APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

16 Jan 1989

Volume 54, Issue 3, pp. 193-291

Page 1 of 2 Pages Next Page | Jump to Page

Pressure‐dependent optical delay time measurements in a coaxial electron beam pumped Ar:Xe laser

P. J. M. Peters, Qi‐Chu Mei, and W. J. Witteman

Appl. Phys. Lett. 54, 193 (1989); http://dx.doi.org/10.1063/1.101005 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
Optical delay times and pulse widths of five Ar:Xe laser lines have been measured as a function of the total gas pressure. Both the delay time and the pulse width appeared to be almost linearly dependent on the inverse gas pressure. For a total gas pressure of 14 bars the delay times were around 100 ns, at a total gas pressure of 1 bar the laser output typically appeared after 1–3 μs.
Show PACS
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.55.-f Lasers

Wideband scanning of a guided‐light beam and spectrum analysis using magnetostatic waves in an yttrium iron garnet‐gadolinium gallium garnet waveguide

C. S. Tsai and D. Young

Appl. Phys. Lett. 54, 196 (1989); http://dx.doi.org/10.1063/1.101006 (3 pages) | Cited 13 times

Full Text: | Download PDF

Show Abstract
Wideband scanning of a light beam through the use of magnetostatic waves has been accomplished for the first time. Specifically, a guided‐light beam at a wavelength of 1.317 μm in an yttrium iron garnet‐gadolinium gallium garnet waveguide was Bragg diffracted by magnetostatic forward volume waves (MSFVWs) operating at a frequency range of 2–7 GHz. Wideband scanning of the light beam was accomplished simply by changing the frequency of the MSFVW continuously from center frequencies of 2.5 and 6.0 GHz while keeping the dc magnetic field fixed or by continuously tuning the dc magnetic field while keeping the frequency of the MSFVW fixed at the center frequencies. A large number of resolvable scan spot positions were obtained in both cases. The resulting wideband magneto‐optic Bragg cell or light beam scanner was also used to perform spectral analysis of wideband rf signals at a center frequency of 3.2 GHz. Potential advantages of the magneto‐optic Bragg cell and scanner over the existing acousto‐optic counterparts also identified.
Show PACS
42.79.Hp Optical processors, correlators, and modulators
78.20.Ls Magneto-optical effects
85.70.Ec Magnetostrictive, magnetoacoustic, and magnetostatic devices
85.70.Ge Ferrite and garnet devices

Light‐scattering limitations for phase conjugation in optical Kerr media

R. McGraw, D. Rogovin, and A. Gavrielides

Appl. Phys. Lett. 54, 199 (1989); http://dx.doi.org/10.1063/1.101007 (3 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
It is shown that noise from light‐scattering fluctuations inherent in an optical Kerr medium sets a lower limit on the incident probe power required to achieve meaningful phase conjugation by four‐wave mixing. For visible wavelengths and room temperatures, we determine that about 10 μW of probe power is needed to obtain a signal‐to‐noise ratio of unity in the conjugate wave for reflectivities that are less than or near the first oscillation condition.
Show PACS
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation

Optical bistability in self‐electro‐optic effect devices with asymmetric quantum wells

D. A. B. Miller

Appl. Phys. Lett. 54, 202 (1989); http://dx.doi.org/10.1063/1.101008 (3 pages) | Cited 35 times

Full Text: | Download PDF

Show Abstract
It is shown theoretically that optical bistability is possible in a self‐electro‐optic effect device (SEED) with single asymmetric quantum wells because of the blue shift of the optical absorption edge with applied field possible in such structures (in contrast to the normal red shift in symmetric wells). The concept is a simplification of the scheme of J. Khurgin [Appl. Phys. Lett. 53, 779 (1988)] (which uses unequal, opposed pairs of asymmetric wells) and shares the potential advantages of lower loss in the transmitting state and less stringent requirements on the exciton absorption peaks.
Show PACS
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors

Spatial mode structure of broad‐area semiconductor quantum well lasers

C. J. Chang‐Hasnain, E. Kapon, and R. Bhat

Appl. Phys. Lett. 54, 205 (1989); http://dx.doi.org/10.1063/1.101009 (3 pages) | Cited 12 times

Full Text: | Download PDF

Show Abstract
The spatial mode characteristics of gain‐guided broad‐area quantum well lasers grown by organometallic chemical vapor deposition were investigated experimentally. GaAs/AlGaAs quantum well lasers grown on 6°‐off (100) oriented substrates exhibit excellent material uniformity, which allows study of their modal behavior. Gain‐guided broad‐area lasers fabricated on such uniform material demonstrate nearly ideal gain‐guiding modal behavior. These lasers tend to lase in the fundamental mode near threshold and emit single‐lobed far‐field patterns. In these well‐behaved broad‐area lasers, we have identified the mechanism for degradation in the spatial coherence at high pumping levels as the onset of higher order lateral modes.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems

14 GHz single‐mode picosecond optical pulse train generation in Zn‐doped distributed‐feedback lasers

K. Kamite, H. Sudo, M. Sugano, H. Soda, T. Kusunoki, and H. Ishikawa

Appl. Phys. Lett. 54, 208 (1989); http://dx.doi.org/10.1063/1.101010 (2 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
To generate ultrashort pulse train at a high repetition rate, Zn was doped to the active region of distributed‐feedback lasers. Increase in the differential gain and reduction of the carrier lifetime have been confirmed. The 3 dB bandwidth was increased to 16 GHz. The 14 ps single longitudinal mode optical pulse train at a repetition rate of 14 GHz was generated by gain‐switched operation.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

H− production in a small multicusp ion source with addition of barium

S. R. Walther, K. N. Leung, and W. B. Kunkel

Appl. Phys. Lett. 54, 210 (1989); http://dx.doi.org/10.1063/1.101011 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
The effect on H− production by adding barium to a hydrogen discharge, in a small magnetically filtered multicusp ion source, has been investigated. It is found that the addition of barium can increase the H− output by a factor of 30. A strong dependence of H− output on the temperature of the ion source wall has also been observed.
Show PACS
07.77.-n Atomic, molecular, and charged-particle sources and detectors
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
52.50.Dg Plasma sources
52.75.Di Ion and plasma propulsion

Study of novel chemical surface passivation techniques on GaAs pn junction solar cells

M. G. Mauk, S. Xu, D. J. Arent, R. P. Mertens, and G. Borghs

Appl. Phys. Lett. 54, 213 (1989); http://dx.doi.org/10.1063/1.101012 (3 pages) | Cited 24 times

Full Text: | Download PDF

Show Abstract
Novel methods of GaAs surface passivation are investigated. Passivation is acheived by simple chemical treatments using aqueous solutions of Na2S, KOH, RuCl3, and K2Se. GaAs pn homojunction solar cells are used to evaluate the effectiveness of these passivation techniques. A significant reduction in minority‐carrier surface recombination velocity is demonstrated. In the best case, the surface recombination velocity decreased from 5×106 cm/s (untreated surface) to 103 cm/s. In addition, we observe improvements in solar cell photogenerated current, short wavelength spectral response, open‐circuit voltage, and junction ‘‘dark’’ current.
Show PACS
84.60.Jt Photoelectric conversion
81.65.-b Surface treatments
81.40.Rs Electrical and magnetic properties related to treatment conditions
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Laser plasma source of amorphic diamond

C. B. Collins, F. Davanloo, E. M. Juengerman, W. R. Osborn, and D. R. Jander

Appl. Phys. Lett. 54, 216 (1989); http://dx.doi.org/10.1063/1.101013 (3 pages) | Cited 66 times

Full Text: | Download PDF

Show Abstract
Amorphic diamond films characterized by a high percentage of sp3 bonds have been prepared in an UHV environment with a laser plasma source of carbon ions. Peak power densities in excess of 1011 W/cm2 were found necessary to produce films at growth rates of 0.5 μm/h over areas of 20 cm2 having optical quality sufficient to show bright interference colors.
Show PACS
81.15.Jj Ion and electron beam-assisted deposition; ion plating
78.66.-w Optical properties of specific thin films
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
73.61.Ng Insulators

Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering

S. S. Iyer, J. C. Tsang, M. W. Copel, P. R. Pukite, and R. M. Tromp

Appl. Phys. Lett. 54, 219 (1989); http://dx.doi.org/10.1063/1.101014 (3 pages) | Cited 84 times

Full Text: | Download PDF

Show Abstract
The influence of growth temperature on the interfacial abruptness of strained Ge layers, a few monolayers thick, embedded in Si has been studied using Raman spectroscopy to identify the presence of GeGe and GeSi bonds and medium energy ion scattering to characterize the spatial extent of the layers. Atomically sharp interfaces are observed for growth temperatures just above the crystalline to amorphous transition range, with pseudomorphic growth found for growth temperatures >∼250 °C. Asymmetric mixing of Ge into the Si capping layer occurs during growth at higher temperatures. Significantly less intermixing occurs on annealing after growth, pointing to the role of dynamical processes occurring at the growth front.
Show PACS
68.35.B- Structure of clean surfaces (and surface reconstruction)
78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.55.-a Thin film structure and morphology

Tetragonal and monoclinic forms of GexSi1−x epitaxial layers

D. J. Eaglesham, D. M. Maher, H. L. Fraser, C. J. Humphreys, and J. C. Bean

Appl. Phys. Lett. 54, 222 (1989); http://dx.doi.org/10.1063/1.101015 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
The effect of strains on the local crystallographic symmetry and structure of a Si/GexSi1−x model heterostructure grown on a (100) silicon substate was studied using convergent beam electron diffraction techniques and a cross‐sectional specimen geometry. The alloy layers are seen to distort into relaxed tetragonal and monoclinic structures which are dependent on position and/or alloy composition. These observations can be explained in terms of strain relaxation in a thin‐film specimen and deviations of the substrate from a perfect (100) orientation. The results have implications not only for the use of cross‐sectioned specimens in the characterization of strained‐layer heterostructures, but also for the band engineering of Si/GexSi1−x strained‐layer superlattices and other materials which are grown on vicinal (100) and other low‐symmetry substrate orientations. In particular relaxed tetragonal and monoclinic structures may be quite relevant to the emerging science of strain‐induced lateral confinement of carriers in quantum well semiconductors.
Show PACS
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.-a Thin film structure and morphology
68.35.Gy Mechanical properties; surface strains

Anisotropic laser etching of oxidized (100) silicon

C. Arnone and G. B. Scelsi

Appl. Phys. Lett. 54, 225 (1989); http://dx.doi.org/10.1063/1.101443 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
Laser‐induced anisotropic chemical etching of silicon is reported, by using a 488 nm Ar+ laser in direct write mode and high‐pressure Cl2 process gas. Surface modifications directly comparable with conventional anisotropic wet etching methods have been obtained. A main role in the process is played by the masking effect due to a thin uniform SiO2 film grown on the Si substrate. An explanation of the etching mechanism is attempted.
Show PACS
81.65.-b Surface treatments
81.05.Kf Glasses (including metallic glasses)
79.20.Ds Laser-beam impact phenomena
85.40.Hp Lithography, masks and pattern transfer

Reaction of titanium with germanium and silicon‐germanium alloys

O. Thomas, S. Delage, F. M. d’Heurle, and G. Scilla

Appl. Phys. Lett. 54, 228 (1989); http://dx.doi.org/10.1063/1.101444 (3 pages) | Cited 37 times

Full Text: | Download PDF

Show Abstract
The reaction of Ti with pure Ge and several Ge‐Si alloys has been investigated with the double aim of understanding the reaction with Ge and of throwing some light on the still vexing problem of the Ti‐Si reaction. With pure Ge one observes first of all the formation of Ti6Ge5 until complete consumption of the Ti is present. This is followed by the clearly identifiable nucleation of TiGe2, initially forming islands that grow laterally. With a 50‐50 (at. %) alloy of Si and Ge, one still observes distinct growth steps, but there is overlap between the growth of the initial phase, and the nucleation and growth of Ti(Ge,Si)2.
Show PACS
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.-a Thin film structure and morphology

Reactive evaporation of titanium oxide films with controlled Ti/O ratio

H. Nozoye, N. Nishimiya, and H. Sato

Appl. Phys. Lett. 54, 231 (1989); http://dx.doi.org/10.1063/1.101445 (2 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
Oxidation state selected titanium oxide thin films (TinO2n−1; n=1–∞) were deposited by a combination of a pulsed molecular beam source and an electron beam metal source. The oxidation state of titanium was controlled solely by the number of gas pulses and the temperature of a substrate. The conditions for depositing crystalline TinO2n−1 thin films were determined.
Show PACS
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
81.05.Bx Metals, semimetals, and alloys

Growth and characterization of (111) oriented GaInAs/GaAs strained‐layer superlattices

J. G. Beery, B. K. Laurich, C. J. Maggiore, D. L. Smith, K. Elcess, C. G. Fonstad, and C. Mailhiot

Appl. Phys. Lett. 54, 233 (1989); http://dx.doi.org/10.1063/1.101016 (3 pages) | Cited 21 times

Full Text: | Download PDF

Show Abstract
We describe the growth, ion beam, and photoluminescence characterization of Ga1−xInxAs/GaAs strained‐layer superlattices grown along the [111] axis. The layer thicknesses and composition are determined by Rutherford backscattering. Normal incidence channeling gives a minimum channeling yield of 5.7%. Strain conditions are found by off‐normal incidence channeling using the angular scan method. Comparison of the photoluminescence spectrum of the superlattice with theoretical calculations provides strong evidence for the existence of strain‐generated electric fields in [111] growth axis strained‐layer superlattices.
Show PACS
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Improvements in the organometallic heteroepitaxy of indium phosphide directly on silicon

D. S. Wuu, R. H. Horng, K. C. Huang, and M. K. Lee

Appl. Phys. Lett. 54, 236 (1989); http://dx.doi.org/10.1063/1.101017 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
Specular single‐crystal InP epilayers have been grown directly on Si(100) substrates by low‐pressure organometallic vapor phase epitaxy. The effects of the initial nucleation process on the structure properties of the films were investigated, and improvements in the growth technique leading to higher quality InP films are reported. The InP/Si epilayer grown under optimum conditions exhibits high optical quality compared with that of the InP homoepilayer. Post‐growth thermal annealing at 780 °C was also confirmed to be effective in improving the overall quality of InP‐on‐Si. The results presented are superior to those reported previously for InP/Si heteroepitaxy.
Show PACS
81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.-a Thin film structure and morphology

High quality ZnTe‐ZnSe strained‐layer superlattice with buffer layer prepared by hot wall epitaxy

Y. H. Wu, H. Yang, A. Ishida, H. Fujiyasu, S. Nakashima, and K. Tahara

Appl. Phys. Lett. 54, 239 (1989); http://dx.doi.org/10.1063/1.101000 (3 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
High quality ZnTe‐ZnSe strained‐layer superlattices grown on GaAs (001) substrates have been obtained by the hot wall epitaxy technique through introducing ZnTe and ZnSe buffers. Raman scattering from folded longitudinal acoustic phonons was observed. High‐angle satellite reflection peaks due to Cu Kα1 and Kα2 radiations were clearly resolved in the x‐ray diffraction patterns, and these patterns can be almost interpreted by a simple step model. The effect of the buffer layer on the strain of the superlattice is evaluated from the results of Raman scattering and x‐ray diffraction measurements.
Show PACS
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.60.Bs Mechanical and acoustical properties
68.55.-a Thin film structure and morphology
78.30.Fs III-V and II-VI semiconductors

Low‐temperature growth of 3C‐SiC by the gas source molecular beam epitaxial method

Shin‐ichi Motoyama and Shigeo Kaneda

Appl. Phys. Lett. 54, 242 (1989); http://dx.doi.org/10.1063/1.101001 (2 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
Single crystalline 3C‐SiC films were grown on a Si substrate by molecular beam epitaxy (MBE) using SiHCl3 and C2H4 gases. The optimal growth conditions were achieved at a growth temperature (Tsub ) of 1000 °C and a gas pressure ratio (PSiHCl3 /PC2H4 ) of 1/3 at PSiHCl3 =1×10−5 Torr. Prior to the essential growth of SiC, a carbonization process was performed with C2H4 gas only. A continuous observation by reflection high‐energy electron diffraction (RHEED) was performed throughout the process of crystal growth. A series of RHEED patterns revealed that carbonization film could be grown at 750 °C and the lattice mismatch between Si and SiC crystals was satisfactorily relaxed. All processes of crystal growth were performed at a relatively low temperature.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
68.35.Fx Diffusion; interface formation

Microstructure of heteroepitaxial Si/CoSi2/Si formed by Co implantation into (100) and (111) Si

C. W. T. Bulle‐Lieuwma, A. H. van Ommen, and L. J. van IJzendoorn

Appl. Phys. Lett. 54, 244 (1989); http://dx.doi.org/10.1063/1.101446 (3 pages) | Cited 51 times

Full Text: | Download PDF

Show Abstract
Heteroepitaxial Si/CoSi2/Si structures have been synthesized by high‐dose implantation of Co into (100) and (111) Si at an energy of 170 keV and subsequent annealing. In the as‐implanted state the implanted Co is found to be present as CoSi2. For a dose of 2×1017 Co/cm2, the Co is present in the form of epitaxial precipitates, which exhibit both the aligned (A‐type) CoSi2 and twinned (B‐type) orientation. For a higher dose of 3×1017 Co/cm2, a monocrystalline epitaxial CoSi2 layer near the top of the implanted Co distribution is formed during the implantation. The heteroepitaxial structures that are formed in this way are fully aligned. In contrast, when these structures are formed by sequential surface deposition techniques, twinning occurs at every Si/CoSi2 interface. The formation of the aligned orientation of the buried CoSi2 layer can be attributed to the larger stability of aligned precipitates as compared to twin‐oriented precipitates.
Show PACS
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
61.72.Mm Grain and twin boundaries

Bound‐free intraband absorption in GaAs‐AlxGa1−xAs semiconductor quantum wells

Z. Ikonić, V. Milanović, and D. Tjapkin

Appl. Phys. Lett. 54, 247 (1989); http://dx.doi.org/10.1063/1.100979 (3 pages) | Cited 23 times

Full Text: | Download PDF

Show Abstract
The spectral characteristics of intraband absorption on bound‐free transitions in semiconductor quantum wells are analyzed. Numerical results indicate that both comparatively narrowband (∼30 meV) and broadband (≳200 meV) absorption may occur, which may be important in infrared detector design.
Show PACS
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.60.Gz Photodetectors (including infrared and CCD detectors)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Thermal equilibrium changes in diode structures of doped amorphous silicon

Jin Jang, Young Kuen Lee, Sung Chul Kim, and Choochon Lee

Appl. Phys. Lett. 54, 250 (1989); http://dx.doi.org/10.1063/1.100980 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
Thermal equilibration processes in diode structures of doped hydrogenated amorphous silicon have been studied. Fast cooling from above the thermal equilibrium temperature (TE) results in an increase in dark reverse current as well as in forward current. The reverse leakage current and the diode quality factor increase with quenching temperature at above TE. Therefore, it is concluded that the densities of metastable dangling bonds and active dopants increase upon fast cooling from above TE. We propose a new model to explain the experimental results.
Show PACS
85.30.Kk Junction diodes
72.80.Ng Disordered solids

Electrical characterization of epitaxial silicon films formed by a low kinetic energy particle process

Tadahiro Ohmi, Hiroshi Iwabuchi, Tadashi Shibata, and Takeshi Ichikawa

Appl. Phys. Lett. 54, 253 (1989); http://dx.doi.org/10.1063/1.100981 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
Electrical properties of epitaxial silicon layers formed at very low temperatures of 320–350 °C by a low kinetic energy particle process are presented. Dopant impurities in the target material are substitutionally incorporated into the epitaxially grown layer, thus being electrically activated without any additional heat cycles. An epitaxial silicon layer having a resistivity as low as 0.0018 Ω cm has been obtained using a heavily arsenic‐doped silicon target. A p‐n junction diode formed by directly depositing an n‐type epilayer on a p‐type substrate exhibits a reverse current level as low as 1.88×10−9 A/cm2 at a reverse‐bias voltage of 5 V. The electrical properties of the grown film have shown a good correlation to the crystallinity of the film, which changes depending upon the ion bombardment energy.
Show PACS
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Transient absorption spectra of a modulation‐doped Ga0.47In0.53As/Al0.48In0.52As multiple quantum well structure measured by picosecond infrared pulses

T. Elsaesser, R. J. Bäuerle, W. Kaiser, H. Lobentanzer, W. Stolz, and K. Ploog

Appl. Phys. Lett. 54, 256 (1989); http://dx.doi.org/10.1063/1.100982 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
Intersubband and intrasubband scattering of hot electron‐hole pairs is studied with picosecond infrared pulses. The carrier distribution function is derived directly from the transient absorption spectra after selective excitation of carriers to the n=1 and 2 subbands. Band filling of the n=1 conduction band results in a strong bleaching of the corresponding interband absorption and in large changes of the refractive index. An absorption change due to the population of the n=2 subbands is not detected, indicating their fast relaxation within less than 3 ps. The hot plasma cools by LO phonon emission on a time scale of several tens of picoseconds.
Show PACS
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Band offsets for pseudomorphic InP/GaAs

D. D. Nolte

Appl. Phys. Lett. 54, 259 (1989); http://dx.doi.org/10.1063/1.100983 (3 pages) | Cited 14 times

Full Text: | Download PDF

Show Abstract
Recently determined band‐edge hydrostatic deformation potentials are used to predict heterojunction band offsets for the pseudomorphic GaAs‐InP system. The calculations include GaAs/InP, InP/GaAs, and strained‐layer GaAs‐InP superlattices for both [100] and [111] oriented epitaxial growth. The offsets are type II for the unstrained case. The large hydrostatic contributions to the stress‐induced band offsets can convert the offsets to type I. This conversion is especially apparent for growth in the [111] direction because of the small Poisson ratio for biaxial stress in the (111) plane.
Show PACS
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Depth‐dependent native‐defect‐induced layer disordering in AlxGa1−xAs‐GaAs quantum well heterostructures

L. J. Guido, N. Holonyak, K. C. Hsieh, and J. E. Baker

Appl. Phys. Lett. 54, 262 (1989); http://dx.doi.org/10.1063/1.100984 (3 pages) | Cited 33 times

Full Text: | Download PDF

Show Abstract
Photoluminescence measurements on annealed single‐well Alx Ga1−x As‐GaAs quantum well heterostructures demonstrate that layer disordering caused by native defects is strongly depth dependent. The depth‐dependent layer disordering, as well as the corresponding depth‐dependent net carrier concentration, is a consequence of the re‐equilibration of the V−Ga vacancy and the As+Ga antisite native defect concentrations via the crystal surface.
Show PACS
68.35.Dv Composition, segregation; defects and impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close