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23 Jan 1989

Volume 54, Issue 4, pp. 295-400

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Efficient Er3+‐doped optical fiber amplifier pumped by a 1.48 μm InGaAsP laser diode

Masataka Nakazawa, Yasuo Kimura, and Kazunori Suzuki

Appl. Phys. Lett. 54, 295 (1989); http://dx.doi.org/10.1063/1.101448 (3 pages) | Cited 59 times

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Optical gain characteristics of an Er3+ ‐doped silica fiber have been studied by end pumping with a 1.48 μm InGaAsP high‐power laser diode. A gain as high as 12.5 dB was obtained for an absorbed pump power of 16 mW with a 3‐m‐long fiber. By constructing an Er3+ fiber ring cavity with a 3 dB single‐mode fiber coupler, we have obtained continuous wave laser oscillation at a wavelength of 1.553 μm.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.-f Lasers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.81.Wg Other fiber-optical devices

High‐power 1.3 μm superluminescent diode

Norman S. K. Kwong, Nadav Bar‐Chaim, and Tirong Chen

Appl. Phys. Lett. 54, 298 (1989); http://dx.doi.org/10.1063/1.100992 (3 pages) | Cited 12 times

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Superluminescent diodes with high output power (10 mW at 175 mA), wide spectral width (28 nm), low spectral modulation depth (<15%), wide frequency modulation bandwidth (570 MHz), and high single‐mode fiber coupling efficiency (40%) are reported. The structure is based on a buried crescent laser structure with an antireflection coating and a ‘‘short‐circuit’’ absorber to suppress lasing.
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42.60.By Design of specific laser systems
42.55.Px Semiconductor lasers; laser diodes
42.81.Pa Sensors, gyros
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Optically controlled absorption modulator based on state filling of InxGa1−xAs/GaAs quantum wells

J. M. Iannelli, J. Maserjian, B. R. Hancock, P. O. Andersson, and F. J. Grunthaner

Appl. Phys. Lett. 54, 301 (1989); http://dx.doi.org/10.1063/1.100993 (3 pages) | Cited 23 times

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We report the first demonstration of an optically controlled absorption modulator based on state filling in a periodically doped InxGa1−xAs/GaAs multiple quantum well structure. Differential absorption of approximately 104 cm−1 is observed in the quantum wells of our test structure at saturation pump powers. Photoluminescence and time‐resolved modulation measurements confirm the predicted behavior of carrier recombination and give a measure of enhanced carrier lifetime of approximately 1 ms. These initial results show the potential for developing these structures into optically addressed spatial light modulators.
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42.79.Hp Optical processors, correlators, and modulators
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Patterned quantum well semiconductor laser arrays

E. Kapon, J. P. Harbison, C. P. Yun, and L. T. Florez

Appl. Phys. Lett. 54, 304 (1989); http://dx.doi.org/10.1063/1.100994 (3 pages) | Cited 10 times

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Low‐threshold arrays of GaAs/AlGaAs patterned quantum well semiconductor lasers were grown by molecular beam epitaxy on periodically corrugated substrates. Uncoated arrays of ∼14 lasers operated with threshold curents of 3.6 mA per laser and emitted up to 375 mW from a single facet under pulsed conditions. The array lasers were not phase locked because of the tight optical confinement in each array channel. A red shift of 300 Å (55 meV) was observed in the emission wavelength of the patterned array compared to that of nonpatterned lasers made on the same substrate. The red shift results from migration effects in the growth on the nonplanar surface, which leads to thicker quantum well active regions at the array channels. This effect illustrates the usefulness of the growth of quantum well heterostructures on nonplanar substrates for lateral band‐gap engineering.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.82.-m Integrated optics

Coherent broadband microwave spectroscopy using picosecond optoelectronic antennas

Y. Pastol, G. Arjavalingam, J.‐M. Halbout, and G. V. Kopcsay

Appl. Phys. Lett. 54, 307 (1989); http://dx.doi.org/10.1063/1.101554 (3 pages) | Cited 15 times

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We describe coherent microwave transient spectroscopy experiments using picosecond optoelectronic integrated antennas. The effectiveness of the experimental setup for the measurement of the loss and dispersion properties of materials in the 10–125 GHz range is characterized using microwave filters of predictable behavior. We also present measurements of the absorption coefficient and refractive index of fused silica over this frequency band.
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41.20.Jb Electromagnetic wave propagation; radiowave propagation
78.20.-e Optical properties of bulk materials and thin films
77.22.Gm Dielectric loss and relaxation
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Infrared absorption of Ir and IrSi thin films on Si substrates

C. K. Chen, B‐Y. Tsaur, and M. C. Finn

Appl. Phys. Lett. 54, 310 (1989); http://dx.doi.org/10.1063/1.100995 (3 pages) | Cited 6 times

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The infrared absorption of Ir and IrSi thin films on Si substrates has been determined by transmission and reflection measurements over the wavelength range 2.5–25 μm. Detailed analysis of the dependence of absorption at 4 μm on film thickness indicates that a thin boundary layer with lower absorption than Ir is present at the Ir/Si interface and that such a layer with lower absorption than IrSi is present at the IrSi/Si interface. The existence of the boundary layers has been confirmed by the detection of oxygen at the interfaces by Auger analysis. Absorption and Auger measurements give no evidence of boundary layer formation at Pt/Si or PtSi/Si interfaces.
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78.66.Bz Metals and metallic alloys
68.35.Fx Diffusion; interface formation
68.55.-a Thin film structure and morphology

Temperature‐tunable second‐harmonic generation in zinc germanium diphosphide

G. C. Bhar, S. Das, U. Chatterjee, and K. L. Vodopyanov

Appl. Phys. Lett. 54, 313 (1989); http://dx.doi.org/10.1063/1.101449 (2 pages) | Cited 11 times

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Second‐harmonic generation of tunable CO2 laser radiation is reported and analyzed in ZnGeP2 both by angular and temperature tunings. Temperature tuning can thus be advantageously employed in this crystal for nonlinear devices.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Fc Modulation, tuning, and mode locking
42.55.Lt Gas lasers including excimer and metal-vapor lasers
78.20.-e Optical properties of bulk materials and thin films

Integration of a diode laser and an electronic lens for controlling the beam focus position

S. Mukai, M. Watanabe, H. Itoh, and H. Yajima

Appl. Phys. Lett. 54, 315 (1989); http://dx.doi.org/10.1063/1.100996 (2 pages)

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An electronic lens is developed for controlling the focus position of an optical beam without mechanical movement. The lens utilizes the dependence of the lateral index profile on carrier concentration profile in the waveguide layer. The lens is integrated with a diode laser by the cleave‐couple technique, and the control of the focus position of the output beam of this device is demonstrated.
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42.55.Mv Dye lasers
42.55.Px Semiconductor lasers; laser diodes
42.15.Eq Optical system design
42.79.Bh Lenses, prisms and mirrors
42.82.-m Integrated optics

Theory of the rf sheath in the regime between the ion and electron plasma frequencies

S. Biehler

Appl. Phys. Lett. 54, 317 (1989); http://dx.doi.org/10.1063/1.100997 (3 pages) | Cited 22 times

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The collisionless space‐charge sheath of a capacitivelyc oupled rf discharge is investigated in the frequency regime ωpi ≪ω≪ωpe . Assuming Boltzmann distributed electrons and starting from an existing charge exchange model of the presheath a self‐consistent analysis is presented.
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52.40.Hf Plasma-material interactions; boundary layer effects
52.80.Pi High-frequency and RF discharges

Interaction of MeV ions with pre‐existing damage in Si: A new ion beam annealing mechanism

O. W. Holland

Appl. Phys. Lett. 54, 320 (1989); http://dx.doi.org/10.1063/1.100998 (3 pages) | Cited 16 times

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A new ion beam annealing phenomenon which occurs during room‐temperature irradiation of Si is discussed. The interaction of high‐energy ions with different damage morphologies is shown to depend on the detailed nature of the damage. This interaction leads to annealing when the damage consists only of simple types of defects, while irradiation of more complex damage morphologies can result in additional damage growth. A model is proposed which qualitatively accounts for the phenomenon.
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61.80.Jh Ion radiation effects
61.72.Bb Theories and models of crystal defects
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
61.72.Yx Interaction between different crystal defects; gettering effect

X‐ray diffraction of strain relaxation in Si‐Si1−xGex heterostructures

J.‐M. Baribeau, Song Kechang, and K. Munro

Appl. Phys. Lett. 54, 323 (1989); http://dx.doi.org/10.1063/1.100999 (3 pages) | Cited 16 times

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We report a double‐crystal x‐ray diffraction study of the relaxation of molecular beam epitaxy grown Si‐Si1−xGex strained single layers and superlattices on (100) Si. The thermal stability of the heterostructures was investigated by annealing between 600 and 900 °C. Measurement of (400) rocking curves demonstrated that all the heterostructures were initially coherently strained and had excellent crystallinity. Upon annealing deterioration of the crystal quality and progressive relaxation was observed on some of the samples while on others no relaxation or loss of crystalline quality was detected. These observations are consistent with the mechanical equilibrium theory predicting the critical thickness for pseudomorphic growth of lattice mismatch materials. However, the concept of critical stress needs to be invoked to account for the stability of dilute Si1−xGex alloy layers on Si.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.60.Bs Mechanical and acoustical properties
68.35.Gy Mechanical properties; surface strains
68.60.Dv Thermal stability; thermal effects

Formation of a nearly pure aluminum layer in beryllium using ion implantation

D. W. Brown, R. G. Musket, and Z. A. Munir

Appl. Phys. Lett. 54, 326 (1989); http://dx.doi.org/10.1063/1.100977 (3 pages) | Cited 2 times

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A nearly pure subsurface layer of an implanted element was created using aluminum implantation into beryllium. In particular, post‐implant annealing of polycrystalline beryllium samples implanted with 200 keV aluminum caused a dramatic increase in the peak aluminum concentration as determined by Rutherford backscattering. The effect was observed for all three doses studied: 0.46, 1.1, and 4.6×1018 Al/cm2 . For the 1.1×1018 Al/cm2 case, cross‐sectional transmission electron microscopy of the annealed sample revealed a distinct subsurface layer with the structure of crystalline aluminum. Auger sputter profiles of individual grains showed the layer purity to be as high as 98 at. % aluminum. However, there were indications that the layer formation and/or purity were grain dependent.
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61.72.up Other materials
61.72.Mm Grain and twin boundaries
68.35.Fx Diffusion; interface formation
68.35.Dv Composition, segregation; defects and impurities

Vertical to surface transmission electrophotonic device with selectable output light channels

Y. Tashiro, N. Hamao, M. Sugimoto, N. Takado, S. Asada, K. Kasahara, and T. Yanase

Appl. Phys. Lett. 54, 329 (1989); http://dx.doi.org/10.1063/1.100978 (3 pages) | Cited 21 times

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A photoeletronic bistable device with selectable light output channels has been fabricated for implementation in photonic switching and processing systems. The device is a variation of the vertical to surface transmission electrophotonic device. Output in the stimulated light emission mode was successfully obtained from different waveguide channels by external electronic switching. Output channels could be switched at a rate of 400 Mb/s. The potential versatility of this device has been experimentally confirmed in programmable or switchable optical interconnections.
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85.60.Dw Photodiodes; phototransistors; photoresistors
85.30.De Semiconductor-device characterization, design, and modeling
42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks

Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment

A. Callegari, P. D. Hoh, D. A. Buchanan, and D. Lacey

Appl. Phys. Lett. 54, 332 (1989); http://dx.doi.org/10.1063/1.100961 (3 pages) | Cited 73 times

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The Fermi level at the Ga oxide/GaAs interface has been unpinned by rf plasma cleaning the GaAs surface in H2 and N2. Following plasma cleaning, a Ga oxide film is reactively electron beam deposited onto the substrate. Metal‐oxide‐semiconductor (MOS) capacitors fabricated on these structures show good high‐frequency capacitance‐voltage characteristics. This indicates that the density of interface states has been reduced to ∼1011 eV−1 cm−2. The MOS capacitors are found to be stable in air after several months.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
81.65.-b Surface treatments
78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics

Ar ion laser‐assisted metalorganic molecular beam epitaxy of GaAs

H. Sugiura, R. Iga, T. Yamada, and M. Yamaguchi

Appl. Phys. Lett. 54, 335 (1989); http://dx.doi.org/10.1063/1.100962 (3 pages) | Cited 9 times

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Selective growth of GaAs using an Ar+ laser beam is reported. The laser irradiation during growth in the substrate temperature range 400–525 °C forms a GaAs spot of 400 μm in diameter. The spot growth rate increases up to 1.3 μm/h with laser power and does not depend on the type of substrate conductivity. Temperature rise due to the irradiation is revealed to be 7° at 120 °C for the laser power of 500 mW (laser beam diameter 400 μm). A concentric circle pattern can be formed by diffracting a laser beam. These results strongly suggest that the growth rate enhancement arises from the photodissociation of metalorganic molecules.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.61.Ey III-V semiconductors
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
79.20.Ds Laser-beam impact phenomena

Use of surface charging in x‐ray photoelectron spectroscopic studies of ultrathin dielectric films on semiconductors

W. M. Lau

Appl. Phys. Lett. 54, 338 (1989); http://dx.doi.org/10.1063/1.101450 (3 pages) | Cited 26 times

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The use of surface charging of a thin dielectric film on a semiconductor during x‐ray photoelectron spectroscopic analysis has been investigated. The binding energy shifts measured from 1.5 nm SiO2/p‐Si and 4 nm Si3N4/n‐InP indicate that a positive surface potential can be induced by the loss of photoelectrons in the dielectric, whereas a controllable negative potential can be applied by flooding the sample with low‐energy electrons. The measurements of the resultant depth‐dependent potentials in the oxide and in the semiconductor give useful information on the dielectric/semiconductor structure. For example, the results obtained using this technique show that in the case of SiO2/p‐Si, the Fermi level of the semiconductor at the interface was not pinned but in the case of Si3N4/n‐InP, it was pinned at 0.3 eV from the conduction‐band minimum. Moreover, the charging potential associated with a local impurity in the sample structure can be used to estimate the depth location of the impurity. Finally, the measurement of the degree of charging also gives information on the insulating properties of the dielectric.
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81.65.-b Surface treatments
07.85.-m X- and γ-ray instruments
73.25.+i Surface conductivity and carrier phenomena
77.55.-g Dielectric thin films

Hydrogenation and subsequent hydrogen annealing of GaAs on Si

K. C. Hsieh, M. S. Feng, G. E. Stillman, N. Holonyak, C. R. Ito, and M. Feng

Appl. Phys. Lett. 54, 341 (1989); http://dx.doi.org/10.1063/1.100963 (3 pages) | Cited 11 times

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The effects of hydrogenation and subsequent annealing on unintentionally doped GaAs layers grown directly on Si substrates by metalorganic chemical vapor deposition have been characterized by capacitance‐voltage measurements, Hall effect measurements, transmission electron microscopy (TEM), and energy dispersive spectroscopy (EDS). Significant reduction of the carrier concentration in the GaAs layers after hydrogen plasma exposure is obtained. TEM shows that the hydrogen plasma slightly etches the surface of the GaAs layers, and EDS demonstrates that the etched area becomes arsenic deficient and contains minute Ga particles. In addition, atomic hydrogen diffuses deeply along threading dislocations and microtwin interfaces into the GaAs layers and reacts with GaAs locally around the defects.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
66.30.J- Diffusion of impurities
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Thermal recovery process of the midgap‐state profile of light‐soaked undoped hydrogenated amorphous silicon

Hideharu Matsuura

Appl. Phys. Lett. 54, 344 (1989); http://dx.doi.org/10.1063/1.100964 (3 pages) | Cited 2 times

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Changes of midgap‐state profiles of light‐soaked undoped hydrogenated amorphous silicon are measured in the process of a 150 °C annealing by transient heterojunction‐monitored capacitance measurements. Monomolecular annealing kinetics are found to be suitable for explaining the results, and the thermal activation energy for annealing is determined at each energy position of midgap states. This activation energy decreases with an increase in the energy position measured from the conduction‐band edge.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.40.Rs Electrical and magnetic properties related to treatment conditions

Coherent Si growth on GaAs substrates by vapor phase deposition

K. Tamamura, K. Akimoto, and Y. Mori

Appl. Phys. Lett. 54, 347 (1989); http://dx.doi.org/10.1063/1.100965 (3 pages) | Cited 2 times

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Epitaxial Si layers with low dislocation density were grown on GaAs substrates by pyrolysis using disilane. The dislocation density evaluated from SECCO etching (HF:H2 SO4 :K2 Cr2 O7 =100 cc:50 cc:2g) was less than 104/cm2, which is lower by two orders of magnitude than that of the GaAs layer on Si substrates. We found that the electron mobility of Si layers on GaAs substrates could be raised by decreasing the growth rate and a high mobility value the same as that of a homoepitaxial layer was obtained, although the Si layers were contaminated by an arsenic impurity of 1018 cm−3 .
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.50.Dn Low-field transport and mobility; piezoresistance
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

On the possibility of transistor action based on quantum interference phenomena

Fernando Sols, M. Macucci, U. Ravaioli, and Karl Hess

Appl. Phys. Lett. 54, 350 (1989); http://dx.doi.org/10.1063/1.100966 (3 pages) | Cited 186 times

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A theoretical study of quantum interference phenomena in a T‐shaped semiconductor structure is presented. Transmission and reflection coefficients are computed by use of a tight‐binding Green function technique. As expected, the results resemble the well‐known solutions for the electromagnetic field in waveguides with the main difference that the penetration of the wave function of the electrons can be controlled by external voltages. We conclude that transistor action based on quantum interference should be observable in such structures, and we present general results for the functional dependences of the transmission coefficient which corresponds to a transconductance.
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85.30.De Semiconductor-device characterization, design, and modeling
72.20.Dp General theory, scattering mechanisms
72.10.Bg General formulation of transport theory

High quality epitaxial ZnSe and the relationship between electron mobility and photoluminescence characteristics

Konstantinos P. Giapis, Da‐Cheng Lu, and Klavs F. Jensen

Appl. Phys. Lett. 54, 353 (1989); http://dx.doi.org/10.1063/1.100967 (3 pages) | Cited 14 times

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High quality epitaxial layers of nominally undoped ZnSe have been grown by metalorganic chemical vapor deposition at low temperature (325 °C) and pressure (30 Torr), using dimethylzinc and hydrogen selenide. All layers were unintentionally doped n type with net carrier concentrations of 6.4×1014–1.5×1016 cm−3 and exhibited very high mobility at room temperature (up to 500 cm2/V s) as well as at 77 K, where the measured value of 9250 cm2/V s is the highest so far reported for vapor phase growth. Additional evidence for the high quality of the material is provided by photoluminescence. Experimental results indicate a correlation between the photoluminescence characteristics and the electrical properties that may be useful in assessing the quality of ZnSe films.
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73.50.Dn Low-field transport and mobility; piezoresistance
73.61.Ga II-VI semiconductors
78.55.Cr III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Influence of interfacial contamination on the structure and barrier height of Cr/GaAs Schottky contacts

Z. Liliental‐Weber, N. Newman, J. Washburn, E. R. Weber, and W. E. Spicer

Appl. Phys. Lett. 54, 356 (1989); http://dx.doi.org/10.1063/1.100968 (3 pages) | Cited 4 times

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The structure of as‐deposited and annealed Cr/GaAs Schottky contacts was investigated by high resolution and analytical electron microscopy. The Schottky barrier height for contacts prepared by cleavage and in situ metallization in ultrahigh vacuum was stable upon annealing up to 370 °C in N2. In contrast, the contacts prepared on air‐exposed substrates show an increase of the barrier height by 80 meV during annealing in the same range of temperatures. Comparing these two types of contacts, distinct differences in the grain size, presence of an oxide layer at the interface, and change in stoichiometry in the substrate beneath the contact were detected.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Ns Metal-nonmetal contacts
61.72.Mm Grain and twin boundaries
85.30.De Semiconductor-device characterization, design, and modeling

Self‐consistent resonant states and phase coherence in a wide double‐barrier structure

K. K. Choi, P. G. Newman, P. A. Folkes, and G. J. Iafrate

Appl. Phys. Lett. 54, 359 (1989); http://dx.doi.org/10.1063/1.100969 (3 pages) | Cited 9 times

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We present experimental tunneling current‐voltage characteristics for a wide (1040‐Å‐wide well) double‐barrier structure; concomitant differential conductance data show a series of oscillations in the differential conductance‐voltage characteristics. By using a self‐consistent analysis, we show that the observed conductance oscillations arise predominantly from the structure of the local density of states of the confining well rather than the density of states of the global structure; this result shows that there is a lack of long‐range phase coherence for the tunneling electrons in this structure. Also, in this analysis we determine the importance of the band nonparabolicity.
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Electronic passivation of GaAs surfaces through the formation of arsenic—sulfur bonds

C. J. Sandroff, M. S. Hegde, L. A. Farrow, C. C. Chang, and J. P. Harbison

Appl. Phys. Lett. 54, 362 (1989); http://dx.doi.org/10.1063/1.101451 (3 pages) | Cited 104 times

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X‐ray photoelectron spectroscopy reveals that the remarkable electronic quality of GaAs/sulfide interfaces can be ascribed to the formation of AsxSy phases which grow on an oxide‐free GaAs surface. While one of these phases is akin to As2S3, another shows significant in‐plane S—S bonding. Raman experiments indicate that the band bending on this disulfide‐ terminated surface has been reduced to 0.12 eV.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.55.Nq Composition and phase identification
81.65.-b Surface treatments
78.30.Fs III-V and II-VI semiconductors

X‐ray photoelectron spectroscopy of ammonium sulfide treated GaAs (100) surfaces

B. A. Cowans, Z. Dardas, W. N. Delgass, M. S. Carpenter, and M. R. Melloch

Appl. Phys. Lett. 54, 365 (1989); http://dx.doi.org/10.1063/1.100970 (3 pages) | Cited 47 times

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The effect of an ammonium sulfide treatment on the GaAs (100) surface has been investigated by x‐ray photoelectron spectroscopy. The treatment produces a slight Ga enrichment on the surface and leaves roughly 0.6 of a monolayer of sulfide which inhibits initial oxidation of the surface. The sulfide is not lost as the surface becomes oxidized but appears to remain near the GaAs/oxide interface. Furthermore, in the oxidized layer, As oxide is preferentially drawn to the surface relative to Ga oxide.
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81.40.Rs Electrical and magnetic properties related to treatment conditions
81.65.-b Surface treatments
68.35.Dv Composition, segregation; defects and impurities
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
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