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13 Feb 1989

Volume 54, Issue 7, pp. 597-677

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Increased Tc of bismuth strontium calcium copper oxide superconductor by praseodymium substitution

S. Geller and K.‐Y. Wu

Appl. Phys. Lett. 54, 669 (1989); http://dx.doi.org/10.1063/1.101467 (2 pages) | Cited 3 times

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It is shown that a small substitution of praseodymium for bismuth as in Pr0.05Bi1.95Sr2CaCu2.2O8.2+δ produces a significant increase, 13 K, in the onset temperature, 7 K in the temperature at which the whole specimen is superconducting, and 10 K in the transition‐midpoint temperature relative to Bi2Sr2CaCu2.2O8.2+δ. Unfortunately the transition is broadened, 20 K versus 14 K. Doubling the amount of praseodymium substitution causes the occurrence of extraneous phase(s), the effect of which is seen only in the resistance versus temperature data, and does not indicate any additional significant increases in the aforementioned temperatures.
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74.25.Sv Critical currents
74.62.Bf Effects of material synthesis, crystal structure, and chemical composition
74.70.-b Superconducting materials other than cuprates

Tertiary butylarsine grown GaAs solar cell

V. S. Sundaram, B. A. Arau, J. E. Avery, A. L. Bailey, G. R. Girard, H. E. Hager, A. G. Thompson, and L. M. Fraas

Appl. Phys. Lett. 54, 671 (1989); http://dx.doi.org/10.1063/1.100883 (3 pages) | Cited 14 times

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High quality, intentionally doped (both p and n type) gallium arsenide layers have been grown using trimethylgallium and tertiary butylarsine in a low‐pressure metalorganic chemical vapor deposition reactor. Using an alternate arsenic source, namely, tertiary butylarsine, a concentrator GaAs solar cell has been fabricated. Under 37 sun, air mass 1.5 illumination, the cell had an open‐circuit voltage of 1.095 V, a fill factor of 83%, and an overall efficiency of 18.5%.
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84.60.Jt Photoelectric conversion
72.40.+w Photoconduction and photovoltaic effects
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.30.Kk Junction diodes

High‐power traveling‐wave tube amplifier

D. Shiffler, John A. Nation, and C. B. Wharton

Appl. Phys. Lett. 54, 674 (1989); http://dx.doi.org/10.1063/1.100884 (3 pages) | Cited 9 times

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A high‐power X‐band traveling‐wave tube amplifier has been fabricated and tested. The tube has a 17 dB gain at 8.76 GHz and an output power of order 10 MW. The electron beam has an energy of 850 keV and a beam current of 1 kA. Results are presented showing the characteristics of the amplifier.
Show PACS
84.40.Fe Microwave tubes (e.g., klystrons, magnetrons, traveling-wave, backward-wave tubes, etc.)
52.27.Ny Relativistic plasmas
41.75.Ht Relativistic electron and positron beams
52.59.Px Hard X-ray sources
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Erratum: Surface‐emitting, multiple quantum well GaAs/AlGaAs laser with wavelength‐resonant periodic gain medium [Appl. Phys. Lett. 53, 1678 (1988)]

M. Y. A. Raja, S. R. J. Brueck, M. Osiński, C. F. Schaus, J. G. McInerney, T. M. Brennan, and B. E. Hammons

Appl. Phys. Lett. 54, 677 (1989); http://dx.doi.org/10.1063/1.101381 (1 page)

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Abstract Unavailable
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.By Design of specific laser systems
99.10.Cd Errata
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