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6 Feb 1989

Volume 54, Issue 6, pp. 475-592

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Monolithic integration of GaAs/GaAlAs buried‐heterostructure orthogonal facet laser and optical waveguide

H. Ribot, P. Sansonetti, J. Brandon, M. Carre, L. Menigaux, R. Azoulay, and N. Bouadma

Appl. Phys. Lett. 54, 475 (1989); http://dx.doi.org/10.1063/1.100954 (3 pages)

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Monolithic integration of a quarter‐circle laser evanescently coupled to an optical waveguide located below the active layer is demonstrated on GaAs. The curved resonator consists of a 45‐μm‐long straight part and a quarter circle with a curvature radius of 150 μm. The component exhibits a threshold current of 50 mA in a pulsed regime. A 10 mW emission is measured from a 415‐μm‐long tangential straight waveguide for an injection current of 140 mA.
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42.82.-m Integrated optics
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.79.Gn Optical waveguides and couplers

Sensitivity of direct electro‐optic sampling to adjacent signal lines

J. L. Freeman, D. M. Bloom, S. R. Jefferies, and B. A. Auld

Appl. Phys. Lett. 54, 478 (1989); http://dx.doi.org/10.1063/1.100955 (3 pages) | Cited 2 times

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A nonzero potential at the backside of a GaAs substrate causes errors in direct electro‐optic measurements. We examine how the backside potential depends on the arrangement of the frontside conductors for digital‐like structures. Ground‐to‐ground spacing, or conductor pitch, most strongly determines the magnitude of this electro‐optic error. A single driven line in a 30 μm pitch array of grounded parallel lines on 20 mil GaAs contributes a backside potential 3% of the applied signal.
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78.20.Jq Electro-optical effects
85.40.Qx Microcircuit quality, noise, performance, and failure analysis
07.60.-j Optical instruments and equipment

Saturation of the nonlinear refractive‐index change in a semiconductor‐doped glass channel waveguide

W. C. Banyai, N. Finlayson, C. T. Seaton, G. I. Stegeman, M. O’Neill, T. J. Cullen, and C. N. Ironside

Appl. Phys. Lett. 54, 481 (1989); http://dx.doi.org/10.1063/1.101361 (3 pages) | Cited 3 times

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The saturated nonlinear refractive‐index change in a CdSxSe1−x semiconductor‐doped glass channel waveguide was measured with a picosecond pump‐probe Mach–Zehnder interferometer at photon energies below the band gap. The pump‐probe configuration permitted the resolution of competing thermal and electronic nonlinearities. The significance of the results for all‐optical switching is discussed.
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42.79.Gn Optical waveguides and couplers
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Characteristics of the off‐centered apertured mirror external cavity laser array

C. J. Chang‐Hasnain, A. Dienes, J. R. Whinnery, W. Streifer, and D. R. Scifres

Appl. Phys. Lett. 54, 484 (1989); http://dx.doi.org/10.1063/1.100956 (3 pages) | Cited 8 times

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We present experimental data and a self‐consistent analysis to explain the behavior of laser arrays in an off‐centered apertured mirror external cavity. The eigensolutions of the composite cavity are superpositions of the orthonormal modes supported by the laser array itself. The thresholds, near‐ and far‐field intensity distributions of the cavity modes are calculated for various mirror positions and widths. Good agreement is obtained between the calculations and the experimental data.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Growth and characterization of 4‐(N,N‐dimethylamino)‐3‐acetamidonitrobenzene single‐crystal cored fibers

P. Kerkoc, Ch. Bosshard, H. Arend, and P. Günter

Appl. Phys. Lett. 54, 487 (1989); http://dx.doi.org/10.1063/1.100957 (3 pages) | Cited 13 times

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4‐(N,N‐dimethylamino)‐3‐acetamidonitrobenzene (DAN) single‐crystal cored fibers with high optical nonlinearity were grown in glass capillaries with diameters between 7 and 40 μm. X‐ray diffraction experiments showed that DAN crystals grown in the glass capillaries have an orientation with the a axis [100] along the fiber axis. This favorable orientation with the twofold axis perpendicular to the fiber axis allows the full use of the nonvanishing second‐order nonlinear susceptibilities d22, d23, and d34. First experiments in a 20‐mm‐long fiber with a diameter d=7 μm showed a peak conversion efficiency of about 10−4 for frequency doubling of the 1.064 μm line of a pulsed Nd:YAG laser with a fundamental peak power P(ω) =57.1 W.
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42.81.Dp Propagation, scattering, and losses; solitons
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.81.Bm Fabrication, cladding, and splicing

Terahertz beams

Ch. Fattinger and D. Grischkowsky

Appl. Phys. Lett. 54, 490 (1989); http://dx.doi.org/10.1063/1.100958 (3 pages) | Cited 147 times

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We have generated freely propagating, diffraction‐limited beams of single‐cycle 0.5 THz electromagnetic pulses from a 5‐mm‐diam coherent source. After propagating 100 cm in air, there was little change in the measured subps pulse shape, even though the signal strength was reduced by 20 times compared to the strength at 10 cm.
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84.40.Ba Antennas: theory, components and accessories
42.25.Lc Birefringence
03.50.De Classical electromagnetism, Maxwell equations
41.20.Jb Electromagnetic wave propagation; radiowave propagation

Rectangular and L‐shaped GaAs/AlGaAs lasers with very high quality etched facets

A. Behfar‐Rad, S. S. Wong, J. M. Ballantyne, B. A. Soltz, and C. M. Harding

Appl. Phys. Lett. 54, 493 (1989); http://dx.doi.org/10.1063/1.100960 (3 pages) | Cited 7 times

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GaAs/AlGaAs semiconductor lasers with very high quality etched facets have been fabricated. Laser facets are formed by the chemically assisted ion beam etching technique with SiO2 as the etch mask. The threshold current densities of lasers produced with this technique are almost identical to comparable lasers with one etched and one cleaved facet. L‐shaped lasers, which make use of total internal reflection, have also been fabricated. The threshold current density of L‐shaped lasers is similar to that of rectangular lasers with comparable cavity length.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems

High repetition rate femtosecond dye amplifier using a laser diode pumped neodymium:YAG laser

B. Zysset, M. J. LaGasse, J. G. Fujimoto, and J. D. Kafka

Appl. Phys. Lett. 54, 496 (1989); http://dx.doi.org/10.1063/1.100934 (3 pages) | Cited 1 time

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A high repetition rate femtosecond dye amplifier is demonstrated using a laser diode pumped Q‐switched Nd:YAG laser. Amplification of wavelength tunable 300 fs pulses from a synchronously mode‐locked rhodamine dye laser is achieved with a saturated gain of 70 and a small gain of 200 at a repetition rate of 800 Hz. Maximum pulse energies of 40 nJ are obtained, and pulse compression to as short as 30 fs is demonstrated.
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42.55.Mv Dye lasers
42.65.Re Ultrafast processes; optical pulse generation and pulse compression
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

InGaAs‐GaAs strained‐layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor deposition

P. K. York, K. J. Beernink, G. E. Fernández, and J. J. Coleman

Appl. Phys. Lett. 54, 499 (1989); http://dx.doi.org/10.1063/1.100935 (3 pages) | Cited 37 times

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Data are presented on long‐wavelength (λ>1 μm) strained‐layer InGaAs‐GaAs quantum well buried heterostructure lasers grown by a two‐step metalorganic chemical vapor deposition (MOCVD) process. Wet chemical etched mesas with an active region width of 3.5 μm are formed in a step‐graded InGaAs‐GaAs quantum well structure using an oxide mask. Selective MOCVD regrowth is used to form the buried heterostructure. Data are presented for devices having output powers of greater than 130 mW/facet, pulsed threshold currents of less than 7 mA, and internal quantum efficiencies of greater than 60%, for an emission wavelength of 1.074 μm. The near‐field patterns indicate stable index‐guided fundamental mode operation to greater than 30Ith.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Phillips–Tikhonov regularization of plasma image reconstruction with the generalized cross validation

Naofumi Iwama, Hiromasa Yoshida, Hitoshi Takimoto, Yun Shen, Shuichi Takamura, and Takashige Tsukishima

Appl. Phys. Lett. 54, 502 (1989); http://dx.doi.org/10.1063/1.100912 (3 pages) | Cited 15 times

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The use of the Phillips–Tikhonov regularization is proposed for numerically stabilizing the ill‐conditioned plasma image reconstructions. An objective function to be minimized leads to a linear estimator of the image intensity distribution and, with the aid of the singular value decomposition, makes it possible to use the generalized cross validation for optimizing a regularization parameter. An excellent behavior of the estimator with computational facility is obtained on the Hα emission computerized tomography of a toroidal plasma.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
42.30.Va Image forming and processing
52.55.Jd Magnetic mirrors, gas dynamic traps
52.25.Os Emission, absorption, and scattering of electromagnetic radiation

Structured ion energy distribution in radio frequency glow‐discharge systems

Ch. Wild and P. Koidl

Appl. Phys. Lett. 54, 505 (1989); http://dx.doi.org/10.1063/1.100913 (3 pages) | Cited 77 times

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The energy distribution of ions incident on the cathode (smaller electrode) in a capacitively coupled asymmetric rf discharge was measured for different process parameters. It was found that the ion energy distribution exhibits a characteristic series of peaks, which are explained by the high‐frequency modulation of the sheath potential combined with charge exchange in the cathode sheath. A parametric model of the ion transport through the sheath is presented showing that the position of the peaks in the ion energy distribution depends only on a discharge scaling parameter and the spatial variation of the electric field ϵ(x) across the sheath region. Good agreement between theoretical and experimental ion energy distributions in an argon discharge is obtained for an electric field variation ϵ(x)∼xν with ν in the range 0.55–0.7.
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52.80.Pi High-frequency and RF discharges
52.80.Hc Glow; corona
52.40.Hf Plasma-material interactions; boundary layer effects
52.70.Nc Particle measurements

Analysis of the H2 vibrational distribution in a hydrogen discharge

J. R. Hiskes and A. M. Karo

Appl. Phys. Lett. 54, 508 (1989); http://dx.doi.org/10.1063/1.100914 (3 pages) | Cited 31 times

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The H2(v″) vibrational distribution observed in a medium‐density hydrogen discharge is analyzed in terms of standard collisional processes. All processes in the model are specified independently of adjustable parameters. The calculated distribution is found to be a sensitive function of the wall relaxation process. The warm‐gas‐temperature discharge analyzed here leads to a substantially more rapid H2(v″) wall relaxation than is inferred from cold‐gas systems.
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52.80.Tn Other gas discharges
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
52.20.Dq Particle orbits
34.80.Gs Molecular excitation and ionization

Hydrogen and oxygen content of silicon nitride films prepared by multipolar plasma‐enhanced chemical vapor deposition

Pierre Boher, Monique Renaud, L. J. van IJzendoorn, and Yves Hily

Appl. Phys. Lett. 54, 511 (1989); http://dx.doi.org/10.1063/1.100915 (3 pages) | Cited 6 times

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Very low H content SiN films have been deposited by a multipolar plasma‐enhanced deposition system at room temperature. The main plasma parameters which control the hydrogen and oxygen incorporation in the films have also been analyzed and optimized.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Nq Composition and phase identification
52.75.-d Plasma devices

Optimization of the efficiency in gyrotron backward‐wave oscillator via a tapered axial magnetic field

A. K. Ganguly and S. Ahn

Appl. Phys. Lett. 54, 514 (1989); http://dx.doi.org/10.1063/1.100916 (3 pages) | Cited 12 times

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The efficiency of a gyrotron backward‐wave oscillator (gyro‐BWO) in the presence of a tapered axial guide magnetic field is calculated from a three‐dimensional self‐consistent theory. The saturation efficiency has a low value in the range 10–15% when the external magnetic field is uniform. However, the efficiency can be enhanced to over 30% by a small taper in the magnetic field. Numerical results are shown for operation in the TE11 mode of a cylindrical waveguide.
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84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
52.35.Qz Microinstabilities (ion-acoustic, two-stream, loss-cone, beam-plasma, drift, ion- or electron-cyclotron, etc.)
84.40.Az Waveguides, transmission lines, striplines

Study of soft‐x‐ray generation by laser‐heating solid and gaseous tantalum plasmas with subpicosecond pulses

H. W. K. Tom and O. R. Wood

Appl. Phys. Lett. 54, 517 (1989); http://dx.doi.org/10.1063/1.100917 (3 pages) | Cited 36 times

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The efficiency of x‐ray emission in the 17–35 nm region from laser‐heated solid and gaseous density Ta plasmas has been compared. An x‐ray conversion efficiency of 0.4% from a solid density Ta plasma requires a laser fluence of 200 J/cm2 whereas the same efficiency in a gaseous Ta plasma with optimal density profile requires only 3 J/cm2 . This is due to ultrarapid thermal diffusion in the solid and to the shorter attenuation length and duration of x rays emitted from the heated solid density plasma.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
07.85.-m X- and γ-ray instruments

Intermixing of InGaAs/InP multiple quantum well structures by Ga implantation

Hitoshi Sumida, Hajime Asahi, S. Jae Yu, Kumiko Asami, Shun‐ichi Gonda, and Hisao Tanoue

Appl. Phys. Lett. 54, 520 (1989); http://dx.doi.org/10.1063/1.100918 (3 pages) | Cited 17 times

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The effect of Ga implantation and thermal annealing on InGaAs/InP multiple quantum well structures is investigated by photoluminescence (PL) and sputtering Auger electron spectroscopy. It is found that the interdiffusion of both column III and column V atoms occurs at the interfaces between InP barrier and InGaAs well layers, but the degree of intermixing near the sample surface is small. The variations of PL peak energy shift with annealing and dose suggest that the PL peak shift is attributed to a combination of intermixing and stress.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.Fx Diffusion; interface formation
61.72.U- Doping and impurity implantation
78.55.Cr III-V semiconductors

Crystal structure analysis of epitaxial silicon films formed by a low kinetic energy particle process

T. Ohmi, T. Ichikawa, T. Shibata, and H. Iwabuchi

Appl. Phys. Lett. 54, 523 (1989); http://dx.doi.org/10.1063/1.100919 (3 pages) | Cited 10 times

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Formation of high quality epitaxial silicon films at 350 °C by a low kinetic energy particle process has been verified by a series of crystal structure analyses performed on these films. It was found that the crystallinity of a grown film is drastically changed by the energy of Ar ions concurrently bombarding the growing silicon film surface. The epitaxially grown film with an optimum ion bombardment energy is defect‐free both at the interface and in the bulk of the film as revealed by high‐resolution transmission electron microscopy.
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81.15.Np Solid phase epitaxy; growth from solid phases
68.55.-a Thin film structure and morphology
81.15.Jj Ion and electron beam-assisted deposition; ion plating
61.80.Jh Ion radiation effects

Reduced defect density in silicon‐on‐insulator structures formed by oxygen implantation in two steps

J. Margail, J. Stoemenos, C. Jaussaud, and M. Bruel

Appl. Phys. Lett. 54, 526 (1989); http://dx.doi.org/10.1063/1.101458 (3 pages) | Cited 39 times

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Up to now, the best quality silicon‐on‐insulator material formed by high‐dose oxygen ion implantation has been produced by conventional one step implantation and subsequent high‐temperature annealing. Nevertheless, it still contains structural defects: threading dislocations in the top silicon film and silicon islands inside the buried SiO2 layer. This letter presents a new method for producing silicon‐on‐insulator structures using sequences of oxygen ion implantation and high‐temperature annealing steps. The structures obtained using this method are nearly free from defects observable by electron microscopy. In particular, no threading dislocations could be observed and the density of silicon islands is reduced by several orders of magnitude. A mechanism of Si interstitial atoms migration is proposed to explain these observations in accordance with other studies.
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68.35.Dv Composition, segregation; defects and impurities
61.80.Jh Ion radiation effects
61.72.Bb Theories and models of crystal defects
66.30.J- Diffusion of impurities

Photoionization cross section of In0.49Ga0.51P:Fe

T. Takanohashi and K. Nakajima

Appl. Phys. Lett. 54, 529 (1989); http://dx.doi.org/10.1063/1.100920 (3 pages) | Cited 2 times

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We determined spectral dependence of the photoionization cross section of the Fe acceptor in In0.49Ga0.15P by photocapacitance spectroscopy. As a result of the alloy effect we observed the nonexponential photocapacitance transient. We treated it with a model of the energetically broadened defect level. Optical thresholds for 5E and 5T2 of the crystal‐field‐split Fe acceptor level are 0.78 and 1.15 eV at 77 K. The small difference of 40 meV between the optical and thermal activation energies for the transition from the valence band to 5E reveals the weak coupling between the Fe acceptor level and the lattice vibration of InGaP.
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71.55.Eq III-V semiconductors

Electric field induced localization in GaAlAs‐GaAs superlattices

S. L. Feng, J. C. Bourgoin, and G. G. Qin

Appl. Phys. Lett. 54, 532 (1989); http://dx.doi.org/10.1063/1.100921 (2 pages) | Cited 8 times

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Using deep level transient spectroscopy we have observed electron emission in a 50–50 Å uniformly n‐type doped GaAs‐GaAlAs superlattice placed in the space‐charge region of a Schottky barrier. This emission arises from carriers localized in the wells by the electric field above the barriers. This observation demonstrates that electric field induced localization in superlattices can be monitored using capacitance techniques.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
73.61.Ey III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Room‐temperature exciton electroabsorption in partially intermixed GaAs/AlGaAs quantum well waveguides

J. D. Ralston, W. J. Schaff, D. P. Bour, and L. F. Eastman

Appl. Phys. Lett. 54, 534 (1989); http://dx.doi.org/10.1063/1.100922 (3 pages) | Cited 34 times

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Perpendicular field electroabsorption is measured for the first time in GaAs/AlGaAs quantum well (QW) structures which have been modified via partial interdiffusion of the well and barrier layers. In waveguide samples containing two GaAs QWs, the impurity‐free vacancy diffusion process is shown to allow continuously variable permanent band‐edge energy shifts of at least 40 meV while still retaining clearly resolved heavy hole and light hole exciton absorption peaks at room temperature. Furthermore, the quantum‐confined Stark effect is shown to be preserved in the partially intermixed structures, greatly expanding the range of photon energies over which such behavior can be utilized in a single epitaxially grown sample. Transmission resonance calculations are used to model the observed enhanced electric‐field‐induced broadening of exciton absorption peaks in the partially intermixed QWs due to increased carrier tunneling through the graded and lowered potential barriers.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Medium‐energy sputtering of thin films: The approach to percolation

N. Papandreou, P. Nedellec, and J. Rosenblatt

Appl. Phys. Lett. 54, 537 (1989); http://dx.doi.org/10.1063/1.100923 (3 pages) | Cited 1 time

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Thin Pd films are irradiated with 100 keV Xe ions and their resistance measured in situ. The evolution of resistance as a function of the fluence is found to display invariance properties, which lead to a characterization of the film structure and morphology. The calculations emphasize the role of two features of medium‐energy sputtering: the thickness dependence of the sputtering yield and the applicability of Poisson statistics to the process of hole creation in the film.
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79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.55.-a Thin film structure and morphology
73.61.At Metal and metallic alloys
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Electric field depressed emission from a Au/GaAs near‐interface state

G. Marrakchi, M. Gavand, G. Guillot, E. Rosencher, and A. Nouailhat

Appl. Phys. Lett. 54, 540 (1989); http://dx.doi.org/10.1063/1.100924 (3 pages)

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Continuous wave laser annealing was carried out on liquid phase epitaxy GaAs material. A new defect termed PL1 localized near the Au/GaAs interface was detected by deep level transient spectroscopy. This defect is related to the formation of an oxide layer at the GaAs surface during the treatment. Completely new physical behavior of this defect is observed. Deep level optical spectroscopy and deep level transient spectroscopy have shown that the emission of PL1 is depressed by the electric field. This result is discussed in view of other electric field effects.
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73.20.Hb Impurity and defect levels; energy states of adsorbed species
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)
81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
68.35.Dv Composition, segregation; defects and impurities

Optoelectronic dynamic random access memory cell utilizing a three‐terminal N‐channel self‐aligned double‐heterostructure optoelectronic switch

G. W. Taylor, D. L. Crawford, and J. G. Simmons

Appl. Phys. Lett. 54, 543 (1989); http://dx.doi.org/10.1063/1.100925 (3 pages) | Cited 5 times

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The double‐heterostructure optoelectronic switch is demonstrated as a novel dynamic random access optoelectronic memory cell in an N‐channel self‐aligned three‐terminal configuration. The cell employs a single polarity of bias and XY selectivity using the inversion channel contact and the optical input/output port. The switching powers, delays, and refresh capability offer the promise for large‐scale integrated circuits.
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85.60.-q Optoelectronic devices
42.79.Ta Optical computers, logic elements, interconnects, switches; neural networks
42.79.Vb Optical storage systems, optical disks
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

Resonant interband tunnel diodes

Mark Sweeny and Jingming Xu

Appl. Phys. Lett. 54, 546 (1989); http://dx.doi.org/10.1063/1.100926 (3 pages) | Cited 77 times

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Novel device structures are proposed, incorporating quantum wells and a pn diode structure. Such a device combines the structure and behavior of both resonant tunneling diodes and conventional tunnel diodes, leading to high speed and low excess current. There is interband tunneling between the conduction band and the valence band, as is in the case for a tunnel diode, but carriers are confined within quantum wells. Under small forward bias the diodes are expected to behave in a manner very similar to that of a tunnel diode formed of bulk material. Under large forward bias, however, the devices act much like resonant tunneling diodes, and display additional negative resistance regions.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.80.Ey III-V and II-VI semiconductors
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