APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

2 Oct 1989

Volume 55, Issue 14, pp. 1373-1479

Page 1 of 2 Pages Next Page | Jump to Page

Multiple quantum well optical waveguides with large absorption edge blue shift produced by boron and fluorine impurity‐induced disordering

M. O’Neill, A. C. Bryce, J. H. Marsh, R. M. De La Rue, J. S. Roberts, and C. Jeynes

Appl. Phys. Lett. 55, 1373 (1989); http://dx.doi.org/10.1063/1.101597 (3 pages) | Cited 18 times

Full Text: | Download PDF

Show Abstract
Impurity‐induced disordering of GaAs/AlGaAs multiple quantum well waveguide structures has been carried out using the neutral impurities boron and fluorine, introduced by ion implantation and followed by thermal annealing. Substantial blue shifts (up to 100 meV) in the absorption edge have been obtained and, for similar conditions, fluorine‐induced disordering produces larger shifts than boron‐induced disordering. Optical transmission measurements performed in slab and rib waveguides indicate that the additional contribution to the absorption coefficient associated with boron disordering is 15 dB cm−1 and with fluorine disordering is only 6 dB cm−1.
Show PACS
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.79.Gn Optical waveguides and couplers
42.82.-m Integrated optics
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Complete single lateral 180° phase mode operation for AlGaAs phased array lasers

M. Sagawa and T. Kajimura

Appl. Phys. Lett. 55, 1376 (1989); http://dx.doi.org/10.1063/1.101598 (2 pages) | Cited 4 times

Full Text: | Download PDF

Show Abstract
Single lateral 180° phase mode operation is realized at a light output of up to 90 mW under pulsed operation using uncoated AlGaAs phased array lasers. Phased array lasers consist of six elements. Each element has a self‐aligned structure, with an interface layer of low AlAs mole fraction, and is fabricated by a two‐step metalorganic chemical vapor deposition method, together with dry etching. Spectrally resolved, near‐field measurements show that the phased array laser oscillates in a completely single lateral mode under pulsed operation. Measurements also show that a slight broadening of the far‐field lobes under continuous wave operation is caused by generation of multiple lateral modes.
Show PACS
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried‐heterostructure quantum well lasers grown by molecular beam epitaxy

L. E. Eng, T. R. Chen, S. Sanders, Y. H. Zhuang, B. Zhao, A. Yariv, and H. Morkoç

Appl. Phys. Lett. 55, 1378 (1989); http://dx.doi.org/10.1063/1.101599 (2 pages) | Cited 28 times

Full Text: | Download PDF

Show Abstract
We report on low threshold current strained InGaAs/AlGaAs single quantum well lasers grown by molecular beam epitaxy. Broad‐area threshold current densities of 114 A/cm2 at 990 nm were measured for 1540‐μm‐long lasers. Threshold currents of 2.4 mA at 950 nm were obtained for an uncoated buried‐heterostructure device with a 2‐μm‐wide stripe and 425‐μm‐long cavity. With reflective coatings the best device showed 0.9 mA threshold current (L=225 μm). Preliminary modulation measurements show bandwidths up to 5.5 GHz limited by the detector response.
Show PACS
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
42.60.Fc Modulation, tuning, and mode locking

New class of unstable orbits of the equilibrium electrons in free‐electron lasers

Shi‐Chang Zhang and Zhong Zhang

Appl. Phys. Lett. 55, 1380 (1989); http://dx.doi.org/10.1063/1.101600 (2 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
We present a theoretical prediction of a new class of unstable orbits of the equilibrium electrons in free‐electron lasers, which is entirely associated with the radial self‐electric field and azimuthal self‐magnetic field. It is also pointed out that these self‐fields may deteriorate the beam quality and thus decrease the growth rate of the free‐electron laser mode.
Show PACS
41.60.Cr Free-electron lasers
41.60.-m Radiation by moving charges
52.59.Px Hard X-ray sources
41.75.Ht Relativistic electron and positron beams

Bias‐controlled intersubband wavelength switching in a GaAs/AlGaAs quantum well laser

K. Berthold, A. F. J. Levi, S. J. Pearton, R. J. Malik, W. Y. Jan, and J. E. Cunningham

Appl. Phys. Lett. 55, 1382 (1989); http://dx.doi.org/10.1063/1.101601 (3 pages) | Cited 15 times

Full Text: | Download PDF

Show Abstract
The light emission characteristic of a GaAs/AlGaAs single quantum well laser with an intracavity monolithic loss modulator has been investigated. Discrete, widely separated, wavelength switching from the first (875 nm) to the second (842 nm) subband is achieved by changing the applied modulator bias. In addition, we show that 2 mW of lasing light power may be modulated with a change in current of 250 μA and a voltage change of 1 V.
Show PACS
42.55.Px Semiconductor lasers; laser diodes
42.55.Rz Doped-insulator lasers and other solid state lasers
42.60.Fc Modulation, tuning, and mode locking
42.82.-m Integrated optics

Effect of water vapor on a CH4‐H2 discharge plasma

R. B. Lockwood, R. E. Miers, L. W. Anderson, J. E. Lawler, and Chun C. Lin

Appl. Phys. Lett. 55, 1385 (1989); http://dx.doi.org/10.1063/1.101602 (3 pages) | Cited 3 times

Full Text: | Download PDF

Show Abstract
The effects on a CH4 ‐H2 discharge plasma due to the addition of water vapor to the feed gas have been studied. Surprisingly it is found that the concentrations of most positive and negative hydrocarbon ions in the discharge are substantially increased. Possible mechanisms for the increase are presented.
Show PACS
52.80.Dy Low-field and Townsend discharges
52.25.Jm Ionization of plasmas

Pendant benzene in hydrogenated diamond‐like carbon

M. A. Tamor, C. H. Wu, R. O. Carter, and N. E. Lindsay

Appl. Phys. Lett. 55, 1388 (1989); http://dx.doi.org/10.1063/1.101603 (3 pages) | Cited 29 times

Full Text: | Download PDF

Show Abstract
We show that nearly all of the infrared absorption associated with sp2 coordination in diamond‐like carbon deposited from benzene plasma is due to pendant (mono‐substituted) benzene. Because these pendant groups have little effect on the optical and mechanical properties of the film, which are determined by the connected covalent network to which they attach, they obscure the connection between those properties and the sp3 /sp2 bonding ratio in diamond‐like carbon.
Show PACS
78.66.-w Optical properties of specific thin films
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.60.Bs Mechanical and acoustical properties

Hydrogen passivation of electrically active defects in diamond

M. I. Landstrass and K. V. Ravi

Appl. Phys. Lett. 55, 1391 (1989); http://dx.doi.org/10.1063/1.101604 (3 pages) | Cited 171 times

Full Text: | Download PDF

Show Abstract
Subjecting natural diamond single crystals to the action of atomic hydrogen in a hydrogen plasma is shown to result in the passivation of interband states in the crystal resulting in a marked reduction in the resistivity to about 105 Ω cm from the expected high resistivity of∼1016 Ω cm. When the hydrogenated crystals are heat treated in a neutral ambient, the hydrogen can be expelled from the crystals, restoring the high resistivity. The behavior of natural diamond crystals, with respect to the effects of hydrogen, is shown to be similar to the behavior of diamond thin films synthesized by plasma‐enhanced chemical vapor deposition techniques.
Show PACS
81.40.Rs Electrical and magnetic properties related to treatment conditions
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.Nq Composition and phase identification
73.61.Ng Insulators

Plan‐view transmission electron diffraction measurement of roughness at buried Si/SiO2 interfaces

J. M. Gibson, M. Y. Lanzerotti, and V. Elser

Appl. Phys. Lett. 55, 1394 (1989); http://dx.doi.org/10.1063/1.102280 (3 pages) | Cited 29 times

Full Text: | Download PDF

Show Abstract
We have developed a novel technique for determining interfacial roughness from plan‐view transmission electron diffraction. Certain bulk forbidden Bragg reflections can occur due to crystal termination at surfaces and are very sensitive to steps on crystal boundaries. We demonstrate the technique in the study of Si/SiO2 interfaces and observe that interfaces appear to be significantly flatter than previously found, especially after post‐oxidation annealing. The technique is simply quantified and is more reliable than those which require stripping of the oxide to expose the interface.
Show PACS
68.35.Gy Mechanical properties; surface strains
61.05.J- Electron diffraction and scattering

Doping of diamond by coimplantation of carbon and boron

G. S. Sandhu, M. L. Swanson, and W. K. Chu

Appl. Phys. Lett. 55, 1397 (1989); http://dx.doi.org/10.1063/1.101605 (3 pages) | Cited 21 times

Full Text: | Download PDF

Show Abstract
We have implanted boron ions into insulating natural diamonds which were predamaged by carbon ion implantation in order to enhance the doping efficiency. All implantations were performed at liquid‐nitrogen temperature. Subsequent rapid thermal annealing at 1100 °C produced strong new optical absorption bands near 1060 cm−1, and a sharp absorption at 2962 cm−1 (0.37 eV) which is close to that attributed to substitutional boron in type IIB diamond. We obtained resistivity of the order of 100 Ω cm and carrier activation energy of 0.1 eV for a sample implanted with 2×1015 C and 3×1014 B per cm2, indicating a high substitutional fraction of boron atoms.
Show PACS
61.72.up Other materials
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
78.30.Hv Other nonmetallic inorganics
72.80.-r Conductivity of specific materials

In situ observation by ultrahigh vacuum reflection electron microscopy of terrace formation processes on (100) silicon surfaces during annealing

N. Inoue and K. Yagi

Appl. Phys. Lett. 55, 1400 (1989); http://dx.doi.org/10.1063/1.101606 (3 pages) | Cited 2 times

Full Text: | Download PDF

Show Abstract
Formation processes of terraces on (100) silicon surfaces during annealing at 1000 °C were observed in situ by ultrahigh vacuum reflection electron microscopy. Terraces were formed on staircases made up of monoatomic steps, preferentially at the sites where stairs were larger than average. The sites are formed by surface undulation. It was found that the terrace grew, or extended, in both up‐step and down‐step directions almost at equal rates. The terrace thus grew not by sublimation, but by adhesion and removal of atoms at respective terrace edges. Thus, the interlayer migration of adatoms plays an important role in the terrace growth.
Show PACS
68.35.B- Structure of clean surfaces (and surface reconstruction)
81.65.-b Surface treatments
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination
07.78.+s Electron, positron, and ion microscopes; electron diffractometers

Electronic states in lateral structures on modulation‐doped heterointerfaces

Y. Tokura, K. Tsubaki, and N. Susa

Appl. Phys. Lett. 55, 1403 (1989); http://dx.doi.org/10.1063/1.101607 (3 pages) | Cited 7 times

Full Text: | Download PDF

Show Abstract
The electronic states in an AlGaAs‐GaAs modulation‐doped heterointerface with a lateral structure of order 10 nm are analyzed self‐consistently. The structure is realized by using a fractional layer superlattice. Resonant gaps appear in the electron state band diagram because the potential cannot be expressed as a sum of the functions of two directions. The electron channel location strongly depends on which subband the electron belongs to.
Show PACS
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Luminescence of the DX center in AlGaAs

S. Alaya, H. Maaref, and J. C. Bourgoin

Appl. Phys. Lett. 55, 1406 (1989); http://dx.doi.org/10.1063/1.101608 (3 pages) | Cited 17 times

Full Text: | Download PDF

Show Abstract
Low‐temperature photoluminescence of the DX center in the near band edge and in the near‐infrared region is interpreted within the small lattice relaxation model. The 1.5 μm luminescence band is attributed to an internal transition between the excited DX state and its ground‐state level.
Show PACS
78.55.Cr III-V semiconductors
71.55.Eq III-V semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors
61.72.J- Point defects and defect clusters

Pressure dependence of DX center mobility in highly doped GaAs

E. P. O’Reilly

Appl. Phys. Lett. 55, 1409 (1989); http://dx.doi.org/10.1063/1.101609 (3 pages) | Cited 47 times

Full Text: | Download PDF

Show Abstract
The electron mobility of heavily n‐doped GaAs increases rapidly with applied hydrostatic pressure, as carriers are trapped at DX centers. This has been taken as evidence against the negative charge state model of the DX center (2d++2e−→d++DX−). However, here we use a modified Born approximation to analyze the pressure dependence of the mobility. It is energetically very favorable in highly doped samples for DX− centers to be formed close to d+ centers and we find that the experimental data are in fact fully consistent with the negative charge state model when such correlations are taken into account.
Show PACS
81.40.Rs Electrical and magnetic properties related to treatment conditions
71.55.Eq III-V semiconductors
72.20.Dp General theory, scattering mechanisms
72.80.Ey III-V and II-VI semiconductors

Lateral refractive index step in GaAs/AlGaAs multiple quantum well waveguides fabricated by impurity‐induced disordering

T. Wolf, C.‐L. Shieh, R. Engelmann, K. Alavi, and J. Mantz

Appl. Phys. Lett. 55, 1412 (1989); http://dx.doi.org/10.1063/1.101610 (3 pages) | Cited 33 times

Full Text: | Download PDF

Show Abstract
The lateral refractive index step Δn in GaAs/AlGaAs multiple quantum well waveguides fabricated by impurity‐induced disordering is determined. Δn is found to depend on polarization and wavelength, increasing towards the active‐layer band gap. The lateral index step can be as large as 4×10−2 for a Zn disordered waveguide device at 875 nm. A strong birefringence of the waveguiding characteristics is observed leading to an antiguiding behavior of TM‐polarized light for wavelengths sufficiently below the band gap.
Show PACS
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
85.60.-q Optoelectronic devices
42.79.Gn Optical waveguides and couplers

Extremely low resistivity erbium ohmic contacts to n‐type silicon

P. L. Janega, J. McCaffrey, and D. Landheer

Appl. Phys. Lett. 55, 1415 (1989); http://dx.doi.org/10.1063/1.101611 (3 pages) | Cited 25 times

Full Text: | Download PDF

Show Abstract
Employing structures consisting of Pt, Si, and Er layers on Si, contacts to nSi with resistivities as low as 3.7×10−8 Ω cm2 were obtained and a low‐leakage high‐breakdown voltage Schottky diode on pSi was realized. Measured contact resistivities are lowest among the known contacts to nSi. Extended transmission line method measurements were made to determine contact resistivities for contacts to n‐type silicon doped in the range 1018 –1020 cm−3 . The data are consistent with a barrier height of ∼0.37 eV. The metallurgy of the contacts was studied using transmission electron microscopy.
Show PACS
73.40.Cg Contact resistance, contact potential
73.30.+y Surface double layers, Schottky barriers, and work functions
85.30.Hi Surface barrier, boundary, and point contact devices
85.40.Ls Metallization, contacts, interconnects; device isolation

Soft and hard ionization thresholds in Si and GaAs

Nobuyuki Sano, Takahiro Aoki, and Akira Yoshii

Appl. Phys. Lett. 55, 1418 (1989); http://dx.doi.org/10.1063/1.101612 (3 pages) | Cited 20 times

Full Text: | Download PDF

Show Abstract
We introduce a new simple model of ionization probabilities in semiconductors, which clarifies the origin of softness and hardness of the ionization thresholds observed in Si and GaAs, respectively. It is shown that the ionization probability is, in principle, hard in both materials in the sense that the electrons rapidly ionize when they approach the threshold energies, and that the softness is mainly introduced from the fact that the threshold energies strongly depend upon the wave vectors of the initiating electrons.
Show PACS
79.20.Hx Electron impact: secondary emission
72.20.Ht High-field and nonlinear effects
72.20.Dp General theory, scattering mechanisms

High‐gain lateral hot‐electron device

A. Palevski, C. P. Umbach, and M. Heiblum

Appl. Phys. Lett. 55, 1421 (1989); http://dx.doi.org/10.1063/1.101613 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
A lateral hot‐electron device has been fabricated in a plane of a two‐dimensional electron gas. The transfer ratio of the device, α, was studied for different geometrical configurations of the emitter barrier. The maximum transfer ratio was greater than 0.99 at 4.2 K, corresponding to a current gain greater than 100 for devices with base widths of 220 nm. An emission of a single longitudinal optical phonon, by the injected electrons, has been observed.
Show PACS
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Temperature dependence of acceptor‐hole recombination in germanium

L. S. Darken and G. E. Jellison

Appl. Phys. Lett. 55, 1424 (1989); http://dx.doi.org/10.1063/1.102281 (3 pages) | Cited 6 times

Full Text: | Download PDF

Show Abstract
The recombination kinetics of several centers (Zn−, Cu−, B−, CuH−2, CuH−x, Zn=, Cu=, and CuH=x ) in high‐purity Ge have been measured as a function of temperature from 8 to 160 K by transient capacitance techniques and are significantly faster than expected from cascade theory. The cascade theory also gives the wrong temperature dependence, and the wrong z dependence. Instead, the data are generally fit by the expression Nv/4pτc≂kT/h (p and τc are, respectively, the free‐hole concentration in the sample and the experimental mean capture time for a center).
Show PACS
71.55.Ht Other nonmetals
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
85.30.Fg Bulk semiconductor and conductivity oscillation devices (including Hall effect devices, space-charge-limited devices, and Gunn effect devices)
29.40.Wk Solid-state detectors

Determination of nonradiative surface layer thickness in quantum dots etched from single quantum well GaAs/AlGaAs

E. M. Clausen, H. G. Craighead, J. M. Worlock, J. P. Harbison, L. M. Schiavone, L. Florez, and B. Van der Gaag

Appl. Phys. Lett. 55, 1427 (1989); http://dx.doi.org/10.1063/1.101614 (3 pages) | Cited 47 times

Full Text: | Download PDF

Show Abstract
Low‐temperature cathodoluminescence spectroscopy was used to investigate the luminescence efficiency of reactive ion etched quantum dots, varying in diameter from 200 μm down to 60 nm. The luminescence efficiency was found to be degraded both with decreasing nanostructure size and with increasing etch depth. A solution to the standard model for diffusion and recombination was applied to the data to determine the surface recombination velocity S. We found that for dots smaller than the diffusion length, the standard diffusion model becomes insensitive to the value of S and fails to predict that there is a size of dot in which the luminescence is completely extinguished. To understand qualitatively the luminescence degradation in etched nanostructures we describe a damage layer thickness ξ. The value of ξ determines the smallest quantum structure that will still emit light. We show that ξ increases with increasing etch depth and is therefore dependent on etching conditions.
Show PACS
78.60.Hk Cathodoluminescence, ionoluminescence
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
81.65.-b Surface treatments
73.50.Gr Charge carriers: generation, recombination, lifetime, trapping, mean free paths

High quality electron system with variable electron layer thickness in a parabolic quantum well

T. Sajoto, J. Jo, M. Santos, and M. Shayegan

Appl. Phys. Lett. 55, 1430 (1989); http://dx.doi.org/10.1063/1.101577 (3 pages) | Cited 29 times

Full Text: | Download PDF

Show Abstract
We report the realization of a high quality electron system with variable areal density (ns ) in a selectively doped, parabolic Ax Ga1−x As well. For each ns, quantum oscillations in the magnetoresistance are analyzed to obtain the electron densities of the electric subbands. These densities are in good agreement with the predictions of self‐consistent calculations of the subband structure. The data reveal that with increasing ns , the width of the electron system increases so that the effective three‐dimensional density and the Fermi energy remain essentially constant. The dependence of the low‐temperature electron mobility on ns is also reported.
Show PACS
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
73.61.Ey III-V semiconductors
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Fabrication of quasi‐zero‐dimensional submicron dot array and capacitance spectroscopy in a GaAs/AlGaAs heterostructure

H. Fang, R. Zeller, and P. J. Stiles

Appl. Phys. Lett. 55, 1433 (1989); http://dx.doi.org/10.1063/1.101578 (3 pages) | Cited 23 times

Full Text: | Download PDF

Show Abstract
A new and very simple technique has been developed for fabricating two‐dimensional periodic submicron structures with feature size down to about 300 Å. The etching mask is made by coating the material surface with a monolayer of closely packed uniform latex particles. We have performed capacitance measurements on GaAs/AlGaAs heterostructure samples with a quasi‐zero‐dimensional dot array of 3300, 3640, and 3940 Å periodicities. A series of nearly equally spaced peaks in a curve of the derivative of capacitance with respect to gate voltage, which corresponds to the energy levels formed by the lateral electric confining potential, is observed.
Show PACS
68.35.Fx Diffusion; interface formation
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
81.65.-b Surface treatments
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

InGaAs/GaAs strained quantum wells with a 1.3 μm band edge at room temperature

P. Melman, B. Elman, C. Jagannath, Emil S. Koteles, A. Silletti, and D. Dugger

Appl. Phys. Lett. 55, 1436 (1989); http://dx.doi.org/10.1063/1.101579 (3 pages) | Cited 9 times

Full Text: | Download PDF

Show Abstract
The fabrication of long‐wavelength optoelectronic devices on GaAs substrates is an attractive method for monolithic integration of optical and electronic devices on a single chip for applications in telecommunications. In this letter we describe our studies of one such scheme using a novel structure for spatially separating a portion of the biaxial compressive stress due to lattice mismatch of the layers from the well layer, and demonstrate its feasibility. High quality pseudomorphic strained InGaAs quantum wells were grown on GaAs substrates by molecular beam epitaxy with a band edge between 1.3 and 1.4 μm at room temperature. Low‐temperature photoluminescence spectroscopy as well as polarization‐dependent absorption measurements in a waveguide geometry was used to characterize the structures.
Show PACS
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.55.Cr III-V semiconductors
85.60.-q Optoelectronic devices
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

Structure and stability of metastable α‐Sn

M. T. Asom, A. R. Kortan, L. C. Kimerling, and R. C. Farrow

Appl. Phys. Lett. 55, 1439 (1989); http://dx.doi.org/10.1063/1.101580 (3 pages) | Cited 21 times

Full Text: | Download PDF

Show Abstract
We report for the first time the growth of high quality films of metastable α‐Sn. The structural properties of the molecular beam epitaxy grown metastable α‐Sn are investigated by means of in situ reflection high‐energy electron diffraction (RHEED) analysis, scanning electron microscopy including electron channeling patterns, and high‐resolution x‐ray scattering techniques. Scanning electron microscopy reveals a growth morphology of smooth and uniform surfaces. RHEED patterns yield a highly streaked (2×1) surface reconstruction suggesting a layer‐by‐layer growth mechanism. Triple‐axis x‐ray diffractometry was employed to determine structural parameters and the strain distribution. In‐plane rocking scans of the (400) reflection indicate a half width of 3 arcsec for the heterostructure α‐Sn/InSb. Out‐of‐plane scans reveal a tetragonal distortion perpendicular to the film plane, contributing a net strain of ∼0.28%. These results are in quantitative agreement with values calculated using simple elastic theory.
Show PACS
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.-a Thin film structure and morphology
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.60.Bs Mechanical and acoustical properties

Combined effect of strained‐layer superlattice and annealing in defects reduction in GaAs grown on Si substrates

N. A. El‐Masry, J. C. L. Tarn, and S. M. Bedair

Appl. Phys. Lett. 55, 1442 (1989); http://dx.doi.org/10.1063/1.101581 (3 pages) | Cited 19 times

Full Text: | Download PDF

Show Abstract
The high defect density in GaAs grown on Si can be reduced by the combined use of the strained superlattices (InGaAs‐GaAsP) and annealing. The strained‐layer superlattice (SLS) bends the dislocations and acts as a medium for dislocations interactions, and annihilations. Highly strained SLS (∼2%) is required to bend the dislocations and keep them bent at the SLS interfaces. The SLS coupled with annealing permits a remarkable reduction of threading dislocation density. Annealing provides the energy for threading dislocations to interact with the SLSs and improves their efficiency significantly.
Show PACS
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
68.35.Dv Composition, segregation; defects and impurities
81.65.-b Surface treatments
Page 1 of 2 Pages Next Page | Jump to Page
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close