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16 Jan 1989

Volume 54, Issue 3, pp. 193-291

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Interface properties of HgCdTe metal‐insulator‐semiconductor capacitors

M. J. Yang, C. H. Yang, M. A. Kinch, and J. D. Beck

Appl. Phys. Lett. 54, 265 (1989); http://dx.doi.org/10.1063/1.100985 (3 pages) | Cited 20 times

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The conductance method has been used to measure the density of interface states of the ZnS/Hg0.775Cd0.225Te metal‐insulator‐semiconductor (MIS) system with three different HgCdTe surface treatments. It is found that the density of fast interface states increases from ∼1011 eV−1 cm−2 at the conduction‐band minimum to ∼1013 eV−1 cm−2 near the valence‐band maximum. In addition, the interface states located in the lower part of the band gap communicate with the valence band so efficiently that the effective band gap is reduced. Our observations explain why the p‐type MIS photodiode is superior to the n‐type version in terms of breakdown voltage and storage time.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
84.32.Tt Capacitors
81.40.Rs Electrical and magnetic properties related to treatment conditions

Control of the Schottky barrier using an ultrathin interface metal layer

X. Wu, M. T. Schmidt, and E. S. Yang

Appl. Phys. Lett. 54, 268 (1989); http://dx.doi.org/10.1063/1.100986 (3 pages) | Cited 10 times

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Fermi level movements at Pt/GaAs and Ti/GaAs interfaces have been investigated using a direct measurement of Schottky barrier heights in a bimetal Schottky structure. Using thin interfacial layers, the Schottky barrier was smoothly varied from the characteristic value of the thick metal to that of the interfacial metal. The variation of barrier height versus the inner metal thickness was found to exhibit an exponential behavior extending over a few monolayers coverage. This experiment indicates a new approach to the fundamental study of metal‐semiconductor interfaces and could be useful in device applications.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Variation of lattice parameter with silicon concentration in n‐doped, liquid‐encapsulated Czochralski GaAs single crystals

G. Patrick Watson, Dieter Ast, and A. Grant Elliot

Appl. Phys. Lett. 54, 271 (1989); http://dx.doi.org/10.1063/1.100987 (3 pages) | Cited 4 times

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The lattice parameters of several Si‐doped and undoped GaAs wafers have been measured, using the Bond x‐ray diffraction technique. The relative lattice parameters of wafers from the same boule were found to decrease monotonically from seed to tail by as much as 6×10−5(δa/a), following the same trend as the increase in Si content ranging from 1.3 to 9.4×1018 cm−3 (measured by secondary‐ion mass spectroscopy). A plot of the change in lattice parameter versus the Si concentration shows a linear trend with a slope which is three times larger than that predicted by Vegard’s law. Possible explanations for this discrepancy are discussed.
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61.66.Fn Inorganic compounds
61.72.Yx Interaction between different crystal defects; gettering effect
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Determination of electron energy distribution in a GaAs vertical field‐effect transistor with hot‐electron injection

K. Yamasaki, T. Daniels‐Race, S. S. Lu, W. J. Schaff, P. J. Tasker, and L. F. Eastman

Appl. Phys. Lett. 54, 274 (1989); http://dx.doi.org/10.1063/1.100988 (3 pages) | Cited 1 time

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Electron energy distribution on the drain edge of a channel in a GaAs nongated vertical field‐effect transistor with hot‐electron injection has been probed using hot‐electron spectroscopy as a function of current density up to about 105 A/cm2. Electrons rapidly accelerated in an n+‐i‐p+‐i‐n+ planar‐doped barrier source exhibit nonequilibrium transport through a thin channel (130 nm) with deceleration due to scattering and acceleration due to the electric field. The resulting hot‐electron energy distribution, determined by using a planar‐doped barrier as an analyzer, diverges from the steady‐state one. This divergence dramatically increases with increasing the current density.
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85.30.Tv Field effect devices

InGaAs/InAsP lasers with output wavelengths of 1.58–2.45 μm

Ramon U. Martinelli, Thomas J. Zamerowski, and Paul A. Longeway

Appl. Phys. Lett. 54, 277 (1989); http://dx.doi.org/10.1063/1.100989 (3 pages) | Cited 13 times

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We have studied InxGa1−xAs/InAsyP1−y double‐heterojunction oxide stripe lasers for 0.53≤x≤0.87 and y=2.13x−1.13. The output wavelengths at 80 K ranged from 1.58 μm for x=0.53 to 2.45 μm for x=0.87. The maximum temperature for pulsed operation extended from 210 K for the 2.45 μm lasers (x=0.87) to 315 K for the 1.58 μm lasers (x=0.53). The exponential increase of the pulsed threshold current with increasing temperature is greatest for the lasers with the longest wavelengths.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Generation of high‐energy atomic beams in laser‐superconducting target interactions

J. P. Zheng, Z. Q. Huang, D. T. Shaw, and H. S. Kwok

Appl. Phys. Lett. 54, 280 (1989); http://dx.doi.org/10.1063/1.101553 (3 pages) | Cited 99 times

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High‐energy atomic beams with Mach numbers as high as 5 were observed in excimer laser‐superconducting target interactions. The velocity distributions of the Y, Ba, Cu, and O atoms and ions could be described very well by a supersonic expansion‐type mechanism similar to a molecule beam. The physics of the atomic beam formation process is discussed.
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79.20.Ds Laser-beam impact phenomena
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
74.78.-w Superconducting films and low-dimensional structures
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Feasibility of the high Tc superconducting bolometer

P. L. Richards, J. Clarke, R. Leoni, Ph. Lerch, S. Verghese, M. R. Beasley, T. H. Geballe, R. H. Hammond, P. Rosenthal, and S. R. Spielman

Appl. Phys. Lett. 54, 283 (1989); http://dx.doi.org/10.1063/1.101447 (3 pages) | Cited 73 times

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A design analysis is given for a bolometric infrared detector that uses the resistive transition of a high‐temperature superconductor as the temperature sensing element, and liquid nitrogen (LN) as the coolant. It is shown that for highly oriented c‐axis films, the measured low‐frequency noise causes little or no degradation of the performance. With the incoming radiation chopped at 10 Hz, noise equivalent powers (NEP) in the range (1–20)×10−12 W Hz−1/2 should be achievable. These values compare favorably with the NEP of other detectors operating at or above LN temperatures for wavelengths greater than 20 μm.
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07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
74.70.-b Superconducting materials other than cuprates
74.78.-w Superconducting films and low-dimensional structures

X‐ray imaging of nanostructure patterns

Y. Vladimirsky, D. Kern, W. Meyer‐Ilse, and D. Attwood

Appl. Phys. Lett. 54, 286 (1989); http://dx.doi.org/10.1063/1.100990 (3 pages) | Cited 4 times

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A Fresnel zone plate lens, with a nominal outer zone width of 400 Å, has been used to image nanostructures with soft x‐ray synchrotron radiation at 45 Å wavelength with the Göttingen x‐ray microscope at BESSY in Berlin. The structures, consisting of gold lines in thin silicon nitride membranes, were selected for tests of spatial resolution and image forming capabilities. Several patterns associated with deep submicron electronic circuits were also imaged, showing clearly resolved features smaller than 0.1 μm. Images of periodic structures, including 600 Å lines on 2000 Å centers, suggest a spatial resolution approaching the theoretical limit of approximately 500 Å.
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85.40.Hp Lithography, masks and pattern transfer
81.65.-b Surface treatments
68.35.B- Structure of clean surfaces (and surface reconstruction)

Rapid, differential microthermometry using Zeeman interferometry

Roger G. Johnston

Appl. Phys. Lett. 54, 289 (1989); http://dx.doi.org/10.1063/1.100991 (3 pages) | Cited 3 times

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Zeeman interferometry, based on the two‐frequency Zeeman effect laser, can be used for simple, noncontact differential thermometry. The thermometry is differential in both space and time. Small (0.73 μl ) laser‐heated volumes were monitored with a Zeeman interferometer. Heating rates varied over six orders of magnitude from 180 μK/s to 330 K/s. Temporal resolution was 10 μs. Measured temperatures and measured rates of heating were compared with theory for slowly and rapidly heated samples, respectively.
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07.20.Dt Thermometers
07.60.Ly Interferometers
78.20.N- Thermo-optic effects
78.20.nb Photothermal effects
44.90.+c Other topics in heat transfer (restricted to new topics in section 44)
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