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20 Feb 1989

Volume 54, Issue 8, pp. 681-777

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Multifrequency room‐temperature continuous diode and Ar∗ laser‐pumped Er3+ laser emission between 2.66 and 2.85 μm

F. Auzel, S. Hubert, and D. Meichenin

Appl. Phys. Lett. 54, 681 (1989); http://dx.doi.org/10.1063/1.100885 (3 pages) | Cited 46 times

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cw pumped laser emission on six different wavelengths is obtained for the first time in a LiYF4:15% Er3+ crystal at room temperature under diode laser excitation for 2.66, 2.716, 2.81 μm emissions and under argon ion laser excitation for 2.77, 2.81, 2.84, 2.85 μm emissions. Threshold of 5 mW absorbed power at 0.795 μm (diode) is obtained for the 2.81 μm wavelength. Time and power evolution of the laser emissions are presented. The type of up‐conversion taking place during 2.81 μm laser emission is shown to be of the addition of photons by energy transfer (APTE) type involving a two‐photon summation which depopulates the 4I11/2 rather than the 4I13/2 state as up to now believed.
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42.55.Rz Doped-insulator lasers and other solid state lasers
85.60.Jb Light-emitting devices
85.30.De Semiconductor-device characterization, design, and modeling
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Photorefractive waveguides and nonlinear mode coupling effects

Baruch Fischer and Mordechai Segev

Appl. Phys. Lett. 54, 684 (1989); http://dx.doi.org/10.1063/1.100886 (3 pages) | Cited 16 times

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Nonlinear photorefractive wave mixing in waveguides provides unusual intermode coupling effects which are independent of the overall light intensities. We present and demonstrate processes in which high‐order modes of a guided beam are converted into the low modes (funnel‐like) and vice versa (antifunnel‐like). We also show capabilities of launching and amplifying a guided beam by pumping the waveguide laterally. Another use of polarization state conversion is discussed.
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42.79.Gn Optical waveguides and couplers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Novel scalloped‐mirror diffraction‐coupled InGaAsP/InP buried‐heterostructure laser arrays

D. Yap, J. N. Walpole, and Z. L. Liau

Appl. Phys. Lett. 54, 687 (1989); http://dx.doi.org/10.1063/1.100864 (3 pages) | Cited 1 time

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Diffraction‐coupled arrays of InGaAsP/InP buried‐heterostructure lasers are reported. These arrays, fabricated by ion beam assisted etching and mass transport, have a novel scalloped mirror at the end of the coupling section that greatly increases the coupling between stripes and reduces the feedback into the same stripe. Far‐field patterns show sharply defined lobes that are as narrow as 3°. An output section with cylindrical mirrors has been incorporated into the arrays to increase the power in the central far‐field lobe. Threshold currents as low as 150 mA have been obtained for eight‐stripe arrays.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Generation of high‐power, high repetition rate, subpicosecond pulses by intracavity chirped pulse regenerative amplification

Li Yan, P.‐T. Ho, Chi H. Lee, and G. L. Burdge

Appl. Phys. Lett. 54, 690 (1989); http://dx.doi.org/10.1063/1.100865 (3 pages) | Cited 1 time

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A neodymium phosphate glass regenerative amplifier is used for both pulse energy amplification and spectral broadening. After compression by a grating pair, 0.55 ps pulses of 11 μJ energy are generated at a 370 Hz repetition rate.
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42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Effects of amorphous silicon capping layer on arsenic redistribution during TiSi2 formation

S. W. Kang, John S. Chun, and S. C. Park

Appl. Phys. Lett. 54, 693 (1989); http://dx.doi.org/10.1063/1.101468 (3 pages) | Cited 1 time

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During titanium silicide (TiSi2) formation by rapid thermal annealing (RTA), the redistribution of implanted arsenic was investigated by means of Auger electron spectroscopy (AES) and secondary‐ion mass spectroscopy (SIMS). By using 30 nm amorphous silicon (a‐Si) film deposited sequentially on 50 nm titanium film without breaking the vacuum, the As dopant redistribution is suppressed due to the reduction of consumption of silicon substrate (Si‐sub) during TiSi2 formation. The AES shows that the silicon, which is required for TiSi2 formation, is supplied from the a‐Si film more rapidly than from the Si‐sub. Also, the conversion of deposited Ti film into TiSi2 is complete because the a‐Si film on Ti film prevents the infiltration of oxygen impurity into the Ti film during the exposure to air before annealing.
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66.30.J- Diffusion of impurities
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.At Metal and metallic alloys
68.35.Fx Diffusion; interface formation

Compensation of the temperature dependence of the optical characteristics of twisted nematic liquid‐crystal displays using a single chiral dopant

F. Leenhouts, S. Kelly, and A. Villiger

Appl. Phys. Lett. 54, 696 (1989); http://dx.doi.org/10.1063/1.101360 (2 pages) | Cited 1 time

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Chiral dopants are reported which enable one to compensate for the temperature dependence of the optical characteristics of twisted nematic liquid‐crystal displays. Temperature compensation is achieved by the addition of a small amount of only one chiral compound to the liquid‐crystal mixture. This procedure is more precise and less laborious than a previously reported method, which utilizes two or more chiral dopants.
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85.60.Pg Display systems
78.20.Jq Electro-optical effects
61.30.-v Liquid crystals

Photoemission investigation of the room‐temperature adsorption of trimethylgallium on GaAs surface

Pierre Claverie, Kosuke Ueyama, Shigeru Maeda, Hidetoshi Namba, and Haruo Kuroda

Appl. Phys. Lett. 54, 698 (1989); http://dx.doi.org/10.1063/1.100866 (2 pages) | Cited 7 times

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The adsorption of trimethylgallium (TMG) on GaAs (110) surface at room temperature was studied with ultraviolet photoemission spectroscopy by use of synchrotron radiation. The adsorption was found to saturate for TMG exposure as low as 3 langmuirs (L) resulting in a coverage of less than 0.1 monolayer. It is concluded that TMG molecules are adsorbed on the GaAs surface without decomposition.
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68.43.-h Chemisorption/physisorption: adsorbates on surfaces
68.03.Fg Evaporation and condensation of liquids
68.43.Mn Adsorption kinetics
81.65.-b Surface treatments

Ga1−xAlxAs purification during its liquid phase epitaxial growth in the presence of Yb

J. Raczynska, K. Fronc, J. M. Langer, K. Lischka, and A. Pesek

Appl. Phys. Lett. 54, 700 (1989); http://dx.doi.org/10.1063/1.100867 (3 pages) | Cited 8 times

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The influence of Yb added to the melt, on the near‐band‐gap emission of Ga1−xAlxAs grown by liquid phase epitaxy, is reported. No characteristic Yb3+ emission is found, but a pronounced narrowing of the bound‐exciton spectrum is observed for Yb concentrations in the Ga melt below 100 ppm. A similar effect is seen in conduction band to acceptor transitions, for which the smallest linewidth observed is limited by fluctuations in composition and agrees well with the currently accepted 66:34 band‐offset partition between the conduction and valence bands of GaAs/Ga1−xAlxAs heterojunctions in the direct band‐gap range.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors

Ion pairing effects on substitutional impurity diffusion in silicon

N. E. B. Cowern

Appl. Phys. Lett. 54, 703 (1989); http://dx.doi.org/10.1063/1.100868 (3 pages) | Cited 13 times

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Recent experiments have shown that ion pairing has a major influence on the diffusion and precipitation of oppositely charged impurities in silicon. Published data are used to obtain ion pairing coefficients Ω for n‐type impurities with B and In. A single value, Ω=0.17/ni, suffices to describe the cases P‐B, As‐B, and Sb‐B. For P‐In and Sb‐In, Ω is roughly an order of magnitude smaller. These observations are consistent with the picture that paired ions occupy adjacent substitutional sites, with a small perturbation in their Coulomb binding arising from elastic effects.
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66.30.J- Diffusion of impurities

Solid phase recrystallization in molecular beam deposited gallium arsenide

T. Kanata, H. Takakura, and Y. Hamakawa

Appl. Phys. Lett. 54, 706 (1989); http://dx.doi.org/10.1063/1.100869 (3 pages) | Cited 1 time

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A series of experimental investigations on the solid phase recrystallization of molecular beam deposited gallium arsenide films on silicon dioxide/tantalum/nickel substrates has been performed. The activation energy for recrystallization is unexpectedly small (0.55 eV) in the temperature range 450–600 °C. When a thin amorphous germanium layer was grown before gallium arsenide deposition, an enhanced grain growth of gallium arsenide occurs together with anomalous germanium diffusion into the gallium arsenide layer in a semieutectic phase reaction. An enhancement of grain growth has also been observed by the utilization of a graphoepitaxy substrate having inverted pyramidal relief.
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68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.10.Jt Growth from solid phases (including multiphase diffusion and recrystallization)

Heteroepitaxial growth of InN by microwave‐excited metalorganic vapor phase epitaxy

Akihiro Wakahara and Akira Yoshida

Appl. Phys. Lett. 54, 709 (1989); http://dx.doi.org/10.1063/1.100870 (3 pages) | Cited 28 times

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Epitaxial layers of InN films were grown onto (0001) α‐Al2O3 substrates in the temperature range of 400–600 °C by microwave‐excited metalorganic vapor phase epitaxy using (CH3)3In and N2. Specular surface was obtained at a low substrate temperature (<500 °C) with a relatively high microwave power (>100 W). From reflection high‐energy electron diffraction analysis, the deposited films were found to be crystalline InN with an orientation relation of (0001) InN//(0001) α‐Al2O3. The stoichiometry of the grown films was found to be similar to that reported for bulk InN from electron spectroscopy for chemical analysis.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
68.55.Nq Composition and phase identification
68.55.-a Thin film structure and morphology
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Intracenter transitions in triply ionized erbium ions diffused into III‐V compound semiconductors

Xinwei Zhao, Kazuhiko Hirakawa, and Toshiaki Ikoma

Appl. Phys. Lett. 54, 712 (1989); http://dx.doi.org/10.1063/1.100871 (3 pages) | Cited 18 times

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The rare‐earth element, erbium (Er), was successfully diffused into GaAs and InP for the first time. Two intense and three weak sharp photoluminescence (PL) lines related with Er were observed at a wavelength of ∼1.55 μm both in GaAs and InP. It was found, for the first time, that the emission energy and the linewidth of the two intense Er‐related PL lines do not depend on temperatures up to 220 K. This clearly indicates that these sharp emission lines are due to 4f‐intracenter transitions in triply ionized erbium (Er3+) ions, and that the 4f orbitals are well shielded from a crystal field by the outer closed orbitals. Furthermore, it was found that the intensity ratio of the five emission lines from Er3+ is independent of the excitation power density. The results reveal that the Er3+ ion substitutes a cation site both in GaAs and InP, and that the five PL lines correspond to the transitions from the first excited state to the five crystal‐field‐split ground states of Er3+ ion with a tetrahedral (Td) symmetry.
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61.72.U- Doping and impurity implantation
66.30.J- Diffusion of impurities
78.55.Cr III-V semiconductors
71.55.Eq III-V semiconductors

Effect of SiO2 surface chemistry on the oxidation of silicon

J. M. deLarios, D. B. Kao, C. R. Helms, and B. E. Deal

Appl. Phys. Lett. 54, 715 (1989); http://dx.doi.org/10.1063/1.101469 (3 pages) | Cited 14 times

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We show that the retardation in the silicon oxidation rate associated with an ammonium hydroxide‐hydrogen peroxide preclean is due to trace amounts of aluminum in the region of the SiO2 surface. This aluminum and the retarding effect can be eliminated by removing less than 50 Å of thermal oxide in a HF:H2O etch. Depositing thin films of aluminum with thicknesses between 0.05 and 1 monolayers (ML) on HF cleaned surfaces produced the same retardation as the NH4OH based cleans. These results indicate the importance of the SiO2 surface in silicon oxidation.
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81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Elucidation of x‐ray diffraction data on the nature of the ordering of GaInP2 and how the ordering relates to changes in the optical properties

Sarah R. Kurtz, J. M. Olson, and A. Kibbler

Appl. Phys. Lett. 54, 718 (1989); http://dx.doi.org/10.1063/1.101470 (3 pages) | Cited 15 times

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The relationship between anomalous changes in the band gap and ordering of the group III sublattice of GaInP2 is discussed. X‐ray diffraction data are reported for the first time which show significant long‐range order of the CuPt type, i.e., alternating {111} Ga and In planes, in agreement with published electron diffraction data. However, the x‐ray and electron diffraction data differ as to which of the four possible orientations are observed and as to the directions of the streaks. No correlation was observed between the long‐range order parameter and the band‐gap anomalies.
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68.55.-a Thin film structure and morphology
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.20.At Surface states, band structure, electron density of states

Planar Ge/Pd and alloyed Au‐Ge‐Ni ohmic contacts to n‐AlxGa1−xAs (0≤x≤0.3)

E. D. Marshall, L. S. Yu, S. S. Lau, T. F. Kuech, and K. L. Kavanagh

Appl. Phys. Lett. 54, 721 (1989); http://dx.doi.org/10.1063/1.100872 (3 pages) | Cited 14 times

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Specific contact resistivity ρc of planar Ge/Pd ohmic contacts to n‐type AlxGa1−xAs is measured as a function of AlAs mole fraction x and anneal temperature Tann. The functional dependence of ρc on Tann is the same for all x, decreasing to a minimum at 275–325 °C. This indicates that the ohmic contact formation mechanism is independent of x(0≤x≤0.3) as verified by MeV Rutherford backscattering spectrometry and Read camera glancing angle x‐ray diffraction. Decomposition of an epitaxial Pd‐AlxGa1−xAs phase is correlated with the onset of ohmic behavior and may result in a thin solid phase regrown interfacial AlxGa1−xAs layer. An undoped 20 nm GaAs cap layer reduces ρc by about one order of magnitude. Ge/Pd contacts display greater dependence of ρc on x and much smoother surface morphology compared with those of standard Au‐Ge‐Ni contacts on AlxGa1−xAs (0≤x≤0.3).
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73.40.Cg Contact resistance, contact potential
73.40.Ns Metal-nonmetal contacts

Surface passivation of GaAs

H. H. Lee, R. J. Racicot, and S. H. Lee

Appl. Phys. Lett. 54, 724 (1989); http://dx.doi.org/10.1063/1.100873 (3 pages) | Cited 38 times

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We have successfully passivated the surface of n‐type (100) GaAs on the basis of P2S5/NH4OH treatment of the surface. A fivefold increase in the photoluminescence (PL) intensity results at room temperature when the surface is passivated and the PL intensity remains the same even after ten days’ exposure to room air. Current‐voltage characteristic also corroborates the PL measurements and shows that the GaAs surface retains its integrity when passivated with P2S5 and its electronic characteristic remains invariant with time even after exposure to air for one month. The results are indications of the robust stability of the passivated GaAs surface.
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81.65.-b Surface treatments
81.40.Tv Optical and dielectric properties related to treatment conditions
78.55.Cr III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Study of the DX center fine structure in ion‐implanted Al0.27Ga0.73As processed by rapid thermal annealing

A. C. Campbell, A. Dodabalapur, G. E. Crook, and B. G. Streetman

Appl. Phys. Lett. 54, 727 (1989); http://dx.doi.org/10.1063/1.100874 (3 pages) | Cited 3 times

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Ion implantation is used to modify the local environment of the DX center in Si‐doped Al0.27Ga0.73As grown by molecular beam epitaxy (MBE), and the variations in DX center properties with subsequent rapid thermal annealing processes are examined using deep level transient spectroscopy. In the as‐grown sample, two DX center peaks are found with the same activation energy of 0.46±0.01 eV, but with widely different cross sections. The main DX center peak ME3, which appears at higher temperatures due to its smaller cross section, remains stable throughout the experiments. The second DX center peak ME2 has a much larger cross section, and appears at a lower temperature. The capture properties of this subsidiary DX center peak are markedly altered in the ion‐implanted samples. Samples which were subject solely to the rapid thermal annealing processes have stable DX center trap signatures, indicating that arsenic loss during annealing does not significantly influence the DX center characteristics. It is proposed that regions of incomplete ordering and defect complexing in the AlGaAs film give rise to the various subsidiary DX center peaks observed.
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71.55.Eq III-V semiconductors
61.72.Bb Theories and models of crystal defects
61.72.U- Doping and impurity implantation

High efficiency single quantum well graded‐index separate‐confinement heterostructure lasers fabricated with MeV oxygen ion implantation

Fulin Xiong, T. A. Tombrello, H. Wang, T. R. Chen, H. Z. Chen, H. Morkoç, and A. Yariv

Appl. Phys. Lett. 54, 730 (1989); http://dx.doi.org/10.1063/1.100875 (3 pages) | Cited 24 times

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Single quantum well AlGaAs/GaAs graded‐index separate‐confinement heterostructure lasers have been fabricated using MeV oxygen ion implantation plus optimized subsequent thermal annealing. A high differential quantum efficiency of 85% has been obtained in a 360‐μm‐long and 10‐μm‐wide stripe geometry device. The results have also demonstrated that excellent electrical isolation (breakdown voltage of over 30 V) and low threshold currents (22 mA) can be obtained with MeV oxygen ion isolation. It is suggested that oxygen ion implantation induced selective carrier compensation and compositional disordering in the quantum well region as well as radiation‐induced lattice disordering in AlxGa1−xAs/GaAs may be mostly responsible for the buried layer modification in this fabrication process.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Spatial charge distribution in the plasma‐enhanced chemical vapor deposited nitrogen‐rich silicon nitride

J. Kanicki and S. Hug

Appl. Phys. Lett. 54, 733 (1989); http://dx.doi.org/10.1063/1.100876 (3 pages) | Cited 5 times

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Gate quality N‐rich silicon nitride films, with low bulk dangling bond densities, have been prepared by plasma‐enhanced chemical vapor deposition at a substrate temperature of 400 °C. Films of different thicknesses, ranging from 200 to 10 500 Å, were obtained by varying the deposition time. The dielectric constant was found to be around 6.6 for this material, independent of the film thickness. The flatband voltage shift was also found to be proportional to the silicon nitride thickness, which suggests that a centroid of the trapped charge is located close to (within a region narrower than 200 Å) the silicon/nitride interface. For films thicker than 200 Å, the effective charge and effective trapped carrier density were found to be Qeff≂2×10−7 C cm−2 and Neff≂1×1012 cm−2.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
73.61.Ng Insulators
77.22.Ch Permittivity (dielectric function)

Laser‐induced metal deposition on semiconductors from liquid electrolytes

L. Nánai, I. Hevesi, F. V. Bunkin, B. S. Luk’yanchuk, M. R. Brook, G. A. Shafeev, Daniel A. Jelski, Z. C. Wu, and Thomas F. George

Appl. Phys. Lett. 54, 736 (1989); http://dx.doi.org/10.1063/1.100877 (3 pages) | Cited 16 times

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Maskless deposition of gold and copper from electrolyte solutions onto n‐doped semiconductors (GaAs, Si) is investigated. The metal deposits are found to have lateral dimensions of about 1 μm and are in barrier contact with the semiconductor. The proposed deposition mechanism is governed by the electric fields resulting from the Dember effect, the p‐n junction, and the thermal emf.
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81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy

Admittance spectroscopy measurement of band offsets in strained layers of InxGa1−xAs grown on InP

R. E. Cavicchi, D. V. Lang, D. Gershoni, A. M. Sergent, J. M. Vandenberg, S. N. G. Chu, and M. B. Panish

Appl. Phys. Lett. 54, 739 (1989); http://dx.doi.org/10.1063/1.100878 (3 pages) | Cited 47 times

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We report measurements of the conduction‐band offset in strained‐layer superlattices of InxGa1−xAs/InP. Admittance spectroscopy was used to measure the activation energy for thermionic emission of electrons over InP barriers in n‐type superlattices. Superlattice dimensions and x values were obtained from high‐resolution x‐ray diffraction and transmission electron microscopy studies. For x=0.37, 0.53, and 0.69, the values obtained for the conduction‐band offset are 175±25 meV, 210±20 meV, and 315±25 meV, respectively.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
79.40.+z Thermionic emission
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.80.Ey III-V and II-VI semiconductors

GaAs photoconductive closing switches with high dark resistance and microsecond conductivity decay

M. S. Mazzola, K. H. Schoenbach, V. K. Lakdawala, R. Germer, G. M. Loubriel, and F. J. Zutavern

Appl. Phys. Lett. 54, 742 (1989); http://dx.doi.org/10.1063/1.100879 (3 pages) | Cited 8 times

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Silicon‐doped n‐type gallium arsenide crystals, compensated with diffused copper, were studied with respect to their application as photoconductive, high‐power closing switches. The attractive features of GaAs:Cu switches are their high dark resistivity, their efficient activation with Nd:YAG laser radiation, and their microsecond conductivity decay time constant. In our experiment, electric fields as high as 19 kV/cm were switched, and current densities of up to 10 kA/cm2 were conducted through a closely compensated crystal. At field strengths greater than approximately 10 kV/cm, a voltage ‘‘lock‐on’’ effect was observed.
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85.60.-q Optoelectronic devices
72.40.+w Photoconduction and photovoltaic effects
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
84.32.Dd Connectors, relays, and switches

Room‐temperature confinement and photoluminescence near 3 μm from HgCdTe multiple quantum wells

C. L. Cesar, M. N. Islam, R. D. Feldman, R. Spitzer, R. F. Austin, A. E. DiGiovanni, J. Shah, and J. Orenstein

Appl. Phys. Lett. 54, 745 (1989); http://dx.doi.org/10.1063/1.100880 (3 pages) | Cited 23 times

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We report room‐temperature confinement and photoluminescence near 3 μm in a mercury cadmium telluride multiple quantum well. The absorption spectra show transitions from the first heavy and light hole confined levels to the first conduction electron confined level. Photoluminescence is present even at room temperature. The transition energies and temperature dependence of our data can be described by a square well model provided that a temperature‐independent value of approximately 400 meV is used for the HgTe‐CdTe valence‐band offset.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Et II-VI semiconductors

High‐speed absorption recovery in quantum well diodes by diffusive electrical conduction

G. Livescu, D. A. B. Miller, T. Sizer, D. J. Burrows, J. E. Cunningham, A. C. Gossard, and J. H. English

Appl. Phys. Lett. 54, 748 (1989); http://dx.doi.org/10.1063/1.100881 (3 pages) | Cited 30 times

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We present here picosecond time‐resolved electroabsorption measurements in GaAs quantum well p‐i‐n diode structures. While the dynamics of the vertical transport is not completely understood at present, our data reveal the importance of the ‘‘lateral’’ propagation of the photoexcited voltage pulse over the area of the doped regions. We propose a two‐dimensional ‘‘diffusive conduction’’ mechanism, which predicts a fast relaxation of the electrical pulse, with time constants ranging from 50 fs to 500 ps, determined by the size of the exciting spot, the resistivity of the doped regions, and the capacitance of the intrinsic region.
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85.60.Dw Photodiodes; phototransistors; photoresistors
73.50.Pz Photoconduction and photovoltaic effects
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.47.-p Spectroscopy of solid state dynamics

Dopant redistribution during oxidation of SiGe

F. K. LeGoues, R. Rosenberg, and B. S. Meyerson

Appl. Phys. Lett. 54, 751 (1989); http://dx.doi.org/10.1063/1.100882 (3 pages) | Cited 12 times

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This letter compares diffusion of boron in Si during oxidation both for pure Si and for Si covered with a very thin layer of SiGe alloy. It demonstrates that the thin layer of SiGe suppresses oxidation enhanced diffusion of boron. A mechanism is proposed based on suppression of Si interstitials. This phenomenon is then related to the faster rate of oxidation of bulk SiGe and SiGe‐covered Si samples reported previously.
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81.65.-b Surface treatments
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
66.30.J- Diffusion of impurities
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