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9 Oct 1989

Volume 55, Issue 15, pp. 1489-1584

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Organic electroluminescent device having a hole conductor as an emitting layer

Chihaya Adachi, Tetsuo Tsutsui, and Shogo Saito

Appl. Phys. Lett. 55, 1489 (1989); http://dx.doi.org/10.1063/1.101586 (3 pages) | Cited 291 times

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We have succeeded in fabricating a novel thin‐film electroluminescent device with a luminescent hole transport layer as an emitter. The cell structure is composed of an indium‐tin‐oxide substrate, a luminescent hole transport layer (emitter), an electron transport layer, and a MgAg electrode. The most essential feature of our device owes for adoption of an oxadiazole derivative as an electron transport layer. The emission intensity of 1000 cd/m2 was achieved at a current of 100 mA/cm2.
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78.66.Qn Polymers; organic compounds
78.60.Fi Electroluminescence
85.60.Jb Light-emitting devices
73.50.-h Electronic transport phenomena in thin films

High‐power low‐threshold graded‐index separate confinement heterostructure AlGaAs single quantum well lasers on Si substrates

Jae‐Hoon Kim, Robert J. Lang, Gouri Radhakrishnan, Joseph Katz, Authi A. Narayanan, and Richard R. Craig

Appl. Phys. Lett. 55, 1492 (1989); http://dx.doi.org/10.1063/1.101587 (3 pages) | Cited 4 times

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A high‐power low‐threshold graded‐index separate confinement heterostructure AlGaAs single quantum well laser on Si substrates has been demonstrated for the first time by a hybrid growth of migration‐enhanced molecular beam epitaxy followed by metalorganic vapor phase epitaxy. The quantum well laser showed an output power of more than 400 mW per facet under pulsed conditions. A room‐temperature threshold current of 300 mA was obtained with a differential quantum efficiency of 40% without facet coating. The threshold current density was 550 A/cm2 for a cavity length of 500 μm. These results show the highest peak power reported to date for low‐threshold lasers on Si substrates. The full width at half maximum of the far‐field pattern parallel to the junction was 6°. Threshold current densities as low as 250 A/cm2 were obtained for lasers on GaAs substrates.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
42.60.By Design of specific laser systems

Efficient fiber coupling to low‐loss diluted multiple quantum well optical waveguides

R. J. Deri, N. Yasuoka, M. Makiuchi, A. Kuramata, and O. Wada

Appl. Phys. Lett. 55, 1495 (1989); http://dx.doi.org/10.1063/1.101588 (3 pages) | Cited 8 times

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We demonstrate the use of diluted multiple quantum wells to achieve low‐loss fiber‐matched optical waveguides. A fiber mismatch loss of 0.2 dB/interface and propagation loss of 0.4 dB/cm are achieved at 1.54 μm wavelength using InGaAsP/InP materials.
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42.79.Gn Optical waveguides and couplers
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
42.82.-m Integrated optics
42.81.Qb Fiber waveguides, couplers, and arrays

200 MW S‐band Dielectric Cherenkov Maser oscillator

William Main, Randall Cherry, and Eusebio Garate

Appl. Phys. Lett. 55, 1498 (1989); http://dx.doi.org/10.1063/1.101589 (3 pages) | Cited 18 times

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General Dynamics is investigating the Dielectric Cherenkov Maser as a rugged, compact, and tunable high‐power microwave source. This letter reports the test results of an S‐band device operating at 3.8 GHz. The device consisted of a dielectric (ϵ=10) lined cylindrical waveguide with waveguide radius 3.63 cm, and liner thickness 0.60 cm; and an annular electron beam with radius 2.54 cm. The beam parameters were 700 keV, 12 kA, 100 ns and yielded an rf pulse of 200 MW for 20 ns. A 15 kG axial guide field was used. The measured results agree with the numerical solution of the dispersion relation which includes the effect of the beam and liner.
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84.40.Ik Masers; gyrotrons (cyclotron-resonance masers)
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
41.75.Ht Relativistic electron and positron beams
41.60.-m Radiation by moving charges

Operating characteristics of InGaAs/AlGaAs strained single quantum well lasers

D. P. Bour, Ramon U. Martinelli, D. B. Gilbert, L. Elbaum, and M. G. Harvey

Appl. Phys. Lett. 55, 1501 (1989); http://dx.doi.org/10.1063/1.101590 (3 pages) | Cited 15 times

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The performance of a series of InxGa1−xAs/AlGaAs (x=0.20 and 0.25) strained single quantum well (SSQW) lasers with lasing wavelengths in the range 930≤λ≤1000 nm is discussed. Less‐strained devices, with x=0.20 and QW thickness 7 nm (λ∼930 nm), perform comparably with GaAs QW lasers. Longer wavelength (λ>950 nm), more highly strained lasers exhibit poorer performance. Our results suggest that interfacial recombination limits the performance at the longer wavelength structures.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Px Semiconductor lasers; laser diodes
85.60.Jb Light-emitting devices
68.35.Dv Composition, segregation; defects and impurities

Quantum‐confined Stark effect in very small semiconductor crystallites

F. Hache, D. Ricard, and C. Flytzanis

Appl. Phys. Lett. 55, 1504 (1989); http://dx.doi.org/10.1063/1.102257 (3 pages) | Cited 58 times

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Experimental study of the change δα in the absorption spectrum due to a static electric field is reported for very small CdSSe crystallites. We observe oscillations of δα as a function of the wavelength, which are well explained as a Stark effect for the quantized electronic levels. A perturbation calculation is performed, which gives good theoretical fits of the experimental curves.
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71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
78.20.Jq Electro-optical effects
71.20.Nr Semiconductor compounds
71.20.Ps Other inorganic compounds

Concept, design, and use of the photoacoustic heat pipe cell

Henk Jalink and Dane Bicanic

Appl. Phys. Lett. 55, 1507 (1989); http://dx.doi.org/10.1063/1.102302 (3 pages) | Cited 8 times

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A resonant photoacoustic cell suitable for studies of liquid samples having low vapor pressures has been developed and tested. The cell, the working of which is based on that of the heat pipe, is of a simple, compact design; its operational temperature range is limited only by the choice of working fluid and the material used to construct the cell. The feasibility of this novel‐type cell has been demonstrated by obtaining the absorption spectrum of geraniol C10H18O at 403 K in the spectral region covered by the CO2 laser emission.
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82.80.Kq Energy-conversion spectro-analytical methods (e.g., photoacoustic, photothermal, and optogalvanic spectroscopic methods)
07.57.Ty Infrared spectrometers, auxiliary equipment, and techniques
78.30.C- Liquids

Amorphous phase formation by solid‐state reaction between polycrystalline Co thin films and single‐crystal GaAs

F. Y. Shiau and Y. A. Chang

Appl. Phys. Lett. 55, 1510 (1989); http://dx.doi.org/10.1063/1.101591 (3 pages) | Cited 14 times

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The formation of an amorphous phase between Co thin films and GaAs substrates by solid‐state reaction has been investigated by transmission electron microscopy and Auger electron spectroscopy. The amorphization is ascribed to the fast diffusion of Co in GaAs. The amorphous layer, after a 300 °C, 4.5 h annealing, is measured to be ∼40 nm in thickness and has a broad composition range. Prolonged annealing at 300 °C or heat treatment at 340 °C results in the crystallization of the amorphous phase. This crystallization is found to initiate from the Co/amorphous phase interface and leads to the formation of a metastable, supersaturated phase. Finally, the equilibrium condition is reached by the decomposition of this intermediate phase into CoGa and CoAs.
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68.55.-a Thin film structure and morphology
61.43.Fs Glasses
61.43.-j Disordered solids
68.35.Rh Phase transitions and critical phenomena
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties

Misfit accommodation in a lattice‐mismatched HgTe‐CdTe superlattice/HgCdTe heterostructure grown by molecular beam epitaxy

T. R. Hanlon, R. J. Koestner, and H.‐Y. Liu

Appl. Phys. Lett. 55, 1513 (1989); http://dx.doi.org/10.1063/1.101592 (3 pages) | Cited 4 times

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We report an x‐ray diffraction study of a HgTe‐CdTe superlattice (SL)/HgCdTe heterostructure grown by molecular beam epitaxy (MBE). The diffraction results are used to place an upper bound on the misfit accommodation at the lattice‐mismatched SL/HgCdTe interface. The misfit accommodation at the heterointerface is at least an order of magnitude less than that predicted by equilibrium misfit theory. It appears that the low substrate temperature used in MBE HgCdTe growth imposes a kinetic barrier to misfit accommodation.
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68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
68.35.Dv Composition, segregation; defects and impurities

Homogeneous and interfacial heat releases in amorphous silicon

E. P. Donovan, F. Spaepen, J. M. Poate, and D. C. Jacobson

Appl. Phys. Lett. 55, 1516 (1989); http://dx.doi.org/10.1063/1.101593 (3 pages) | Cited 66 times

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Amorphous Si layers prepared by MeV Si implantation of (100) wafers have been studied by scanning and isothermal calorimetry. A homogeneous heat release of 5.1±1.2 kJ/mole and an interfacial heat release, due to crystallization, of 13.4±0.7 kJ/mole have been measured. Isothermal measurements unambiguously demonstrate the occurrence of the homogeneous release. The heat released isothermally at each temperature is between 6% and 8.5% of the total homogeneous release, and the time constants are only very weakly temperature dependent.
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68.55.-a Thin film structure and morphology
64.70.D- Solid-liquid transitions
65.20.-w Thermal properties of liquids
65.40.gd Entropy
61.43.Fs Glasses
61.43.-j Disordered solids

Microcrystallite size dependence of absorption and photoluminescence spectra in CdSxSe1−x‐doped glass

H. Shinojima, J. Yumoto, N. Uesugi, S. Omi, and Y. Asahara

Appl. Phys. Lett. 55, 1519 (1989); http://dx.doi.org/10.1063/1.102251 (3 pages) | Cited 29 times

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Absorption and photoluminescence peak shifts due to the quantum size effect are observed in CdSxSe1−x microcrystallites with average radii ranging from several angstroms to 100 Å. For microcrystallite radii between 15 and 100 Å, the observed peak shifts can be described using an effective mass of 0.46m0 (m0 is the free‐electron mass), which is 4.6 times as large as the reduced mass in CdS0.12Se0.88. When the radius is reduced to less than 15 Å, the effective mass, which is estimated from the experimental results, increases. The discrepancy between the theoretical prediction and the obtained results is discussed.
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73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Et II-VI semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
78.30.-j Infrared and Raman spectra
78.40.Fy Semiconductors

Chemical vapor deposition of single‐crystal films of cubic SiC on patterned Si substrates

Mitsuhiro Shigeta, Yoshihisa Fujii, Katsuki Furukawa, Akira Suzuki, and Shigeo Nakajima

Appl. Phys. Lett. 55, 1522 (1989); http://dx.doi.org/10.1063/1.102252 (3 pages) | Cited 6 times

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Stacking faults of cubic SiC films grown on Si (100) were investigated by the electrolytic etching. We find an exponential reduction of the defect density with an increase of film thickness and the anisotropy in the density for the films on off‐axis Si (100) substrates. The defect reduction along the offset direction 〈011〉 is explained from the atomic step effect limiting the length of stacking faults to smaller than the equilibrium value. In addition, the defects are eliminated by controlling the film thickness and the size of the growth area using patterned substrates. Since the defects in SiC are metastable, the film thickness required for defect‐free crystal is larger than √2× the lateral dimension.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.65.-b Surface treatments
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Photoluminescence studies of Si (100) doped with low‐energy (≤1000 eV) As+ ions during molecular beam epitaxy

J.‐P. Noël, J. E. Greene, N. L. Rowell, S. Kechang, and D. C. Houghton

Appl. Phys. Lett. 55, 1525 (1989); http://dx.doi.org/10.1063/1.102303 (3 pages) | Cited 40 times

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Low‐temperature (4.2K) photoluminescence (PL) has been used to characterize Si(100) films doped with EAs =200, 500, and 1000 eV 75 As+ ions during growth by molecular beam epitaxy on n+ Sb‐doped substrates at temperatures Ts between 500 and 800 °C. Sharp no‐phonon, transverse‐optical, and transverse‐acoustic phonon‐assisted bound‐exciton (BE) Peaks associated with As dopant species, together with broader, weaker, Sb‐related BE peaks, were the dominant PL features obtained from 5‐μm‐thick layers. No peaks ascribable to residual ion‐induced damage were observed in films grown at 650 °C with EAs =200 eV or Ts =800 °C with EAs =200, 500, and 1000 eV. However, reducing the film growth temperature to 500 °C with Eas =200 eV gave rise to a strong ion‐damage PL peak at 1039.7 meV. Furthermore, both undoped and As ion‐doped films grown at 500 °C exhibited a gradual increase in the PL background below 890 meV which we believe was due to quenched‐in point defects. Complementary deep level transient spectroscopy measurements showed electron trap states (concentrations≂1014 cm−3) at energies of 0.06 an d‐0.52 eV below the conduction‐band edge for films grown at 500 °C with EAs =200 eV. No traps were observed in the ion‐doped Ts=650 and 800 °C samples.
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78.55.Hx Other solid inorganic materials
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
61.80.Jh Ion radiation effects
73.20.Hb Impurity and defect levels; energy states of adsorbed species

Photoluminescence and space‐charge distribution in a double‐barrier diode under operation

N. Vodjdani, F. Chevoir, D. Thomas, D. Cote, P. Bois, E. Costard, and S. Delaitre

Appl. Phys. Lett. 55, 1528 (1989); http://dx.doi.org/10.1063/1.102253 (3 pages) | Cited 21 times

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The low‐temperature photoluminescence of a double‐barrier diode under operation is studied. Its observation with exciting light above (as well as below) the quantum well absorption edge indicates that the tunneling of holes plays an important role. A new crossed transition identified to occur in the collector spacer layer shows a strong Stark shift with applied bias giving information on the potential distribution in the diode.
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78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
78.55.Cr III-V semiconductors
85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)

Antiphase domain boundary formation in single‐crystal chalcopyrite‐structure ZnGeAs2 grown on GaAs

G. S. Solomon, J. B. Posthill, and M. L. Timmons

Appl. Phys. Lett. 55, 1531 (1989); http://dx.doi.org/10.1063/1.102304 (3 pages) | Cited 2 times

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Using transmission electron microscopy we have observed antiphase domain boundaries in single‐crystal (001) ZnGeAs2 grown on vicinal (100) GaAs by organometallic vapor phase epitaxy. These antiphase domains boundaries pertain only to the cation sublattice of the chalcopyrite‐structure ZnGeAs2 and are initiated at the heteroepitaxial interface because there exists a level of ordering on the cation sublattice in the ZnGeAs2 epitaxial film that is absent in the GaAs substrate. There are two possible types of displacement vectors characterizing these antiphase domain boundaries, and a zinc‐blende‐structure substrate orientation to eliminate the boundaries is suggested.
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61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.15.Kk Vapor phase epitaxy; growth from vapor phase
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.35.Dv Composition, segregation; defects and impurities

Injection in a continuum miniband: Observation of negative transconductance in a superlattice‐base transistor

Fabio Beltram, Federico Capasso, Albert L. Hutchinson, and Roger J. Malik

Appl. Phys. Lett. 55, 1534 (1989); http://dx.doi.org/10.1063/1.102237 (3 pages) | Cited 14 times

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We report the first observation of electron injection in a continuum miniband and of the associated negative transconductance in a semiconductor heterostructure. In a superlattice‐base unipolar transistor, electrons are injected into a miniband lying in the classical continuum of energy. They are collected by a compositionally graded collector barrier. Negative transconductance is observed due to suppression of miniband conduction in the base.
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85.30.De Semiconductor-device characterization, design, and modeling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Si‐Si1−xGex n‐type resonant tunnel structures

Y. Rajakarunanayake and T. C. McGill

Appl. Phys. Lett. 55, 1537 (1989); http://dx.doi.org/10.1063/1.102238 (3 pages) | Cited 1 time

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We report the first study of n‐type Si‐Si1−xGex resonant tunnel structures. Strain effects in these structures induce splittings of the sixfold conduction bands into twofold and fourfold states, and change the band‐edge profiles considerably. We demonstrate that resonant tunneling due to twofold, fourfold, or twofold and fourfold electrons can be selectively achieved by a proper choice of the layer thicknesses and alloy concentrations in the barrier layers. The possibilities for using these phenomena for making electron filters and making accurate determinations of the band offsets are discussed.
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85.30.Mn Junction breakdown and tunneling devices (including resonance tunneling devices)
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.40.Gk Tunneling
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Porous silicon microstructure as studied by transmission electron microscopy

S.‐F. Chuang, S. D. Collins, and R. L. Smith

Appl. Phys. Lett. 55, 1540 (1989); http://dx.doi.org/10.1063/1.102239 (3 pages) | Cited 30 times

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Cross‐sectional and plan‐view transmission electron micrograph analysis of the structure of porous silicon reveals that the pore walls are also porous, yielding a large distribution of pore sizes for a given porous silicon sample. This infrastructure appears to be a universal morphological feature of porous silicon, independent of formation conditions and doping. It is proposed that the observed microstructure explains the recently reported results of adsorption isotherm experiments.
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81.05.Rm Porous materials; granular materials
81.40.-z Treatment of materials and its effects on microstructure, nanostructure, and properties
07.79.Cz Scanning tunneling microscopes
61.05.-a Techniques for structure determination

Thermal stability of the Cu/Pd/Si metallurgy

Chin‐An Chang

Appl. Phys. Lett. 55, 1543 (1989); http://dx.doi.org/10.1063/1.102305 (3 pages) | Cited 15 times

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The reaction between Cu and Pd/Si is studied using Cu/Pd/Si structures between 200 and 600 °C. The structural analyses show the reaction between Cu and Pd/Si between 200 and 300 °C, with both Pd and Si diffusing into Cu, and Cu accumulating inside the Si region under the Pd2 Si layer formed. An extensive reaction between Cu and Pd2 Si is observed at 400 °C, forming Cu silicides and Cu3 Pd. The instability of the Cu/Pd2 Si metallurgy is comparable to those of Al/Pd2 Si and Cu/PtSi. In this regard, the difference in stability between the Cu/Pd/Si and Cu/Pt/Si structures is much smaller than that between the Al/Pd/Si and Al/Pt/Si ones. For the latter structures, a difference of about 100 °C is observed, with or without common barrier layers, with Al/Pt/Si being the more stable one. The ready formation of both Cu silicides and Cu3 Pd contributes to the instability of the Cu/Pd/Si structure. The Cu silicide reaction is also responsible for the low thermal stability of the Cu/Pt/Si structures.
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66.30.Ny Chemical interdiffusion; diffusion barriers
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
73.30.+y Surface double layers, Schottky barriers, and work functions
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Zinc delta doping of GaAs by organometallic vapor phase epitaxy

W. S. Hobson, S. J. Pearton, E. F. Schubert, and G. Cabaniss

Appl. Phys. Lett. 55, 1546 (1989); http://dx.doi.org/10.1063/1.102240 (3 pages) | Cited 10 times

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Zinc delta‐doped layers have been grown by atmospheric pressure organometallic vapor phase epitaxy. Secondary‐ion mass spectroscopy and electrochemical capacitance‐voltage profiling were used to measure the spatial distribution of the Zn for both as‐grown and annealed samples. The narrowest atomic profiles had full width at half maxima of 70 Å for peak Zn concentrations of ≤3×1018 cm−3. The as‐grown width of these profiles is attributed to a combination of dopant memory effect and growth‐related diffusion during the actual formation of the delta‐doped layer. An effective diffusion coefficient D of ≤7×10−17 cm2/s is estimated for a growth temperature of 625 °C. Rapid thermal annealing at 900 °C for 5 s of several samples grown under various conditions led to calculated values of D in the range 0.5–1.0×10−12 cm2/s.
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68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.15.Kk Vapor phase epitaxy; growth from vapor phase
66.30.J- Diffusion of impurities
73.61.Ey III-V semiconductors

Kinetics aspects of TiSi2 deposition without silicon consumption

D. Bensahel, J. L. Regolini, and J. Mercier

Appl. Phys. Lett. 55, 1549 (1989); http://dx.doi.org/10.1063/1.102306 (3 pages) | Cited 3 times

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Selectively deposited layers of TiSi2 have been obtained without Si substrate consumption using the TiCl4/SiH4 system diluted in H2 at 800 °C. For a given set of parameters, we show that TiSi2 formation uses Si coming from the substrate or from the gas phase, the principal parameters being the TiCl4/SiH4 ratio, the carrier gas, and gas mass transfer as the limiting mechanism of the reactions.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.15.-z Methods of deposition of films and coatings; film growth and epitaxy
82.65.+r Surface and interface chemistry; heterogeneous catalysis at surfaces

Heteroepitaxial In0.1Ga0.9As metal‐semiconductor field‐effect transistors fabricated on GaAs and Si substrates

G. W. Wang, C. Ito, M. Feng, R. Kaliski, D. McIntyre, C. Lau, and V. K. Eu

Appl. Phys. Lett. 55, 1552 (1989); http://dx.doi.org/10.1063/1.102241 (3 pages) | Cited 1 time

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We present a comparison of device characteristics for In0.1 Ga0.9 As metal‐semiconductor field‐effect transistors (MESFETs) fabricated on GaAs and silicon substrates. The In0.1Ga0.9As layers are heteroepitaxially grown on GaAs and silicon substrates by metalorganic chemical vapor deposition. 0.5 μm gate devices fabricated on the GaAs substrate show a maximum extrinsic transconductance of 450 mS/mm and a current‐gain cutoff frequency ft of 55 GHz. Despite the large lattice mismatch, the In0.1 Ga0.9 As MESFETs fabricated on the silicon substrate show a comparable ft of 52 GHz with a lower gain.
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85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
81.15.Kk Vapor phase epitaxy; growth from vapor phase

Resonant tunneling through X‐valley states in GaAs/AlAs/GaAs single‐barrier heterostructures

R. Beresford, L. F. Luo, W. I. Wang, and E. E. Mendez

Appl. Phys. Lett. 55, 1555 (1989); http://dx.doi.org/10.1063/1.102242 (3 pages) | Cited 29 times

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Clear negative differential resistance has been observed in a GaAs/AlAs/GaAs single‐barrier heterostructure due to the presence of a quasi‐bound state associated with the X‐point profile. This surprising result is due to the fact that although the Γ‐point profile of this heterostructure is a simple single tunneling barrier, the X‐point profile actually constitutes a quantum well some 0.3 eV deep lying about 0.2 eV above the Γ point of GaAs. The experimental evidence is a sharp cutoff in conductance at about 0.36 V bias, characteristic of tunneling via a confined state.
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73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
73.61.Ey III-V semiconductors
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Photoluminescence and Raman studies of residual stresses in GaAs directly grown on InP

A. Freundlich, J. C. Grenet, G. Neu, G. Landa, and R. Carles

Appl. Phys. Lett. 55, 1558 (1989); http://dx.doi.org/10.1063/1.102243 (3 pages) | Cited 11 times

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We report first‐order Raman spectroscopy and low‐temperature photoluminescence (PL) studies of GaAs layers grown by metalorganic vapor phase epitaxy (MOVPE) on InP (100) substrates. From both the shift of the longitudinal‐optical phonons in the Raman spectra and the splitting and shift of band‐edge exciton lines in PL, the epilayers are found to be under (100) coplanar tensile stress, which is consistent with the difference between the thermoelastic properties of the two materials. The PL analysis shows that carbon is the main residual acceptor impurity in MOVPE‐grown GaAs/InP.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors
78.66.Hf II-VI semiconductors
68.55.-a Thin film structure and morphology
78.30.Fs III-V and II-VI semiconductors

Use of cation‐stabilized conditions to improve compatibility of CdTe and HgTe molecular beam epitaxy

José Arias and Jasprit Singh

Appl. Phys. Lett. 55, 1561 (1989); http://dx.doi.org/10.1063/1.102244 (3 pages) | Cited 9 times

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Reflection high‐energy electron diffraction (RHEED) dynamic studies are used to reveal the strong differences in growth kinetics of CdTe and HgTe grown by molecular beam epitaxy. These differences arise from the stronger CdTe bond compared to the HgTe bond. Surface migration activation barriers for Cd and Hg migration on (100) Te‐stabilized surfaces were estimated from the RHEED dynamic studies to be 0.72 and 0.45 eV, respectively. These differences result in a large disparity in the ideal growth temperature for two‐dimensional layer‐by‐layer growth of the two material systems. However, by altering the growth conditions (i.e., going from anion stabilized to cation stabilized), the disparity in temperatures is shown to vanish. Consequences for this important heterostructure system are discussed.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.35.Fx Diffusion; interface formation
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties
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