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18 Sep 1989

Volume 55, Issue 12, pp. 1149-1266

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Quantum‐confined field‐effect light emitters with high‐speed switching capability

Y. Kan, M. Yamanishi, M. Okuda, K. Mukaiyama, T. Ohnishi, M. Kawamoto, and I. Suemune

Appl. Phys. Lett. 55, 1149 (1989); http://dx.doi.org/10.1063/1.101680 (3 pages) | Cited 9 times

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The field control of luminescent characteristic is observed with the three‐terminal quantum‐confined field‐effect light‐emitting device at a high temperature of 100–300 K. The modulation scheme caused by the field‐induced change in radiative lifetime without change in carrrier density is demonstrated in the practical device. A fast switching of the spontaneous emission intensity free from lifetime limitation is obtained.
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85.60.Jb Light-emitting devices
85.30.Tv Field effect devices
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
85.30.Pq Bipolar transistors

Thermodynamics approach to catastrophic optical mirror damage of AlGaAs single quantum well lasers

A. Moser, E.‐E. Latta, and D. J. Webb

Appl. Phys. Lett. 55, 1152 (1989); http://dx.doi.org/10.1063/1.101681 (3 pages) | Cited 32 times

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The time dependence of catastrophic optical damage (COD) was studied for the cw operation of AlGaAs single quantum well lasers with cleaved mirrors. An empirical rule is proposed, which yields the time for a COD failure in the form of a rate equation, containing a frequency factor and an activation energy. In this way COD is explained as a thermally activated process, depending on the mirror temperature.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Asymmetric dual quantum well laser—wavelength switching controlled by injection current

Sotomitsu Ikeda, Akira Shimizu, and Toshitami Hara

Appl. Phys. Lett. 55, 1155 (1989); http://dx.doi.org/10.1063/1.101682 (3 pages) | Cited 20 times

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We have performed the first experiment on a novel laser diode, the lasing wavelength of which can be switched with increasing current. Wavelength switching over 13 nm under continuous operation, as well as lasing at dual wavelengths, has been achieved for the first time.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
78.45.+h Stimulated emission

Efficient frequency doubling of a mode‐locked diode‐laser‐pumped Nd:YAG laser

G. T. Maker and A. I. Ferguson

Appl. Phys. Lett. 55, 1158 (1989); http://dx.doi.org/10.1063/1.101683 (3 pages) | Cited 3 times

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We report on high‐efficiency frequency doubling of a mode‐locked diode‐laser‐pumped Nd:YAG laser to 532 nm in a crystal of MgO:LiNbO3 in an external enhancement ring cavity. At a pump power of 500 mW the mode‐locked Nd:YAG laser produced an average power of 66 mW incident on the enhancement cavity in pulses of 12 ps duration at a repetition rate of 366 MHz. This has been frequency doubled with a conversion efficiency of 53% to produce pulses at 532 nm of 35 mW average power in bandwidth‐limited pulses of 9.5 ps duration.
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42.60.Fc Modulation, tuning, and mode locking
42.55.Rz Doped-insulator lasers and other solid state lasers
42.55.-f Lasers
42.79.Sz Optical communication systems, multiplexers, and demultiplexers

Fabrication of integrated optical structures in polydiacetylene films by irreversible photoinduced bleaching

K. B. Rochford, R. Zanoni, Q. Gong, and G. I. Stegeman

Appl. Phys. Lett. 55, 1161 (1989); http://dx.doi.org/10.1063/1.101684 (3 pages) | Cited 38 times

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Spin‐coated and solution‐cast films of poly[5,7‐dodecadiyn‐1,12‐diol‐bis(n‐butoxycarbonyl‐methyl‐urethane)], or briefly, poly‐4BCMU, irreversibly bleach when irradiated by light tuned within the absorption band of the polymer sample. Characteristic bleaching times have been measured at several wavelengths. The refractive index of poly‐4BCMU has been measured at 1.064 μm for various photobleaching energies. Refractive index changes as large as −0.08 have been measured, and the decrease in refractive index has been used to define waveguide channels and gratings.
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78.66.Qn Polymers; organic compounds
81.40.Tv Optical and dielectric properties related to treatment conditions
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers

Integrable parametric waveguide spectrometer—a nonlinear optical device capable of resolving modes of semiconductor lasers

D. Vakhshoori, J. Walker, S. Dijaili, S. Wang, and J. S. Smith

Appl. Phys. Lett. 55, 1164 (1989); http://dx.doi.org/10.1063/1.101685 (3 pages) | Cited 8 times

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In this letter we demonstrate a new kind of spectrometer capable of resolving the modes of a 1.3 μm quaternary laser diode. The device uses the nonlinear sum frequency generation of light in the semiconductor waveguide to map out the frequency spectrum of the input beam. This device was used to obtain the spectrum of a multimode Fabry–Perot 1.3 μm laser diode. Furthermore, the same device was used to observe the shift in the individual Fabry–Perot mode as well as the shift in the overall spectrum of the laser diode as a function of current. These observations indicate that the waveguide spectrometer can be useful for applications like implementing frequency division multiplexing communication systems by allowing the determination of absolute and relative frequencies of different channels in a compact fashion.
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07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
42.79.Gn Optical waveguides and couplers
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Temperature dependence of spontaneous emission in GaAs‐AlGaAs quantum well lasers

P. Blood, A. I. Kucharska, C. T. Foxon, and K. Griffiths

Appl. Phys. Lett. 55, 1167 (1989); http://dx.doi.org/10.1063/1.101686 (3 pages) | Cited 9 times

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Using quantum well laser devices with a window in the p‐type contact, we have measured the relative change of spontaneous emission intensity at threshold with temperature for 58‐Å‐wide GaAs wells. Over the range 250–340 K the data are in good agreement with the linear relation obtained from a gain‐current calculation which includes transition broadening. This linear behavior contrasts with the stronger temperature dependence of the total measured threshold current of the same devices which includes nonradiative barrier recombination processes.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

Kinetics of pressure‐dependent gradual degradation of semiconductor lasers and light‐emitting diodes

Yu. L. Khait, J. Salzman, and R. Beserman

Appl. Phys. Lett. 55, 1170 (1989); http://dx.doi.org/10.1063/1.101687 (3 pages) | Cited 11 times

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A statistical kinetic model for gradual degradation of semiconductor lasers and light‐emitting diodes under the influence of pressure is presented. Within the framework of this model, the rate coefficient for disordering atom jumps, K, and the operating lifetime of the device, τ, are explicitly given in terms of temperature, pressure, material parameters, and free‐carrier concentration. We find that a compressive pressure reduces the effective activation energy of the rate process and therefore accelerates degradation in GaAs‐ and InP‐based devices.
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42.55.Px Semiconductor lasers; laser diodes
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
85.60.Jb Light-emitting devices

Enhancement of modulation bandwidth in InGaAs strained‐layer single quantum well lasers

K. Y. Lau, S. Xin, W. I. Wang, N. Bar‐Chaim, and M. Mittelstein

Appl. Phys. Lett. 55, 1173 (1989); http://dx.doi.org/10.1063/1.101688 (3 pages) | Cited 26 times

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It is shown that the unique properties of strained‐layer quantum well lasers can be identified by measuring the relaxation oscillation frequency as a function of optical gain. These measurements are insensitive to effects due to nonradiative recombinations and leakage currents, which can mask the beneficial effects in terms of a lower threshold current due to a reduced hole mass in strained quantum wells. The conclusion, both theoretically and experimentally, is that strained‐layer quantum well lasers have a higher differential gain but saturate at a lower gain level as compared to regular quantum well lasers. As a consequence, for a strained single quantum well, slightly higher relaxation oscillation frequency results, but only for certain limited ranges of device parameters. A multiple strained‐layer quantum well can in theory take better advantage of the higher differential gain.
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42.60.Fc Modulation, tuning, and mode locking
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes

All‐optical switching in nonlinear X junctions

J. P. Sabini, N. Finlayson, and G. I. Stegeman

Appl. Phys. Lett. 55, 1176 (1989); http://dx.doi.org/10.1063/1.101689 (3 pages) | Cited 20 times

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All‐optical switching in nonlinear X junctions with Kerr and saturable nonlinearities is analyzed using the beam propagation method. We establish that switching is possible in the nonlinear X junction, and compare its nonlinear phase shift requirements with that of other all‐optical devices.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.82.-m Integrated optics
42.79.Gn Optical waveguides and couplers
42.79.Hp Optical processors, correlators, and modulators

Noncritically phase‐matched frequency doubling using 994 nm dye and diode laser radiation in KTiOPO4

W. P. Risk, R. N. Payne, W. Lenth, C. Harder, and H. Meier

Appl. Phys. Lett. 55, 1179 (1989); http://dx.doi.org/10.1063/1.102461 (3 pages) | Cited 14 times

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The characteristic properties of noncritically phase‐matched frequency doubling in KTiOPO4 have been investigated using ∼1 μm radiation from a Styryl‐13 dye laser. Noncritically phase‐matched type II second‐harmonic generation was found to occur at 994.3 nm. The unusually wide angle, temperature, and wavelength tolerances observed for this nonlinear process are attractive for the design of practical blue‐green laser sources. A special strained‐layer InGaAs diode laser was fabricated to operate at 994 nm and generation of blue‐green 497 nm radiation by noncritically phase‐matched frequency doubling was demonstrated.
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42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
42.55.Px Semiconductor lasers; laser diodes
42.60.Fc Modulation, tuning, and mode locking

Detection of Cl in rf plasmas by laser‐excited stimulated emission

Andrew D. Sappey and Jay B. Jeffries

Appl. Phys. Lett. 55, 1182 (1989); http://dx.doi.org/10.1063/1.102260 (3 pages) | Cited 9 times

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Laser‐excited stimulated emission is used to detect chlorine atoms in a Cl2/Ar rf etching plasma. Two laser photons near 233.3 nm excite the 3p44p 4S0 electronic state of atomic chlorine in a spin‐forbidden transition from the 3p5 2P0 ground state. At modest laser fluence stimulated emission is observed from the 3p44p 4S0→3p44s 4P transition. The stimulated emission signals are compared to simultaneously acquired laser‐induced fluorescence from the same transition. The strong, collimated stimulated emission provides a means to detect atomic chlorine which only requires a single optical access window.
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52.70.Kz Optical (ultraviolet, visible, infrared) measurements
81.65.-b Surface treatments
52.25.Os Emission, absorption, and scattering of electromagnetic radiation
32.80.-t Photoionization and excitation

Dehydrogenation—a simple method of synthesizing metallic glasses

Rung‐Ywan Tsai and Shinn‐Tyan Wu

Appl. Phys. Lett. 55, 1185 (1989); http://dx.doi.org/10.1063/1.102462 (3 pages)

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Vacuum dehydrogenation of a crystalline phase CrHxCyOz results in an amorphous phase. The crystalline phase is prepared by electroplating from a cold chromic acid electrolyte with formic acid as additive.
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81.05.Kf Glasses (including metallic glasses)
81.05.Bx Metals, semimetals, and alloys
64.70.P- Glass transitions of specific systems
64.70.Q- Theory and modeling of the glass transition
61.43.Fs Glasses
61.43.-j Disordered solids

Fast photothermal measurement system for inspection of weak adhesion defects

J. Hartikainen

Appl. Phys. Lett. 55, 1188 (1989); http://dx.doi.org/10.1063/1.101651 (3 pages) | Cited 5 times

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A simple and fast photothermal measurement system for nondestructive evaluation of coatings is presented. The sample surface is scanned with a focused laser beam and the resulting temperature rise is monitored with a focused infrared detector. The laser light scattered from the sample surface is measured with a photodiode and so both the optical and the thermal image of the sample can be obtained simultaneously. The functionality of the measurement system is demonstrated with two plasma‐spray‐coated samples.
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46.80.+j Measurement methods and techniques in continuum mechanics of solids
07.20.-n Thermal instruments and apparatus
62.20.Qp Friction, tribology, and hardness
81.70.-q Methods of materials testing and analysis

Influence of the crystallinity of the alignment layer on the bistability of the surface‐stabilized ferroelectric liquid‐crystal effect

W. J. A. M. Hartmann, A. M. M. Luyckx‐Smolders, and R. P. v. Kessel

Appl. Phys. Lett. 55, 1191 (1989); http://dx.doi.org/10.1063/1.101652 (3 pages) | Cited 10 times

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The influence of the crystallinity of the alignment layers on the electro‐optical behavior of ferroelectric liquid crystals has been quantitatively demonstrated. The degree of crystallization of thin nylon 6.6 alignment layers was varied using thermal anneal methods and determined by Fourier transform infrared spectroscopy. The reaction of an obtained memory state of surface‐stabilized ferroelectric liquid‐crystal samples to small disturbing electric fields decreased when the degree of crystallization of the incorporated nylon 6.6 alignment layers was higher.
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78.66.Qn Polymers; organic compounds
61.30.Gd Orientational order of liquid crystals; electric and magnetic field effects on order
68.55.-a Thin film structure and morphology
78.30.Hv Other nonmetallic inorganics

Void formation and inhibition of layer intermixing in ion‐impIanted GaAs/AlGaAs superlattices

Samuel Chen, S.‐Tong Lee, G. Braunstein, and T. Y. Tan

Appl. Phys. Lett. 55, 1194 (1989); http://dx.doi.org/10.1063/1.101653 (3 pages) | Cited 13 times

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Voids have been found in the near‐surface region of GaAs/AlGaAs superlattices in a transmission electron microscopy study. The superlattices were Si‐ or Al‐implanted and subsequently either furnace or rapid thermally annealed. Concurrent with the presence of voids is an inhibition of superlattice layer intermixing enhancement in the near‐surface region. This inhibition does not occur in the deeper region of the samples where voids are not found. The voids can form via condensation of the Ga and As vacancies produced by the implantation process. We suggest that voids can depress dopant activation, suppress dopant diffusion, and inhibit the superlattice layer intermixing enhancement.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.35.Fx Diffusion; interface formation
68.35.Dv Composition, segregation; defects and impurities
61.72.jd Vacancies
61.72.jj Interstitials

Surface stress effects on the critical film thickness for epitaxy

R. C. Cammarata and K. Sieradzki

Appl. Phys. Lett. 55, 1197 (1989); http://dx.doi.org/10.1063/1.101654 (2 pages) | Cited 28 times

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An analysis of the critical thickness dependence on misfit for epitaxy is presented including effects due to surface stresses. It is shown that these surface stress effects, which have not been included in previous theories of epitaxy, can have a major influence on the critical thickness, especially for relatively large misfits. A simple model incorporating effects due to compressive surface stresses is given which, compared to previous theories, predicts significantly larger (smaller) critical thicknesses when the stress‐free lattice parameter of the film is greater (less) than the lattice parameter of the substrate.
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68.55.-a Thin film structure and morphology
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
68.35.Md Surface thermodynamics, surface energies
68.35.Gy Mechanical properties; surface strains

Silicon crystallite formation in ion‐implanted quartz

Uma B. Ramabadran, Howard E. Jackson, and G. C. Farlow

Appl. Phys. Lett. 55, 1199 (1989); http://dx.doi.org/10.1063/1.102463 (3 pages) | Cited 4 times

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Rapid thermally annealed silicon‐implanted x‐cut α‐quartz samples have been examined by Rutherford backscattering and Raman microprobe spectroscopy. The data indicate that the silicon has diffused at 1200 °C to form a buried layer of crystallites of size 1–10 μm. The crystallites are preferentially oriented and under substantial stress.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
66.30.J- Diffusion of impurities
78.30.Hv Other nonmetallic inorganics
78.66.-w Optical properties of specific thin films

Early stages of the heteroepitactic growth of hematite on (0001) Al2O3 by transmission electron microscopy

Lisa A. Tietz, Scott R. Summerfelt, Gerald R. English, and C. Barry Carter

Appl. Phys. Lett. 55, 1202 (1989); http://dx.doi.org/10.1063/1.102464 (3 pages) | Cited 16 times

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A new method for studying the early stages of the growth of oxide epilayers by transmission electron microscopy (TEM) is described. The technique uses well‐characterized, single‐crystal TEM foils as substrates for the deposition process. In the present study, chemical vapor deposition was used to form small islands (50–300 nm) of α‐Fe2O3 on (0001) oriented Al2O3 thin‐foil substrates. The preferential nucleation of islands at surface steps on the alumina is clearly demonstrated. Selected area diffraction and moiré fringe pattern analysis are used to show the epitactic nature of the growth and to study the island morphology.
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81.15.Kk Vapor phase epitaxy; growth from vapor phase
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

Reversible light‐induced reactivation of acceptors in p‐type hydrogenated GaAs

I. Szafranek, S. S. Bose, and G. E. Stillman

Appl. Phys. Lett. 55, 1205 (1989); http://dx.doi.org/10.1063/1.101655 (3 pages) | Cited 17 times

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We report a new effect in which hydrogen‐passivated acceptor impurities in p‐type GaAs are reactivated by low‐intensity, above band gap illumination. Low‐temperature photolumines cence was used to monitor the acceptor reactivation process. The light‐induced reactivation is persistent at cryogenic temperatures, but the material relaxes back to the hydrogen‐passivated state after annealing at moderate temperatures. Preliminary kinetic considerations, as well as the implications of this phenomenon on the fundamental and technological aspects of hydrogen passivation in semiconductors, are briefly discussed.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
73.20.Hb Impurity and defect levels; energy states of adsorbed species
78.55.Cr III-V semiconductors
61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces

J. M. Olson, R. K. Ahrenkiel, D. J. Dunlavy, Brian Keyes, and A. E. Kibbler

Appl. Phys. Lett. 55, 1208 (1989); http://dx.doi.org/10.1063/1.101656 (3 pages) | Cited 109 times

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Using time‐resolved photoluminescence, we have examined the optoelectronic properties of Ga0.5In0.5P/GaAs/Ga0.5In0.5P double heterostructures grown by organometallic chemical vapor deposition. For comparison, similar structures using Al0.4Ga0.6As/GaAs and Al0.5In0.5P/GaAs lattice‐matched heterointerfaces were also examined. For the Ga0.5In0.5P/GaAs heterostructure, we show that the recombination velocity at a Ga0.5In0.5P/GaAs interface can be less than 1.5 cm/s. As a result, photoluminescence decay times as long as 14 μs have been observed in undoped GaAs double heterostructures. This photoluminescence decay time varies with temperature as T1.59, characteristic of radiative recombination not limited by surface or bulk nonradiative recombination processes. For the Al0.4Ga0.6As/GaAs and Al0.5In0.5P/GaAs heterostructures examined in this study, the upper limits of the interface recombination velocity were 210 and 900 cm/s, respectively.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors

Material‐dependent amorphization and epitaxial crystallization in ion‐implanted AlAs/GaAs layer structures

A. G. Cullis, N. G. Chew, C. R. Whitehouse, D. C. Jacobson, J. M. Poate, and S. J. Pearton

Appl. Phys. Lett. 55, 1211 (1989); http://dx.doi.org/10.1063/1.101657 (3 pages) | Cited 26 times

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When AlAs/GaAs layer samples are subjected to Ar+ ion bombardment at liquid‐nitrogen temperature, it is shown that very different damage structures are produced in the two materials. While the GaAs is relatively easily amorphized, the AlAs is quite resistant to damage accumulation and remains crystalline for the ion doses employed in these investigations. Epitaxial regrowth of buried amorphous GaAs layers of thicknesses up to 150 nm can be induced by rapid thermal annealing. It is demonstrated that differences in the initial damage state have a strong influence upon the nature of lattice defects produced by annealing.
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61.80.Jh Ion radiation effects
68.35.Dv Composition, segregation; defects and impurities
68.35.Fx Diffusion; interface formation
81.15.Np Solid phase epitaxy; growth from solid phases

Anisotropic transport and nonparabolic miniband in a novel in‐plane superlattice consisting of a grid‐inserted selectively doped heterojunction

J. Motohisa, M. Tanaka, and H. Sakaki

Appl. Phys. Lett. 55, 1214 (1989); http://dx.doi.org/10.1063/1.101658 (3 pages) | Cited 19 times

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Transport properties of electrons in a novel in‐plane superlattice structure are studied and the field‐effect transistor action has been demonstrated. The structure consists of an n‐AlGaAs/GaAs modulation‐doped heterojunction in which an array of monolayer‐thick AlAs grid is embedded with an average period of 162 Å in the channel region of the heterojunction. This grid has been prepared with molecular beam epitaxy by depositing a half monolayer of AlAs on a GaAs (001) vicinal plane, where periodically spaced atomic terraces are formed. The electron mobilities μ∥,μ⊥ parallel and normal to the grid are measured as functions of electron concentration NS. While the mobility ratio (μ∥/μ⊥) is nearly unity at low NS, the ratio is found to get as large as 2.2 as NS increases. This anisotropic behavior of μ is well accounted for by the calculated nonparabolicity in the miniband structure of in‐plane superlattices.
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73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.40.Gk Tunneling
85.30.Tv Field effect devices

Growth and characterization of ZnTe films grown on GaAs, InAs, GaSb, and ZnTe

Y. Rajakarunanayake, B. H. Cole, J. O. McCaldin, D. H. Chow, J. R. Söderström, T. C. McGill, and C. M. Jones

Appl. Phys. Lett. 55, 1217 (1989); http://dx.doi.org/10.1063/1.101659 (3 pages) | Cited 29 times

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We report the successful growth of ZnTe on nearly lattice‐matched III‐V buffer layers of InAs (0.75%), GaSb (0.15%), and on GaAs and ZnTe by molecular beam epitaxy. In situ reflection high‐energy electron diffraction measurements showed the characteristic streak patterns indicative of two‐dimensional growth. Photoluminescence measurements on these films show strong and sharp features near the band edge with no detectable luminescence at longer wavelengths. The integrated photoluminescence intensity from the ZnTe layers increased with better lattice match to the buffer layer. The ZnTe epilayers grown on high‐purity ZnTe substrates exhibited stronger luminescence than the substrates. We observe narrow luminescence linewidths (full width at half maximum ≊1–2 Å) indicative of uniform high quality growth. Secondary‐ion mass spectroscopy and electron microprobe measurements, however, reveal substantial outdiffusion of Ga and In for growths on the III‐V buffer layers.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.55.Et II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.35.Fx Diffusion; interface formation

Low‐temperature photoluminescence from CdTe grown by hot‐wall epitaxy on GaAs

K. Lischka, T. Schmidt, A. Pesek, and H. Sitter

Appl. Phys. Lett. 55, 1220 (1989); http://dx.doi.org/10.1063/1.101660 (3 pages) | Cited 2 times

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The low‐temperature near‐band‐edge photoluminescence of thick (d≊36 μm) (100)CdTe epilayers grown on (100)GaAs substrates is investigated. Besides a dominating bound exciton emission, evidence for free‐exciton emission (n=1 and 2) and two electron transitions (TETs) of donor‐bound excitons is found. The defect involved in the TET is most likely a gallium‐related donor. This is concluded from the TET line wavelength adopting recent bulk CdTe TET data. A new emission line at 781.4 nm (1586.7 meV) is observed. It is tentatively assigned to a TET of a free exciton.
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78.55.Et II-VI semiconductors
71.35.-y Excitons and related phenomena
73.20.Hb Impurity and defect levels; energy states of adsorbed species
81.15.Kk Vapor phase epitaxy; growth from vapor phase
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