APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

4 Sep 1989

Volume 55, Issue 10, pp. 927-1046

Page 1 of 2 Pages Next Page | Jump to Page

Low‐crosstalk passive polarization splitters using Ti:LiNbO3 waveguide crossings

A. Neyer

Appl. Phys. Lett. 55, 927 (1989); http://dx.doi.org/10.1063/1.102452 (3 pages) | Cited 8 times

Full Text: | Download PDF

Show Abstract
In this letter the first demonstration of low‐crosstalk passive polarization splitters based on Ti: LiNbO3 single‐mode waveguide crossings is reported. Polarization crosstalk of less than −20 dB for both polarizations and total insertion loss figures of −2.5 dB (TE) and −3.0 dB (TM) at λ=1.3 μm have been achieved by optimizing the design and the fabrication of the intersection area. The devices operated nearly wavelength independent (±0.3 dB) over a range of 100 nm.
Show PACS
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
42.79.Bh Lenses, prisms and mirrors
42.79.Fm Reflectors, beam splitters, and deflectors
78.20.-e Optical properties of bulk materials and thin films

Absorptive electro‐optic spatial light modulators: Effect of well profile on device performance

G. D. Sanders and K. K. Bajaj

Appl. Phys. Lett. 55, 930 (1989); http://dx.doi.org/10.1063/1.101727 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
We report the effect of well profile on the performance of absorptive electro‐optic spatial light modulators based on multiquantum well structures. In particular we calculate the variation in exciton oscillator strength and the absorption coefficient at the signal wavelength as a function of applied electric field. For a monochromatic source at 1572 meV, for example, we consider modulators based on square, parabolic, and asymmetric triangular GaAs‐AlxGa1−xAs quantum wells and find that at zero field the exciton oscillator strengths are comparable but that superior performance is obtained using asymmetric triangular wells. These conclusions hold even assuming fairly large exciton linewidths in triangular wells.
Show PACS
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.79.Hp Optical processors, correlators, and modulators
71.35.-y Excitons and related phenomena
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Electron capture processes in optically excited In0.53Ga0.47As/InP quantum wells

U. Cebulla, G. Bacher, A. Forchel, D. Schmitz, H. Jürgensen, and M. Razeghi

Appl. Phys. Lett. 55, 933 (1989); http://dx.doi.org/10.1063/1.101728 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
We have performed picosecond time‐resolved measurements on In0.53Ga0.47As/InP quantum wells with varying barrier thicknesses using 10 ps Nd:YAG excitation. For this excitation, holes and electrons are created in the In0.53Ga0.47As layers. Due to momentum conservation the Nd:YAG excitation accelerates the electrons above the InP barrier where they can diffuse but cannot recombine. By examining the rise time of the quantum well emission, we can show that for samples with thick barriers, the barrier geometry largely controls the dynamic properties of the carriers after Nd:YAG excitation.
Show PACS
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.47.-p Spectroscopy of solid state dynamics

Ultrahigh efficiency microwave signal transmission using tandem‐contact single quantum well GaAlAs lasers

N. Moore and K. Y. Lau

Appl. Phys. Lett. 55, 936 (1989); http://dx.doi.org/10.1063/1.101729 (3 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
We show theoretically and experimentally that enhancements of up to 40 dB in the efficiency of optical transmission of microwave signals can be obtained by using a single quantum well laser transmitter whose contact is segmented into two sections, and modulation is applied to one of the sections. The improvement is dependent fundamentally on the relaxation oscillation frequency of the device, with the improvement factor dropping to around 15 dB at relaxation oscillation frequencies approaching 10 GHz.
Show PACS
42.79.Sz Optical communication systems, multiplexers, and demultiplexers
42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
41.20.Jb Electromagnetic wave propagation; radiowave propagation

Measurement of the fundamental modulation response of a semiconductor laser to millimeter wave frequencies by active‐layer photomixing

Michael A. Newkirk and Kerry J. Vahala

Appl. Phys. Lett. 55, 939 (1989); http://dx.doi.org/10.1063/1.101730 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
The room‐temperature modulation response of a GaAs/GaAlAs semiconductor laser (relaxation resonance frequency, νR=6.5 GHz) is measured to 37 GHz using the active‐layer photomixing technique. The measured response function agrees with the theoretical ideal, and there is no indication of device parasitic effects. An ultrahigh‐finesse Fabry–Perot interferometer is used to detect the optical modulation, which appears as sidebands in the laser field spectrum. With a moderately faster laser diode (i.e., νR∼10 GHz), the modulation response should be measurable beyond 100 GHz.
Show PACS
42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Stepwise‐graded‐index multilayer broadband low‐reflectivity coating for AlGaAs/GaAs power lasers

E. Marclay, D. J. Webb, P. Buchmann, and P. Vettiger

Appl. Phys. Lett. 55, 942 (1989); http://dx.doi.org/10.1063/1.102453 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
We describe a new type of optical low‐reflectivity coating and its application to GaAs/AlGaAs power lasers. The low‐reflectivity region of this coating extends over a broad wavelength range, therefore making the overall reflectivity much less sensitive to thickness variations as compared to single‐layer coatings. In addition, only two materials (SiO2 and a‐Si:H) are required, thus making it very easy to fabricate such coatings with standard deposition techniques such as plasma‐enhanced chemical vapor deposition (PECVD) or ion beam sputtering. Finally, the optical quality of coatings deposited by PECVD was confirmed by measurements on power lasers, showing optical power outputs in excess of 60 W/mm, among the highest reported value for coated mirrors.
Show PACS
42.79.Wc Optical coatings
42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
78.66.Sq Composite materials

Thermonuclear burn time and duration in laser‐driven high‐aspect‐ratio targets

H. Azechi, N. Miyanaga, R. O. Stapf, H. Takabe, A. Nishiguchi, M. Unemoto, Y. Shimada, M. Yamanaka, T. Yamanaka, S. Nakai, C. Yamanaka, T. Iguchi, and M. Nakazawa

Appl. Phys. Lett. 55, 945 (1989); http://dx.doi.org/10.1063/1.101731 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
Thermonuclear burn time and burn duration in ablatively driven high‐aspect‐ratio targets have been measured. While the observed burn times were in agreement with results of a one‐dimensional hydrodynamic simulation, the observed burn durations were excessively long.
Show PACS
52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.50.Lp Plasma production and heating by shock waves and compression
52.55.Pi Fusion products effects (e.g., alpha-particles, etc.), fast particle effects
52.65.-y Plasma simulation

Dielectric liquids for possible use in pulsed power switches

L. G. Christophorou and H. Faidas

Appl. Phys. Lett. 55, 948 (1989); http://dx.doi.org/10.1063/1.101732 (3 pages)

Full Text: | Download PDF

Show Abstract
Dielectric liquids for possible use as (opening/closing) switching materials in pulsed power technology are identified. A concept for a dielectric‐liquid‐pulsed‐power switch employing flashlamps is outlined.
Show PACS
84.32.Dd Connectors, relays, and switches
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
77.90.+k Other topics in dielectrics, piezoelectrics, and ferroelectrics and their properties (restricted to new topics in section 77)
52.90.+z Other topics in physics of plasmas and electric discharges (restricted to new topics in section 52)

Electron transport coefficients in dusty argon plasmas

Michael J. McCaughey and Mark J. Kushner

Appl. Phys. Lett. 55, 951 (1989); http://dx.doi.org/10.1063/1.101733 (3 pages) | Cited 22 times

Full Text: | Download PDF

Show Abstract
Low‐temperature partially ionized plasmas, as used in plasma processing reactors and gas lasers, are often contaminated by gas phase particulates (1–10’s μm radius) resulting from electrode sputtering or gas phase chemical reactions. Particles having sizes comparable to or greater than the Debye length will negatively charge in the plasma and form a sheath at their surfaces. These particles thereby become a Coulomb‐like scatterer of electrons. A hybrid Monte Carlo/molecular dynamics computer simulation has been developed to study the effect of such particulate contamination on electron transport in glow discharges and this letter presents results for argon. The dominant effect of particulate contamination is to shift the electron energy distribution to lower energies, thereby reducing electron impact rate coefficients for processes which have high threshold energies, particularly ionization. The self‐sustaining E/N of discharges having dusty plasmas is therefore increased. The effect, proportional to particle density, begins to become important at a density of 103–105 cm−3 for gas pressures of 0.1–3 Torr.
Show PACS
52.80.Hc Glow; corona
51.10.+y Kinetic and transport theory of gases
51.50.+v Electrical properties (ionization, breakdown, electron and ion mobility, etc.)
52.25.Fi Transport properties

Role of the crystallographic orientation on the incorporation of indium in HgCdTe epilayers grown by molecular beam epitaxy

I. K. Sou, P. S. Wijewarnasuriya, M. Boukerche, and J. P. Faurie

Appl. Phys. Lett. 55, 954 (1989); http://dx.doi.org/10.1063/1.101734 (3 pages) | Cited 5 times

Full Text: | Download PDF

Show Abstract
In‐doped HgCdTe films have been grown by molecular beam epitaxy (MBE) on CdTe substrates in the (100) crystallographic orientation. They were characterized by Hall and secondary‐ion mass spectroscopy measurements. The results are compared with those of In‐doped HgCdTe layers grown in the (111)B orientation. In the (111)B orientation indium is incorporated in the metal site whereas in the (100) orientation it appears that indium is mainly incorporated interstitially. The results agree with a Te antisite model as a possibility for explaining the electrical behavior of (100) HgCdTe grown by MBE.
Show PACS
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.61.Ga II-VI semiconductors
68.55.-a Thin film structure and morphology

X‐ray absorption fine structure of diamond films grown by chemical vapor deposition

T. W. Capehart, T. A. Perry, C. B. Beetz, D. N. Belton, G. B. Fisher, C. E. Beall, B. N. Yates, and J. W. Taylor

Appl. Phys. Lett. 55, 957 (1989); http://dx.doi.org/10.1063/1.101735 (3 pages) | Cited 12 times

Full Text: | Download PDF

Show Abstract
We report the x‐ray absorption spectra for two hard carbon films grown by filament‐assisted chemical vapor deposition in gas mixtures of 1% and 0.18% methane in hydrogen. Although the Raman spectra of these two films suggest significant differences in structure, the x‐ray absorption near‐edge structure and extended x‐ray absorption fine structure (EXAFS) are very similar. Analyzing the EXAFS from these films with a diamond crystal as a reference gives carboncarbon bond lengths of 1.53±0.03 Å. This result is consistent with diamond and incompatible with graphite. We conclude that the carbon films have the same local structure as diamond.
Show PACS
78.70.Dm X-ray absorption spectra
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.-a Thin film structure and morphology
78.30.Hv Other nonmetallic inorganics

Influence of beam coherence on measurements of roughness in film growth

M. G. Lagally and R. Kariotis

Appl. Phys. Lett. 55, 960 (1989); http://dx.doi.org/10.1063/1.101736 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
Diffracted intensity oscillations in epitaxial growth are discussed in terms of the existing roughness scale on the surface and the coherence length of the radiation used to measure them. It is shown that for systems with unbounded interface width growth, the greater the coherence length, the more rapidly the oscillations damp out. On the other hand, oscillations can occur and be persistent if the coherence length of the beam is much shorter than the characteristic horizontal length scale for roughness, even in the case where unbounded growth is present. This behavior is governed by the magnitude of the coherence length of the beam, relative to the lateral length scale that characterizes the surface structure.
Show PACS
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.35.Fx Diffusion; interface formation
68.60.Bs Mechanical and acoustical properties

Structural characterization of an Sb delta‐doping layer in silicon

W. F. J. Slijkerman, P. M. Zagwijn, J. F. van der Veen, A. A. van Gorkum, and G. F. A. van de Walle

Appl. Phys. Lett. 55, 963 (1989); http://dx.doi.org/10.1063/1.101690 (3 pages) | Cited 14 times

Full Text: | Download PDF

Show Abstract
Delta‐function doped layers in Si have been prepared by deposition of Sb on Si(001) followed by solid phase epitaxy of Si. The morphology and the crystal quality of the grown structures are characterized in situ during all stages of preparation by high‐resolution Rutherford backscattering spectrometry. The obtained doping profile is found to consist of a <0.8‐nm‐wide spike and a 4‐nm‐long tail in front of the spike. A large fraction of about 70% of the Sb atoms is confined to the spike while the remaining 30% is located in the tail. Ion channeling and blocking measurements demonstrate that at least 95% of the Sb atoms is located on substitutional lattice sites. At temperatures exceeding 1000 K, the Sb profile broadens and Sb atoms diffuse towards the surface where they desorb.
Show PACS
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.55.-a Thin film structure and morphology
81.15.Np Solid phase epitaxy; growth from solid phases
68.35.Fx Diffusion; interface formation

Formation of low reverse current ion‐implanted n+p junctions by low‐temperature annealing

Y. Ishihara, A. Okita, K. Yoshikawa, T. Shibata, T. Ohmi, T. Nitta, J. Sugiura, and N. Ohwada

Appl. Phys. Lett. 55, 966 (1989); http://dx.doi.org/10.1063/1.101691 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
By employing stress compensation technology in conjunction with an ultrahigh vacuum ion implanter, we have obtained two orders of magnitude smaller reverse‐bias current levels in n+p junctions annealed at 550 °C as compared to the previous data. When samples are made with an optimum stress compensation condition, the magnitude of reverse‐bias currents in n+p junctions as well as the carrier deactivation during post‐implantation anneal becomes smallest. In order to further reduce the reverse‐bias current level, it is shown that the elimination of contamination involvement during the implantation process is most essential.
Show PACS
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.40.Hp Lithography, masks and pattern transfer
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.40.Rs Electrical and magnetic properties related to treatment conditions

Heteroepitaxial Pb1−xSnxSe on Si infrared sensor array with 12 μm cutoff wavelength

H. Zogg, C. Maissen, J. Masek, S. Blunier, A. Lambrecht, and M. Tacke

Appl. Phys. Lett. 55, 969 (1989); http://dx.doi.org/10.1063/1.101692 (3 pages) | Cited 11 times

Full Text: | Download PDF

Show Abstract
An array of photovoltaic infrared sensors with 12 μm cutoff wavelength has been fabricated for the first time in a narrow‐gap semiconductor layer grown heteroepitaxially on Si. Heteroepitaxy is achieved using intermediate stacked epitaxial CaF2‐SrF2‐BaF2 buffer layers to overcome the large lattice as well as thermal expansion mismatch between narrow‐gap Pb1−xSnxSe and Si. The IR sensors exhibit resistance‐area products up to 0.3 Ω cm2 at 77 K. This corresponds to sensitivities which are above the 300 K background noise limit and only 2–5 times lower than those of state of the art Hg1−xCdxTe sensors on CdZnTe substrates with the same cutoff wavelengths.
Show PACS
85.60.Gz Photodetectors (including infrared and CCD detectors)
68.55.-a Thin film structure and morphology
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Ga adatom migration over a nonplanar substrate during molecular beam epitaxial growth of GaAs/AlGaAs heterostructures

S. Nilsson, E. Van Gieson, D. J. Arent, H. P. Meier, W. Walter, and T. Forster

Appl. Phys. Lett. 55, 972 (1989); http://dx.doi.org/10.1063/1.101693 (3 pages) | Cited 30 times

Full Text: | Download PDF

Show Abstract
Thickness variations in GaAs/AlGaAs quantum wells grown on patterned substrates by molecular beam epitaxy have been analyzed by spatially and spectrally resolved low‐temperature cathodoluminescence. For the lower and upper (100) facets joined by an angled (311)A facet, relative increases in quantum well thicknesses up to ≂6% and 20% are observed, respectively, in the vicinity of the intersection of the facets. Following an exponential behavior, the Ga adatom migration length is found to be in the range of 1–2 μm on both the lower and upper (100) facets and is independent of quantum well thickness. This migration length is orders of magnitude greater than previously reported for Ga adatoms during molecular beam epitaxy growth.
Show PACS
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.Fx Diffusion; interface formation
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
85.60.-q Optoelectronic devices

Resistivity of chemical vapor deposited diamond films

M. I. Landstrass and K. V. Ravi

Appl. Phys. Lett. 55, 975 (1989); http://dx.doi.org/10.1063/1.101694 (3 pages) | Cited 245 times

Full Text: | Download PDF

Show Abstract
Diamond films grown by plasma chemical vapor deposition techniques display a fairly low resistivity (∼106 Ω cm). Heat treating the films causes an increase in the resistivity by up to six orders of magnitude. The low resistivity of the as‐grown films is postulated to be due to hydrogen passivation of traps in the films. Annealing causes dehydrogenation resulting in the electrical activation of deep traps with an attendant increase in the resistivity. This mechanism has been confirmed by an observed reduction of the resistivity of the heat‐treated films when they are subjected to a plasma hydrogen treatment.
Show PACS
73.61.Cw Elemental semiconductors
73.61.Jc Amorphous semiconductors; glasses
73.61.Le Other inorganic semiconductors
81.40.Rs Electrical and magnetic properties related to treatment conditions
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Incorporation of Si in δ‐doped GaAs studied by local vibrational mode spectroscopy

J. Wagner, M. Ramsteiner, W. Stolz, M. Hauser, and K. Ploog

Appl. Phys. Lett. 55, 978 (1989); http://dx.doi.org/10.1063/1.101695 (3 pages) | Cited 28 times

Full Text: | Download PDF

Show Abstract
Raman scattering by local vibrational modes has been used to study the incorporation of Si in single δ‐doped GaAs layers. Placing the doping spike at different depths underneath the surface, a depth profile of the dopant concentration incorporated on lattice sites has been obtained. For samples grown by molecular beam epitaxy under conditions which are known to lead to a significant broadening of the doping spike, the applied Raman technique reveals the incorporation of Si on Ga sites with a broadening of the Si distribution in excess of 20 nm.
Show PACS
78.30.Fs III-V and II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
63.20.Pw Localized modes

Composition and substrate effects on the structure of thin‐film CuGaSe2

H. Hallak, D. Albin, and R. Noufi

Appl. Phys. Lett. 55, 981 (1989); http://dx.doi.org/10.1063/1.102454 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
Two opposite trends in the variation of d spacing (2θ) with composition are observed for the (112) peak position in x‐ray diffraction patterns for evaporated CuGaSe2 films on different substrates. The 2θ value tends to increase with increasing molecularity for Al2 O3 and 7059 glass substrates and decreases for Mo‐coated Al2 O3 and 7059 glass substrates. The films are composed of CuGaSe2 plus impurity phases, and the ‘‘actual’’ molecularity of the CuGaSe2 does not exceed 0.5.
Show PACS
68.55.-a Thin film structure and morphology
68.55.Nq Composition and phase identification
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.

Effect of carrier confinement on the laser‐induced etching of GaAs/AlGaAs heterostructures

M. N. Ruberto, A. E. Willner, D. V. Podlesnik, and R. M. Osgood

Appl. Phys. Lett. 55, 984 (1989); http://dx.doi.org/10.1063/1.101696 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
Laser‐induced photochemical etching was used to etch GaAs/AlGaAs multilayered material. In this carrier‐driven process, the confinement of photogenerated holes to the alternating GaAs layers resulted in the controlled lateral etching of buried GaAs layers. An application of this etching technique to forming microcleaved laser facets is described.
Show PACS
81.65.-b Surface treatments
73.40.Mr Semiconductor-electrolyte contacts
85.40.Hp Lithography, masks and pattern transfer
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Metalorganic chemical vapor deposition of indium phosphide by pulsing precursors

W. K. Chen, J. C. Chen, L. Anthony, and P. L. Liu

Appl. Phys. Lett. 55, 987 (1989); http://dx.doi.org/10.1063/1.101697 (3 pages) | Cited 10 times

Full Text: | Download PDF

Show Abstract
We have grown InP by supplying precursors alternately into the reactor of a metalorganic chemical vapor deposition system. Epitaxial growth has been obtained with a substrate temperature as low as 330 °C. The growth process is mass transport limited in the temperature range of 420–580 °C. It is kinetic controlled below 400 °C. At 340 °C, we have achieved monolayer growth in each cycle, i.e., atomic layer epitaxy.
Show PACS
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Effect of As4 overpressure on initial growth of gallium arsenide on silicon by molecular beam epitaxy

J. E. Palmer, G. Burns, C. G. Fonstad, and C. V. Thompson

Appl. Phys. Lett. 55, 990 (1989); http://dx.doi.org/10.1063/1.101698 (3 pages) | Cited 22 times

Full Text: | Download PDF

Show Abstract
We have demonstrated great improvement in the smoothness and defect density of GaAs films on Si by lowering the arsenic overpressure during growth of the initial layer (the first 500 Å) of GaAs. We have studied the morphology and defect density of GaAs on Si films in which the initial layers were grown under either low As4 overpressure (7As4:1Ga, beam equivalent pressure) or high As4 overpressure (15As4:1Ga) conditions, with a constant gallium flux. In the early stages of growth there is a significant change in island morphology depending on the As4 overpressure. There is dramatic improvement of surface smoothness and crystal quality with reduced arsenic overpressure for 500‐Å‐thick layers both immediately after growth at 350 °C and after heating to 580 °C. Diodes fabricated in 3.5‐μm‐thick films grown on initial layers that were grown under low arsenic overpressure have a very sharp reverse breakdown at voltages as high as 45 V, whereas diodes fabricated in films grown on initial layers that were grown under high arsenic overpressure have a soft reverse breakdown at about 5 V. This demonstrates a significant reduction in the density of electrically active defects in the thick GaAs films with decreasing arsenic overpressure conditions during growth of the initial 500 Å of GaAs on Si. The improvement in film quality for low As4 overpressures is discussed in terms of the observed changes in island morphology.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
85.30.De Semiconductor-device characterization, design, and modeling
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

Impact ionization rates in an InGaAs/InAlAs superlattice

Toshiaki Kagawa, Yuichi Kawamura, Hiromitsu Asai, Mitsuru Naganuma, and Osamu Mikami

Appl. Phys. Lett. 55, 993 (1989); http://dx.doi.org/10.1063/1.101699 (3 pages) | Cited 16 times

Full Text: | Download PDF

Show Abstract
An In0.53Ga0.47As/In0.52Al0.48As superlattice avalanche photodiode is fabricated by molecular beam epitaxy, and ionization rates are measured. The electron ionization rate is enhanced by a factor of 20 over hole ionization rate. This is the first time that such a remarkable increase has been observed for a superlattice. The increase is attributed to the large conduction‐band offset.
Show PACS
85.60.Dw Photodiodes; phototransistors; photoresistors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
85.30.De Semiconductor-device characterization, design, and modeling
79.20.Kz Other electron-impact emission phenomena

Diffusion of implanted beryllium in gallium arsenide as a function of anneal temperature and dose

Michael D. Deal and Heyward G. Robinson

Appl. Phys. Lett. 55, 996 (1989); http://dx.doi.org/10.1063/1.101700 (3 pages) | Cited 14 times

Full Text: | Download PDF

Show Abstract
The diffusion of implanted Be in GaAs was studied by annealing samples of GaAs implanted with low and high doses of Be. The high‐dose (1×1014 cm−2) samples show an increase in diffusion with increasing anneal temperature from 700 to 900 °C. However, the low‐dose (2×1013 cm−2) samples show a decrease in diffusion as the temperature is increased. The temperature dependence of the low‐dose case can be reversed by coimplantation of 1×1014 cm−2 boron. This behavior is explained in terms of the substitutional‐interstitial diffusion mechanism and the relative concentrations of Be interstitials and Be substitutionals for the different cases.
Show PACS
66.30.J- Diffusion of impurities
61.72.U- Doping and impurity implantation
61.80.Jh Ion radiation effects

A stable n‐channel indium phosphide field‐effect transistor with an amorphous hydrogenated silicon gate

E. Roditi, A. A. Iliadis, and A. Christou

Appl. Phys. Lett. 55, 999 (1989); http://dx.doi.org/10.1063/1.101701 (3 pages) | Cited 1 time

Full Text: | Download PDF

Show Abstract
InP field‐effect transistors (FETs) with an amorphous hydrogenated Si (a‐Si:H) gate resulted in metal‐insulator‐like FET characteristics with no observable current drift and a transconductance of 30–38 mS/mm. The stability of this gate system is attributed to the hydrogen passivation of the InP surface and the low temperature of a‐Si:H deposition, as indicated by Auger and low‐energy electron probe analysis.
Show PACS
85.30.Tv Field effect devices
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
85.30.De Semiconductor-device characterization, design, and modeling
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close