavelength by as much as 61 nm.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Third‐order nonlinear optical properties of a soluble conjugated polythiophene derivative

Samson A. Jenekhe, S. K. Lo, and Steven R. Flom

Appl. Phys. Lett. 54, 2524 (1989); http://dx.doi.org/10.1063/1.101082 (3 pages) | Cited 43 times

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The second hyperpolarizability 〈γxxxx 〉 of a new, soluble, conjugated polythiophene derivative, containing aromatic and quinoid moieties, is measured to be 1.2×10−31 esu. The measurement was made at 532 nm in a dichloromethane solution by picosecond‐resolved degenerate four wave mixing. The corresponding macroscopic third‐order susceptibility χ(3 ) is estimated to be 4.6×10−9 esu, which is larger than that of the parent poly(2,5‐thiophene) and many currently known nonlinear optical polymers.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
42.70.-a Optical materials

Strained‐layer InGaAs‐GaAs‐AlGaAs graded‐index separate confinement heterostructure single quantum well lasers grown by molecular beam epitaxy

S. D. Offsey, W. J. Schaff, P. J. Tasker, H. Ennen, and L. F. Eastman

Appl. Phys. Lett. 54, 2527 (1989); http://dx.doi.org/10.1063/1.101083 (3 pages) | Cited 17 times

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Strained‐layer Ga0.7In0.3As‐AlGaAs‐GaAs graded‐index separate confinement heterostructure single quantum well lasers have been grown by molecular beam epitaxy with growth conditions selected to optimize the growth of each material. The lasers emit at a wavelength of 1.03 μm at 300 K. These lasers have threshold currents of 12 mA for 3 μm×400 μm devices and average threshold current densities of 174 A/cm2 for 40 μm×800 μm devices. Studies of threshold current versus cavity length and width are compared with theoretical formulations. The threshold currents for lasers of various lengths and widths are significantly lower than those for previous strained‐layer lasers grown by molecular beam epitaxy and lower than those for strained‐layer lasers grown by organometallic vapor phase epitaxy.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Calibration of the electrical response of piezoelectric elements at low voltage using laser interferometry

E. Riis, H. Simonsen, T. Worm, U. Nielsen, and F. Besenbacher

Appl. Phys. Lett. 54, 2530 (1989); http://dx.doi.org/10.1063/1.101064 (2 pages) | Cited 12 times

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A laser interferometric method is described by which the length‐to‐voltage sensitivity of piezoelectric elements, as used e.g., in scanning tunneling microscopes, can be calibrated. The method is based on measuring the optical frequency of a laser locked to a piezoelectrically tuned interferometer, relative to a stable reference. The high sensitivity of this technique allows the calibration to be carried out in the low‐voltage regime.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
07.60.Ly Interferometers
43.38.Fx Piezoelectric and ferroelectric transducers
06.20.F- Units and standards

Tunable twin‐guide laser: A novel laser diode with improved tuning performance

M.‐C. Amann, S. Illek, C. Schanen, and W. Thulke

Appl. Phys. Lett. 54, 2532 (1989); http://dx.doi.org/10.1063/1.101065 (2 pages) | Cited 18 times

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A new wavelength tunable laser diode with a basically continuous tuning behavior is presented. This essential progress is achieved by transversely tuning the effective index of a distributed feedback laser using a twin waveguide. Due to the built‐in synchronization of the Bragg wavelength and the optical cavity length, the wavelength is controlled by only a single current. The device technology and preliminary experimental results demonstrating the transverse tuning mechanism are presented.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Full‐aperture, high‐power semiconductor laser

R. G. Waters, R. J. Dalby, and M. A. Emanuel

Appl. Phys. Lett. 54, 2534 (1989); http://dx.doi.org/10.1063/1.101066 (2 pages) | Cited 1 time

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A single quantum well laser with a 2‐mm‐wide aperture has exhibited low threshold current density and nearly 100% packing fraction. The lateral structure relies on epitaxial growth on a corrugated substrate to frustrate radiative lateral processes and it thus eliminates the need for isolation at least for incoherent operation. Threshold current densities are comparable to those for low‐power devices, and slope efficiencies remain undiminished to our current limit where 10.7 W per facet is attained. The aperture size is limited only by our fixturing arrangement.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Nitrogen‐implantation‐induced transformation of iron to crystalline Fe16N2 in epitaxial iron films

Kensuke Nakajima and Shoichi Okamoto

Appl. Phys. Lett. 54, 2536 (1989); http://dx.doi.org/10.1063/1.101543 (3 pages) | Cited 18 times

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Crystalline phase Fe16 N2 has been found in nitrogen‐implanted epitaxial iron films on mirror‐polished (100) MgO substrates. Implantations of N+2 at an acceleration voltage of 140 keV transformed the bcc iron into a partially ordered nitrogen martensite with a body‐centered‐tetragonal (bct) structure. The amount of the ordered part was increased to some extent by an annealing treatment in vacuum at 150 °C for 2 hr. An implantation with a dose of 4×1016 N2/cm2 transformed 60% iron in a film into the bct martensite. The constituent of the ordered phase (Fe16 N2 ) in the bct martensite was 16 wt. %. After the annealing, the constituent increased to 24%. It is proposed that a formation of lower temperature and metastable compound such as Fe16 N2 can be made available through energetic ion implantation.
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68.55.Nq Composition and phase identification
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.80.Jh Ion radiation effects

Origin and penetration depth of thermal degradation in InP

B. Sartorius and K. Pfanner

Appl. Phys. Lett. 54, 2539 (1989); http://dx.doi.org/10.1063/1.101043 (3 pages) | Cited 3 times

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Thermal degradation is examined in a development stage in which local damage in the crystal lattice already exists, although the known surface deformations are not yet visible. The existence of these crystal defects is shown by means of luminescence microscopy. Depth profiles reveal that the damage is not restricted to the surface. On ‘‘dark disks,’’ e.g., a spherical spreading of the degradation by some 10 μm into the crystal volume is observed. Correlation with the position of dislocation etch pits shows that all dislocations are ‘‘decorated’’ with thermally induced defects. ‘‘Dark disks,’’ however, represent no advanced stage of degradation after having been ‘‘decorated,’’ but develop separately from a different defect type, visible as ‘‘S’’ or ‘‘flat’’ etch pits. This type of defect has not yet been taken into consideration with regard to crystal quality criteria. We suspect that thermal degradation developing from this defect type is the missing link between substrate quality and certain problems in processing and device failure.
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61.72.Bb Theories and models of crystal defects
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)

Metalorganic chemical vapor deposition of [100] textured MgO thin films

B. S. Kwak, E. P. Boyd, K. Zhang, A. Erbil, and B. Wilkins

Appl. Phys. Lett. 54, 2542 (1989); http://dx.doi.org/10.1063/1.101044 (3 pages) | Cited 26 times

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We report on the results of a recent study on the deposition of [100] textured MgO films on fused quartz substrates by using the metalorganic chemical vapor deposition technique. Magnesium β‐diketonate was used as the metal source and the growth rate of the film was about 0.4 μm/h at 740 °C in a horizontal warm wall reactor. X‐ray diffraction experiments provided evidence that the MgO films on fused quartz were fully textured with [100] orientation perpendicular to the substrate surface. The films had a very smooth surface morphology and optical transparency with an index of refraction of 1.71.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Carbon as a barrier for the outdiffusion of Cu

Chin‐An Chang, D. S. Yee, and R. Petkie

Appl. Phys. Lett. 54, 2545 (1989); http://dx.doi.org/10.1063/1.101045 (3 pages) | Cited 8 times

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The effectiveness of carbon as a barrier for the outdiffusion of Cu is studied using C/Cu/substrate and Au/C/Cu/substrate structures. For the C/Cu structure deposited on SiO2 ‐coated Si with a 700 Å C layer, heating to 700 °C for 72 h and 750 °C for 6 h shows no outdiffusion of Cu to the carbon surface in N2 ‐H2. Only reaction between Cu and the SiO2 layer underneath is observed. Application of the carbon barrier between Cu and Au in the Au/C/Cu/substrate structure shows that the dilution of the Au layer due to the Cu outdiffusion is similar to but less than that of the Au/Ni/Cu/substrate structure using Ni as a barrier. The stability of the Au/C/Cu/substrate structure is enhanced relative to that of the Au/Ni/Cu/substrate one by more than 150 °C. Both the advantage and concerns using carbon as barriers for the interconnect and contact metallurgies are discussed.
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68.35.Fx Diffusion; interface formation
68.60.Dv Thermal stability; thermal effects
66.30.J- Diffusion of impurities

Electron transport in (Cs)Na2KSb photocathodes

B. Yang

Appl. Phys. Lett. 54, 2548 (1989); http://dx.doi.org/10.1063/1.101046 (2 pages) | Cited 1 time

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Photoelectron transport in (Cs)Na2KSb real space is investigated using the Monte Carlo simulation technique for various photon energies. The quantum yield and modulation transfer function (MTF) of the (Cs)Na2KSb photocathodes, and the energy distribution and transit time spread (TTS) of the emitted electrons have been obtained. In particular, the quantum yield of the photocathode has a good agreement with the measured results. Computed results indicate that the energy distribution spread and TTS of the emitted electrons from a typical (Cs)Na2KSb photocathode are 0.3–0.6 eV and 300–180 fsec, respectively.
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85.60.Jb Light-emitting devices
81.65.-b Surface treatments

Ionized cluster beam deposition of Hg1−xCdxTe films and their optical properties

Gikan H. Takaoka, Satoshi Murakami, Junzo Ishikawa, and Toshinori Takagi

Appl. Phys. Lett. 54, 2550 (1989); http://dx.doi.org/10.1063/1.101047 (3 pages) | Cited 1 time

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The Hg1−x Cdx Te films with a small concentration of Cd and a narrow band gap have been prepared on GaAs(100) substrates by using the ionized cluster beam (ICB) technique. For the case of ionizing clusters of either CdTe or HgTe as source materials, the band gap can be controlled between 0.2 and 0.3 eV by adjusting the acceleration voltage for cluster ions. The kinetic energy and the ionic charge of the cluster ions are found to have much influence on the composition and the optical properties of the films.
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81.15.Jj Ion and electron beam-assisted deposition; ion plating
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Homoepitaxial growth of ZnSe on dry‐etched substrates

K. Ohkawa, T. Karasawa, A. Yoshida, T. Hirao, and T. Mitsuyu

Appl. Phys. Lett. 54, 2553 (1989); http://dx.doi.org/10.1063/1.101048 (3 pages) | Cited 18 times

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High quality ZnSe layers have been grown by molecular beam epitaxy on dry‐etched ZnSe substrates. Surface damage caused by cutting and polishing of the ZnSe substrate was removed by dry etching using BCl3 gas to 10 μm depth. The dry‐etched ZnSe substrates exhibited smooth surface morphology and showed excitonic emissions stronger than that from as‐polished substrates in photoluminescence (PL) measurements at 11 K. The low‐temperature PL spectra obtained from homoepitaxial ZnSe layers grown on the substrates dry etched at the optimum condition showed a strong free‐exciton emission at 2.804 eV and a dominant donor‐bound exciton emission at 2.798 eV. Since each excitonic emission shows a single peak, the homoepitaxial layers appear to be free from strain.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Et II-VI semiconductors
81.65.-b Surface treatments
68.35.B- Structure of clean surfaces (and surface reconstruction)

Conductance characteristics of ballistic one‐dimensional channels controlled by a gate electrode

Y. Hirayama and T. Saku

Appl. Phys. Lett. 54, 2556 (1989); http://dx.doi.org/10.1063/1.101049 (3 pages) | Cited 24 times

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Ballistic one‐dimensional channels are fabricated using a highly resistive region induced by focused Ga ion beam scanning. Both wide and narrow channels are fabricated using this process. Transport characteristics of these channels are controlled by a voltage applied to the Schottky electrode on the channel. The channels show multiple‐step structures in their transport characteristics at low temperature when the gate voltage is varied. This is probably due to the ballistic transport through one‐dimensional quantized electron states. For narrower channels, the number of the observed steps becomes fewer. Instead, the structures are observable at higher temperature.
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72.80.Ey III-V and II-VI semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.30.Hi Surface barrier, boundary, and point contact devices

X‐ray photoelectron spectroscopic study of rapid thermal processing on SiO2/GaAs

Masayuki Katayama, Yutaka Tokuda, Nobuo Ando, Yajiro Inoue, Akira Usami, and Takao Wada

Appl. Phys. Lett. 54, 2559 (1989); http://dx.doi.org/10.1063/1.101544 (3 pages) | Cited 16 times

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Effects of rapid thermal processing (RTP) on 200‐nm‐thick SiO2/GaAs interfaces have been studied with x‐ray photoelectron spectroscopy. RTP has been performed at 910 °C for 9 s with the heating rate of 53 °C/s. Rapid diffusion of Ga through SiO2 occurs. The diffusion coefficient of Ga in SiO2 for RTP is found to be about two orders of magnitude larger than that for conventional furnace processing. The heating rate dependence of the Ga outdiffusion is also reported in the range 31–83 °C/s. In addition, slight loss of As is observed. These results are discussed on the basis of the RTP‐induced thermal stress between SiO2 and GaAs.
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68.35.Fx Diffusion; interface formation
81.40.Gh Other heat and thermomechanical treatments
61.72.Bb Theories and models of crystal defects
61.72.U- Doping and impurity implantation

Solid phase epitaxy of molecular beam deposited amorphous GaAs on Si

Kiyohiko Yoshino, Kouichi Murakami, Shin Yokoyama, and Kohzoh Masuda

Appl. Phys. Lett. 54, 2562 (1989); http://dx.doi.org/10.1063/1.101050 (3 pages) | Cited 6 times

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Solid phase epitaxial (SPE) crystallization of amorphous GaAs on (100) Si tilted by 4° toward 〈011〉 formed by molecular beam deposition (MBD) was first achieved by cw Kr laser irradiation for short durations. The ratio of As to Ga (y/x) in deposited amorphous GaxAsy films was varied from 0.4 to 1.2. During the laser irradiation, movement of the amorphous/crystalline interface was measured using time‐resolved optical reflectivity (TROR). It was found from TROR and micro‐Raman scattering measurements that hetero‐SPE is attained in samples with As/Ga ratios ranging from 0.8 to 1.1 and that the interface roughness is larger than that observed in homo‐SPE (e.g., MBD GaAs on GaAs and P+ ion‐implanted GaAs).
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81.15.Np Solid phase epitaxy; growth from solid phases
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
78.30.Fs III-V and II-VI semiconductors

Reflection high‐energy electron diffraction and x‐ray photoelectron spectroscopic study on (NH4)2Sx‐treated GaAs (100) surfaces

Hiroyuki Hirayama, Yoshishige Matsumoto, Haruhiro Oigawa, and Yasuo Nannichi

Appl. Phys. Lett. 54, 2565 (1989); http://dx.doi.org/10.1063/1.101051 (3 pages) | Cited 32 times

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(NH4)2Sx‐treated GaAs (100) surfaces were heated in an ultrahigh vacuum. Reflection high‐energy electron diffraction (RHEED) and Ga, As, S, and O x‐ray photoelectron spectroscopic (XPS) changes were observed. The sulfide‐treated surface showed a streaky 1×1 RHEED pattern without heating. A 2×1 RHEED pattern appeared during heating to 260 and 420 °C. At these temperatures, the S XPS peak was still observed. The 2×1 pattern is thought to be S induced. On the (NH4)2Sx‐treated surface, no oxidized As XPS signal was observed. Moreover, the O XPS peak disappeared rapidly during the heating above 260 °C. These results suggest that the 2×1 S structure caused the GaAs (100) surface passivation.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)
81.65.-b Surface treatments

Misfit stress dependence of dislocation density reduction in GaAs films on Si substrates grown by strained‐layer superlattices

Masafumi Yamaguchi, Mitsuru Sugo, and Yoshio Itoh

Appl. Phys. Lett. 54, 2568 (1989); http://dx.doi.org/10.1063/1.101052 (3 pages) | Cited 31 times

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High quality GaAs films with dislocation densities of (1–2)×106 cm−2 on (100) Si substrates have been obtained for a combination of strained‐layer superlattice (SLS) insertion such as InGaAs/GaAs, InGaAs/GaAsP, and AlGaAs/GaAs and thermal cycle annealing using the metalorganic chemical vapor deposition method. Remarkable reduction effects of dislocation density and dislocation generation in the GaAs layers due to SLS insertion on Si have been analyzed by a simple model, in which coalescence and generation of dislocations are assumed to be caused by dislocation motion under misfit stress of SLSs. Misfit stress dependence of dislocation density reduction in GaAs films on Si has been clarified using this model.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.55.-a Thin film structure and morphology
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Ion channeling analysis of a Si1−xGex(As)/Si strained layer

J. A. Moore, W. N. Lennard, G. R. Massoumi, T. E. Jackman, J‐M. Baribeau, and J. A. Jackman

Appl. Phys. Lett. 54, 2571 (1989); http://dx.doi.org/10.1063/1.101364 (3 pages)

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A strained layer of Si1−x Gex (As)/Si has been grown by molecular beam epitaxy (MBE) with the As dopant introduced by 1 keV ion implantation during growth. Analysis of the layer was made using secondary‐ion mass spectrometry (SIMS), Rutherford backscattering (RBS), and proton‐induced x‐ray emission (PIXE)/channeling, using 2 MeV H+ ions. The layer thickness (∼1.4 μm) and composition (x∼0.015; nAs ∼6×1018 cm−3) measurements by SIMS, RBS, and PIXE were in agreement. RBS, PIXE/channeling showed that the crystalline quality of the strained layer was equivalent to that of the Si substrate. The substitutional fraction (∼0.75) of the As dopant was determined by PIXE/channeling.
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61.85.+p Channeling phenomena (blocking, energy loss, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
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