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27 Feb 1989

Volume 54, Issue 9, pp. 783-864

Page 1 of 2 Pages Next Page | Jump to Page

Linear and nonlinear optical properties of flux‐grown KTiOAsO4

John D. Bierlein, Herman Vanherzeele, and A. A. Ballman

Appl. Phys. Lett. 54, 783 (1989); http://dx.doi.org/10.1063/1.101552 (3 pages) | Cited 51 times

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Show Abstract
Single crystals of KTiOAsO4, a material which is isostructural with the well‐known nonlinear optical material KTiOPO4 (KTP), were grown by a flux process and its optical and dielectric properties characterized. Compared to KTP, KTiOAsO4 has a higher figure of merit for second‐harmonic generation, larger electro‐optic coefficients, and lower ionic conductivity. As a result, KTiOAsO4 should become a viable alternative for KTP.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
78.20.Jq Electro-optical effects
77.22.Ch Permittivity (dielectric function)
66.30.H- Self-diffusion and ionic conduction in nonmetals

Characterization of the focused output from a selenium soft x‐ray laser

D. G. Nilson, S. B. Brown, C. J. Keane, B. J. MacGowan, D. L. Matthews, J. E. Trebes, O. R. Wood, W. T. Silfvast, D. Y. Al‐Salameh, T. E. Harvey, and P. J. Maloney

Appl. Phys. Lett. 54, 786 (1989); http://dx.doi.org/10.1063/1.101359 (3 pages) | Cited 3 times

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The output energy (90 μJ), focal spot diameter (235 μm), and pointing accuracy (±75 μrad) for a 3.7‐cm‐long Se soft x‐ray laser operating at 20.6 and 20.9 nm are reported. Now that this intense soft x‐ray source has been well characterized it may find use in such diverse applications as lithography, contact microscopy, holography, and photoionization pumping.
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42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Lt Gas lasers including excimer and metal-vapor lasers
42.60.By Design of specific laser systems

Diode laser pumped blue‐light source based on intracavity sum frequency generation

W. P. Risk and W. Lenth

Appl. Phys. Lett. 54, 789 (1989); http://dx.doi.org/10.1063/1.100847 (3 pages) | Cited 18 times

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Sum frequency mixing in KTiOPO4 of the 809 nm light from a GaAlAs laser diode and the 1064 nm light from a diode‐pumped Nd:YAG laser has been used to generate blue radiation at 459 nm. The specific problems associated with the use of high‐power multimode GaAlAs diode lasers as the source of the 809 nm mixing radiation were investigated in detail. Rapid modulation of the blue output and generation of 5 ns pulses by direct modulation of the GaAlAs laser diode were demonstrated.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Rz Doped-insulator lasers and other solid state lasers
42.55.Px Semiconductor lasers; laser diodes
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation

Optogalvanic signals from argon metastables in a rf glow discharge

D. E. Murnick, R. B. Robinson, D. Stoneback, M. J. Colgan, and F. A. Moscatelli

Appl. Phys. Lett. 54, 792 (1989); http://dx.doi.org/10.1063/1.100848 (3 pages) | Cited 7 times

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Laser optogalvanic (LOG) signals at 667.7, 751.5, and 696.5 nm from the 3 P1 and 3 P2 levels of Ar were studied at a pressure of 250 mTorr in a rf glow discharge. Signals with unexpected signs and time dependences were found. The results are interpreted as being due to radiative trapping effects and collisional mixing between resonance and metastable levels. An average electron energy of 2.1 eV is derived from modeling the data.
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52.20.Fs Electron collisions
34.50.Fa Electronic excitation and ionization of atoms (including beam-foil excitation and ionization)
52.80.Hc Glow; corona
52.70.Kz Optical (ultraviolet, visible, infrared) measurements

Grain boundary amorphization reaction in thin films of elemental Cu and Y

R. W. Johnson, C. C. Ahn, and E. R. Ratner

Appl. Phys. Lett. 54, 795 (1989); http://dx.doi.org/10.1063/1.100849 (3 pages) | Cited 4 times

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Compositionally modulated thin films of Cu and Y were prepared in an ultrahigh vacuum dc ion beam deposition chamber. Room‐temperature growth of an amorphous Cu‐Y phase was observed with interdiffusion of the elemental Cu and Y. Transmission electron microscopy of as‐prepared samples revealed a novel growth morphology; amorphous phase formation was observed both at the original Cu/Y interface and between the grains of the elemental Y. Estimates for the thermodynamic and kinetic factors underlying the grain boundary amorphization reaction are presented.
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81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.55.Nq Composition and phase identification
68.35.Fx Diffusion; interface formation
66.30.Ny Chemical interdiffusion; diffusion barriers

New mechanism for diffusion of ion‐implanted boron in Si at high concentration

O. W. Holland

Appl. Phys. Lett. 54, 798 (1989); http://dx.doi.org/10.1063/1.100850 (3 pages) | Cited 4 times

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Modeling of the diffusion of high‐concentration implanted B in Si is done. The normally accepted model, which assumes that diffusivity of boron is controlled by the singly charged donor vacancy, is shown to be inadequate in describing the boron profiles. Rather, a two‐stream model, in which boron movement is dominated by a dissociative process involving both interstitial and substitutional diffusion, is found to be in good agreement with the data.
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66.30.J- Diffusion of impurities
61.72.uf Ge and Si
66.30.Dn Theory of diffusion and ionic conduction in solids
61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients

Lateral forces and topography using scanning tunneling microscopy with optical sensing of the tip position

Marc A. Taubenblatt

Appl. Phys. Lett. 54, 801 (1989); http://dx.doi.org/10.1063/1.100851 (3 pages) | Cited 7 times

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A technique is described for measurement of lateral forces on a scanning tunneling microscopy (STM) tip simultaneously with surface topography, using optical sensing of the STM tip vibration. The STM tip is caused to vibrate near a resonant mode in the lateral direction, using the capacitive forces between the tip and the surface under study. Topography is monitored using the z‐displacement feedback voltage, in a low‐frequency loop, while optical sensing of the high‐frequency tip vibration amplitude monitors lateral forces acting on the tip.
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68.35.B- Structure of clean surfaces (and surface reconstruction)
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
42.79.-e Optical elements, devices, and systems

Folded acoustic phonons in InAs‐AlAs strained‐layer superlattices

M. Recio, G. Armelles, A. Ruiz, A. Mazuelas, and F. Briones

Appl. Phys. Lett. 54, 804 (1989); http://dx.doi.org/10.1063/1.100852 (3 pages) | Cited 4 times

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Raman spectroscopy is used to characterize highly mismatched (7%) InAs‐AlAs superlattices grown by atomic layer molecular beam epitaxy. In particular, folded acoustic modes are presented and compared with two different theoretical models (Rytov and linear chain). We find good agreement between theory and experiments. We estimate, with a simple model, the magnitude of the effect of the strain on the phonon frequency shifts.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.30.Fs III-V and II-VI semiconductors

Characteristics of electron spin resonance in hydrogenated amorphous silicon‐carbon/hydrogenated amorphous silicon heterojunctions

Guanghua Chen, Guosheng Sun, and Fangqing Zhang

Appl. Phys. Lett. 54, 807 (1989); http://dx.doi.org/10.1063/1.100853 (3 pages) | Cited 1 time

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The characteristics of light soaking and equilibrium electron spin resonance (ESR) in p‐hydrogenated amorphous silicon‐carbon/i‐hydrogenated amorphous silicon heterojunction are investigated. The influence of the carbon content in the p layer on ESR is also studied in this letter. We find that the light‐induced silicon dangling bond defects mainly originate from the i layer and the increased spin density can be decayed by annealing at a low temperature (160 °C). Possible microscopic mechanisms of the light‐induced defects observed in the p/i heterojunction are discussed as well.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
76.30.-v Electron paramagnetic resonance and relaxation
68.35.Dv Composition, segregation; defects and impurities
81.15.Jj Ion and electron beam-assisted deposition; ion plating

Optically enhanced photoconductivity in semi‐insulating gallium arsenide

U. V. Desnica and B. Šantić

Appl. Phys. Lett. 54, 810 (1989); http://dx.doi.org/10.1063/1.100854 (3 pages) | Cited 23 times

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Time evolution of photoconductivity of semi‐insulated gallium arsenide illuminated at low temperatures with monochromatic 0.7–1.8 eV photons was studied. For low light intensity the photosensitivity increases with time by several orders of magnitude and exhibits different dynamics for above‐the‐gap and below‐the‐gap energy photons. For various photosensitivity stages the concentration of charge trapped in deep traps was determined by measuring thermally stimulated current. Six deep traps in the 85–250 K temperature range were observed. Good correlation between the photosensitivity and the total concentration of trapped charge was found. The increase of photosensitivity is interpreted as the increase of lifetime of optically created free holes due to the trapping of electrons, which therefore are not available for recombination. The same interpretation also gives a new insight in previously published results on increased photosensitivity in gallium arsenide.
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72.40.+w Photoconduction and photovoltaic effects
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

High‐field transport in GaAs transistors

K. Berthold, A. F. J. Levi, J. Walker, and R. J. Malik

Appl. Phys. Lett. 54, 813 (1989); http://dx.doi.org/10.1063/1.100855 (3 pages) | Cited 13 times

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Resonant tunneling is used to explore the dynamics of electron transport in the electric field of reverse‐biased GaAs n‐p‐n heterojunction bipolar transistor collectors. Extreme velocity overshoot is observed in a fraction of a percent of electrons which are accelerated ballistically in the Γ valley to energies greater than 1.5 eV. In addition, we show that Γ–X valley transfer is the dominant scattering mechanism for high‐energy Γ valley electrons.
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85.30.Pq Bipolar transistors
85.30.De Semiconductor-device characterization, design, and modeling
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Thermal annealing and zinc doping effects on the lattice constant of organometallic vapor phase grown GaAs epilayers on heavily In‐doped substrates

Tetsuji Imai, Shunro Fuke, Katsumi Mori, and Kazuhiro Kuwahara

Appl. Phys. Lett. 54, 816 (1989); http://dx.doi.org/10.1063/1.100856 (3 pages) | Cited 2 times

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Undoped and Zn‐doped (∼3×1020/cm3) GaAs epilayers are grown on In‐doped (order of 1020/cm3) GaAs substrates by the organometallic vapor phase epitaxy method. By thermal annealing of the undoped epilayer, changes in the perpendicular lattice constant a⊥, together with the apparent changes in surface morphology such as the appearance of a cross‐hatched structure or a narrowing of the cross‐hatched line spacing, are observed. It is also found that Zn doping is very effective to obtain thick, coherently grown epilayers on In‐doped GaAs substrates. No appreciable changes in a⊥ and no generation of misfit dislocations are found because of the hardening of the crystalline lattice, similar to the case of In doping to GaAs bulk crystals.
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61.72.Bb Theories and models of crystal defects
68.55.-a Thin film structure and morphology
61.66.Fn Inorganic compounds

Properties of Si layers grown by molecular beam epitaxy at very low temperatures

H. Jorke, H. Kibbel, F. Schäffler, A. Casel, H.‐J. Herzog, and E. Kasper

Appl. Phys. Lett. 54, 819 (1989); http://dx.doi.org/10.1063/1.100857 (3 pages) | Cited 27 times

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(100) silicon molecular beam epitaxy films with etch pit densities below 103 cm−2 and χmin values of 3.3–3.9% were grown at very low temperatures (Ts =250–350 °C). Although dopant activation is significantly below unity at n=1018 Sb atoms/cm3 Hall mobilities of homogeneously Sb‐doped samples (Ts =250 °C, 300 °C) are found to match reasonably bulk values. δ doping at a monolayer Sb deposition shows a dopant activation of 0.45–0.81 with no detectable broadening at Ts =200 °C.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors

Study of the SiO2/Si interface endurance property during rapid thermal nitridation and reoxidation processing

D. K. Shih, D. L. Kwong, and S. Lee

Appl. Phys. Lett. 54, 822 (1989); http://dx.doi.org/10.1063/1.101556 (3 pages) | Cited 13 times

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The effects of rapid thermal nitridation of oxides (RTN) and rapid thermal reoxidation of rapid thermal nitride oxides (RTO/RTN) on the SiO2/Si interface endurance property have been studied. It is found that in order to enhance the SixNyOz/Si interface ‘‘hardness’’ [i.e., less interface states (Dit) are generated during high electric field stress], an interfacial oxidation process during RTN or RTO/RTN must occur. This oxidation reaction not only removes the nitridation‐induced damages but also grows an interfacial strainless oxide. The existence of small amounts of nitrogen at the interface is responsible for the strainless oxide growth, and hence the improvement of SixNyOz/Si interface strength. A physical model based on these observations is described, which considers the generation of silicon and oxygen dangling bonds at the SixNyOz/Si interface during rapid thermal processing.
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81.05.Kf Glasses (including metallic glasses)
81.65.-b Surface treatments
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces
73.20.At Surface states, band structure, electron density of states
68.35.-p Solid surfaces and solid-solid interfaces: structure and energetics

Resistance measurements on point‐contact diodes

H. D. Riccius and L. H. Jones

Appl. Phys. Lett. 54, 825 (1989); http://dx.doi.org/10.1063/1.100858 (3 pages)

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Experiments have shown that the conductance of any point‐contact diode consisting of a metal whisker in mechanical contact with either a metal, semimetal, or semiconductor is an integral multiple of 4.3×10−6 Ω−1, and depends only on the contact force applied.
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85.30.Hi Surface barrier, boundary, and point contact devices
73.25.+i Surface conductivity and carrier phenomena
73.40.Cg Contact resistance, contact potential

Growth of (111) CdTe on tilted (001) GaAs

J. Cibert, Y. Gobil, K. Saminadayar, S. Tatarenko, A. Chami, G. Feuillet, Le Si Dang, and E. Ligeon

Appl. Phys. Lett. 54, 828 (1989); http://dx.doi.org/10.1063/1.100859 (3 pages) | Cited 27 times

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Twin‐free growth of (111) CdTe on (001) GaAs is reported for substrates tilted around the [110] axis, i.e., exposing Ga dangling bonds at the terrace edges. Layers grown on nominally (001) substrates and tilted substrates are characterized by double crystal x‐ray diffraction, low‐temperature reflectivity and photoluminescence, channeling, and high‐resolution transmission electron microscopy.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.-a Thin film structure and morphology

Redistribution of deep levels in semi‐insulating GaAs wafer by rapid thermal processing

Akira Usami, Akio Kitagawa, and Takao Wada

Appl. Phys. Lett. 54, 831 (1989); http://dx.doi.org/10.1063/1.100860 (3 pages) | Cited 5 times

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The distributions of deep levels in semi‐insulating GaAs before and after rapid thermal processing (RTP) at 800 °C are obtained by the contactless measurement of the optically injected excess carrier signal height by reflectance microwave prober method. The deep levels in the liquid‐encapsulated Czochralski‐grown 2 in. GaAs wafer are redistributed by RTP, and its spatial variation shows a W‐shaped pattern along the 〈100〉 radial direction. Furthermore, the distribution of deep levels in the RTP wafer corresponds to the crystallographic slip generation pattern, which is relief of the thermal stress during RTP, examined by x‐ray topography. The redistribution of the deep levels is due to the production of the principal deep level EL2 by RTP.
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71.55.Eq III-V semiconductors
61.72.Bb Theories and models of crystal defects

Scaling size distribution of oxide defects, trema‐fractal oxide layer, and breakdown statistics of metal‐oxide‐semiconductor devices

R. D. S. Yadava

Appl. Phys. Lett. 54, 834 (1989); http://dx.doi.org/10.1063/1.101414 (3 pages)

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The extreme value distribution, characteristic of the defect‐related dielectric breakdown in thin SiO2 films, is derived by assuming that (i) the defects are Poisson distributed in space with their mean densities scaling with their sizes as D(a)∼a−γ, where D(a) is the total density of defects having sizes more than a and γ is a constant, and (ii) the dielectric strengths of weak spots associated with the defects are logarithmically related to their sizes as E∝−ln a. It is argued that γ<1. This implies that the defect‐free region of the oxide film is a non‐self‐similar random fractal with fractal dimension df =2 and topological dimension dt =1.
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77.22.Jp Dielectric breakdown and space-charge effects
77.55.-g Dielectric thin films
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Influence of temperature on electron transport in bipolar devices

Witold Bardyszewski and David Yevick

Appl. Phys. Lett. 54, 837 (1989); http://dx.doi.org/10.1063/1.100861 (3 pages) | Cited 11 times

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We evaluate the inelastic electron lifetime in the p regions of III‐V semiconductor devices with the aid of the exact temperature‐dependent random phase approximation valence‐band dielectric function. Our results demonstrate that at room temperature the low‐energy electron lifetime decreases markedly while hot‐electron lifetimes are reduced by several tens of percent. We subsequently repeat our calculations with the damped plasmon pole approximation for the dielectric function, obtaining acceptable values with a minimum of computational effort.
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85.30.Pq Bipolar transistors
85.30.De Semiconductor-device characterization, design, and modeling
72.10.Di Scattering by phonons, magnons, and other nonlocalized excitations
72.20.Dp General theory, scattering mechanisms

Use of superlattices to realize inverted GaAs/AlGaAs heterojunctions with low‐temperature mobility of 2×106 cm2/V s

T. Sajoto, M. Santos, J. J. Heremans, M. Shayegan, M. Heiblum, M. V. Weckwerth, and U. Meirav

Appl. Phys. Lett. 54, 840 (1989); http://dx.doi.org/10.1063/1.100862 (3 pages) | Cited 24 times

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Reproducible realization of high quality inverted interfaces (GaAs on AlGaAs) grown by molecular beam epitaxy is reported. Effective use of thin‐layer GaAs/AlAs superlattices in place of an AlGaAs barrier was made to reduce the number of impurities and the roughness at these interfaces. The low‐temperature (≂4 K) mobility for electrons at these interfaces is as high as 2×106 cm2/V s for an electron density of ≂5×1011 cm−2—a factor of four improvement over the highest mobility reported for inverted interfaces.
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68.35.Fx Diffusion; interface formation
68.35.Dv Composition, segregation; defects and impurities
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Experimental evidence of both interstitial‐ and vacancy‐assisted diffusion of Ge in Si

P. Fahey, S. S. Iyer, and G. J. Scilla

Appl. Phys. Lett. 54, 843 (1989); http://dx.doi.org/10.1063/1.100863 (3 pages) | Cited 54 times

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We present the first experimental identification of the diffusion mechanisms of Ge in Si. Using thermal nitridation reactions to create either excess self‐interstitials or vacancies, it is established that under equilibrium conditions at 1050 °C Ge diffusion takes place by both substitutional‐interstitial interchange and vacancy mechanisms, with comparable contributions from each. If previous conjectures that Ge diffusion in Si is similar to Si self‐diffusion are correct, our findings support the idea that Si self‐diffusion takes place by both interstitial and vacancy mechanisms.
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66.30.Lw Diffusion of other defects
66.30.J- Diffusion of impurities
66.30.Dn Theory of diffusion and ionic conduction in solids

Confined phonons in (GaAs)n1(AlAs)n2 superlattices grown along the [012] direction

Z. V. Popović, M. Cardona, L. Tapfer, K. Ploog, E. Richter, and D. Strauch

Appl. Phys. Lett. 54, 846 (1989); http://dx.doi.org/10.1063/1.101415 (3 pages) | Cited 6 times

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The short‐period (GaAs)n1(AlAs)n2 superlattices with parameters (n1,n2)=(21,25), (6,42), (14,16), and (23,8) have been grown by molecular beam epitaxy on GaAs substrates along the [012] direction and characterized by x‐ray and Raman scattering spectroscopy. The appearance of distinct satellite peaks around the Bragg reflections demonstrates the formation of high quality superlattices. The observed TO and LO confined modes have frequencies which map closely those of the optical phonons of bulk GaAs and AlAs in the Γ‐W‐X direction.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.30.Fs III-V and II-VI semiconductors
72.80.Ey III-V and II-VI semiconductors

Influence of dislocations on diffusion‐induced nonequilibrium point defects in III‐V compounds

B. P. R. Marioton, T. Y. Tan, and U. Gösele

Appl. Phys. Lett. 54, 849 (1989); http://dx.doi.org/10.1063/1.100846 (3 pages) | Cited 16 times

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Diffusion of elements migrating via a substitutional‐interstitial mechanism in III‐V compounds may induce nonequilibrium concentrations of native point defects. It has generally been assumed in the literature that, in the presence of dislocations, the point defects approach their thermal equilibrium concentrations. In contrast, it will be shown here that in III‐V compounds the most favorable concentration a perturbed mobile species in one sublattice can reach corresponds to that of establishing a local equilibrium relation with another mobile species in the other sublattice if long‐range transport of the defects to crystal surfaces is absent.
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61.72.sd Impurity concentration
61.72.sh Impurity distribution
61.72.sm Impurity gradients
66.30.J- Diffusion of impurities
61.72.jd Vacancies
61.72.jj Interstitials
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Molecular beam epitaxy growth of CoSi2 at room temperature

R. T. Tung and F. Schrey

Appl. Phys. Lett. 54, 852 (1989); http://dx.doi.org/10.1063/1.101416 (3 pages) | Cited 47 times

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Single‐crystal type B CoSi2 thin layers have been grown on Si(111) by codeposition at room temperature. The existence of a good quality CoSi2 template layer on the surface prior to the codeposition is essential. This requirement can be satisfied by either an annealed CoSi2 thin layer or by a small amount of cobalt deposited at room temperature. The topography of the original substrate surface has a predominant effect on the structure of line defects at the CoSi2 interface formed at room temperature. Results obtained from transmission electron microscopy and Rutherford backscattering are presented.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Intersubband absorption in strained InxGa1−xAs/Al0.4Ga0.6As (0≤x≤0.15) multiquantum wells

X. Zhou, P. K. Bhattacharya, G. Hugo, S. C. Hong, and E. Gulari

Appl. Phys. Lett. 54, 855 (1989); http://dx.doi.org/10.1063/1.100843 (2 pages) | Cited 24 times

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We report, for the first time, temperature‐dependent intersubband absorption data in doped pseudomorphic InxGa1−xAs/Al0.4Ga0.6As (0≤x≤0.15) multiquantum wells. In this composition range the absorption resonance varies in the range 6–7 μm for 50 Å wells, which agrees extremely well with theoretical calculations.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
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