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27 Feb 1989

Volume 54, Issue 9, pp. 783-864

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Growth of indium phosphide by metalorganic vapor phase epitaxy using dimethyl (3‐dimethylaminopropyl) indium as a new indium source

A. Molassioti, M. Moser, A. Stapor, F. Scholz, M. Hostalek, and L. Pohl

Appl. Phys. Lett. 54, 857 (1989); http://dx.doi.org/10.1063/1.100844 (2 pages) | Cited 15 times

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Dimethyl (3‐dimethylaminopropyl) indium was synthesized and used for the first time as an indium source for the growth of InP layers by metalorganic vapor phase epitaxy at atmospheric pressure. This compound is liquid at room temperature with a vapor pressure of 30–40 Pa at 30 °C, which enables its use at low source temperatures. The layers were grown at a bubbler temperature of 30 °C. The growth temperature was varied between 580 and 660 °C. Hall measurements revealed good electrical data with carrier mobilities up to 49 900 cm2 /V s at 77 K. Temperature‐dependent photoluminescence experiments confirmed these results and indicated that zinc was the main residual acceptor impurity.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
78.55.Cr III-V semiconductors
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths
73.61.Ey III-V semiconductors

Single target sputtering of superconducting YBa2Cu3O7−δ thin films on Si (100)

M. Migliuolo, A. K. Stamper, D. W. Greve, and T. E. Schlesinger

Appl. Phys. Lett. 54, 859 (1989); http://dx.doi.org/10.1063/1.101557 (3 pages) | Cited 23 times

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Thin films of YBa2Cu3O7−δ have been grown on (100) silicon substrates by single target rf diode sputtering. Yttria‐stabilized zirconia buffer layers were used to minimize substrate‐film reactions. Off‐stoichiometric targets were used to compensate for differences between film and target stoichiometries. The composition of the superconducting layer is also influenced by post‐deposition anneals, with films closer to the desired stoichiometry resulting from the higher temperature anneals. Film thicknesses spanned the 0.5–2.0 μm range and the onset and zero resistance ( ρ<10−7 Ω cm) temperatures were found to be 95 and 70 K, respectively, for 1.8‐μm‐thick films.
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81.15.Cd Deposition by sputtering
74.78.-w Superconducting films and low-dimensional structures
74.70.-b Superconducting materials other than cuprates
68.55.-a Thin film structure and morphology

Empirical photoablation rate model exemplified with the etching of polyphenylquinoxaline

Sylvain Lazare and Vincent Granier

Appl. Phys. Lett. 54, 862 (1989); http://dx.doi.org/10.1063/1.100845 (3 pages) | Cited 17 times

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A kinetic model of photoablation with the nanosecond pulses of an excimer laser, based on the so‐called moving interface, is presented. The rate of the ablating interface is assumed to be v=k(I−It) when the intensity I exceeds the threshold intensity It. The intensity reaching the interface I attenuated by the absorption of the products is I0e−βx, where x is the position of the interface. The ablation rate constant k of the polymer and screening coefficient β of the gas products are evaluated for each polymer and wavelength, by fitting the etch curves obtained precisely with our quartz crystal microbalance technique (as well as the literature data). The etching of polyphenylquinoxaline, a thermostable polymer, at three wavelengths (193, 248, and 351 nm) is given as an example.
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79.20.Ds Laser-beam impact phenomena
81.05.Lg Polymers and plastics; rubber; synthetic and natural fibers; organometallic and organic materials
81.65.-b Surface treatments
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